CN107359101B - 带电粒子射束产生器中的高电压屏蔽和冷却 - Google Patents

带电粒子射束产生器中的高电压屏蔽和冷却 Download PDF

Info

Publication number
CN107359101B
CN107359101B CN201710450157.8A CN201710450157A CN107359101B CN 107359101 B CN107359101 B CN 107359101B CN 201710450157 A CN201710450157 A CN 201710450157A CN 107359101 B CN107359101 B CN 107359101B
Authority
CN
China
Prior art keywords
configuration
charged particles
electrode
cooling
high voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710450157.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN107359101A (zh
Inventor
A.H.V.范维恩
W.H.厄尔巴努斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of CN107359101A publication Critical patent/CN107359101A/zh
Application granted granted Critical
Publication of CN107359101B publication Critical patent/CN107359101B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3007Electron or ion-optical systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302Controlling tubes by external information, e.g. program control
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177Multi-beam, e.g. fly's eye, comb probe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002Cooling arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/026Shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/026Shields
    • H01J2237/0262Shields electrostatic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/026Shields
    • H01J2237/0264Shields magnetic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16Vessels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18Vacuum control means
    • H01J2237/182Obtaining or maintaining desired pressure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18Vacuum control means
    • H01J2237/188Differential pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Sources, Ion Sources (AREA)
CN201710450157.8A 2012-05-14 2013-05-14 带电粒子射束产生器中的高电压屏蔽和冷却 Active CN107359101B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646839P 2012-05-14 2012-05-14
US61/646,839 2012-05-14
CN201380036065.5A CN104520968B (zh) 2012-05-14 2013-05-14 带电粒子光刻系统和射束产生器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201380036065.5A Division CN104520968B (zh) 2012-05-14 2013-05-14 带电粒子光刻系统和射束产生器

Publications (2)

Publication Number Publication Date
CN107359101A CN107359101A (zh) 2017-11-17
CN107359101B true CN107359101B (zh) 2019-07-12

Family

ID=48463976

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201710450157.8A Active CN107359101B (zh) 2012-05-14 2013-05-14 带电粒子射束产生器中的高电压屏蔽和冷却
CN201380036057.0A Pending CN104428866A (zh) 2012-05-14 2013-05-14 带电粒子光刻系统和射束产生器
CN201380036065.5A Active CN104520968B (zh) 2012-05-14 2013-05-14 带电粒子光刻系统和射束产生器

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201380036057.0A Pending CN104428866A (zh) 2012-05-14 2013-05-14 带电粒子光刻系统和射束产生器
CN201380036065.5A Active CN104520968B (zh) 2012-05-14 2013-05-14 带电粒子光刻系统和射束产生器

Country Status (8)

Country Link
US (2) US9653261B2 (https=)
EP (1) EP2852966A1 (https=)
JP (3) JP6239596B2 (https=)
KR (2) KR101961914B1 (https=)
CN (3) CN107359101B (https=)
NL (4) NL2010802C2 (https=)
TW (2) TWI604493B (https=)
WO (2) WO2013171214A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6590811B2 (ja) * 2013-12-30 2019-10-16 エーエスエムエル ネザーランズ ビー.ブイ. 陰極構成体、電子銃、及びこのような電子銃を有するリソグラフィシステム
EP3155644A4 (en) * 2014-06-13 2018-02-28 Intel Corporation Ebeam align on the fly
JP2017135218A (ja) * 2016-01-26 2017-08-03 株式会社アドバンテスト 荷電粒子ビームレンズ装置、荷電粒子ビームカラム、および荷電粒子ビーム露光装置
JP2017139339A (ja) * 2016-02-04 2017-08-10 株式会社アドバンテスト 露光装置
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
US10453645B2 (en) * 2016-12-01 2019-10-22 Applied Materials Israel Ltd. Method for inspecting a specimen and charged particle multi-beam device
KR20250022249A (ko) * 2017-01-18 2025-02-14 피닉스 엘엘씨 고출력 이온빔 발생기 시스템 및 방법
US10176967B2 (en) * 2017-02-23 2019-01-08 Hermes Microvision, Inc. Load lock system for charged particle beam imaging
NL2021217B1 (en) * 2018-06-29 2020-01-07 Asml Netherlands Bv Substrate exposure system and a frame therefore
DE102019005362A1 (de) * 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
JP2021039880A (ja) 2019-09-03 2021-03-11 株式会社日立ハイテク 荷電粒子線装置
KR20230065267A (ko) * 2020-09-07 2023-05-11 에이에스엠엘 네델란즈 비.브이. 전자기 차폐부를 포함하는 전자-광학 조립체
CN118974871A (zh) * 2022-04-12 2024-11-15 华为技术有限公司 一种可调整的多电极准直装置
EP4307338B1 (en) * 2022-07-12 2024-11-27 Comet AG Radio frequency generator

