TW201229287A - Vacuum depositing article and method for making the same - Google Patents

Vacuum depositing article and method for making the same Download PDF

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TW201229287A
TW201229287A TW100100101A TW100100101A TW201229287A TW 201229287 A TW201229287 A TW 201229287A TW 100100101 A TW100100101 A TW 100100101A TW 100100101 A TW100100101 A TW 100100101A TW 201229287 A TW201229287 A TW 201229287A
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Taiwan
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layer
substrate
amorphous
oxide layer
aluminum
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TW100100101A
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Chinese (zh)
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TWI496931B (en
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Hsin-Pei Chang
Wen-Rong Chen
Huann-Wu Chiang
Cheng-Shi Chen
Cong Li
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Hon Hai Prec Ind Co Ltd
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Abstract

The present disclosure provides a vacuum depositing article and a method for making the vacuum depositing article. The vacuum depositing article includes a substrate and an anti-finger print coat. The anti-finger print coat includes a non-crystal aluminum coat formed on the substrate and a non-crystal AlO<sub>x</sub>F<sub>y</sub> coat formed on the non-crystal aluminum coat with the x value being more than 0 and less than 1.5, with the y value being more than 0 and less than 3. The method for making the vacuum depositing article includes: providing a substrate; forming a non-crystal aluminum coat on the substrate by vacuum sputtering, with aluminum as a target and oxygen as a reacting gas; forming a non-crystal AlO<sub>x</sub>F<sub>y</sub> coat on the non-crystal aluminum coat by vacuum sputtering, with the aluminum as taget and oxygen, CF4 as reacting gases. The vacuum depositing article has a nice anti-finger print property.

Description

201229287 六、發明說明: 【發明所屬之技術領域】 種具 [0001] 本發明涉及一種锻膜件及其製備方法,尤其渉及 有抗指紋功能的鍍膜件及該鑛膜件的製備方法。 【先前技#ί】 [0002] 且需要使 傳統技術中,早期抗指紋化處理一般係採用在不錢鋼的 鍍鋅層上形成鉻酸鹽層及特殊的樹脂層。該方法首先泰 要在不銹鋼板上電鍍一層鋅,然後施以鉻酸鹽處理最 後以滚壓的方式塗上一層樹脂,其工藝繁鎖, 用鉻酸鹽處理,環境污染嚴重,成本較高。 [0003] 因此,為避免污染’降低成本,人們開始研究新的抗指 紋材料。目前工業上使用較多的係在美氧上喷塗—層有 機化學物質’如抗指紋塗料和抗指紋油等,藉“緣 燥使其附著在基體上。但係這種塗層的製備工藝也較複 雜而且摻雜於抗指紋塗料和抗指紋油中的有些填料還 存在游離Μ等,不利於環保和人體健康。另外,、這種 有機塗層耐磨性能差’使甩一段時間後容易磨損,使得 基體被暴露4來,防腐錢能大幅下降且影響美觀。此 外,抗指紋油的使用會使塗層表面看起來很油腻 ,大大 降低了視覺美感。 【發明内容】 圆鐾於Λ有&amp;要提供—種較為環㈣、抗減性能佳且 效果較為持久的鑛膜件。 另外’還有必要提供—種上述賴件的製備方法。 100100101 表單編號Α0101 第4頁/共16頁 1002000183-0 [0005] 201229287 [0006] —種鑛膜件,其包括一基體及一抗指紋層,該抗指紋層 [0007] 包括依次形成於基體表面的非晶氧化鋁層及氟化非晶氧 化鋁(AIO F)層’其中 0&lt;X&lt;1.5,0&lt;y&lt;3。 x y 一種鍍膜件的製備方法,其包括如下步驟: [0008] 提供一基體; [0009] 以鋁靶為靶材’以氧氣為反應氣體,採用磁控濺射鍍膜 法在該基體的表面濺鍍非晶氧化鋁層; [0010] 〇 以鋁靶為靶材’以氧氣、四氟化碳氣體為反應氣體,採 用磁控濺射鍍膜法在該非晶氧化鋁層的表面製備一氟化 非晶氧化銘(Al〇xFy)層,其中〇&lt;χ&lt;ι.5,〇&lt;y&lt;3。 [0011] 〇 相較於習知技術,所述的鍍膜件採用磁控濺射鍍膜的方 法在基體表面先形成一非晶氧化鋁層,再於非晶氧化鋁 層的表面形成一氟化非晶氧化鋁層,得以實現較佳的抗 指紋功能,藉由於基體上形成非晶氧化鋁詹後再通入四 氟化碳氣體以沉積氟化非晶氡化鋁層,可避免四氟化碳 氣體對基體的腐#。另外,所述的抗指紋層以磁控激射 鍍膜的方法形成,相較於傳統的抗指紋材料,其具有較 好的对磨!·生·=ΓΡ方止所述抗指紋層被磨損,使得所述的 鐘膜件的抗減魏更持久,外觀上也更具有美感。另 外’所述賴件及其製備方法較為環保。 【實施方式】 [0012] 。月參閱圖1本發明一較佳實施方式的鑛膜件包括基體 11及形成於基體11上的抗指紋層13。 [0013] 100100101 基體11的材質可為金屬或非金屬該 表單編號删1 m共16 Κ 10〇2〇〇〇183-〇 201229287 [0014] [0015] [0016] [0017] [0018] [0019] [0020] 銹鋼、鋁、鋁合金、銅、銅合金、鋅等。該非金屬材料 可包括陶究、玻璃等。 抗指紋層13包括依次形成於基體U表面的非晶氧化鋁層 131及氟化非晶氧化鋁層丨33。