TWI430483B - 發光裝置封裝元件及其製造方法 - Google Patents

發光裝置封裝元件及其製造方法 Download PDF

Info

Publication number
TWI430483B
TWI430483B TW099123934A TW99123934A TWI430483B TW I430483 B TWI430483 B TW I430483B TW 099123934 A TW099123934 A TW 099123934A TW 99123934 A TW99123934 A TW 99123934A TW I430483 B TWI430483 B TW I430483B
Authority
TW
Taiwan
Prior art keywords
active
emitting device
wafer
light
solder
Prior art date
Application number
TW099123934A
Other languages
English (en)
Other versions
TW201131828A (en
Inventor
Chung Yu Wang
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of TW201131828A publication Critical patent/TW201131828A/zh
Application granted granted Critical
Publication of TWI430483B publication Critical patent/TWI430483B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Description

發光裝置封裝元件及其製造方法
本發明係有關於發光裝置(LED)封裝元件，且特別是有關於一種含基材通孔(though-substrate via；TSV)之LED封裝結構。
近年來，如發光二極體(light-emitting diodes；LED)、雷射二極體及紫外光光學偵測器等光學裝置已被廣泛使用。III族之氮化物，例如氮化鎵(GaN)及其相關合金，已證實適用於形成上述光學裝置。III族之氮化物具有高能帶間隙及高電子飽和速率，亦使其成為高溫與高速之功率電子裝置應用中之極佳選擇。
由於一般成長溫度下之氮的高平衡壓力，因此不容易得到氮化鎵之塊狀結晶。因此，氮化鎵膜層與各別之發光二極體通常形成於能符合氮化鎵特性之其他基材上。藍寶石(sapphire；Al2 O3 )為常用之基材材料。第1圖顯示發光裝置(LED)封裝元件之剖面圖。發光裝置2包含多層形成於藍寶石基材4上之以氮化鎵為主(GaN-based)的膜層。藍寶石基材4更裝設於導線架(lead frame)6上。電極8、10透過金線12使發光裝置2電性連接至導線架6。
然而，經觀察，藍寶石具有低的熱傳導率(thermal conductivity)。因此，由發光裝置2所產生的熱能無法有效地透過藍寶石基板4逸散。反而，熱能需要透過發 光裝置2的頂端及金線12散出。然而，既然金線12必需延伸至導線架6而長度較長，透過金線12的散熱效率亦不佳。此外，電極10佔據了晶片區域，而導致發光裝置的光輸出區域未能最佳化。
本發明一實施例係提供一種發光裝置封裝元件，包括：一發光裝置晶片，包含一第一主動連接墊及一第二主動連接墊；以及一承載晶片，以覆晶接合方式接合至此發光裝置晶片，其中此承載晶片包含：一第一主動基材通孔(through-substrate via；TSV)及一第二主動基材通孔，其各自連接至此第一及此第二主動連接墊；及一虛置基材通孔，位於此承載晶片中，且此虛置基材通孔在電流流經此發光裝置晶片時無電流流經。
本發明又一實施例更提供一種發光裝置封裝元件之製造方法，包括：提供一含有發光裝置晶片之發光裝置晶圓，其中此發光裝置晶片包含一第一主動連接墊及一第二主動連接墊；自此發光裝置晶圓分割出此發光裝置晶片；以覆晶接合方式接合此發光裝置晶片上之此第一主動連接墊及此第二主動連接墊至一承載晶片上並銲合一第一焊料凸塊及一第二焊料凸塊，其中此承載晶片包含：一第一主動基材通孔、一第二主動基材通孔及一虛置基材通孔，此第一及此第二主動基材通孔係用以電性連接此承載晶片之相反側上的元件，其中此第一主動基材通孔及此第二主動基材通孔各自電性連接至此第一焊 料凸塊及此第二焊料凸塊，其中此虛置基材通孔以一虛置焊料凸塊連接至此發光裝置晶片。
為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下：
本發明接下來將會提供許多不同的實施例以說明本發明中不同的特徵。各特定實施例中的構成及配置將會在以下作詳細說明以闡述本發明之精神，但這些實施例並非用於限定本發明。
