CN107123709A - 一种能同时产生光电效应与电致发光的器件及其制备方法 - Google Patents
一种能同时产生光电效应与电致发光的器件及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种能同时产生光电效应与电致发光的器件及其制备方法,该材料由一种异质结纳米棒经封装而来,具体包含各向异性导电膜、Al电极、ZnO、异质结纳米棒、7,7',8,8'‑四氟‑2,3,5,6‑四氰二甲基对苯醌、TCNQF4等部分。本发明还公开了这种器件的制备方法。
Description
技术领域
本发明涉及半导体领域,具体涉及一种能同时产生光电效应与电致发光的器件及其制备方法。
背景技术
当前,寻找新型大功率光源已成为研究热点,最常见的如LED发光器件。人们不断提出新的结构来达到设定的目标。如中国发明专利CN105742430A提供了一种LED外延结构,包括衬底,依次层叠形成在所述衬底上的GaN成核层、非掺杂GaN层、N型GaN层、异质结层以及P型GaN层;还包括设置在所述N型GaN层与所述异质结层之间的SiNx层,所述SiNx层形成有若干贯通的纳米孔洞。由于SiNx层具有纳米多孔结构,能有效降低异质结层形成的有源区的位错密度,从而减少有源区的非辐射复合中心,提高所述LED外延结构的内量子效率。另外,原位生长的具有纳米多孔结构的SiNx层还能减小光的全反射损失,提高所述LED外延结构的出光效率。该方法方法简单易实施,不但工艺成本低,而且能够有效保证产品良率。
中国发明专利CN101950785A提供了一种GaN基LED管芯P型GaN层的结构,该GaN基LED管芯P型GaN层的结构,是在P型GaN层上设有孔洞,孔洞的底部距离LED管芯的量子阱有源区的距离为10纳米-100纳米,孔洞内填有金属颗粒,孔洞的洞口处填充有封堵金属颗粒的透明介质膜。本发明是在P型GaN层上带有纳米孔洞,使孔洞里面具有一个个的金属颗粒,在纳米尺度范围植入了金属颗粒-有源层介质异质结构,形成了纳米金属颗粒与量子阱有源层耦合的介质异质结构,SPP与激子的耦合提高了GaN基LED的发光效率。
电致发光是光电领域另一个重要的问题,也是当前所有显示器及显示技术的基础。近几十年以来,显示技术也在不断进行更新换代,人们不断寻找更低耗、有效的发光技术。如中国发明专利102394263公开了一种增强n-ZnO/AlN/p-GaN发光二极管的电致发光性能的方法,该方法是在n-ZnO/AlN/p-GaN发光二极管的n-ZnO薄膜中插入一层Ag纳米颗粒,利用Ag局域态表面等离激元与ZnO近带边发光强的相互耦合作用,来提高n-ZnO/AlN/p-GaN异质结发光二极管电致发光性能。实验发现Ag纳米颗粒的局域态表面等离激元共振峰与ZnO近带边发光峰的位置相近,满足共振耦合条件,且粗糙的Ag纳米颗粒的表面有利于等离激元有效耦合成光且能够明显提高光的抽取效率。利用本发明,显著提高了n-ZnO/AlN/p-GaN异质结发光二极管电致发光性能。
然而,当前,随着半导体的发展,能够产生光电效应的器件已经非常多,能够产生电致发光的器件也非常多,但是,当前产生光电效应与电致发光的器件是分立的,尚未出现能够同时产生光电效应与电致发光的器件。这种器件将在发光、显示等领域产生重大作用。
发明内容
发明目的:为了制备一种能够同时产生光电效应与电致发光的器件,本发明所要解决的技术问题是提供了一种异质结纳米棒以及由此构成的器件及其制备方法。
为实现上述目的,上述的异质结纳米棒以及由此构成的器件的制备方法,包括以下步骤:
第一步,制备异质结纳米棒
1.采用CdO粉和磷酸正十八脂溶解在三正辛基氧膦中,合成Cd—ODPA复合物;
2.在合适的温度下注入S与三辛基(TOP)的混合物,搅拌;
