CN107078024A - 通过防潮层实现的基于聚合物的电容器的可靠性改进 - Google Patents

通过防潮层实现的基于聚合物的电容器的可靠性改进 Download PDF

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CN107078024A
CN107078024A CN201580060230.XA CN201580060230A CN107078024A CN 107078024 A CN107078024 A CN 107078024A CN 201580060230 A CN201580060230 A CN 201580060230A CN 107078024 A CN107078024 A CN 107078024A
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microelectronic component
damp
layer
capacitor
proof layer
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CN107078024B (zh
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H·郭
T·A·泰勒
J·A·韦斯特
R·A·杰克逊
B·威廉姆斯
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Texas Instruments Inc
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Texas Instruments Inc
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Abstract

在所描述的示例中，通过防潮层(320)有效地减少来自环境中的水蒸气的水分子渗透，防潮层(320)包括通过原子层沉积(ALD)过程形成的氧化铝层。微电子器件(300)包括在电容器电介质(310)中具有有机聚合物材料(314)的电容器(306)，以及具有通过ALD过程形成的氧化铝层的防潮层(320)。

Description

通过防潮层实现的基于聚合物的电容器的可靠性改进
技术领域
本发明整体涉及微电子器件，并且更具体地，涉及微电子器件中的具有聚合物电介质层的电容器。
背景技术
微电子器件中的一些电容器在电容器电介质中包括有机聚合物材料。在一些情况下，有机聚合物材料提供基本上完整的电容器电介质。在其他情况下，有机聚合物材料可与无机电介质材料(诸如二氧化硅)组合以提供电容器电介质。有机聚合物材料通常提供优于二氧化硅的电压浪涌性能。具有在电容器电介质中包括有机聚合物材料的电容器的微电子器件制造起来通常比具有无机电介质材料的类似器件便宜。不幸的是，电容器电介质中的有机聚合物材料经受可靠性问题，包括随时间降低的击穿电压，所述击穿电压通常通过时间相关的电介质击穿(TDDB)测试来估计。在电容器的TDDB测试中，将恒定的应力电压(stress voltage)施加到电容器，直到通过电容器的泄漏电流超出指定极限，其被限定为电容器电介质的击穿。施加应力电压直到击穿所经的时间长度提供对电容器在规定的工作电压下在限定的工作环境中的可靠性的估计。
发明内容
在所描述的示例中，通过防潮层(moisture barrier)有效地减少来自环境中的水蒸气的水分子渗透，所述防潮层包括通过原子层沉积(ALD)过程形成的氧化铝层。微电子器件包括在电容器电介质中具有有机聚合物材料的电容器，以及具有通过ALD过程形成的氧化铝层的防潮层。
附图说明
图1是示出第一多个至第六多个微电子器件的TDDB测试结果的威布尔图，所述微电子器件包括在电容器电介质中具有聚酰亚胺的电容器。
图2是示出第七多个至第十四多个微电子器件的TDDB测试结果的威布尔图，所述微电子器件包括在电容器电介质中具有聚苯并恶唑(PBO)的电容器。
图3是一个示例微电子器件的横截面，所述微电子器件包括在电容器的电容器电介质中具有有机聚合物材料的电容器。
图4A至图4E是以一种形成微电子器件的示例方法的顺序阶段描绘的图3的微电子器件的横截面。
图5A至图5C是以一种示例形成方法的顺序阶段描绘的另一示例微电子器件的横截面。
