CN107408220B - 用于制造芯片卡模块的带状衬底 - Google Patents

用于制造芯片卡模块的带状衬底 Download PDF

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CN107408220B
CN107408220B CN201680010850.7A CN201680010850A CN107408220B CN 107408220 B CN107408220 B CN 107408220B CN 201680010850 A CN201680010850 A CN 201680010850A CN 107408220 B CN107408220 B CN 107408220B
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substrate
layer
nickel
chip
alloy
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CN107408220A (zh
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埃克哈德·迪策尔
贝恩德·格莱尔特
弗兰克·克鲁格
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Herrlich Germany Co ltd
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Herrlich Germany Co ltd
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    • G—PHYSICS
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    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
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    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C25D5/14—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
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    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • C—CHEMISTRY; METALLURGY
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Abstract

本发明涉及一种由具有多个衬底单元(11)的薄膜(15)构成的用于制造芯片卡模块的带状衬底(10)，其中所述衬底(10)具有用于至少局部直接或间接与半导体芯片发生接触的内侧(13)和与所述内侧(13)相对的外侧(12)。根据本发明，所述薄膜(15)由钢材，特别是不锈钢构成，其中在所述外侧(12)的至少部分区域上形成由镍或镍合金构成的第一层(21)。

Description

用于制造芯片卡模块的带状衬底
技术领域
本发明涉及一种由具有多个衬底单元的薄膜构成的用于制造芯片卡模块的带状衬底，以及一种芯片卡模块、一种具有这种芯片卡模块的电子装置和一种制造衬底的方法。
背景技术
现有技术中已经公开了将带状衬底嵌入塑料卡的凹槽中制成的芯片卡模块。对芯片卡的运行而言，至关重要的组成部分是集成电路，其决定了芯片卡的工作方式和应用领域。
