CN107251239B - 具有应变改性表面有源区域的iii价氮化物纳米线和其制造方法 - Google Patents

具有应变改性表面有源区域的iii价氮化物纳米线和其制造方法 Download PDF

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CN107251239B
CN107251239B CN201580050665.6A CN201580050665A CN107251239B CN 107251239 B CN107251239 B CN 107251239B CN 201580050665 A CN201580050665 A CN 201580050665A CN 107251239 B CN107251239 B CN 107251239B
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CN107251239A (zh
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琳达·罗马诺
王平
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    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
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    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H20/01—Manufacture or treatment
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    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H20/01—Manufacture or treatment
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    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
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    • H10H20/80—Constructional details
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    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
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    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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CN201580050665.6A 2014-08-12 2015-08-07 具有应变改性表面有源区域的iii价氮化物纳米线和其制造方法 Expired - Fee Related CN107251239B (zh)

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US201462036363P 2014-08-12 2014-08-12
US62/036,363 2014-08-12
PCT/US2015/044245 WO2016025325A1 (en) 2014-08-12 2015-08-07 Iii-nitride nanowire led with strain modified surface active region and method of making thereof

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EP (1) EP3180806A4 (https=)
JP (1) JP6505208B2 (https=)
KR (1) KR20170066319A (https=)
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US11538852B2 (en) 2019-04-23 2022-12-27 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US12471413B2 (en) 2019-04-23 2025-11-11 Osram Opto Semiconductors Gmbh LED module, LED display module and method of manufacturing the same
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KR102939949B1 (ko) 2019-05-23 2026-03-17 에이엠에스-오스람 인터내셔널 게엠베하 조명 조립체, 광 안내 조립체 및 방법
US10930747B2 (en) * 2019-06-04 2021-02-23 Nxp B.V. Semiconductor device with an encircled electrode
JP7336767B2 (ja) * 2019-10-03 2023-09-01 株式会社小糸製作所 半導体発光素子および半導体発光素子の製造方法
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US10205054B2 (en) 2019-02-12
US20180145218A1 (en) 2018-05-24
EP3180806A4 (en) 2018-03-07
EP3180806A1 (en) 2017-06-21
CN107251239A (zh) 2017-10-13
JP2017525159A (ja) 2017-08-31
US20170236975A1 (en) 2017-08-17
JP6505208B2 (ja) 2019-04-24
WO2016025325A1 (en) 2016-02-18
WO2016025325A9 (en) 2017-03-23
KR20170066319A (ko) 2017-06-14
US9882086B2 (en) 2018-01-30

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