CN101790782B - Leakage detecting method of process chamber - Google Patents
Leakage detecting method of process chamber Download PDFInfo
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- CN101790782B CN101790782B CN2008800077909A CN200880007790A CN101790782B CN 101790782 B CN101790782 B CN 101790782B CN 2008800077909 A CN2008800077909 A CN 2008800077909A CN 200880007790 A CN200880007790 A CN 200880007790A CN 101790782 B CN101790782 B CN 101790782B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M3/00—Investigating fluid-tightness of structures
- G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
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Abstract
Provided is a leakage detecting method of a process chamber, in which the ranges of a warning spec, a fault spec, and a PM spec for leakage detection having an effect upon leakage after PM is performed are expanded for a predetermined period or time until plasma is stabilized, considering that the states of parts significantly change before and after the PM is performed. Therefore, it is possible to accurately and quickly judge whether or not leakage occurs in a process chamber and to detect minute leakage.
Description
Technical field
The present invention relates to a kind of leakage detection method, more particularly, the leakage detection method that relates to a kind of process chamber, this method can (whether optical emission spectrometry accurately and promptly detects when OES) method or intelligent HMS (smart HMS) detect the leakage of special process chamber and leaks using the optical emitting spectrometer.
Background technology
Use the semiconductor fabrication process of plasma can roughly be divided into dry etch process (dry etching processes), chemical vapor deposition method (chemical vapor deposition processes) and sputtering technology (sputtering processes).
Use the semiconductor-fabricating device of plasma to be divided into: to apply radio frequency (radio frequency between the parallel-plate that faces with each other according to being configured in of electrode that produces plasma, RF) power produces capacitance coupling plasma (the capacitively coupled plasma of plasma, CCP) type device, by applying inductively coupled plasma (the inductively coupled plasma that RF power to the coil of reaction tube outside produces plasma, ICP) type device, produce magnetic strength reactive ion etching (the magnetically enhanced reactive ion etching of plasma by Coupled RF power and magnetic field, MERIE) type device and the electron cyclotron resonace (electron cyclotron resonance, ECR) the type device that produce plasma by coupling microwave and magnetic field.
In the dry etch process of using plasma, reacting gas is provided to process chamber, and process chamber provides the enclosure space that carries out etch process.Then, apply RF power to top electrode and bottom electrode, thereby form electric field, top electrode and bottom electrode are installed into each interval preset distance in process chamber.
Reacting gas is activated by electric field, to become plasma.Film reaction on the ion that is in plasmoid and the wafer that is positioned on the bottom electrode makes the film on the wafer be etched into the shape of expectation.
In this case, use the semiconductor-fabricating device of plasma to need monitoring in real time and control plasma process, make it possible to carry out plasma process in the mode of expectation.
That is to say that produce a large amount of byproducts of reaction in plasma etch process and plasma CVD technology, it reacts with reacting gas or photoresist (photoresist) subsequently, thereby produces polymer.Because this polymer is attached to the inwall of glass surface or process chamber, thus technological parameter is changed, and may produce particle.Therefore, during semiconductor fabrication process, these situations become the defect factors (defective factor) of glass, thereby cause yield to descend.
Therefore, in order to reduce these defect factors, with the scheduled time repeatedly carry out process chamber preventive maintenance (preventive maintenance, PM).
At this moment, in process chamber, behind the film of deposition scheduled volume, be similar to the dry type cleaning of etch process, to remove the polymer that occurs in the process chamber.In the dry type cleaning, need to detect etching end point (etching end point), make that wearing and tearing (worn-out) state of the employed parts of process chamber, the consumption and the productivity of reacting gas are strengthened by endpoint detector (end point detector).
Yet, when in process chamber, carrying out before and after the PM analyzing plasma and leaking by this analyzing and testing with OES, the precise decreasing of detection, and be difficult to detect the etching end point of cleaning.
That is to say because the state generation significant change of parts when process chamber is carried out PM, so even do not leak, plasma also with carry out differing widely before the PM.In this case, the mistake that has leakage may appear detecting.
In addition, along with periodicity or aperiodicity ground carry out the dry type cleaning, the distribution of plasma takes place.In this case, the specification limit (spec range) of the leak detection of being undertaken by OES should distribute greater than this.Therefore, detect less than trickle leakage by OES.