半导体芯片是主要用来保护该半导体芯片的所谓芯片卡模块的部分。该芯片卡模块还为半导体芯片与读取设备建立通信连接。常见的用于制造芯片卡模块的带状衬底以铜为基底，相应地将这些基底镀镍，再镀金。但由于金价较高，这种涂层方式是带状衬底的一种非常昂贵的制作方式。
对带状衬底或者对芯片卡模块的所产生的金属化层的常见要求之一是需要有相对较小的接触电阻。接触电阻必须在带状衬底的整个长度范围内以及在多种生产批次中保持不变。但接触电阻经常会在芯片卡生产过程中，特别是在热处理步骤结束后，发生变化，其原因可能是形成了铬氧化物。但在塑料的模压成型工艺过程中，热处理步骤通常是必不可少的。芯片卡呈扁平状，因而芯片卡模块不能超过该芯片卡的最大总厚度。
另一方面，芯片卡模块必须具有足够的稳定性，才能防止芯片或芯片卡模块受损，从而防止芯片卡的功能受到影响。
发明内容
本发明的目的是提供一种用于制造芯片卡模块的带状衬底，其既能降低所用材料的制造成本，又能降低用芯片卡模块制成的电子装置的总厚度。本发明还对带状衬底进行改良，从而在芯片卡模块的外接触侧上实现始终较小的接触电阻。本发明的其他目的是提供一种芯片卡模块、一种具有这种芯片卡模块的电子装置(特别是芯片卡)和一种制造衬底的方法。
在所述带状衬底方面，本发明用以达成上述目的的解决方案为权利要求1的主题；在所述芯片卡模块方面，本发明用以达成上述目的的解决方案为权利要求7的主题；在所述电子装置方面，本发明用以达成上述目的的解决方案为权利要求13或14的主题；在所述制造衬底的方法方面，本发明用以达成上述目的的解决方案为权利要求15的主题。
本发明基于以下理念：提供由具有多个衬底单元的薄膜构成的用于制造芯片卡模块的带状衬底。所述衬底具有至少局部直接或间接与半导体芯片接触的内侧和与所述内侧相对的外侧。
根据本发明，所述薄膜由钢，特别是不锈钢形成，其中在所述带状衬底的外侧的至少部分区域上形成由镍或镍合金构成的第一层。
芯片卡模块的表面可以采用廉价的涂层来进行保护，该表面是实际可见的且与读卡设备接触。镍和镍合金的接触电阻足够小且该接触电阻在生产过程中能够保持稳定。因此，以此方式形成的芯片卡模块的外侧能够起作用，使得接触电阻在所有批次中保持不变且在生产过程中不会增大。芯片卡模块的外侧也可以称作芯片卡模块的触点侧或接触侧。
此外，镍是一种相对廉价的材料，因而与金涂层相比能够大幅降低成本。
与以铜为基材的现有薄膜的厚度相比，本发明的衬底的薄膜厚度较小，且不会影响用所述衬底制成的芯片卡模块的稳定性。
优选地，由钢材，特别是不锈钢构成的所述薄膜的厚度为15μm至35μm。在一特别优选的实施方式中，薄膜厚度约为20μm。采用所述带状衬底制成的芯片卡模块，能够将芯片卡模块的总厚度降至200μm。
在本发明的一特别优选的实施方式中，所述薄膜由奥氏体不锈钢构成。与现有技术中常用的铜合金不同，钢或不锈钢在强度极高的同时具有足够的成型特性。优选地，所述钢材指的是奥氏体不锈钢。不锈钢这一概念指的是根据EN 10020合金或非合金的纯度极高的钢材，如硫和磷比例最大为0.025％的钢材。奥氏体结构为防锈且耐酸的钢材，如根据DIN267第11部分的钢材。这种不锈钢的优点是强度较高且成型特性较好。
所述衬底的一侧指的是带状衬底的内侧，其各衬底单元的侧用于在待制成的芯片卡模块上与半导体芯片进行直接或间接的接触。
所述带状衬底的外侧定义为衬底的一侧，其一方面与所述内侧相对，另一方面与读取设备(如自动取款机)接触。带状衬底的外侧通常也称作芯片卡模块的金属化层。通过在带状衬底的外侧上形成由镍或镍合金构成的第一层，与读取设备的接触实际上发生在这个较薄的第一层上。
在所述带状衬底的内侧的至少部分区域上形成由镍或镍合金构成的第二层。在本发明的一特别优选的实施方式中，所述带状衬底全部涂布镍或镍合金。