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US3924136A (en) * 1975-02-18 1975-12-02 Stanford Research Inst Charged particle apodized pattern imaging and exposure system
US4142133A (en) * 1976-10-20 1979-02-27 Balandin Genrikh D Cathode-ray tube with variable energy of beam electrons
DE3231036A1 (de) * 1982-08-20 1984-02-23 Max Planck Gesellschaft Kombinierte elektrostatische objektiv- und emissionslinse
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
AU6449994A (en) 1993-04-30 1994-11-21 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
JP3253429B2 (ja) 1993-09-17 2002-02-04 富士通株式会社 電子ビーム装置
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
JP3763446B2 (ja) * 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
EP1245036B1 (en) * 1999-12-13 2013-06-19 Semequip, Inc. Ion implantation ion source
JP4401614B2 (ja) * 2000-04-04 2010-01-20 株式会社アドバンテスト 多軸電子レンズを用いたマルチビーム露光装置、複数の電子ビームを集束する多軸電子レンズ、半導体素子製造方法
JP3728217B2 (ja) * 2000-04-27 2005-12-21 キヤノン株式会社 荷電粒子線露光装置およびデバイス製造方法
GB0029040D0 (en) * 2000-11-29 2001-01-10 Micromass Ltd Orthogonal time of flight mass spectrometer
JP2002217091A (ja) 2001-01-19 2002-08-02 Nikon Corp 荷電粒子線露光装置
JP4156809B2 (ja) * 2001-01-31 2008-09-24 株式会社アドバンテスト 電子ビーム露光装置及び電子レンズ
US6797953B2 (en) 2001-02-23 2004-09-28 Fei Company Electron beam system using multiple electron beams
US6768125B2 (en) 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
EP1532649A2 (en) * 2002-06-15 2005-05-25 NFAB Limited A particle beam generator
JP2004063547A (ja) * 2002-07-25 2004-02-26 Nikon Corp 真空雰囲気下露光装置
EP1388883B1 (en) * 2002-08-07 2013-06-05 Fei Company Coaxial FIB-SEM column
EP2302457B1 (en) 2002-10-25 2016-03-30 Mapper Lithography Ip B.V. Lithography system
CN101414534B (zh) 2002-10-30 2012-10-03 迈普尔平版印刷Ip有限公司 电子束曝光系统
JP2004214480A (ja) 2003-01-07 2004-07-29 Nikon Corp 露光装置
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
JP4113032B2 (ja) * 2003-04-21 2008-07-02 キヤノン株式会社 電子銃及び電子ビーム露光装置
ATE524822T1 (de) 2003-05-28 2011-09-15 Mapper Lithography Ip Bv Belichtungsverfahren für strahlen aus geladenen teilchen
EP1491955A1 (en) * 2003-06-27 2004-12-29 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
EP1498930A1 (en) * 2003-07-14 2005-01-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with multi-source array
DE602004010824T2 (de) 2003-07-30 2008-12-24 Mapper Lithography Ip B.V. Modulator-schaltkreise
GB2406704B (en) * 2003-09-30 2007-02-07 Ims Nanofabrication Gmbh Particle-optic electrostatic lens
JP2005127800A (ja) 2003-10-22 2005-05-19 Toshiba Corp 電子線照射装置と照射方法および電子線描画装置
JP4406311B2 (ja) 2004-03-31 2010-01-27 株式会社荏原製作所 エネルギー線照射装置およびそれを用いたパタン作成方法
JP4547997B2 (ja) 2004-06-04 2010-09-22 株式会社ニコン 真空容器、露光装置、及び検査装置
CN100477134C (zh) * 2004-10-21 2009-04-08 Hoya株式会社 微粒子沉积装置、微粒子沉积方法及发光元件的制造方法
JP2006139958A (ja) * 2004-11-10 2006-06-01 Toshiba Corp 荷電ビーム装置
JP3929459B2 (ja) * 2004-11-11 2007-06-13 株式会社日立ハイテクノロジーズ 荷電粒子線露光装置
GB0425290D0 (en) * 2004-11-17 2004-12-15 Eastham Derek A Focussing masks
WO2006053358A1 (en) * 2004-11-17 2006-05-26 Ims Nanofabrication Ag Pattern lock system for particle-beam exposure apparatus
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
