CN107216135B - NiCuZn铁氧体磁片及制备方法 - Google Patents

NiCuZn铁氧体磁片及制备方法 Download PDF

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CN107216135B
CN107216135B CN201710346297.0A CN201710346297A CN107216135B CN 107216135 B CN107216135 B CN 107216135B CN 201710346297 A CN201710346297 A CN 201710346297A CN 107216135 B CN107216135 B CN 107216135B
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Abstract

NiCuZn铁氧体磁片及制备方法,属于电子材料技术领域,本发明的NiCuZn铁氧体磁片,组分包括主料和添加剂,按氧化物计算,主料包括:Fe2O3:48.0~49.5mol%,ZnO:21~24mol%,NiO:20.5~16.5mol%,CuO:10.0~11.0mol%;添加剂包括:Co2O3:0.20~0.50wt%,TiO2:0.10~0.40wt%,SnO2:0.10~0.40wt%;添加剂的比例以主料经800~900℃预烧2~3h后的产物的质量为基准。本发明的铁氧体磁片,在13.56MHz频率下复数磁导率实部μ′为150~160、复数磁导率虚部μ″为1.4~1.6、Q>100、厚度100~300μm,并具有良好的柔韧性。

Description

NiCuZn铁氧体磁片及制备方法
技术领域
本发明属于电子材料技术领域,特别涉及一种应用于NFC系统高磁导率实部(μ′)、高品质因数(Q)的NiCuZn铁氧体磁片及其制备方法。
背景技术
NFC(near field communication)近场通信技术是最近几年兴起的、从射频识别(RFID)技术演化而来的一种新技术,是互联网技术与RFID(射频识别技术)结合的产物。它具有数据量大、保密性高、抗干扰能力强、识别时间短、费用较低等优点,具有良好的应用前景。特别是NFC技术与手机相结合应用的趋势,使其成为未来一项令人瞩目的新技术。它可以满足任何两个无线设备问的信息交换、内容访问、服务交换,并且使之更为简约。这将任意两个无线设备间的通信距离大大缩短。可以在短距离(小于20厘米)的范围中进行通信,这样不仅大大的简化了识别过程,而且能使电子设备更清楚、更安全、更直接的相互通信。目前,NFC技术在手机支付、公交、门禁等领域发挥着巨大作用,而且该技术的兴起为高性能铁氧体材料的应用开辟了新的途径。
由于手机类消费电子产品对外观要求比较高,因此NFC手机天线一般需要内置。手机内部的金属环境会产生一个由电涡流产生的感应磁场,根据楞次定理,这个磁场的方向与原磁场的方向相反,因此信号强度会减弱,作用距离缩短。采用高磁导率、低磁损耗铁氧体材料制作的磁片可以有效的解决此问题。其作用是隔离金属材料对天线磁场的吸收,增加天线的磁场强度,从而有效增加通信感应距离。对于NFC用NiCuZn铁氧体磁片,首先要求其在13.56MHz时磁导率尽量高,高磁导率磁片可以提高NFC天线近场耦合作用距离;其次磁片的磁导率虚部μ″应该尽量低,品质因数Q值(13.56MHz)尽量高,这样可以很大程度上减少手机内部金属环境对NFC天线信号造成的影响,也有利于提高天线的作用距离。因此,开发一种在13.56MHz在具有高μ′的同时也能保证高Q值的NiCuZn铁氧体磁片有非常广阔的应用前景,并对推动NFC应用推广有非常重要的现实意义。
