CN107840664A - 硅铝氧氮陶瓷烧结体、其制法、复合基板及电子器件 - Google Patents
硅铝氧氮陶瓷烧结体、其制法、复合基板及电子器件 Download PDFInfo
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- CN107840664A CN107840664A CN201710846104.8A CN201710846104A CN107840664A CN 107840664 A CN107840664 A CN 107840664A CN 201710846104 A CN201710846104 A CN 201710846104A CN 107840664 A CN107840664 A CN 107840664A
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- sialon
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- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
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Abstract
本发明涉及一种硅铝氧氮陶瓷烧结体、其制法、复合基板及电子器件。本发明的硅铝氧氮陶瓷烧结体由Si6‑zAlzOzN8‑z(0<z≤4.2)表示,开口气孔率为0.1%以下,相对密度为99.9%以上,且X射线衍射图中,硅铝氧氮陶瓷以外的各成分的最大峰的强度的总和相对于硅铝氧氮陶瓷的最大峰的强度的比值为0.005以下。
Description
技术领域
本发明涉及硅铝氧氮陶瓷烧结体、其制法、复合基板及电子器件。
背景技术
硅铝氧氮陶瓷为由通式:Si6-zAlzOzN8-z(0<z≤4.2)表示的物质的总称,是陶瓷材料中兼具有高强度、高杨氏模量、低热膨胀、高绝缘性的材料。将该陶瓷材料用作弹性波元件的复合基板的支撑基板的情况下,为了使其接合,要求为没有气孔、表面平坦性较高、整面均匀的组成。如专利文献1所示,制造硅铝氧氮陶瓷一般使用烧结助剂进行烧成。另一方面,还已知在制造硅铝氧氮陶瓷时不使用烧结助剂进行烧成的方法。例如,专利文献2中公开以下方法,即,将β-硅铝氧氮陶瓷用氮化硅和BN的粉末覆盖,在N2气体气氛下进行烧成。另外,专利文献3中公开如下方法,即,在氮化硅粉末中加入烷醇铝,水解后,过滤,将得到的粉末于600~900℃进行预烧,于1700~1900℃进行加压烧结,得到β-硅铝氧氮陶瓷烧结体。
现有技术文献
专利文献
专利文献1:日本特开平1-264973号公报
专利文献2:日本特开昭61-141671号公报
专利文献3:日本特开昭60-108371号公报
发明内容
但是,如果像专利文献1那样在硅铝氧氮陶瓷的制造时使用烧结助剂,则存在如下问题:组成不均匀,导致异相成分增多,或者气孔增多。如果异相成分增多,则研磨的难易度在硅铝氧氮陶瓷与异相成分之间有所不同,因此,存在表面平坦性不够高的问题。例如可以举出:在异相成分比硅铝氧氮陶瓷硬的情况下,异相成分不易被研磨,所以,容易残留为凸状;在异相成分较软的情况下,异相成分容易被研磨,从而容易变成孔。另外,如果材料内气孔较多,则即便研磨也会残留有源自于气孔的凹部分,因此,存在表面平坦性不够高的问题。另外,像专利文献2、3那样在硅铝氧氮陶瓷的制造时不使用烧结助剂进行常压烧成的情况下,由于硅铝氧氮陶瓷为难烧结性的材料,所以气孔不会完全排出到外部,容易残留在内部,不易使相对密度充分提高。
