CN107532067B - 研磨用组合物 - Google Patents

研磨用组合物 Download PDF

Info

Publication number
CN107532067B
CN107532067B CN201680026870.3A CN201680026870A CN107532067B CN 107532067 B CN107532067 B CN 107532067B CN 201680026870 A CN201680026870 A CN 201680026870A CN 107532067 B CN107532067 B CN 107532067B
Authority
CN
China
Prior art keywords
polishing
polishing composition
polished
composition
respect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680026870.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN107532067A (zh
Inventor
织田博之
高桥修平
森嘉男
高见信一郎
田畑诚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of CN107532067A publication Critical patent/CN107532067A/zh
Application granted granted Critical
Publication of CN107532067B publication Critical patent/CN107532067B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201680026870.3A 2015-05-08 2016-05-02 研磨用组合物 Active CN107532067B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015-095635 2015-05-08
JP2015095635 2015-05-08
PCT/JP2016/063597 WO2016181888A1 (fr) 2015-05-08 2016-05-02 Composition de polissage

Publications (2)

Publication Number Publication Date
CN107532067A CN107532067A (zh) 2018-01-02
CN107532067B true CN107532067B (zh) 2021-02-23

Family

ID=57248149

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680026870.3A Active CN107532067B (zh) 2015-05-08 2016-05-02 研磨用组合物

Country Status (6)

Country Link
EP (1) EP3296376B1 (fr)
JP (1) JP6829191B2 (fr)
KR (1) KR102594932B1 (fr)
CN (1) CN107532067B (fr)
TW (1) TWI719023B (fr)
WO (1) WO2016181888A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102389491B1 (ko) * 2016-12-09 2022-04-22 신에쯔 한도타이 가부시키가이샤 양면연마장치용 캐리어 및 양면연마장치 그리고 양면연마방법
JP6847692B2 (ja) * 2017-02-08 2021-03-24 株式会社フジミインコーポレーテッド 研磨用組成物
JP6879798B2 (ja) * 2017-03-30 2021-06-02 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
WO2019049610A1 (fr) * 2017-09-07 2019-03-14 株式会社フジミインコーポレーテッド Composition de polissage et procédé de polissage de substrat de silicium
JP2020035870A (ja) * 2018-08-29 2020-03-05 株式会社フジミインコーポレーテッド 研磨用組成物
WO2021081145A1 (fr) * 2019-10-22 2021-04-29 Cmc Materials, Inc. Composition et procédé de polissage présentant une sélectivité élevée pour le nitrure de silicium et le polysilicium plutôt que pour l'oxyde de silicium
JP6780800B1 (ja) * 2020-04-09 2020-11-04 信越半導体株式会社 ウェーハの研磨方法及び研磨装置
TWI804925B (zh) * 2020-07-20 2023-06-11 美商Ｃｍｃ材料股份有限公司 矽晶圓拋光組合物及方法
TWI819477B (zh) * 2022-01-26 2023-10-21 臺灣永光化學工業股份有限公司 碳化矽基板研磨液之再生方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1672246A (zh) * 2002-07-22 2005-09-21 清美化学股份有限公司 半导体用研磨剂、该研磨剂的制造方法和研磨方法
CN101597477A (zh) * 2008-06-05 2009-12-09 Jsr株式会社 化学机械研磨用水系分散体、电路基板及其制造方法
CN103403123A (zh) * 2011-01-26 2013-11-20 福吉米株式会社 研磨用组合物、使用其的研磨方法及基板的制造方法
WO2014126051A1 (fr) * 2013-02-13 2014-08-21 株式会社フジミインコーポレーテッド Composition de polissage, procédé de production pour composition de polissage et procédé de production pour article poli

