CN107768279A - 用于沉积氟氧化铝层以快速恢复在蚀刻腔室中的蚀刻量的方法 - Google Patents
用于沉积氟氧化铝层以快速恢复在蚀刻腔室中的蚀刻量的方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 45
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 31
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Abstract
本公开内容的实现方式提供用于处理腔室中的腔室部件。腔室部件包括:主体,所述主体在等离子体处理腔室中使用;氧化物阻挡层,所述氧化物阻挡层形成在主体的暴露表面的至少一部分上,氧化物阻挡层具有约2gm/cm3或更大的密度;以及氟氧化铝层,所述氟氧化铝层形成在氧化物阻挡层上,氟氧化铝层具有约2nm或更大的厚度。
Description
技术领域
本公开内容的实施方式大体涉及改良的腔室部件和用于处理腔室部件的方法。
背景技术
半导体工业中的等离子体反应器通常由含铝材料组成。尤其在多晶硅、金属或氧化物蚀刻腔室中,当诸如NF3或CF4的含氟气体用作蚀刻化学剂时,可以在铝表面上形成氟化铝层。可以看出,在铝腔室表面上形成氟化铝可以导致蚀刻速率漂移和腔室不稳定性。在腔室表面上的氟化铝也可因等离子体处理而剥落并以颗粒污染要在腔室中处理的基板表面。
因此,本领域中需要提供处理腔室部件的改进工艺,使得最小化或避免在处理期间的蚀刻速率漂移问题和基板表面上的氟化铝污染的可能性。
发明内容
本公开内容的实现方式提供用于处理腔室中的腔室部件。腔室部件包括:主体,所述主体在等离子体处理腔室中使用;氧化物阻挡层,所述氧化物阻挡层形成在主体的暴露表面的至少一部分上,氧化物阻挡层具有约2gm/cm3或更大的密度;以及氟氧化铝层,所述氟氧化铝层形成在氧化物阻挡层上,氟氧化铝层具有约2nm或更大的厚度。
在另一实现方式中,提供用于处理腔室部件的方法。方法包括:将腔室部件主体的暴露表面的至少一部分暴露于氧,其中腔室部件主体的暴露表面包括铝;以及将腔室部件主体暴露于在约5℃至约50℃的温度下的包括氢氟酸(HF)、氟化铵(NH4F)、乙二醇和水的溶液达约30分钟或更久,以便将氧化物阻挡层的至少一部分转换成氟氧化铝层。
在又一实现方式中,方法包括:在腔室部件主体的暴露表面的至少一部分上形成氧化物阻挡层,其中腔室部件主体的暴露表面包括铝;以及通过将腔室部件主体暴露于在约5℃至约50℃的温度下的包括约29体积%的49%氢氟酸(HF)、约11体积%的40%氟化铵(NH4F)、和60体积%的100%乙二醇的溶液达约30分钟或更久,在氧化物阻挡层上形成氟氧化铝层。
附图说明
通过参考附图中描述的本公开内容的说明性实施方式,可以理解上文简要概述并在下文更详细讨论的本公开内容的实施方式。然而,应当注意,附图仅例示了本公开内容的典型实施方式,并且因此不被视为限制本公开内容的范围,因为本公开内容可允许其他同等有效的实施方式。
图1描绘用于处理用于基板处理腔室中的腔室部件的方法的流程图。
图2A至图2B示出根据图1的流程图的在方法的各个阶段期间的腔室部件的一部分的透视图。
图2C示出根据本公开内容的实现方式的腔室部件的一部分的透视图。
为了便于理解,在尽可能的情况下,使用相同的附图标记来标示附图中共有的相同元素。附图未按比例绘制并且为清晰起见而简化。设想的是,一个实施方式的元素和特征可有利地并入其他实施方式中,而无需另外赘述。
具体实施方式
图1描绘用于处理用于基板处理腔室(诸如等离子体处理腔室)中的腔室部件的方法100的流程图。图1参考图2A至图2B说明性地描述,图2A至图2B示出根据图1的流程图的在方法的各个阶段期间的腔室部件的一部分的透视图。本领域的技术人员将认识到,在图2A至图2B中示出的结构未按比例绘制。另外,设想的是,尽管在本文的描述和附图中说明各种步骤,但是并未暗示关于这些步骤的顺序或存在或不存在中间步骤的限制。除非明确指定,按顺序描绘或描述的步骤仅仅为了解释进行,而不排除各别步骤实际以并行或重叠方式执行的可能性,即使不是完全地,也是至少部分地。
