WO2010024489A1 - Leakage detecting method of process chamber - Google Patents

Leakage detecting method of process chamber Download PDF

Info

Publication number
WO2010024489A1
WO2010024489A1 PCT/KR2008/005381 KR2008005381W WO2010024489A1 WO 2010024489 A1 WO2010024489 A1 WO 2010024489A1 KR 2008005381 W KR2008005381 W KR 2008005381W WO 2010024489 A1 WO2010024489 A1 WO 2010024489A1
Authority
WO
WIPO (PCT)
Prior art keywords
spec
leakage
detecting method
fault
warning
Prior art date
Application number
PCT/KR2008/005381
Other languages
French (fr)
Inventor
Soon-Jong Lee
Bong-Joo Woo
Hak-Kwon Kim
Tae-Dong Kim
Original Assignee
Semisysco Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semisysco Co., Ltd. filed Critical Semisysco Co., Ltd.
Priority to CN2008800077909A priority Critical patent/CN101790782B/en
Publication of WO2010024489A1 publication Critical patent/WO2010024489A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M3/00—Investigating fluid-tightness of structures
    • G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum

Definitions

  • the present invention relates to a leakage detecting method, and more specifically, to a leakage detecting method of a process chamber, which can accurately and quickly detect whether or not leakage occurs when detecting leakage of a specific use process chamber using an optical emission spectrometry (OES) method or smart HMS.
  • OES optical emission spectrometry
  • CCP capacitively coupled plasma
  • ICP inductively coupled plasma
  • MERIE magnetically enhanced reactive ion etching
  • ECR electron cyclotron resonance
  • reaction gas is supplied to a process chamber which provides a closed space in which the etching process is performed. Then, RF power is applied to upper and lower electrodes which are installed so as to be spaced a predetermined distance from each other inside the process chamber, thereby forming an electric field.
  • reaction gas is activated by the electric field so as to be changed into plasma.
  • Ions in a plasma state react with a thin film on a wafer positioned at the lower electrode such that the thin film on the wafer is etched into a desired shape.
  • a semiconductor manufacturing device using plasma needs to monitor and control the plasma process in real time such that the plasma process can be performed in a desired manner.
  • a dry cleaning process similar to the etching process is performed so as to remove the polymer which occurs in the process chamber after a predetermined quantity of films is deposited in the process chamber.
  • an etching end point needs to be detected by an end point detector such that a worn-out state of parts used in the process chamber, the consumption of reaction gas, and productivity are enhanced.
  • the spec range of the leakage detection by the OES should be larger than the distribution. Accordingly, minute leakage is not detected by the OES.
  • the present invention is directed to a leakage detecting method of a process chamber, which can accurately and quickly detect whether or not leakage occurs in the process chamber, without an error, by setting the spec range of leakage detection having an effect upon leakage after PM is performed for a predetermined period or time until plasma is stabilized, considering that the states of parts significantly change before and after the PM is performed in a semiconductor manufacturing process.
  • a leakage detecting method of a process chamber which prevents an error in which leakage is detected even when leakage has not occurred in a case in which the states of parts significantly change when preventive maintenance (PM) is repeatedly performed for a predetermined time such that defective factors of the process chamber during a process of manufacturing semiconductor are reduced.
  • PM preventive maintenance
  • the leakage detecting method comprises: a first step of setting a warning spec, a fault spec, and a PM spec, which are expanded into predetermined ranges on the basis of an eigen value which is arbitrarily set during the semiconductor manufacturing process before the PM is performed; a second step of judging whether or not leakage occurs, based on the ranges of the warning spec, the fault spec, and the PM spec which are set in the first step; a third step of resetting the warning spec and the fault spec to a predetermined range on the basis of an eigen value which is automatically reset during the semiconductor manufacturing process after the PR is performed; and a fourth step of judging whether or not leakage occurs, based on the ranges of the warning spec and the fault spec which are set in the third step.
  • the eigen value which is arbitrarily set in the first step may be obtained by searching for effective wavelength bands having an effect upon leakage in light emissions of plasmas from several sampling glasses introduced at the initial stage of system operation for the semiconductor manufacturing process and calculating an area by integrating intensities in the wavelength bands or calculating the intensity of a peak.
  • the warning spec set in the first step may be set in the range of ⁇ 5-7% on the basis of the eigen value set in the first step.
  • the fault spec set in the first step may be set in the range of 12-15% on the basis of the eigen value set in the first step.
  • the PM spec of the first step may be applied at start and end points of the PM and for a predetermined period or time which lapses until plasma is stabilized from operation of a semiconductor manufacturing system for a new process.