該抗指紋層13可以磁控濺 射鑛膜法形成’如中頻磁控濺射鍍膜法。 所述非晶氧化銘(Α1Λ)層131為奈米級的非晶態結構 ’其厚度為4 5 0 - 6 0 0 n in。 所述氟化非晶氧化鋁(A1〇xFy)層133為奈米級的非晶態 結構,其中 〇&lt;x&lt;15,0&lt;y&lt;3。 凊參閱圖2,為所述鍍膜件的掃描電鏡圖〔放大1〇萬倍 )。可以看到,氟化非晶氧先銘層133的表面形成有複數 均勻且密集分佈的奈米級乳突結構。該奈米級乳突結構 會形成眾多的奈米量級的氣孔’當水或_展在抗指紋 層13的表面時’氣孔被水或油封住形成氣封,該氣封進 而拖住水珠或油珠,使其不與抗指紋層13表面潤濕 ,達到抗指紋效果。 可以理解的,還可在基體_非晶氧化鋁層131之間設置 一金屬鋁的過渡層,以提高抗指紋層13於基體u的附著 力。對所述鑛膜件1G進行了水油接觸角測試,結果顯示所 述抗指紋層13與水油混合物的接觸角在1〇8_112。之間, 證明所述鍍膜件10具有良好的抗指紋功能。 本發明較佳實施方式的鍍膜件1G的製備方法包括如下步 100100101 表單編號A0101 第6頁/共16頁 1002000183-0 201229287 [0021] [0022] [0023] [0024] Ο [0025] G [0026] 驟: 提供基體11,並對該基體11進行清潔前處理。該清潔前 處理可包括以下步驟: 依次用去離子水及無水乙醇對基體11表面進行擦拭。 將基體11放入盛裝有丙酮溶液的超聲波清洗器中進行超 聲波清洗,以除去基體11表面的雜質和油污等。 對經上述清潔前處理後的基體11的表面進行電漿清洗, 以進一步去除基體11表面的髒污,以及改善基體11表面 與後續鍍層的結合力。 請參閱圖3,將基體11放入一磁控濺射鍍膜機20的鍍膜室 21中,裝入鋁靶23,抽真空該鍍膜室21至本底真空度為 3.0x10 5Torr,然後通入流量為300-500sccm (標準毫 升每分)的工作氣體氬氣(純度為99.999%),並對基體 11施加-300— 500V的偏壓,使鍍膜室21中產生高頻電壓 。所述鼠氣在1¾頻電壓下產生1¾}能氮氣電裘^該氮氣電 漿對基體11的表面進行物理轟擊,從而清除掉基體11表 面的髒污,達到清洗的目的。所述電漿清洗的時間可為 5 -1 0分鐘。 所述電漿清洗完成後,在所述鍍膜室21中以磁控濺射鍍 膜法,如中頻磁控濺射鍍膜法,在基體11的表面濺鍍非 晶氧化鋁層131。濺鍍該非晶氧化鋁層131時,加熱所述 鍍膜室21至溫度為150-420°C (即濺鍍溫度為150-420 °C ),保持氬氣的流量不變,通入流量為200-500sccm 的反應氣體氧氣,調節基體11的偏壓至-150〜-300V,開 100100101 表單編號A0101 第7頁/共16頁 1002000183-0 201229287 啟鋁靶23的電源,於基體11的表面沉積非晶氧化鋁層131 。所述鋁靶23可由中頻電源控制,其功率為5-10kW。該 非晶氧化鋁層131為奈米級的非晶態結構,其厚度在 450-600nm之間。沉積該非晶氧化鋁層131的時間可為 2 0 - 6 0分鐘。 [0027] 沉積完所述非晶氧化鋁層131後,保持氬氣的流量、基體 11的偏壓及鍍膜室21的溫度不變,降低氧氣的流量為 50-200sccm,向鑛膜室21通入四氟化碳(CFJ氣體, 並使四氟化碳的分壓在0.45-0. 63Pa之間,將鋁靶23的 電源改為射頻,其射頻功率密度為50-1 00W/cm2,以產 生射頻電磁場使四氟化碳氣體產生輝光放電及電漿化, 此時,電漿化的氧及氟同時與鋁靶23濺射出的粒子作用 ,而於所述非晶氧化銘層131的表面沉積一氣化非晶氧化 鋁(A10F )層 133,其中 0&lt;x&lt;1.5,0&lt;y&lt;3。沉積 X y 所述氟化非晶氧化鋁層133的時間為70-1 20分鐘。 [0028] 可以理解的,可在濺鍍非晶氧化鋁層131之前於基體11的 表面濺鍍一金屬鋁的過渡層,以提高抗指紋層13於基體 11的附著力。 [0029] 可以理解的,也可採用對非晶氧化鋁層131直接進行氟化 處理的方式來製備氟化非晶氧化鋁層133。 [0030] 以下結合具體實施例對鍍膜件10的製備方法及鍍膜件10 的抗指紋性能進行說明。各實施例中前處理均按上述揭 露的方式進行,這裏不再詳述。 [0031] 實施例1 100100101 表單編號A0101 第8頁/共16頁 1002000183-0 201229287 [0032] [0033] [0034] Ο [0035] [0036] [0037]201229287 VI. Description of the Invention: [Technical Field] The present invention relates to a forged film member and a method for preparing the same, and in particular to a coated member having an anti-fingerprint function and a method for preparing the same. [Previous Technology #ί] [0002] It is also necessary to make the early anti-fingerprinting treatment in the conventional technology to form a chromate layer and a special resin layer on the galvanized layer of the steel. The method firstly electroplating a layer of zinc on a stainless steel plate, and then applying a chromate treatment to apply a layer of resin in a rolling manner. The process is complicated, treated with chromate, and the environmental pollution is serious and the cost is high. [0003] Therefore, in order to avoid contamination and reduce costs, people began to study new anti-fingerprint materials. At present, most of the industrial use is sprayed on the US-based organic chemical substances such as anti-fingerprint coatings and anti-fingerprint oils, etc., by "drying to make it adhere to the substrate. But the preparation process of this coating It is also more complicated and some of the anti-fingerprint coatings and anti-fingerprint oils are free of ruthenium, etc., which is not conducive to environmental protection and human health. In addition, the organic coating has poor wear resistance, making it easy for a period of time. Wear and tear, so that the substrate is exposed 4, the anti-corrosion money can be greatly reduced and affect the appearance. In addition, the use of anti-fingerprint oil will make the surface of the coating look very greasy, greatly reducing the visual aesthetic. [Summary] & It is necessary to provide a kind of mineral film with relatively ring (four), good anti-reduction performance and long-lasting effect. In addition, it is necessary to provide a method for preparing the above-mentioned materials. 