本发明是为了解决该课题而实施的,其目的是提供一种将表面研磨成镜面状时的表面平坦性较高的硅铝氧氮陶瓷烧结体。
本发明的硅铝氧氮陶瓷烧结体由Si6-zAlzOzN8-z(0<z≤4.2)表示,开口气孔率为0.1%以下,相对密度为99.9%以上,且X射线衍射图中,硅铝氧氮陶瓷以外的各成分的最大峰的强度的总和相对于硅铝氧氮陶瓷的最大峰的强度的比值为0.005以下。该硅铝氧氮陶瓷烧结体的开口气孔率较低,相对密度较高,异相较少,因此,将表面研磨成镜面状时的表面平坦性提高。
本发明的硅铝氧氮陶瓷烧结体的制法如下:按Si:Al:O:N=(6-z):z:z:(8-z)(其中0<z≤4.2),从纯度均为99.8质量%以上的氮化硅、氮化铝、氧化铝及二氧化硅的成分中选择组成,并且,确定质量比例,将各成分混合,制作原料粉末,将该原料粉末成型为规定形状后,以烧成温度1725~1900℃、压制压力100~300kgf/cm2进行热压烧成,由此,得到硅铝氧氮陶瓷烧结体。该制法通过压力将气孔排出,并且,促进致密化,因此,适合制造上述的本发明的硅铝氧氮陶瓷烧结体。
本发明的复合基板是将支撑基板和功能性基板接合而得到的复合基板,其中,所述支撑基板为上述的本发明的硅铝氧氮陶瓷烧结体。该复合基板的支撑基板为上述的本发明的硅铝氧氮陶瓷烧结体,因此,接合界面中实际接合的面积的比例增大,显示出良好的接合性。
本发明的电子器件利用了上述的本发明的复合基板。该电子器件中,作为支撑基板的硅铝氧氮陶瓷烧结体的热膨胀系数为3.0ppm/K(40-400℃)以下,因此,作为弹性表面波器件时的频率温度依赖性、过滤器性能得到大幅改善。另外,在兰姆波元件、薄膜谐振器(FBAR)、LED器件、光波导器件、开关器件、半导体器件等中,支撑基板的热膨胀系数也非常小,由此,性能提高。此外,通过调整硅铝氧氮陶瓷的组成(前述的z值),能够在热膨胀系数为3.0ppm/K以下的状态下调整杨氏模量,从而能够进行作为复合基板时的功能性基板的性能的微调整及最大化。
附图说明
图1是复合基板10的立体图。
图2是使用复合基板10制作的电子器件30的立体图。
符号说明
10-复合基板;12-压电基板;14-支撑基板;30-电子器件;32、34-IDT电极;36-反射电极。
具体实施方式
以下,对本发明的实施方式具体地进行说明,但是,本发明并不限定于以下的实施方式,应当理解可以在不脱离本发明的主旨的范围内基于本领域技术人员的通常知识适当加以变更、改良等。
本实施方式的硅铝氧氮陶瓷烧结体由Si6-zAlzOzN8-z(0<z≤4.2)表示,开口气孔率为0.1%以下,相对密度为99.9%以上(优选为99.95%以上),且X射线衍射图中,硅铝氧氮陶瓷以外的各成分(异相成分)的最大峰的强度的总和相对于硅铝氧氮陶瓷的最大峰的强度的比值为0.005以下。应予说明,X射线衍射图的测定条件如下:CuKα、40kV、40mA、2θ=10-70°。该硅铝氧氮陶瓷烧结体的开口气孔率较低,相对密度较高,异相较少,因此,将表面研磨成镜面状时的表面平坦性提高。如果开口气孔率较高、或者相对密度较低,则即便研磨,也会残留有源自于气孔的凹部分,因此,表面平坦性不够高。另外,如果异相成分较多,则研磨的难易度在硅铝氧氮陶瓷与异相成分之间有所不同,导致表面平坦性不够高。特别是异相成分不易被研磨的情况下,异相部容易以凸部的形式残留下来,与功能性基板的接合变得困难。作为异相成分,例如可以举出:Al2O3、Si2ON2、Si3Al6O12N2、多铝红柱石等。
根据本实施方式的硅铝氧氮陶瓷烧结体,能够减少研磨加工后的表面存在的气孔数。研磨加工后的表面的每100μm×100μm的面积中存在的最大长度0.5μm以上且深度0.08μm以上的气孔数优选为10个以下,更优选为5个以下,进一步优选为3个以下。