本發明在此揭示一種新穎的發光裝置(light-emitting device；LED)封裝元件及其製造方法，並將舉例本發明實施例之製造中間過程，也將討論這些實施例之變化。在本發明各種舉例之圖示及實施例中，相似元件符號表示為相似元件。
第2圖顯示為晶圓100，其包含形成於基材20上之發光裝置22。在一實施例中，基材20由藍寶石(透明的Al2 O3 )形成，或者，亦可由其他性質與發光裝置22所使用之膜層(包含III族、V族元素或亦稱為III-V化合物半導體材料)相近的材料形成。基材20亦可為碳化矽基材、覆有碳化矽層之矽基材、矽鍺基材或其他可適用之半導體基材。
在一實施例中，未摻雜之氮化鎵(u-GaN；un-doped GaN)層24形成於基材20上，且可能與其接觸。在一實 施例中，未摻雜之氮化鎵層24實質上無氮及鎵以外的其他元素存在。發光裝置22形成於未摻雜之氮化鎵層24上，且可能與其接觸。在本實施例中，每個發光裝置22皆包含n型氮化鎵層(摻雜n型雜質之氮化鎵)26、多重量子井(multiple quantum well；MQW)28、p型氮化鎵層(摻雜p型雜質之氮化鎵)30、反射板(reflector)32及頂部電極(亦為連接墊)34。反射板32例如可由金屬形成。多重量子井28例如可由氮化銦鎵(InGaN)形成，並作為用以發光之主動層。上述膜層26、28、30、32、34之形成乃習知技術，故在此不重複贅述。在本實施例中，膜層26、28、30之形成方法包含磊晶成長。可以理解的是，發光裝置22可具有多種設計型態，第2圖僅顯示所有可得之變化例中之其中一種示範例。例如，膜層26、28及30的材料皆可不同於前述的材料，且可包含三元的(ternary)III-V化合物半導體材料，例如GaAsP、GaPN、AlInGaAs、GaAsPN、AlGaAs或其類似物。並且，n型氮化鎵層26及p型氮化鎵層30的位置可交換。
每個發光裝置22皆更包含連接墊(bond pads)38，用以連接n型氮化鎵層26。因此，連接墊34及38用於施予電壓至各別的發光裝置22，使各別的發光裝置22激發放光。在一實施例中，在發光裝置22運作(發光)時，每個發光裝置22中至少一電極34有電流流經，但亦有一或多個電極34為虛置電極，其在施予電壓時不會有電流流經。
焊料凸塊36(包含主動焊料凸塊36B及虛置焊料凸 塊36A)、40形成於發光裝置22上。焊料凸塊36及40可使用常用之焊料，例如無鉛焊料、共晶焊料(eutectic solders)或其類似物。在形成焊料凸塊36及40後，將晶圓100分割成複數個發光裝置晶片(LED chip)44，其中每個發光裝置晶片44皆含有一或多個發光裝置22。在此實施例中，每個發光裝置晶片44含有多個設置於同一基材20上的發光裝置，這些在同一發光裝置晶片中的發光裝置22稱為LED顯示單元(LED tiles)。自晶圓100分割出發光裝置晶片44後，可在發光裝置晶片44的邊緣形成切割斜角(bevel cuts)(未顯示於第2圖中，請參見第4圖)，以使邊緣與其所相對之基材20表面形成斜角(slant angle，不等於90°)。切割斜角42可減少所形成之封裝結構的應力。
參見第3圖，提供承載基材60。承載基材60包含基材62，其可為半導體基材，例如矽基材或介電基材。基材通孔(through-substrate via；TSV)64(包含虛置基材通孔64A及主動基材通孔64B)形成於基材62中，且可電性連接位於基材62相反側之元件。基材通孔64可由銅或其他金屬形成，例如鎢或前述之合金。連接墊66形成在承載基材60之一側上並與基材通孔64相連。
基材通孔64包含用於傳導電流以驅動發光裝置晶片44的基材通孔64B(稱為主動基材通孔)及視需要形成之虛置基材通孔64A。在本說明書中，既然虛置基材通孔64A的功能為散熱，則虛置基材通孔64A亦可稱為熱基材通孔(thermal TSVs)。同樣地，各別之發光裝置晶 片44發光時，有電流流經之連接墊66稱為主動連接墊66B，無電流流經之連接墊稱為虛置連接墊66A。歐姆線68可視需要埋設在承載晶圓60中。歐姆線68可相互連接各個連接墊，以使連接墊可用於調整(regualte)電流流經將欲接合在承載晶圓60上之發光裝置晶片44。或者，不形成歐姆線，以電阻極小的金屬線取代之。
承載基材60可包含切割斜角61，其為自承載晶圓60之主要表面(major surface)延伸至承載晶圓60內部的溝(grooves)。切割斜角61可具有V形之剖面形狀，矩形之剖面形狀或其類似形狀。形成切割斜角61可增加承載晶圓60的表面積，進而增進承載晶圓60之散熱能力。然而，形成切割斜角61亦可能會犧牲承載基材的機械強度，因而切割斜角61之深度需作調控，以同時滿足散熱需求及所需的機械強度。
