TWI355038B - Method of monitoring plasma process tool, protecti - Google Patents

Description

1355038 P950038 19839twf.doc/n IX. Description of the invention: [Technology of the jaw region of the invention] The present invention relates to a method for plasma piOCess application, and in particular to an instant monitoring of electricity The method and equipment of the pulping machine. [Prior Art]

The deposition process is already one of the most important processes in semiconductor manufacturing. The layers required for all semiconductor components, whether conductors, semiconductors or dielectrics, can be made by a deposition process. Among them, the so-called "plasma deposition process" has become a resident deposition process such as Auxiliary Chemical Gas Phase Deposition (PECVD) or the current common high-density plasma chemical gas accumulation (although a CVD). Usually, in a plasma deposition chamber (10) (4), by changing the parameters of the electric meter, to obtain different materials, nrj is required to be stable for Wei.

After the production of the parts is completed, it is possible to increase the manufacturing cost by using the existing quantity and the cost of the large (four) process area. Therefore, it is necessary to seek a method and equipment capable of instantly knowing the electric propeller 4M, and it is preferable to: The stability of the domain platform [invention content] (10) its extensive application in the monitoring of electric power processing < This (4) is to provide a kind of monitoring method to instantly detect whether the electric power tool manufacturing machine is frequent. The purpose of the present invention is to provide a method for preventing damage to semiconductor components from 5 135 508 P950038 ^ 9839 twf. doc / i to avoid the problem of plasma damage to semiconductor components. It is still another object of the present invention to provide a method for monitoring the reproducibility and enthalpy of a wafer in a plasma process, which can be monitored by a fresh method (4) for the purpose of monitoring batches of _' or even more wafers for early prevention. The component electrical test before the wafer is shipped (also known as Wafer Ac (^ptance Test, WAT) will encounter problems. σ

Another object of the present invention is to provide a method for monitoring a film deposited by an electric S process, which can immediately detect the quality of the deposited film layer. It is still another object of the present invention to provide a device for monitoring a plasma processing machine that provides instant access to the stability and reproducibility of an electromechanical processing machine for a variety of monitoring operations. The present invention provides a method for monitoring a plasma processing machine, comprising obtaining a spectrum of a compensation layer from a plasma processing machine, and then analyzing the spectrum and analyzing the manner to target a specific or desired wavelength. The function of the spectrum intensity is integrated, and the resulting value is used to determine this.

According to the method for monitoring a plasma processing machine according to an embodiment of the present invention, the above-mentioned spectrum of the obtained layer is used as a ray system detection system (PDS). The method for monitoring a plasma processing machine according to an embodiment of the invention further includes the above-mentioned electric locator machine having an occupational position, so if the spectrum of the measured film layer is abnormal, it is considered to be beyond the ship. set_. Therefore, after the analysis of the light ^, a warning signal will be issued.方法 The method for monitoring the plasma processing machine according to the embodiment of the present invention is made by using the same electric power for the P95003S J9839twf.doc/i. Test, the spectrum of the simple layer of the self-electrical, and then compare the abnormal spectrum of each wafer with each test word, the towel has an abnormal spectrum of the measured table to find out the abnormal temperature of the wafer during the period The damage is not in the above-mentioned electro-violet process component = = semiconductor element uses electricity _ _, system. The method of listening to the layered spectrum is to describe the process of the semiconductor process. The method of 'the upper-level pulp-making money station including the high-density electric machine is also proposed. - The decision is made when the process machine is turned on and cleaned. H includes the vacuum of the s private machine from an electric pick-up machine at regular intervals. The spectrum of the inner wall of the chamber is determined by the weakening of the spectral intensity of the obtained spectrum, and the open chamber cleaning time point of the plasma processing machine is determined. According to the method for determining the time point of starting and cleaning the plasma processing machine according to the embodiment of the present invention, the method for obtaining the spectrum of the inner wall of the vacuum chamber of the plasma processing machine is to use a plasma detecting system. According to an embodiment of the present invention, a method for determining a time point of starting and cleaning a plasma processing machine, wherein the plasma processing machine comprises a high density plasma machine. The invention further provides an apparatus for monitoring a plasma processing machine, comprising a plasma detecting system and an analyzing device, wherein the plasma detecting system is used for obtaining a film to be tested from a plasma processing machine. The spectrum of the layer, and the analysis device receives and analyzes the spectrum from the plasma detection system to determine if the film 1355038 P950038 19839twf.doc/n is abnormal. According to the device of the embodiment of the invention, the plasma detecting system includes at least one broadband spectrum controller and an optical fiber, wherein the optical fiber is used to transmit the spectral signal of the measured film layer to the above broadband spectral control. Device. According to the apparatus of the embodiment of the invention, the analysis device comprises a computer.

