CN107108200B - 用于密封非磁性封装的盖和方法 - Google Patents

用于密封非磁性封装的盖和方法 Download PDF

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CN107108200B
CN107108200B CN201580058990.7A CN201580058990A CN107108200B CN 107108200 B CN107108200 B CN 107108200B CN 201580058990 A CN201580058990 A CN 201580058990A CN 107108200 B CN107108200 B CN 107108200B
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C.卡普斯塔
M.艾米
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Abstract

一种用于密封气密封装的非磁性盖。该盖包括钼基底，具有溅射的粘合层和铜籽晶层。该盖还包括镀敷的钯焊料基层，且具有附接于该盖的密封表面的金/锡焊料预型件。

Description

用于密封非磁性封装的盖和方法
相关申请的交叉引用
本申请请求享有于2014年10月31日提交的美国专利申请第14/529410号的优先权，其全部内容通过参照而包含本文中。
背景。
技术领域
本发明的实施例大体上涉及对温度、湿度和/或大气组分敏感的构件的封装。具体的实施例涉及适合用于气密密封封装的盖，该封装容纳适合用于磁共振成像(“MRI”)装备和需要非磁性构件的其它应用中的敏感构件，诸如微机电系统(“MEMS”)。
技术讨论
MEMS是具有从大约20微米到大约1毫米(0.02至1.0mm)的范围内的其最大尺寸的器件。这些非常小的电气机械在许多应用中是有用的，例如：从喷墨打印机的墨盒喷射墨水以将文字放到页面上；测量车辆或手持设备(诸如蜂窝电话或游戏控制器)的加速度；转换空气压力波或表面振动以记录声音；在纤维阵列之间切换光学信号；等等。
通常，MEMS可用于在小足迹或体积包络内可靠地提供高响应(小时间常数)的机电功能，诸如运动感测。因此，多年来期望利用MEMS用于MRI系统内的感测和控制。然而，必须在MRI系统中提供“非磁性”(即，既不是铁磁性也不是顺磁性)的构件。
一直以来，MEMS封装依靠于铁磁性和/或顺磁性的材料。这样的情况部分地是因为，从非磁性材料(例如陶瓷或塑料)制造的封装理解为需要对封入封装内的MEMS有带风险的热损伤(例如，钎焊)和/或化学损伤(例如，挥发性或水分可渗透的粘合剂)的封闭方法。MEMS对它们的环境、颗粒或化学上是敏感的，且还对封装处理条件敏感，因此需要控制条件和封装环境的过程。实际上，MEMS代表在封装中需要特别注意的“敏感”构件的一个种类。该种类的其它组成物可包括压电、顺磁性和形状记忆合金器件。
鉴于以上，期望在非磁性气密封装内提供敏感构件。提供此封装的关键难题是设计将敏感构件结合到开放的非磁性封装腔中然后密封该封装腔的方法，而不对敏感构件引入热和/或化学损伤。
发明内容
本发明的实施例提供用于密封气密封装的非磁性盖。盖包括钼基底、溅射的粘合层、溅射的铜籽晶层和镀敷的钯焊料基层，以及附接在盖的密封表面处的金/锡焊料预型件。
本发明的方面设置为根据如下方法产生用于密封非磁性气密封装的非磁性可接缝密封的盖，该方法包括从钼坯料形成盖形基底；将包括一种或更多种材料(诸如：钛、钽或铬)或基本上由该一种或更多种材料构成的粘合层溅射到基底上；将铜籽晶层溅射到粘合层上；将钯焊料基层电镀到籽晶层上；和在盖的密封表面处附接金/锡焊料预型件。
本发明的其它方面提供用于产生非磁性MEMS封装的方法，该方法包括将MEMS器件结合在非磁性封装本体内，该磁性封装本体包括由非磁性金属密封环限定的密封边缘，以及将非磁性盖密封至封装本体的密封边缘，该非磁性盖具有包括金/锡焊料预型件的密封表面，金/锡焊料预型件被密封至封装本体的密封边缘。