參見第4圖，自晶圓100切割出來之多個發光裝置晶片44以覆晶接合方式接合至承載晶圓60上。在接合製程中，回銲焊料凸塊36及40以連接(join)連接墊34及38。可視需要填充底部填膠72至發光裝置晶片44及承載晶圓之間的空隙中。切割斜角42可減少填入底部填膠72之困難度。
參見第5圖，將矽膠透鏡(silicone lenses)塑模(mold)於發光裝置晶片44上。矽膠透鏡74的塑模為習知技術，故在此不重複贅述。每個矽膠透鏡74皆可覆蓋相對的發光裝置晶片44。在未填充底部填膠72之實施例中，亦可將矽膠(silicone)填充至發光裝置晶片44及承載晶圓 60之間的空隙中，發揮與底部填膠相同的功能。
接著，形成銲球76於承載晶圓60上，並與基材通孔64相連。在一實施例中，所有的基材通孔64(包含熱基材通孔64A及主動基材通孔64B上)皆有銲球76(包含主動銲球76B及虛置銲球76A)形成。在另一實施例中，僅主動基材通孔64B上有銲球76形成，但無銲球形成於熱基材通孔64A上。
在一實施例中，在設置銲球76於承載晶圓60上之後，沿著切割道63(scribe line)分割承載晶圓60，以形成如第5圖所示之結構，分離成多個封裝元件。因此，承載晶圓60分離成多個承載晶片60’，且每個承載晶片60’至少接合一LED晶片44。在另一實施例中，可先分割承載晶圓60，隨後再設置銲球76到所形成之封裝體上。在發光裝置封裝元件中，銲球76B為主動銲球。當施予電壓至發光裝置晶片44時，電流會流經主動銲球76B。另一方面，銲球76A為虛置銲球，且當施予電壓時無電流流經。
第6圖顯示透過例如連接墊80將電子元件81連接至銲球76B。無連接墊連接至虛置銲球76A。電子元件81可為印刷電路板(PCB)或其他型態之電子封裝裝置。既然無電流流經虛置銲球76A，因此亦無電流流經熱基材通孔64A及虛置焊料凸塊36A。然而，熱基材通孔64A及虛置焊料凸塊36A皆由金屬構成，因此具有絕佳的導熱能力。由發光裝置晶片44所產生的熱可輕易地由熱基材通孔64A及虛置焊料凸塊36A傳導至承載晶片60’。 因此，第6圖所示之發光裝置封裝元件之散熱能力優於傳統發光裝置封裝體。再者，傳統發光裝置封裝體發出的光可能會被封裝體的元件所阻擋，但由發光裝置晶片44所發出的光可穿過透明的基材20，且不會被任何線或連接墊所阻擋。因此，依照本發明各種實施例，可得到高的光輸出效率，且改良了傳統發光裝置封裝體熱通道內含低傳熱性材料的缺點。再者，既然銲球76B彼此之間的間距(pitch)P2大於焊料凸塊36B、40之間的間距P1(其亦為連接墊34及38之間的間距)，所形成之封裝體為扇出式封裝體(fan-out package)，而可輕易接合至其他電子元件，例如印刷電路板。
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作更動、替代與潤飾。再者，本發明之保護範圍並未侷限於說明書內所述特定實施例中的製程、機器、製造、物質組成、裝置、方法及步驟，任何所屬技術領域中具有通常知識者可從本發明揭示內容中理解現行或未來所發展出的製程、機器、製造、物質組成、裝置、方法及步驟，只要可以在此處所述實施例中實施大體相同功能或獲得大體相同結果皆可使用於本發明中。因此，本發明之保護範圍包括上述製程、機器、製造、物質組成、裝置、方法及步驟。另外，每一申請專利範圍構成個別的實施例，且本發明之保護範圍也包括各個申請專利範圍及實施例的組合。
2‧‧‧發光裝置
4‧‧‧藍寶石基材
6‧‧‧導線架
8、10‧‧‧電極
12‧‧‧金線
20‧‧‧基材
22‧‧‧發光裝置
24‧‧‧未摻雜之氮化鎵層
26‧‧‧n型氮化鎵層
28‧‧‧多重量子井
30‧‧‧p型氮化鎵層
32‧‧‧反射板
34‧‧‧頂部電極
36、40‧‧‧焊料凸塊
36A‧‧‧虛置焊料凸塊
36B‧‧‧主動焊料凸塊
38‧‧‧連接墊
42‧‧‧切割斜角
44‧‧‧發光裝置晶片
60、60’‧‧‧承載晶圓
61‧‧‧切割斜角
62‧‧‧基材
63‧‧‧切割道
64‧‧‧基材通孔
64A‧‧‧虛置/熱基材通孔
64B‧‧‧主動基材通孔
66‧‧‧連接墊
66A‧‧‧虛置連接墊
66B‧‧‧主動連接墊
68‧‧‧歐姆線
72‧‧‧底部填膠
74‧‧‧矽膠透鏡
76‧‧‧銲球
76A‧‧‧虛置銲球
76B‧‧‧主動銲球
80‧‧‧連接墊
81‧‧‧電子元件
100‧‧‧晶圓
第1圖顯示形成於藍寶石基材上之傳統發光裝置之剖面圖。
第2至6圖顯示依照本發明之一實施例之含發光裝置之封裝元件於各種中間製造階段之剖面圖。
20‧‧‧基材
36、40‧‧‧焊料凸塊
36A‧‧‧虛置焊料凸塊
36B‧‧‧主動焊料凸塊
44‧‧‧發光裝置晶片
60’‧‧‧承載晶圓
62‧‧‧基材
64‧‧‧基材通孔
64A‧‧‧虛置/熱基材通孔
64B‧‧‧主動基材通孔
66‧‧‧連接墊
66A‧‧‧虛置連接墊
68‧‧‧歐姆線
72‧‧‧底部填膠
74‧‧‧矽膠透鏡
76‧‧‧銲球
76A‧‧‧虛置銲球
76B‧‧‧主動銲球
80‧‧‧連接墊
81‧‧‧電子元件

