CN102194971B - 发光装置封装元件及其制造方法 - Google Patents

发光装置封装元件及其制造方法 Download PDF

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CN102194971B
CN102194971B CN2010102415379A CN201010241537A CN102194971B CN 102194971 B CN102194971 B CN 102194971B CN 2010102415379 A CN2010102415379 A CN 2010102415379A CN 201010241537 A CN201010241537 A CN 201010241537A CN 102194971 B CN102194971 B CN 102194971B
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CN102194971A (zh
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王忠裕
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Yuanxin Optoelectronics Co ltd
Epistar Corp
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Abstract

本发明提供一种发光装置(LED)封装元件及其制造方法，该元件包含一具有一第一有源连接垫及一第二有源连接垫的LED芯片；一承载芯片，以倒装芯片接合方式接合在此LED芯片上，其中此承载芯片包含一第一有源基材通孔(through-substrate via；TSV)及一第二有源基材通孔，各自连接至第一有源连接垫及第二有源连接垫，且此承载芯片还包含一虚置基材通孔于其中，此虚置基材通孔电性耦接至第一有源连接垫，但在电流流经此LED芯片时不导电。本发明可得到高的光输出效率，且改良了传统发光装置封装体热通道内含低传热性材料的缺点，并可轻易接合至其他电子元件。