在本发明的另一实施方式中，在由镍或镍合金构成的所述第二层的至少部分区域上形成由银或银合金构成的第三层。这个额外的银或银合金层或前述第三层用于改善待制造的芯片卡模块与半导体芯片的接触。优选地，所述第三层也相对较薄。所述第三层的层厚可以是0.1至5.0μm，特别是0.5至3.0μm，尤其是1.0至2.0μm。这样就实现衬底与半导体芯片的直接或间接接触，例如在这个由银或银合金构成的第三层上实现衬底与半导体芯片的直接或间接接触。
所述镍合金可以是钯比例为0.1％至30.0％的镍钯合金(NiPd)，特别是钯比例为5.0％至25.0％镍钯合金(NiPd)，尤其是钯比例为10.0％至20.0％的镍钯合金(NiPd)。本文所提出的镍层或镍合金层在外侧上且可选地在内侧上对带状衬底进行保护。这类材料具有相对较小的接触电阻，该接触电阻在生产过程中能够保持足够的稳定性。
所述第一层和/或所述第二层的层厚可以是0.1至5.0μm，特别是0.5至3.0μm，尤其是1.0至2.0μm。亦即，所述第一层和/或所述第二层的层厚较小，不会对待制成的芯片卡模块的总厚度造成不利影响。
本发明还涉及一种具有衬底单元的芯片卡模块，所述衬底单元具有内侧和与所述内侧相对的外侧，其中半导体芯片直接或间接地与所述衬底单元的内侧接触。
根据本发明，所述衬底单元由钢材，特别是不锈钢构成，其中在所述衬底单元的外侧的至少部分区域上形成由镍或镍合金构成的第一层。所述衬底单元指的是前述由薄膜制作的带状衬底的衬底单元。
因此，下文中的阐述和/或实施方式源于此前结合所述带状衬底所提及的阐述和/或实施方式。所述衬底单元的内侧指的是用于与芯片卡模块的半导体芯片直接或间接接触的一侧。所述外侧同样指的是芯片卡模块的金属化层即芯片卡模块的用于与读取设备接触的一侧。
在所述衬底单元的内侧的部分区域上形成由镍或镍合金构成的第二层。据此，所述衬底单元可以完全被由镍或镍合金构成的层包围或者涂布有由镍或镍合金构成的层。所述镍合金可指钯比例为0.1％至30.0％的镍钯合金(NiPd)，特别是5.0％至25.0％的镍钯合金(NiPd)，尤其是10.0％至20.0％的镍钯合金(NiPd)。
由镍或镍合金构成的所述第一层和/或由镍或镍合金构成的所述第二层的层厚可以是0.1至5.0μm，特别是0.5至3.0μm，尤其是1.0至2.0μm。
在形成在所述衬底单元的内侧上的所述第二层的部分区域上，形成有由银或银合金构成的第三层。这种在衬底单元的内侧上增设的第三层用于改善芯片卡模块或衬底单元与半导体芯片的接触。所述第三层的层厚可以是0.1至5.0μm，特别是0.5至3.0μm，尤其是1.0至2.0μm。
综上所述，本发明的芯片卡模块与本发明的衬底基于同一理念，即：在由钢材，特别是不锈钢构成的薄膜上，特别是在该薄膜的外侧的至少部分区域上形成有由镍或镍合金构成的层。
本发明还包括一种具有本发明的芯片卡模块的电子装置，特别是芯片卡、健康卡、银行卡、车票、公共交通卡、酒店卡、证件、护照、纸箔式卡(如门票)。
本发明还包括一种具有本发明的芯片卡模块的双界面卡。双界面卡包括两个界面，即接触式界面以及非接触式(如RFID)界面。此外，非接触式芯片卡还指应答器卡，如Mifare卡或Legic卡。
本发明还提供一种具有多个衬底单元的带状衬底的制造方法，用于针对芯片卡模块的生产进行进一步加工。在该方法中，第一步骤是将所述衬底单元的结构置入由钢材，特别是不锈钢构成的薄膜。随后至少在部分区域上为所述薄膜涂布镍或镍合金。优选地，所述扁平式带状衬底的两侧涂布镍或镍合金。
在本发明的另一实施方式中，涂布有镍或镍合金的所述薄膜至少在一侧的部分区域涂布银，特别是在用于直接或间接地与半导体芯片接触的内侧上涂布银。
附图说明
下面的实施例结合示意性附图对本发明的更多细节进行详细说明。其中：
图1a为具有多个衬底单元的用于制造芯片卡模块的带状衬底的示意图，其中在本图中可看出外侧；
