CN107164801B - 纳米材料制备装置及纳米材料制备方法 - Google Patents
纳米材料制备装置及纳米材料制备方法 Download PDFInfo
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- CN107164801B CN107164801B CN201710323662.6A CN201710323662A CN107164801B CN 107164801 B CN107164801 B CN 107164801B CN 201710323662 A CN201710323662 A CN 201710323662A CN 107164801 B CN107164801 B CN 107164801B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/10—Single-crystal growth directly from the solid state by solid state reactions or multi-phase diffusion
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7704—Halogenides
- C09K11/7705—Halogenides with alkali or alkaline earth metals
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
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- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710323662.6A CN107164801B (zh) | 2017-05-10 | 2017-05-10 | 纳米材料制备装置及纳米材料制备方法 |
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CN201710323662.6A CN107164801B (zh) | 2017-05-10 | 2017-05-10 | 纳米材料制备装置及纳米材料制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN107164801A CN107164801A (zh) | 2017-09-15 |
CN107164801B true CN107164801B (zh) | 2019-05-24 |
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CN201710323662.6A Active CN107164801B (zh) | 2017-05-10 | 2017-05-10 | 纳米材料制备装置及纳米材料制备方法 |
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CN (1) | CN107164801B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110253027A (zh) * | 2019-06-24 | 2019-09-20 | 北京莱泽光电技术有限公司 | 纳米粉末合金制备方法以及装置 |
CN114346235B (zh) * | 2022-01-17 | 2024-01-26 | 华东师范大学重庆研究院 | 一种自组装球形-六边形金纳米颗粒组合体及其制备方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101962724B (zh) * | 2010-10-26 | 2011-12-21 | 中国科学院青海盐湖研究所 | 一种Mg-RE-Ni合金储氢材料的制备方法 |
WO2015118533A1 (en) * | 2014-02-04 | 2015-08-13 | Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd | Methods for fabricating 3-dimentional scintillators |
CN105602566B (zh) * | 2016-02-29 | 2017-12-29 | 武汉理工大学 | 一种稀土掺杂NaGdF4上转换纳米晶及其制备方法 |
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Effective date of registration: 20180502 Address after: 200237 District 2319, room 69, Lane 1985, Chunshen Road, Minhang District, Shanghai 1 district. Applicant after: Shanghai Langyan Optoelectronics Technology Co.,Ltd. Applicant after: East China Normal University Address before: 200237 District 2319, room 69, Lane 1985, Chunshen Road, Minhang District, Shanghai 1 district. Applicant before: Shanghai Langyan Optoelectronics Technology Co.,Ltd. |
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Effective date of registration: 20211018 Address after: Room 4001, building 21, No. 123, Lane 1165, Jindu Road, Minhang District, Shanghai 201100 Patentee after: SHANGHAI LANGYAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Patentee after: Chongqing Research Institute of East China Normal University Address before: 200237 District 2319, room 69, Lane 1985, Chunshen Road, Minhang District, Shanghai 1 district. Patentee before: SHANGHAI LANGYAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: EAST CHINA NORMAL University |
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Effective date of registration: 20230519 Address after: 401120 No. 2, Floor 2, Building 1, No. 2, Huizhu Road, Yubei District, Chongqing Patentee after: Chongqing Huapu Environmental Protection Technology Co.,Ltd. Address before: Room 4001, building 21, No. 123, Lane 1165, Jindu Road, Minhang District, Shanghai 201100 Patentee before: SHANGHAI LANGYAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: Chongqing Research Institute of East China Normal University |
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