图6A至图6D是以一种示例形成方法的顺序阶段描绘的另一示例微电子器件的横截面。
图7是另一示例微电子器件的横截面。
具体实施方式
附图未必按比例绘制。一些动作可以以不同的次序发生和/或与其他动作或事件同时发生。此外，并非需要所有所说明的动作或事件来实施根据示例实施例的方法。
通过了解在电容器电介质中具有有机聚合物材料的微电子器件电容器的不良的TDDB可靠性的根源，可显著改进TDDB可靠性。当微电子器件在工作环境中暴露于水蒸气时，水分子渗透有机聚合物材料。有机聚合物材料中的水分子导致不良的TDDB可靠性，而减少到有机聚合物材料中的水分子渗透相应地改进TDDB可靠性。通过防潮层有效地减少来自环境中的水蒸气的水分子渗透，所述防潮层包括通过原子层沉积(ALD)过程形成的氧化铝层。
图1是示出第一多个至第六多个微电子器件的TDDB测试结果的威布尔图，所述微电子器件包括在电容器电介质中具有聚酰亚胺的电容器。参考图1描述的微电子器件不包括ALD氧化铝防潮层。第一多个至第六多个微电子器件的TDDB测试在25℃以5,000伏应力电压执行。
第一多个微电子器件在形成后立即经受TDDB测试。第一多个微电子器件中的电容器显示出～6×103秒的中间TDDB值。对应于第一多个微电子器件的TDDB值通过图1中的“如所接收”来指示。
第二多个微电子器件在形成后暴露于室内环境下储存4周，并且随后经受TDDB测试。第二多个微电子器件中的电容器显示出～9×102秒的中间TDDB值。对应于第二多个微电子器件的TDDB值通过图1中的“放置4周”指示。第二多个微电子器件的TDDB值相对于第一多个微电子器件的TDDB值指示电容器电介质中的聚酰亚胺在暴露于室内环境期间的显著恶化。
第三多个微电子器件在形成之后被烘干以从电容器电介质中的聚酰亚胺中去除水分子，并在烘干后立即经受TDDB测试。第三多个微电子器件中的电容器显示出～2×105秒的中间TDDB值。对应于第三多个微电子器件的TDDB值通过图1的“后烘干”指示。第三多个微电子器件的TDDB值相对于第一多个微电子器件的TDDB值指示电容器电介质中的聚酰亚胺在烘干以从电容器电介质中的聚酰亚胺中去除水分子之后的显著改进。
第四多个微电子器件在形成后被烘干以将水分子从电容器电介质中的聚酰亚胺中去除，随后暴露于室内环境下储存1周，并且随后经受TDDB测试。第四多个微电子器件中的电容器显示出～9×102秒的中间TDDB值。对应于第四多个微电子器件的TDDB值通过图1的“后烘干-放置1周”指示。第四多个微电子器件的TDDB值相对于第二多个微电子器件的TDDB值以及相对于第三多个微电子器件的TDDB值指示通过从电容器电介质中的聚酰亚胺去除水分子而获得的改进可通过随后暴露于室内环境下而逆转。
第五多个微电子器件在形成后被烘干以从电容器电介质中的聚酰亚胺去除水分子，随后在提供具有基本上100％相对湿度的环境的水箱中储存1周，并且随后经受TDDB测试。第五多个微电子器件中的电容器显示出～1.5×103秒的中间TDDB值。对应于第五多个微电子器件的TDDB值通过图1的“后烘干-1周水箱”指示。第五多个微电子器件的TDDB值相对于第二多个微电子器件的TDDB值以及相对于第三多个微电子器件的TDDB值指示通过从电容器电介质中的聚酰亚胺去除水分子而获得的改进可通过随后暴露于100％湿度下而逆转。第五多个微电子器件的TDDB值相对于第四多个微电子器件的TDDB值指示TDDB值的降级是由于水分子渗透到电容器电介质中的聚酰亚胺。
第六多个微电子器件在形成后在提供具有基本上100％相对湿度的环境的水箱中储存2周，随后被烘干以从电容器电介质中的聚酰亚胺去除水分子，并且随后经受TDDB测试。第六多个微电子器件中的电容器显示出～3.5×105秒的中间TDDB值。对应于第六多个微电子器件的TDDB值通过图1的“2周水箱-后烘干”指示。第六多个微电子器件的TDDB值相对于第五多个微电子器件的TDDB值指示水分子到电容器电介质中的聚酰亚胺中的渗透是可逆的。
第一多个至第六多个微电子器件的TDDB结果指示TDDB可靠性降级的主要因素是在暴露于环境水蒸气下后水分子渗透到电容器电介质中的聚酰亚胺中。此外，TDDB结果指示在聚酰亚胺中的水可去除并保持在电容器电介质外的情况下，TDDB可靠性可维持在期望的高值处。