本发明的还有其它方面提供用于密封气密封装的金属非磁性盖，该盖包括钼基底、物理气相沉积的粘合层、铜籽晶层、钯焊料基层和附接在盖的密封表面处的金/锡焊料预型件。
附图说明
参考附图阅读非限制性实施例的以下描述将更好地理解本发明，下面在附图中：
图1是根据本发明的实施例的非磁性盖的透视性部分截面图。
图2是非磁性封装本体的顶视图。
图3A至图3C是手套式操作箱的透视图和容纳在手套式操作箱中的定位器和接缝密封器的细节图。
图4是附接于图2的非磁性封装本体的本发明的实施例的部分截面图。
具体实施方式
下面将对本发明的示例性实施例进行详细参考，其示例在附图中示出。在任何可能之处，在不重复描述的情况下，贯穿附图使用的相同的参考符号指相同或相似的部分。尽管本发明的示例性实施例是关于其在MRI系统中的使用而描述，但本发明的实施例可适用于在可从非磁性封装受益的任何装置中使用。
如本文中所使用，用语“基本上”、“大体上”和“大约”指示相对于适合用于实现构件或组件的功能性目的的理想期望条件在能够适度地实现的制造和组装公差内的条件。
大体上参照图1至图4，在示例性实施例中，提供了如图1中所示的接缝可密封的非磁性盖100以用于密封如图2中所示的非磁性MEMS封装本体200。通过使用如图3A中所示的配置在干燥空气手套式操作箱310内的接缝密封器300将盖100密封到非磁性MEMS封装本体200上。接缝密封器300从其电极302逐渐地对盖表面100且对封装本体200的带图案的金属密封环250施加电流，从而将带有金/锡密封预型件150的盖与金属密封环250局部重熔在一起。接缝密封过程的完成产生了在图3C中的透视地示出且示为图4中的部分截面示意图的气密的非磁性MEMS封装400。
如在本文中使用的，“气密”意思是在保持在至少60psi的氦下两小时之后，使用氦精密泄漏测试器(例如，AlcatelTM ASM180 型)获得3x10-8 mBarr L/s或更小的氦泄漏速率，且在FC-40的125C溶液中未示出气泡，或同等的测试结果。
现在参照图1，盖100包括成形为盖的钼基底110。例如，基底110可被冲压或切割成平坦形状，或者其可被冲压或拉制成凹入或阶梯状形状。基底为至少大约5密耳(0.005英寸)厚，通常大约10密耳厚，但可以更厚。大体上，通过将干燥空气在封装400内维持在大气压力下(甚至是在降压空气货运期间)而没有基底的持久变形的期望来设定对于基底110的最小厚度。钼基底还合乎需要地提供有助于接缝密封过程的热阻和电阻。
盖100还在钼基底110上包括粘合层120，该粘合层120为至少大约500埃厚且可达到大约2000埃厚。粘合层可由钛或由类似的与钼相容的金属(诸如钽或铬)溅射到基底110上。在某些实施例中，物理气相沉积(PVD)的等同方法可代替溅射来使用。PVD过程包括阴极弧、电子束、阻性蒸发(resistive evaporative)、脉冲激光、和磁性溅射沉积技术。在某些实施例中，主要因为电镀或化学气相沉积(CVD)中的化学难度，涂布方法为磁性溅射。已发现溅射的粘合层更一致，且提供比镀敷或CVD粘合层更好的粘合，且溅射系统提供反向溅射(back sputter)能力以进一步改善粘合。相信与电化学或CVD技术相比，其它PVD技术同样适合。粘合层120被溅射到基底的相对的宽表面上，且溅射得至少足够厚使得溅射区域的边缘会合以覆盖基底的边缘；因此，粘合层的最小可接受厚度将根据基底的厚度而变化。粘合层120一般不比从两个宽表面覆盖基底的边缘所需的厚太多。
在粘合层120上，盖具有铜籽晶层130，该铜籽晶层130被溅射到至少大约1000埃厚。已发现铜在其与钛/钽/铬粘合层的相容性方面且在其对于电镀钯的接受性方面适合用于籽晶层130。籽晶层130不是直接溅射到钼上的，因为已发现粘合层120极大地增强籽晶层130至基底110的附接。在一些实施例中，籽晶层130可为大约2000埃厚，且在某些实施例中，籽晶层可为差不多大约6000埃厚。较厚的籽晶层帮助缓冲来自随后的电镀步骤的反蚀，且帮助覆盖基底的边缘且允许在没有额外的镀敷步骤的情况下容易地将钯镀敷到铜上。另一方面，增大的厚度增加成本和重量，且高导热性和导电性的铜的过大厚度可关于将盖接缝密封以封闭MEMS封装的随后的步骤引起问题。