JP4732917B2 (ja) * 2006-02-15 2011-07-27 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡及び欠陥検出装置
US7550739B2 (en) 2006-03-30 2009-06-23 Tokyo Electron Limited Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate
JP4533344B2 (ja) 2006-05-19 2010-09-01 キヤノン株式会社 真空装置、露光装置、及びデバイス製造方法
EP1983548A1 (en) 2007-04-20 2008-10-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Emitter chamber, charged particle apparatus and method for operating same
JP5497980B2 (ja) * 2007-06-29 2014-05-21 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置、及び試料検査方法
CN101784954B (zh) * 2007-08-24 2015-03-25 卡尔蔡司Smt有限责任公司 可控光学元件以及用热致动器操作光学元件的方法和半导体光刻的投射曝光设备
JP5408674B2 (ja) 2008-02-26 2014-02-05 マッパー・リソグラフィー・アイピー・ビー.ブイ. 投影レンズ構成体
KR101570974B1 (ko) 2008-02-26 2015-11-23 마퍼 리쏘그라피 아이피 비.브이. 투사 렌즈 배열체
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
CN102105960B (zh) 2008-05-23 2014-01-29 迈普尔平版印刷Ip有限公司 成像系统
EP2297766B1 (en) 2008-06-04 2016-09-07 Mapper Lithography IP B.V. Writing strategy
JP5250350B2 (ja) * 2008-09-12 2013-07-31 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
KR101649106B1 (ko) 2008-10-01 2016-08-19 마퍼 리쏘그라피 아이피 비.브이. 정전기 렌즈 구조
US10054754B2 (en) * 2009-02-04 2018-08-21 Nikon Corporation Thermal regulation of vibration-sensitive objects with conduit circuit having liquid metal, pump, and heat exchanger
DE102009009221A1 (de) * 2009-02-17 2010-08-26 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Halbleiterlithographie mit einem Aktuatorsystem
CN102422380A (zh) * 2009-02-22 2012-04-18 迈普尔平版印刷Ip有限公司 带电粒子微影设备及真空腔室中产生真空的方法
KR20110139699A (ko) 2009-02-22 2011-12-29 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 장치 및 기판 핸들링 배열체
EP2399272A1 (en) 2009-02-22 2011-12-28 Mapper Lithography IP B.V. A method and arrangement for realizing a vacuum in a vacuum chamber
JP2010282799A (ja) 2009-06-03 2010-12-16 Canon Inc 荷電粒子線描画装置およびデバイス製造方法
DE112010002551B4 (de) * 2009-06-16 2019-10-31 Hitachi High-Technologies Corporation Geladene teilchen abstrahlende vorrichtung
US8624478B2 (en) 2009-10-09 2014-01-07 Mapper Lithography Ip B.V. High voltage shielding arrangement of a charged particle lithography system
GB201003566D0 (en) * 2010-03-03 2010-04-21 Ilika Technologies Ltd Mass spectrometry apparatus and methods
EP2595174B8 (en) * 2010-06-08 2019-01-16 Micromass UK Limited Mass spectrometer comprising two Time of Flight analysers for analysing both positive and negative ions
WO2012062932A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
US8604411B2 (en) 2010-11-13 2013-12-10 Mapper Lithography Ip B.V. Charged particle beam modulator
WO2012062854A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
JP5709535B2 (ja) * 2011-01-07 2015-04-30 キヤノン株式会社 電子ビーム描画装置、およびそれを用いた物品の製造方法
JP5822535B2 (ja) * 2011-05-16 2015-11-24 キヤノン株式会社 描画装置、および、物品の製造方法
JP2013008534A (ja) * 2011-06-23 2013-01-10 Canon Inc 荷電粒子線レンズ用電極
JP2013171925A (ja) * 2012-02-20 2013-09-02 Canon Inc 荷電粒子線装置、それを用いた物品の製造方法
EP2850635B1 (en) 2012-05-14 2016-04-27 Mapper Lithography IP B.V. Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method
JP2014116518A (ja) * 2012-12-11 2014-06-26 Canon Inc 描画装置及び物品の製造方法
CN107407595B (zh) 2015-04-03 2018-09-07 株式会社日立高新技术 光量检测装置、利用其的免疫分析装置及电荷粒子束装置