Claims (10)

  1. 一種發光裝置封裝元件，包括：一發光裝置晶片，包含一第一主動連接墊及一第二主動連接墊；以及一承載晶片，以覆晶接合方式接合至該發光裝置晶片，其中該承載晶片包含：一第一主動基材通孔(through-substrate via；TSV)及一第二主動基材通孔，其各自連接至該第一及該第二主動連接墊；及一虛置基材通孔，位於該承載晶片中，且該虛置基材通孔在電流流經該發光裝置晶片時無電流流經。
  2. 如申請專利範圍第1項所述之發光裝置封裝元件，更包含一虛置焊料凸塊，其連接該發光裝置晶片表面上之一連接墊至該虛置基材通孔。
  3. 如申請專利範圍第1項所述之發光裝置封裝元件，其中該第一主動連接墊及該第二主動連接墊具有一第一間距，且其中該第一主動基材通孔及第二主動基材通孔具有一大於該第一間距之第二間距。
  4. 如申請專利範圍第3項所述之發光裝置封裝元件，其中該承載晶片包含背向(facing away)該發光裝置晶片之切割斜角(bevel cuts)。
  5. 如申請專利範圍第1項所述之發光裝置封裝元件，其中該發光裝置晶片包含位於邊緣之切割斜角。
  6. 如申請專利範圍第1項所述之發光裝置封裝元件，更包含：一第一銲球及一第二銲球，位於該承載晶片上，且各自電性連接至該第一及第二主動連接墊，其中該第一及該第二銲球皆與該發光裝置晶片位於該承載晶片之相反側；一虛置銲球，與該第一及該第二銲球位於該承載晶片之同側，且電性連接至該虛置基材通孔；及一電子元件，包含一連接至該第一銲球之第一電性連接(electrical connection)及一連接至該第二銲球之第二電性連接，其中該電子元件用以傳導電流流經該第一銲球及該第二銲球，但不傳導電流通過該虛置銲球。
  7. 一種發光裝置封裝元件之製造方法，包括：提供一含有發光裝置晶片之發光裝置晶圓，其中該發光裝置晶片包含一第一主動連接墊及一第二主動連接墊；自該發光裝置晶圓分割出該發光裝置晶片；以覆晶接合方式接合該發光裝置晶片上之該第一主動連接墊及該第二主動連接墊至一承載晶片上並銲合一第一焊料凸塊及一第二焊料凸塊，其中該承載晶片包含：一第一主動基材通孔、一第二主動基材通孔及一虛置基材通孔，該第一及該第二主動基材通孔係用以電性連接該承載晶片之相反側上的元件，其中該第一主動基材通孔及該第二主動基材通孔各自電性連接至該第一焊料凸塊及該第二焊料凸塊，其中該虛置基材通孔以一虛置焊料凸塊連接至該發光裝置晶片。
  8. 如申請專利範圍第7項所述之發光裝置封裝元件之製造方法，更包含形成一第一銲球及一第二銲球於該承載晶片上，且其各自電性連接至該第一主動基材通孔及第二主動基材通孔，該第一及該第二銲球與該第一及該第二焊料凸塊位於該承載晶片之相反側，且該虛置基材通孔上無任何銲球形成。
  9. 如申請專利範圍第8項所述之發光裝置封裝元件之製造方法，其中該承載晶片包含切割斜角，與該第一及該第二銲球位於該承載晶片之同側。
  10. 如申請專利範圍第7項所述之發光裝置封裝元件之製造方法，其中在切割出該發光裝置晶片後，更包括在該發光裝置晶片之邊緣形成一切割斜角。
TW099123934A 2010-03-02 2010-07-21 發光裝置封裝元件及其製造方法 TWI430483B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/715,838 US8183579B2 (en) 2010-03-02 2010-03-02 LED flip-chip package structure with dummy bumps

