CN107093638A - 一种光电器件及其制备方法 - Google Patents

一种光电器件及其制备方法 Download PDF

Info

Publication number
CN107093638A
CN107093638A CN201710315015.0A CN201710315015A CN107093638A CN 107093638 A CN107093638 A CN 107093638A CN 201710315015 A CN201710315015 A CN 201710315015A CN 107093638 A CN107093638 A CN 107093638A
Authority
CN
China
Prior art keywords
nanometer rods
hetero
junctions
solution
tetra
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710315015.0A
Other languages
English (en)
Inventor
不公告发明人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Jiao In Nano Science And Technology Co Ltd
Original Assignee
Suzhou Jiao In Nano Science And Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Jiao In Nano Science And Technology Co Ltd filed Critical Suzhou Jiao In Nano Science And Technology Co Ltd
Priority to CN201710315015.0A priority Critical patent/CN107093638A/zh
Publication of CN107093638A publication Critical patent/CN107093638A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
    • H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Luminescent Compositions (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明公开了一种能同时产生光电效应与电致发光的器件及其制备方法，该材料由一种硫化镉/碲化镉异质结纳米棒经封装而来，具体包含各向异性导电膜、Al电极、ZnO、异质结纳米棒、7,7',8,8'‑四氟‑2,3,5,6‑四氰二甲基对苯醌、TCNQF4等部分。本发明还公开了这种器件的制备方法。