图1b为图1a所示带状衬底的内侧的俯视图；以及
图2为图1a和1b所示带状衬底的示意性截面图。
具体实施方式
本发明中能够实现带状衬底10的基本构造如图1所示。但本发明并非仅限于图1a所示基本构造(特别是带状衬底10的结构化处理)，本发明应包含采用其他几何形状进行结构化的衬底。
图1a和1b所示带状衬底10为用来进一步加工并封装或芯片卡模块的初级产品。图1a和1b所示结构在进一步加工后的芯片卡模块中或在最终产品(如芯片卡或一般性电子装置)中，同样存在。
具体而言，图1a所示带状衬底的构造如下。带状衬底10用柔性薄膜15制成。柔性薄膜15由硬滚压奥氏体不锈钢构成。薄膜15具有多个衬底单元11，衬底单元11在后续的处理步骤中被挑出来制造芯片卡模块。
这些衬底单元11构造相同。图1a为带状衬底10的外侧12的俯视图。该外侧12与带状衬底10的(图1b所示)内侧13相对。带状衬底10的外侧12指的是带状衬底10形成有衬底单元11的外侧12'的一侧。各衬底单元11的外侧12'为芯片卡模块的接触面或金属化面。这些芯片卡模块被称为标准芯片卡上的金质或铜质元件。
在带状衬底10的外侧12上可看到衬底单元11的结构16。借助这些结构16来形成衬底单元11的各接触面。
图1b示出带状衬底10的内侧13。在此情形下也能看到各衬底单元11。带状衬底10的内侧13指的是带状衬底10形成有各衬底单元11的内侧13'的一侧。在各衬底单元11的内侧13'上直接或间接地接触半导体芯片(未图示)。可以借助接合线(bonding wires)实施接触。
本文中的实施例所使用的薄膜为由硬滚压奥氏体不锈钢构成的金属薄膜。该薄膜的厚度为15μm至35μm，具体而言约为20μm。这样就能将封装或芯片卡模块的总厚度降至200μm。
图2为带状衬底10的示意性截面图。衬底10包括用于至少局部直接或间接与半导体芯片接触的内侧13，和与该内侧13相对且在本示例中与其平行的外侧12。
由镍或镍合金构成的第一层20形成在外侧12的至少部分区域上。
在内侧13的至少部分区域上形成有由镍或镍合金构成的第二层21。
举例来说，所述镍合金可指钯比例为10.0％至20.0％的镍钯合金(NiPd)。
换言之，薄膜15在整个表面上涂布有镍涂层或镍合金涂层。第一层20和第二层21分别具有1.0μm至2.0μm的层厚d1或d2。
在第二层21的至少部分区域上形成由银或银合金构成的第三层22。换言之，第三层22指的是衬底单元11的朝向半导体芯片(未图示)的一侧。第三层22具有1.0μm至2.0μm的层厚d3。
特别是如图1b所示，第三层22并未完全涂敷在带状衬底10的内侧13上。特别是具有输送孔30的连续带31并未涂覆第三层22，因此能节约银材料或银合金材料。
在本发明的芯片卡模块上，一个半导体芯片与带状衬底10的一个衬底单元11连接。为此，该半导体芯片可以嵌在灌封材料中。
通过以下方式来用图1a和1b所示带状衬底10制造芯片卡模块：首先将一个半导体芯片安装在一个衬底单元11的内侧13'上，并使其直接或间接地与内侧13'连接。特别是在由银或银合金构成的较薄的第三层22上实施直接或间接的接触。例如可以借助接合线实施接触。随后通过以下方式将半导体芯片和接合线固定：涂覆模塑材料或灌封材料，如环氧树脂。灌封材料硬化后，该灌封材料与相应的衬底单元11牢固连接。
随后可以对这个构造进行电子冲裁。随后实施功能检查，以便拣出错误模块。而后将芯片卡模块与薄膜15分离，例如可通过移除该衬底单元11之间的连接片实现分离。随后可以对通过上述方式制成的芯片卡模块进行安装。
具有多个衬底单元11的带状衬底10的制造方法，用于对芯片卡模块的生产进行进一步加工，在该方法中，首先为由不锈钢构成的薄膜15配设衬底单元11的结构16。随后为薄膜15电性涂布由镍或镍合金构成的第一层20和第二层21。
