CN106977204A - 在石榴石陶瓷中生成光学界面的方法 - Google Patents
在石榴石陶瓷中生成光学界面的方法 Download PDFInfo
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- CN106977204A CN106977204A CN201611043386.XA CN201611043386A CN106977204A CN 106977204 A CN106977204 A CN 106977204A CN 201611043386 A CN201611043386 A CN 201611043386A CN 106977204 A CN106977204 A CN 106977204A
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7706—Aluminates
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- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
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- A61B6/02—Arrangements for diagnosis sequentially in different planes; Stereoscopic radiation diagnosis
- A61B6/03—Computed tomography [CT]
- A61B6/032—Transmission computed tomography [CT]
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Abstract
本文中公开了方法，其包括在模具中布置具有用于制造闪烁体材料的组合物的粉末和压缩所述粉末以形成闪烁体材料；其中所述闪烁体材料的出射表面具有包含多个凸起的纹理，所述凸起降低出射表面处的全内反射并与没有所述凸起的表面相比增加离开出射表面的光子量大于或等于5%的量。
Description
背景
本公开涉及制造石榴石界面的方法和含有由其获得的石榴石的制品。
当闪烁体（scintillator）材料耦合至电子光传感器，如光电倍增管（PMT）、光电二极管、硅光电倍增器等时，获得闪烁检测器（scintillation detector）或闪烁计数器（scintillation counter）。光电倍增管吸收闪烁体材料发射的光并通过光电效应将其转化成电子电流。这些电子（有时称作光电子）的随后倍增产生电脉冲，其随后可被分析并产生关于最初冲击闪烁体材料的粒子的有意义的信息。闪烁体是在被电离辐射激发时产生光的材料。发光材料在被入射粒子冲击时吸收其能量并闪烁（即以光形式再发射吸收的能量）。
闪烁体材料的一个有用的特征是在闪烁过程中产生的光量，其可作为通过吸收致电离粒子的1 MeV能量产生的闪烁光子数测量。仅少部分的在闪烁事件中产生的闪烁光子到达检测器。相当大量的闪烁光子通过吸收损失或通过在检测器模块的光学界面（opticalinterface）处的损失而损失。
改进光收集效率的方式之一是通过改进晶体均匀性来改进闪烁体材料的光学透明度。这可能导致该材料的降低的闪烁光子吸收和光子转移性质。另一方法是改变光子离开闪烁体材料表面所处的角出射（exit）分布（出射角分布）。
在计时应用中，希望使闪烁体材料出射表面（exit surface）处发生的反射数最小化并由此降低光子到达光传感器的时间的分散。这可通过由形成轮廓分明（well-defined）的凹槽的微结构来修饰闪烁体材料的出射表面而实现。通过使用这些凹槽，可以扩大在闪烁体出射处传播的入射光子的接受角（acceptance angles）的范围。图1描绘在闪烁体的出射表面上布置凹槽以减少由于全内反射而从界面反射回的光子数的一种方式。图1显示布置在原硅酸镥闪烁体(LSO)晶体102的出射表面上的胶块106。在闪烁体材料102的出射表面上还布置棱锥体的阵列104形式的微纹理（即凹槽）。棱锥体的存在降低如果闪烁体材料102的出射表面平坦将发生的全内反射的量。
可以使用分别如图2(A)和图2(B)中所示的具有和不具有棱锥体104的闪烁体102的射线跟踪模拟证实由闪烁体材料的出射表面上的棱锥体的存在造成的效应。图2(A)将闪烁体102描绘为具有平坦的出射表面。由于该平坦的出射表面，以大于或等于临界角的角度撞击在该表面上的一些光子在界面处完全反射回闪烁体材料102中。
图2(B)描绘用棱锥体104纹理化的（textured）闪烁体材料102表面。棱锥体104允许更高百分比的光子（其具有受闪烁体102和任何周围光学元件的形状影响的入射角分布）穿过界面，这是因为它们以小于临界角的角度入射在该界面上。
