CN107359229A - A kind of LED epitaxial slice and its manufacture method - Google Patents
A kind of LED epitaxial slice and its manufacture method Download PDFInfo
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- CN107359229A CN107359229A CN201710520222.XA CN201710520222A CN107359229A CN 107359229 A CN107359229 A CN 107359229A CN 201710520222 A CN201710520222 A CN 201710520222A CN 107359229 A CN107359229 A CN 107359229A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 24
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 74
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000004888 barrier function Effects 0.000 claims abstract description 19
- 239000002019 doping agent Substances 0.000 claims abstract description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 48
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 25
- 229910052733 gallium Inorganic materials 0.000 claims description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims description 23
- 230000008859 change Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 11
- 238000002347 injection Methods 0.000 abstract description 5
- 239000007924 injection Substances 0.000 abstract description 5
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 230000004913 activation Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 229910052738 indium Inorganic materials 0.000 description 18
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 18
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002680 magnesium Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of LED epitaxial slice and its manufacture method, belong to technical field of semiconductors.Epitaxial wafer includes substrate and the cushion, undoped gallium nitride layer, n type gallium nitride layer, stress release layer, multiple quantum well layer, electronic barrier layer, p-type gallium nitride layer and the N-type contact layer that are sequentially laminated on substrate.The present invention on p-type gallium nitride layer by being laminated N-type contact layer, the N type dopant that N-type contact layer can be mixed is more, the activation rate of N type dopant is also higher, the electron amount provided in N-type contact layer is far more than the number of cavities provided in p-type contact layer, the carrier quantity that the electric current that P-type electrode is injected is delivered to p-type gallium nitride layer in contact layer greatly increases, and the resistance of contact layer greatly reduces, in the case where Injection Current is constant, LED operating voltage is greatly reduced, and LED light efficiency improves；Reduced with caused heat, the requirement to LED encapsulation material is reduced, and production cost is minimized.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of LED epitaxial slice and its manufacture method.
Background technology
Light emitting diode (English：Light Emitting Diode, referred to as：LED) have energy-efficient, green
Advantage, had a wide range of applications in fields such as traffic instruction, outdoor total colourings.Gallium nitride-based material (including indium gallium nitrogen, nitridation
Gallium, aluminum gallium nitride, aluminium indium gallium nitrogen) be LED excellent material, have that energy gap is big, electron drift velocity is not easy saturation, breakdown field
It is powerful, dielectric constant is small, good heat conductivity, high temperature resistant, it is anticorrosive the advantages that.
Chip is the most important parts of LED, and epitaxial wafer is the raw material for manufacturing chip.Existing gallium nitride based LED
Epitaxial wafer includes Sapphire Substrate and stacks gradually cushion on a sapphire substrate, undoped gallium nitride layer, N-type nitridation
Gallium layer, multiple quantum well layer, p-type gallium nitride layer and p-type contact layer.Wherein, p-type contact layer is passed through using magnesium as P-type dopant
Activated magnesium provide hole the electric current of electrode injection is delivered to p-type gallium nitride layer as carrier, realize p-type gallium nitride layer with
Ohmic contact between electrode.
During the present invention is realized, inventor has found that prior art at least has problems with：
It can mix that the magnesium of p-type contact layer is less, it is relatively low plus the activation rate of magnesium in itself, therefore provided in p-type contact layer
Carrier (i.e. hole) negligible amounts, it is not easy to form preferable Ohmic contact, cause LED operating voltage higher, produce
Heat it is more.It is insulator in itself plus Sapphire Substrate, there is relatively low thermal conductivity, so to LED encapsulating material
It is it is required that higher, it is necessary to possess high radiating and resistant to elevated temperatures property, so as to cause the overall production costs of LED higher.
The content of the invention
In order to solve problem of the prior art, the embodiments of the invention provide a kind of LED epitaxial slice and its manufacture
Method.The technical scheme is as follows：
On the one hand, the embodiments of the invention provide a kind of LED epitaxial slice, the LED epitaxial slice bag
Include substrate and stack gradually cushion over the substrate, undoped gallium nitride layer, n type gallium nitride layer, stress release layer,
Multiple quantum well layer, electronic barrier layer and p-type gallium nitride layer, the LED epitaxial slice also include being layered in the p-type nitrogen
Change the N-type contact layer on gallium layer.