Description

发光装置封装元件及其制造方法
技术领域
本发明涉及发光装置(LED)封装元件，尤其涉及一种含基材通孔(though-substrate via；TSV)的LED封装结构。
背景技术
近年来，如发光二极管(light-emitting diodes；LED)、激光二极管及紫外光光学检测器等光学装置已被广泛使用。III族的氮化物，例如氮化镓(GaN)及其相关合金，已证实适用于形成上述光学装置。III族的氮化物具有高能带间隙及高电子饱和速率，也使其成为高温与高速的功率电子装置应用中的极佳选择。
由于一般成长温度下的氮的高平衡压力，因此不容易得到氮化镓的块状结晶。因此，氮化镓膜层与各自的发光二极管通常形成于能符合氮化镓特性的其他基材上。蓝宝石(sapphire；Al2O3)为常用的基材材料。图1显示发光装置(LED)封装元件的剖面图。发光装置2包含多层形成于蓝宝石基材4上的以氮化镓为主(GaN-based)的膜层。蓝宝石基材4还装设于导线架(leadframe)6上。电极8、10通过金线12使发光装置2电性连接至导线架6。
然而，经观察，蓝宝石具有低的热传导率(thermal conductivity)。因此，由发光装置2所产生的热能无法有效地通过蓝宝石基板4逸散。反而，热能需要通过发光装置2的顶端及金线12散出。然而，既然金线12必需延伸至导线架6而长度较长，通过金线12的散热效率也不佳。此外，电极10占据了芯片区域，而导致发光装置的光输出区域未能最佳化。
发明内容
为了解决现有技术的问题，本发明一实施例提供一种发光装置封装元件，包括：一发光装置芯片，包含一第一有源连接垫及一第二有源连接垫；以及一承载芯片，以倒装芯片接合方式接合至此发光装置芯片，其中此承载芯片包含：一第一有源基材通孔(through-substrate via；TSV)及一第二有源基材通孔，其各自连接至此第一及此第二有源连接垫；及一虚置基材通孔，位于此承载芯片中，且此虚置基材通孔在电流流经此发光装置芯片时无电流流经。
本发明又一实施例还提供一种发光装置封装元件的制造方法，包括：提供一含有发光装置芯片的发光装置晶片，其中此发光装置芯片包含一第一有源连接垫及一第二有源连接垫；自此发光装置晶片分割出此发光装置芯片；以倒装芯片接合方式接合此发光装置芯片上的此第一有源连接垫及此第二有源连接垫至一承载芯片上并焊合一第一焊料凸块及一第二焊料凸块，其中此承载芯片包含：一第一有源基材通孔、一第二有源基材通孔及一虚置基材通孔，此第一及此第二有源基材通孔用以电性连接此承载芯片的相反侧上的元件，其中此第一有源基材通孔及此第二有源基材通孔各自电性连接至此第一焊料凸块及此第二焊料凸块，其中此虚置基材通孔以一虚置焊料凸块连接至此发光装置芯片。
本发明可得到高的光输出效率，且改良了传统发光装置封装体热通道内含低传热性材料的缺点，并可轻易接合至其他电子元件。
为让本发明的上述和其他目的、特征、和优点能更明显易懂，下文特举出优选实施例，并配合所附附图，作详细说明如下：
附图说明
图1显示形成于蓝宝石基材上的传统发光装置的剖面图。
图2至图6显示依照本发明的一实施例的含发光装置的封装元件于各种中间制造阶段的剖面图。
其中，附图标记说明如下：
2～发光装置4～蓝宝石基材
6～导线架8、10～电极
12～金线20～基材
22～发光装置24～未掺杂的氮化镓层
26～n型氮化镓层28～多重量子阱
30～p型氮化镓层32～反射板
34～顶部电极36、40～焊料凸块
36A～虚置焊料凸块36B～有源焊料凸块
38～连接垫42～切割斜角(bevel cuts)
44～发光装置芯片60、60’～承载晶片
61～切割斜角62～基材
63～切割道64～基材通孔
64A～有源基材通孔64B～虚置基材通孔
66～连接垫66A～虚置连接垫
66B～有源连接垫68～欧姆线
72～底部填胶74～硅胶透镜
76～焊球76A～虚置焊球
76B～有源焊球80～连接垫
81～电子元件100～晶片
具体实施方式
本发明接下来将会提供许多不同的实施例以说明本发明中不同的特征。各特定实施例中的构成及配置将会在以下作详细说明以阐述本发明的精神，但这些实施例并非用于限定本发明。
本发明在此揭示一种新颖的发光装置(light-emitting device；LED)封装元件及其制造方法，并将举例本发明实施例的制造中间过程，也将讨论这些实施例的变化。在本发明各种举例的图示及实施例中，相似元件符号表示为相似元件。
图2显示为晶片100，其包含形成于基材20上的发光装置22。在一实施例中，基材20由蓝宝石(透明的Al2O3)形成，或者，也可由其他性质与发光装置22所使用的膜层(包含III族、V族元素或也称为III-V化合物半导体材料)相近的材料形成。基材20也可为碳化硅基材、覆有碳化硅层的硅基材、硅锗基材或其他可适用的半导体基材。
在一实施例中，未掺杂的氮化镓(u-GaN；un-doped GaN)层24形成于基材20上，且可能与其接触。在一实施例中，未掺杂的氮化镓层24实质上无氮及镓以外的其他元素存在。发光装置22形成于未掺杂的氮化镓层24上，且可能与其接触。在本实施例中，每个发光装置22均包含n型氮化镓层(掺杂n型杂质的氮化镓)26、多重量子阱(multiple quantum well；MQW)28、p型氮化镓层(掺杂p型杂质的氮化镓)、反射板(reflector)30及顶部电极(也为连接垫)34。反射板32例如可由金属形成。多重量子阱28例如可由氮化铟镓(InGaN)形成，并作为用以发光的有源层。上述膜层26、28、30、32、34的形成乃公知技术，故在此不重复赘述。在本实施例中，膜层26、28、30的形成方法包含外延成长。可以理解的是，发光装置22可具有多种设计形态，图2仅显示所有可得的变化例中的其中一种示范例。例如，膜层26、28及30的材料均可不同于前述的材料，且可包含三元的(ternary)III-V化合物半导体材料，例如GaAsP、GaPN、AlInGaAs、GaAsPN、AlGaAs或其类似物。并且，n型氮化镓层26及p型氮化镓层28的位置可交换。