图2是示出第七多个至第十四多个微电子器件的TDDB测试结果的威布尔图，所述微电子器件包括在电容器电介质中具有PBO的电容器。参考图2描述的微电子器件不包括ALD氧化铝防潮层。第七多个至第十四多个微电子器件的TDDB测试在25℃以1,000伏应力电压执行。
第七多个微电子器件在形成后立即经受TDDB测试。第七多个微电子器件中的电容器显示出～7×103秒的中间TDDB值。对应于第七多个微电子器件的TDDB值通过图2中的“如所接收”指示。
第八多个微电子器件在形成后暴露于室内环境下储存2周，并且随后经受TDDB测试。第八多个微电子器件中的电容器显示出～4×103秒的中间TDDB值。对应于第八多个微电子器件的TDDB值通过图2中的“放置2周”指示。第八多个微电子器件的TDDB值相对于第七多个微电子器件的TDDB值指示电容器电介质中的PBO在暴露于室内环境下期间的显著恶化。
第九多个微电子器件在形成后暴露于室内环境下储存2个月，并且随后经受TDDB测试。第九多个微电子器件中的电容器显示出～1.1×103秒的中间TDDB值。对应于第九多个微电子器件的TDDB值通过图2的“放置2个月”指示。第九多个微电子器件的TDDB值相对于第七多个微电子器件的TDDB值以及相对于第八多个微电子器件的TDDB值指示电容器电介质中的PBO的恶化随着越来越长时间地暴露于室内环境下而增加。
第十多个微电子器件在形成后暴露于室内环境下储存4个月，并且随后经受TDDB测试。第十多个微电子器件中的电容器显示出～8×101秒的中间TDDB值。对应于第十多个微电子器件的TDDB值通过图2的“放置4个月”指示。第十多个微电子器件的TDDB值相对于第七多个微电子器件的TDDB值、相对于第八多个微电子器件的TDDB值以及相对于第九多个微电子器件的TDDB值进一步指示电容器电介质中的PBO的恶化随着越来越长时间地暴露于室内环境下而增加。
第十一多个微电子器件在提供具有基本上100％相对湿度的环境的水箱中储存1周，并且随后经受TDDB测试。第十一多个微电子器件中的电容器显示出～8×102秒的中间TDDB值。对应于第十一多个微电子器件的TDDB值通过图2中的“1周水箱”指示。第十一多个微电子器件的TDDB值相对于第七多个微电子器件的TDDB值指示电容器电介质中的PBO在暴露于100％湿度下期间的显著恶化。
第十二多个微电子器件在提供具有基本上100％相对湿度的环境的水箱中储存2周，并且随后经受TDDB测试。第十二多个微电子器件中的电容器显示出～1.3×102秒的中间TDDB值。对应于第十二多个微电子器件的TDDB值通过图2中的“2周水箱”指示。第十二多个微电子器件的TDDB值相对于第七多个微电子器件的TDDB值以及相对于第十一多个微电子器件的TDDB值指示电容器电介质中的PBO的恶化随着越来越长时间地暴露于100％湿度下而增加。
第十三多个微电子器件在提供具有基本上100％相对湿度的环境的水箱中储存4周，并且随后经受TDDB测试。第十三多个微电子器件中的电容器显示出～1.6×101秒的中间TDDB值。对应于第十三多个微电子器件的TDDB值通过图2中的“4周水箱”指示。第十三多个微电子器件的TDDB值相对于第七多个微电子器件的TDDB值、相对于第十一多个微电子器件的TDDB值以及相对于第十二多个微电子器件的TDDB值进一步指示电容器电介质中的PBO的恶化随着越来越长时间地暴露于100％湿度下而增加。
第十四多个微电子器件在形成之后被烘干以从电容器电介质中的PBO去除水分子，并在被烘干后立即经受TDDB测试。第十四多个微电子器件中的电容器显示出～1×105秒的中间TDDB值。对应于第十四多个微电子器件的TDDB值通过图1中的“后烘干”指示。第十四多个微电子器件的TDDB值相对于第七多个微电子器件的TDDB值指示电容器电介质中的PBO在烘干以从电容器电介质中的PBO去除水分子之后的显著改进。
第七多个至第十四多个微电子器件的TDDB结果指示TDDB可靠性降级的主要因素是在暴露于环境水蒸气后水分子渗透到电容器电介质中的PBO中。此外，TDDB结果指示在PBO中的水可去除并保持在电容器电介质外的情况下，TDDB可靠性可维持在期望的高值处。
图3是一个示例微电子器件的横截面，所述微电子器件包括在电容器的电容器电介质中具有有机聚合物材料的电容器。微电子器件300包括无机衬底302，无机衬底302可包括半导体材料诸如硅，或者可包括绝缘材料诸如玻璃或陶瓷。微电子器件300包括设置在衬底302上方的电容器306的第一板304。第一板304可包括一个或更多个金属层诸如铝或铜层，其具有适合的粘合金属层、内衬金属和/或盖金属层。第一板304可通过可选的隔离电介质层308与衬底302电隔离，隔离电介质层308设置在衬底302与第一板304之间。
