CN107249108B - 固态图像传感器和相机系统 - Google Patents

固态图像传感器和相机系统 Download PDF

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Publication number
CN107249108B
CN107249108B CN201710547671.3A CN201710547671A CN107249108B CN 107249108 B CN107249108 B CN 107249108B CN 201710547671 A CN201710547671 A CN 201710547671A CN 107249108 B CN107249108 B CN 107249108B
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amplifier
signal
image sensor
solid
state image
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CN107249108A (zh
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若林准人
植野洋介
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Analogue/Digital Conversion (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN201710547671.3A 2011-10-20 2012-10-11 固态图像传感器和相机系统 Active CN107249108B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011230676A JP5887827B2 (ja) 2011-10-20 2011-10-20 固体撮像素子およびカメラシステム
JP2011-230676 2011-10-20
CN201280050010.5A CN103875238B (zh) 2011-10-20 2012-10-11 固态图像传感器和相机系统

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CN201280050010.5A Division CN103875238B (zh) 2011-10-20 2012-10-11 固态图像传感器和相机系统

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CN107249108A CN107249108A (zh) 2017-10-13
CN107249108B true CN107249108B (zh) 2020-11-10

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CN201280050010.5A Active CN103875238B (zh) 2011-10-20 2012-10-11 固态图像传感器和相机系统

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US (2) US9451189B2 (enExample)
EP (1) EP2770732B1 (enExample)
JP (1) JP5887827B2 (enExample)
KR (1) KR101969189B1 (enExample)
CN (2) CN107249108B (enExample)
WO (1) WO2013058167A1 (enExample)

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CN107360738B (zh) * 2015-04-03 2020-10-27 索尼半导体解决方案公司 固态成像元件、成像设备和电子器械
KR102392791B1 (ko) * 2015-11-04 2022-05-02 삼성전자주식회사 이미지 센서, 이를 포함하는 전자 장치 및 이의 동작 방법
WO2021138838A1 (zh) * 2020-01-08 2021-07-15 华为技术有限公司 一种图像读取电路、图像传感器以及终端设备
JP7405653B2 (ja) * 2020-03-11 2023-12-26 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イメージセンサ
CN112714268B (zh) * 2020-08-21 2022-02-08 深圳市汇顶科技股份有限公司 图像传感器、指纹检测装置和电子设备
WO2022036713A1 (zh) 2020-08-21 2022-02-24 深圳市汇顶科技股份有限公司 图像传感器、指纹检测装置和电子设备
CN112798603A (zh) * 2021-01-06 2021-05-14 深圳技术大学 一种成像系统及其成像方法
CN114866708B (zh) 2021-02-04 2025-06-27 佳能株式会社 光电转换装置、a/d转换器和装备
JP2022119632A (ja) * 2021-02-04 2022-08-17 キヤノン株式会社 光電変換装置、光電変換システムおよび移動体
JP7649151B2 (ja) 2021-02-04 2025-03-19 キヤノン株式会社 光電変換装置、光電変換システム、移動体および半導体基板
JP7659398B2 (ja) * 2021-02-04 2025-04-09 キヤノン株式会社 光電変換装置、ａｄ変換器及び機器
JP7719616B2 (ja) * 2021-03-18 2025-08-06 キヤノン株式会社 光電変換装置、電子機器および基板
CN113489927B (zh) * 2021-06-01 2022-06-28 西安理工大学 一种cmos图像传感器的高速列线读出电路及读出方法
EP4283970A4 (en) 2021-06-16 2024-07-24 Samsung Electronics Co., Ltd. ELECTRONIC LOW LIGHT NOISE CANCELLATION DEVICE AND OPERATION METHOD THEREFOR
US12069391B2 (en) * 2021-07-29 2024-08-20 Omnivision Technologies, Inc. Readout architectures for dark current reduction in indirect time-of-flight sensors
JP7706356B2 (ja) * 2021-12-23 2025-07-11 株式会社デンソー Δς変調型ａ／ｄ変換装置
CN117223293A (zh) * 2022-02-10 2023-12-12 华为技术有限公司 一种高速、低功耗像素偏置电路
US12015427B2 (en) 2022-04-05 2024-06-18 Stmicroelectronics (Research & Development) Limited Photodiode current compatible input stage for a sigma-delta analog-to-digital converter

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JP4470700B2 (ja) 2004-02-23 2010-06-02 ソニー株式会社 Ａｄ変換方法およびａｄ変換装置並びに物理量分布検知の半導体装置および電子機器
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JP5151507B2 (ja) * 2008-01-29 2013-02-27 ソニー株式会社 固体撮像素子、固体撮像素子の信号読み出し方法および撮像装置
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Also Published As

Publication number Publication date
KR101969189B1 (ko) 2019-04-15
KR20140073509A (ko) 2014-06-16
EP2770732A4 (en) 2015-06-10
US20160360130A1 (en) 2016-12-08
JP2013090234A (ja) 2013-05-13
WO2013058167A1 (ja) 2013-04-25
CN103875238B (zh) 2017-08-04
US20140293103A1 (en) 2014-10-02
CN103875238A (zh) 2014-06-18
CN107249108A (zh) 2017-10-13
EP2770732A1 (en) 2014-08-27
EP2770732B1 (en) 2018-01-10
JP5887827B2 (ja) 2016-03-16
US9451189B2 (en) 2016-09-20
US9843747B2 (en) 2017-12-12

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