Description

一种光电器件及其制备方法
技术领域
本发明涉及半导体领域，具体涉及一种能同时产生光电效应与电致发光的器件及其制备方法。
背景技术
由于纳米材料尤其是量子点、纳米异质结具备与大块材料不同的能带结构，在光电领域具备巨大的应用潜力。如中国发明专利CN103943733A公开了一种基于垂直纳米线的LED超平行光源的制备方法,其光源采用垂直硅纳米线的Si-CdS异质pn结,微透镜采用凹面镜。制备方法具体包括:首先制备圆点掩模板以确定硅纳米线的大小;然后使用ICP-RIE干法刻蚀技术制备硅纳米线;并且热氧化硅纳米线,去除硅纳米线顶端部分部氧化层;溅射多晶CdS薄膜,以形成Si-CdS异质结;最后以Si-CdS异质结为中心,采用淀积技术得到凹面镜,并且,凹面镜的轮廓为抛物线形。该发明利用硅基纳米Si-CdS异质pn结的发光特性,结合微型凹面镜制备工艺,实现了简单、集成、高效的超平行光的发射。
中国发明专利CN105742430A提供了一种LED外延结构,包括衬底,依次层叠形成在所述衬底上的GaN成核层、非掺杂GaN层、N型GaN层、异质结层以及P型GaN层;还包括设置在所述N型GaN层与所述异质结层之间的SiNx层,所述SiNx层形成有若干贯通的纳米孔洞。由于SiNx层具有纳米多孔结构,能有效降低异质结层形成的有源区的位错密度,从而减少有源区的非辐射复合中心,提高所述LED外延结构的内量子效率。另外,原位生长的具有纳米多孔结构的SiNx层还能减小光的全反射损失,提高所述LED外延结构的出光效率。该方法方法简单易实施,不但工艺成本低,而且能够有效保证产品良率。
电致发光是光电领域另一个重要的问题，也是当前所有显示器及显示技术的基础。近几十年以来，显示技术也在不断进行更新换代，人们不断寻找更低耗、有效的发光技术。如中国发明专利102394263公开了一种增强n-ZnO/AlN/p-GaN发光二极管的电致发光性能的方法，该方法是在n-ZnO/AlN/p-GaN发光二极管的n-ZnO薄膜中插入一层Ag纳米颗粒，利用Ag局域态表面等离激元与ZnO近带边发光强的相互耦合作用，来提高n-ZnO/AlN/p-GaN异质结发光二极管电致发光性能。实验发现Ag纳米颗粒的局域态表面等离激元共振峰与ZnO近带边发光峰的位置相近，满足共振耦合条件，且粗糙的Ag纳米颗粒的表面有利于等离激元有效耦合成光且能够明显提高光的抽取效率。利用该发明，显著提高了n-ZnO/AlN/p-GaN异质结发光二极管电致发光性能。
中国发明专利102308669A提供了一种包括通过从场发射器阴极跨过一间隙将电子注入纳米结构半导体材料而发光的方法和装置,电子从分开的场发射器发出且通过穿过间隙的电压朝着形成阳极的一部分的纳米结构材料的表面加速。在纳米结构材料处,电子经过电子-空穴(e-h)复合而产生电致发光(EL)发射。在优选的实施例照明装置中,真空外壳容纳场发射器阴极。该真空外壳也容纳阳极,该阳极与所述阴极隔开一间隙且设置为接收从阴极发射的电子。该阳极包括半导体发光纳米结构,其接收来自阴极的电子注入且响应于该电子注入产生光子。外部电极接触允许在阳极和阴极间施加电压差,以从阴极激发电子发射并从该阳极的半导体发光纳米结构产生光子发射。
然而，当前，随着半导体的发展，能够产生光电效应的器件已经非常多，能够产生电致发光的器件也非常多，但是，当前产生光电效应与电致发光的器件是分立的，尚未出现能够同时产生光电效应与电致发光的器件。这种器件将在发光、显示等领域产生重大作用。
发明内容
发明目的：为了制备一种能够同时产生光电效应与电致发光的器件，本发明所要解决的技术问题是提供了一种异质结纳米棒以及由此构成的器件及其制备方法。
为实现上述目的，上述的异质结纳米棒以及由此构成的器件的制备方法，包括以下步骤：
第一步，制备异质结纳米棒
1.采用CdO粉和磷酸正十八脂溶解在三正辛基氧膦中，合成Cd—ODPA复合物；
2.在合适的温度下注入S与三辛基（TOP）的混合物，搅拌；
3.注入碲的TOP溶液；
4.将得到的硫化镉/碲化镉纳米棒沉淀溶解在氯仿中；
5.将十八烯、油酸和乙酸锌混合均匀,脱气、搅拌后，将2毫升的CdS/CdTe纳米棒溶液注入；
6.将反应混合物蒸发、加热，并在加热过程中，将碲的TOP溶液从顶部慢慢注入到反应混合物中，然后冷却至室温；由此产生含异质结纳米棒的溶液；
7．用氯仿、甲醇的混合溶剂沉淀法纯化、离心分离,得到异质结纳米棒；
第二步，制备含异质结纳米棒的器件
1．将 PEDOT:PSS旋涂到ITO玻璃衬底上，退火；
2．转移到手套箱中，退火；
3．将TFB：2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌的间二甲苯溶液旋铸在步骤2的退火板上；
4．旋涂异质结纳米棒或C／S量子点，随后退火；
5．旋涂氧化锌的丁醇溶液，然后退火；
6．将样品取出手套箱，采用电子束蒸发沉积Al阴极；
7．将该样品带回手套箱，采用一个环氧玻璃盖玻片封装。
作为优选，所述Al电极的厚度为50-200纳米。
作为优选，硒的TOP溶液的浓度范围为10g/L~50g/L。
作为优选，S的三辛基（TOP）的浓度范围为5g/L~20g/L。
作为优选，CdS、CdTe纳米棒的晶粒直径在15纳米以内。
上述的异质结纳米棒及其器件在显示、发光等方面的应用。
有益效果：本发明充分利用了CdS/CdTe异质结对材料能带的调控作用，以及异质结所具备快速光子运输、聚集、发射的优点。本发明中的异质结纳米棒能够作为电荷分离与合并的中心，因此能够同时具备光电效应与电致发光的功能。
本发明具有以下优点：采用本发明的方法制备的含异质结纳米棒的器件可以同时具备光电效应与电致发光的功能。也就是说，它既可以作为显示器，又可以作为光源。因此，它可以一方面接收光信号产生电，又可以接收电信号产生光。进一步，采用一束光可以调节其显示的内容，其显示的内容所发出的光又可以控制另一台显示器显示的内容。如此反复，可以实现显示器之间的交互作用。
具体实施方式
下面结合具体实施例对本发明作更进一步的举例说明。
实施例：
第一步，制备异质结纳米棒
1.将0.128克CdO粉和0.668克磷酸正十八脂溶解在2克的三正辛基氧膦（TOPO）中；
2.在150℃ 进行脱气30分钟，然后在氮气气氛下加热到370℃,生成Cd—ODPA复合物；
3.将16毫克S溶于1.5毫升的三辛基（TOP）中,混合均匀,将它在370℃快速注入步骤2的产物中；
4.在330℃搅拌20分钟；
5.将反应混合物冷却到250℃；
6. 将15毫克碲溶解在1毫升的TOP中;然后缓缓加入步骤5的混合物中；
7.10分钟后，将反应混合物冷却至室温，得到的硫化镉/碲化镉纳米棒沉淀、再溶解在4毫升氯仿中；
8.将6毫升的十八烯、1.13 g油酸和 0.184克乙酸锌混合均匀, 在150°C进行脱气30分钟，然后在250°C在N2气氛下搅拌1小时，将2毫升的CdS/CdTe纳米棒溶液注入；
9. 将反应混合物在60℃经过蒸发氯仿锌油酸酯，反应混合物加热至300 ℃，在加热过程中，将18毫克碲溶解在1毫升TOP中，从顶部慢慢注入到反应混合物中，然后冷却至室温；由此产生含异质结纳米棒的溶液；
10．用氯仿、甲醇的混合溶剂沉淀法纯化、离心分离,得到异质结纳米棒；
第二步，制备含异质结纳米棒的器件
1．将 PEDOT:PSS旋涂到ITO玻璃衬底上，旋涂速度4000转/分钟，在120℃中退火5分钟；
2．转移到手套箱中，在180℃退火20分钟；
3．将7毫克/毫升的溶液的重量比为5:1 的 TFB：2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌的间二甲苯溶液旋铸在步骤2的退火板上，速度为3000转/分钟；
4．旋涂异质结纳米棒（60毫克/毫升）或C／S量子点（30毫克/毫升），速度为4000转/分钟，随后退火在180℃退火30分钟；
5．旋涂氧化锌的丁醇溶液（30毫克/毫升），速度6000转／分钟，然后在100℃退火30分钟；
6．将样品取出手套箱，采用电子束蒸发沉积100纳米厚的Al阴极；
7．将该样品带回手套箱，采用一个环氧玻璃盖玻片封装。

Claims (7)

1.一种包含异质结纳米棒的器件，其特征在于，该器件包含硫化镉/碲化镉纳米棒，能同时具备光电效应与电致发光的功能。
2.根据权利要求1所述的一种包含异质结纳米棒的器件，其特征在于，其特征在于，该异质结中CdS、CdTe的晶粒直径在15纳米以内。
3.根据权利要求1所述的一种包含异质结纳米棒的器件，其特征在于，其组成包含各向异性导电膜、Al电极、ZnO、异质结纳米棒、7,7',8,8'-四氟-2,3,5,6-四氰二甲基对苯醌、TCNQF4等部分。
4.根据权利要求3所述的一种包含异质结纳米棒的器件，其特征在于，所述Al电极的厚度为50-200纳米。
5.根据权利要求3所述的一种包含异质结纳米棒的器件的制备方法，其特征在于，该方法包含下列步骤：
第一步，制备异质结纳米棒
（1）采用CdO粉和磷酸正十八脂溶解在三正辛基氧膦中，合成Cd—ODPA复合物；
（2）在合适的温度下注入S与三辛基（TOP）的混合物，搅拌；
（3）注入碲的TOP溶液；
（4）将得到的硫化镉/碲化镉纳米棒沉淀溶解在氯仿中；
（5）将十八烯、油酸和乙酸锌混合均匀,脱气、搅拌后，将CdS/CdTe纳米棒溶液注入；
（6）将反应混合物蒸发、加热，并在加热过程中，将碲的TOP溶液从顶部慢慢注入到反应混合物中，然后冷却至室温；由此产生含异质结纳米棒的溶液；
（7）用氯仿、甲醇的混合溶剂沉淀法纯化、离心分离,得到异质结纳米棒；
第二步，制备含异质结纳米棒的器件
（1）将 PEDOT:PSS旋涂到ITO玻璃衬底上，退火；
（2）转移到手套箱中，退火；
（3）将TFB：2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌的间二甲苯溶液旋铸在步骤2的退火板上；
（4）旋涂异质结纳米棒或C／S量子点，随后退火；
（5）旋涂氧化锌的丁醇溶液，然后退火；
（6）将样品取出手套箱，采用电子束蒸发沉积Al阴极；
（7）将该样品带回手套箱，采用一个环氧玻璃盖玻片封装。
6.根据权利要求5所述的一种包含异质结纳米棒的器件，其特征在于，所述
CdO粉和磷酸的重量比为1:4～1:8。
7.根据权利要求5所述的一种包含异质结纳米棒的器件，其特征在于，所述
硒的TOP溶液的浓度范围为10g/L~50g/L。
CN201710315015.0A 2017-05-07 2017-05-07 一种光电器件及其制备方法 Pending CN107093638A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710315015.0A CN107093638A (zh) 2017-05-07 2017-05-07 一种光电器件及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710315015.0A CN107093638A (zh) 2017-05-07 2017-05-07 一种光电器件及其制备方法

Publications (1)

Publication Number Publication Date
CN107093638A true CN107093638A (zh) 2017-08-25