电容器306包括设置在第一板304上方的电容器电介质310。在该示例中，电容器电介质310可包括可选的无机电介质材料312，诸如一个或更多个二氧化硅、氮化硅、氮氧化硅和/或氮碳氧化硅层。电容器电介质310可包括微电子器件300的互连区的电介质层。电容器电介质310包括有机聚合物材料314，诸如聚酰亚胺或PBO。在该示例中，有机聚合物材料314被图案化以免延伸到无机电介质材料312(如果存在)的边缘或衬底302。在电容器电介质310中具有无机电介质材料312和有机聚合物材料314可期望地提供静态和瞬态应力可靠性两者。无机电介质材料312提供比有机聚合物材料314大的静态应力可靠性，并且有机聚合物材料314提供比无机电介质材料312大的瞬态应力可靠性。
电容器306包括与第一板304相对设置的第二板316，第二板316在该示例中设置在电容器电介质310上方。第二板316可包括一个或更多个金属层诸如铝或铜层，并且可进一步包括粘合金属层、内衬金属和/或盖金属层。
在该示例中，微电子器件300可包括设置在第二板316上的焊盘318。焊盘318可包括一个或更多个镍、钯、铂和/或金层。
微电子器件300包括设置在有机聚合物材料314上方的防潮层320，以便覆盖通过无机电介质材料312、隔离电介质层308、衬底302和/或第二板316暴露的有机聚合物材料314的表面。防潮层可叠盖有机聚合物材料314并延伸到无机电介质材料312(如果存在)和/或衬底302上。防潮层320可直接设置在有机聚合物材料314上，或者电介质材料层可存在于防潮层320与有机聚合物材料314之间，诸如粘合层或平面化层(planarizing layer)。防潮层320包括通过ALD过程形成的至少一个氧化铝层，其在本文中称为ALD氧化铝层。例如，每个ALD氧化铝层可为20纳米至200纳米厚。防潮层320可包括ALD氧化铝和另一电介质材料的多个交替层。例如，与ALD氧化铝交替的电介质材料可为无机电介质材料(诸如通过ALD过程形成的二氧化硅)、通过分子沉积过程形成的有机聚合物，或通过ALD过程形成的混合的有机-无机聚合物，如通过乔治(George)等人在第US 2010/0178481号专利申请公开案中所描述，并且所述专利申请公开案通过引用并入本文。与通过其他方法诸如反应溅射法形成的氧化铝层相比，通过ALD形成的氧化铝层的区别在于其具有非晶态显微结构、高保形性以及均匀的厚度。
在该示例中，微电子器件300可包括设置在防潮层320上的可选保护层322。保护层322可包括一个或更多个基于二氧化硅的材料层或聚合物材料层。保护层322可为防潮层提供保护以使其在微电子器件300的形成和组装期间免受机械损害和液态水的影响。液态水可在封装之前的微电子器件300的分离(singulation)期间存在。与防潮层320接触的液态水已被证实使ALD氧化铝恶化。
在该示例中，在分离后，微电子器件300使用管芯附接粘合剂326或可能的焊料安装在载体324上。引线328附接到载体324以为微电子器件300提供外部连接。形成引线键合(wire bond)330以将焊盘318电连接到引线328中的一个。
例如，微电子器件300可为具有有源组件诸如晶体管的集成电路，或者可为包括电容器、电阻器和/或电感器的无源器件。在该示例中，微电子器件300包封在塑料树脂332中以作为封装过程的一部分。例如，塑料树脂可为环氧树脂。其他封装件配置诸如气密密封的陶瓷封装件在该示例的范围内。
形成防潮层320以便结合第二板316、无机电介质材料312、隔离电介质层308和/或衬底302来密封有机聚合物材料314可显著减少水分子到有机聚合物材料314中的渗透，并且因此与没有防潮层的类似微电子器件相比有利地提供显著改进的TDDB可靠性。形成防潮层320以便被封装件(在该示例中为塑料树脂332)包含可有利地在微电子器件300的使用期间为防潮层提供机械保护。
图4A至图4E是以一种形成微电子器件的示例方法的顺序阶段描绘的图3的微电子器件的横截面。参考图4A，衬底302可为具有通过分离区336诸如划线横向分隔开的微电子器件300和类似的微电子器件334的多个实例的硅晶片或大面积陶瓷衬底的一部分。
可选的隔离电介质层308可形成于衬底302上方，并且可延伸通过分离区336，如图4A中所描绘。隔离电介质层308可包括一个或更多个基于二氧化硅的电介质材料层和/或氮化硅层，所述一个或更多个层例如通过硅的热氧化、等离子体增强化学气相沉积(PECVD)过程、低压化学气相沉积(LPCVD)过程或其他电介质沉积过程形成。隔离电介质层308可包括微电子器件300的互连区的较低电介质层诸如金属沉积前电介质(PMD)层，以及金属内电介质(IMD)层和层间电介质(ILD)层。
第一板304形成于衬底302上方，并且在隔离电介质层308(如果存在)上方。第一板304可与类似的微电子器件334的实例中的第一板338同时形成。第一板304可与微电子器件300的金属化层的金属互连件同时形成。替代性地，第一板304可与微电子器件300的其他元件分开形成。在该示例的一个版本中，第一板304可通过蚀刻由光刻胶图案掩蔽的铝层而形成。在另一版本中，第一板304可通过铜镶嵌(damascene)过程形成。在另外的版本中，第一板304可通过经由电镀掩模在籽晶层上电镀铜来形成。形成第一板的其他方法在该示例的范围内。
电容器电介质310的可选的无机电介质材料312可形成于第一板304上方。无机电介质材料312可形成为一个或更多个电介质材料诸如基于二氧化硅的电介质材料层(例如，通过PECVD过程形成)。无机电介质材料312可包括微电子器件300的互连区的电介质层。
有机聚合物材料314在第一板304上方形成于无机电介质材料312(如果存在)上。有机聚合物材料314可与类似的微电子器件334的实例中的有机聚合物材料340同时形成。例如，有机聚合物材料314可包括聚酰亚胺或PBO。有机聚合物材料314可通过以下操作形成：旋涂(spin coating)聚合物的光敏制剂，通过烘干去除挥发性材料，随后通过光刻过程暴露聚合物，之后是通过显影工艺去除不想要的聚合物材料。最终的热固化可为有机聚合物材料314提供期望的化学特性。替代性地，有机聚合物材料314可通过以下操作形成：旋涂聚合物的非光敏制剂，通过烘干去除挥发性材料，在聚合物上方形成光刻胶掩模，通过蚀刻过程去除不想要的聚合物，并去除掩模，之后可能是可选的热固化。在该示例中，有机聚合物材料314被图案化以终止在无机电介质材料312(如果存在)上，或者可能地终止在隔离电介质层308或衬底302上，以为图1的随后形成的防潮层320提供良好密封。
第二板316形成于有机聚合物材料314上方，与第一板304相对。第二板316可与类似的微电子器件334的实例中的第二板342同时形成。第二板316可包括一个或更多个金属层诸如铝或铜层，可能具有粘合金属层和/或盖金属层。第二板316可通过以下操作形成：沉积金属层，在金属层上方形成蚀刻掩模，蚀刻通过蚀刻掩模暴露的金属层以形成第二板316，并去除掩模。替代性地，第二板316可通过以下操作形成：沉积籽晶金属层，在籽晶金属层上形成电镀掩模，在通过电镀掩模暴露的籽晶金属层上进行电镀以形成第二板316，随后去除电镀掩模和通过第二板316暴露的籽晶金属层。
焊盘318形成于第二板316上方，并电连接到第二板316。焊盘318可包括一个或更多个金属层，诸如铝、铜、镍、钯、铂和/或金层。焊盘318可通过各种方法中的任何方法形成。焊盘318可通过以下操作形成：在第二板316上方溅射或蒸镀金属层，在金属层上方形成蚀刻掩模并去除通过蚀刻掩模暴露的金属层以留下焊盘318，并且随后去除蚀刻掩模。焊盘318可通过在第二板316上电镀或化学镀金属层来形成。
在形成第二板316之后，并且可能在形成焊盘318之后，微电子器件300可以可选地烘干以从有机聚合物材料314去除水分子。微电子器件300可使用红外热源344来烘干，如图4A中示意性地描绘。替代性地，微电子器件300可使用批量式烘箱或热板来烘干。微电子器件300在被烘干时可设置在真空或干燥环境中以促进水分子的去除。烘干过程的热分布可根据有机聚合物材料314的厚度来选择。从有机聚合物材料314去除水分子的其他方法诸如长期暴露在真空下在该示例的范围内。
参考图4B，防潮层320形成于有机聚合物材料314上方。防潮层320可在有机聚合物材料314脱去水分子至期望水平时形成，诸如在参考图4A所描述的烘干过程之后立即形成。防潮层320包括通过ALD过程形成的至少一个氧化铝层。氧化铝的ALD过程可包括形成铝前体层诸如三甲基铝层，随后将铝前体层暴露于氧化剂诸如水。用于形成一个或更多个氧化铝层的其他ALD过程在该示例的范围内。防潮层320可包括在氧化铝层与有机聚合物材料314之间的粘合层。防潮层320可包括盖层。防潮层320可通过顺序ALD过程形成以形成多个交替的ALD氧化铝层和二氧化硅层，如在先前所叙述的第US2010/0178481号专利申请公开案中所描述。防潮层320可通过顺序ALD过程和分子层沉积过程形成以形成ALD氧化铝和有机聚合物的多个交替层，还如在第US 2010/0178481号美国专利申请公开案中所描述。防潮层320可通过顺序ALD过程形成以形成ALD氧化铝和混合有机-无机聚合物的多个交替层，这在第US 2010/0178481号美国专利申请公开案中进一步有所描述。在形成ALD氧化铝和二氧化硅的多个交替层时，有机聚合物或混合有机-无机聚合物已被证实在温度应力循环测试(诸如反复循环至380℃以模拟波峰焊接(wave soldering))期间为防潮层320提供耐久性。已经示出形成ALD氧化铝和另一电介质材料层的多个交替层在有机聚合物材料314的表面上提供改进的水分子渗透抵抗，所述表面已通过多个灰化过程诸如预处理灰化过程变粗糙。
参考图4C，可选的保护层322可形成于防潮层320上方。保护层322可通过一个或更多个保形薄膜过程诸如PECVD、气相传输(vapor transport)和/或ALD形成。PECVD过程可提供基于二氧化硅的电介质材料层。气相传输过程可提供聚对二甲苯层。ALD过程可提供二氧化硅或其他保护材料层。
参考图4D，焊盘掩模346形成于微电子器件300的顶部表面上方，所述顶部表面暴露焊盘318的一部分。焊盘掩模346可包括通过光刻过程形成的光刻胶。保护层322和防潮层320诸如通过反应离子蚀刻(RIE)过程从焊盘318上方去除。RIE过程可包括利用不同化学物质的若干连续蚀刻步骤，以去除保护层322和防潮层320中的不同成分的若干层。焊盘掩模346随后诸如通过灰化过程去除。顶部的金接合层可通过在由防潮层320暴露的焊盘318上进行化学镀来形成。
参考图4E，微电子器件300被分离，诸如通过穿过图4D的分离区336划片(scribing)或切片(sawing)来分离。防潮层320覆盖有机聚合物材料314的边缘，并延伸到接近于微电子器件300的边缘的无机电介质材料312和/或衬底302上。保护层322可有利地防止液态水在分离过程期间接触防潮层320，所述分离过程通常使用水来冷却。在分离后，微电子器件300可被封装和组装，诸如以提供图3的结构。
图5A至图5C是以一种示例形成方法的顺序阶段描绘的另一示例微电子器件的横截面。参考图5A，可为大面积陶瓷衬底或其他绝缘材料的一部分的衬底502具有用于通过分离区536诸如划片线横向分隔开的微电子器件500和类似的微电子器件534的多个实例的区域。在该示例中，电容器506的第一板504可形成于衬底502上，如图5A中所描绘。替代性地，衬底502可为半导体晶片，并且图5A中未示出的隔离电介质层可形成于衬底502上以电隔离第一板504与衬底，诸如参考图4A针对可选的隔离电介质层308所描述。第一板504可与类似的微电子器件534的实例中的第一板538同时形成。
在该示例中，有机聚合物材料514形成于第一板504上方以提供电容器506的电容器电介质510。有机聚合物材料514可包括聚酰亚胺或PBO，并且可如参考图4A所描述的那样形成。与更加复杂的电容器电介质相比，基本上由有机聚合物材料514形成电容器电介质510可有利地减少微电子器件500的制造成本。替代性地，电容器电介质510可包括无机电介质材料(未在图5A中示出)，诸如参考图4A针对可选的无机电介质材料312所描述。在该示例中，有机聚合物材料514被图案化以终止于衬底502上，从而为随后形成的防潮层提供良好的密封。有机聚合物材料514可与类似的微电子器件534的实例中的有机聚合物材料540同时形成。
第二板516形成于电容器电介质510上方，与第一板504相对。第二板516可与类似的微电子器件534的实例中的第二板542同时形成。第二板516可如参考图4A所描述的那样形成。可选的焊盘518可形成于第二板516上方并电连接到第二板516，诸如参考图4A所描述。
在该示例的替代性版本中，第一板504和第二板516可具有更加复杂的配置，诸如在同一金属化层中的交错叉齿(tine)，或跨越多个金属化层的交错板，其中有机聚合物材料514为金属化层提供电介质隔离。在电容器电介质510中使用有机聚合物材料514的其他电容器配置在该示例的范围内。