100100101 Form No. 1010101 Page 4 of 16 Page 1002000183 [0005] 201229287 [0006] A mineral film member comprising a substrate and an anti-fingerprint layer, the anti-fingerprint layer comprising an amorphous aluminum oxide layer and a fluorinated amorphous layer sequentially formed on a surface of the substrate Alumina (AIO F) layer 'where 0 &lt; X &lt; 1.5, 0 &lt; y &lt; 3. xy A method of preparing a coated member, comprising the following steps: [0008] providing a substrate; [0009] using an aluminum target as a target 'With oxygen as the reactive gas, the amorphous alumina layer is sputtered on the surface of the substrate by magnetron sputtering; [0010] 〇 using aluminum target as the target 'Oxygen, carbon tetrafluoride gas as the reaction gas, A layer of fluorinated amorphous oxidized (Al〇xFy) is prepared on the surface of the amorphous alumina layer by magnetron sputtering coating, wherein 〇 &lt; χ &lt; ι. 5, 〇 &lt; y &lt; 3. [0011] Compared with the prior art, the coating member adopts a magnetron sputtering coating method to form an amorphous aluminum oxide layer on the surface of the substrate, and then forms a fluorinated amorphous alumina on the surface of the amorphous aluminum oxide layer. The layer can realize a better anti-fingerprint function, and the carbon tetrafluoride gas can be avoided on the substrate by forming an amorphous alumina on the substrate and then introducing a carbon tetrafluoride gas to deposit a fluorinated amorphous aluminum halide layer. In addition, the anti-fingerprint layer is formed by a magnetron galvanic coating method, compared to The traditional anti-fingerprint material has a good anti-finishing effect. The anti-fingerprint layer is worn out, so that the anti-defining layer of the in-vehicle film member is more durable and more aesthetically pleasing in appearance. In addition, the present invention relates to a mineral film member including a substrate 11 and an anti-fingerprint layer 13 formed on the substrate 11. [0013] 100100101 The material of the base 11 may be metal or non-metal. The form number is 1 m total 16 Κ 10 〇 2 〇〇〇 183-〇 201229287 [0014] [0016] [0018] [0018] 0019] [0020] Stainless steel, aluminum, aluminum alloy, copper, copper alloy, zinc, and the like. The non-metallic material may include ceramics, glass, and the like. The anti-fingerprint layer 13 includes an amorphous alumina layer 131 and a fluorinated amorphous alumina layer 33 which are sequentially formed on the surface of the substrate U. The anti-fingerprint layer 13 can be formed by a magnetron sputtering film method, such as an intermediate frequency magnetron sputtering coating method. The amorphous oxide layer 131 is a nano-order amorphous structure 'having a thickness of 4 5 0 - 60 n n in. The fluorinated amorphous alumina (A1〇xFy) layer 133 is a nano-order amorphous structure in which 〇&lt;x&lt;15,0&lt;y&lt;3. Referring to Fig. 2, a scanning electron micrograph (magnified 1 million