Alternatively, the N-type contact layer is the gallium nitride layer of n-type doping.
Alternatively, the thickness of the N-type contact layer is 2nm~20nm.
Alternatively, the doping concentration of N type dopant is 1 × 10 in the N-type contact layer19cm-3~9 × 1019cm-3。
On the other hand, the embodiments of the invention provide a kind of manufacture method of LED epitaxial slice, the manufacturer
Method includes：
One substrate is provided；
Cushion, undoped gallium nitride layer, n type gallium nitride layer, stress release layer, volume are sequentially formed over the substrate
Sub- well layer, electronic barrier layer, p-type gallium nitride layer and N-type contact layer.
Alternatively, the growth temperature of the N-type contact layer is 700 DEG C~800 DEG C.
Alternatively, the growth pressure of the N-type contact layer is 100torr~300torr.
Alternatively, the N-type contact layer is the gallium nitride layer of n-type doping.
Alternatively, the thickness of the N-type contact layer is 2nm~20nm.
Alternatively, the doping concentration of N type dopant is 1 × 10 in the N-type contact layer19cm-3~9 × 1019cm-3。
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：
By being laminated N-type contact layer on p-type gallium nitride layer, because N type dopant can perfectly be doped to nitrogen very much
Change in gallium material, the electronics that is provided in N-type contact layer as carrier quantity far more than the hole work provided in p-type contact layer
For the quantity of carrier, Ohmic contact can more efficiently be formed between electrode using N-type contact layer, reduce contact layer
Resistance, in the case where Injection Current is constant, LED operating voltage is greatly reduced, and LED light efficiency (luminous power/electrical power) carries
It is high；Reduced with caused heat, the requirement to LED encapsulation material is reduced, and production cost is minimized.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, make required in being described below to embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is a kind of structural representation for LED epitaxial slice that the embodiment of the present invention one provides；
Fig. 2 is a kind of flow chart of the manufacture method for LED epitaxial slice that the embodiment of the present invention one provides；
Fig. 3 is a kind of flow chart of the manufacture method for LED epitaxial slice that the embodiment of the present invention three provides.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiments of the invention provide a kind of LED epitaxial slice, referring to Fig. 1, the epitaxial wafer include substrate 1 and
Stack gradually cushion 2, undoped gallium nitride layer 3, n type gallium nitride layer 4, stress release layer 5, MQW on substrate 1
Layer 6, electronic barrier layer 7, p-type gallium nitride layer 8 and N-type contact layer 9.
The embodiment of the present invention on p-type gallium nitride layer by being laminated N-type contact layer, because N type dopant can be very complete
Beautiful is doped in gallium nitride material, the electronics provided in N-type contact layer as carrier quantity far more than in p-type contact layer
Quantity of the hole of offer as carrier, Ohmic contact can more efficiently be formed between electrode using N-type contact layer,
The resistance of contact layer is reduced, in the case where Injection Current is constant, LED operating voltage is greatly reduced, LED light efficiency (light work(
Rate/electrical power) improve；Reduced with caused heat, the requirement to LED encapsulation material is reduced, and production cost is minimized.
Specifically, N-type contact layer can be n-type doping (such as doping SiH4) gallium nitride layer.Used with p-type gallium nitride layer
Same material (gallium nitride), Lattice Matching is preferable, can avoid producing stress and defect and influenceing to light.
Alternatively, the thickness of N-type contact layer can be 2nm~20nm.If the thickness of N-type contact layer is less than 2nm, can not
Play a part of contact layer；If the thickness of N-type contact layer is more than 20nm, another in addition to n type gallium nitride layer can be formed
Electronics provides layer, destroys LED structure, causes non-radiative luminous and reduces luminous efficiency.