如在图2A中所示,方法100在方框102处通过提供腔室部件202开始。腔室部件202可由铝、不锈钢、氧化铝、氮化铝或陶瓷制造。为了便于说明,腔室部件202被显示为矩形形状。设想的是,腔室部件202可以是等离子体处理腔室的任一部分,诸如腔室壁、腔室盖、喷头、处理配件环、屏蔽件、衬里、底座、或暴露于处理腔室内的等离子体环境的其他可替换的腔室部件。腔室部件202具有主体203。主体203可由单块材料制造以形成一件式主体,或由两个或更多个部件焊接或以其他方式接合在一起以形成一件式主体。在各种实现方式中,腔室部件202为由铝形成的一件式主体203。在一些实现方式中,腔室部件202可以是由涂布铝的不锈钢形成的一件式主体,其中铝涂层形成主体203的暴露表面或外表面205。或者,腔室部件202可以是由铝或涂布铝209的非铝材料组成的核心主体207中的任一个,使得核心主体207的暴露表面或外表面211是铝,如在图2C中示出的。尽管论述了铝,但是设想的是,暴露表面或外表面211可由不锈钢、氧化铝、氮化铝或陶瓷制成。
在方框104处,可选的氧化物阻挡层204在腔室部件202的主体203的外表面205上形成,如在图2A中示出的。氧化物阻挡层204可以是薄的、致密的氧化层。可以使用含氧气体(可以包括例如原子氧(O)、分子氧(O2)、臭氧(O3)、和/或蒸汽(H2O)等等其他含氧气体)在高温氧化炉中沉积薄的、致密的氧化层。也可使用诸如四乙基原硅酸盐(tetraethylorthosilicate,TEOS)的其他含氧化合物。氧化物阻挡层204可以具有约2gm/cm3或更大的密度,例如约5gm/cm3或更大的密度。氧化物阻挡层204可以具有约2nm至约18nm的厚度,诸如约4nm至约12nm,例如约7nm至约10nm。氧化物阻挡层204的厚度可根据处理要求或期望的阻挡层寿命而不同。
在一个示例性实现方式中,氧化物阻挡层204使用臭氧和/或TEOS在低于常压(sub-atmospheric)、基于非等离子体的化学气相沉积(CVD)处理腔室中在腔室部件202的表面上形成。在这种情况下,可以执行退火工艺以硬化氧化物阻挡层204。一个示例性退火工艺可以包括在氮气环境中将腔室部件202加热至850℃或更高(例如,1000℃或更高)的温度并维持约10秒。生成的氧化物阻挡层204可以具有约10gm/cm3或更大的密度,例如约15gm/cm3或更大的密度。
在一些实现方式中,氧化物阻挡层204的至少一部分可以是通常当腔室部件202的表面暴露于氧时形成的原生氧化物。当腔室部件存储在常压条件下时,或当少量氧保持在真空腔室中时,发生氧暴露。或者,整个氧化物阻挡层204可以是原生氧化物。
在方框106处,腔室部件202使用氟化工艺处理,使得氧化物阻挡层204的至少一部分或整个氧化物阻挡层204转变成氟氧化铝层206,如在图2B中示出的。氟氧化铝层206可以具有约2nm至约18nm的厚度,诸如约4nm至约12nm,例如约7nm至约10nm。可通过将腔室部件202暴露(例如,浸泡)于在约5℃至约50℃的温度范围下的含有氢氟酸(HF)、氟化铵(NH4F)、乙二醇和水(H2O)的溶液中达约30分钟或更久时间,诸如约60分钟或更久时间、约120分钟或更久时间、约180分钟或更久时间、或约300分钟或更久时间来执行氟化工艺。氢氟酸和氟化铵相互反应并且与腔室部件202的氧化铝表面反应以形成氟氧化铝层206。具体地说,氟化工艺在腔室部件202的暴露表面的至少一部分上将部分的或整个氧化铝表面转换成保护的氟氧化铝层206。一旦形成保护的氟氧化铝层206,则防止底层的(underlying)铝表面受到溶液中的诸如氢氟酸的酸剂腐蚀。乙二醇也用以减缓或延迟铝表面与氢氟酸之间的蚀刻反应,因此保护底层的铝表面免受氢氟酸的过度蚀刻。
氢氟酸可以是含有49重量%的氟化氢(即,49%HF)的标准HF溶液。氟化铵可以是固态或水溶液。在一个实现方式中,使用约40重量%的NH4F的浓度的氟化铵溶液。
在各种实现方式中,溶液可以含有约15体积%-45体积%的49%HF、约5体积%-25体积%的40%NH4F、和约45体积%-75体积%的100%乙二醇。在一个示例性实现方式(以下实施方式1)中,溶液含有约29体积%的49%HF、约11体积%的40%NH4F、以及60体积%的100%乙二醇。如果使用固态氟化铵,那么溶液可以含有约20体积%-40体积%的49%HF、约30g/L-55g/L的NH4F、约50体积%-75体积%的100%乙二醇、以及约2体积%-12体积%的水(H2O)。在一个示例性实现方式(以下实施方式2)中,溶液含有约31.6体积%的49%HF、约44.6g/L的NH4F、63.1体积%的100%乙二醇、以及5.4体积%的水。
下表1示出了在不同的工艺时间和条件下使用实施方式1中使用的溶液处理的氟氧化铝层(10nm厚度)的原子浓度(以%计)。表1中所示的数字被归一化为检测到的元素的100%。未检测到H或He。另外,短划线“-”指示未检测到元素。
表1
在表1中示出的试验编号1至4分别表示浸泡在溶液中达30分钟、60分钟、90分钟和120分钟的腔室部件。具体来说,在试验号1至4中进行氟化工艺,而不在腔室部件表面上形成氧化物阻挡层。因此,腔室部件202的铝表面可不具有原生氧化物,或可以仅具有痕量的原生氧化物。试验编号R表示未经过本发明的氟化工艺的任何处理的机械腔室部件。试验编号A1和A2分别表示浸泡在溶液中达30分钟和60分钟的腔室部件。试验编号A1和A2的腔室部件具有在其上形成的氧化物阻挡层。可以看出,使用氟化工艺来处理的腔室部件(有或没有氧化物阻挡层)示出相较于试验编号R来说具有显著更高浓度的F,从而表示腔室部件的氧化铝表面被氟饱和。也就是说,当使用氟化工艺处理腔室部件时,氟氧化铝层206形成在腔室部件202的表面上。
应当理解,使用上述溶液的氟化工艺几乎没有蚀刻或腐蚀腔室部件202的氧化铝表面,因而保护腔室部件202的氧化铝表面和增加可以清洁腔室部件202的次数。如本文使用的“几乎没有蚀刻或腐蚀”(或其衍生物)旨在表示如由通过目视检查或万分之一英寸(0.0001英寸)的显微测量确定,在腔室部件202的氧化铝表面上没有可检测的腐蚀。另外,尽管论述了氢氟酸,但设想的是,也可使用其他化学剂,诸如氟氢化钠、氟化氢铵和氟硼酸铵。
在一些实现方式中,氧化物阻挡层204和/或氟氧化铝层206在腔室部件202上形成之前,腔室部件202的暴露表面(或至少与氧化物阻挡层204和/或氟氧化铝层206一起沉积的表面)可以通过喷磨(abrasive blasting)(可以包括例如,喷珠(bead blasting)、喷砂、苏打喷砂(soda blasting)、粉末喷砂和其他颗粒喷砂技术)而粗糙化以具有任意期望纹理。喷砂也可增强氧化物阻挡层204和/或氟氧化铝层206与腔室部件202的铝表面的粘附力。其他技术可用于粗糙化腔室部件202的暴露表面,包括机械技术(例如,砂轮磨损)、化学技术(例如,酸蚀刻)、等离子体蚀刻技术、以及激光蚀刻技术。腔室部件202的暴露表面(或至少与氧化物阻挡层204和/或氟氧化铝层206一起沉积的表面)可以具有在从约16微英寸(μin)至约220μin,诸如从约32μin至约120μin,例如从约40μin至约80μin的范围内的平均表面粗糙度。
在腔室部件202使用氟化工艺处理后,腔室部件可以安装在执行等离子体工艺的处理腔室中。
本公开内容的益处包括:通过将腔室部件暴露于在室温下的含有氢氟酸(HF)、氟化铵(NH4F)、乙二醇和水(H2O)的溶液达至少30分钟,在腔室部件的铝表面或氧化铝表面上形成保护的氟氧化铝层。一旦形成保护的氟氧化铝层,则保护底层的氧化铝表面免受氢氟酸腐蚀。乙二醇也延迟氧化铝表面与氢氟酸之间的蚀刻反应,因此保护底层的氧化铝表面免受氢氟酸的过度蚀刻。由于氟氧化铝层的形成,减少氧化铝表面上的不稳定的氟化铝(AlFx)的量。另外,氟氧化铝层减缓将F自由基吹扫进腔室部件的铝表面上,并且因此改进处理设备中的蚀刻量而没有AlFx污染。因此,避免蚀刻速率漂移和改进腔室稳定性。
尽管前述内容涉及本公开内容的实施方式,但是在不脱离本公开内容的基本范围的情况下,可以设计本公开内容的其他和进一步的实施方式。
Claims (20)
1.一种用于处理腔室中的腔室部件,包括:
主体,所述主体在等离子体处理腔室中使用;
氧化物阻挡层,所述氧化物阻挡层形成在所述主体的暴露表面的至少一部分上,所述氧化物阻挡层具有约2gm/cm3或更大的密度;以及
氟氧化铝层,所述氟氧化铝层形成在所述氧化物阻挡层上,所述氟氧化铝层具有约2nm或更大的厚度。
2.如权利要求1所述的腔室部件,其中所述主体包括铝、不锈钢、氧化铝、氮化铝或陶瓷。
3.如权利要求1所述的腔室部件,其中所述主体由单块铝、不锈钢、氧化铝、氮化铝或陶瓷形成。
4.如权利要求1所述的腔室部件,其中所述主体由单块不锈钢形成,并且随后涂布铝、氧化铝、氮化铝或陶瓷。
5.如权利要求1所述的腔室部件,其中所述主体包括:
核心;
铝涂层,所述铝涂层形成在所述核心之上。
6.如权利要求1所述的腔室部件,其中所述氧化物阻挡层是原生氧化物。
7.如权利要求1所述的腔室部件,其中所述氟氧化铝层具有约4nm至约12nm的厚度。
8.如权利要求1所述的腔室部件,其中所述主体具有约16μin至约220μin的平均表面粗糙度。
9.一种处理腔室部件的方法,包括:
将腔室部件主体的暴露表面的至少一部分暴露于氧,其中所述腔室部件主体的所述暴露表面包括铝;以及
将所述腔室部件主体在约5℃至约50℃的温度下暴露于包括氢氟酸(HF)、氟化铵(NH4F)、乙二醇和水的溶液达约30分钟或更久,以便将氧化物阻挡层的至少一部分转换成氟氧化铝层。
10.如权利要求9所述的方法,其中使用包括原子氧(O)、分子氧(O2)、臭氧(O3)或蒸汽(H2O)的含氧气体在高温氧化炉中形成所述氧化物阻挡层。
11.如权利要求10所述的方法,其中所述氧化物阻挡层具有约2gm/cm3或更大的密度。