times) of the coated member is shown. It can be seen that the surface of the fluorinated amorphous oxygen precursor layer 133 is formed with a plurality of uniform and densely distributed nano-sized mastoid structures. The nano-sized mastoid structure will form a plurality of pores of the nanometer size. When the water or the surface of the anti-fingerprint layer 13 is formed, the pores are sealed by water or oil to form a gas seal, which in turn drags the water droplets. Or oil beads, so that they do not wet with the surface of the anti-fingerprint layer 13, achieving an anti-fingerprint effect. It will be appreciated that a transition layer of metallic aluminum may also be provided between the matrix-amorphous alumina layer 131 to enhance the adhesion of the anti-fingerprint layer 13 to the substrate u. The water-oil contact angle test was conducted on the film member 1G, and the results showed that the contact angle of the anti-fingerprint layer 13 with the water-oil mixture was 1〇8_112. In between, it is proved that the coated member 10 has a good anti-fingerprint function. A method for preparing a coated member 1G according to a preferred embodiment of the present invention includes the following steps: 100100101 Form No. A0101 Page 6 / Total 16 Page 1002000183-0 201229287 [0022] [0023] [0024] Ο [0025] G [0026 Step: The substrate 11 is provided, and the substrate 11 is subjected to a pre-cleaning treatment. The pre-cleaning treatment may include the following steps: The surface of the substrate 11 is wiped with deionized water and absolute ethanol in sequence. The substrate 11 is placed in an ultrasonic cleaner containing an acetone solution for ultrasonic cleaning to remove impurities, oil stains and the like on the surface of the substrate 11. The surface of the substrate 11 subjected to the above pre-cleaning treatment is subjected to plasma cleaning to further remove the dirt on the surface of the substrate 11, and to improve the bonding force between the surface of the substrate 11 and the subsequent plating. Referring to FIG. 3, the substrate 11 is placed in a coating chamber 21 of a magnetron sputtering coater 20, loaded into an aluminum target 23, and the coating chamber 21 is evacuated to a background vacuum of 3.0 x 10 5 Torr, and then a flow rate is introduced. A working gas of 300-500 sccm (standard milliliter per minute) was argon gas (purity of 99.999%), and a bias voltage of -300 - 500 V was applied to the substrate 11 to generate a high-frequency voltage in the coating chamber 21. The rat gas generates a nitrogen gas at a voltage of 13⁄4 volts. The nitrogen plasma physically bombards the surface of the substrate 11, thereby removing the dirt on the surface of the substrate 11 and achieving the purpose of cleaning. The plasma cleaning time can be 5 - 10 minutes. After the plasma cleaning is completed, the amorphous alumina layer 131 is sputtered on the surface of the substrate 11 by a magnetron sputtering plating method such as an intermediate frequency magnetron sputtering coating method in the coating chamber 21. When the amorphous aluminum oxide layer 131 is sputtered, the coating chamber 21 is heated to a temperature of 150-420 ° C (ie, the sputtering temperature is 150-420 ° C), the flow rate of the argon gas is kept constant, and the flow rate is 200. -500sccm of reaction gas oxygen, adjust the bias voltage of the substrate 11 to -150~-300V, open 100100101 Form No. A0101 Page 7 / Total 16 pages 1002000183-0 201229287 The power supply of the aluminum target 23 is deposited on the surface of the substrate 11 A crystalline alumina layer 131. The aluminum target 23 can be controlled by an intermediate frequency power source with a power of 5-10 kW. The amorphous aluminum oxide layer 131 is a nano-order amorphous structure having a thickness of between 450 and 600 nm. The time for depositing the amorphous aluminum oxide layer 131 may be from 20 to 60 minutes. [0027] After the amorphous alumina layer 131 is deposited, the flow rate of the argon gas, the bias of the substrate 11 and the temperature of the coating chamber 21 are kept constant, and the flow rate of the oxygen gas is reduced to 50-200 sccm, and the membrane chamber 21 is passed. Into the carbon tetrafluoride (CFJ gas, and the partial pressure of carbon tetrafluoride between 0.45-0. 63Pa, the power of the aluminum target 23 is changed to radio frequency, the RF power density is 50-1 00W/cm2, The radio frequency electromagnetic field is generated to generate a glow discharge and a plasma formation of the carbon tetrafluoride gas. At this time, the plasma oxygen and fluorine simultaneously act on the particles sputtered by the aluminum target 23, and on the surface of the amorphous oxide layer 131. A vaporized amorphous alumina (A10F) layer 133 is deposited, wherein 0 &lt; x &lt; 1.5, 0 &lt; y &lt; 3. The time for depositing X y of the fluorinated amorphous alumina layer 133 is 70-1 20 minutes. It can be understood that a metal aluminum transition layer can be sputtered on the surface of the substrate 11 before the amorphous alumina layer 131 is sputtered to improve the adhesion of the anti-fingerprint layer 13 to the substrate 11. [0029] As can be appreciated, The fluorinated amorphous aluminum oxide layer 133 may also be prepared by directly performing fluorination treatment on the amorphous aluminum oxide layer 131. [0030] The preparation method of the coated member 10 and the anti-fingerprint performance of the coated member 10 will be described below with reference to specific embodiments. The pretreatment in each embodiment is performed in the manner disclosed above, and will not be described in detail herein. [0031] Example 1 100100101 Form No. A0101 Page 8 / Total 16 Page 1002000183-0 201229287 [0033] [0034] [0036] [0037]

[0038] [0039] 電漿清洗:氬氣流量為500sccm,基體11的偏壓為-300V ,電漿清洗的時間為8分鐘; 滅鑛非晶氧化铭層131 :氬氣流量為32Osccm,氧氣流量 為280sccm,基體11的偏壓為-180V ’鋁靶23的功率為 10kW,濺鍍溫度為200°C,濺鍍時間為40分鐘,非晶氧 化铭層131的厚度為450nm。 製備氟化非晶氧化鋁(A10 F )層133 :氬氣流量為 X y 320sccm,氧氣流量為60sccm,四氟化碳氣體的分壓為 0. 45Pa,基體11的偏壓為-180V,射頻電磁場的功率密 度為55W/cm2,鍍膜室21的溫度為200°C,處理時間為80 分鐘。其中,A10F層133中X的值為0.5,y的值為2。 X y 按本實施例方法所製得的抗指紋層13與水油混合物的接 觸角為112°。 實施例2 電漿清洗:氬氣流量為350sccm,基體11的偏壓為-450V ’電聚清洗的時間為10分鐘, 濺鍍非晶氧化鋁層131 :氬氣流量為450sccm,氧氣流量 為450sccm,基體11的偏壓為-220V,鋁靶23的功率為 7kW,濺鍍溫度為390°C,濺鍍時間為55分鐘,非晶氧化 紹層131的厚度為600nm。 製備氟化非晶氧化鋁(A10 F )層133 :氬氣流量為 X y 450sccm,氧氣流量為150sccm,四氟化碳氣體的分壓為 0. 63Pa,基體11的偏壓為-220V,射頻電磁場的功率密 100100101 表單編號A0101 第9頁/共16頁 1002000183-0 201229287 度為7lW/cm2,鍍膜室21的溫度為390°C,處理時間為 1〇〇分鐘。其中,A10 F層133中X的值為1,y的值為1。 X y [0040] [0041] [0042] [0043] [0044] [0045] [0046] 按本實施例方法所製得的抗指紋層13與水油混合物的接 觸角為108。。 相較於習知技術,所述的鍍膜件10採用磁控濺射鍍膜的 方法在基體11表面先形成一非晶氧化鋁層131,再於非晶 氧化鋁層131的表面形成一氟化非晶氧化鋁層133,該氟 化非晶氧化鋁層133表面形成的均勻且密集分佈的奈米級 乳突結構使得所述抗指紋層13具有較佳的抗指紋功能; 藉由於基體11上形成非晶氧化鋁層131後再通入四氟化碳 ....... ....