CN107251217B - 用于集成电路封装的导电柱保护 - Google Patents

用于集成电路封装的导电柱保护 Download PDF

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Publication number
CN107251217B
CN107251217B CN201680010443.6A CN201680010443A CN107251217B CN 107251217 B CN107251217 B CN 107251217B CN 201680010443 A CN201680010443 A CN 201680010443A CN 107251217 B CN107251217 B CN 107251217B
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Prior art keywords
conductive
substrate
dielectric
pillars
integrated circuit
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Expired - Fee Related
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CN201680010443.6A
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English (en)
Chinese (zh)
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CN107251217A (zh
Inventor
J·傅
C-K·金
M·阿尔德雷特
M·P·沙哈
D·R·雪莉
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Qualcomm Inc
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Qualcomm Inc
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
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    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1041—Special adaptations for top connections of the lowermost container, e.g. redistribution layer, integral interposer
    • H—ELECTRICITY
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    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Combinations Of Printed Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Wire Bonding (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
CN201680010443.6A 2015-02-20 2016-02-18 用于集成电路封装的导电柱保护 Expired - Fee Related CN107251217B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562118886P 2015-02-20 2015-02-20
US62/118,886 2015-02-20
US14/859,318 US9768108B2 (en) 2015-02-20 2015-09-20 Conductive post protection for integrated circuit packages
US14/859,318 2015-09-20
PCT/US2016/018504 WO2016134165A1 (en) 2015-02-20 2016-02-18 Conductive post protection for integrated circuit packages

Publications (2)

Publication Number Publication Date
CN107251217A CN107251217A (zh) 2017-10-13
CN107251217B true CN107251217B (zh) 2021-03-12

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Country Link
US (1) US9768108B2 (enExample)
EP (1) EP3259776A1 (enExample)
JP (1) JP6789228B2 (enExample)
KR (1) KR102469282B1 (enExample)
CN (1) CN107251217B (enExample)
BR (1) BR112017017746A2 (enExample)
SG (1) SG11201705672XA (enExample)
WO (1) WO2016134165A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102397905B1 (ko) 2017-12-27 2022-05-13 삼성전자주식회사 인터포저 기판 및 반도체 패키지
US11791276B2 (en) * 2021-04-08 2023-10-17 Qualcomm Incorporated Package comprising passive component between substrates for improved power distribution network (PDN) performance
WO2023135720A1 (ja) * 2022-01-14 2023-07-20 キヤノン株式会社 モジュールおよび機器
US20250323136A1 (en) * 2024-04-12 2025-10-16 Qualcomm Incorporated Integrated circuit (ic) package including two substrates and vertical interconnects coupling the two substrates, the vertical interconnects comprising a metal ball and metal pin combination to address an increased distance between substrates

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104051389A (zh) * 2013-03-12 2014-09-17 台湾积体电路制造股份有限公司 具有焊盘连接件上通孔的叠层封装件

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208698A (ja) * 1999-01-18 2000-07-28 Toshiba Corp 半導体装置
JP2003347501A (ja) * 2002-05-23 2003-12-05 Hitachi Cable Ltd 半導体モジュール及びそれに用いる配線板、ならびに半導体モジュールの製造方法及び配線板の製造方法
JP3973624B2 (ja) * 2003-12-24 2007-09-12 富士通株式会社 高周波デバイス
JP4396839B2 (ja) * 2004-08-11 2010-01-13 日本電気株式会社 キャビティ構造プリント配線板とその製造方法及び実装構造
JP4551321B2 (ja) * 2005-07-21 2010-09-29 新光電気工業株式会社 電子部品実装構造及びその製造方法
JP2007053235A (ja) * 2005-08-18 2007-03-01 Matsushita Electric Ind Co Ltd 基台及び半導体デバイス
JP2007123524A (ja) * 2005-10-27 2007-05-17 Shinko Electric Ind Co Ltd 電子部品内蔵基板
US7632708B2 (en) 2005-12-27 2009-12-15 Tessera, Inc. Microelectronic component with photo-imageable substrate
JP2007194436A (ja) * 2006-01-19 2007-08-02 Elpida Memory Inc 半導体パッケージ、導電性ポスト付き基板、積層型半導体装置、半導体パッケージの製造方法及び積層型半導体装置の製造方法
JP2009099750A (ja) * 2007-10-17 2009-05-07 Powertech Technology Inc 半導体パッケージ
JP5185062B2 (ja) * 2008-10-21 2013-04-17 パナソニック株式会社 積層型半導体装置及び電子機器
US8623753B1 (en) * 2009-05-28 2014-01-07 Amkor Technology, Inc. Stackable protruding via package and method
JP2011095705A (ja) * 2009-09-30 2011-05-12 Fujifilm Corp 感光性組成物、感光性ソルダーレジスト組成物及び感光性ソルダーレジストフィルム、並びに、永久パターン、その形成方法及びプリント基板
US8169065B2 (en) * 2009-12-22 2012-05-01 Epic Technologies, Inc. Stackable circuit structures and methods of fabrication thereof
US8531021B2 (en) 2011-01-27 2013-09-10 Unimicron Technology Corporation Package stack device and fabrication method thereof
US8476770B2 (en) 2011-07-07 2013-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and methods for forming through vias
US8637992B2 (en) 2011-11-30 2014-01-28 Invensas Corporation Flip chip package for DRAM with two underfill materials
US9362143B2 (en) 2012-05-14 2016-06-07 Micron Technology, Inc. Methods for forming semiconductor device packages with photoimageable dielectric adhesive material, and related semiconductor device packages
CN103632988B (zh) * 2012-08-28 2016-10-19 宏启胜精密电子(秦皇岛)有限公司 层叠封装结构及其制作方法
CN103681365B (zh) * 2012-08-31 2016-08-10 宏启胜精密电子(秦皇岛)有限公司 层叠封装结构及其制作方法
CN103681359A (zh) * 2012-09-19 2014-03-26 宏启胜精密电子(秦皇岛)有限公司 层叠封装结构及其制作方法
US9368438B2 (en) 2012-12-28 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package (PoP) bonding structures
US8946901B2 (en) 2013-01-22 2015-02-03 Invensas Corporation Microelectronic package and method of manufacture thereof
US9378982B2 (en) 2013-01-31 2016-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Die package with openings surrounding end-portions of through package vias (TPVs) and package on package (PoP) using the die package
US9167710B2 (en) 2013-08-07 2015-10-20 Invensas Corporation Embedded packaging with preformed vias

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104051389A (zh) * 2013-03-12 2014-09-17 台湾积体电路制造股份有限公司 具有焊盘连接件上通孔的叠层封装件

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