每个发光装置22均还包含连接垫(bond pads)38，用以连接n型氮化镓层26。因此，连接垫34及38用于施予电压至各自的发光装置22，使各自的发光装置22激发放光。在一实施例中，在发光装置22运作(发光)时，每个发光装置22中至少一电极34有电流流经，但也有一或多个电极34为虚置电极，其在施予电压时不会有电流流经。
焊料凸块36(包含有源焊料凸块36B及虚置焊料凸块36A)、40形成于发光装置22上。焊料凸块36及40可使用常用的焊料，例如无铅焊料、共晶焊料(eutectic solders)或其类似物。在形成焊料凸块36及40后，将晶片100分割成多个发光装置芯片(LED chip)44，其中每个发光装置芯片44均含有一或多个发光装置22。在此实施例中，每个发光装置芯片44含有多个设置于同一基材20上的发光装置，这些在同一发光装置芯片中的发光装置22称为LED显示单元(LED tiles)。自晶片100分割出发光装置芯片44后，可在发光装置芯片44的边缘形成切割斜角(bevel cuts)(未显示于图2中，请参见图4)，以使边缘与其所相对的基材20表面形成斜角(slant angle，不等于90°)。切割斜角42可减少所形成的封装结构的应力。
参见图3，提供承载基材60。承载基材60包含基材62，其可为半导体基材，例如硅基材或介电基材。基材通孔(through-substrate via；TSV)64(包含虚置基材通孔64A及有源基材通孔64B)形成于基材62中，且可电性连接位于基材62相反侧的元件。基材通孔64可由铜或其他金属形成，例如钨或前述的合金。连接垫66形成在承载基材60的一侧上并与基材通孔64相连。
基材通孔64包含用于传导电流以驱动发光装置芯片44基材通孔64B(称为有源基材通孔)及视需要形成的虚置基材通孔64A。在本说明书中，既然虚置基材通孔64A的功能为散热，则虚置基材通孔64A也可称为热基材通孔(thermal TSVs)。同样地，各自的发光装置芯片44发光时，有电流流经的连接垫66称为有源连接垫66B，无电流流经的连接垫称为虚置连接垫66A。欧姆线68可视需要埋设在承载晶片60中。欧姆线68可相互连接各个连接垫，以使连接垫可用于调整(regualte)电流流经将欲接合在承载晶片60上的发光装置芯片44。或者，不形成欧姆线，以电阻极小的金属线取代。
承载基材60可包含切割斜角61，其为自承载晶片60的主要表面(majorsurface)延伸至承载晶片60内部的沟(grooves)。切割斜角61可具有V形的剖面形状，矩形的剖面形状或其类似形状。形成切割斜角61可增加承载晶片60的表面积，进而增进承载晶片60的散热能力。然而，形成切割斜角61也可能会牺牲承载基材的机械强度，因而切割斜角61的深度需作调控，以同时满足散热需求及所需的机械强度。
参见图4，自晶片100切割出来的多个发光装置芯片44以倒装芯片接合方式接合至承载晶片60上。在接合工艺中，回焊焊料凸块36及40以连接(join)连接垫34及38。可视需要填充底部填胶72至发光装置芯片44及承载晶片之间的空隙中。切割斜角42可减少填入底部填胶72的困难度。
参见图5，将硅胶透镜(silicone lenses)塑模(mold)于发光装置芯片44上。硅胶透镜74的塑模为公知技术，故在此不重复赘述。每个硅胶透镜74均可覆盖相对的发光装置芯片44。在未填充底部填胶72的实施例中，也可将硅胶(silicone)填充至发光装置芯片44及承载晶片60之间的空隙中，发挥与底部填胶相同的功能。
接着，形成焊球76于承载晶片60上，并与基材通孔64相连。在一实施例中，所有的基材通孔64(包含热基材通孔64A及有源基材通孔64B上)均有焊球76(包含有源焊球76B及虚置焊球76A)形成。在另一实施例中，仅有源基材通孔64B上有焊球76形成，但无焊球形成于热基材通孔64A上。
在一实施例中，在设置焊球76于承载晶片60上之后，沿着切割道63(scribe line)分割承载晶片60，以形成如图5所示的结构，分离成多个封装元件。因此，承载晶片60分离成多个承载芯片60’，且每个承载芯片60’至少接合一LED芯片44。在另一实施例中，可先分割承载晶片60，随后再设置焊球76到所形成的封装体上。在发光装置封装元件中，焊球76B为有源焊球。当施予电压至发光装置芯片44时，电流会流经有源焊球76B。另一方面，焊球76A为虚置焊球，且当施予电压时无电流流经。
图6显示通过例如连接垫80将电子元件81连接至焊球76B。无连接垫连接至虚置焊球76A。电子元件81可为印刷电路板(PCB)或其他形态的电子封装装置。既然无电流流经虚置焊球76A，因此也无电流流经热基材通孔64A及虚置焊料凸块36A。然而，热基材通孔64A及虚置焊料凸块36A均由金属构成，因此具有绝佳的导热能力。由发光装置芯片44所产生的热可轻易地由热基材通孔64A及虚置焊料凸块36A传导至承载芯片60’。因此，图6所示的发光装置封装元件的散热能力优于传统发光装置封装体。此外，传统发光装置封装体发出的光可能会被封装体的元件所阻挡，但由发光装置芯片44所发出的光可穿过透明的基材20，且不会被任何线或连接垫所阻挡。因此，依照本发明各种实施例，可得到高的光输出效率，且改良了传统发光装置封装体热通道内含低传热性材料的缺点。此外，既然焊球76B彼此之间的间距(pitch)P2大于焊料凸块36B、40之间的间距P1(其也为连接垫34及38之间的间距)，所形成的封装体为扇出式封装体(fan-out package)，而可轻易接合至其他电子元件，例如印刷电路板。
虽然本发明已以优选实施例揭示如上，然其并非用以限定本发明，任何本领域普通技术人员，在不脱离本发明的精神和范围内，当可作更动、替代与润饰。此外，本发明的保护范围并未局限于说明书内所述特定实施例中的工艺、机器、制造、物质组成、装置、方法及步骤，任何本领域普通技术人员可从本发明揭示内容中理解现行或未来所发展出的工艺、机器、制造、物质组成、装置、方法及步骤，只要可以在此处所述实施例中实施大体相同功能或获得大体相同结果均可使用于本发明中。因此，本发明的保护范围包括上述工艺、机器、制造、物质组成、装置、方法及步骤。另外，每一权利要求构成各自的实施例，且本发明的保护范围也包括各个权利要求及实施例的组合。

