CN107847928A - 用于具有遮蔽件和导电迹线的胶带夹层式流动池的方法和设备 - Google Patents

用于具有遮蔽件和导电迹线的胶带夹层式流动池的方法和设备 Download PDF

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CN107847928A
CN107847928A CN201480083656.2A CN201480083656A CN107847928A CN 107847928 A CN107847928 A CN 107847928A CN 201480083656 A CN201480083656 A CN 201480083656A CN 107847928 A CN107847928 A CN 107847928A
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substrate
adhesive tape
flow cell
tape layer
layer
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R·M·卡兰
G·卢索斯
A·T·科伯特
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Corning Inc
Picosys Inc
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Abstract

披露了一种流动池，该流动池结合有第一衬底(10)，该第一衬底的一个表面上具有金属层(12)。具有多个流动通道(15)的胶带层(14)被粘附至该第一衬底上。在一个表面上具有第二金属层(18)的第二衬底(16)与该第一衬底相反地被粘附至该胶带层上。该第一和第二金属层中的至少一者包括多个匹配切口(13，19)，用于至少部分地暴露这些流动通道。

Description

用于具有遮蔽件和导电迹线的胶带夹层式流动池的方法和 设备
背景信息
领域
[段落1]本披露的实施例总体上涉及胶带夹层式流动池领域、并且更具体地涉及用于生产具有精确的胶带几何形状的胶带夹层式流动池以及包括胶带层遮蔽和导电迹线形成的池组件的方法和结构。
背景
[段落2]微流体装置通常被称为流动池(flow cell)、提供了非常精确的手段来进行复杂的生化反应以获取重要的化学和生物学信息。除了其他优点之外，微流体系统减少了所需的样本数量以及所采用的试剂量、缩短了反应的响应时间、并且减小了处理生物危害废物的量。在20世纪90年代首次开发的初始微流体装置是使用根据微电子工业进行适配的光刻和蚀刻技术用硅和玻璃制造的。使用这种制造方法制成的许多当前的微流体装置是由塑料、硅酮或其他聚合物材料例如聚二甲基硅氧烷(PDMS)构成的。这样的装置通常是昂贵的、不灵活的、且难以构造。
[段落3]开发了使用胶带夹层来在两个衬底之间形成必要的微流体通道，从而降低制造的成本和复杂性。典型地在两个透明衬底之间使用双面胶带，所述双面胶带是由在顶部和底部上具有粘合剂层的载体材料以及覆盖这些粘合剂层的可移除的衬层组成的。用于本文描述的所有实施例的优选双面胶带包括双面硅酮胶带3M 96042或双面丙烯酸/硅酮胶带3M 9731，但是胶带的选择取决于使用的材料。
[段落4]通过切除所述双面胶带的一部分并且用材料片将其覆盖来创造微通道，对基部而言优选的是玻璃，替代地可以使用塑料作为顶部或底部覆盖物。可以通过压印、蚀刻或任何结构化方法来在塑料或其他材料中创造微通道。所述胶带上可以包含任何数量的微流体装置部件。这些微流体装置部件可能包括例如微通道、微型阀或其他气动元件、扩散室、歧管、将一层连接至另一层上的孔(过孔)、入口端口和出口端口、以及其他微流体装置部件。
[段落5]经由模制、蚀刻和结合进行的常规流动池制造是更加昂贵的(在所需的工具加工和处理两方面)并且具有较长的交付时间。在许多情况下，用于封闭所述流动池的结合方法要求高温，这阻碍了许多表面涂层的使用以及流体或活体培养物的封装。