… 氣體以沉積氟化非晶氧化鋁層133,可避免四氟化碳氣體 對基體11的腐蝕。另外,所述的抗指紋層13以磁控濺射 鍍祺的方法形成,相較於傳統的抗指紋材料,其具有較 好的耐磨’可防止所述抗指紋層被磨損,使得所述 錢膜件1G的抗指紋功能更持久外觀上也更具有美感。 另外,所述顧㈣及其·方法較為環保。 【圖式簡單說明】 圖1係本發明較佳實施方式的鍵膜件的剖視示意圖。 圖2係本發明較佳實施方式的鍍膜件的掃描電鏡圖。 系本心月較L實施方式的磁控機射鑛膜機的俯視示意 圖。 【主要元件符號說明】 鍍膜件:10 基體:11 100100101 表單編號A0101 第10頁/共16頁 1002000183-0 201229287 [0047] 抗指紋層:13 [0048] 非晶氧化鋁層:1 31 [0049] 氟化非晶氧化鋁層:133 [0050] 磁控濺射鍍膜機:20 [0051] 鍍膜室:21 [0052] 鋁靶:23 100100101 表單編號A0101 第11頁/共16頁 1002000183-0[0039] plasma cleaning: argon gas flow rate is 500sccm, substrate 11 bias is -300V, plasma cleaning time is 8 minutes; ore-free amorphous oxidation layer 131: argon flow rate is 32Osccm, oxygen The flow rate was 280 sccm, and the bias voltage of the substrate 11 was -180 V. The power of the aluminum target 23 was 10 kW, the sputtering temperature was 200 ° C, the sputtering time was 40 minutes, and the thickness of the amorphous oxide layer 131 was 450 nm. The fluorinated amorphous alumina (A10 F ) layer 133 is prepared. The flow rate of the argon gas is X y 320 sccm, the oxygen flow rate is 60 sccm, the partial pressure of the carbon tetrafluoride gas is 0. 45 Pa, and the bias voltage of the substrate 11 is -180 V. The power density of the electromagnetic field was 55 W/cm 2 , the temperature of the coating chamber 21 was 200 ° C, and the treatment time was 80 minutes. Among them, the value of X in the A10F layer 133 is 0.5, and the value of y is 2. X y The contact angle of the anti-fingerprint layer 13 prepared in accordance with the method of this example with the water-oil mixture was 112°. Example 2 Plasma cleaning: argon gas flow rate was 350 sccm, substrate 11 bias voltage was -450 V 'electropolymer cleaning time was 10 minutes, sputtering amorphous aluminum oxide layer 131: argon gas flow rate was 450 sccm, oxygen flow rate was 450 sccm The substrate 11 has a bias voltage of -220 V, the aluminum target 23 has a power of 7 kW, a sputtering temperature of 390 ° C, a sputtering time of 55 minutes, and an amorphous oxide layer 131 of 600 nm. The fluorinated amorphous alumina (A10 F ) layer 133 is prepared. The flow rate of the argon gas is X y 450 sccm, the oxygen flow rate is 150 sccm, the partial pressure of the carbon tetrafluoride gas is 0.663 Pa, and the bias voltage of the substrate 11 is -220 V. The power density of the electromagnetic field 100100101 Form No. A0101 Page 9 / Total 16 pages 1002000183-0 201229287 The degree is 7lW/cm2, the temperature of the coating chamber 21 is 390 ° C, and the processing time is 1 〇〇 minute. Among them, the value of X in the A10 F layer 133 is 1, and the value of y is 1. The contact angle of the anti-fingerprint layer 13 and the water-oil mixture prepared according to the method of the present embodiment is 108. [0046] [0046] [0046] [0046] The contact angle of the anti-fingerprint layer 13 prepared by the method of the present embodiment is 108. . Compared with the prior art, the coating member 10 adopts a magnetron sputtering coating method to form an amorphous aluminum oxide layer 131 on the surface of the substrate 11 and a non-fluorinated non-crystalline layer on the surface of the amorphous aluminum oxide layer 131. The crystalline alumina layer 133, the uniform and densely distributed nano-sized mastoid structure formed on the surface of the fluorinated amorphous alumina layer 133, allows the anti-fingerprint layer 13 to have a better anti-fingerprint function; The amorphous aluminum