In addition, when operation taking place stop (run down), the temperature of process chamber and residual air capacity are compared when moving continuously and are changed.The plasma distribution of the glass of handling immediately after operation stops to be compared with ordinary circumstance slightly to be increased.When this distribution slightly increases, can't accurately control the specification limit of leak detection.
Summary of the invention
Technical problem
The invention relates to a kind of leakage detection method of process chamber, its state of considering parts in semiconductor fabrication process is carrying out before and after the PM significant change taking place, by after carrying out PM, being provided with leaking the specification limit of influential leak detection with predetermined period or time, till plasma stability, and can accurately and promptly characterization processes is indoor under faultless situation whether leak.
Technical scheme
According to an aspect of the present invention, a kind of leakage detection method of process chamber is provided, it has avoided repeatedly carrying out preventive maintenance (PM) with the scheduled time so that the defect factors of the process chamber during the semiconductor fabrication process when reducing, under the situation of the state generation significant change of parts, even the mistake that yet detects leakage does not take place to leak.This leakage detection method comprises: first step, during the semiconductor fabrication process before carrying out PM, alarm specification, fault specification and PM specification are set, and alarm specification, fault specification and PM specification are to be extended to preset range on the basis of the characteristic value that is provided with arbitrarily; Second step judges whether to leak based on the scope of the alarm specification that is provided with in the first step, fault specification and PM specification; Third step during the semiconductor fabrication process after carrying out PM, on the basis of the characteristic value of reseting automatically, resets to preset range with alarm specification and fault specification; The 4th step judges whether to leak based on the scope of alarm specification that is provided with in third step and fault specification.
The characteristic value that is provided with arbitrarily in the first step can obtain in the following manner: search leaking influential effective wave band in the plasma light emission of some sampling glass of introducing in the starting stage of the system operation of semiconductor fabrication process, and come reference area by the intensity in the described wave band is carried out integration, or calculate peak strength.
When carrying out the system operation of semiconductor fabrication process by stable plasma, the light emission of the plasma of the some sampling glass that can introduce by automatic analysis also averages the characteristic value that obtains to reset automatically in the third step to described light emission.
Be arranged on the basis of the characteristic value that the alarm specification that is provided with in the first step can be provided with in first step ± scope of 5-7% in.
Be arranged in the scope of 12-15% on the basis of the characteristic value that the fault specification that is provided with in the first step can be provided with in first step.
The PM specification of first step can be applied to starting point and the terminal point of PM and continue predetermined period or time, and this predetermined period or time are lasting until plasma stability from the operation of the semi-conductor manufacturing system that is used for new technology.
Be arranged on the basis of the characteristic value that the PM specification can be provided with in first step ± scope of 15-20% in.
The alarm specification of reseting in the third step can be arranged on the basis of the described characteristic value of reseting ± scope of 5-7% in.
The fault specification of reseting in the third step can be arranged on the basis of the described characteristic value of reseting ± scope of 12-15% in.
Second step and the 4th step can comprise: when when not importing data under the ongoing state of semiconductor fabrication process in the scheduled time, think that described state stops for operation, when thinking under the state that stops of operation the input data, ignore the alarm specification, if and only if change when departing from the scope of fault specification, judge alarm takes place to leak and produce.
Useful effect
According to the present invention, consider that the state that carries out PM front and back parts takes place significantly to change, predetermined period or will be after carrying out PM in the time to the expanded range of alarm specification, fault specification and the PM specification of leaking influential leak detection, till plasma stability.Therefore, can accurately and form a prompt judgement and whether take place in the process chamber to leak and can detect trickle leakage.
Description of drawings
Fig. 1 illustrates the schematic diagram that detects kenel according to the process chamber internal leakage of illustrated embodiments of the invention.
Embodiment
Hereinafter, example embodiment of the present invention is described with reference to the accompanying drawings.
Fig. 1 illustrates the schematic diagram that detects kenel according to the process chamber internal leakage of illustrated embodiments of the invention.
With reference to Fig. 1, (preventive maintenance, when PM) making the defect factors of the process chamber during the semiconductor fabrication process reduce, significant change can take place in the state of parts when repeatedly carry out preventive maintenance with the scheduled time.In this case, even do not leak, also may detect leakage.Carry out the leakage detection method according to the process chamber of illustrated embodiments of the invention, to avoid this detection mistake, this method comprises first to fourth step.