Publications (2)

Publication Number Publication Date
TW201131828A TW201131828A (en) 2011-09-16
TWI430483B true TWI430483B (zh) 2014-03-11

Family

ID=44530542

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099123934A TWI430483B (zh) 2010-03-02 2010-07-21 發光裝置封裝元件及其製造方法

Country Status (3)

Country Link
US (2) US8183579B2 (zh)
CN (1) CN102194971B (zh)
TW (1) TWI430483B (zh)

Families Citing this family (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8507940B2 (en) 2010-04-05 2013-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Heat dissipation by through silicon plugs
US8288849B2 (en) * 2010-05-07 2012-10-16 Texas Instruments Incorporated Method for attaching wide bus memory and serial memory to a processor within a chip scale package footprint
US8319336B2 (en) 2010-07-08 2012-11-27 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of etch microloading for through silicon vias
US8698166B2 (en) * 2010-07-16 2014-04-15 Industrial Technology Research Institute Light emitting chip package module and light emitting chip package structure and manufacturing method thereof
TWI446590B (zh) * 2010-09-30 2014-07-21 Everlight Electronics Co Ltd 發光二極體封裝結構及其製作方法
US8970043B2 (en) * 2011-02-01 2015-03-03 Maxim Integrated Products, Inc. Bonded stacked wafers and methods of electroplating bonded stacked wafers
US9666764B2 (en) * 2012-04-09 2017-05-30 Cree, Inc. Wafer level packaging of multiple light emitting diodes (LEDs) on a single carrier die
US9653643B2 (en) * 2012-04-09 2017-05-16 Cree, Inc. Wafer level packaging of light emitting diodes (LEDs)
CN102800798B (zh) * 2011-10-26 2016-06-08 清华大学 一种led封装结构及其封装方法
JP2013105973A (ja) * 2011-11-16 2013-05-30 Seiko Epson Corp 発光装置およびその製造方法、並びに、プロジェクター
US9817029B2 (en) * 2011-12-07 2017-11-14 Taiwan Semiconductor Manufacturing Co., Ltd. Test probing structure
TWI484674B (zh) * 2011-12-08 2015-05-11 Genesis Photonics Inc 電子元件
TW201324705A (zh) * 2011-12-08 2013-06-16 Genesis Photonics Inc 電子元件
US8664768B2 (en) * 2012-05-03 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Interposer having a defined through via pattern
US20130313718A1 (en) * 2012-05-24 2013-11-28 Micron Technology, Inc. Substrates Comprising Integrated Circuitry, Methods Of Processing A Substrate Comprising Integrated Circuitry, And Methods Of Back-Side Thinning A Substrate Comprising Integrated Circuitry
US8987884B2 (en) 2012-08-08 2015-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. Package assembly and methods for forming the same
KR20140130618A (ko) * 2013-05-01 2014-11-11 서울바이오시스 주식회사 솔더 페이스트를 통해 접착된 발광 다이오드를 갖는 발광 다이오드 모듈 및 발광 다이오드
US9461190B2 (en) * 2013-09-24 2016-10-04 Optiz, Inc. Low profile sensor package with cooling feature and method of making same
US9406588B2 (en) 2013-11-11 2016-08-02 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package and manufacturing method thereof
US9496297B2 (en) 2013-12-05 2016-11-15 Optiz, Inc. Sensor package with cooling feature and method of making same
CN103761929A (zh) * 2014-01-08 2014-04-30 江苏新广联绿色照明工程有限公司 硅基led显示屏单元板
JP6710641B2 (ja) * 2014-04-07 2020-06-17 ルミレッズ ホールディング ベーフェー 熱伝導体と発光デバイスとを含む照明装置
US9524917B2 (en) * 2014-04-23 2016-12-20 Optiz, Inc. Chip level heat dissipation using silicon
US20150325748A1 (en) * 2014-05-07 2015-11-12 Genesis Photonics Inc. Light emitting device
US10177032B2 (en) * 2014-06-18 2019-01-08 Taiwan Semiconductor Manufacturing Company, Ltd. Devices, packaging devices, and methods of packaging semiconductor devices
US9831214B2 (en) * 2014-06-18 2017-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device packages, packaging methods, and packaged semiconductor devices
JP6519311B2 (ja) * 2014-06-27 2019-05-29 日亜化学工業株式会社 発光装置
US9431351B2 (en) 2014-10-17 2016-08-30 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package and manufacturing method of the same
US9659863B2 (en) 2014-12-01 2017-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, multi-die packages, and methods of manufacture thereof
KR101697603B1 (ko) 2014-12-08 2017-01-19 삼성전자주식회사 반도체 패키지
TWI535346B (zh) * 2014-12-10 2016-05-21 上海兆芯集成電路有限公司 線路基板和封裝結構
US9502272B2 (en) 2014-12-29 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Devices and methods of packaging semiconductor devices
US10319701B2 (en) 2015-01-07 2019-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. Bonded 3D integrated circuit (3DIC) structure
US9601410B2 (en) 2015-01-07 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US9633958B2 (en) 2015-01-30 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding pad surface damage reduction in a formation of digital pattern generator
US10163709B2 (en) 2015-02-13 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
KR102346798B1 (ko) 2015-02-13 2022-01-05 삼성전자주식회사 반도체 발광장치
US10497660B2 (en) 2015-02-26 2019-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structures, packaged semiconductor devices, and methods of packaging semiconductor devices
US9786519B2 (en) 2015-04-13 2017-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Packaged semiconductor devices and methods of packaging semiconductor devices
US10340258B2 (en) 2015-04-30 2019-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structures, packaged semiconductor devices, and methods of packaging semiconductor devices
US9748212B2 (en) 2015-04-30 2017-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Shadow pad for post-passivation interconnect structures
US9969614B2 (en) 2015-05-29 2018-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS packages and methods of manufacture thereof
KR20160145888A (ko) * 2015-06-10 2016-12-21 삼성전자주식회사 발광소자 패키지
US9966358B2 (en) * 2015-06-17 2018-05-08 Xintec Inc. Chip package
US9520385B1 (en) 2015-06-29 2016-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and method for forming same
US10170444B2 (en) 2015-06-30 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Packages for semiconductor devices, packaged semiconductor devices, and methods of packaging semiconductor devices
US9536865B1 (en) 2015-07-23 2017-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnection joints having variable volumes in package structures and methods of formation thereof
US9570431B1 (en) 2015-07-28 2017-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor wafer for integrated packages
US9570410B1 (en) 2015-07-31 2017-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming connector pad structures, interconnect structures, and structures thereof
US9691695B2 (en) 2015-08-31 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Monolithic 3D integration inter-tier vias insertion scheme and associated layout structure
US10644229B2 (en) 2015-09-18 2020-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetoresistive random access memory cell and fabricating the same
US10269682B2 (en) 2015-10-09 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Cooling devices, packaged semiconductor devices, and methods of packaging semiconductor devices
KR102443033B1 (ko) 2015-10-12 2022-09-16 삼성전자주식회사 발광소자 패키지 및 이를 포함하는 조명 장치
US20170104135A1 (en) * 2015-10-13 2017-04-13 Sensor Electronic Technology, Inc. Light Emitting Diode Mounting Structure
US9659878B2 (en) 2015-10-20 2017-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer level shielding in multi-stacked fan out packages and methods of forming same
US10163856B2 (en) 2015-10-30 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked integrated circuit structure and method of forming
US9691723B2 (en) 2015-10-30 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Connector formation methods and packaged semiconductor devices
US9911623B2 (en) 2015-12-15 2018-03-06 Taiwan Semiconductor Manufacturing Company, Ltd. Via connection to a partially filled trench
US9589941B1 (en) 2016-01-15 2017-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-chip package system and methods of forming the same
US9773757B2 (en) 2016-01-19 2017-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Devices, packaged semiconductor devices, and semiconductor device packaging methods
US9741669B2 (en) 2016-01-26 2017-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Forming large chips through stitching
US10050018B2 (en) 2016-02-26 2018-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. 3DIC structure and methods of forming
US9842829B2 (en) 2016-04-29 2017-12-12 Taiwan Semiconductor Manufacturing Co., Ltd. Chip package structure and method for forming the same
US9859258B2 (en) 2016-05-17 2018-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US10147704B2 (en) 2016-05-17 2018-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacturing thereof
US9881903B2 (en) 2016-05-31 2018-01-30 Taiwan Semiconductor Manufacturing Company, Ltd. Package-on-package structure with epoxy flux residue
US9793246B1 (en) 2016-05-31 2017-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Pop devices and methods of forming the same
US9875982B2 (en) 2016-06-01 2018-01-23 Taiwan Semiconductor Manufacturing Company Ltd Semiconductor device and manufacturing method thereof
US10050024B2 (en) 2016-06-17 2018-08-14 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package and manufacturing method of the same