[段落6]对于涉及胶带的现有技术，现有技术的制造方法均无法提供高精度形成流动通道的能力。此外，在粘附至衬底上时胶带中的缺陷在美学上令人不悦。在粘附至衬底上的胶带没有提供足够的密封性的应用中，没有现有技术的技术可用于经济地提供这样的密封。另外，在需要与流动通道进行电接触的许多情况下，必须采用外部引线。最后，由于在包含胶带层的晶圆上划切多个部件时的问题，带有胶带的现有技术的制造方法不能在晶圆级的处理上实现。
[段落7]因此，希望提供一种在流动通道成形方面获得高精度的设备和方法、提供用于隐藏胶带中的缺陷的视觉遮蔽、提供对衬底边缘的额外室温结合以获得流动池的更好通道尺寸性质或快速定制。此外，希望向流动池提供多条一体电引线。此外，希望在晶圆级的处理上在包含胶带层的晶圆上提供多个部件的划切。
概述
[段落8]在此披露的实施例提供了一种流动池，所述流动池具有第一衬底，所述第一衬底的一个表面上具有金属层。具有流动通道的胶带层粘附至所述第一衬底上。具有第二金属层的第二衬底在一个表面上、与所述第一衬底相反地粘附至所述胶带层上。所述第一金属层和第二金属层中的至少一者包括匹配切口，用于至少部分地暴露流动通道。
[段落9]所披露的实施例提供了一种用于制造流动池的方法，其中，提供衬底，所述衬底的一个表面上具有沉积的金属层。将胶带层粘附至所述衬底上。在胶粘之前或之后将所述金属层蚀刻或以其他方式形成为包括匹配开口以便观察流动通道。提供了匹配衬底，所述匹配衬底的一个表面上具有沉积的第二金属层。所述匹配衬底可以包括连接至流动通道上的孔。可以将所述第二金属层蚀刻或以其他方式形成为包括匹配开口以便观察流动通道。接着将所述匹配衬底与所述胶带层对齐并且结合至其上。
[段落10]已经讨论的这些特征、功能和优点可以独立地在本披露的各个实施例中实现、或者可以在还又其他实施例中进行组合，参考以下描述和附图可以看到进一步的细节。
附图说明
[段落11]图1是一个实施例的分解透视表示；
[段落12]图2是图1的实施例在组装好时的透视表示；
[段落13]图3是结合有一体导电元件的第二实施例的分解透视表示；
[段落14]图4是图3的实施例在组装好时的透视表示；
[段落15]图5是具有多个胶带元件的晶圆的透视表示，这些胶带元件具有激光切割特征；
[段落16]图6是图5的晶圆的透视表示，其中这些胶带元件通过用于划切的激光切割部分线条分开；
[段落17]图7是示例性激光切割台的透视图；
[段落18]图8是在一个衬底中结合有用于接纳胶带层的井槽的第三实施例的分解透视表示；
[段落19]图9是图8的实施例在部分组装好时的透视表示；
[段落20]图10是图8的实施例在完全组装好时的透视表示；
[段落21]图11是被适配成用于接纳如图1所示的流动池实施例的芯片包壳的透视图；
[段落22]图12是图11的芯片包壳的截面透视图；
[段落23]图13A和图13B是演示所描述的实施例的流动池的组装方法的流程图。
具体实施方式
[段落24]在此披露的实施例提供了多种用于制造胶带夹层流动池的方法和设备。现有技术中均没有使用激光器来获得高精度、没有金属层来隐藏胶带中的缺陷、没有使用可移除胶带(UV释放)、或没有将标准井槽与室温结合边缘相组合以获得流动池的更好通道尺寸特性或快速定制。使用UV可释放的或热可释放的胶带还允许容易地拆卸流动池，这对于某些应用可能是有利的。此外，向流动池添加电引线是一种挑战、并且通常用外部引线来实现。最后，由于在包含胶带层的晶圆上划切多个部件时的问题，带有胶带的现有技术的制造方法不能在晶圆级的处理上完成。