对于本实施方式的硅铝氧氮陶瓷烧结体的表面平坦性,例如优选满足:研磨加工成镜面状的表面的100μm×140μm的测定范围内的中心线平均粗糙度Ra为1.0nm以下、以及同一测定范围内的最大峰高与最大谷深的高度差Pt为30nm以下中的至少1个。Ra更优选为0.8nm以下。Pt更优选为25nm以下。
本实施方式的硅铝氧氮陶瓷烧结体的杨氏模量优选为180GPa以上,更优选为200GPa以上,进一步优选为220GPa以上。
本实施方式的硅铝氧氮陶瓷烧结体中,z的值优选为0.5≤z≤4.0。如果在该范围内,则能够使上述的气孔数进一步减少。z的值更优选为0.5≤z≤3.2。如果在该范围内,则能够使上述的气孔数更进一步减少。
接下来,对硅铝氧氮陶瓷烧结体的制造方法的实施方式进行说明。硅铝氧氮陶瓷烧结体的制造流程包括:制作硅铝氧氮陶瓷原料粉末的工序和制作硅铝氧氮陶瓷烧结体的工序。
(硅铝氧氮陶瓷原料粉末的制作)
原料粉末使用杂质金属元素含量为0.2质量%以下、平均粒径为2μm以下的市场上销售的氮化硅、氮化铝、氧化铝及二氧化硅粉末。使用这些原料,按Si:Al:O:N=(6-z):z:z:(8-z)(其中0<z≤4.2),选择组成,并且,确定质量比例,将各成分混合,制作原料粉末。z的值优选为0.5≤z≤4.0,更优选为0.5≤z≤3.2。各粉末优选较细,优选平均粒径为0.5~1.5μm,以便致密地烧结。应予说明,可以将通过加热而生成这些成分的前驱体物质用于各成分的原料。将各粉末混合,使其分散在溶剂中,制作硅铝氧氮陶瓷组成的浆料。混合方法没有特别限制,例如可以利用球磨机、超微磨碎机、珠磨机、喷射式粉碎机等。但是,此时需要充分注意从介质中混入的成分及其量。即,优选将即便混入也不会构成杂质的氧化铝、氮化硅制的球石、罐用于介质。另外,树脂制的罐、球石在烧成工序等中也能够除去,所以可以使用。金属制的介质的杂质量较多,故不优选。将得到的浆料干燥,使干燥物过筛,制成硅铝氧氮陶瓷原料粉末。应予说明,在粉碎时因介质成分等的混入而使得组成出现偏差的情况下,只要适当进行组成调整等而制成原料粉末即可。或者,可以按粉碎物中包含的各成分的质量为所期望的硅铝氧氮陶瓷组成,预先调整混合粉末的各成分的质量,由此,将粉碎物直接制成硅铝氧氮陶瓷原料粉末。
(硅铝氧氮陶瓷烧结体的制作)
将得到的硅铝氧氮陶瓷原料粉末成型为规定形状。成型的方法没有特别限制,可以使用通常的成型法。例如,可以通过金属模具,将如上所述的硅铝氧氮陶瓷原料粉末直接压制成型。压制成型的情况下,如果将硅铝氧氮陶瓷原料粉末通过喷雾干燥制成颗粒状,则成型性变得良好。此外,可以加入有机粘合剂制作生坯进行挤压成型、或者制作浆料进行片状成型。这些工艺中,需要在烧成工序前或者烧成工序中除去有机粘合剂成分。另外,可以通过CIP(冷等静压制)进行高压成型。
接下来,对得到的成型体进行烧成,制作硅铝氧氮陶瓷烧结体。此时,为了提高硅铝氧氮陶瓷烧结体的表面平坦性,维持烧结粒子微细并在烧结中排出气孔是非常重要的。作为其方法,热压法非常有效。通过使用热压法,与常压烧结相比,能够在低温下以微细粒子的状态进行致密化,并且,能够抑制常压烧结中经常看到的粗大气孔残留。热压时的烧成温度优选为1725~1900℃,为了使异相尽量少,更优选为1750~1900℃。另外,热压时的压制压力优选为100~300kgf/cm2,更优选为150~250kgf/cm2。对于烧成温度(最高温度)下的保持时间,可以考虑成型体的形状、大小、加热炉的特性等,适宜选择适当的时间。具体的优选保持时间例如为1~12小时,更优选为2~8小时。热压时的烧成气氛优选氮气氛,以便避免硅铝氧氮陶瓷的分解。