在籽晶层130外，盖100包括大约1至2μm厚的钯焊料基层140，其中，该厚度再次选择成确保基底110的边缘被覆盖。钯焊料基层140通常电镀到铜籽晶层130上。因此，钯焊料基层140将覆盖盖100的所有表面，以便减轻铜籽晶层的变暗。在其它实施例中，焊料基层140可溅射到盖100的仅一个表面(密封表面104)上。然而，焊料基层到盖100的边缘上的保形性有助于增强焊料预型件的密封作用，如下面进一步论述的那样。在某些实施例中，金触击层145可电镀在籽晶层140与焊料基层130之间，以便增强焊料基层至籽晶层的附接。
在盖100的密封表面104上，在其边缘附近，金/锡焊料预型件150然后例如通过定位焊附接至焊料基层140。总的来说，盖100的材料和各种层厚度选择成以便盖具有足够高以使电流集中用于焊料预型件150的点缝密封的体电阻率，而非焊接盖自身。因此，本发明的盖100允许不强加盖或盖附接到的结构的整体加热的低功率接缝密封过程。因此，可能将该盖用于MEMS封装的气密密封，而没有对封装内的MEMS器件造成热损伤的风险。盖100还可包括在钯焊料基层140与焊料预型件150之间的金闪光层160。
现在参照图2和图4，适合用于由盖100封闭的MEMS封装本体200的示例包括壁201，壁201的顶上是大体上平坦的金属密封环250。密封环250因而限定封装本体的密封边缘。壁201包围腔204。在腔204内，MEM(微机电)器件210结合至封装本体200。
再次参照图3，定位和接缝密封的步骤是在手套式操作箱310内完成的，手套式操作箱310在干燥条件(小于大约-40℃的露点，0%的相对湿度，小于大约10000ppm的水蒸汽)下维持清洁的空气。在定位期间，将盖100置于封装本体200上，且将两个构件一起放置到手套式操作箱内的定位焊机320中。定位焊机320用于将盖100轻轻向下压且在一个或两个位置处将带有金/锡焊料预型件150的盖定位到金属密封环250上。在定位之前，盖100和封装本体200可被O2灰化/清洁且然后利用CDA(清洁干燥空气，如下面论述的那样)吹扫且在真空炉330中加热，真空炉330与手套式操作箱310连接且通向手套式操作箱310。为了接缝密封，在手套式操作箱内将封装本体200转移到接缝密封器300的可旋转台304上。
然后操作接缝密封器300以使台304与盖和本体一起旋转，同时缩回和伸出电极302，以便沿盖100的边缘102移动电极接头，使得预型件150和密封环250被逐渐地局部加热和焊接，以在焊料基层和相对的密封环之间形成气密焊接填角。在这点上，有益的是使基底110的边缘由焊料基层140和从属层120、130完全覆盖，以便形成一致的填角450，如图4中所示(需要更新图以示出填角在盖的侧边缘上延伸)。此外，使盖和封装本体在仅一个位置(电极302将在此开始接缝密封过程)处定位到一起是有益的。
根据本发明的方面，接缝密封(其为局部加热过程)能够代替钎焊(其众所周知用于密封焊料预型件)来使用。尽管钎焊对于密封封装(诸如本发明的封装400)是常规的，但结果是在钎焊期间获得的普遍的高温可使意在封闭在气密MEMS封装物品内的MEMS器件损伤和变形。然而，为了执行接缝密封，需要盖100必须能够允许局部加热。许多非磁性金属使得非常难以仅在局部区域中提供加热，因为此种金属趋向于为高导热和/或高导电的。因此，盖100的材料和层厚度被仔细地选择，以便使其热和电特性最佳化以用于接缝密封，接缝密封使用电阻焊来局部地加热且熔化预型件150。
如上文描述的过程导致气密且非磁性的MEMS封装400，其能够用于各种应用中，包括在MRI封壳内。因为大气压力下的干燥空气被捕获在封装400内，所以其也能够用在以前未考虑过MEMS的其它环境中。
