CN107004579B - 外延晶片、半导体元件、外延晶片的制造方法、以及半导体元件的制造方法 - Google Patents

外延晶片、半导体元件、外延晶片的制造方法、以及半导体元件的制造方法 Download PDF

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CN107004579B
CN107004579B CN201580064038.8A CN201580064038A CN107004579B CN 107004579 B CN107004579 B CN 107004579B CN 201580064038 A CN201580064038 A CN 201580064038A CN 107004579 B CN107004579 B CN 107004579B
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layer
buffer
electrode
buffer region
epitaxial wafer
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CN107004579A (zh
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佐藤宪
鹿内洋志
后藤博一
篠宫胜
土屋庆太郎
萩本和德
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Sanken Electric Co Ltd
Shin-Etsu Handotai Co Ltd
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Sanken Electric Co Ltd
Shin-Etsu Handotai Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
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    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
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    • H10D62/351—Substrate regions of field-effect devices
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CN201580064038.8A 2014-11-25 2015-11-06 外延晶片、半导体元件、外延晶片的制造方法、以及半导体元件的制造方法 Active CN107004579B (zh)

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JP2014237683A JP6180401B2 (ja) 2014-11-25 2014-11-25 エピタキシャルウェーハ、半導体素子、エピタキシャルウェーハの製造方法、並びに、半導体素子の製造方法
JP2014-237683 2014-11-25
PCT/JP2015/005562 WO2016084311A1 (ja) 2014-11-25 2015-11-06 エピタキシャルウェーハ、半導体素子、エピタキシャルウェーハの製造方法、並びに、半導体素子の製造方法

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EP3451364B1 (en) * 2017-08-28 2020-02-26 Siltronic AG Heteroepitaxial wafer and method for producing a heteroepitaxial wafer
EP3576132B1 (en) * 2018-05-28 2025-12-17 IMEC vzw A iii-n semiconductor structure and a method for forming a iii-n semiconductor structure
JP7312772B2 (ja) * 2018-06-14 2023-07-21 ナノシス， インコーポレイテッド エピタキシャル窒化ガリウムベース発光ダイオード、および、その製造方法
CN110233105B (zh) * 2019-06-20 2022-07-08 江苏能华微电子科技发展有限公司 一种翘曲可调的SiC基HEMT结构的制备方法及结构
TWI735212B (zh) * 2020-04-24 2021-08-01 環球晶圓股份有限公司 具有超晶格疊層體的磊晶結構
US11387356B2 (en) * 2020-07-31 2022-07-12 Vanguard International Semiconductor Corporation Semiconductor structure and high-electron mobility transistor device having the same
JP7654367B2 (ja) * 2020-08-24 2025-04-01 エア・ウォーター株式会社 化合物半導体基板および化合物半導体デバイス
KR102728898B1 (ko) * 2022-04-21 2024-11-13 웨이브로드 주식회사 3족 질화물 반도체 적층체를 제조하는 방법

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CN103633134A (zh) * 2013-12-12 2014-03-12 中山大学 一种厚膜高阻氮化物半导体外延结构及其生长方法
JP2014524661A (ja) * 2011-07-29 2014-09-22 ノースロップ グラマン システムズ コーポレーション ＡｌＮバッファＮ極ＧａＮＨＥＭＴプロファイル

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JP5309451B2 (ja) * 2007-02-19 2013-10-09 サンケン電気株式会社 半導体ウエーハ及び半導体素子及び製造方法
JP5309452B2 (ja) * 2007-02-28 2013-10-09 サンケン電気株式会社 半導体ウエーハ及び半導体素子及び製造方法
JP5477685B2 (ja) * 2009-03-19 2014-04-23 サンケン電気株式会社 半導体ウェーハ及び半導体素子及びその製造方法
JP5334057B2 (ja) * 2009-11-04 2013-11-06 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物積層基板
JP5660373B2 (ja) * 2010-10-29 2015-01-28 サンケン電気株式会社 半導体ウエーハ及び半導体素子
JP5708187B2 (ja) * 2011-04-15 2015-04-30 サンケン電気株式会社 半導体装置
JP5127978B1 (ja) * 2011-09-08 2013-01-23 株式会社東芝 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
JP5462377B1 (ja) * 2013-01-04 2014-04-02 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物エピタキシャル基板およびその製造方法

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CN103633134A (zh) * 2013-12-12 2014-03-12 中山大学 一种厚膜高阻氮化物半导体外延结构及其生长方法

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WO2016084311A1 (ja) 2016-06-02
CN107004579A (zh) 2017-08-01
TW201631635A (zh) 2016-09-01
JP6180401B2 (ja) 2017-08-16
US20170323960A1 (en) 2017-11-09
TWI610344B (zh) 2018-01-01
JP2016100508A (ja) 2016-05-30

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