US10475769B2 (en) 2016-06-23 2019-11-12 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package and manufacturing method of the same
US10229901B2 (en) 2016-06-27 2019-03-12 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion interconnections for semiconductor devices and methods of manufacture thereof
US10115675B2 (en) 2016-06-28 2018-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Packaged semiconductor device and method of fabricating a packaged semiconductor device
US10685911B2 (en) 2016-06-30 2020-06-16 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package and manufacturing method of the same
US9941186B2 (en) 2016-06-30 2018-04-10 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor structure
US10163805B2 (en) 2016-07-01 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure and method for forming the same
US9966360B2 (en) 2016-07-05 2018-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor package and manufacturing method thereof
US9893046B2 (en) 2016-07-08 2018-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Thinning process using metal-assisted chemical etching
US9870975B1 (en) 2016-07-14 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. Chip package with thermal dissipation structure and method for forming the same
US9875972B1 (en) 2016-07-14 2018-01-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US10269732B2 (en) 2016-07-20 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Info package with integrated antennas or inductors
US10332841B2 (en) 2016-07-20 2019-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. System on integrated chips and methods of forming the same
US10157885B2 (en) 2016-07-29 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure having magnetic bonding between substrates
US10720360B2 (en) 2016-07-29 2020-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor die singulation and structures formed thereby
KR102553630B1 (ko) 2016-08-11 2023-07-10 삼성전자주식회사 발광소자 패키지 및 이를 이용한 디스플레이 장치
US10120971B2 (en) 2016-08-30 2018-11-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated fan-out package and layout method thereof
US10535632B2 (en) 2016-09-02 2020-01-14 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package structure and method of manufacturing the same
US10049981B2 (en) 2016-09-08 2018-08-14 Taiwan Semiconductor Manufacturing Company Ltd. Through via structure, semiconductor device and manufacturing method thereof
US9996725B2 (en) 2016-11-03 2018-06-12 Optiz, Inc. Under screen sensor assembly
US10170429B2 (en) 2016-11-28 2019-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming package structure including intermetallic compound
US10153320B2 (en) 2016-11-29 2018-12-11 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method of forming the same
US10153218B2 (en) 2016-11-29 2018-12-11 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
DE102017122325A1 (de) * 2017-09-26 2019-03-28 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterbauelementen
KR20190135285A (ko) * 2018-05-28 2019-12-06 주식회사 루멘스 마이크로 엘이디 모듈 및 그 제조방법
US10692799B2 (en) * 2018-06-01 2020-06-23 Innolux Corporation Semiconductor electronic device
US10879183B2 (en) 2018-06-22 2020-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US11914141B1 (en) 2018-08-23 2024-02-27 Apple Inc. Electronic device with protected light sources
JP7336451B2 (ja) * 2018-09-13 2023-08-31 ヌヴォトンテクノロジージャパン株式会社 半導体発光装置
US11172142B2 (en) 2018-09-25 2021-11-09 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor for sensing LED light with reduced flickering
US11201122B2 (en) 2018-09-27 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating semiconductor device with reduced warpage and better trench filling performance
US11508876B2 (en) * 2018-12-31 2022-11-22 Seoul Viosys Co., Ltd. Light emitting device package and display device having the same
CN110246953B (zh) * 2019-07-26 2023-08-18 厦门乾照半导体科技有限公司 一种Micro-LED芯片、显示设备及Micro-LED芯片的制作方法
US11133304B2 (en) 2019-11-27 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Packaging scheme involving metal-insulator-metal capacitor
US11527463B2 (en) * 2020-05-27 2022-12-13 Intel Corporation Hybrid ball grid array package for high speed interconnects
KR20220048695A (ko) 2020-10-13 2022-04-20 삼성전자주식회사 반도체 칩, 적층 반도체 칩 구조체, 및 이를 포함하는 반도체 패키지
US11869816B2 (en) 2021-07-26 2024-01-09 Excellence Opto. Inc. LED package with multiple test pads and parallel circuit elements
EP4125126A1 (en) 2021-07-28 2023-02-01 Excellence Opto. Inc. Led package with multiple test pads and parallel circuit elements