本发明的实施例因此提供用于密封气密封装的非磁性盖。盖包括钼基底、溅射沉积的粘合层、铜籽晶层和钯焊料基层，以及附接在盖的密封表面处的金/锡焊料预型件。粘合层可为溅射的。可在溅射粘合层之前将基底反向溅射、化学蚀刻和/或机械蚀刻。焊料基层可为至少大约1000埃(1微米)厚。在一些实施例中，焊料基层可为不大于大约2微米(2μm)厚。盖还可在焊料基层上包括达到大约1000埃至2μm厚的电镀金涂层。盖可在附接金/锡预型件之前被真空烘烤。例如，盖可被真空烘烤以在钯焊料基层中实现小于大约6ppm的H浓度，从而减少可用于从焊料基层扩散到待由盖密封的封装中的H。盖可在其外侧边缘处具有为大约30密耳的角部半径。粘合层可为至少大约500埃厚。粘合层可为大约2000埃厚。籽晶层可为至少大约1000埃厚，或者大约2000埃厚。在一些实施例中，籽晶层可不大于大约6000埃厚。在一些实施例中，粘合层可包括一种或更多种材料，诸如：钛、钽或铬。例如，粘合层可包括钛，或者可基本上由钛构成。粘合层、籽晶层和焊料基层可至少覆盖基底的密封表面和限界该密封表面的基底的边缘。在一些实施例中，粘合层、籽晶层和焊料基层一致地覆盖基底。
本发明的方面设置为根据如下方法产生用于密封非磁性气密封装的非磁性可接缝密封的盖，该方法包括由钼坯料形成盖形基底；将包括一种或更多种材料(诸如：钛、钽或铬)或基本上由该一种或更多种材料构成的粘合层物理气相沉积(例如，溅射)到基底上；将铜籽晶层物理气相沉积(例如，溅射)到粘合层上；将钯焊料基层电镀到籽晶层上；和在盖的密封表面处附接金/锡焊料预型件。该方法还可包括在溅射粘合层之前将基底反向溅射、化学蚀刻或机械蚀刻中的至少一者。该方法还可包括在附接金/锡焊料预型件之前真空烘烤盖，例如，真空烘烤至焊料基层中的小于大约6ppm的H浓度。粘合层可基本上由钛构成。
本发明的其它方面提供用于产生非磁性气密封装的方法，该方法包括将敏感构件结合在由非磁性壁限定的内部腔内，该磁性壁具有由非磁性金属密封环限定的密封边缘，以及将非磁性盖密封到该密封边缘，其具有包括金/锡焊料预型件的密封表面，该金/锡焊料预型件被密封至该密封边缘。盖可包括钼基底、包括诸如钛、钽或铬的材料的物理气相沉积的粘合层、铜籽晶层和/或钯焊料基层。
本发明的还有其它方面提供用于密封气密封装的金属非磁性盖，该盖包括钼基底、物理气相沉积的粘合层、铜籽晶层、钯焊料基层和附接在盖的密封表面处的金/锡焊料预型件。
应理解的是，以上的描述意图为说明性且非限制性的。例如，上述实施例(和/或其方面)可以与彼此结合地使用。此外，可作出许多修改以使具体的情形或材料适应本发明的教导而不脱离其范畴。虽然在本文中描述的材料的尺寸和类型意图限定本发明的参数，但是它们决非限制性的并且为示例性实施例。在阅读上面的描述之后，许多其它实施例对本领域技术人员将是显而易见的。本发明的范围因此应当参照所附权利要求连同这种权利要求授权的等同物的全部范围一起来确定。在所附权利要求中，用语“包括”和“在其中”用作相应用语“包含”和“其中”的通俗易懂的等同物。而且，在下列权利要求中，诸如“第一”、“第二”、“第三”、“上”、“下”、“底部”、“顶部”等的用语仅仅用作标记，并且不意图对它们的对象强加数字或位置要求。此外，下列权利要求的限制不书写成装置加功能格式，并且不意图基于35 U.S.C.§112第六段解释，除非且直至这种权利要求限制清楚地使用短语“用于……的装置”，之后跟随没有进一步的结构的功能陈述。
该书面描述使用示例来公开本发明，包括最佳模式，并且还使本领域技术人员能够实践本发明，包括制作和使用任何装置或系统以及执行任何包含的方法。本发明可申请专利的范围由权利要求限定，并且可包括本领域普通技术人员想到的其它示例。如果这些其它示例具有不与权利要求的字面语言不同的结构元件，或者如果它们包括与权利要求的字面语言无实质差异的等同结构元件，则意在使这些其它示例处于权利要求的范围内。