[段落25]参见附图，图1示出了流动池的第一实施例，所述流动池具有带有一个或多个入口孔/出口孔11的第一或顶部衬底10。在所述第一衬底的上或下表面上沉积金属层12(图1示出了下表面沉积)。具有一个或多个激光切割的流动通道15的胶带层14具有双面粘合剂，以便粘附至第一和第二衬底(随后进行描述)上的金属层12上。金属层12具有多个匹配切口13，这些匹配切口的大小被确定成用于暴露这些流动通道15。在所述胶带层粘附至所述金属层上的情况下，或者在所述金属层位于所述第一衬底、所述第一衬底的上表面上的实施例中，创造了在入口端口/出口端口11之间延伸的封闭的流动池。在必要时所述胶带层14可以具有可以被移除以便暴露出粘合剂的临时覆盖层。衬底10是透明的以允许通过金属层12中的切口13观察流动通道并且对用于进行处理(随后将进行描述)的预定波长的激光也可以是非常透明的，这将防止在交界处产生过多的热量。
[段落26]第二或底部衬底16具有沉积在上或下表面上的第二金属层18(图1中示出了上表面沉积)。针对所示的实施例，第二金属层结合有多个切口19，这些切口的大小被确定成用于暴露这些流动通道15，并且衬底16也是透明的以允许观察这些流动通道15。胶带层14上的双面粘合剂粘附至金属层18或衬底16上，这取决于其上沉积了所述金属层的表面。针对示例性实施例，第一衬底10和第二衬底16可以是玻璃、硅、陶瓷、塑料或类似的透明材料。这些金属层12、18针对玻璃衬底典型地是铬、但是可以利用替代的金属。胶带层14是两侧上结合了合成丙烯酸粘合剂的挠性PVC，类似于由琳得科(Lintec)或半导体设备公司(Semiconductor Equipment Corporation)供应的半导体晶圆划切胶带。所述胶带层可以替代地是由卡普顿(Kapton)聚酰亚胺或聚酯制成的遮蔽胶带或者具有硅粘合剂。
[段落27]在图2所示的组装后的条件下，流动池20允许通过第一和第二金属层观察这些流动通道。所述胶带层用双面粘合剂与两个衬底粘合。这些衬底上的金属层覆盖所述胶带层与这些衬底的粘合剂附接部，由此对粘合剂中的任何缺陷(例如通过这些透明基底可以看到的气泡、条纹或颗粒)提供美观的遮蔽。切口13和19的大小和形状可以被确定成基本上与所述胶带层中的流动通道15相同、或者可能过小而遮蔽所述流动池的一部分。这些切口可以在这些衬底组装之前在这些衬底上的金属层中形成，或者它们可以在组装之后通过将蚀刻剂流动经过所完成的流动池通道而形成。使用过小的切口、或在组装之后形成切口消除了将这些切口与流动通道精确对齐的需要。可以采用跨流动通道的侧向遮蔽，以用于过程标记或与流动池相关联的其他可视功能。
[段落28]这些金属层还可以为与流动通道相关联的过程功能提供一体的电导体，如图3和图4所示。金属层12、18可以沉积在这些衬底上并且通过蚀刻或激光处理被结构化以便提供切口13、19。在所述处理过程中，可以形成电引线22以便与流动通道15中的一个或多个相接触。针对所示的实施例，这些引线存在于沉积在第二衬底16上的第二金属层18中。如图3所示，这些引线22可以附接至接触衬垫23上从而实现外部电连接。虽然图3中示出了用于一个通道的两条简单引线，但是可以提供从所述流动池的多侧延伸的多条引线，并且在这些金属层内蚀刻出多个导体以便在多个流动通道之间或周围实现孤立的互连。在胶带层14、上部金属层12和顶部衬底10中提供了切口24以暴露这些接触衬垫23，从而实现与外部电路的电连接。对金属层位于衬底的内表面上的实施例而言，胶带层14在第一金属层12与第二金属层18之间提供了绝缘作用。
[段落29]处理所述胶带层以便创造流动通道可以通过利用由衬底材料制成的晶圆25来实现，所述晶圆可以包含多个独立的芯片，这些芯片随后被划切成多个单独的单元，如图5所示。针对所示的实施例，采用圆形晶圆，并且初始地切割粘附至所述晶圆上的胶带，从而留下多个胶带层14的图案。图5示出了，多余的胶带被去除。将晶圆25放在安装至激光结合机上的x轴和y轴运动台上的夹具28中，如在2011年08月11日提交的题为“室温玻璃与塑料以及玻璃与陶瓷/半导体的结合(ROOM TEMPERATURE GLASS-TO-PLASTIC AND GLASS-TO-CERAMIC/SEMICONDUCTOR BONDING)”的共同未决的申请序列号13/291,956中所披露的，如图7所示。