CN107424898B - 等离子体处理装置的清洁方法 - Google Patents
等离子体处理装置的清洁方法 Download PDFInfo
- Publication number
- CN107424898B CN107424898B CN201710358043.0A CN201710358043A CN107424898B CN 107424898 B CN107424898 B CN 107424898B CN 201710358043 A CN201710358043 A CN 201710358043A CN 107424898 B CN107424898 B CN 107424898B
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- Prior art keywords
- chamber
- cleaning
- plasma source
- remote plasma
- radicals
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- 238000004140 cleaning Methods 0.000 title claims abstract description 90
- 238000000034 method Methods 0.000 title claims abstract description 81
- 238000012545 processing Methods 0.000 title claims abstract description 23
- 230000008569 process Effects 0.000 claims abstract description 52
- 150000002500 ions Chemical class 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 18
- 239000007789 gas Substances 0.000 description 18
- 150000003254 radicals Chemical class 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 238000012544 monitoring process Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- -1 fluorine radicals Chemical class 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Optics & Photonics (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1609119.1 | 2016-05-24 | ||
| GBGB1609119.1A GB201609119D0 (en) | 2016-05-24 | 2016-05-24 | A method of cleaning a plasma processing module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107424898A CN107424898A (zh) | 2017-12-01 |
| CN107424898B true CN107424898B (zh) | 2021-03-19 |
Family
ID=56369881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710358043.0A Active CN107424898B (zh) | 2016-05-24 | 2017-05-19 | 等离子体处理装置的清洁方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10309014B2 (enExample) |
| EP (1) | EP3249073A1 (enExample) |
| JP (1) | JP7011403B2 (enExample) |
| KR (1) | KR102185805B1 (enExample) |
| CN (1) | CN107424898B (enExample) |
| GB (1) | GB201609119D0 (enExample) |
| TW (1) | TWI795358B (enExample) |
Families Citing this family (40)
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| US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| CN108300978B (zh) * | 2017-01-12 | 2020-10-09 | 和舰科技(苏州)有限公司 | 一种侦测气相沉积机台清理结束时间点的装置和方法 |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| JP7176860B6 (ja) | 2017-05-17 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 前駆体の流れを改善する半導体処理チャンバ |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| KR102088596B1 (ko) * | 2018-07-09 | 2020-06-01 | 램 리써치 코포레이션 | Rf 플라즈마 생성기 및 리모트 플라즈마 생성기에 공급하는 rf 신호 소스 |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US11721527B2 (en) * | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
| US20200266037A1 (en) * | 2019-02-14 | 2020-08-20 | Advanced Energy Industries, Inc. | Maintenance for remote plasma sources |
| US11264219B2 (en) * | 2019-04-17 | 2022-03-01 | Samsung Electronics Co., Ltd. | Radical monitoring apparatus and plasma apparatus including the monitoring apparatus |
| US11854773B2 (en) * | 2020-03-31 | 2023-12-26 | Applied Materials, Inc. | Remote plasma cleaning of chambers for electronics manufacturing systems |
| TWI748741B (zh) * | 2020-11-11 | 2021-12-01 | 暉盛科技股份有限公司 | 電漿晶圓清潔機及使用其清潔晶圓的方法 |
| KR20220093499A (ko) * | 2020-12-28 | 2022-07-05 | 에스케이스페셜티 주식회사 | F3no 가스를 이용한 반도체 및 디스플레이 화학기상 증착 챔버의 건식 세정 방법 |
| JP7579752B2 (ja) * | 2021-05-27 | 2024-11-08 | 東京エレクトロン株式会社 | クリーニングを制御する方法及びプラズマ処理装置 |
| WO2024107561A1 (en) * | 2022-11-16 | 2024-05-23 | Mks Instruments, Inc. | Radical sensing for process tool diagnostics |
| US20240363317A1 (en) * | 2023-04-25 | 2024-10-31 | Applied Materials, Inc. | Method of plasma cleaning of fused silica tubes |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH08193271A (ja) * | 1995-01-13 | 1996-07-30 | Aneruba Kk | その場クリーニング処理後の予備的処理完了点検出装置および完了点検出法 |
| JPH1022280A (ja) * | 1996-07-08 | 1998-01-23 | Hitachi Ltd | プラズマｃｖｄ装置およびそのクリーニング方法 |
| US6079426A (en) * | 1997-07-02 | 2000-06-27 | Applied Materials, Inc. | Method and apparatus for determining the endpoint in a plasma cleaning process |
| JP3296292B2 (ja) * | 1998-06-26 | 2002-06-24 | 松下電器産業株式会社 | エッチング方法、クリーニング方法、及びプラズマ処理装置 |
| US6543459B1 (en) * | 2000-04-07 | 2003-04-08 | Koninklijke Philips Electronics N.V. | Method of determining an end point for a remote microwave plasma cleaning system |
| JP2002151417A (ja) * | 2000-11-08 | 2002-05-24 | Hitachi Ltd | プラズマｃｖｄ装置 |
| JP2002151475A (ja) * | 2000-11-14 | 2002-05-24 | Toshiba Corp | 薄膜処理モニタリング方法と薄膜処理装置 |
| DE10241590A1 (de) * | 2002-09-05 | 2004-03-18 | Infineon Technologies Ag | Verfahren zur Bestimmung des Endpunktes beim Reinigungsätzen |
| JP2005033173A (ja) * | 2003-06-16 | 2005-02-03 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| KR100710923B1 (ko) * | 2004-06-02 | 2007-04-23 | 동경 엘렉트론 주식회사 | 플라즈마 처리장치 및 임피던스 조정방법 |
| US20060090773A1 (en) * | 2004-11-04 | 2006-05-04 | Applied Materials, Inc. | Sulfur hexafluoride remote plasma source clean |
| TWI355038B (en) * | 2006-10-04 | 2011-12-21 | Macronix Int Co Ltd | Method of monitoring plasma process tool, protecti |
| JP5281766B2 (ja) * | 2007-07-31 | 2013-09-04 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
| KR20100069392A (ko) * | 2008-12-16 | 2010-06-24 | 삼성전자주식회사 | 증착, 식각 혹은 클리닝 공정에서 증착, 식각 혹은 클리닝 종료 시점을 결정하기 위하여 수정 결정 미소저울을 이용하는 반도체 소자의 제조장치 및 이를 이용한 제조방법 |
| US8591659B1 (en) * | 2009-01-16 | 2013-11-26 | Novellus Systems, Inc. | Plasma clean method for deposition chamber |
-
2016
- 2016-05-24 GB GBGB1609119.1A patent/GB201609119D0/en not_active Ceased
-
2017
- 2017-05-09 US US15/590,063 patent/US10309014B2/en active Active
- 2017-05-09 TW TW106115328A patent/TWI795358B/zh active
- 2017-05-19 CN CN201710358043.0A patent/CN107424898B/zh active Active
- 2017-05-23 JP JP2017101388A patent/JP7011403B2/ja active Active
- 2017-05-23 KR KR1020170063644A patent/KR102185805B1/ko active Active
- 2017-05-23 EP EP17172574.0A patent/EP3249073A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR102185805B1 (ko) | 2020-12-02 |
| TW201805079A (zh) | 2018-02-16 |
| EP3249073A1 (en) | 2017-11-29 |
| TWI795358B (zh) | 2023-03-11 |
| US20170342556A1 (en) | 2017-11-30 |
| JP2017212445A (ja) | 2017-11-30 |
| KR20170132685A (ko) | 2017-12-04 |
| CN107424898A (zh) | 2017-12-01 |
| JP7011403B2 (ja) | 2022-01-26 |
| GB201609119D0 (en) | 2016-07-06 |
| US10309014B2 (en) | 2019-06-04 |
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