In accordance with various embodiments of the present invention, the plasma processing machine includes a high density plasma (HDP) machine. The invention has the advantages that the spectrum of the tested film layer can be obtained in the plasma processing machine in real time, so as to improve the process stability by using the method of monitoring and controlling the spectrum, and the spectrum can be made into features and indicators to monitor the process. Parameters and reproduction! • It is even possible to measure whether the characteristics of the deposited film layer are changed by the spectral intensity. The above and other objects, features, and advantages of the present invention will become more apparent and understood <RTIgt; [Embodiment]

A block diagram of the equipment used to monitor the plasma processing machine in the slap, the poor, the poorest. Referring to FIG. 1 'the first embodiment of the apparatus for monitoring the plasma processing machine, the plasma detecting system (9) asma detect system 'PDS) 110 and the analysing 12G' where the electric radiation detecting system 11 ( ) is to use the spectrum of the tested film layer, especially in the test film i can be directly measured in the electric destruction process machine 100, so the instant chat data. The analysis package will receive and analyze the spectrum from the P950038 19839t\vf.doc/n slurry detection system 110; for example, it can be used to determine whether the coffee layer conforms to the standard.

Referring to Figure 1, the analyzing device 120 includes a computer, and the plasma processing machine includes a high-density plasma gamma kelly machine or other machine with plasma as a source of operation. When the analyzing device (3) determines that the film layer to be measured is abnormal, the parameter of the adjusting device can be used to perform the weighting. Alternatively, the analysis device 120 e may be pre-set in a range according to the limitation of the plasma processing machine. Therefore, when the spectrum acquired by the plasma detecting system exceeds the above preset range, the analyzing device 12 will issue a warning. Since the first embodiment of the present invention can collect broadband spectral data instantaneously by an optical fiber and analyze the above data by an analyzing device, it can be used as a tool for controlling the stability of the plasma process. While the above apparatus according to the present invention can be applied to various monitoring methods, several embodiments will be described below, but the scope of application of the present invention is not limited thereto. Figure 2 is a diagram showing the steps of monitoring a plasma processing machine in accordance with a second embodiment of the present invention. Referring to FIG. 2, step 2〇〇 is performed to obtain a spectrum of a 1355038 P950038 19839 twf.doc/n film layer from a plasma processing machine, wherein the plasma processing machine can include a high-density plasma machine The method of obtaining the spectrum of the film to be tested is, for example, a plasma measurement system (PDS). &apos; Then, step 210 is performed to analyze the spectrum, and the analysis method integrates the spectral intensity function for the characteristic or desired wavelength interval, and determines whether the spectrum is abnormal by the obtained value. If it is determined that the spectrum is not abnormal, the monitoring step can be completed.

Conversely, if it is determined that the spectrum is abnormal, step 220 'adjusting the parameters of the plasma processing machine (4) may be selected to perform correction; or the plasma processing machine has preset a limited range, so if it is tested If the spectrum of the layer is judged to be different from the above, it is considered to be outside the above-defined range. Therefore, in step 230, a warning signal is issued. Fig. 3 is a view showing a step of preventing damage of a semiconductor element in accordance with a third embodiment of the present invention.