  • the PM spec may be set in the range of ⁇ 15-20% on the basis of the eigen value set in the first step.
  • the eigen value which is automatically reset in the third step may be obtained by automatically analyzing and averaging light emissions of plasmas from several sampling glasses introduced when a system operation for the semiconductor manufacturing process is performed by stabilizing the plasmas.
  • the warning spec reset in the third step may be set in the range of ⁇ 5-7% on the basis of the reset eigen value.
  • the fault spec reset in the third step may be set in the range of ⁇ 12-15% on the basis of the reset eigen value.
  • the second and fourth steps may include: when data is not input within a predetermined time in a state in which the semiconductor manufacturing process is being performed, recognizing the state as a run down, when data is input in a state where the run down is recognized, ignoring the warning spec, and only when a change deviates from the range of the fault spec, judging that leakage occurred and generating an alarm.
  • the ranges of the warning spec, the fault spec, and the PM spec for leakage detection having an effect upon leakage after the PM is performed are expanded for a predetermined period or time until plasma is stabilized, considering that the states of parts significantly change before and after the PM is performed. Therefore, it is possible to accurately and quickly judge whether or not leakage occurs in the process chamber and to detect minute leakage.
  • FIG. 1 is a diagram showing a leakage detection pattern in a process chamber according to an example embodiment of the present invention.
  • FIG. 1 is a diagram showing a leakage detection pattern in a process chamber according to an example embodiment of the present invention.
  • the leakage detecting method of a process chamber according to the example embodiment of the present invention is performed so as to prevent such a detection error, and includes first to fourth steps.
  • the first step includes a process of searching for effective wavelength bands having an effect upon leakage in light emissions of plasmas from several sampling glasses introduced at the initial stage of system operation and calculating an area by integrating intensities in the wavelength bands or calculating the intensity of a peak, and thereby extracting and setting an eigen value, and a process of setting a warning spec, a fault spec, and a PM spec which are expanded in predetermined ranges on the basis of the set eigen value, in a semiconductor manufacturing process before the PM is performed.
  • the warning spec may be set in the range of ⁇ 5-7% on the basis of the set eigen value, and the fault spec may be set in the range of ⁇ 12-15% on the basis of the set eigen value.
  • the PM spec is applied at start and end points of the PM and for a predetermined period (for example, a point of time when a 300th glass is introduced) which lapses until plasma is stabilized from the operation of a semiconductor manufacturing system for a new process or a predetermined period of time (for example, two days).
  • the PM spec may be set in the range of ⁇ 15-20% on the basis of the set eigen value.
  • the second step includes a process of judging whether or not leakage occurs, based on the ranges of the warning spec, the fault spec, and the PM spec which are set in the first step.
  • the leakage detector judges that leakage has not occurred in the process chamber.
  • the leakage detector recognizes it as run down.
  • the leakage detector ignores the warning spec of ⁇ 5-7%, and generates an alarm only when the change deviates from the range ( ⁇ 12-15%) of the fault spec.
  • the third step includes a process of resetting the warning spec and the fault spec on the basis of an eigen value which is automatically reset during the semiconductor manufacturing process after the PM is performed.
  • the warning spec may be set in the range of ⁇ 5-7% on the basis of the reset eigen value, and the fault spec may be set in the range of ⁇ 12-15% on the basis of the reset eigen value.
  • the fourth step includes a process of judging whether or not leakage occurs based on the ranges of the warning spec and the fault spec which are set in the third step.
  • the leakage detector judges that leakage has not occurred in the process chamber.
  • the leakage detector recognizes it as run down.
  • the leakage detector ignores the warning spec of ⁇ 5-7%, and generates an alarm only when the change deviates from the range (+ 12-15%) of the fault spec.
  • the ranges of the warning spec, the fault spec, and the PM spec for leakage detection are expanded on the basis of the set eigen value, and the changes of the parts after the PM are considered so as to prevent an error in which leakage is detected even though leakage has not occurred.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

Provided is a leakage detecting method of a process chamber, in which the ranges of a warning spec, a fault spec, and a PM spec for leakage detection having an effect upon leakage after PM is performed are expanded for a predetermined period or time until plasma is stabilized, considering that the states of parts significantly change before and after the PM is performed. Therefore, it is possible to accurately and quickly judge whether or not leakage occurs in a process chamber and to detect minute leakage.