Family

ID=59638497

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710315015.0A Pending CN107093638A (zh) 2017-05-07 2017-05-07 一种光电器件及其制备方法

Country Status (1)

Country Link
CN (1) CN107093638A (zh)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1610062A (zh) * 2003-07-19 2005-04-27 三星电子株式会社 合金型半导体纳米晶体及其制备方法
CN102473800A (zh) * 2009-07-07 2012-05-23 佛罗里达大学研究基金会公司 稳定的且所有溶液可加工的量子点发光二极管
CN103904178A (zh) * 2014-04-11 2014-07-02 浙江大学 量子点发光器件
CN104662123A (zh) * 2012-07-25 2015-05-27 Qd视光有限公司 制造包括量子点的组分的方法、方法以及产品
CN105478148A (zh) * 2014-09-15 2016-04-13 中国科学院理化技术研究所 掺杂的量子点催化剂及其制备方法、包含掺杂的量子点催化剂的制氢体系及制氢方法
WO2017005699A1 (de) * 2015-07-03 2017-01-12 Cynora Gmbh Organische moleküle zur verwendung in optoelektronischen vorrichtungen
CN106374051A (zh) * 2016-11-15 2017-02-01 Tcl集团股份有限公司 一种qled、制备方法及发光装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1610062A (zh) * 2003-07-19 2005-04-27 三星电子株式会社 合金型半导体纳米晶体及其制备方法
CN102473800A (zh) * 2009-07-07 2012-05-23 佛罗里达大学研究基金会公司 稳定的且所有溶液可加工的量子点发光二极管
CN104662123A (zh) * 2012-07-25 2015-05-27 Qd视光有限公司 制造包括量子点的组分的方法、方法以及产品
CN103904178A (zh) * 2014-04-11 2014-07-02 浙江大学 量子点发光器件
CN105478148A (zh) * 2014-09-15 2016-04-13 中国科学院理化技术研究所 掺杂的量子点催化剂及其制备方法、包含掺杂的量子点催化剂的制氢体系及制氢方法
WO2017005699A1 (de) * 2015-07-03 2017-01-12 Cynora Gmbh Organische moleküle zur verwendung in optoelektronischen vorrichtungen
CN106374051A (zh) * 2016-11-15 2017-02-01 Tcl集团股份有限公司 一种qled、制备方法及发光装置

Similar Documents

Publication Publication Date Title
US7615800B2 (en) Quantum dot light emitting layer
US7605062B2 (en) Doped nanoparticle-based semiconductor junction
US20050230673A1 (en) Colloidal quantum dot light emitting diodes
US20110290310A1 (en) Solar cell and solar cell manufacturing method
WO2005071764A1 (ja) 量子ドット分散発光素子およびその製造方法
KR20140113587A (ko) 다중 헤테로접합 나노입자, 이의 제조 방법 및 이를 포함하는 물품
CN103346221A (zh) 一种无机金属氧化物作为电子传输层的量子点发光二极管及其制备方法
JP2010517291A (ja) ドープされたナノ粒子半導体電荷輸送層
WO2021136044A1 (zh) 一种量子点发光二极管及其制备方法
CN109980126B (zh) 载流子传输材料、载流子传输薄膜及其制备方法和应用
JPH06103757B2 (ja) ダイヤモンド電子装置
CN110752319B (zh) 核壳纳米材料及其制备方法和量子点发光二极管
TW200541070A (en) Semiconductor material and semiconductor element using the same
CN105720148B (zh) Cu掺杂ZnO为有源层的ZnO‑GaN组合紫外发光管及其制备方法
CN105789399B (zh) p型宽禁带氧化物和ZnO组合垂直结构发光器件及其制备方法
CN107093638A (zh) 一种光电器件及其制备方法
KR100974626B1 (ko) 접촉 구조의 나노로드 반도체 소자 및 그 제조 방법
CN107123709A (zh) 一种能同时产生光电效应与电致发光的器件及其制备方法
CN107082446A (zh) 一种硫化镉/碲化镉异质结纳米棒及其制备方法
CN113046077B (zh) 一种复合材料、量子点发光二极管及其制备方法
CN107123708A (zh) 一种异质结纳米棒及其制备方法
CN109935705B (zh) 空穴注入材料及其制备方法和qled器件
CN113540299B (zh) 一种基于p-GaN/CsPbBr3/n-ZnO异质结的发光二极管及制备方法
CN216902949U (zh) 钙钛矿太阳能电池和氮化镓基led集成结构及半导体器件
CN113130795B (zh) 一种纳米材料及其制备方法与量子点发光二极管

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20170825