CN107910363B - 一种异质结双极晶体管基极基座使用单层光罩蚀刻方法 - Google Patents
一种异质结双极晶体管基极基座使用单层光罩蚀刻方法 Download PDFInfo
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Abstract
本发明公开了一种异质结双极晶体管基极基座使用单层光罩蚀刻方法，包括：S1：通过光刻以及通过H3PO4腐蚀进行湿法刻蚀；S2：完成SiN沉积；S3：利用BP光罩完成BP图形光刻，形成BP掩膜；S4：利用SF6和O2对SiN薄膜进行干法刻蚀；S5：用HCL溶液腐蚀SiN薄膜下方InGaP层；S6：利用H3PO4和H2O2混合溶液对InGaP层下方的GaAs层进行湿法刻蚀；S7：完成SiN薄膜下方InGaP层的湿法刻蚀；S8：利用SF6和O2对SiN薄膜进行干法刻蚀；S9：利用NMP溶液湿法去除BP光阻。本发明通过原本即有的设备增加两道侧壁蚀刻工艺，这样就可节省一道光罩流程，实现简单，成本低。
Description
技术领域
本发明涉及半导体加工领域，尤其一种异质结双极晶体管基极基座使用单层光罩蚀刻方法。
背景技术
基极基座是异质结双极晶体管器件中介于集极(Collector)与基极(Base) 两极的斜坡，其电性影响为BVceo及BVcbo。现有技术使用双层光罩(BR,BP Mask)蚀刻工艺流程，不仅步骤多用一道光罩的黄光工艺制作流程还需去除光阻及表面处理，浪费成本。而现有技术中采用单层光罩工艺中由于磷酸与双氧水混合刻蚀主GaAs时会侧蚀InGaP下方GaAs造成BP InGaP及Nitride裸露出来而导致后续蒸镀金线在Base Pedestal斜坡上断线的问题。
发明内容
本发明的目的在于克服现有技术的不足，提供一种异质结双极晶体管基极基座使用单层光罩蚀刻方法。
本发明的目的是通过以下技术方案来实现的：一种异质结双极晶体管基极基座使用单层光罩蚀刻方法，包括以下步骤：
S1：通过光刻以及通过H3PO4腐蚀进行湿法刻蚀，形成发射区台面；
S2：通过PECVD的方式完成SiN沉积；
S3：利用BP光罩完成BP图形光刻，形成BP掩膜；
S4：利用SF6和O2对SiN薄膜进行干法刻蚀；
S5：用HCL溶液腐蚀SiN薄膜下方InGaP层；
S6：利用H3PO4和H2O2混合溶液对InGaP层下方的GaAs层进行湿法刻蚀，形成BP台面结构；
S7：用HCL溶液或者磷酸溶液完成SiN薄膜下方InGaP层的湿法刻蚀，用于补侧壁InGaP层刻蚀；
S8：利用SF6和O2对SiN薄膜进行干法刻蚀，用于补侧壁SiN刻蚀；
S9：利用NMP溶液湿法去除BP光阻。
进一步地，步骤S2完成的SiN沉积厚度为400埃。
本发明的有益效果是：本发明通过单层光罩刻蚀、和InGaP及SiN Nitride的补侧壁蚀刻工艺，解决现有技术采用双层光罩工艺复杂、同时解决现有技术采用单层光罩工艺中由于磷酸与双氧水混合刻蚀主GaAs时会侧蚀InGaP下方GaAs造成BP InGaP及Nitride裸露出来而导致后续蒸镀金线在Base Pedestal斜坡上断线的问题；通过原本即有的设备增加两道侧壁蚀刻工艺，这样就可节省一道光罩流程，实现简单，成本低。
附图说明
图1为本发明方法流程图；
图2为步骤S1~S3的结果示意图；
图3为步骤S4的结果示意图；
图4为步骤S5的结果示意图；
图5为步骤S6的结果示意图；
图6为步骤S7的结果示意图；
图7为步骤S8的结果示意图；
图8为步骤S9的结果示意图；
图中，1-EM台面，2-SiN层，3-InGaP层，4-GaAs层，5-BP光阻，6-BP台面。
具体实施方式
下面结合附图进一步详细描述本发明的技术方案：如图1所示，一种异质结双极晶体管基极基座使用单层光罩蚀刻方法，包括以下步骤：
S1：通过光刻以及通过H3PO4腐蚀进行湿法刻蚀，形成发射区台面，形成GaAs材质的EM台面1如图2所示；
S2：通过PECVD的方式完成SiN沉积，厚度大概为400埃，作用为钝化层，如图2中所示的SiN层2；