Referring to FIG. 3, step 3〇〇 is firstly provided to provide a plurality of film layers which are respectively fabricated by using different plasma processes in the same plasma processing machine, and the film layers are the same material, but the proportion of the elements contained therein is slightly There are differences in which the electric t-process machine can include a density plasma machine. For example, such a film layer may be a layer of various materials in a semiconductor element, such as an oxide layer as an ageing layer or a material layer such as a nitride layer. Then, step 310 is performed to obtain spectra of the respective film layers from the plasma processing machine. The method for obtaining the spectra of the respective film layers is, for example, a plasma detecting system. 7 Next, proceed to step 320 to analyze the spectrum of each film layer, and analyze 12 1355038 P950038 19839twf.doc/n mode to compare the spectral intensities of short wavelength intervals (such as UV light wavelength interval) to determine each film layer A selected spectrum of lower spectral intensities in the spectrum, and preferably the selected spectrum is one in which the spectrum of each layer has the lowest spectral intensity in the short wavelength range. For example, a common gate oxide layer of a general semiconductor device has been known to affect the device performance due to the problem of piasma damage when the electron energy is greater than 3.2 eV, so that it is calculated at the wavelength ( The spectral intensity at a code of λ) of about 400 nm has a significant effect on the gate oxide layer, so a wavelength of about 400 nm can be used as a basis for selection. Subsequent 'step 330' is used to fabricate a film of the material using a plasma process corresponding to the selected spectrum. In this way, the desired film layer can be fabricated by avoiding the use of a plasma process that causes the spectral intensity of the erbium. Therefore, it is possible to avoid and monitor the abnormal electrode process which would damage the component, thereby preventing the semiconductor device from being damaged by the plasma. In addition, the third embodiment of the present invention may first select some of the plasma deposition process parameters as a reference according to the existing standards and select the lowest plasma damage as a process parameter in the manner of this embodiment. Thus, the method of the present invention can be used as a means of determining plasma process parameters to avoid plasma damage under existing architectures that select or determine process parameters to complement the deficiencies of the prior art. Fig. 4 is a timing chart showing the reproducibility and stability of a wafer in a plasma process in accordance with a fourth embodiment of the present invention. Please refer to Figure 4, first step 4, to obtain the spectrum of a batch of wafers from an electric destroying machine. The plasma processing machine can include a high-density plasma machine, and the so-called "package of wafers" is also This includes the wafers obtained by executing the same program. And 13 1355038 P950038 19839twf.doc/n to obtain the entire batch; the method of the spectrum is, for example, the use of a plasma detection system. Then, step 410 is performed to compare the spectra of the batch of wafers to monitor the stability and repeatabiiity of the batch of b-sheets. And 'Comparing the spectrum side of the whole batch of wafers~, first select _ to make the thinness, and then compare the spectral intensity of each wafer in the whole batch of wafers within this wavelength. ^ If there is an abnormality in the spectrum of the batch of wafers The spectrum can be analyzed individually by the usual spectrum to improve and find out and solve the deviation problem in a short time ((10) tendon 5 coffee). Figure 5 is a flow chart showing the monitoring of a film deposited by a plasma process in accordance with a fifth embodiment of the present invention. Referring to FIG. 5, step 500 is first performed to provide a standard film layer, wherein the standard film layer has, for example, a limited range of reflectance, riding rate (revive mdex, abbreviated as Μ also referred to as n value), extinction coefficient (four) (6) touch c 〇 effic (four), also known as k value) or other can be used as a secret value. However, these numerical values as standards can be obtained by the techniques known to those skilled in the art of the present invention, and therefore will not be described herein. ~

Then, step 510 is performed to obtain the spectrum of the standard film layer, so that the spectral intensity can be known. The above method for obtaining the spectrum of the standard film layer. After the plasma detecting system is used, the step 520' is performed in a plasma processing machine to perform a polymerization process to deposit a layer of the layer. Its towel electric lag electro-convergence machine. Next, proceeding to step 530, the measured spectrum is taken from the plasma processing machine. The method is, for example, the use of an electrical (four) measuring system. Then, step W is performed, and the spectrum of the film layer to be tested is compared with the standard film 14 to determine whether the film layer is in compliance with the standard, and the determination method is, for example, a two-layer layer. The difference between the spectral intensity and the spectral intensity of the fresh film layer. If 曰, not large, then it can be determined that the tested film layer meets the standard and the monitoring step is completed. However, if the spectral intensity of the _ layer is equal to the spectral intensity of the fresh film layer, then it can be determined that the _ layer does not conform to the standard spectrum. For example, the reflectivity or n value of the film to be tested can be inferred. At least one of the values has exceeded the above limit. Next, steps will be taken to alert the staff to adjust the parameters of the plasma process to obtain the standard surface layer; or to remove the film to be tested for heavy work. As described above, the fifth embodiment of the present invention can know whether or not the deposited film layer is within the limits of these numerical values as a standard value without performing individual detection for values such as reflectance, n value, and k value. . 6A to 6C below are spectra and graphs for confirming the feasibility of the fifth embodiment of the present invention. Please refer to ® 6A, where the spectrum is taken from the SiH4 flow as the electropolymer process variable and combined with the fixed plasma process parameters. The tim, TD2, TD3 and TD4 represent different SiH4 flows, respectively % _, 1〇3 seem, 113 seem, 123 seem; and the above fixed plasma process parameters are...