由于复数磁导率μ′、μ″均与起始磁导率μi相关,因此提高μ′、降低μ″难以兼得,起始磁导率μi和Q值是相互制约的两个技术参数,二者需要综合调节,在保证磁导率μ′的基础上尽量降低μ″。因此目前高μ′、高Q值的NiCuZn铁氧体磁片已成为磁材业界的一个热点。TDK公司的IBF15磁片,13.56MHz磁导率实部μ′为150、Q值30(厚度100、180μm);IFL04磁片,13.56MHz磁导率实部μ′为45、Q值为34.6(厚度50、100μm)。MARUWA公司的FSF系列铁氧体磁片,13.56MHz磁导率实部μ′130~150(厚度100、140、260μm)。专利CN201610014662.3公布了一种NiCuZn铁氧体磁片制备方法,通过先后加入各种溶剂,按各自不同的球磨时间进行混合后压制,增加成型片材的密度提高磁性能,具体参数为μ′=178.6、Q=50,μ′=165.3、Q=53,μ′=145.1、Q=76,厚度30~120μm。专利CN201410424887.7公布了一种使用水基流延浆料制备的NFC磁性基板及其制备方法,μ′范围在120~350、Q值4.4~40,厚度80~250μm。
发明内容
本发明的目标是提供一种工作频率在13.56MHz、同时具有较高的磁导率实部(μ′>150)和高品质因数Q(>100)的NiCuZn铁氧体屏蔽磁片及其制备方法。
本发明解决所述技术问题采用的技术方案是,NiCuZn铁氧体磁片的制备方法,其特征在于,包括以下步骤:
1)选择主料配方:按氧化物计算,主料包括:
Fe2O3:48.0~49.5mol%,ZnO:21~24mol%,NiO:20.5~16.5mol%,CuO:10.0~11.0mol%;
2)一次球磨:球磨主料,混合均匀;
3)预烧:粉料烘干后,800~900℃预烧2~3h;
4)掺杂:将粉料使用以下添加剂进行掺杂:Co2O3:0.20~0.50wt%,TiO2:0.10~0.40wt%,SnO2:0.10~0.40wt%;
5)球磨浆料:按照掺杂有添加剂的粉料300~380重量单位、有机粘结剂150~200重量单位、酒精100~200重量单位的比例,球磨混合均匀;
6)流延成型:将混合均匀的浆料通过流延工艺制备100~200μm厚度的生膜带,温度50~60℃下烘干;
7)叠片热压:将流延获得的生膜带叠片2~4层分段进行热压成型,压力8~14MPa,温度70~90℃,热压时间20~30min,压制完成的膜带150~600μm;
8)烧结:生片经压制后裁剪成所需要的规格,再将裁剪后的生片在炉内进行烧制,冷却后获得磁片;
9)柔性处理:
烧结完成磁片厚度120~480μm,塑封、裂片;
进一步的,所述步骤8)中,烧结工艺为:升温速率0.5~1.5℃/min,保温温度1000~1100℃、时间2~4h,空气烧结,降温速率0.75~1.5℃/min。
本发明还提供一种NiCuZn铁氧体磁片,其特征在于,其组分包括主料和添加剂,按氧化物计算,主料包括:Fe2O3:48.0~49.5mol%,ZnO:21~24mol%,NiO:20.5~16.5mol%,CuO:10.0~11.0mol%;
添加剂包括:Co2O3:0.20~0.50wt%,TiO2:0.10~0.40wt%,SnO2:0.10~0.40wt%。添加剂的比例以主料经800~900℃预烧2~3h后的产物的质量为基准。
对本发明的磁片使用安捷伦4291B阻抗分析仪测试磁片样品的磁谱,测试范围1~200MHz。本发明所制得的铁氧体磁片,在13.56MHz频率下复数磁导率实部μ′为150~160、复数磁导率虚部μ″为1.4~1.6、Q>100、厚度100~300μm,并具有良好的柔韧性。
具体实施方式
本发明的主要思路是:采用NiCuZn铁氧体缺铁配方,增加空位促进离子扩散提高致密度,减少Fe2+的产生进而减少磁滞损耗,提高Q值;提高烧结温度增大晶粒尺寸及致密度,增加畴壁位移提高材料磁导率;适当增加ZnO含量促进固相反应,同时提高饱和磁化强度Ms、降低磁晶各向异性常数K1和致伸缩系数λs,从而提高起始磁导率μi;Co2+、Ti4+、Sn4+等离子通过增加畴壁移动阻力、提高畴壁共振频率及调节K1和λs,减少μ″,增加Q值;分段热压提高流延生膜带的致密度提高磁片的磁导率;在适宜的升温速率下烧制出磁片,固相反应完全,同时平整度较高。
针对目前NFC手机支付系统对高磁导率实部μ′、高品质因数Q的铁氧体磁片的需求,本发明提供了应用频率13.56MHz、高磁导率实部μ′、低磁导率虚部μ″、高Q值NiCuZn铁氧体磁片及制备方法。本发明的指导思想是:采用缺铁配方有利于铁氧体的高频应用,缺铁配方产生的阳离子空位促进离子扩散提升烧结样品的致密度,并减少Fe2+的产生降低了电阻率。利用非磁性的Zn2+减小超交换作用和产生磁晶各向异性离子的数目,提高μi;采用Co2O3、TiO2、SnO2等添加剂控制NiCuZn铁氧体磁片的磁化机制,进而控制NiCuZn铁氧体磁片损耗,制定最优的掺杂配方;生膜带干坯片的厚度按如下公式:
Figure BDA0001296562820000041
α为干燥时厚度收缩率,h和L分别为刮刀间隙的高度与长度;η为浆料粘度;ΔP为内斗压力;vo为相对速度。浆料制作中铁氧体粉末与有机粘结剂(包含粘结剂、分散剂、增塑剂)、酒精的比例直接影响到浆料粘度和磁片收缩率,结合流延成型、致密化烧结,制备了在13.56MHz时具有高磁导率实部μ′、低磁导率虚部μ″、高Q值的NiCuZn铁氧体磁片。
本发明的NiCuZn铁氧体磁片主要氧化物成分按照摩尔百分比计算,掺杂剂成分按质量百分比,以氧化物计算。
例如,主料包括Fe2O3:48.0~49.5mol%,ZnO:21~24mol%,NiO:20.5~16.5mol%,CuO:10.0~11.0mol%;
添加剂包括:
Co2O3:0.20~0.50wt%,TiO2:0.10~0.40wt%,SnO2:0.10~0.40wt%。
其中Fe2O3在主料中的摩尔百分比为48.0~49.5mol%,
添加剂以预烧后的主料的质量为基准,例如,若预烧处理后的主料为100g,则Co2O3的质量为0.20~0.50g,TiO2为0.10~0.40g,SnO2为0.10~0.40g。
本发明的高磁导率实部μ′、低磁导率虚部μ″、高Q值的NiCuZn铁氧体磁片及其制备方法,包括以下步骤:
1.主配方:
Fe2O3:48.0~49.5mol%,ZnO:21~24mol%,NiO:20.5~16.5mol%,CuO:10.0~11.0mol%;
2.一次球磨:
将粉料使用钢球球磨混合均匀,时间1~2h;
3.预烧:
将一磨粉料烘干后,800~900℃预烧2~3h;
4.掺杂:
将步骤3中粉料使用以下添加剂进行掺杂:Co2O3:0.20~0.50wt%,TiO2:0.10~0.40wt%,SnO2:0.10~0.40wt%;
5.球磨浆料:
将4中掺杂完添加剂的粉料300~380g、有机粘结剂(包含粘结剂、分散剂、增塑剂)150~200g、酒精100~200g,球磨2~4h混合均匀;
6.流延成型:
将混合均匀的浆料通过流延工艺制备100~200μm厚度的生膜带,烘干温度50~60℃;
7.叠片热压:
将流延获得的生膜带叠片2~4层分段进行热压成型,压力8~14MPa、温度70~90℃、时间20~30min,压制完成的膜带150~600μm;
8.烧结:
生片经压制后裁剪成所需要的规格,再将裁剪后的生片在炉内进行烧制,冷却后获得磁片。所用烧结工艺:升温速率0.5~1.5℃/min,保温温度1000~1100℃、时间2~4h,空气烧结,降温速率0.75~1.5℃/min;
9.柔性处理:
烧结完成磁片厚度120~480μm,塑封、裂片;
10.测试:
使用安捷伦4291B阻抗分析仪测试磁片样品的磁谱,测试范围1~200MHz。
实施例1~3:
一种高磁导率实部μ′、低磁导率虚部μ″、高Q值的NiCuZn铁氧体磁片及其制备方法,包括以下步骤:
1.配方
实施例1~3主配方见下表:
Figure BDA0001296562820000051
2.一次球磨
将粉料在球磨机中混合均匀,时间2h;
3.预烧
将步骤2所得球磨料烘干,并在850℃炉内预烧2h;
4.掺杂
将步骤3所得料粉按质量比加入以下添加剂:
Figure BDA0001296562820000061
5.二次球磨
取步骤4所得粉料1~3各300g加入150g有机粘合剂、130g酒精球磨3h混合均匀;
6.流延成型
将混合均匀的浆料通过流延工艺制备200μm厚度的生膜带,刮刀高度600μm烘干温度50~60℃;
7.叠片热压
将生膜带叠压2片,分三步进行热压:第一阶段8MPa/8min,70℃、第二阶段14MPa/10min,70℃、第三阶段8MPa/7min,70℃,压制完成膜片300μm。
8.烧结
将压制完成的膜片1~3裁剪后置于烧结炉内烧结,升温速率1.0℃/min,保温温度1050℃、时间3h,空气烧结,降温速率0.75℃/min;
经过以上工艺制备的NiCuZn铁氧体磁片,厚度250μm(±10μm),在13.56MHz频率时具有高磁导率实部μ′、低磁导率虚部μ″以及高Q值。具体性能指标如下:
Figure BDA0001296562820000062

Claims (2)

1.NiCuZn铁氧体磁片的制备方法,其特征在于,包括以下步骤:
1)选择主料配方:按氧化物计算,主料包括:
Fe2O3:48.0~49.5mol%,ZnO:21~24mol%,NiO:20.5~16.5mol%,CuO:10.0~11.0mol%;
2)一次球磨:球磨主料,混合均匀;
3)预烧:粉料烘干后,800~900℃预烧2~3h;
4)掺杂:将粉料使用以下添加剂进行掺杂:Co2O3:0.20~0.50wt%,TiO2:0.10~0.40wt%,SnO2:0.10~0.40wt%;
5)球磨浆料:按照掺杂有添加剂的粉料300~380重量单位、有机粘结剂150~200重量单位、酒精100~200重量单位的比例,球磨混合均匀;
6)流延成型:将混合均匀的浆料通过流延工艺制备100~200μm厚度的生膜带,温度50~60℃下烘干;
7)叠片热压:将流延获得的生膜带叠片2~4层分段进行热压成型,压力8~14MPa,温度70~90℃,热压时间20~30min,压制完成的膜带150~600μm;
8)烧结:生片经压制后裁剪成所需要的规格,再将裁剪后的生片在炉内进行空气烧结,升温速率0.5~1.5℃/min、保温温度1000~1100℃、时间2~4h,降温速率0.75~1.5℃/min;冷却后获得磁片。
2.NiCuZn铁氧体磁片,其特征在于,采用下述步骤制备得到:
1)选择主料配方:按氧化物计算,主料包括:
Fe2O3:48.0~49.5mol%,ZnO:21~24mol%,NiO:20.5~16.5mol%,CuO:10.0~11.0mol%;
2)一次球磨:球磨主料,混合均匀;
3)预烧:粉料烘干后,800~900℃预烧2~3h;
4)掺杂:将粉料使用以下添加剂进行掺杂:Co2O3:0.20~0.50wt%,TiO2:0.10~0.40wt%,SnO2:0.10~0.40wt%;
5)球磨浆料:按照掺杂有添加剂的粉料300~380重量单位、有机粘结剂150~200重量单位、酒精100~200重量单位的比例,球磨混合均匀;
6)流延成型:将混合均匀的浆料通过流延工艺制备100~200μm厚度的生膜带,温度50~60℃下烘干;
7)叠片热压:将流延获得的生膜带叠片2~4层分段进行热压成型,压力8~14MPa,温度70~90℃,热压时间20~30min,压制完成的膜带150~600μm;
8)烧结:生片经压制后裁剪成所需要的规格,再将裁剪后的生片在炉内进行空气烧结,升温速率0.5~1.5℃/min、保温温度1000~1100℃、时间2~4h,降温速率0.75~1.5℃/min;冷却后获得磁片。
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