随后在内侧13的至少部分区域为该涂布有镍或镍合金的薄膜15涂布由银或银合金构成的第三层22。
上述衬底单元11或借助衬底单元11制成的芯片卡模块特别适用于电子装置，如芯片卡。此处尤指双界面卡。
附图标记列表
10 带状衬底
11 衬底单元
12 衬底的外侧
12' 衬底单元的外侧
13 衬底的内侧
13' 衬底单元的内侧
15 薄膜
16 结构
20 第一层
21 第二层
22 第三层
30 输送孔
31 连续带
d1 第一层的厚度
d2 第二层的厚度
d3 第三层的厚度

Claims (16)

1.一种由具有多个衬底单元(11)的薄膜(15)构成的用于制造芯片卡模块的带状衬底(10)，其中所述衬底(10)具有用于至少局部直接或间接与半导体芯片发生接触的内侧(13)和与所述内侧(13)相对的外侧(12)，其特征在于，
所述薄膜(15)由不锈钢构成，且在所述外侧(12)的至少部分区域上形成有由镍或镍合金构成的第一层(20)；
所述镍合金是钯比例为0.1％-30.0％的镍钯合金(NiPd)。
2.根据权利要求1所述的衬底(10)，
其特征在于，
由镍或镍合金构成的第二层(21)形成在所述内侧(13)的至少部分区域上。
3.根据权利要求2所述的衬底(10)，
其特征在于，
所述镍合金是钯比例为5.0％-25.0％的镍钯合金(NiPd)。
4.根据上述权利要求2所述的衬底，
其特征在于，
所述第一层(20)和/或所述第二层(21)的层厚(d1，d2)为0.1-5.0μm。
5.根据权利要求2至4中任一项所述的衬底，
其特征在于，
由银或银合金构成的第三层(22)形成在所述第二层(21)的至少部分区域上。
6.根据权利要求5所述的衬底，
其特征在于，
所述第三层(22)的层厚(d3)为0.1-5.0μm。
7.一种具有一个衬底单元(11)的芯片卡模块，所述衬底单元具有内侧(13')和与所述内侧(13')相对的外侧(12')，其中一个半导体芯片直接或间接地与所述内侧(13')接触，
其特征在于，
所述衬底单元(11)由不锈钢构成，且在所述外侧(12')的至少部分区域上形成有由镍或镍合金构成的第一层(20)；
所述镍合金是钯比例为0.1％-30.0％的镍钯合金(NiPd)。
8.根据权利要求7所述的芯片卡模块，
其特征在于，
由镍或镍合金构成的第二层(21)至少形成在所述内侧(13')上。
9.根据权利要求8所述的芯片卡模块，
其特征在于，
所述镍合金是钯比例为5.0％-25.0％的镍钯合金(NiPd)。
10.根据权利要求8中所述的芯片卡模块，
其特征在于，
所述第一层(20)和/或所述第二层(21)的层厚(d1，d2)为0.1-5.0μm。
11.根据权利要求8至10中任一项所述的芯片卡模块，
其特征在于，
由银或银合金构成的第三层(22)形成在所述第二层(21)的至少部分区域上。
12.根据权利要求11所述的芯片卡模块，
其特征在于，
所述第三层(22)的层厚(d3)为0.1-5.0μm。
13.一种具有根据权利要求7至12中任一项所述的芯片卡模块的电子装置，其是芯片卡、健康卡、银行卡、公共交通卡、酒店卡、证件、护照或纸箔式卡。
14.一种具有根据权利要求7至12中任一项所述的芯片卡模块的双界面卡。
15.一种具有多个衬底单元(11)的带状衬底(10)的制造方法，用于针对芯片卡模块的生产进行进一步加工，在所述方法中，将所述衬底单元(11)的结构(16)置入由不锈钢构成的薄膜(15)，随后全部地为所述薄膜(15)电性涂布镍或镍合金；将所述镍合金中的钯比例控制在0.1％-30.0％范围内。
16.根据权利要求15所述的方法，
其特征在于，
涂布有镍或镍合金的所述薄膜至少在用于直接或间接地与半导体芯片发生接触的内侧(13)上涂布银或银合金。
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