〇2 &quot;il is 155 seem, Ar flow is 390 seem, LF is 3500 Hz, HF is 2650 Hz ' DT=78s. As can be seen from the figure, when the gas ratio of SiH4/〇2 is raised from 0.6 to 0.8, the intensity of the spectrum changes significantly at a wavelength of 305.8 rnn. Moreover, the spectral intensity of the wavelength greater than 654 nm is not shown here for simplicity of explanation, but the spectral intensity of the process is also significantly changed in several specific wavelengths greater than 654 nm, so the so-called spectral wavelength of the present invention can be substantially 1355038 P950038. 19839twf.doc/n Contains UV light to visible light (all spectral ranges). And from Figure 6B shows the ratio from different gases,

The film characteristics of the rate (RI, also known as η value) and the extinction coefficient (k value). The two figures Z Τ〇 2, TM TM have changed. As for the k value, also

At TM has changed. In summary, the difference between the median and the k-value of the spectral intensity will be reflected in the i^m6c at a specific wavelength. 'Tm can be selected as the bottom line buckle, and the spectral peak obtained according to TD1~TD4 at the wavelength 胤15 T_^=nsitydifference) as the spectral intensity, to monitor the change of the i-P value. If the spectral intensity changes, the quality of the film can be known. The error is corrected by modifying the process parameter ratio to reach the target (RI, k). According to the sixth embodiment of the present invention, the figure 遭受 遭受 遭受 遭受 。 。 。 。 。 。 。 。 。 。 。 。 。 The first step is to first provide a plurality of wafers, each of which is a layer of the film to be tested, wherein the layer to be tested is produced by the same electropolymerization process.

It is a south density plasma machine. % of the case J took the step 710 ' to obtain the text on each wafer from the power finder machine: the method of f, for example, using the electric system. Abnormal ====The spectrum of each film layer to be measured, in order to obtain electro-polymerization from the decision of the seventh embodiment of the above-mentioned B-layer 1355038 19839twf.doc/i P950038 Machine = Step diagram of the time point for starting cleaning. ^^, Figure 8 ‘First step _, every time – self-powered? The spectrum of the inner wall of the vacuum chamber of the processing machine, wherein the density is obtained by using electricity _ then the system 'and the electric machine manufacturing machine can then proceed to step 810, according to the above-mentioned time: light master, salty Weak situation 'Determines the start-up of the electro-mechanical process machine (in between the materials. Because the Wei-making money is really the same, the inner wall is shipped with the Yu ^ ^ ^ increase when the tired thief exists in the vacuum chamber (4) the deposition film will be more 'Two t can be obtained by taking the spectrum of the inner wall of the vacuum chamber to control when it will be the whole machine. Open for a thorough cleaning to completely clear the remaining Shen Wei. The device and method of the present invention are described above. The invention has the following features: 1. The invention can obtain spectral data in real time, and then analyze the above number to control the stability of the plasma process. 2. The invention can successfully establish a method for monitoring the broadband spectrum from the Lai process. The method can avoid and monitor the abnormal electro-polymerization process of the damaged component, and identify and improve the plasma damage. 7 Clothes 3. The invention can be applied to the monitoring of the plasma process of a large number of wafers and is monitored from the spectrum inspection of the electrical assembly process. Process Lai, Finding and resolving the deviation problem in the office can prevent the problems encountered by WAT early. 4. The invention can use the variation to monitor and control the parameters of the film deposited by the plasma process. (such as reflectivity, n value and k value, etc.), 'water' The invention can be used to detect abnormal wafer temperature during the plasma process. 17 1^55038 P950038 I9839twf.doc/n 6. The invention is still acceptable It is used to determine the point at which the plasma processing machine is turned on and cleaned to predict when it should be cleaned. Although the invention has been disclosed in detail, such as ±, Cai _ to limit the hair of the technical field Those who have the usual knowledge, in the scope of the invention and the scope of the invention, may make some changes and refinements, and therefore the protection of the present invention is defined by the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a block diagram of a device for monitoring a plasma processing machine in accordance with a first embodiment of the present invention. Fig. 2 is a view showing a step of monitoring a polymerization process machine in accordance with a second embodiment of the present invention. Figure 3 is in accordance with the present invention. A step of preventing the semiconductor element from being damaged in the third embodiment. Fig. 4 is a view showing a step of monitoring the reproducibility and stability of the wafer in the plasma process in accordance with the fourth embodiment of the present invention. A step of monitoring a film layer of a plasma process condition according to a fifth embodiment of the present invention. Solid 6A to FIG. 6C are spectra and graphs respectively for confirming the feasibility of the fifth embodiment of the present invention. Figure 7 is a view showing a step of monitoring whether a semiconductor element is subjected to damage during an electric-disruption process in accordance with a sixth embodiment of the present invention. Figure 8 is a diagram showing a decision to carry out a plasma process machine in accordance with a seventh embodiment of the present invention. Step diagram of the time when the machine is turned on and cleaned. [Main component symbol description] 18 1355038 P950038 19839twf.doc/n 10 : Equipment for monitoring the plasma processing machine 100 : Plasma processing machine 110 : Plasma detection system 120: Analysis apparatus 200 to 230, 300 to 330, 400 to 410, 500 to 550, 700 to 720, 800 to 810: steps