接下来,对复合基板的实施方式进行说明。复合基板是将功能性基板和上述的硅铝氧氮陶瓷烧结体制的支撑基板接合而得到的。接合界面中实际接合的面积的比例(接合面积比例)优选为80%以上,更优选为90%以上。如果像这样接合面积比例较大,则功能性基板和支撑基板显示出良好的接合性。作为功能性基板,没有特别限定,例如可以举出:钽酸锂、铌酸锂、氮化镓、硅等。接合方法可以为直接接合,也可以借助粘结层进行接合,但是,优选直接接合。直接接合的情况下,将功能性基板和支撑基板的各接合面活化后,在使两接合面相对的状态下,对两基板进行按压。对于接合面的活化,例如,除了通过对接合面照射惰性气体(氩等)的中性原子束来进行以外,通过照射等离子、离子束等来进行。另一方面,借助粘结层而接合的情况下,作为粘结层,例如使用环氧树脂、丙烯酸树脂等。功能性基板与支撑基板的厚度比(功能性基板的厚度/支撑基板的厚度)优选为0.1以下。图1中给出复合基板之一例。复合基板10是将作为功能性基板的压电基板12和支撑基板14通过直接接合进行接合而得到的。
接下来,对电子器件的实施方式进行说明。电子器件利用了上述的复合基板。作为该电子器件,除了弹性波器件(弹性表面波器件、兰姆波元件、薄膜谐振器(FBAR)等)以外,可以举出LED器件、光波导器件、开关器件等。弹性波器件中利用上述的复合基板的情况下,作为支撑基板的硅铝氧氮陶瓷烧结体的热膨胀系数非常小,为3.0ppm/K(40-400℃)以下,且杨氏模量较高,因此,功能性基板的约束力得到提高。结果,器件的频率温度依赖性得到大幅改善。图2中给出使用复合基板10制作的电子器件30之一例。电子器件30为单端口SAW谐振器、亦即弹性表面波器件。首先,使用通常的光刻技术,在复合基板10的压电基板12上形成多个电子器件30的图案,然后,通过切割切成一个一个的电子器件30。电子器件30通过光刻技术而在压电基板12的表面形成有IDT(InterdigitalTransducer)电极32、34和反射电极36。
【实施例】
以下,对本发明的实施例进行说明。应予说明,以下的实施例并不对本发明作任何限定。
1.原料粉末的制作
原料粉末使用市场上销售的氮化硅粉末(氧含量1.3质量%、杂质金属元素含量0.2质量%以下、平均粒径0.6μm)、氮化铝(氧含量0.8质量%、杂质金属元素含量0.1质量%以下、平均粒径1.1μm)、氧化铝(纯度99.9质量%、平均粒径0.5μm)、二氧化硅(纯度99.9质量%、平均粒径0.5μm)的粉末。
【表1】
如下制作硅铝氧氮陶瓷原料粉末A~G及J。即,首先,按具有表1所示的z值的硅铝氧氮陶瓷组成(Si6-zAlzOzN8-z),称量氮化硅、氮化铝、氧化铝、二氧化硅各粉末,以氧化铝为球石溶剂使用异丙醇,通过球磨机混合4小时,制作混合粉末的浆料。将得到的浆料在氮气流下于110℃进行干燥,使干燥物过筛,制成硅铝氧氮陶瓷原料粉末A~G及J。应予说明,为了抑制异相成分,优选硅铝氧氮陶瓷原料粉末的过量氧量较少,使硅铝氧氮陶瓷原料粉末A~G的过量氧量为1.0质量%以下。另一方面,使硅铝氧氮陶瓷原料粉末J的过量氧量为2.7质量%。
氮化硅原料粉末H仅使用前述的氮化硅粉末。氮化硅原料粉末I如下制造,即,按表1所示的组成,称量氮化硅、三氧化二钇(纯度99.9质量%以上、平均粒径1.1μm)、氧化镁(纯度99.9质量%、平均粒径1.8μm)各粉末,与硅铝氧氮陶瓷原料粉末A~G及J同样地制作干燥物,使其过筛而得到氮化硅原料粉末I。
2.烧结体的制作及评价
(1)实验例1