Alternatively, the doping concentration of N type dopant can be 1 × 10 in N-type contact layer19cm-3~9 × 1019cm-3.If N
The doping concentration of N type dopant is less than 1 × 10 in type contact layer19cm-3, then the electron amount provided in N-type contact layer is less,
Not having reduces the effect of LED operation voltage；If the doping concentration of N type dopant is more than 9 × 10 in N-type contact layer19cm-3, then
Cause the growth quality of N-type contact layer poor, influence luminous efficiency.
Specifically, substrate can be Sapphire Substrate；Cushion can be gallium nitride layer, or aln layer；Should
Power releasing layer includes multiple indium gallium nitrogen layers and multiple gallium nitride layers, multiple indium gallium nitrogen layers and multiple gallium nitride layers are alternately laminated sets
Put；Multiple quantum well layer includes multiple indium gallium nitrogen quantum well layers and multiple gallium nitride quantum barrier layers, multiple indium gallium nitrogen quantum well layers and
Multiple alternately laminated settings of gallium nitride quantum barrier layer；Electronic barrier layer can be gallium nitride layer.
More specifically, the thickness of cushion can be 15nm~30nm；The thickness of undoped gallium nitride layer can be 1.5 μm
~2.5 μm；The thickness of n type gallium nitride layer can be 0.5 μm~1.5 μm；In stress release layer, the thickness of indium gallium nitrogen layer can be with
For 1nm~3nm, the thickness of gallium nitride layer can be 20nm~40nm, and the quantity of gallium nitride layer is identical with the quantity of indium gallium nitrogen layer,
The quantity of indium gallium nitrogen layer can be 3~10；In multiple quantum well layer, the thickness of indium gallium nitrogen quantum well layer can be 2nm~4nm,
The thickness of gallium nitride quantum barrier layer can be 10nm~15nm, the quantity of gallium nitride quantum barrier layer and the number of indium gallium nitrogen quantum well layer
Measure identical, the quantity of indium gallium nitrogen quantum well layer can be 8~10；The thickness of electronic barrier layer can be 30nm~50nm；P
The thickness of type gallium nitride layer can be 1.5 μm~2.5 μm.
Embodiment two
The embodiments of the invention provide a kind of manufacture method of LED epitaxial slice, is carried suitable for manufacture embodiment one
The epitaxial wafer of confession.Referring to Fig. 2, the manufacture method includes：
Step 201：One substrate is provided.
Step 202：Sequentially formed on substrate cushion, undoped gallium nitride layer, n type gallium nitride layer, stress release layer,
Multiple quantum well layer, electronic barrier layer, p-type gallium nitride layer and N-type contact layer.
The embodiment of the present invention on p-type gallium nitride layer by being laminated N-type contact layer, because N type dopant can be very complete
Beautiful is doped in gallium nitride material, the electronics provided in N-type contact layer as carrier quantity far more than in p-type contact layer
Quantity of the hole of offer as carrier, Ohmic contact can more efficiently be formed between electrode using N-type contact layer,
The resistance of contact layer is reduced, in the case where Injection Current is constant, LED operating voltage is greatly reduced, LED light efficiency (light work(
Rate/electrical power) improve；Reduced with caused heat, the requirement to LED encapsulation material is reduced, and production cost is minimized.
Alternatively, the growth temperature of N-type contact layer can be 700 DEG C~800 DEG C.If the growth temperature of N-type contact layer is low
In 700 DEG C, then growth quality is poor；If the growth temperature of N-type contact layer is higher than 800 DEG C, P in p-type gallium nitride layer can be influenceed
The activation of type dopant, reduce LED luminous efficiency.
Alternatively, the growth pressure of N-type contact layer can be 100torr~300torr.If the growth pressure of N-type contact layer
Power is less than 100torr, then growth rate is too slow, influences LED production capacity；If the growth pressure of N-type contact layer is higher than 300torr,
It can then cause the angularity of epitaxial wafer higher.