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5990012A (en) * 1998-01-27 1999-11-23 Micron Technology, Inc. Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads
WO2004100242A1 (fr) 2003-05-09 2004-11-18 Sanyo Chemical Industries, Ltd. Liquide de polissage pour polissage mecano-chimique et procede de polissage
KR100558259B1 (ko) * 2003-11-25 2006-03-10 제일모직주식회사 실리콘 웨이퍼 경면연마용 슬러리 조성물
JP2005268667A (ja) 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
KR100636994B1 (ko) * 2004-08-27 2006-10-20 제일모직주식회사 표면이하 결함을 개선하는 실리콘 웨이퍼 경면연마용슬러리 조성물
JP5204960B2 (ja) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP5413456B2 (ja) * 2009-04-20 2014-02-12 日立化成株式会社 半導体基板用研磨液及び半導体基板の研磨方法
JP6005521B2 (ja) 2010-11-08 2016-10-12 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた半導体基板の研磨方法
JP6357296B2 (ja) * 2012-02-10 2018-07-11 株式会社フジミインコーポレーテッド 研磨用組成物、及び半導体基板の製造方法
KR20150014924A (ko) * 2012-04-18 2015-02-09 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JP2014041978A (ja) 2012-08-23 2014-03-06 Fujimi Inc 研磨用組成物、研磨用組成物の製造方法、及び研磨用組成物原液の製造方法
US8961807B2 (en) * 2013-03-15 2015-02-24 Cabot Microelectronics Corporation CMP compositions with low solids content and methods related thereto

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1672246A (zh) * 2002-07-22 2005-09-21 清美化学股份有限公司 半导体用研磨剂、该研磨剂的制造方法和研磨方法
CN101597477A (zh) * 2008-06-05 2009-12-09 Jsr株式会社 化学机械研磨用水系分散体、电路基板及其制造方法
CN103403123A (zh) * 2011-01-26 2013-11-20 福吉米株式会社 研磨用组合物、使用其的研磨方法及基板的制造方法
WO2014126051A1 (fr) * 2013-02-13 2014-08-21 株式会社フジミインコーポレーテッド Composition de polissage, procédé de production pour composition de polissage et procédé de production pour article poli

Also Published As

Publication number Publication date
KR102594932B1 (ko) 2023-10-27
EP3296376A1 (fr) 2018-03-21
CN107532067A (zh) 2018-01-02
WO2016181888A1 (fr) 2016-11-17
JPWO2016181888A1 (ja) 2018-03-01
TW201710462A (zh) 2017-03-16
JP6829191B2 (ja) 2021-02-10
TWI719023B (zh) 2021-02-21
KR20180002629A (ko) 2018-01-08
EP3296376B1 (fr) 2023-07-05
EP3296376A4 (fr) 2018-08-22

Similar Documents

Publication Publication Date Title
CN107532067B (zh) 研磨用组合物
CN107075347B (zh) 研磨用组合物
JP6010043B2 (ja) ポリシリコンの研磨用組成物及び研磨方法
JPH11315273A (ja) 研磨組成物及びそれを用いたエッジポリッシング方法
EP2530706A1 (fr) Procédé de récupération d'une tranche de semi-conducteur et composition de polissage
WO2018088371A1 (fr) Composition de polissage et procédé de polissage de tranche de silicium
KR102574629B1 (ko) 연마 방법 및 조성 조정제
JP2017183359A (ja) シリコン基板の研磨方法および研磨用組成物セット
CN108966673B (zh) 硅基板的研磨方法和研磨用组合物套组
JPWO2019017407A1 (ja) 基板の研磨方法および研磨用組成物セット
JP6482200B2 (ja) 研磨用組成物
JP6829192B2 (ja) 研磨方法
JP7319190B2 (ja) 研磨用組成物
JP7253335B2 (ja) 研磨用組成物、その製造方法および研磨用組成物を用いた研磨方法
CN114450376B (zh) 研磨用组合物
TW202328394A (zh) 研磨用組成物
CN117916858A (zh) 研磨用组合物
TW202328393A (zh) 研磨用組成物

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant