CN110551983A - 钼圆pvd磁控溅射镀膜方法 - Google Patents

钼圆pvd磁控溅射镀膜方法 Download PDF

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Publication number
CN110551983A
CN110551983A CN201910724611.3A CN201910724611A CN110551983A CN 110551983 A CN110551983 A CN 110551983A CN 201910724611 A CN201910724611 A CN 201910724611A CN 110551983 A CN110551983 A CN 110551983A
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Prior art keywords
molybdenum
magnetron sputtering
coating
film
circle
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CN201910724611.3A
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Inventor
高敏杰
詹晓北
吴剑荣
李志涛
俞叶
赵占平
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YIXING KEXING ALLOY MATERIAL CO Ltd
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YIXING KEXING ALLOY MATERIAL CO Ltd
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Priority to CN201910724611.3A priority Critical patent/CN110551983A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明属于钼圆片生产技术领域，具体涉及钼圆PVD磁控溅射镀膜方法，包括以下步骤：（1）钼圆在镀膜前被加热到100℃～150℃；（2）用高频等离子轰击钼圆片表面，对钼圆表面所吸附的杂质做进一步清除；（3）再开始用磁控溅射的方法在钼圆表面镀膜。本发明提供的钼圆PVD磁控溅射镀膜方法，既能保证镀制薄膜层的致密性，减少膜的厚度，并且达到较小的薄膜应力，不易开裂。

Description

钼圆PVD磁控溅射镀膜方法
技术领域
本发明属于钼圆片生产技术领域，具体涉及钼圆PVD磁控溅射镀膜方法。
背景技术
PVD磁控溅射镀膜技术已经成为现代电子工艺学中的基础工艺，其优点是工艺稳定，重复性好，有着较高的成膜均匀性，而且环保无污染。因此工艺在真空环境下成膜，膜层不易被污染，可形成纯净致密的膜层，在电子产品、集成电路以及芯片制造中被广泛运用。
本研究PVD磁控溅射镀膜工艺的难点不在于对成膜靶材方面的研究，而在于PVD磁控真空镀制的膜层能承受大电流及高温热应变的冲击，在钼圆不断热胀冷缩过程中镀膜层不脱落、不开裂。同时在使用过程中镀膜层不但自身不变性，同时还要保护钼圆不被氧化，从而保证当强大的电流通过时钼圆两面对压降不增加，而这在以往的电子器件运用上有着很大的不同。而且钼圆片的内部晶粒尺寸要远远大于硅片、陶瓷片及玻璃等基底材料，决定了钼圆的表面粗糙度很高，因此为了确保镀制度薄膜在钼圆表面形成连续致密的膜层，防止出现坑洞、麻点等质量缺陷，必须大幅度增加镀膜层的厚度，然而镀膜层越厚薄膜应力越大，在恶劣的使用环境下就越容易开裂。这又是此工艺技术的难点。
发明内容
针对上述技术问题，本发明提供一种钼圆PVD磁控溅射镀膜方法，保证镀制薄膜层的致密性与较小的薄膜应力。
钼圆PVD磁控溅射镀膜方法，包括以下步骤：
（1）钼圆在镀膜前被加热到100℃～150℃；
（2）用高频等离子轰击钼圆片表面，对钼圆表面所吸附的杂质做进一步清除；
（3）再开始用磁控溅射的方法在钼圆表面镀膜。
进一步的，磁控溅射过程中，PVD磁控溅射条件为：0.5～2Pa的工作真空度， 0.1～0.25Pad工作真空度，并且在溅射镀膜的同时，增加镀膜材料原子到钼圆表面动能的电场。
本发明提供的钼圆PVD磁控溅射镀膜方法，既能保证镀制薄膜层的致密性，减少膜的厚度，并且达到较小的薄膜应力，不易开裂。
具体实施方式
结合实施例说明本发明的具体技术方案。
本实施例选择了额定溅射功率的30%负载进行PVD溅镀，并且在往复镀膜过程中，一边镀膜，一边用高温等离子轰击。
为了保证薄膜的附着力，即镀膜层和钼圆表面产生合金，钼圆在镀膜前被加热到100℃～150℃的条件下，对钼圆用高频等离子轰击钼圆片表面，对钼圆表面所吸附的杂质做进一步清除，再开始用磁控溅射的方法在钼圆表面镀膜。为了保证镀膜靶材原子具有跟高的动能进入钼圆表面以下深层与钼圆子产生合金，采用低于一般PVD磁控溅射的0.5～2Pa的工作真空度，选择了0.1～0.25Pad工作真空度，并且在溅射镀膜的同时，引入了增加镀膜材料原子到钼圆表面动能的电场，大大提高了镀膜层的附着力。

Claims (2)

1.钼圆PVD磁控溅射镀膜方法，其特征在于，包括以下步骤：
（1）钼圆在镀膜前被加热到100℃～150℃；
（2）用高频等离子轰击钼圆片表面，对钼圆表面所吸附的杂质做进一步清除；
（3）再开始用磁控溅射的方法在钼圆表面镀膜。
2.根据权利要求1所述的钼圆PVD磁控溅射镀膜方法，其特征在于，磁控溅射过程中，PVD磁控溅射条件为：0.5～2Pa的工作真空度， 0.1～0.25Pad工作真空度，并且在溅射镀膜的同时，增加镀膜材料原子到钼圆表面动能的电场。
CN201910724611.3A 2019-08-07 2019-08-07 钼圆pvd磁控溅射镀膜方法 Pending CN110551983A (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103205724A (zh) * 2013-04-23 2013-07-17 南开大学 一种二硫化钼薄膜材料的制备方法
CN104602438A (zh) * 2014-12-29 2015-05-06 中国原子能科学研究院 一种吸氚靶片制备方法
US20160122183A1 (en) * 2014-10-31 2016-05-05 General Electric Company Lid and method for sealing a non-magnetic package
CN106744673A (zh) * 2016-12-23 2017-05-31 天津理工大学 一种横向生长非晶硅纳米线的制备方法
CN107304471A (zh) * 2016-04-22 2017-10-31 江苏科技大学 一种在钼基片上沉积的钌薄膜及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103205724A (zh) * 2013-04-23 2013-07-17 南开大学 一种二硫化钼薄膜材料的制备方法
US20160122183A1 (en) * 2014-10-31 2016-05-05 General Electric Company Lid and method for sealing a non-magnetic package
CN104602438A (zh) * 2014-12-29 2015-05-06 中国原子能科学研究院 一种吸氚靶片制备方法
CN107304471A (zh) * 2016-04-22 2017-10-31 江苏科技大学 一种在钼基片上沉积的钌薄膜及其制备方法
CN106744673A (zh) * 2016-12-23 2017-05-31 天津理工大学 一种横向生长非晶硅纳米线的制备方法

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