在该示例中，外涂层548可形成于电容器506上方，延伸到衬底502上，并且终止于衬底502上。例如，外涂层548可包括一个或更多个聚酰亚胺、PBO、二氧化硅、氮化硅和/或氮氧化硅层。在该示例中，外涂层548延伸到焊盘518上，并暴露焊盘518的中心部分。外涂层548可使用光敏聚酰亚胺或光敏PBO通过光刻过程直接形成。替代性地，外涂层548可通过以下操作形成：在电容器506上方形成一个或更多个保形层，在保形层上方形成蚀刻掩模，从通过蚀刻掩模暴露的保形层去除不想要的材料，并且随后去除蚀刻掩模。
在形成外涂层548之后，微电子器件500可以可选地烘干以从有机聚合物材料514去除水分子。微电子器件500可使用热板550来烘干，如图5A中所描绘，或者可通过其他方法烘干。烘干过程的热分布可根据有机聚合物材料514的厚度来选择。从有机聚合物材料514去除水分子的其他方法诸如长期暴露在真空下在该示例的范围内。
参考图5B，防潮层520形成于外涂层548上方，延伸到焊盘518(如果存在)上并延伸到衬底502上，以便覆盖和密封外涂层548和有机聚合物材料514。防潮层520包括通过ALD过程形成的一个或更多个氧化铝层。焊盘518可如参考图4B所描述的那样形成。可选的保护层522可形成于防潮层520上方，诸如参考图4B所描述。
参考图5C，微电子器件500通过图5B的分离区536而分离。防潮层520覆盖有机聚合物材料514的边缘并延伸到衬底502上。保护层522可有利地防止液态水在分离过程期间接触防潮层520。在分离后，可组装并封装微电子器件500。保护层522可在组装和封装期间有利地保护防潮层520免受机械损害。
图6A至图6D是以一种示例形成方法的顺序阶段描绘的另一示例微电子器件的横截面。参考图6A，微电子器件600包括无机材料的衬底602，衬底602可包括半导体材料诸如硅，或者可包括绝缘材料诸如玻璃或陶瓷。微电子器件600包括电容器606，电容器606具有第一板604、电容器电介质610以及与第一板604相对设置的第二板616。在该示例中，电容器电介质610包括可选的无机电介质材料612和有机聚合物材料614。替代性地，电容器电介质610可不含无机电介质材料612。第一板604、第二板616以及电容器电介质610可如参考本文公开的示例所描述的那样形成。在该示例中，微电子器件600可包括设置在第二板616上的焊盘618。在该示例中，外涂层648可形成于电容器606上方。例如，外涂层648可包括一个或更多个有机聚合物或无机电介质材料层。在该示例中，外涂层648延伸到焊盘618上，并暴露焊盘618的中心部分。
微电子器件600使用管芯附接材料626安装在载体624上。引线628附接到载体624以为微电子器件600提供外部连接。形成引线键合630以将焊盘618电连接到引线628中的一个。
参考图6B，组装的微电子器件600可以可选地烘干以从有机聚合物材料614去除水分子。微电子器件600可通过如图6B中所描绘的辐射热644来烘干，或通过其他方法烘干。烘干过程的热分布可根据有机聚合物材料614和外涂层648的厚度来选择。从有机聚合物材料614去除水分子的其他方法在该示例的范围内。
参考图6C，防潮层620形成于微电子器件600上，从而覆盖有机聚合物材料614和外涂层648的暴露的表面。防潮层620可如参考图4B所描述的那样形成。防潮层620中的多个氧化铝层在该示例中可尤其有效，以便覆盖组装的微电子器件600的复杂表面。图6C中未示出的可选的保护层可形成于防潮层620上方。防潮层620可在引线628的焊料区域被阻断，或者防潮层620可在之后从焊料区域去除。在组装的微电子器件600上形成防潮层620可有利地提供适应来自多个制造线的多种微电子器件的能力，所述制造线可不具有如参考图4A至图4E以及图5A至图5C所描述的那样在制造期间形成防潮层的能力。
参考图6D，微电子器件600诸如通过使用塑料树脂632包封来进行封装。其他封装件配置诸如气密密封的陶瓷封装件在该示例的范围内。防潮层620由包装材料覆盖，所述包装材料在该示例中为塑料树脂632，由此保护防潮层620不受机械损害和液态水的影响。