S3：利用BP光罩完成BP图形光刻，形成BP掩膜，如图2所示的BP光阻5；
S4：利用SF6和O2对SiN薄膜进行干法刻蚀，如图3所示；
S5：用HCL溶液腐蚀SiN薄膜下方InGaP层3，如图4所示；
S6：利用H3PO4和H2O2混合溶液对InGaP层3下方的GaAs层4进行湿法刻蚀，形成BP台面6结构，如图5所示；其中，图5圈中的内容为InGaP层3和SiN层2的边缘缺陷（edgedefect），需要补刻蚀掉；
S7：用HCL溶液或者磷酸溶液完成SiN薄膜下方InGaP层3的湿法刻蚀，用于补侧壁InGaP层3刻蚀，如图6所示；其中，图6圈中内容为SiN层2的边缘缺陷（edge defect），需要补刻蚀掉；
S8：利用SF6和O2对SiN薄膜进行干法刻蚀，用于补侧壁SiN刻蚀，如图7所示；
S9：利用NMP溶液湿法去除BP光阻5，如图8所示。
其中，步骤S7和步骤S8为关键步骤，解决单层光罩(BP Mask)蚀刻工艺中由于磷酸与双氧水混合刻蚀主GaAs时会侧蚀InGaP下方GaAs造成BP InGaP及Nitride裸露出来,而导致后续蒸镀金线在Base Pedestal斜坡上断线。
本发明是通过实施例来描述的，但并不对本发明构成限制，参照本发明的描述，所公开的实施例的其他变化，如对于本领域的专业人士是容易想到的，这样的变化应该属于本发明权利要求限定的范围之内。
Claims (2)
1.一种异质结双极晶体管基极基座使用单层光罩蚀刻方法，其特征在于：包括以下步骤：
S1：通过光刻以及通过H3PO4腐蚀进行湿法刻蚀，形成发射区台面；
S2：通过PECVD的方式完成SiN沉积；
S3：利用BP光罩完成BP图形光刻，形成BP掩膜；
S4：利用SF6和O2对SiN薄膜进行干法刻蚀；
S5：用HCL溶液腐蚀SiN薄膜下方InGaP层；
S6：利用H3PO4和H2O2混合溶液对InGaP层下方的GaAs层进行湿法刻蚀，形成BP台面结构；
S7：用HCL溶液完成SiN薄膜下方InGaP层的湿法刻蚀，用于补侧壁InGaP层刻蚀；
S8：利用SF6和O2对SiN薄膜进行干法刻蚀，用于补侧壁SiN刻蚀；
S9：利用NMP溶液湿法去除BP光阻。
2.根据权利要求1所述的一种异质结双极晶体管基极基座使用单层光罩蚀刻方法，其特征在于：步骤S2完成的SiN沉积厚度为400埃。
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| CN1659693A (zh) * | 2002-06-10 | 2005-08-24 | 单片集成电路半导体有限公司 | 制造异质双极型晶体管的方法和异质双极型晶体管 |
| CN100383930C (zh) * | 2001-12-21 | 2008-04-23 | 飞思卡尔半导体公司 | 大部分形成在GaAs与InxGa1－xP层之间的InGaAsP上的四元界面层的腐蚀化学 |
| CN106206281A (zh) * | 2016-08-23 | 2016-12-07 | 成都海威华芯科技有限公司 | InGaP外延层的刻蚀方法 |
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| CN100383930C (zh) * | 2001-12-21 | 2008-04-23 | 飞思卡尔半导体公司 | 大部分形成在GaAs与InxGa1－xP层之间的InGaAsP上的四元界面层的腐蚀化学 |
| CN1659693A (zh) * | 2002-06-10 | 2005-08-24 | 单片集成电路半导体有限公司 | 制造异质双极型晶体管的方法和异质双极型晶体管 |
| CN106206281A (zh) * | 2016-08-23 | 2016-12-07 | 成都海威华芯科技有限公司 | InGaP外延层的刻蚀方法 |
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