12.如权利要求9所述的方法,其中所述氧化物阻挡层使用臭氧/TEOS通过低于常压、基于非等离子体的沉积工艺而形成。
13.如权利要求12所述的方法,其中所述氧化物阻挡层在氮气环境中经受退火工艺。
14.如权利要求13所述的方法,其中所述氧化物阻挡层具有约10gm/cm3或更大的密度。
15.如权利要求9所述的方法,其中所述氧化物阻挡层是原生氧化物。
16.如权利要求9所述的方法,其中所述氧化物阻挡层具有约2nm至约18nm的厚度。
17.如权利要求9所述的方法,其中所述腔室部件主体在约20℃至约30℃的温度范围下暴露于所述溶液。
18.如权利要求9所述的方法,其中所述氟化铵为固态或水溶液。
19.一种处理腔室部件的方法,包括:
在腔室部件主体的暴露表面的至少一部分上形成氧化物阻挡层,其中所述腔室部件主体的所述暴露表面包括铝;以及
通过将所述腔室部件主体暴露于在约5℃至约50℃的温度下的包括约29体积%的49%氢氟酸(HF)、约11体积%的40%氟化铵(NH4F)和60体积%的100%乙二醇达约30分钟或更久,在所述氧化物阻挡层上形成氟氧化铝层。
20.如权利要求19所述的方法,其中所述氧化物阻挡层具有约2gm/cm3或更大的密度。
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Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09326384A (ja) * | 1996-06-04 | 1997-12-16 | Anelva Corp | プラズマ処理装置 |
US5895586A (en) * | 1994-05-17 | 1999-04-20 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method in which a part of the processing chamber is formed using a pre-fluorinated material of aluminum |
JP2000058520A (ja) * | 1998-08-17 | 2000-02-25 | Sony Corp | 基体載置ステージ及びその製造方法、並びに、基体処理方法 |
JP2000239066A (ja) * | 1999-02-22 | 2000-09-05 | Kyocera Corp | 耐食性部材およびその製造方法、並びにそれを用いたプラズマ処理装置用部材 |
US6200516B1 (en) * | 1998-02-25 | 2001-03-13 | Ngk Insulators, Ltd. | Production of corrosion-resistant ceramic members |
US20010008207A1 (en) * | 1996-03-22 | 2001-07-19 | Kenji Ando | Method for forming thin films |
US20040099285A1 (en) * | 2002-11-25 | 2004-05-27 | Applied Materials, Inc. | Method of cleaning a coated process chamber component |
US20050037193A1 (en) * | 2002-02-14 | 2005-02-17 | Sun Jennifer Y. | Clean, dense yttrium oxide coating protecting semiconductor processing apparatus |
JP2007224348A (ja) * | 2006-02-22 | 2007-09-06 | Tokyo Electron Ltd | 耐環境部材、半導体製造装置及び耐環境部材の製造方法 |
CN101207002A (zh) * | 2006-12-22 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种半导体刻蚀设备中零件的表面处理方法 |
US20100129670A1 (en) * | 2008-11-12 | 2010-05-27 | Applied Materials, Inc. | Protective coatings resistant to reactive plasma processing |
CN102465286A (zh) * | 2010-11-15 | 2012-05-23 | 广州市泓硕环保科技有限公司 | 耐腐蚀处理组合物、材料及其制造方法 |