图7是另一示例微电子器件的横截面。微电子器件700包括无机材料的衬底702。微电子器件700包括电容器706，电容器706具有第一板704、电容器电介质710以及与第一板704相对设置的第二板716。在该示例中，电容器电介质710可不含无机电介质材料。在该示例的替代版本中，电容器电介质710可包括无机电介质材料与有机聚合物材料714。第一板704、第二板716以及电容器电介质710可如参考本文公开的示例所描述的那样形成。在该示例中，微电子器件700可包括设置在第二板716上的焊盘718。可选地，图7中未示出的外涂层可形成于电容器706上方。
微电子器件700使用管芯附接材料726安装在载体724上。引线728附接到载体724以为微电子器件700提供外部连接。形成引线键合730以将焊盘718电连接到引线728中的一个。微电子器件700诸如通过使用塑料树脂732包封来进行封装。其他封装件配置在该示例的范围内。
防潮层720形成于微电子器件700上，从而覆盖封装件，在该示例中，覆盖塑料树脂732。防潮层720可如参考图4B所描述的那样形成。防潮层720中的多个氧化铝层在该示例中可尤其有效，以便覆盖封装的微电子器件700的复杂表面。保护层752形成于防潮层720上方。保护层752可有利地减少对防潮层720的机械损害和液态水暴露。防潮层720和保护层752可在引线728的焊料区域被阻断，或者防潮层720可在之后从焊料区域去除。在封装的微电子器件700上形成防潮层720可有利地提供适应来自多个制造线和组装线的多种微电子器件的能力，所述制造线和组装线可不具有在制造和组装期间形成防潮层的能力。
在权利要求书的范围内，在所描述的实施例中修改是可能的，并且其他实施例是可能的。

Claims (19)

1.一种微电子器件，其包括：
无机材料的衬底；
电容器，其包括：第一板，其设置在所述衬底上方；第二板，其设置在所述衬底上方；以及电容器电介质，其包括设置在所述第一板与所述第二板之间的有机聚合物材料；以及
防潮层，其设置在所述电容器上方，所述防潮层包括具有非晶态显微结构的氧化铝层。
2.根据权利要求1所述的微电子器件，所述有机聚合物材料包括聚酰亚胺。
3.根据权利要求1所述的微电子器件，所述有机聚合物材料包括聚苯并恶唑即PBO。
4.根据权利要求1所述的微电子器件，其包括设置在所述防潮层上方的保护层，所述保护层包括基于二氧化硅的电介质材料。
5.根据权利要求1所述的微电子器件，所述防潮层包括多个交替的具有非晶态显微结构的氧化铝层和电介质材料层。
6.根据权利要求1所述的微电子器件，所述电容器电介质包括无机电介质材料。
7.根据权利要求6所述的微电子器件，所述防潮层延伸到所述无机电介质材料上。
8.根据权利要求6所述的微电子器件，所述防潮层延伸到所述衬底上。
9.根据权利要求1所述的微电子器件，所述微电子器件包括焊盘，所述焊盘电连接到所述第二板，所述防潮层部分地在所述焊盘上方延伸。
10.根据权利要求1所述的微电子器件，所述微电子器件包括电介质材料的外涂层，所述外涂层设置在所述电容器上方并且在所述防潮层下方。
11.根据权利要求1所述的微电子器件，所述防潮层设置在至少形成所述微电子器件的封装件的一部分的塑料包封材料下方。
12.根据权利要求1所述的微电子器件，所述防潮层设置在至少形成所述微电子器件的封装件的一部分的塑料包封材料外部。
13.一种形成微电子器件的方法，其包括：
提供无机材料的衬底；
形成所述微电子器件的电容器，包括：在所述衬底上方形成第一板；在所述衬底上方形成第二板；以及形成电容器电介质，其包括在所述第一板与所述第二板之间的有机聚合物材料；以及
在所述电容器上方形成防潮层，包括通过原子层沉积过程即ALD过程形成氧化铝层。
14.根据权利要求13所述的方法，所述有机聚合物材料包括聚酰亚胺。
15.根据权利要求13所述的方法，所述有机聚合物材料包括PBO。
16.根据权利要求13所述的方法，其中形成所述防潮层包括形成多个交替的通过ALD过程形成的氧化铝层和电介质材料层。
17.根据权利要求13所述的方法，其包括在所述防潮层上方形成保护层，所述保护层包括基于二氧化硅的电介质材料。
18.根据权利要求13所述的方法，其中形成所述电容器电介质包括在所述第一板与所述第二板之间形成无机电介质材料。
19.根据权利要求13所述的方法，其包括在形成所述防潮层之前烘干所述电容器电介质。
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