实验例1的硅铝氧氮陶瓷烧结体是使用金属模具将硅铝氧氮陶瓷原料粉末A成型为厚度约20mm后、通过石墨模具在压制压力200kgf/cm2下于最高温度1800℃热压烧成4小时而得到的。烧成气氛为氮气氛。得到的烧结体的直径为125mm,厚度为约8mm。从该烧结体上切出尺寸4mm×3mm×40mm的抗折棒等,评价各种特性。以下给出各种特性的评价方法。另外,将结果示于表2。应予说明,将4mm×3mm×10mm左右的试验片的一面通过研磨加工成镜面状,评价烧结体表面的性状。对于研磨,进行首先是3μm的金刚石磨粒、最终是0.5μm的金刚石磨粒的精研。
·体积密度、开口气孔率
通过使用了蒸馏水的阿基米德法来测定。
·相对密度
相对密度以体积密度÷表观密度的形式计算出来。
·结晶相及峰强度比Ix
将硅铝氧氮陶瓷烧结体粉碎,通过X射线衍射装置,鉴定硅铝氧氮陶瓷、异相,并且,计算出各相的最大峰的强度。应予说明,异相的确定中,需要充分注意在烧结体粉碎时来自研钵、碾槌等介质的混入相及其量。XRD装置使用全自动多目的X射线解析装置D8ADVANCE,将CuKα、40kV、40mA、2θ=10-70°作为测定条件。根据X射线衍射图,由下述式求出检测到的各异相(P、Q、R、···)的最大峰的强度(Ip、Iq、Ir、···)的总和相对于硅铝氧氮陶瓷的最大峰(2θ=32.8~33.5°)的强度(Ic)的比值(峰强度比Ix)。应予说明,最大峰与其它峰重叠的情况下,采用峰强度第二大的峰来代替最大峰。
Ix=(Ip+Iq+Ir···)/Ic
·硅铝氧氮陶瓷烧结粒的平均粒径
通过SEM,以127μm×88μm的视野观察断裂面处的硅铝氧氮陶瓷烧结粒,求出视野内的10个以上硅铝氧氮陶瓷烧结粒的粒径,将其平均值作为硅铝氧氮陶瓷烧结粒的平均粒径。应予说明,1个硅铝氧氮陶瓷烧结粒的粒径为其烧结粒的长径与短径的平均值。
·气孔数
通过3D测定激光显微镜观察如上所述加工成镜面状的面,在4处计量最大长度为0.5μm以上、深度为0.08μm以上的气孔在每单位面积的计数值,将其平均值作为气孔数。单位面积为100μm见方的面积。
·表面平坦性
使用三维光学轮廓仪(Zygo),对如上所述加工成镜面状的面测定中心线平均粗糙度Ra和最大峰高与最大谷深的高度差Pt。本说明书中的Ra和Pt与JIS B 0601:2013中规定的、截面曲线的算术平均粗糙度Ra和截面曲线的最大截面高度Pt相对应。以上述的Ra、Pt为表面平坦性。测定范围为100μm×140μm。
·杨氏模量
通过依据JIS R1602的静态挠曲法来测定。试验片形状为3mm×4mm×40mm抗折棒。
·热膨胀系数(40~400℃)
依据JIS R1618,通过推杆式示差热膨胀计来测定。试验片形状为3mm×4mm×20mm。
【表2】
如表2所示,实验例1的硅铝氧氮陶瓷烧结体具备优异的特性。具体而言,实验例1的硅铝氧氮陶瓷烧结体的体积密度为3.16g/cm3,开口气孔率为0.00%,相对密度为100.00%。对于结晶相,除了硅铝氧氮陶瓷以外,微量地检测到氧化铝、氮氧化硅。硅铝氧氮陶瓷以外的各成分的最大峰的强度的总和相对于硅铝氧氮陶瓷的最大峰的强度的比值(峰强度比)Ix为0.0012,非常小。在研磨面的100μm×100μm范围内,最大长度为0.5μm以上的气孔数非常少,为1个。对于研磨面的表面平坦性,可知:中心线平均粗糙度Ra低至0.4nm,最大峰高与最大谷深的高度差Pt低至15nm。
(2)实验例2~6
实验例2~6的硅铝氧氮陶瓷烧结体是使用表1所示的硅铝氧氮陶瓷原料粉末B、D~G来代替硅铝氧氮陶瓷原料粉末A与实验例1同样地进行热压烧成而得到的。将各硅铝氧氮陶瓷烧结体的特性示于表2。硅铝氧氮陶瓷烧结体的开口气孔率均为0.1%以下,相对密度均为99.9%以上,气孔数均为10个以下,峰强度比Ix均为0.005以下,具备优异的特性。