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040188696A1 (en) 2003-03-28 2004-09-30 Gelcore, Llc LED power package
TWI294694B (en) 2005-06-14 2008-03-11 Ind Tech Res Inst Led wafer-level chip scale packaging
JP4205135B2 (ja) * 2007-03-13 2009-01-07 シャープ株式会社 半導体発光装置、半導体発光装置用多連リードフレーム
US7842542B2 (en) * 2008-07-14 2010-11-30 Stats Chippac, Ltd. Embedded semiconductor die package and method of making the same using metal frame carrier
US8168470B2 (en) * 2008-12-08 2012-05-01 Stats Chippac, Ltd. Semiconductor device and method of forming vertical interconnect structure in substrate for IPD and baseband circuit separated by high-resistivity molding compound

Also Published As

Publication number Publication date
CN102194971A (zh) 2011-09-21
US8183579B2 (en) 2012-05-22
TW201131828A (en) 2011-09-16
US8399269B2 (en) 2013-03-19
US20110215360A1 (en) 2011-09-08
CN102194971B (zh) 2013-04-24
US20120225509A1 (en) 2012-09-06

Similar Documents

Publication Publication Date Title
TWI430483B (zh) 發光裝置封裝元件及其製造方法
US8183578B2 (en) Double flip-chip LED package components
US9362474B2 (en) Vertical LED chip package on TSV carrier
TWI459581B (zh) 用於半導體發光裝置封裝之子基板及包含子基板之半導體發光裝置封裝
US8735934B2 (en) Semiconductor light-emitting apparatus and method of fabricating the same
US8431950B2 (en) Light emitting device package structure and fabricating method thereof
TWI433358B (zh) 發光二極體晶片結構
CN101621101A (zh) 发光二极管及其制造方法
US20110147788A1 (en) Semiconductor device with a light emitting semiconductor die
US9293663B1 (en) Light-emitting unit and semiconductor light-emitting device
TWI458140B (zh) 發光裝置封裝元件
TWI395346B (zh) 發光元件的封裝結構
US9812432B2 (en) LED chip package
US20120068218A1 (en) Thermally efficient packaging for a photonic device
KR100726969B1 (ko) 서브마운트를 적용하지 않는 고방열기판을 구비한발광다이오드 패키지
GB2551154B (en) Light-emitting diode package and method of manufacture
TW202407998A (zh) 用於多晶片發光裝置的晶圓級製造