Also Published As

Publication number Publication date
JP6219374B2 (ja) 2017-10-25
CN104520968B (zh) 2017-07-07
EP2852966A1 (en) 2015-04-01
TW201401331A (zh) 2014-01-01
JP2015516690A (ja) 2015-06-11
JP2018041964A (ja) 2018-03-15
WO2013171214A1 (en) 2013-11-21
US9653261B2 (en) 2017-05-16
KR20150010994A (ko) 2015-01-29
KR102023056B1 (ko) 2019-09-20
CN104428866A (zh) 2015-03-18
JP6239596B2 (ja) 2017-11-29
NL2013320C2 (en) 2015-06-15
KR101961914B1 (ko) 2019-03-25
US10037864B2 (en) 2018-07-31
US20150124229A1 (en) 2015-05-07
NL2013320A (en) 2014-11-24
TW201401330A (zh) 2014-01-01
NL2010797C2 (en) 2014-08-21
NL2013321A (en) 2014-11-06
NL2013321C2 (en) 2015-05-07
TWI604493B (zh) 2017-11-01
CN107359101A (zh) 2017-11-17
NL2010802A (en) 2013-11-18
JP6430606B2 (ja) 2018-11-28
KR20150010993A (ko) 2015-01-29
NL2010797A (en) 2013-11-18
CN104520968A (zh) 2015-04-15
JP2015517735A (ja) 2015-06-22
WO2013171229A1 (en) 2013-11-21
NL2010802C2 (en) 2014-08-25
US20170250053A1 (en) 2017-08-31

Similar Documents

Publication Publication Date Title
CN107359101B (zh) 带电粒子射束产生器中的高电压屏蔽和冷却
JP6049627B2 (ja) 中間チャンバを備えた荷電粒子リソグラフィシステム
TW202235180A (zh) 用以移除和/或避免帶電粒子束系統中的汙染的方法和系統
US12387903B2 (en) Aberration correction in charged particle system
US10651005B2 (en) Innovative source assembly for ion beam production
KR20250107842A (ko) 하전 입자 광학 디바이스, 평가 장치, 샘플 평가 방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20190506

Address after: Holland Weide Eindhoven

Applicant after: ASML Holland Co., Ltd.

Address before: About Holland

Applicant before: Mapper Lithography IP B. V.

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant