CN107170811A - 一种金属氧化物薄膜晶体管结构背板及其制备方法 - Google Patents

一种金属氧化物薄膜晶体管结构背板及其制备方法 Download PDF

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CN107170811A
CN107170811A CN201710335245.3A CN201710335245A CN107170811A CN 107170811 A CN107170811 A CN 107170811A CN 201710335245 A CN201710335245 A CN 201710335245A CN 107170811 A CN107170811 A CN 107170811A
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CN107170811B (zh
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张建业
宋泳锡
李伟
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BOE Technology Group Co Ltd
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Abstract

本发明涉及显示技术领域，公开一种金属氧化物薄膜晶体管结构背板的制备方法，在衬底上形成由负性遮光有机硅材料制备顶栅型薄膜晶体管的栅极绝缘层，在上述金属氧化物薄膜晶体管结构背板的制备方法中，采用负性遮光有机硅材料一次制备栅极绝缘层，省去了SiOx等薄膜的沉积和干刻步骤，简化制备工艺，提高工艺制程的效率，所获得的顶栅型薄膜晶体管具有较小的寄生电容，提升了器件性能，进而提高了产品良率。

Description

一种金属氧化物薄膜晶体管结构背板及其制备方法
技术领域
本发明涉及显示技术领域，尤其涉及一种金属氧化物薄膜晶体管结构背板及其制备方法。
背景技术
在半导体技术领域，金属氧化物TFT(薄膜晶体管)以其高迁移率、工艺简单、成本低、大面积均匀性高等优点逐渐代替传统的非晶硅(a-Si)TFT和低温多晶硅(LTPS)TFT，而成为驱动OLED显示面板的关键器件。
目前，金属氧化物TFT在被称为OLED显示面板的下一代技术革新的AMOLED显示器(有源矩阵有机发光二极管)技术方面也是特点显著。而且WOLED+CF(White OLED+CF，在白色OLED发光材料上组合使用RGBW四色彩色滤光片实现彩色显示)技术作为AMOLED的一种开发方向，因其具有有机EL材料(Organic Electro-Luminescence，有机电子发光材料)利用率高、对蒸镀的mask(掩膜版)要求低、采用顶栅型的金属氧化物TFT开口率高等优点而备受关注。然而，作为关键技术的沟道层半导体的选择不仅要关注迁移率等指标，还要考虑相关工艺的复杂度等相关问题。但是，现有金属氧化物TFT存在开关TFT的寄生电容较大，存在制备工艺复杂、产品良率低的缺陷。
发明内容
本发明提供一种金属氧化物薄膜晶体管结构背板及其制备方法，该金属氧化物薄膜晶体管结构背板及其制备方法能够减小寄生电容，简化制备工艺，提高工艺制程的效率和产品良率。
为达到上述目的，本发明提供以下技术方案：
一种金属氧化物薄膜晶体管结构背板的制备方法，在衬底上制备顶栅型薄膜晶体管，所述顶栅型薄膜晶体管的栅极绝缘层由负性遮光有机硅材料制备。
