CN107123708A - 一种异质结纳米棒及其制备方法 - Google Patents

一种异质结纳米棒及其制备方法 Download PDF

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CN107123708A
CN107123708A CN201710315021.6A CN201710315021A CN107123708A CN 107123708 A CN107123708 A CN 107123708A CN 201710315021 A CN201710315021 A CN 201710315021A CN 107123708 A CN107123708 A CN 107123708A
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杨昱
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Abstract

本发明是一种异质结纳米棒及其制备方法。本发明公开了一种硫化镉/硒化镉纳米棒，该异质结同时具备光电效应与电致发光的功能，其中CdS、CdSe的晶粒直径在15纳米以内。本发明还公开了这种器件的制备方法。

Description

一种异质结纳米棒及其制备方法
技术领域
本发明涉及纳米材料领域，具体涉及一种异质结纳米棒及其制备方法。
背景技术
当前，寻找新型大功率光源已成为研究热点，最常见的如LED发光器件。人们不断提出新的结构来达到设定的目标。在过去十年中,人们在纳米材料发光器件领域开展了大量的研究工作。中国发明专利CN103943733A公开了一种基于垂直纳米线的LED超平行光源的制备方法,其光源采用垂直硅纳米线的Si-CdS异质pn结,微透镜采用凹面镜。制备方法具体包括:首先制备圆点掩模板以确定硅纳米线的大小;然后使用ICP-RIE干法刻蚀技术制备硅纳米线;并且热氧化硅纳米线,去除硅纳米线顶端部分部氧化层;溅射多晶CdS薄膜,以形成Si-CdS异质结;最后以Si-CdS异质结为中心,采用淀积技术得到凹面镜,并且,凹面镜的轮廓为抛物线形。本发明利用硅基纳米Si-CdS异质pn结的发光特性,结合微型凹面镜制备工艺,实现了简单、集成、高效的超平行光的发射。
电致发光是光电领域另一个重要的问题，也是当前所有显示器及显示技术的基础。近几十年以来，显示技术也在不断进行更新换代，人们不断寻找更低耗、有效的发光技术。如中国发明专利102308669A提供了一种包括通过从场发射器阴极跨过一间隙将电子注入纳米结构半导体材料而发光的方法和装置,电子从分开的场发射器发出且通过穿过间隙的电压朝着形成阳极的一部分的纳米结构材料的表面加速。在纳米结构材料处,电子经过电子-空穴(e-h)复合而产生电致发光(EL)发射。在优选的实施例照明装置中,真空外壳容纳场发射器阴极。该真空外壳也容纳阳极,该阳极与所述阴极隔开一间隙且设置为接收从阴极发射的电子。该阳极包括半导体发光纳米结构,其接收来自阴极的电子注入且响应于该电子注入产生光子。外部电极接触允许在阳极和阴极间施加电压差,以从阴极激发电子发射并从该阳极的半导体发光纳米结构产生光子发射。本发明的实施例也包括利用纳米结构半导体材料作为传统平面LED和纳米线阵列发光二极管和CFL的磷光体。对于在传统平面LED中的使用,该纳米结构可以采用量子点、纳米管、分枝树状纳米结构、纳米花、四角状结构、三角状结构、轴向异质结构纳米线异质结构的形式。
中国发明专利102394263公开了一种增强n-ZnO/AlN/p-GaN发光二极管的电致发光性能的方法，该方法是在n-ZnO/AlN/p-GaN发光二极管的n-ZnO薄膜中插入一层Ag纳米颗粒，利用Ag局域态表面等离激元与ZnO近带边发光强的相互耦合作用，来提高n-ZnO/AlN/p-GaN异质结发光二极管电致发光性能。实验发现Ag纳米颗粒的局域态表面等离激元共振峰与ZnO近带边发光峰的位置相近，满足共振耦合条件，且粗糙的Ag纳米颗粒的表面有利于等离激元有效耦合成光且能够明显提高光的抽取效率。利用本发明，显著提高了n-ZnO/AlN/p-GaN异质结发光二极管电致发光性能。
然而，当前，随着半导体的发展，能够产生光电效应的器件已经非常多，能够产生电致发光的器件也非常多，但是，当前产生光电效应与电致发光的器件是分立的，尚未出现能够同时产生光电效应与电致发光的器件。这种器件将在发光、显示等领域产生重大作用。
发明内容
发明目的：为了制备一种能够同时产生光电效应与电致发光的电子元件，本发明所要解决的技术问题是提供了一种异质结纳米棒及其制备方法。
为实现上述目的，上述的异质结纳米棒的制备方法，包括以下步骤：
1.采用CdO粉和磷酸正十八脂溶解在三正辛基氧膦中，合成Cd—ODPA复合物；
2.在合适的温度下注入S与三辛基（TOP）的混合物，搅拌；
3.注入硒的TOP溶液；
4.将得到的硫化镉/硒化镉纳米棒沉淀溶解在氯仿中；
5.将十八烯、油酸和乙酸锌混合均匀,脱气、搅拌后，将2毫升的CdS/CdSe纳米棒溶液注入；
6.将反应混合物蒸发、加热，并在加热过程中，将硒的TOP溶液从顶部慢慢注入到反应混合物中，然后冷却至室温；由此产生含异质结纳米棒的溶液；
7．用氯仿、甲醇的混合溶剂沉淀法纯化、离心分离,得到异质结纳米棒；
作为优选，CdO粉和0.668克磷酸的重量比为1:4～1:8。
作为优选，硒的TOP溶液的浓度范围为10g/L~50g/L。
作为优选，S的三辛基（TOP）的浓度范围为5g/L~20g/L。
作为优选，CdS、CdSe纳米棒的晶粒直径在15纳米以内。
上述的异质结纳米棒在显示、发光等方面的应用。
有益效果：本发明充分利用了CdS/CdSe异质结及其成分、形状、尺寸对材料能带的调控作用，以及异质结所具备快速光子运输、聚集、发射的优点。本发明中的异质结纳米棒能够作为电子、空穴分离与合并的中心，具备快速相应性能与激子倍增效应，因此能够同时具备光电效应与电致发光的功能，它可以一方面接收光信号产生电，又可以接收电信号产生光。。采用它构成的显示器，既可以作为显示器，又可以作为光源。因此进一步，采用一束光可以调节其显示的内容，其显示的内容所发出的光又可以控制另一台显示器显示的内容。如此反复，可以实现显示器之间的交互作用。
具体实施方式
下面结合实施例对本发明作更进一步的说明。
1.将0.128克CdO粉和0.668克磷酸正十八脂溶解在2克的三正辛基氧膦（TOPO）中；
2.在150℃ 进行脱气30分钟，然后在氮气气氛下加热到370℃,生成Cd—ODPA复合物；
3.将16毫克S溶于1.5毫升的三辛基（TOP）中,混合均匀,将它在370℃快速注入步骤2的产物中；
4.在330℃搅拌20分钟；
5.将反应混合物冷却到250℃；
6. 将20毫克硒溶解在1毫升的TOP中;然后缓缓加入步骤5的混合物中；
7.10分钟后，将反应混合物冷却至室温，得到的硫化镉/硒化镉纳米棒沉淀、再溶解在4毫升氯仿中；
8.将6毫升的十八烯、1.13 g油酸和 0.184克乙酸锌混合均匀, 在150°C进行脱气30分钟，然后在250°C在N2气氛下搅拌1小时，将2毫升的CdS/CdSe纳米棒溶液注入；
9. 将反应混合物在60℃经过蒸发氯仿锌油酸酯，反应混合物加热至300 ℃，在加热过程中，将20毫克硒溶解在1毫升TOP中，从顶部慢慢注入到反应混合物中，然后冷却至室温；由此产生含异质结纳米棒的溶液；
10．用氯仿、甲醇的混合溶剂沉淀法纯化、离心分离，得到异质结纳米棒。