如本文中使用的，以单数叙述且前缀词语“一”或“一个”的元件或步骤应当理解为不排除多个元件或步骤，除非明确地陈述这种排除。此外，对本发明的“一个实施例”的引用不意图解释为排除也包含所述特征的额外实施例的存在。而且，除非相反明确地陈述，否则“包含”、“包括”或“具有”带特定特性的一个元件或多个元件的实施例可包括没有该特性的额外的此类元件。
因为在产生盖的上述物品和方法中可作出某些改变，而不脱离本文中涉及的发明的精神和范围，故意图使上面的描述或附图中显示的所有主题应当仅被解释为本文中说明的发明构思的示例，并且不应被认为是限制本发明。

Claims (24)

1.一种用于密封气密封装的金属非磁性盖，包括：
钼基底；
溅射的粘合层；
铜籽晶层；
钯焊料基层；和
附接在所述盖的密封表面处的金/锡焊料预型件。
2.根据权利要求1所述的非磁性盖，其特征在于，所述粘合层包括钛。
3.根据权利要求2所述的非磁性盖，其特征在于，所述基底在溅射所述粘合层之前接受化学蚀刻、机械蚀刻或反向溅射中的至少一者。
4.根据权利要求1所述的非磁性盖，其特征在于，所述焊料基层镀敷在1000埃到2μm厚之间。
5.根据权利要求1所述的非磁性盖，其特征在于，所述焊料基层为至少1微米厚。
6.根据权利要求5所述的非磁性盖，其特征在于，所述焊料基层为不大于6微米厚。
7.根据权利要求1所述的非磁性盖，其特征在于，所述非磁性盖在所述焊料基层上还包括到1000埃至2μm厚的电镀金涂层。
8.根据权利要求1所述的非磁性盖，其特征在于，在附接所述金/锡预型件之前，涂覆了钯的盖被真空烘烤。
9.根据权利要求8所述的非磁性盖，其特征在于，所述盖被真空烘烤以在所述钯焊料基层中实现小于6ppm的H浓度。
10.根据权利要求1所述的非磁性盖，其特征在于，所述非磁性盖在其外边缘处具有为30密耳的角部半径。
11.根据权利要求1所述的非磁性盖，其特征在于，所述粘合层为至少500埃厚。
12.根据权利要求1所述的非磁性盖，其特征在于，所述粘合层为2000埃厚。
13.根据权利要求1所述的非磁性盖，其特征在于，所述籽晶层为至少1000埃厚。
14.根据权利要求1所述的非磁性盖，其特征在于，所述籽晶层为2000埃厚。
15.根据权利要求1所述的非磁性盖，其特征在于，所述籽晶层为不大于6000埃厚。
16.根据权利要求1所述的非磁性盖，其特征在于，所述粘合层包括从由钛、钽或铬构成的组中选择的一种或更多种材料。
17.根据权利要求1所述的非磁性盖，其特征在于，所述粘合层、所述籽晶层和所述焊料基层至少覆盖所述基底的密封表面和限界所述密封表面的所述基底的边缘。
18.根据权利要求17所述的非磁性盖，其特征在于，所述粘合层、所述籽晶层和所述焊料基层一致地覆盖所述基底。
19.一种用于产生用于密封非磁性气密封装的盖的方法，所述方法包括：
由钼坯料形成盖形基底；
将包括从由钛、钽或铬构成的组中选择的一种或更多种材料的粘合层溅射到所述基底上；
将铜籽晶层溅射到所述粘合层上；
将钯焊料基层电镀到所述籽晶层上；和
在所述盖的密封表面处附接金/锡焊料预型件。
20.根据权利要求19所述的方法，其特征在于，所述方法还包括在溅射所述粘合层之前将所述基底进行反向溅射、化学蚀刻或机械蚀刻中的至少一者。
21.根据权利要求19所述的方法，其特征在于，所述方法还包括在附接所述金/锡焊料预型件之前真空烘烤所述盖。
22.根据权利要求19所述的方法，其特征在于，所述粘合层基本上由钛构成。
23.一种用于产生非磁性气密封装的方法，包括：
将敏感构件结合在由非磁性壁限定的内部腔内，所述非磁性壁具有由非磁性金属密封环限定的密封边缘；和
将根据权利要求1-18中任一项所述的非磁性盖密封至所述密封边缘，
其中，所述非磁性盖具有包括金/锡焊料预型件的密封表面，所述金/锡焊料预型件被密封至所述密封边缘。
24.一种用于密封气密封装的金属非磁性盖，包括：
钼基底；
物理气相沉积的粘合层；
铜籽晶层；
钯焊料基层；和
附接在所述盖的密封表面处的金/锡焊料预型件。
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