在上述金属氧化物薄膜晶体管结构背板的制备方法中，采用负性遮光有机硅材料一次制备栅极绝缘层，省去了SiOx等薄膜的沉积和干刻步骤，简化制备工艺，提高工艺制程的效率，所获得的顶栅型薄膜晶体管具有较小的寄生电容，提升了器件性能，进而提高了产品良率。
优选地，包括如下步骤:
在衬底上沉积第一金属层，并图案化第一金属层形成源漏极；
在形成源漏极后的第一金属层上沉积金属氧化物制备有源层；
沉积第一绝缘层形成栅极绝缘层，并采用自对准曝光方法图形化栅极绝缘层，形成倒梯形图案；
之后，涂覆一层普通正性光刻胶，图形化后沉积第二金属层作为栅极金属层，剥离掉不需要的金属部分，形成栅极电极；
沉积第二绝缘层，采用掩膜图形化第二绝缘层，形成接触孔；
沉积第三金属层，并图案化第三金属层形成公共电极。
进一步地，所述沉积为物理气相沉积、化学气相沉积、原子层沉积或者激光沉积。
更进一步地，所述在衬底上沉积第一金属层包括在衬底上采用喷溅的方式沉积一层金属薄膜。
更进一步地，所述金属薄膜由Cu、Al、MoNb或Cu合金、MoNb合金制成。
进一步地，所述金属氧化物为IGZO、ZnON或者ITZO。
进一步地，所述有源层的厚度为500nm-1000nm。
进一步地，所述沉积第一绝缘层作为栅极绝缘层包括：
旋涂负性遮光有机硅材料形成涂层；
在涂层上进行曝光处理，光刻显影后形成倒梯形图案；
涂布一层正性的光阻，曝光显影图形化形成易于剥离的断差。
更进一步地，在形成倒梯形图案后沉积栅极金属，剥离掉不需要的部分后，形成栅极图案后，再对有源层进行湿法刻蚀。
进一步地，所述栅极金属层为单层金属薄膜或多层金属薄膜，所述金属薄膜由Cu,A1,Mo,Ti,Ag,Au,Ta,Cr或铝合金制成。
另外，本发明还提供一种金属氧化物薄膜晶体管结构背板，包括衬底基板以及依次形成在所述衬底基板上的源漏极金属层、有源层、栅极绝缘层、栅极金属层以及公共电极，其中，所述栅极绝缘层由负性遮光有机硅材料制备。
优选地，所述负性遮光有机硅材料内包含添加荧烷黑染料或结晶紫腈化物染料。
附图说明
图1为本发明提供的一种金属氧化物薄膜晶体管结构背板的制备方法的工艺流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
一种金属氧化物薄膜晶体管结构背板的制备方法，在衬底上制备顶栅型薄膜晶体管，顶栅型薄膜晶体管的栅极绝缘层由负性遮光有机硅材料制备。
在上述金属氧化物薄膜晶体管结构背板的制备方法中，采用负性遮光有机硅材料一次制备栅极绝缘层，省去了SiOx等薄膜的沉积和干刻步骤，简化制备工艺，提高工艺制程的效率，所获得的顶栅型薄膜晶体管具有较小的寄生电容，提升了器件性能，进而提高了产品良率。
一种优选的实施方式，上述金属氧化物薄膜晶体管结构背板的制备方法，如图1所示，包括如下步骤:
步骤S101，在衬底上沉积第一金属层，并图案化第一金属层形成源漏极；
步骤S102，在形成源漏极后的第一金属层上沉积金属氧化物制备有源层；
步骤S103，沉积第一绝缘层形成栅极绝缘层，并采用自对准曝光方法图形化栅极绝缘层，形成倒梯形图案；
步骤S104，之后，涂覆一层普通正性光刻胶，图形化后沉积第二金属层作为栅极金属层，剥离掉不需要的金属部分，形成栅极电极；
步骤S105，沉积第二绝缘层，采用掩膜图形化第二绝缘层，形成接触孔；在另一实施例中，此步骤为：沉积第二绝缘层，采用同一掩膜图形化第二绝缘层，形成接触孔；
步骤S106，沉积第三金属层，并图案化第三金属层形成公共电极。
在上述金属氧化物薄膜晶体管结构背板的制备方法中，首先对衬底采用标准方法进行清洗，通过步骤S101制备源漏极，可以采用喷溅的方式在衬底上沉积一层第一金属层，然后通过图案化工艺将第一金属层形成源漏极，其中图案化工艺可以为光刻、烘烤、刻蚀、剥离等；通过步骤S102在形成源漏极后的第一金属层上沉积金属氧化物制备有源层；然后通过步骤S103沉积第一绝缘层作为栅极绝缘层其中栅极绝缘层采用负性遮光有机硅材料一次制备，省去了SiOx等薄膜的沉积和干刻步骤，简化制备工艺，提高工艺制程的效率，接着采用自对准曝光方法图形化栅极绝缘层，形成倒梯形图案；通过步骤S104，涂覆一层正性的光刻胶，图形化后。沉积第二金属层。剥离不需要的栅极金属形成栅极电极，第二金属层形成栅极电极，能够减少寄生电容，省去了一层光罩的制作，并且可以有效的减少发光区漏光对有源区影响。可以有效提升了产品良率和器件性能，缩减工序；通过步骤S105，继续沉积第二绝缘层，采用掩膜(或与上述步骤同一掩膜)图形化第二绝缘层，形成接触孔，图形化工艺可以采用曝光显影，一次完成绝缘层开孔，形成接触孔；最后通过步骤S106，沉积第三金属层，并图案化第三金属层形成公共电极。
采用上述步骤获得的顶栅型薄膜晶体管具有较小的寄生电容，提升了器件性能，进而提高了产品良率。
具体地，沉积为物理气相沉积、化学气相沉积、原子层沉积或者激光沉积，具体采用何种沉积方式根据金属氧化物薄膜晶体管结构背板的制备方法的实际情况(如工艺要求和实施设备的限制等)进行选择。
更具体地，在衬底上沉积第一金属层包括在衬底上采用喷溅的方式沉积一层金属薄膜。
更具体地，金属薄膜可以由Cu(铜)、Al(铝)、MoNb(钼铌)或Cu(铜)合金、MoNb(钼铌)合金制成，金属薄膜还可以由其他能够满足需求的金属材料制备。
具体地，金属氧化物可以为IGZO(铟镓锌氧化物)、ZnON(锌氮氧化物)或者ITZO(铟锡锌氧化物)，金属氧化物还可以由其他能够满足需求的金属材料制备。
具体地，有源层的厚度可以为500nm-1000nm，有源层的厚度可以优选为500nm、600nm、700nm、800nm、900nm以及1000nm，有源层的具体厚度可以根据金属氧化物薄膜晶体管结构背板的制备方法的实际情况进行选择。
具体地，沉积第二绝缘层作为栅极绝缘层包括：
旋涂负性遮光有机硅材料形成涂层；
在涂层上进行曝光处理，光刻显影后形成倒梯形图案；
涂布一层正性的光阻，曝光显影图形化形成易于剥离的断差。
在上述金属氧化物薄膜晶体管结构背板的制备方法中，通过在第一绝缘层上用负性遮光有机硅材料旋涂一层2un厚的涂层，然后在涂层上进行背沟道设计以及背曝光处理形成倒梯形图案，接着涂布一层正性的光阻，通过曝光显影等图形化工艺形成倒易于剥离的断差，保留除栅极绝缘层上的其余部分有光阻，利于后续剥离。有效地提高制作速率，仅需要通过一次薄膜沉积和一道干法刻蚀工序就可以形成栅极图案和有源层图案。
更具体地，在形成倒梯形图案后沉积栅极金属，剥离掉不需要的部分后，形成栅极图案后，再对有源层进行湿法刻蚀。
在上述金属氧化物薄膜晶体管结构背板的制备方法中，可以通过四道掩膜板就可以制作出源漏极，有源层、栅极绝缘层以及栅极金属层，接触通孔，及公共电极。节省了掩膜板，有利于提高制程的效率和产品的良率，减少寄生电容。
具体地，栅极金属层为单层金属薄膜或多层金属薄膜，金属薄膜由Cu,A1,Mo,Ti,Ag,Au,Ta,Cr或铝合金制成。
另外，本发明还提供一种金属氧化物薄膜晶体管结构背板，包括衬底基板以及依次形成在衬底基板上的源漏极金属层、有源层、栅极绝缘层、栅极金属层以及公共电极，其中，栅极绝缘层由负性遮光有机硅材料制备。