3.注入硒的TOP溶液;
4.将得到的硫化镉/硒化镉纳米棒沉淀溶解在氯仿中;
5.将十八烯、油酸和乙酸锌混合均匀,脱气、搅拌后,将2毫升的CdS/CdSe纳米棒溶液注入;
6.将反应混合物蒸发、加热,并在加热过程中,将硒的TOP溶液从顶部慢慢注入到反应混合物中,然后冷却至室温;由此产生含异质结纳米棒的溶液;
7.用氯仿、甲醇的混合溶剂沉淀法纯化、离心分离,得到异质结纳米棒;
第二步,制备含异质结纳米棒的器件
1.将 PEDOT:PSS旋涂到ITO玻璃衬底上,退火;
2.转移到手套箱中,退火;
3.将TFB:2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌的间二甲苯溶液旋铸在步骤2的退火板上;
4.旋涂异质结纳米棒或C/S量子点,随后退火;
5.旋涂氧化锌的丁醇溶液,然后退火;
6.将样品取出手套箱,采用电子束蒸发沉积Al阴极;
7.将该样品带回手套箱,采用一个环氧玻璃盖玻片封装。
作为优选,所述Al电极的厚度为50-200纳米。
上述的异质结纳米棒及其器件在显示、发光等方面的应用。
有益效果:本发明充分利用了CdS/CdSe异质结对材料能带的调控作用,以及异质结所具备快速光子运输、聚集、发射的优点。本发明中的异质结纳米棒能够作为电荷分离与合并的中心,因此能够同时具备光电效应与电致发光的功能。
本发明具有以下优点:采用本发明的方法制备的含异质结纳米棒的器件可以同时具备光电效应与电致发光的功能。也就是说,它既可以作为显示器,又可以作为光源。因此,它可以一方面接收光信号产生电,又可以接收电信号产生光。进一步,采用一束光可以调节其显示的内容,其显示的内容所发出的光又可以控制另一台显示器显示的内容。如此反复,可以实现显示器之间的交互作用。
具体实施方式
下面结合具体实施例对本发明作更进一步的举例说明。
实施例:
第一步,制备异质结纳米棒
1.将0.128克CdO粉和0.668克磷酸正十八脂溶解在2克的三正辛基氧膦(TOPO)中;
2.在150℃ 进行脱气30分钟,然后在氮气气氛下加热到370℃,生成Cd—ODPA复合物;
3.将16毫克S溶于1.5毫升的三辛基(TOP)中,混合均匀,将它在370℃快速注入步骤2的产物中;
4.在330℃搅拌20分钟;
5.将反应混合物冷却到250℃;
6. 将20毫克硒溶解在1毫升的TOP中;然后缓缓加入步骤5的混合物中;
7.10分钟后,将反应混合物冷却至室温,得到的硫化镉/硒化镉纳米棒沉淀、再溶解在4毫升氯仿中;
8.将6毫升的十八烯、1.13 g油酸和 0.184克乙酸锌混合均匀, 在150°C进行脱气30分钟,然后在250°C在N2气氛下搅拌1小时,将2毫升的CdS/CdSe纳米棒溶液注入;
9. 将反应混合物在60℃经过蒸发氯仿锌油酸酯,反应混合物加热至300 ℃,在加热过程中,将20毫克硒溶解在1毫升TOP中,从顶部慢慢注入到反应混合物中,然后冷却至室温;由此产生含异质结纳米棒的溶液;
10.用氯仿、甲醇的混合溶剂沉淀法纯化、离心分离,得到异质结纳米棒;
第二步,制备含异质结纳米棒的器件
1.将 PEDOT:PSS旋涂到ITO玻璃衬底上,旋涂速度4000转/分钟,在120℃中退火5分钟;
2.转移到手套箱中,在180℃退火20分钟;
3.将7毫克/毫升的溶液的重量比为5:1 的 TFB:2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌的间二甲苯溶液旋铸在步骤2的退火板上,速度为3000转/分钟;
4.旋涂异质结纳米棒(60毫克/毫升)或C/S量子点(30毫克/毫升),速度为4000转/分钟,随后退火在180℃退火30分钟;