First step is included in the plasma light emission of some sampling glass that starting stage of system operation introduces, search is to leaking influential effective wave band (wavelength band), and come reference area or calculate peak strength by the intensity in the wave band being carried out integration, thereby extract and be provided with the process of characteristic value (eigen value), and in the semiconductor fabrication process before carrying out PM, alarm specification (warning spec) is set, the process of fault specification (fault spec) and PM specification, wherein, alarm specification, fault specification and PM specification are to be extended to preset range on the basis of the characteristic value that is provided with.
When only extracting a characteristic value, when determine leaking, a large amount of mistakes may occur, and accuracy and reliability can reduce.Therefore, introduce some sampling glass, and from sampling glass, search leaking influential some effective wave bands.Then, come reference area or calculating peak strength to extract the certain characteristics value by the intensity in the wave band being carried out integration.In this certain characteristics value, arbitrary characteristic value is to be provided with arbitrarily.Can change according to process chamber and set up standard.
At this moment, the alarm specification can be arranged on the basis of the characteristic value that is provided with ± scope of 5-7% in, and the fault specification can be arranged on the basis of the characteristic value that is provided with ± scope of 12-15% in.
The PM specification is applied to starting point and the terminal point of PM and is employed (for example reaching predetermined period, time point when introducing the 300th sheet glass) or the preset time section (for example, two days), this predetermined period is that operation from the semi-conductor manufacturing system that is used for new technology is until plasma stability.The PM specification can be arranged on the basis of the characteristic value that is provided with ± scope of 15-20% in.
That is to say, when supposition state of parts during PM carries out changes, make that the variation of plasma is approaching ± 15%, and if cause ± during the leakage of 5% variation, always be changed to ± 20%.Therefore, when in the ordinary course of things the PM specification being arranged on ± detecting in 5% the scope when leaking, setting ± 5% specification limit be included in total variation ± 20% scope in.Therefore, when carrying out the PM of process chamber, occur to detect mistake,, but detect and leak owing to exceeding specification even wherein do not leak.
Therefore, owing to do not use alarm specification and fault specification when carrying out PM, therefore consider that the state that carries out the PM back part changes, the PM specification limit is extended on the basis of characteristic value ± 15-20%.
Second step comprises that the scope based on the alarm specification that is provided with, fault specification and PM specification judges whether to take place leaking process in first step.
That is to say that the plasma to process chamber before carrying out PM carries out the light emission analysis.Only work as the photoemissive variation of the plasma of being analyzed departs from the alarm specification on the basis of the characteristic value that is provided with scope (± 5-7%) and the scope of fault specification (± 12-15%) time, owing to exceed specification, leakage detector is judged in the process chamber and is leaked.
In addition, when the scope that does not depart from the alarm specification on the basis of the characteristic value that the photoemissive variation of the plasma of being analyzed is being provided with (± 5-7%) and the scope of fault specification (± 12-15%) time, leakage detector is judged in the process chamber and is not leaked.
At this moment, in second step, when when not importing data under the ongoing state of semiconductor fabrication process in the scheduled time, leakage detector thinks that its operation stops.When thinking under the state that stops of operation the input data, leakage detector ignores ± the alarm specification of 5-7%, and and if only if change the scope that departs from the fault specification (± produce alarm 12-15%) time.
That is to say that when operation taking place stop, the temperature of process chamber and residual air capacity are compared when moving continuously and changed, and the plasma distribution of the glass of handling is immediately compared with ordinary circumstance slightly and is increased after operation stops.Therefore, consider appearance by the leak detection mistake that distribution causes, ignoring ± state of the alarm specification of 5-7% under, only when change the scope that departs from the fault specification (± 12-15%) time, leakage detector is just judged and is leaked.Then, the system control unit of semi-conductor manufacturing system judges that at leakage detector having leaked the back produces alarm.
Third step is included in and carries out reseting the process of alarm specification and fault specification during the PM semiconductor fabrication process afterwards on the basis of the characteristic value of reseting automatically.
That is to say, after carrying out PM, when carrying out the system operation of semiconductor fabrication process, automatically analyze the light emission of plasma of the sampling glass of some introducings, average then, to extract and to be provided with characteristic value by plasma stable.In addition, alarm specification and fault specification are extended to preset range on the basis of the characteristic value that is provided with.