US20120171421A1 (en) * | 2010-12-29 | 2012-07-05 | Hon Hai Precision Industry Co., Ltd. | Coated article and method for making the same |
TW201229287A (en) * | 2011-01-04 | 2012-07-16 | Hon Hai Prec Ind Co Ltd | Vacuum depositing article and method for making the same |
CN104003354A (zh) * | 2014-06-18 | 2014-08-27 | 中山大学 | 一种铝纳米颗粒尺寸的调控方法及其应用 |
CN207587699U (zh) * | 2016-08-23 | 2018-07-06 | 应用材料公司 | 用于处理腔室中的腔室部件 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2694451B1 (fr) * | 1992-07-29 | 1994-09-30 | Asulab Sa | Cellule photovoltaïque. |
JP2000302553A (ja) * | 1999-04-14 | 2000-10-31 | Taiheiyo Cement Corp | 耐蝕性フッ化物基複合セラミックス焼結体 |
JP2001002463A (ja) * | 1999-06-15 | 2001-01-09 | Toshiba Ceramics Co Ltd | アルミナ部材の製造方法 |
KR100683186B1 (ko) * | 1999-07-23 | 2007-02-15 | 아메리칸 수퍼컨덕터 코포레이션 | 다층 제품 및 그의 제조방법 |
US6537689B2 (en) * | 1999-11-18 | 2003-03-25 | American Superconductor Corporation | Multi-layer superconductor having buffer layer with oriented termination plane |
US8231736B2 (en) * | 2007-08-27 | 2012-07-31 | Applied Materials, Inc. | Wet clean process for recovery of anodized chamber parts |
KR101465640B1 (ko) * | 2014-08-08 | 2014-11-28 | 주식회사 펨빅스 | 불화알루미늄 생성방지막이 형성된 cvd 공정챔버 부품 |
-
2017
- 2017-07-28 US US15/663,124 patent/US20180061617A1/en not_active Abandoned
- 2017-08-22 TW TW106128368A patent/TWI679702B/zh active
- 2017-08-22 KR KR1020170106080A patent/KR102439193B1/ko active IP Right Grant
- 2017-08-22 TW TW106212391U patent/TWM563653U/zh unknown
- 2017-08-23 JP JP2017159934A patent/JP2018032858A/ja active Pending
- 2017-08-23 CN CN201710728796.6A patent/CN107768279A/zh active Pending
- 2017-08-23 CN CN201721058541.5U patent/CN207587699U/zh active Active
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5895586A (en) * | 1994-05-17 | 1999-04-20 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method in which a part of the processing chamber is formed using a pre-fluorinated material of aluminum |
US20010008207A1 (en) * | 1996-03-22 | 2001-07-19 | Kenji Ando | Method for forming thin films |
JPH09326384A (ja) * | 1996-06-04 | 1997-12-16 | Anelva Corp | プラズマ処理装置 |
US6200516B1 (en) * | 1998-02-25 | 2001-03-13 | Ngk Insulators, Ltd. | Production of corrosion-resistant ceramic members |
JP2000058520A (ja) * | 1998-08-17 | 2000-02-25 | Sony Corp | 基体載置ステージ及びその製造方法、並びに、基体処理方法 |
JP2000239066A (ja) * | 1999-02-22 | 2000-09-05 | Kyocera Corp | 耐食性部材およびその製造方法、並びにそれを用いたプラズマ処理装置用部材 |
US20050037193A1 (en) * | 2002-02-14 | 2005-02-17 | Sun Jennifer Y. | Clean, dense yttrium oxide coating protecting semiconductor processing apparatus |
US20040099285A1 (en) * | 2002-11-25 | 2004-05-27 | Applied Materials, Inc. | Method of cleaning a coated process chamber component |
JP2007224348A (ja) * | 2006-02-22 | 2007-09-06 | Tokyo Electron Ltd | 耐環境部材、半導体製造装置及び耐環境部材の製造方法 |
CN101207002A (zh) * | 2006-12-22 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种半导体刻蚀设备中零件的表面处理方法 |
US20100129670A1 (en) * | 2008-11-12 | 2010-05-27 | Applied Materials, Inc. | Protective coatings resistant to reactive plasma processing |
CN102465286A (zh) * | 2010-11-15 | 2012-05-23 | 广州市泓硕环保科技有限公司 | 耐腐蚀处理组合物、材料及其制造方法 |
US20120171421A1 (en) * | 2010-12-29 | 2012-07-05 | Hon Hai Precision Industry Co., Ltd. | Coated article and method for making the same |
TW201229287A (en) * | 2011-01-04 | 2012-07-16 | Hon Hai Prec Ind Co Ltd | Vacuum depositing article and method for making the same |
CN104003354A (zh) * | 2014-06-18 | 2014-08-27 | 中山大学 | 一种铝纳米颗粒尺寸的调控方法及其应用 |
CN207587699U (zh) * | 2016-08-23 | 2018-07-06 | 应用材料公司 | 用于处理腔室中的腔室部件 |
Also Published As
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US20180061617A1 (en) | 2018-03-01 |
KR102439193B1 (ko) | 2022-08-31 |
JP2018032858A (ja) | 2018-03-01 |
TW201816889A (zh) | 2018-05-01 |
TWI679702B (zh) | 2019-12-11 |
TWM563653U (zh) | 2018-07-11 |
KR20180022590A (ko) | 2018-03-06 |
CN207587699U (zh) | 2018-07-06 |
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