Claims (10)

1.一种发光装置封装元件，包括：
一发光装置芯片，包含一第一有源连接垫及一第二有源连接垫；以及
一承载芯片，以倒装芯片接合方式接合至该发光装置芯片，其中该承载芯片包含：
一第一有源基材通孔及一第二有源基材通孔，其各自连接至该第一及该第二有源连接垫；及
一虚置基材通孔，位于该承载芯片中，且该虚置基材通孔在电流流经该发光装置芯片时无电流流经。
2.如权利要求1所述的发光装置封装元件，还包含一虚置焊料凸块，其连接该发光装置芯片表面上的一连接垫至该虚置基材通孔。
3.如权利要求1所述的发光装置封装元件，其中该第一有源连接垫及该第二有源连接垫具有一第一间距，且其中该第一有源基材通孔及第二有源基材通孔具有一大于该第一间距的第二间距。
4.如权利要求3所述的发光装置封装元件，其中该承载芯片包含背向该发光装置芯片的切割斜角。
5.如权利要求1所述的发光装置封装元件，其中该发光装置芯片包含位于边缘的切割斜角。
6.如权利要求1所述的发光装置封装元件，还包含：
一第一焊球及一第二焊球，位于该承载芯片上，且各自电性连接至该第一及第二有源连接垫，其中该第一及该第二焊球均与该发光装置芯片位于该承载芯片的相反侧；
一虚置焊球，与该第一及该第二焊球位于该承载芯片的同侧，且电性连接至该虚置基材通孔；及
一电子元件，包含一连接至该第一焊球的第一电性连接及一连接至该第二焊球的第二电性连接，其中该电子元件用以传导电流流经该第一焊球及该第二焊球，但不传导电流通过该虚置焊球。
7.一种发光装置封装元件的制造方法，包括：
提供一含有发光装置芯片的发光装置晶片，其中该发光装置芯片包含一第一有源连接垫及一第二有源连接垫；
自该发光装置晶片分割出该发光装置芯片；
以倒装芯片接合方式接合该发光装置芯片上的该第一有源连接垫及该第二有源连接垫至一承载芯片上并焊合一第一焊料凸块及一第二焊料凸块，其中该承载芯片包含：
一第一有源基材通孔、一第二有源基材通孔及一虚置基材通孔，该第一及该第二有源基材通孔用以电性连接该承载芯片的两个相对侧上的元件，
其中该第一有源基材通孔及该第二有源基材通孔各自电性连接至该第一焊料凸块及该第二焊料凸块，
其中该虚置基材通孔以一虚置焊料凸块连接至该发光装置芯片。
8.如权利要求7所述的发光装置封装元件的制造方法，还包含形成一第一焊球及一第二焊球于该承载芯片上，且其各自电性连接至该第一有源基材通孔及第二有源基材通孔，该第一及该第二焊球与该第一及该第二焊料凸块位于该承载芯片的两个相对侧，且该虚置基材通孔上无任何焊球形成。
9.如权利要求8所述的发光装置封装元件的制造方法，其中该承载芯片包含切割斜角，与该第一及该第二焊球位于该承载芯片的同侧。
10.如权利要求7所述的发光装置封装元件的制造方法，其中在切割出该发光装置芯片后，还包括在该发光装置芯片的边缘形成一切割斜角。
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