(3)实验例7
实验例7的硅铝氧氮陶瓷烧结体是使用硅铝氧氮陶瓷原料粉末C与实验例1同样地进行热压烧结而得到的。硅铝氧氮陶瓷原料粉末C与实验例2中使用的硅铝氧氮陶瓷原料粉末B相比,在z值为1.0这一点上是一致的,但是,作为起始原料,使用Si3N4、AlN及Al2O3这3个,就这一点而言,与使用Si3N4、AlN及SiO2这3个的硅铝氧氮陶瓷原料粉末B不同。实验例7的硅铝氧氮陶瓷烧结体具备与实验例2的硅铝氧氮陶瓷烧结体同样优异的特性,因此可知:起始原料只要按所期望的硅铝氧氮陶瓷从Si3N4、AlN、Al2O3及SiO2中适当选择即可。
(4)实验例8~12
实验例8~11是将实验例1、2、4、5的烧成时的最高温度变更为1750℃的例子,实验例12是将实验例3的烧成时的最高温度变更为1725℃的例子。如表2所示,可知:实验例8~12的硅铝氧氮陶瓷烧结体具备与实验例1~5的硅铝氧氮陶瓷烧结体同样优异的特性。
应予说明,实验例1~12的硅铝氧氮陶瓷烧结体的过量氧量为1.0质量%以下。
(5)实验例13~16
实验例13~16是将实验例1~3、5的烧成时的最高温度变更为1700℃的例子。实验例13~15的硅铝氧氮陶瓷烧结体的烧成温度过低,因此,开口气孔率超过0.1,相对密度为99.9%以下,致密化不充分,气孔数较多,为33个或者50个以上。实验例16的硅铝氧氮陶瓷烧结体的开口气孔率为0.01%,相对密度为99.97%,气孔数为2个,但是,峰强度比Ix高达0.0221,中心线平均粗糙度Ra及最大截面高度Pt的值劣化。认为峰强度比Ix较高的原因在于:由于烧成温度过低,所以原料成分的反应(硅铝氧氮陶瓷化)不充分,作为中间生成物之一的氧化铝更多地以异相的形式析出。另外,认为中心线平均粗糙度Ra、最大峰高与最大谷深的高度差Pt的值劣化的原因在于:以异相的形式析出的氧化铝与硅铝氧氮陶瓷的研磨难易度不同,由此,氧化铝以凸部的形式残留下来。
(6)实验例17、18
实验例17中,使用氮化硅原料粉末H(z=0)作为起始原料,除此以外,与实验例1同样地进行热压烧成。得到的烧成体的开口气孔率为52.1%,相对密度为47.95%,未烧结。实验例18中,使用氮化硅原料粉末I(z=0、添加作为烧结助剂的Y2O3和MgO)作为起始原料,除此以外,与实验例1同样地进行热压烧成。得到的烧结体由氮化硅特有的柱状化的结晶发达的组织构成,在晶界可见气孔。因此,研磨面的100μm见方的范围中,最大长度为0.5μm以上的气孔数为50个以上,无法减少气孔数。
(7)实验例19
实验例19的硅铝氧氮陶瓷烧结体使用硅铝氧氮陶瓷原料粉末J与实验例8同样地进行热压烧成。得到的烧成体的相对密度为99.98%,气孔数为3个,充分致密化。但是,峰强度比Ix高达0.0492,析出有较多异相,因此,中心线平均粗糙度Ra、最大截面高度Pt的值较差,无法得到充分的平坦性。该实验例19的硅铝氧氮陶瓷烧结体的过量氧量为2.7质量%,相当于日本特开昭62-212268号公报的实施例1。
应予说明,上述的实验例1~19中,实验例1~12相当于本发明的实施例,实验例13~19相当于比较例。
3.接合性
对于从实验例2、4、14的烧结体切出的直径100mm、厚度230μm的支撑基板,尝试与直径100mm、厚度250μm的LT基板接合。接合前的表面的活化处理中,使用FAB枪,对两基板照射氩的中性原子束。然后,将两基板贴合后,以接合载荷0.1ton压制1分钟,将支撑基板和LT基板于室温进行直接接合。对于由实验例2、4的烧结体得到的复合基板,在接合界面几乎没有观察到气泡,接合界面中实际接合的面积的比例(接合面积比例)为90%以上,良好地接合。与此相对,对于由实验例14的烧结体得到的复合基板,在接合界面观察到气泡,接合界面中实际接合的面积的比例(接合面积比例)为80%以下。此处,接合面积为没有气泡的部分的面积,接合面积比例为接合面积相对于接合界面整体的面积的比例。应予说明,此处使用了FAB枪,但是,取而代之,也可以使用离子枪。