oxide layer 131 is then introduced with carbon tetrafluoride. . . . gas to deposit a fluorinated amorphous aluminum oxide layer 133 to prevent corrosion of the substrate 11 by the carbon tetrafluoride gas. . In addition, the anti-fingerprint layer 13 is formed by magnetron sputtering and ruthenium plating, which has better wear resistance than the conventional anti-fingerprint material, which prevents the anti-fingerprint layer from being worn, so that the The anti-fingerprint function of the money film 1G is more aesthetically pleasing in appearance. In addition, the Gu (4) and its methods are more environmentally friendly. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a key film member according to a preferred embodiment of the present invention. 2 is a scanning electron micrograph of a coated member of a preferred embodiment of the present invention. A top-down schematic view of a magnetron jet filming machine of the present invention compared to the L embodiment. [Explanation of main component symbols] Coated parts: 10 Substrate: 11 100100101 Form No. A0101 Page 10 / Total 16 pages 1002000183-0 201229287 [0047] Anti-fingerprint layer: 13 [0048] Amorphous Alumina layer: 1 31 [0049] Fluorinated Amorphous Alumina Layer: 133 [0050] Magnetron Sputtering Coating Machine: 20 [0051] Coating Room: 21 [0052] Aluminum Target: 23 100100101 Form No. A0101 Page 11 / Total 16 Page 1002000183-0

Claims (1)

201229287 七、申請專利範圍: 種鍍膜件,其包括-基體,其改良在於:該鑛膜件還包 括-抗指紋層’該抗指紋層包括依次形成於基體表面的非 晶氧化鋁層及氟化非晶氧化鋁層,其中〇&lt;χ &lt; 1· 5 ’ 〇&lt;y &lt;3。 2 .如申請專利範圍第)項所述的錢膜件,其中所述非晶氧化 鋁層為奈米級的非晶態結構,其厚度為45〇 6〇〇nm。 3 .如申請專利範圍第!項所述的鑛膜件,其中所述就化非晶 氧化銘層為奈米級的非晶態結構,其表面形成有複數均勾 分佈的奈米級乳突結構。 4 .如申請專利範圍第丨項所述的鍍膜件,其冲所述抗指紋層 以磁控濺射鍍膜法形成。 5 .如申請專利範圍第w所述的鍍膜件,其中所述基體的材 質為金屬或非金屬。 6. —種鍍膜件的製備方法,其包括如下步驟· 提供一基體; 以峰為材’以氧氣為反應氣體,㈣磁控麟鑛膜法 在該基體的表面濺鍍非晶氧化鋁層; 以紹乾為乾材,以氧氣、四氟化碳氣體為反應氣體採用 磁控減射鍍膜法在該非晶氧化紹層的表面製備一氣化非晶 氧化紹(A10xFy)層,其中 〇&lt;x&lt;1.5,0&lt;y&lt;3。 7. 如申請專利範圍第6項所述的鍍膜件的製備方法其中減 鍍所述非晶氧化鋁層對基體設置_15〇~_3〇〇v的偏壓,濺 鍍溫度為1 50-42(TC,氧氣的流量為2〇〇_5〇〇sccm,以氬 氣為工作氣體,氬氣的流量為300-500sccm,鋁靶由中 100100101 表單編號A010I 第12頁/共16頁 1002000183-0 201229287 頻電源控制,其功率為5-1 OkW,濺鑛時間為20-60分鐘 〇 8 .如申請專利範圍第6項所述的鍍膜件的製備方法,其中製 備所述氟化非晶氧化鋁層對基體設置-150〜-300V的偏壓 ,錢鍵溫度為150-420°C,氧氣的流量為50-200sccm, 以氣氣為工作氣體,氬氣的流量為300-500sccm,四氟 化碳的分壓在0.45-0. 63Pa之間,鋁靶由射頻電源控制 ,其射頻功率密度為50-1 00W/cm2,處理時間為70-120 分鐘。 ^ 9 .如申請專利範圍第6項所述的鍍膜件的製備方法,其中所 述製備方法還包括在濺鍍非晶氧化鋁層前於基體表面濺鍍 一金屬鋁的過渡層的步驟。 10 .如申請專利範圍第9項所述的鍍膜件的製備方法,其中所 述製備方法還包括在濺鍍鋁的過渡層前對基體進行清潔前 處理及電漿清洗的步驟。 Ο 100100101 表單編號A0101 第13頁/共16頁 1002000183-0201229287 VII. Patent application scope: A coated material comprising a substrate, the improvement comprising: the mineral film member further comprising an anti-fingerprint layer, wherein the anti-fingerprint layer comprises an amorphous aluminum oxide layer sequentially formed on the surface of the substrate and fluorinated An amorphous alumina layer, wherein 〇 &lt; χ &lt; 1· 5 ' 〇 &lt; y &lt; 2. The money film member according to claim 5, wherein the amorphous aluminum oxide layer is a nano-order amorphous structure having a thickness of 45 〇 6 〇〇 nm. 3. If you apply for a patent scope! The mineral film member according to the invention, wherein the amorphous amorphous oxide layer is a nano-scale amorphous structure, and a surface of the nano-sized mastoid structure is formed on the surface. 4. The coated member according to claim 2, wherein the anti-fingerprint layer is formed by a magnetron sputtering coating method. 