由于有机硅光固化材料是一种负性光阻，有机硅光刻胶材料加入遮光材料形成由负性遮光有机硅材料，由负性遮光有机硅材料制备栅极绝缘层所获得的顶栅型薄膜晶体管具有较小的寄生电容，提升了器件性能，进而提高了产品良率。
一种优选的实施方式，负性遮光有机硅材料内包含添加荧烷黑染料或结晶紫腈化物染料，通过在负性遮光有机硅材料内添加荧烷黑染料或结晶紫腈化物染料可以增强由负性遮光有机硅材料制备栅极绝缘层的遮光效果。
显然，本领域的技术人员可以对本发明实施例进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (12)

1.一种金属氧化物薄膜晶体管结构背板的制备方法，其特征在于，在衬底上制备顶栅型薄膜晶体管，所述顶栅型薄膜晶体管的栅极绝缘层由负性遮光有机硅材料制备。
2.根据权利要求1所述的金属氧化物薄膜晶体管结构背板的制备方法，其特征在于，包括如下步骤:
在衬底上沉积第一金属层，并图案化第一金属层形成源漏极；
在形成源漏极后的第一金属层上沉积金属氧化物制备有源层；
沉积第一绝缘层形成栅极绝缘层，并采用自对准曝光方法图形化栅极绝缘层，形成倒梯形图案；之后，涂覆一层普通正性光刻胶，图形化后沉积第二金属层作为栅极金属层，剥离掉不需要的金属部分，形成栅极电极；
沉积第二绝缘层，采用掩膜图形化第二绝缘层，形成接触孔；
沉积第三金属层，并图案化第三金属层形成公共电极。
3.根据权利要求2所述的金属氧化物薄膜晶体管结构背板的制备方法，其特征在于，所述沉积为物理气相沉积、化学气相沉积、原子层沉积或者激光沉积。
4.根据权利要求3所述的金属氧化物薄膜晶体管结构背板的制备方法，其特征在于，所述在衬底上沉积第一金属层包括在衬底上采用喷溅的方式沉积一层金属薄膜。
5.根据权利要求4所述的金属氧化物薄膜晶体管结构背板的制备方法，其特征在于，所述金属薄膜由Cu、Al、MoNb或Cu合金、MoNb合金制成。
6.根据权利要求2所述的金属氧化物薄膜晶体管结构背板的制备方法，其特征在于，所述金属氧化物为IGZO、ZnON或者ITZO。
7.根据权利要求2所述的金属氧化物薄膜晶体管结构背板的制备方法，其特征在于，所述有源层的厚度为500nm-1000nm。
8.根据权利要求2所述的金属氧化物薄膜晶体管结构背板的制备方法，其特征在于，所述沉积第一绝缘层作为栅极绝缘层包括：
旋涂负性遮光有机硅材料形成涂层；
在涂层上进行曝光处理，光刻显影后形成倒梯形图案；
涂布一层正性的光阻，曝光显影图形化形成易于剥离的断差。
9.根据权利要求8所述的金属氧化物薄膜晶体管结构背板的制备方法，其特征在于，在形成倒梯形图案沉积栅极金属，剥离掉不需要的部分后，形成栅极图案后，再对有源层进行湿法刻蚀。
10.根据权利要求2所述的金属氧化物薄膜晶体管结构背板的制备方法，其特征在于，所述栅极金属层为单层金属薄膜或多层金属薄膜，所述金属薄膜由Cu,A1,Mo,Ti,Ag,Au,Ta,Cr或铝合金制成。
11.一种金属氧化物薄膜晶体管结构背板，其特征在于，包括衬底基板以及依次形成在所述衬底基板上的源漏极金属层、有源层、栅极绝缘层、栅极金属层以及公共电极，其中，所述栅极绝缘层由负性遮光有机硅材料制备。
12.根据权利要求11所示的金属氧化物薄膜晶体管结构背板，其特征在于，所述负性遮光有机硅材料内包含添加荧烷黑染料或结晶紫腈化物染料。
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