夹具28可以使用真空卡盘或任何可比的装置来夹紧衬底工件。定位系统30结合有安装在基部33上的x-轴运动台32以及安装至x-轴安装台上的y-轴运动台34。针对所示的实施例，衬底对齐夹具28安装在y-轴运动台上。然而，在替代性实施例中，这些运动台可以在竖直堆叠时颠倒并且所述对齐夹具安装在所述x-轴台上。每个运动台具有驱动马达38，所述驱动马达具有相关联的螺杆驱动器40或类似的平移机构。覆盖物42遮挡这些运动台的操作元件，以确保操作者的安全。台架44为用于激光器14以及z-运动台的对准光学器件46提供支撑，所述台架携带有最终聚焦光学器件48、照相机50、以及为了检测和控制结合操作而需要的其他仪器系统。对于所示的实施例，将功率计52安装至x-轴运动台上以便定位在激光光学系下方，该功率计用于在对准夹具移动到所述激光光学器件下方以进行胶带切割之前测量和/或校准激光功率。在所示的实施例中，提供了z-轴运动台54以用于将这些光学和测量系统相对于所述对准夹具来竖直定位。计算机控制器55可编程为用于使x-轴、y-轴和z-轴运动台平移从而使激光在工件上平移。可以采用单一激光器通过利用分束器并且将光学系聚焦到多个定位系统上，来照射位于这些独立定位系统中的多个衬底工件。还能够用具有X-Y扫描仪和Z自动对焦的f-theta透镜自身或与大行程X-Y定位系统的组合来替所述换固定的透镜。
[段落30]激光被聚焦在胶带层上，并且使所述台横向移动，以切割精确的流动通道15。所述激光可以烧蚀胶带从而创造流动通道，或者激光可以切出通道的轮廓线，并且接着随后将所述轮廓线的内部分从衬底中移除。针对如之前披露的以及参照图1至图4所描述的实施例，接着将第二衬底晶圆与所述第一衬底晶圆对齐并且将其结合至所述第一衬底晶圆的胶粘侧上，由此封闭或盖住这些流动池。在这些处理步骤之前或之后，一个或两个衬底可以具有多个通孔(通过任何方式制造)，这些通孔被定位在精确位置处以便创造流动池的入口和出口。
[段落31]所披露的实施例允许从包含多个芯片的晶圆上划切多个胶带内层流动池。典型的方法是使用划切锯。然而，在流动池被构造成具有胶带内层的情况下，所述胶带可以与切割刀片形成密封，这种密封限制了冷却流体流入切缝中并且致使所述刀片过热。在所提出的方法中，可以将胶带从划切线26移除(如图6所示)以便在经由激光烧蚀或激光切割进行的划切操作之前、以类似的用于创造流动通道15的方式同时地创造多个独立的胶带层遮片。这为划切锯和冷却流体留下了清晰的路径。在替代性实施例中，这些划切线可以具有足够的宽度以将这些胶带层遮片隔开以便放在衬底的井槽中，如随后将描述的。额外的处理步骤将是，在施加胶带之前对晶圆进行预处理并且留下小的区域(接片)以将晶圆作为整体单元保持在一起。在施加胶带层并且进行如所描述的进行处理以便创造流动通道15和划切线26之后，仅需要切割这些小的接片区域来分开这些独立芯片。可以在胶带切割过程中或之后用激光切割这些小的接片区域，由此消除了对所完成的晶圆进行锯切。
[段落32]如图8所示，在胶带式流动池的另一个实施例中，胶带层14被接纳在底部衬底62中的井槽60内。所述井槽被设计成使得，井槽60的高度63是限定流动池的所希望高度的精确尺寸。井槽高度将优选地略微小于胶带层14的厚度，使得它在胶带上提供一些压缩力以改善流动池在组装时的粘附和加压能力，如随后所描述的。底部衬底62的、环绕着井槽60的外边缘64还将提供平坦表面66，所述平坦表面可以被激光结合至加盖衬底68上，所述加盖衬底具有足以与下部衬底62中的边缘64重叠的长度69a和宽度69b。这些边缘64上的平坦表面66确保了，流动通道15的顶表面和底表面与仅用胶带作为内层而制造的流动池相比，在显著更紧的公差内彼此平行。加盖衬底68在内表面上具有金属层70以便接合胶带层14、以及底部衬底62的边缘64。接着可以在匹配的下部衬底和加盖衬底的交界处实现室温激光结合，从而采用金属层70来创造如在申请序列号13/291,956中所描述的局部等离子体。还可以将电引线引入如本文描述的结合部中。延伸跨过边缘64上的平坦表面66的金属层70提供了环绕着井槽60的边界区域以用于创造局部等离子体。针对图8的实施例，可以在下部衬底62的平坦外表面上沉积第二金属层72。如之前关于现有实施例所描述的，可以在相应的金属层70、72中蚀刻出或以其他方式形成匹配切口71、73，以便观察在胶带层14中创造的流动通道15。
[段落33]图9中所示的部分组装后的视图演示了胶带层14被接纳在井槽60中，其中金属层70延伸了加盖衬底68的总侧向长度和宽度尺寸，并且金属层72覆盖了下部衬底60的外表面。图10示出了完全组装好的并且经激光结合的流动池80。可以对金属层70进行蚀刻以提供电触点，如之前参照图3和图4所描述的。
[段落34]针对如参照图1、图2、图3和图4所披露和描述的实施例，对流动池提供超过胶带层与衬底之间的粘合剂结合强度的额外支撑可能是希望的。图11示出了接纳流动池20的具有矩形腔84的芯片包壳82，所述矩形腔在一侧88上具有开口86。所述芯片包壳82的顶部和底部中的一者或两者中的孔口90允许观察这些流动通道。如图12所示，腔84具有与组装后的流动池20的厚度相对应的高度92。所述高度可以被设计成要求轻微压缩所述流动池以便插入所述腔中，从而通过将衬底10、16(具有金属层12、18)牢固地抵靠胶带层14压缩来增强流动通道15的密封。所述芯片包壳82包壳可以是单一整体件(机加工或模制而成)或两个半部件(永久地结合/栓接在一起)，并且它可以是可再使用的。它可以是任何材料、优选地聚合物或金属(例如迭尔林(Delrin)、聚氨酯、铝或不锈钢)。
[段落35]所描述的实施例提供了一种如图13A和图13B所示的用于制造流动池的方法。步骤1302，提供衬底，所述衬底的一个表面上具有沉积的金属层。步骤1304，可以将所述金属层蚀刻或以其他方式形成为包括多个匹配切口以便观察流动通道。步骤1306，可以额外地将所述层蚀刻或以其他方式形成为包括多条一体电引线，并且步骤1308在某些情况下，将其形成为包括多条导电迹线。步骤1310，将胶带层粘附至所述衬底上。步骤1312，接着激光切割所述胶带层以便形成多个流动通道。步骤1314，在晶圆处理方法中，可以额外地切割多条划切线以用于将所述晶圆上的流动池分开。步骤1316，提供匹配衬底，所述匹配衬底的一个表面上具有沉积的第二金属层。步骤1318，可以将所述第二金属层蚀刻或以其他方式形成为包括多个匹配切口以便观察这些流动通道。步骤1320，可以额外地将所述第二金属层蚀刻或以其他方式形成为包括多条一体电引线、并且步骤1322在某些情况下，将其形成为包括多条导电迹线。步骤1324，接着将所述匹配衬底与所述胶带层对齐并且结合至其上。在替代性排序中，步骤1325，可以完全组装所述衬底、胶带层和匹配衬底，而无需在之前将这些切口结构化以及将蚀刻剂引入由所述胶带层创造的流动通道中来在第一金属层和第二金属层中蚀刻出匹配切口。步骤1326，如果作为晶圆来处理，则划切这些独立的流动池。替代地，第一晶圆的划切可以发生在胶带流动通道和划切线的激光切割之后，并且接着可以向这些独立流动的池遮片施加独立的匹配衬底。针对采用具有用于接纳胶带层的井槽的衬底的实施例，步骤1328，使在环绕所述井槽的边缘处匹配的这些衬底相接合，并且步骤1330，完成室温激光结合以便密封所述流动池。如果采用参照图1和图2所描述的流动池，则步骤1332，可以通过在外壳中引入在一端处具有开口的矩形腔来制造可选的芯片包壳。步骤1334，可以将用于观察这些流动通道的孔口引入所述芯片包壳中。步骤1336，接着将所述流动池插入(潜在地通过略微地压缩)所述腔中。
[段落36]现已如专利法规所要求的对本披露的不同实施例进行了详细说明，本领域技术人员将认识到在此披露的具体实施例的改变和替代。这类改变是处于如以下权利要求所限定的本披露的范围和意图内。

Claims (25)

1.一种流动池，包括：
第一衬底(10)，所述第一衬底在至少一个表面上具有金属层(13)；
具有多个流动通道(15)的胶带层(14)，所述胶带层粘附至所述第一衬底上；
第二衬底(16)，所述第二衬底在至少一个表面上具有第二金属层(18)，所述第二衬底与所述第一衬底相反地粘附至所述胶带层上，其中，所述第一金属层和第二金属层中的至少一者包括匹配切口(13，19)，用于至少部分地暴露这些流动通道。
2.如权利要求1所述的流动池，其中，所述胶带层中的流动通道是激光切割而成的。
3.如权利要求2所述的流动池，其中，晶圆(25)包含多个第一衬底，其中胶带层粘附至所述晶圆上，所述胶带层经激光切割以形成多个胶带层遮片。
4.如权利要求3所述的流动池，其中，所述胶带层遮片是通过激光切割的划切线分开的。
5.如权利要求1所述的流动池，其中，所述第一衬底包含有井槽(60)，并且所述胶带层被接纳在所述井槽内。
6.如权利要求5所述的流动池，其中，所述第一衬底具有从所述井槽延伸的多个边缘(64)。
7.如权利要求6所述的流动池，其中，所述第二衬底延伸以接合所述第一衬底上的边缘。
8.如权利要求7所述的流动池，其中，所述第二金属层包括边界区域，所述边界区域在室温激光结合的过程中产生局部等离子体。
9.如权利要求1所述的流动池，其中，所述第一金属层包含有一体电引线(22)。
10.如权利要求9所述的流动池，其中，所述第二金属层、胶带层和第二衬底包含有引线切口(24)，所述引线切口暴露用于所述一体电引线的接触衬垫(23)。
11.如权利要求1所述的流动池，其中，所述胶带层利用可释放粘合剂粘附至所述第一和第二衬底上。
12.如权利要求1所述的流动池，其中，所述金属层中的匹配切口是蚀刻而成的。
13.如权利要求12所述的流动池，其中，所述匹配切口是在粘附所述第二衬底之后蚀刻而成的。
14.一种包括具有矩形腔的外壳(82)的芯片包壳，所述矩形腔具有开口，所述开口的大小经设定成用于接纳流动池(20)，所述腔具有与所述流动池的压缩后高度相对应的高度，所述外壳附加地包含有至少一个孔口(90)，所述孔口的大小经设定成用于至少部分地暴露所述流动池中的流动通道以便观察。
15.如权利要求14所述的芯片包壳，其中，所述外壳是由选自包括迭尔林和聚氨酯在内的一组聚合物以及包括铝和不锈钢在内的金属中的材料制成。
16.一种用于制造流动池的方法，包括：
提供衬底，所述衬底在一个表面上具有沉积的金属层；
将所述金属层形成为包括匹配切口以便观察流动通道；
将胶带层粘附至所述衬底上；
激光切割所述胶带层以形成流动通道；
提供匹配衬底，所述匹配衬底在一个表面上具有沉积的第二金属层；
将所述第二金属层形成为包括匹配切口以便观察所述流动通道；
将所述匹配衬底与所述胶带层对齐并且将所述匹配衬底结合至所述胶带层上。
17.如权利要求16所述的方法，进一步包括将所述第一和第二金属层中的至少一者附加地形成为包括一体电引线。
18.如步骤17所述的方法，进一步包括将所述第一和第二金属层中的至少一者形成为包括导电迹线。
19.如权利要求16所述的方法，进一步包括划切各个流动池。
20.如权利要求19所述的方法，进一步包括切割划切线以便将所述晶圆上的流动池分开。
21.如权利要求16所述的方法，其中，所述第一衬底包含有井槽，所述方法进一步包括：
将所述胶带层接纳在所述井槽内；
使所述衬底在环绕井槽的边缘处相匹配；并且，
进行室温激光结合以便密封所述流动池。
22.如权利要求16所述的方法，进一步包括：
通过在外壳中的一端处引入具有开口的矩形腔来制造芯片包壳；并且，
插入所述流动池。
23.如权利要求22所述的方法，进一步包括在插入之前压缩所述流动池。
24.如权利要求22所述的方法，进一步包括将用于观察所述流动通道的孔口引入所述芯片包壳中。
25.如权利要求16所述的方法，其中，形成所述金属层以及形成第二金属层的步骤是在粘附所述胶带层以及对齐所述匹配衬底以及将所述匹配衬底结合至所述胶带层上之后完成的，所述步骤包括将蚀刻剂引入所述流动通道以蚀刻所述金属层。
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