5.旋涂氧化锌的丁醇溶液(30毫克/毫升),速度6000转/分钟,然后在100℃退火30分钟;
6.将样品取出手套箱,采用电子束蒸发沉积100纳米厚的Al阴极;
7.将该样品带回手套箱,采用一个环氧玻璃盖玻片封装(NOA 86)。
Claims (4)
1.一种包含异质结纳米棒的器件,其特征在于,该器件包含硫化镉/硒化镉纳米棒,能同时具备光电效应与电致发光的功能。
2.根据权利要求1所述的一种包含异质结纳米棒的器件,其特征在于,其组成包含各向异性导电膜、Al电极、ZnO、异质结纳米棒、7,7',8,8'-四氟-2,3,5,6-四氰二甲基对苯醌、TCNQF4等部分。
3.根据权利要求2所述的一种包含异质结纳米棒的器件,其特征在于,所述Al电极的厚度为50-200纳米。
4.根据权利要求1所述的一种包含异质结纳米棒的器件的制备方法,其特征在于,该方法包含下列步骤:
第一步,制备异质结纳米棒
(1)采用CdO粉和磷酸正十八脂溶解在三正辛基氧膦中,合成Cd—ODPA复合物;
(2)在合适的温度下注入S与三辛基(TOP)的混合物,搅拌;
(3)注入硒的TOP溶液;
(4)将得到的硫化镉/硒化镉纳米棒沉淀溶解在氯仿中;
(5)将十八烯、油酸和乙酸锌混合均匀,脱气、搅拌后,将CdS/CdSe纳米棒溶液注入;
(6)将反应混合物蒸发、加热,并在加热过程中,将硒的TOP溶液从顶部慢慢注入到反应混合物中,然后冷却至室温;由此产生含异质结纳米棒的溶液;
(7)用氯仿、甲醇的混合溶剂沉淀法纯化、离心分离,得到异质结纳米棒;
第二步,制备含异质结纳米棒的器件
(1)将 PEDOT:PSS旋涂到ITO玻璃衬底上,退火;
(2)转移到手套箱中,退火;
(3)将TFB:2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌的间二甲苯溶液旋铸在步骤2的退火板上;
(4)旋涂异质结纳米棒或C/S量子点,随后退火;
(5)旋涂氧化锌的丁醇溶液,然后退火;
(6)将样品取出手套箱,采用电子束蒸发沉积Al阴极;
(7)将该样品带回手套箱,采用一个环氧玻璃盖玻片封装。
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WO2015144288A1 (en) * | 2014-03-26 | 2015-10-01 | Merck Patent Gmbh | A polarized light emissive device |
CN106353847A (zh) * | 2016-10-18 | 2017-01-25 | Tcl集团股份有限公司 | 一种CdSe/CdS纳米棒、偏振薄膜及其制备方法 |
CN106374051A (zh) * | 2016-11-15 | 2017-02-01 | Tcl集团股份有限公司 | 一种qled、制备方法及发光装置 |
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CN1610062A (zh) * | 2003-07-19 | 2005-04-27 | 三星电子株式会社 | 合金型半导体纳米晶体及其制备方法 |
WO2015144288A1 (en) * | 2014-03-26 | 2015-10-01 | Merck Patent Gmbh | A polarized light emissive device |
CN106353847A (zh) * | 2016-10-18 | 2017-01-25 | Tcl集团股份有限公司 | 一种CdSe/CdS纳米棒、偏振薄膜及其制备方法 |
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