Description

Description LEAKAGE DETECTING METHOD OF PROCESS CHAMBER
Technical Field
[1] The present invention relates to a leakage detecting method, and more specifically, to a leakage detecting method of a process chamber, which can accurately and quickly detect whether or not leakage occurs when detecting leakage of a specific use process chamber using an optical emission spectrometry (OES) method or smart HMS. Background Art
[2] Semiconductor manufacturing processes using plasma can be roughly divided into dry etching processes, chemical vapor deposition processes, and sputtering processes.
[3] Semiconductor manufacturing devices using plasma are divided into a capacitively coupled plasma (CCP) type which generates plasma by applying radio frequency (RF) power between parallel plates facing each other depending on the construction of electrodes generating plasma, an inductively coupled plasma (ICP) type which generates plasma by applying RF power to a coil outside a reaction tube, a magnetically enhanced reactive ion etching (MERIE) type which generates plasma by coupling RF power and a magnetic field, and an electron cyclotron resonance (ECR) type which generates plasma by coupling microwaves and a magnetic field.
[4] In the dry etching process using plasma, reaction gas is supplied to a process chamber which provides a closed space in which the etching process is performed. Then, RF power is applied to upper and lower electrodes which are installed so as to be spaced a predetermined distance from each other inside the process chamber, thereby forming an electric field.
[5] The reaction gas is activated by the electric field so as to be changed into plasma.
Ions in a plasma state react with a thin film on a wafer positioned at the lower electrode such that the thin film on the wafer is etched into a desired shape.
[6] In this case, a semiconductor manufacturing device using plasma needs to monitor and control the plasma process in real time such that the plasma process can be performed in a desired manner.
[7] That is, a large quantity of reaction by-products is generated in the plasma etching process and the plasma CVD process, which then react with the reaction gas or photoresist, thereby generating polymer. Since the polymer adheres to the surface of a glass or the inner walls of the process chamber, process parameters may vary, and particles may occur. Accordingly, they serve as defective factors of the glass during the semiconductor manufacturing process, thereby causing a reduction in yield.
[8] Therefore, in order to reduce such defective factors, preventive maintenance (PM) of the process chamber is repeatedly performed for a predetermined time.
[9] At this time, a dry cleaning process similar to the etching process is performed so as to remove the polymer which occurs in the process chamber after a predetermined quantity of films is deposited in the process chamber. In the dry cleaning process, an etching end point needs to be detected by an end point detector such that a worn-out state of parts used in the process chamber, the consumption of reaction gas, and productivity are enhanced.
[10] However, when the plasma is analyzed by the OES before and after the PM in the process chamber and leakage is detected from the analysis, the precision of the detection decreases, and the etching end point in the cleaning process is difficult to detect.
[11] That is, since the states of the parts significantly change as the PM for the process chamber is performed, the plasma considerably differs from before the PM is performed, even when leakage has not occurred. In this case, an error in which it is detected that leakage is present may occur.
[12] Further, as the dry cleaning process is performed periodically or non-periodically, the distribution of plasmas occurs. In this case, the spec range of the leakage detection by the OES should be larger than the distribution. Accordingly, minute leakage is not detected by the OES.
[13] Further, when the run down occurs, changes in the temperature and amount of residual gas of the process chamber occur, compared with when runs are consecutively performed. The distribution of plasma of glasses which are processed immediately after the run down slightly increases in comparison with a general case. When the distribution slightly increases, the spec range of the leakage detection cannot be managed with precision.
[14]
Disclosure of Invention Technical Problem
[15] The present invention is directed to a leakage detecting method of a process chamber, which can accurately and quickly detect whether or not leakage occurs in the process chamber, without an error, by setting the spec range of leakage detection having an effect upon leakage after PM is performed for a predetermined period or time until plasma is stabilized, considering that the states of parts significantly change before and after the PM is performed in a semiconductor manufacturing process.
[16]
Technical Solution
[17] According to an aspect of the present invention, there is provided a leakage detecting method of a process chamber, which prevents an error in which leakage is detected even when leakage has not occurred in a case in which the states of parts significantly change when preventive maintenance (PM) is repeatedly performed for a predetermined time such that defective factors of the process chamber during a process of manufacturing semiconductor are reduced. The leakage detecting method comprises: a first step of setting a warning spec, a fault spec, and a PM spec, which are expanded into predetermined ranges on the basis of an eigen value which is arbitrarily set during the semiconductor manufacturing process before the PM is performed; a second step of judging whether or not leakage occurs, based on the ranges of the warning spec, the fault spec, and the PM spec which are set in the first step; a third step of resetting the warning spec and the fault spec to a predetermined range on the basis of an eigen value which is automatically reset during the semiconductor manufacturing process after the PR is performed; and a fourth step of judging whether or not leakage occurs, based on the ranges of the warning spec and the fault spec which are set in the third step.
[18] The eigen value which is arbitrarily set in the first step may be obtained by searching for effective wavelength bands having an effect upon leakage in light emissions of plasmas from several sampling glasses introduced at the initial stage of system operation for the semiconductor manufacturing process and calculating an area by integrating intensities in the wavelength bands or calculating the intensity of a peak.
[19] The warning spec set in the first step may be set in the range of ± 5-7% on the basis of the eigen value set in the first step.
[20] The fault spec set in the first step may be set in the range of 12-15% on the basis of the eigen value set in the first step.
[21] The PM spec of the first step may be applied at start and end points of the PM and for a predetermined period or time which lapses until plasma is stabilized from operation of a semiconductor manufacturing system for a new process.
[22] The PM spec may be set in the range of ± 15-20% on the basis of the eigen value set in the first step.
[23] The eigen value which is automatically reset in the third step may be obtained by automatically analyzing and averaging light emissions of plasmas from several sampling glasses introduced when a system operation for the semiconductor manufacturing process is performed by stabilizing the plasmas.
[24] The warning spec reset in the third step may be set in the range of ± 5-7% on the basis of the reset eigen value.
[25] The fault spec reset in the third step may be set in the range of ± 12-15% on the basis of the reset eigen value.
[26] The second and fourth steps may include: when data is not input within a predetermined time in a state in which the semiconductor manufacturing process is being performed, recognizing the state as a run down, when data is input in a state where the run down is recognized, ignoring the warning spec, and only when a change deviates from the range of the fault spec, judging that leakage occurred and generating an alarm.
Advantageous Effects
[27] According to the present invention, the ranges of the warning spec, the fault spec, and the PM spec for leakage detection having an effect upon leakage after the PM is performed are expanded for a predetermined period or time until plasma is stabilized, considering that the states of parts significantly change before and after the PM is performed. Therefore, it is possible to accurately and quickly judge whether or not leakage occurs in the process chamber and to detect minute leakage.
[28]
Brief Description of the Drawings
[29] FIG. 1 is a diagram showing a leakage detection pattern in a process chamber according to an example embodiment of the present invention.
[30]
Best Mode for Carrying Out the Invention
[31] Hereinafter, an example embodiment of the present invention will be described with reference to the accompanying drawing.
[32] FIG. 1 is a diagram showing a leakage detection pattern in a process chamber according to an example embodiment of the present invention.
[33] Referring to FIG. 1, when preventive maintenance (PM) is repeatedly performed for a predetermined time such that defective factors of a process chamber during a semiconductor manufacturing process are reduced, the states of parts may change significantly. In this case, even when leakage has not occurred, leakage may be detected. The leakage detecting method of a process chamber according to the example embodiment of the present invention is performed so as to prevent such a detection error, and includes first to fourth steps.
[34] The first step includes a process of searching for effective wavelength bands having an effect upon leakage in light emissions of plasmas from several sampling glasses introduced at the initial stage of system operation and calculating an area by integrating intensities in the wavelength bands or calculating the intensity of a peak, and thereby extracting and setting an eigen value, and a process of setting a warning spec, a fault spec, and a PM spec which are expanded in predetermined ranges on the basis of the set eigen value, in a semiconductor manufacturing process before the PM is performed.
[35] When only one eigen value is extracted, a large number of errors may occur in determining leakage, and accuracy and credibility may decrease. Therefore, several sampling glasses are introduced, and several effective wavelength bands having an effect upon on leakage are searched for from the sampling glasses. Then, several eigen values are extracted by calculating an area by integrating intensities in the wavelength bands or calculating the intensity of a peak. Among the several eigen values, any one eigen value is arbitrarily set. The setting standard may be changed depending on the process chamber.
[36] At this time, the warning spec may be set in the range of ± 5-7% on the basis of the set eigen value, and the fault spec may be set in the range of ± 12-15% on the basis of the set eigen value.
[37] The PM spec is applied at start and end points of the PM and for a predetermined period (for example, a point of time when a 300th glass is introduced) which lapses until plasma is stabilized from the operation of a semiconductor manufacturing system for a new process or a predetermined period of time (for example, two days). The PM spec may be set in the range of ± 15-20% on the basis of the set eigen value.
[38] That is, when it is assumed that the states of the parts change during the progress of the PM such that a change of plasma approaches ± 15%, and if leakage causing a change of ± 5% occurs, the overall change is ± 20%. Therefore, when the PM spec is set in the range of ± 5% to detect leakage in a general case, the set spec range of ± 5% is included in the ± 20% range of the overall change. Then, a detection error occurs, in which it is detected that leakage occurs as a spec out, even though leakage has not occurred when the PM of the process chamber is performed.
[39] Therefore, since the warning spec and the fault spec are not applied when the PM is performed, the range of the PM spec is expanded into ± 15-20% on the basis of the eigen value, considering the state changes of the parts after the PM is performed.
[40] The second step includes a process of judging whether or not leakage occurs, based on the ranges of the warning spec, the fault spec, and the PM spec which are set in the first step.
[41] That is, light emission analysis on the plasma of the process chamber is performed before the PM is performed. Only when a change in the analyzed plasma light emission deviates from the range (± 5-7%) of the warning spec and the range (± 12-15%) of the fault spec on the basis of the set eigen value, a leakage detector judges that leakage occurs in the process chamber, as a spec out.
[42] Further, when the change in the analyzed plasma light emission does not deviate from the range (± 5-7%) of the warning spec and the range (± 12-15%) of the fault spec on the basis of the set eigen value, the leakage detector judges that leakage has not occurred in the process chamber.
[43] At this time, when data is not input within a predetermined time in a state in which the semiconductor manufacturing process is being performed in the second step, the leakage detector recognizes it as run down. When data is input in a state in which the run down is recognized, the leakage detector ignores the warning spec of ± 5-7%, and generates an alarm only when the change deviates from the range (± 12-15%) of the fault spec.
[44] That is, when the run down occurs, changes in the temperature and amount of residual gas of the process chamber occur, compared with when runs are consecutively performed, and the distribution of plasma of the glasses which are processed immediately after the run down slightly increases in comparison with a general case. Therefore, only when the change deviates from the range (± 12-15%) of the fault spec in a state where the warning spec of ± 5-7% is ignored, the leakage detector judges that leakage occurs, considering that an error of leakage detection caused by the distribution occurs. Then, a system control unit of the semiconductor manufacturing system generates an alarm after the leakage detector judges that the leakage has occurred.
[45] The third step includes a process of resetting the warning spec and the fault spec on the basis of an eigen value which is automatically reset during the semiconductor manufacturing process after the PM is performed.
[46] That is, when a system operation for the semiconductor manufacturing process is performed through the stabilization of plasma after the PM is performed, light emissions of plasmas from several introduced sampling glasses are automatically analyzed, and are then averaged so as to extract and set an eigen value. Further, the warning spec and the fault spec are expanded into predetermined ranges on the basis of the set eigen value.
[47] At this time, the warning spec may be set in the range of ± 5-7% on the basis of the reset eigen value, and the fault spec may be set in the range of ± 12-15% on the basis of the reset eigen value.
[48] The fourth step includes a process of judging whether or not leakage occurs based on the ranges of the warning spec and the fault spec which are set in the third step.
[49] That is, when a new process is performed in a state in which the plasma is stabilized after the PM is performed, light emission analysis on the plasma of the process chamber is performed. When a change in the analyzed plasma light emission deviates from the range (± 5-7%) of the warning spec and the range (± 12-15%) of the fault spec on the basis of the reset eigen value, the leakage detector judges that leakage occurs in the process chamber, as a spec out.
[50] Further, when the change in the analyzed plasma light emission does not deviate from the range (± 5-7%) of the warning spec and the range (± 12-15%) of the fault spec on the basis of the reset eigen value, the leakage detector judges that leakage has not occurred in the process chamber. [51] At this time, when data is not input within a predetermined time in a state in which the semiconductor manufacturing process is being performed after the PM is performed in the fourth step, the leakage detector recognizes it as run down. When data is input in a state in which the run down is recognized, the leakage detector ignores the warning spec of ± 5-7%, and generates an alarm only when the change deviates from the range (+ 12-15%) of the fault spec.
[52] That is, when the run down occurs, changes in the temperature and amount of residual gas of the process chamber occur, compared with when runs are consecutively performed, and the distribution of plasma of the glasses which are processed immediately after the run down slightly increases in comparison with a general case. Therefore, only when the change deviates from the range (± 12-15%) of the fault spec in a state where the warning spec of ± 5-7% is ignored, the leakage detector judges that leakage occurs, considering that an error of leakage detection caused by the distribution occurs. Then, the system control unit of the semiconductor manufacturing system generates an alarm after the leakage detector judges that the leakage has occurred.
[53] In this example embodiment, after an arbitrary eigen value is set before and after the
PM, the ranges of the warning spec, the fault spec, and the PM spec for leakage detection are expanded on the basis of the set eigen value, and the changes of the parts after the PM are considered so as to prevent an error in which leakage is detected even though leakage has not occurred.
[54] While few exemplary embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes may be made to these embodiments without departing from the spirit and scope of the invention as defined by the appended claims and their equivalents.

Claims

Claims
[1] A leakage detecting method of a process chamber, which prevents an error in which leakage is detected even when leakage has not occurred in a case in which the states of parts significantly change when preventive maintenance (PM) is repeatedly performed for a predetermined time such that defective factors of the process chamber during a process of manufacturing semiconductor are reduced, the leakage detecting method comprising: a first step of setting a warning spec, a fault spec, and a PM spec, which are expanded into predetermined ranges on the basis of an eigen value which is arbitrarily set during the semiconductor manufacturing process before the PM is performed; a second step of judging whether or not leakage occurs based on the ranges of the warning spec, the fault spec, and the PM spec which are set in the first step; a third step of resetting the warning spec and the fault spec to a predetermined range on the basis of an eigen value which is automatically reset during the semiconductor manufacturing process after the PR is performed; and a fourth step of judging whether or not leakage occurs based on the ranges of the warning spec and the fault spec which are set in the third step.
[2] The leakage detecting method according to claim 1, wherein the eigen value which is arbitrarily set in the first step is obtained by searching for effective wavelength bands having an effect upon leakage in light emissions of plasmas from several sampling glasses introduced at the initial stage of system operation for the semiconductor manufacturing process and calculating an area by integrating intensities in the wavelength bands or calculating the intensity of a peak.
[3] The leakage detecting method according to claim 1, wherein the warning spec set in the first step is set in the range of 5-7% on the basis of the eigen value set in the first step.
[4] The leakage detecting method according to claim 1, wherein the fault spec set in the first step is set in the range of 12-15% on the basis of the eigen value set in the first step.
[5] The leakage detecting method according to claim 1, wherein the PM spec of the first step is applied at start and end points of the PM and for a predetermined period or time which lapses until plasma is stabilized from operation of a semiconductor manufacturing system for a new process.
[6] The leakage detecting method according to claim 5, wherein the PM spec is set in the range of 15-20% on the basis of the eigen value set in the first step.
[7] The leakage detecting method according to claim 1, wherein the eigen value which is automatically reset in the third step is obtained by automatically analyzing and averaging light emissions of plasmas from several sampling glasses introduced when a system operation for the semiconductor manufacturing process is performed by stabilizing the plasmas.
[8] The leakage detecting method according to claim 1, wherein the warning spec reset in the third step is set in the range of 5-7% on the basis of the reset eigen value.
[9] The leakage detecting method according to claim 1, wherein the fault spec reset in the third step is set in the range of 12-15% on the basis of the reset eigen value.
[10] The leakage detecting method according to claim 1, wherein the second and fourth steps include: when data is not input within a predetermined time in a state in which the semiconductor manufacturing process is being performed, recognizing the state as a run down, when data is input in a state where the run down is recognized, ignoring the warning spec, and only when a change deviates from the range of the fault spec, judging that leakage occurred and generating an alarm.
PCT/KR2008/005381 2008-08-27 2008-09-11 Leakage detecting method of process chamber WO2010024489A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008800077909A CN101790782B (en) 2008-08-27 2008-09-11 Leakage detecting method of process chamber

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0083940 2008-08-27
KR1020080083940A KR20100025249A (en) 2008-08-27 2008-08-27 Leakage detecting method of process chamber

Publications (1)

Publication Number Publication Date
WO2010024489A1 true WO2010024489A1 (en) 2010-03-04

Family

ID=41721639

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/005381 WO2010024489A1 (en) 2008-08-27 2008-09-11 Leakage detecting method of process chamber

Country Status (4)

Country Link
KR (1) KR20100025249A (en)
CN (1) CN101790782B (en)
TW (1) TW201009970A (en)
WO (1) WO2010024489A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101881687A (en) * 2010-05-28 2010-11-10 上海宏力半导体制造有限公司 Leak detection device of semiconductor manufacturing platform as well as use method and platform thereof
KR20120064427A (en) 2010-12-09 2012-06-19 삼성전자주식회사 Control method of semiconductor process distribution
CN102560405B (en) * 2012-02-03 2016-06-29 上海华虹宏力半导体制造有限公司 Ensure the method for film deposition quality, the every day of film deposition equipment monitors method
TWI493313B (en) * 2013-02-06 2015-07-21 Atomic Energy Council Digital circuit having recycling high-pressure chamber for monitoring environment

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08199379A (en) * 1995-01-30 1996-08-06 Hiroshima Nippon Denki Kk Plasma etching device
KR20030095983A (en) * 2002-06-12 2003-12-24 (주)쎄미시스코 Method For Detecting An End Point In A Dry Etching Process
KR20080000923A (en) * 2006-06-28 2008-01-03 (주)쎄미시스코 Real time leak detection system of process chamber

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100489477C (en) * 2004-06-02 2009-05-20 旺宏电子股份有限公司 Method for detecting reaction chamber leakage and etching / depositing process
JP4699235B2 (en) * 2006-02-20 2011-06-08 株式会社サイアン Plasma generating apparatus and work processing apparatus using the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08199379A (en) * 1995-01-30 1996-08-06 Hiroshima Nippon Denki Kk Plasma etching device
KR20030095983A (en) * 2002-06-12 2003-12-24 (주)쎄미시스코 Method For Detecting An End Point In A Dry Etching Process
KR20080000923A (en) * 2006-06-28 2008-01-03 (주)쎄미시스코 Real time leak detection system of process chamber

Also Published As

Publication number Publication date
CN101790782A (en) 2010-07-28
CN101790782B (en) 2011-09-07
TW201009970A (en) 2010-03-01
KR20100025249A (en) 2010-03-09

Similar Documents

Publication Publication Date Title
CN109075066B (en) Method for controlling dry etching process using waferless dry cleaning emission spectrum
KR100780021B1 (en) Plasma processing method and plasma processing apparatus
US10332760B2 (en) Method for controlling plasma processing apparatus
US6796269B2 (en) Apparatus and method for monitoring plasma processing apparatus
US7754615B2 (en) Method and apparatus for detecting endpoint in a dry etching system by monitoring a superimposed DC current
US20040263827A1 (en) Novel methodology for in-situ and real-time chamber condition monitoring and process recovery during plasma processing
JP6849801B2 (en) Selective etching rate monitor
CN100587902C (en) On-line predication method for maintaining etching apparatus
JP2013085002A (en) Method and apparatus for determining endpoint of cleaning or conditioning process in plasma treatment system
KR101169764B1 (en) Real time monitoring system of process chamber
JP2009152304A (en) Plasma processing apparatus
US20200126829A1 (en) Maintenance control method of controlling maintenance of processing device and control device
WO2010024489A1 (en) Leakage detecting method of process chamber
CN104183514A (en) System for improving TSV etching process and etching endpoint monitoring method
US10854433B2 (en) In-situ real-time plasma chamber condition monitoring
US6855209B2 (en) Plasma chamber cleaning
US20140209453A1 (en) Method for predicting plasma micro-arcing, and method for controlling plasma process of production equipment using the same
JP2000021857A (en) Method and device for reactive ion etching
TW202347547A (en) Endpoint detection in low open area and/or high aspect ratio etch applications
KR101106116B1 (en) Leakage detecting method of process chamber
CN107644811A (en) The etching terminal monitoring method and Bosch lithographic method of Bosch technique
JPH10335307A (en) Method for detecting end or process and device using the same
IE83616B1 (en) Plasma chamber cleaning

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880007790.9

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08793765

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08793765

Country of ref document: EP

Kind code of ref document: A1