Specifically, the growth temperature of cushion can be 500 DEG C~580 DEG C, growth pressure can be 100torr~
250torr.The growth temperature of undoped gallium nitride layer can be 1200 DEG C~1250 DEG C, growth pressure can be 200torr~
500torr.The growth temperature of n type gallium nitride layer can be 1200 DEG C~1250 DEG C, growth pressure can be 150torr~
300torr.In stress release layer, the growth temperature of indium gallium nitrogen layer can be 750 DEG C~850 DEG C, and growth pressure can be
200torr~300torr；The growth temperature of gallium nitride layer can be 750 DEG C~850 DEG C, growth pressure can be 200torr~
300torr.In multiple quantum well layer, the growth temperature of indium gallium nitrogen quantum well layer can be 830 DEG C~880 DEG C, and growth pressure can
Think 200torr~400torr；The growth temperature of gallium nitride quantum barrier layer can be 920 DEG C~980 DEG C, and growth pressure can be with
For 200torr~400torr.The growth temperature of electronic barrier layer can be 1050 DEG C~1150 DEG C, and growth pressure can be
100torr~200torr.The growth temperature of p-type gallium nitride layer can be 1200 DEG C~1250 DEG C, and growth pressure can be
200torr~600torr.
Embodiment three
The embodiments of the invention provide the manufacturer that a kind of manufacture method of LED epitaxial slice, the present embodiment provide
Method is a kind of specific implementation for the manufacture method that embodiment two provides.Referring to Fig. 3, the manufacture method includes：
Step 301：Sapphire Substrate is carried out under pure hydrogen atmosphere to 1050 DEG C of annealing, and in annealing
After carry out nitrogen treatment.
Step 302：It is 540 DEG C, pressure 175torr to control temperature, and growth thickness is 25nm's on a sapphire substrate
Gallium nitride layer, form cushion.
Alternatively, after step 302, the preparation method can also include：
Stopping is passed through TMGa sources, and it is 1040 DEG C to control temperature, and the in-situ annealing of 8 minutes is carried out to cushion.
Step 303：It is 1040 DEG C, growth pressure 300torr to control growth temperature, and growth thickness is 1 μ on the buffer layer
M undoped gallium nitride layer.
Step 304：It is 1225 DEG C to control growth temperature, growth pressure 225torr, is grown on undoped gallium nitride layer
Thickness is 2 μm of n type gallium nitride layer.
Step 305：It is 800 DEG C, growth pressure 250torr to control growth temperature, the growth stress on n type gallium nitride layer
Releasing layer.
In the present embodiment, stress release layer includes the 6 indium gallium nitrogen layers and 6 gallium nitride layers of alternately laminated setting, indium
The thickness of gallium nitrogen layer is 2nm；The thickness of gallium nitride layer is 30nm.
Step 306：It is 300torr to control growth pressure, and multiple quantum well layer is grown on stress release layer.
In the present embodiment, multiple quantum well layer includes the 9 indium gallium nitrogen quantum well layers and 9 gallium nitride of alternately laminated setting
Quantum barrier layer, the thickness of indium gallium nitrogen quantum well layer is 2.5nm, and growth temperature is 850 DEG C；The thickness of gallium nitride quantum barrier layer is
15nm, growth temperature are 950 DEG C.
Step 307：It is 1100 DEG C, growth pressure 150torr to control growth temperature, the growth thickness on multiple quantum well layer
For 80nm p-type gallium nitride layer, electronic barrier layer is formed.
Step 308：It is 1240 DEG C, growth pressure 350torr to control growth temperature, the growth thickness on electronic barrier layer
For 0.2 μm of p-type gallium nitride layer.
Step 309：It is 760 DEG C, growth pressure 200torr to control growth temperature, the growth thickness on p-type gallium nitride layer
It is 5 × 10 for 10nm, doping concentration19cm-3N type gallium nitride layer, formed N-type contact layer.
In the present embodiment, whole process is using metallo-organic compound chemical gaseous phase deposition (English：Meta1Organic
Chemical Vapor Deposition, referred to as：MOCVD) reaction chamber is realized, high-purity hydrogen (H is used when realizing2) or nitrogen
Gas (N2) carrier gas is used as, using trimethyl gallium (TMGa) as gallium source, high-purity ammonia (NH3) nitrogen source is used as, trimethyl indium is as indium
Source, for trimethyl aluminium as silicon source, N type dopant selects silane, and P-type dopant selects two luxuriant magnesium.