Claims (1)

1355038 X. Patent application scope 1. A method for monitoring the electro-polymerization process machine, including: using - electric hybrid system, obtaining a spectrum of the measured film layer from the - touch machine, and analyzing the spectrum 'And the analysis method is to integrate the spectral intensity function of the S-pair-silver wavelength interval, and determine whether the spectrum is abnormal by the obtained value. 2. For the method of monitoring the wire machine mentioned in Item 1 of the patent application, the method further includes: The electro-polymerization process machine has been preset to a limited range, and if the spectrum of the film to be tested is judged to be abnormal, it is considered to be outside the limited range; and a warning dream is issued after analyzing the spectrum. 3. If the method of monitoring the electric ray weaving table of the first retire is applied, the analysis of the spectrum further includes: adjusting the parameter of the electro-grinding machine 0 4. The method of monitoring a polymerization process machine as described in the scope of the patent application, wherein the plasma processing machine comprises a high plasma (HDP) machine. 5. A method for preventing damage to a semiconductor component, comprising: providing a plurality of film layers respectively fabricated in different plasma processes in the same plasma processing machine, the film layers being of the same material but containing therein The ratio of the primes is slightly different; 'Using an electric music picking system' to obtain the spectrum of each layer from the 5th electro-polymerization process machine; ~ 'The spectrum of each layer is analyzed and the analysis method is for uv Light wave 20 1355038 .100-3-1 , -LC.; The spectral intensity of the long interval is compared to determine a selected spectrum, and the light selected for each of the layers has a lower spectral intensity; A film layer of the material is fabricated corresponding to the plasma process of the selected spectrum. 6. The method of preventing damage to a semiconductor device according to claim 5, wherein the selected spectrum is one having the lowest beneficial intensity in a spectrum of each of the layers. 7. The method of preventing a semiconductor component from damaging -Φα as recited in claim 5, wherein the plasma processing machine comprises a high density plasma machine. 8. A method for determining the time at which the plasma processing machine is turned on and cleaned, comprising: obtaining the spectrum of the inner wall of the vacuum chamber of the electrophoretic processing machine from the electro-polymerization processing machine at intervals of time; The weakening of the spectral intensity in the obtained spectrum determines the startup time of the plasma processing machine. 9. The method of determining the time point of cleaning the electro-mechanical processing machine j machine according to the method specified in item 8 of the patent application, wherein the method for obtaining the spectrum of the inner wall of the vacuum chamber of the electric beam processing machine is to use electricity (10) system.地〇1: The method of determining the time point of the electro-polymerization machine step ^ as described in claim 8 of the patent application, wherein the (four) process machine comprises a high-density plasma machine. 11. A device for monitoring a plasma processing machine, comprising: a plasma detection system for obtaining a spectrum of a measured film layer from a plasma processing machine; and a y-knife setting, receiving and The light 21 1355038 .100-3-1 I complementary spectrum from the plasma detection system is analyzed to determine if the film layer being tested is abnormal. 12. The device for monitoring a plasma processing machine according to claim 11, wherein the plasma detecting system comprises at least: a broadband spectrum controller; and an optical fiber for The spectral signal of the tested film layer is transmitted to the broadband spectral controller. 13. The apparatus for monitoring a plasma processing machine according to claim 11, wherein the plasma processing machine comprises a high density plasma machine. 14. The apparatus for monitoring a plasma processing machine according to claim 11, wherein the analyzing device comprises a computer. 22 1355038 % 'year &quot; month 2 repair (more) replacement page 9B 12 0B 目ηΓοοοε -1 00SI sll_. ^QH_ · _&lt;3 _ · _ εαι—— ^QH 1 I —Αν--- LQi-B— ZVV ^ letter [ 00CH