5. The coated article of claim w, wherein the substrate is of a metal or a non-metal. 6. A method for preparing a coated member, comprising the steps of: providing a substrate; using a peak as a material to use oxygen as a reactive gas, and (iv) a magnetron-based film method for sputtering an amorphous aluminum oxide layer on a surface of the substrate; Taking Shaogan as a dry material, a gasified amorphous oxide (A10xFy) layer was prepared on the surface of the amorphous oxide layer by magnetic reduction coating method using oxygen and carbon tetrafluoride gas as reaction gases, wherein 〇&lt;x&lt;lt ;1.5,0&lt;y&lt;3. 7. The method for preparing a coated member according to claim 6, wherein the amorphous aluminum oxide layer is deplated to a bias of _15 〇 to _3 〇〇 v, and the sputtering temperature is 1 50-42. (TC, the flow rate of oxygen is 2〇〇_5〇〇sccm, the working gas is argon gas, the flow rate of argon gas is 300-500sccm, the target of aluminum target is 100100101. Form No. A010I Page 12/16 pages 1002000183-0 201229287 frequency power supply control, the power is 5-1 OkW, the sputtering time is 20-60 minutes 〇8. The preparation method of the coated member according to claim 6, wherein the fluorinated amorphous alumina is prepared The layer is set to a bias voltage of -150~-300V for the substrate, the temperature of the money key is 150-420 ° C, the flow rate of oxygen is 50-200 sccm, the gas is used as the working gas, the flow rate of argon gas is 300-500 sccm, and the tetrafluoride The partial pressure of carbon is between 0.45-0. 63Pa, and the aluminum target is controlled by RF power source, the RF power density is 50-1 00W/cm2, and the processing time is 70-120 minutes. ^ 9. As claimed in the sixth item The method for preparing a coated member, wherein the preparation method further comprises: before sputtering an amorphous aluminum oxide layer on a substrate table A method of preparing a transition layer of a metal aluminum according to the invention of claim 9, wherein the preparation method further comprises: pre-cleaning the substrate before the aluminum-plated transition layer is sputtered. And the steps of plasma cleaning. Ο 100100101 Form No. A0101 Page 13 / Total 16 Page 1002000183-0
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CN107768279A (en) * 2016-08-23 2018-03-06 应用材料公司 Method for depositing etch quantity of the fluorine alumina layer with fast quick-recovery in etching chamber
CN113825857A (en) * 2019-05-15 2021-12-21 赛峰集团 Method for forming aluminum oxide layer on surface of metal substrate

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FR2793889B1 (en) * 1999-05-20 2002-06-28 Saint Gobain Vitrage TRANSPARENT SUBSTRATE WITH ANTI-REFLECTIVE COATING
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CN101314854A (en) * 2007-06-01 2008-12-03 中国科学院金属研究所 Cr-O-N active diffusion blocking layer and production method thereof

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CN107768279A (en) * 2016-08-23 2018-03-06 应用材料公司 Method for depositing etch quantity of the fluorine alumina layer with fast quick-recovery in etching chamber
CN113825857A (en) * 2019-05-15 2021-12-21 赛峰集团 Method for forming aluminum oxide layer on surface of metal substrate
CN113825857B (en) * 2019-05-15 2024-03-19 赛峰集团 Method for forming aluminum oxide layer on surface of metal substrate

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