CN107758740B - 一种单分散硫化锑量子点的制备方法 - Google Patents
一种单分散硫化锑量子点的制备方法 Download PDFInfo
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- CN107758740B CN107758740B CN201710841943.0A CN201710841943A CN107758740B CN 107758740 B CN107758740 B CN 107758740B CN 201710841943 A CN201710841943 A CN 201710841943A CN 107758740 B CN107758740 B CN 107758740B
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- antimony trisulfide
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G30/00—Compounds of antimony
- C01G30/008—Sulfides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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- Organic Chemistry (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Inorganic Compounds Of Heavy Metals (AREA)
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CN201710841943.0A CN107758740B (zh) | 2017-09-18 | 2017-09-18 | 一种单分散硫化锑量子点的制备方法 |
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CN201710841943.0A CN107758740B (zh) | 2017-09-18 | 2017-09-18 | 一种单分散硫化锑量子点的制备方法 |
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CN107758740A CN107758740A (zh) | 2018-03-06 |
CN107758740B true CN107758740B (zh) | 2019-04-05 |
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Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101157851B (zh) * | 2007-08-28 | 2010-05-19 | 华中师范大学 | 量子点自组装超级纳米结构材料的制备方法 |
SG192798A1 (en) * | 2011-02-17 | 2013-09-30 | Univ Nanyang Tech | Inorganic nanorods and a method of forming the same, and a photoelectrode and a photovoltaic device comprising the inorganic nanorods |
CN104817104B (zh) * | 2015-04-20 | 2016-11-09 | 河南师范大学 | 一种水溶性硫化铜锌量子点的制备方法 |
CN104876256B (zh) * | 2015-04-20 | 2016-10-12 | 河南师范大学 | 一种水溶性硫化锌量子点的制备方法 |
CN104876257B (zh) * | 2015-04-20 | 2016-11-23 | 河南师范大学 | 一种水溶性硫化镉量子点的制备方法 |
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Address after: 400000, Honghe Avenue, Yongchuan District, Chongqing, 319 Patentee after: CHONGQING University OF ARTS AND SCIENCES Address before: No. 319, Honghe Avenue, Tongliang County, Chongqing Patentee before: CHONGQING University OF ARTS AND SCIENCES |
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Effective date of registration: 20221008 Address after: 4-67, No. 40, Fuyuan Avenue, Yinglong Town, Economic Development Zone, Nan'an District, Chongqing 400000 (ie, the 4th floor of B3) Patentee after: Chongqing Fuyuan New Material Technology Co.,Ltd. Address before: 400000 No. 319, Honghe Avenue, Yongchuan District, Chongqing Patentee before: CHONGQING University OF ARTS AND SCIENCES |
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