本申请将2016年9月20日申请的国际申请PCT/JP2016/77627及2017年6月30日申请的日本专利申请第2017-129086号作为主张优先权的基础,其内容全部通过引用而包含在本说明书中。
产业上的可利用性
本发明除了用于表面弹性波元件以外,还可以利用于兰姆波元件、薄膜谐振器(FBAR)等电子器件。
Claims (8)
1.一种硅铝氧氮陶瓷烧结体,其中,
所述硅铝氧氮陶瓷烧结体由Si6-zAlzOzN8-z表示,其中,0<z≤4.2,开口气孔率为0.1%以下,相对密度为99.9%以上,且X射线衍射图中,硅铝氧氮陶瓷以外的各成分的最大峰的强度的总和相对于硅铝氧氮陶瓷的最大峰的强度的比值为0.005以下。
2.根据权利要求1所述的硅铝氧氮陶瓷烧结体,其中,
所述硅铝氧氮陶瓷烧结体的表面的、100μm×140μm的测定范围内的中心线平均粗糙度Ra为1.0nm以下。
3.根据权利要求1或2所述的硅铝氧氮陶瓷烧结体,其中,
所述硅铝氧氮陶瓷烧结体的表面的、100μm×140μm的测定范围内的最大峰高与最大谷深的高度差Pt为30nm以下。
4.根据权利要求1~3中的任意一项所述的硅铝氧氮陶瓷烧结体,其中,
所述硅铝氧氮陶瓷烧结体的杨氏模量为180GPa以上。
5.一种硅铝氧氮陶瓷烧结体的制法,其是制造权利要求1~4中的任意一项所述的硅铝氧氮陶瓷烧结体的方法,其中,
按Si:Al:O:N=(6-z):z:z:(8-z),其中,0<z≤4.2,从纯度均为99.8质量%以上的氮化硅、氮化铝、氧化铝及二氧化硅的成分中选择成分,并且,确定质量比例,将各成分混合,制作原料粉末,将该原料粉末成型为规定形状后,以烧成温度1725~1900℃、压制压力100~300kgf/cm2进行热压烧成,由此,得到硅铝氧氮陶瓷烧结体。
6.一种复合基板,其是将支撑基板和功能性基板接合而得到的复合基板,其中,
所述支撑基板为权利要求1~4中的任意一项所述的硅铝氧氮陶瓷烧结体。
7.根据权利要求6所述的复合基板,其中,
所述接合为直接接合。
8.一种电子器件,其中,
所述电子器件利用了权利要求6或7所述的复合基板。
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JP2017129086A JP7018267B2 (ja) | 2016-09-20 | 2017-06-30 | サイアロン焼結体、その製法、複合基板及び電子デバイス |
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US10399906B2 (en) | 2019-09-03 |
DE102017008649B4 (de) | 2023-01-05 |
US20180079690A1 (en) | 2018-03-22 |
DE102017008649A1 (de) | 2018-03-22 |
KR20180031588A (ko) | 2018-03-28 |
KR102395407B1 (ko) | 2022-05-10 |
CN107840664B (zh) | 2021-09-21 |
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