It should be noted that after epitaxial growth terminates, first by the temperature control of reaction chamber 700 DEG C~800 DEG C it
Between, the annealing of 5 minutes~15 minutes is carried out under pure nitrogen gas atmosphere, then the temperature of reaction chamber is down to room temperature.Then, will
Single chip is made through semiconducter process such as over cleaning, deposition, photoetching and etchings in epitaxial wafer.
It should be noted that in other embodiments, the doping concentration of N type dopant, N-type contact layer in N-type contact layer
Thickness, the growth temperature of N-type contact layer, the growth temperature of the growth pressure of N-type contact layer and other each layers, growth pressure
The parameter such as power and thickness can take other values.
The thickness of the doping concentration of N type dopant and N-type contact layer in N-type contact layer is taken into different value, keeps N-type contact
The other parameters and other layers of parameters of layer are constant, and chip made of the epitaxial wafer of manufacture is detected under identical electric current
Operating voltage, testing result is as shown in Table 1：
Table one
As can be seen from Table I, in N-type contact layer the doping concentration of N type dopant 5 × 1019cm-3Left and right, N-type contact
The thickness of layer is relatively low in 10nm or so, the operating voltage of chip.
The growth pressure of the growth temperature of N-type contact layer and N-type contact layer is taken into different value, keeps N-type contact layer its
Its parameter and other layers of parameters are constant, and chip made of the epitaxial wafer of manufacture is detected to work electricity under identical electric current
Pressure, testing result is as shown in Table 2：
Table two
| The growth temperature of N-type contact layer | The growth pressure of N-type contact layer | The operating voltage of chip |
| 700℃ | 100torr | 3.42V |
| 700℃ | 200torr | 3.34V |
| 700℃ | 300torr | 3.33V |
| 760℃ | 100torr | 3.22V |
| 760℃ | 200torr | 3.18V |
| 760℃ | 300torr | 3.20V |
| 800℃ | 100torr | 3.26V |
| 800℃ | 200torr | 3.24V |
| 800℃ | 300torr | 3.30V |
As can be seen from Table II, at 760 DEG C or so, the growth pressure of N-type contact layer exists the growth temperature of N-type contact layer
200torr or so, the operating voltage of chip are relatively low.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc., it should be included in the scope of the protection.
Claims (10)
1. a kind of LED epitaxial slice, the LED epitaxial slice includes substrate and is sequentially laminated on the substrate
On cushion, undoped gallium nitride layer, n type gallium nitride layer, stress release layer, multiple quantum well layer, electronic barrier layer and p-type nitrogen
Change gallium layer, it is characterised in that the LED epitaxial slice also includes the N-type contact being layered on the p-type gallium nitride layer
Layer.
2. LED epitaxial slice according to claim 1, it is characterised in that the N-type contact layer is n-type doping
Gallium nitride layer.
3. LED epitaxial slice according to claim 1 or 2, it is characterised in that the thickness of the N-type contact layer is
2nm~20nm.
4. LED epitaxial slice according to claim 1 or 2, it is characterised in that N-type is mixed in the N-type contact layer
Miscellaneous dose of doping concentration is 1 × 1019cm-3~9 × 1019cm-3。
5. a kind of manufacture method of LED epitaxial slice, it is characterised in that the manufacture method includes：
One substrate is provided；
Cushion, undoped gallium nitride layer, n type gallium nitride layer, stress release layer, MQW are sequentially formed over the substrate
Layer, electronic barrier layer, p-type gallium nitride layer and N-type contact layer.
6. manufacture method according to claim 5, it is characterised in that the growth temperature of the N-type contact layer be 700 DEG C~
800℃。
7. the manufacture method according to claim 5 or 6, it is characterised in that the growth pressure of the N-type contact layer is
100torr~300torr.
8. the manufacture method according to claim 5 or 6, it is characterised in that the N-type contact layer is the nitridation of n-type doping
Gallium layer.
9. the manufacture method according to claim 5 or 6, it is characterised in that the thickness of the N-type contact layer be 2nm~
20nm。
10. the manufacture method according to claim 5 or 6, it is characterised in that N type dopant mixes in the N-type contact layer
Miscellaneous concentration is 1 × 1019cm-3~9 × 1019cm-3。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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