CN107430876B - 高速字线解码器和电平移位器 - Google Patents

高速字线解码器和电平移位器 Download PDF

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Publication number
CN107430876B
CN107430876B CN201680015459.6A CN201680015459A CN107430876B CN 107430876 B CN107430876 B CN 107430876B CN 201680015459 A CN201680015459 A CN 201680015459A CN 107430876 B CN107430876 B CN 107430876B
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China
Prior art keywords
supply voltage
word line
gate
decoded
node
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CN201680015459.6A
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English (en)
Chinese (zh)
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CN107430876A (zh
Inventor
C·郑
P-H·陈
D·李
S·S·尹
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/06—Address interface arrangements, e.g. address buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
CN201680015459.6A 2015-03-16 2016-03-16 高速字线解码器和电平移位器 Active CN107430876B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562133840P 2015-03-16 2015-03-16
US62/133,840 2015-03-16
US15/070,963 2016-03-15
US15/070,963 US9940987B2 (en) 2015-03-16 2016-03-15 High-speed word line decoder and level-shifter
PCT/US2016/022593 WO2016149333A1 (en) 2015-03-16 2016-03-16 High-speed word line decoder and level-shifter

Publications (2)

Publication Number Publication Date
CN107430876A CN107430876A (zh) 2017-12-01
CN107430876B true CN107430876B (zh) 2020-12-11

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CN201680015459.6A Active CN107430876B (zh) 2015-03-16 2016-03-16 高速字线解码器和电平移位器

Country Status (6)

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US (1) US9940987B2 (https=)
EP (1) EP3271919B1 (https=)
JP (1) JP6352552B2 (https=)
KR (1) KR101956615B1 (https=)
CN (1) CN107430876B (https=)
WO (1) WO2016149333A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104811634B (zh) * 2013-12-29 2018-07-31 芯视达系统公司 支持多种电压的紧凑型行解码器
US10037290B1 (en) * 2016-06-02 2018-07-31 Marvell International Ltd. Dual-port memories and input/output circuits for preventing failures corresponding to concurrent accesses of dual-port memory cells
US10109365B2 (en) * 2016-11-28 2018-10-23 Taiwan Semiconductor Manufacturing Company Limited Word line driver
US11114148B1 (en) * 2020-04-16 2021-09-07 Wuxi Petabyte Technologies Co., Ltd. Efficient ferroelectric random-access memory wordline driver, decoder, and related circuits
US11264093B1 (en) 2020-08-25 2022-03-01 Taiwan Semiconductor Manufacturing Company Limited Duo-level word line driver
US12165693B2 (en) * 2021-12-03 2024-12-10 Micron Technology, Inc. Circuitry including a level shifter and logic, configured to receive a power up reset signal, and associated methods, devices, and systems

Citations (3)

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Publication number Priority date Publication date Assignee Title
US6031781A (en) * 1998-12-21 2000-02-29 Mitisubishi Denki Kabushiki Kaisha Semiconductor memory device allowing high-speed activation of internal circuit
WO2013147742A1 (en) * 2012-03-26 2013-10-03 Intel Corporation Methods and systems to selectively boost an operating voltage of, and controls to an 8t bit-cell array and/or other logic blocks
US8971133B1 (en) * 2013-09-26 2015-03-03 Arm Limited Memory device and method of operation of such a memory device

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JP2004334982A (ja) * 2003-05-08 2004-11-25 Nec Electronics Corp 行デコーダ、半導体回路装置
JP4496069B2 (ja) * 2004-12-20 2010-07-07 株式会社東芝 Ｍｏｓ型半導体集積回路装置
US7176725B2 (en) * 2005-02-04 2007-02-13 International Business Machines Corporation Fast pulse powered NOR decode apparatus for semiconductor devices
US7463545B2 (en) 2006-03-17 2008-12-09 Texas Instruments Incorporated System and method for reducing latency in a memory array decoder circuit
JP2008084457A (ja) 2006-09-28 2008-04-10 Toshiba Corp 不揮発性半導体記憶装置
JP2008152845A (ja) * 2006-12-15 2008-07-03 Toshiba Corp 半導体記憶装置
JP4913878B2 (ja) * 2009-05-27 2012-04-11 ルネサスエレクトロニクス株式会社 ワード線選択回路、ロウデコーダ
US8391097B2 (en) 2010-05-25 2013-03-05 Taiwan Semiconductor Manufacturing Co. Ltd. Memory word-line driver having reduced power consumption
KR101753251B1 (ko) 2010-07-23 2017-07-05 삼성전자주식회사 음전압 레벨 쉬프터를 포함하는 스태틱 랜덤 액세스 메모리 장치
US8456946B2 (en) 2010-12-22 2013-06-04 Intel Corporation NAND logic word line selection
US9325314B2 (en) 2012-12-07 2016-04-26 Samsung Electronics Co., Ltd. Integrated circuit including circuits driven in different voltage domains

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031781A (en) * 1998-12-21 2000-02-29 Mitisubishi Denki Kabushiki Kaisha Semiconductor memory device allowing high-speed activation of internal circuit
WO2013147742A1 (en) * 2012-03-26 2013-10-03 Intel Corporation Methods and systems to selectively boost an operating voltage of, and controls to an 8t bit-cell array and/or other logic blocks
US8971133B1 (en) * 2013-09-26 2015-03-03 Arm Limited Memory device and method of operation of such a memory device

Also Published As

Publication number Publication date
EP3271919A1 (en) 2018-01-24
JP6352552B2 (ja) 2018-07-04
CN107430876A (zh) 2017-12-01
KR20170128299A (ko) 2017-11-22
KR101956615B1 (ko) 2019-03-11
US9940987B2 (en) 2018-04-10
US20160276005A1 (en) 2016-09-22
JP2018513520A (ja) 2018-05-24
WO2016149333A1 (en) 2016-09-22
EP3271919B1 (en) 2019-05-01

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