At this moment, the alarm specification can be arranged on the basis of the characteristic value of reseting ± scope of 5-7% in, and the fault specification can on the basis of the characteristic value of reseting, be arranged on ± scope of 12-15% in.
The 4th step comprises that the scope based on alarm specification that is provided with and fault specification judges whether to take place leaking process in third step.
That is to say, when carrying out carrying out new technology under the state in plasma stability after the PM, the plasma of process chamber is carried out the light emission analysis.When the scope that departs from the alarm specification on the basis of the characteristic value that the photoemissive variation of the plasma of being analyzed is being reseted (± 5-7%) and the scope of fault specification (± 12-15%) time, owing to exceed specification, leakage detector is judged in the process chamber and is leaked.
In addition, when the scope that does not depart from the alarm specification on the basis of the characteristic value that the photoemissive variation of the plasma of being analyzed is being reseted (± 5-7%) and the scope of fault specification (± 12-15%) time, leakage detector is judged in the process chamber and is not leaked.
At this moment, in the 4th step, under the ongoing state of semiconductor fabrication process, when not importing data in preset time, leakage detector thinks that its operation stops after carrying out PM.When thinking under the state that stops of operation the input data, leakage detector ignores ± the alarm specification of 5-7%, and and if only if change the scope that departs from the fault specification (± produce alarm 12-15%) time.
That is to say that when operation taking place stop, the temperature of process chamber and residual air capacity are compared when moving continuously and changed, and the plasma distribution of the glass of handling is immediately compared with ordinary circumstance slightly and is increased after operation stops.Therefore, consider appearance by the leak detection mistake that distribution causes, ignoring ± state of the alarm specification of 5-7% under, only when change the scope that departs from the fault specification (± 12-15%) time, leakage detector is just judged and is leaked.Then, the system control unit of semi-conductor manufacturing system judges that at leakage detector having leaked the back produces alarm.
In this example embodiment, after before and after PM, the arbitrary characteristics value being set, on the basis of the characteristic value that is provided with, enlarge the scope of the alarm specification, fault specification and the PM specification that are used for leak detection, even and consider that the variation of the parts after the PM avoids not taking place to leak the mistake that also detects leakage.
Though illustrated and described several exemplary embodiment of the present invention, but what those skilled in the art should understand that is, under the situation that does not break away from the spirit and scope of the present invention that limit by claims and equivalent thereof, can carry out various modifications to these embodiment.
Claims (8)
1. the leakage detection method of a process chamber, described leakage detection method is avoided repeatedly carrying out preventive maintenance with the scheduled time so that the defect factors of the process chamber during the semiconductor fabrication process when reducing, under the situation of the state generation marked change of parts, even do not take place to leak the mistake that also detects leakage, described leakage detection method comprises:
First step, during the semiconductor fabrication process before carrying out preventive maintenance, alarm specification, fault specification and preventive maintenance specification are set, and alarm specification, fault specification and preventive maintenance specification are to be extended to preset range on the basis of the characteristic value that is provided with arbitrarily;
Second step judges whether to leak based on the scope of the alarm specification that is provided with in the first step, fault specification and preventive maintenance specification;
Third step during the semiconductor fabrication process after carrying out preventive maintenance, on the basis of the characteristic value of reseting automatically, resets to preset range with alarm specification and fault specification;
The 4th step judges whether to leak based on the scope of alarm specification that is provided with in third step and fault specification,
The characteristic value that is provided with arbitrarily in the first step is to obtain in the following manner: search leaking influential effective wave band in the plasma light emission of some sampling glass of introducing in the starting stage of the system operation of semiconductor fabrication process, and, the intensity in the described wave band comes reference area by being carried out integration, or calculating peak strength
When carrying out the system operation of semiconductor fabrication process by stable plasma, the light emission of the plasma of some sampling glass of introducing by automatic analysis also averages the characteristic value that obtains to reset automatically in the third step to described light emission.
2. the leakage detection method of process chamber according to claim 1, wherein, be arranged on the basis of the characteristic value that the alarm specification that is provided with in the first step is provided with in first step ± scope of 5-7% in.
3. the leakage detection method of process chamber according to claim 1, wherein, be arranged on the basis of the characteristic value that the fault specification that is provided with in the first step is provided with in first step ± scope of 12-15% in.
4. the leakage detection method of process chamber according to claim 1, wherein, the preventive maintenance specification of first step is applied to the starting point and the terminal point of preventive maintenance and continues predetermined period or time, and described predetermined period or time are lasting until plasma stability from the operation of the semi-conductor manufacturing system that is used for new technology.
5. the leakage detection method of process chamber according to claim 4, wherein, be arranged on the basis of the characteristic value that the preventive maintenance specification is provided with in first step ± scope of 15-20% in.
6. the leakage detection method of process chamber according to claim 1, wherein, the alarm specification of reseting in the third step is arranged on the basis of the described characteristic value of reseting ± scope of 5-7% in.
7. the leakage detection method of process chamber according to claim 1, wherein, the fault specification of reseting in the third step is arranged on the basis of the described characteristic value of reseting ± scope of 12-15% in.
8. the leakage detection method of process chamber according to claim 1, wherein, second step and the 4th step comprise:
When in the scheduled time, not importing data under the ongoing state of semiconductor fabrication process, think that described state stops for operation, when thinking under the state that stops of operation the input data, ignore the alarm specification, if and only if change when departing from the scope of fault specification, judge alarm takes place to leak and produce.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2008-0083940 | 2008-08-27 | ||
| KR1020080083940A KR20100025249A (en) | 2008-08-27 | 2008-08-27 | Leakage detecting method of process chamber |
| PCT/KR2008/005381 WO2010024489A1 (en) | 2008-08-27 | 2008-09-11 | Leakage detecting method of process chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101790782A CN101790782A (en) | 2010-07-28 |
| CN101790782B true CN101790782B (en) | 2011-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008800077909A Expired - Fee Related CN101790782B (en) | 2008-08-27 | 2008-09-11 | Leakage detecting method of process chamber |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20100025249A (en) |
| CN (1) | CN101790782B (en) |
| TW (1) | TW201009970A (en) |
| WO (1) | WO2010024489A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101881687A (en) * | 2010-05-28 | 2010-11-10 | 上海宏力半导体制造有限公司 | Leak detection device of semiconductor manufacturing platform as well as use method and platform thereof |
| KR20120064427A (en) | 2010-12-09 | 2012-06-19 | 삼성전자주식회사 | Control method of semiconductor process distribution |
| CN102560405B (en) * | 2012-02-03 | 2016-06-29 | 上海华虹宏力半导体制造有限公司 | Ensure the method for film deposition quality, the every day of film deposition equipment monitors method |
| TWI493313B (en) * | 2013-02-06 | 2015-07-21 | Atomic Energy Council | Digital circuit having recycling high-pressure chamber for monitoring environment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1704744A (en) * | 2004-06-02 | 2005-12-07 | 旺宏电子股份有限公司 | Detection method for reaction chamber leakage and etching/deposition process |
| CN101026920A (en) * | 2006-02-20 | 2007-08-29 | 诺日士钢机株式会社 | Plasma generation apparatus and work processing apparatus |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2674965B2 (en) * | 1995-01-30 | 1997-11-12 | 広島日本電気株式会社 | Plasma etching equipment |
| KR100473857B1 (en) * | 2002-06-12 | 2005-03-10 | (주)쎄미시스코 | Method For Detecting An End Point In A Dry Etching Process |
| KR100816453B1 (en) * | 2006-06-28 | 2008-03-27 | (주)쎄미시스코 | Real-time leak detection system of process chamber |
-
2008
- 2008-08-27 KR KR1020080083940A patent/KR20100025249A/en not_active Application Discontinuation
- 2008-09-11 CN CN2008800077909A patent/CN101790782B/en not_active Expired - Fee Related
- 2008-09-11 TW TW97134789A patent/TW201009970A/en unknown
- 2008-09-11 WO PCT/KR2008/005381 patent/WO2010024489A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1704744A (en) * | 2004-06-02 | 2005-12-07 | 旺宏电子股份有限公司 | Detection method for reaction chamber leakage and etching/deposition process |
| CN101026920A (en) * | 2006-02-20 | 2007-08-29 | 诺日士钢机株式会社 | Plasma generation apparatus and work processing apparatus |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2004-023102A 2004.01.22 |
| JP特开平8-199379A 1996.08.06 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20100025249A (en) | 2010-03-09 |
| TW201009970A (en) | 2010-03-01 |
| WO2010024489A1 (en) | 2010-03-04 |
| CN101790782A (en) | 2010-07-28 |
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