Claims (6)

1.一种异质结纳米棒，其特征在于，该异质结纳米棒为硫化镉/硒化镉纳米棒。
2.一种异质结纳米棒，其特征在于，该异质结中CdS、CdSe的晶粒直径在15纳米以内。
3.根据权利要求1所述的一种包含异质结纳米棒的器件的制备方法，其特征在于，该方法包含下列步骤：
1）采用CdO粉和磷酸正十八脂溶解在三正辛基氧膦中，合成Cd—ODPA复合物；
2）在合适的温度下注入硫与三辛基（TOP）的混合物，搅拌；
3）注入硒的TOP溶液；
4）将得到的硫化镉/硒化镉纳米棒沉淀溶解在氯仿中；
5）将十八烯、油酸和乙酸锌混合均匀,脱气、搅拌后，将CdS/CdSe纳米棒溶液注入；
6）将反应混合物蒸发、加热，并在加热过程中，将硒的TOP溶液从顶部慢慢注入到反应混合物中，然后冷却至室温；由此产生含异质结纳米棒的溶液；
7）用氯仿、甲醇的混合溶剂沉淀法纯化、离心分离,得到异质结纳米棒。
4.根据权利要求3所述的一种包含异质结纳米棒的器件，其特征在于，步骤1所述
CdO粉和0.668克磷酸的重量比为1:4～1:8。
5.根据权利要求3所述的一种包含异质结纳米棒的器件，其特征在于，步骤2所述
硫的三辛基（TOP）的浓度范围为5g/L~20g/L。
6.根据权利要求3所述的一种包含异质结纳米棒的器件，其特征在于，步骤3所述
硒的TOP溶液的浓度范围为10g/L~50g/L。
CN201710315021.6A 2017-05-07 2017-05-07 一种异质结纳米棒及其制备方法 Pending CN107123708A (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1610062A (zh) * 2003-07-19 2005-04-27 三星电子株式会社 合金型半导体纳米晶体及其制备方法
WO2015144288A1 (en) * 2014-03-26 2015-10-01 Merck Patent Gmbh A polarized light emissive device
CN106353847A (zh) * 2016-10-18 2017-01-25 Tcl集团股份有限公司 一种CdSe/CdS纳米棒、偏振薄膜及其制备方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1610062A (zh) * 2003-07-19 2005-04-27 三星电子株式会社 合金型半导体纳米晶体及其制备方法
WO2015144288A1 (en) * 2014-03-26 2015-10-01 Merck Patent Gmbh A polarized light emissive device
CN106353847A (zh) * 2016-10-18 2017-01-25 Tcl集团股份有限公司 一种CdSe/CdS纳米棒、偏振薄膜及其制备方法

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