可以使用各种方法制造闪烁体材料的纹理化的出射表面，例如机械抛光、激光切割、化学蚀刻或甚至粘合具有与闪烁体的折光指数密切匹配的折光指数的附加结构。由于用于高能量应用的大多数闪烁体材料与用作光学耦合剂的大多数光学粘合剂相比具有相对高的折光指数的事实，后一方法特别困难。在这种情况下，在光学界面处发生光反射损失，在此损失相当大量的闪烁光子。此外，通过如机械抛光、激光切割或化学蚀刻的方法在闪烁体材料的表面上生成这样的结构产生另一问题。在闪烁体材料表面的制造过程中生成的高应力造成晶体表面的裂化或龟裂。因此希望开发制备具有纹理化表面（其可用于保存入射光子）并且不随时间劣化的闪烁体材料的方法。
概述
本文中公开了方法，其包括在模具中布置具有用于制造闪烁体材料的组合物的粉末和压缩所述粉末以形成闪烁体材料；其中所述闪烁体材料的出射表面具有包含多个凸起的纹理，所述凸起降低出射表面处的全内反射并与没有凸起的表面相比增加离开出射表面的光子量大于或等于5%的量。
本文中公开了方法，其包括通过增材制造（additive manufacturing）在闪烁体材料的出射表面上布置几何体（geometrical object）；其中所述增材制造包括添加闪烁体材料的连续层以形成所述几何体；且
其中所述几何体降低出射表面处的全内反射并与没有所述几何体的表面相比增加离开出射表面的光子量大于或等于5%的量。
本文中公开了包含通过包括以下步骤的方法制造的具有纹理化出射表面的闪烁体材料的制品：在模具中布置具有用于制造闪烁体材料的组合物的粉末；和压缩所述粉末以形成闪烁体材料；其中所述闪烁体材料的出射表面具有包含多个凸起的纹理，所述凸起降低出射表面处的全内反射并与没有所述凸起的表面相比增加离开出射表面的光子量大于或等于5%的量。
附图简述
图1描绘在闪烁体的出射表面上布置凹槽以减少由于全内反射而从界面反射回的光子数的一种方式；
图2(A)描绘具有平坦出射表面的闪烁体和光子由于全内反射而反射回闪烁体材料中；
图2(B)描绘具有由于降低的全内反射而允许更大的光子提取效率的纹理化表面的闪烁体材料；
图3(A)显示布置在闪烁体材料的出射表面上的多个棱锥体；
图3(B)显示布置在闪烁体材料的出射表面上的多个椭圆体；
图3(C)显示布置在闪烁体材料的出射表面上的多个半球体；
图3(D)显示布置在闪烁体材料的出射表面上的多个截棱锥（truncated pyramid）；
图4(A)显示在几何体是棱锥体时如何测量角度α；
图4(B)显示在几何体是椭圆体105时如何测量角度α；
图5显示一个实施方案，其中该纹理化包括在闪烁体材料的出射表面上布置多个棱锥体；
图6是显示当宽度从100至500微米变化时增益光产额（light yield）提高多至27%的曲线图；
图7显示其中纹理包含多个截棱锥的表面；和
图8是显示来自图7的纹理的表面的光产额的曲线图。
详述
本文中公开了用于制造具有纹理化出射表面的闪烁体材料的方法。在允许在制造过程期间的晶界生长的方法中制造具有纹理化出射表面的闪烁体材料。更具体地，对用于制造所需闪烁体材料的具有指定化学计量下的配方的粉末施以在同时退火情况下的压缩以促进该方法过程中的晶界生长。制造过程中的晶界生长降低造成及晶体表面的裂化或龟裂的应力。该闪烁体材料可以是单晶、多晶或包含其组合。它们可以由陶瓷制造但不限于此。
在一个实施方案中，所述方法包括在具有被设计成在闪烁体材料上产生所需纹理化表面的内表面的模具中压缩粉末（其具有所需的化学计量）。在一个实施方案中，该模具具有纹理与晶体的出射表面上需要的纹理相反的内表面。当在模具中对该粉末施以压缩时，所需纹理被转移到晶体表面上。该方法包括压制具有闪烁体组合物的粉末以制造具有纹理化出射表面的闪烁体材料。该纹理化出射表面包含多个向外或向内的凸起（下文的“几何体”），其降低出射表面处的全内反射并与没有向外凸起的表面相比增加离开出射表面的光子量大于或等于5%的量。
晶界生长过程仅由晶界的局部曲率驱动。晶界表面积的总量的降低对应于系统使该系统的总自由能最小化的趋势。可以通过在粉末在模具中的压缩过程中在粉末体积中施加弹性力或应变或温度梯度来引发晶界生长以降低自由表面能的过程。晶界生长速率与晶界处的自由能总量（有时也被称作晶界能）成比例。在一个实施方案中，该方法可应用于在不施加压力的情况下烧结的陶瓷材料，常被称作无压烧结法。压缩步骤因此可以是任选的。
所述方法包括将具有所需化学计量的粉末布置在模具中并在有效促进晶界生长的温度下压缩该粉末。该粉末具有在经受压缩时产生具有纹理化表面的所需闪烁体材料的组合物。该粉末组合物可以是下文详述的式代表的那些之一。
在一些实施方案中，该粉末状组合物可包含钆和镓，其具有式(1):
M1 aM2 bM3 cM4 dO12 (1)
其中O代表氧，M1、M2、M3和M4代表彼此不同的第一、第二、第三和第四金属，其中a + b +c+ d的总和为大约8，其中“大约”被定义为偏离理想值±10%，其中“a”具有大约2至大约3.5，优选大约2.4至大约3.2，且更优选大约3.0的值，“b”具有0至大约5，优选大约2至大约3，且更优选大约2.1至大约2.5的值，其中“b”和“c”、“b”和“d”或“c”和“d”不能两者同时都等于0，其中“c”具有0至大约5，优选大约1至大约4，优选大约2至大约3，且更优选大约2.1至大约2.5的值，“d”具有0至大约1，优选大约0.001至大约0.5，且更优选大约0.003至大约0.3的值。
在一个实施方案中，M1是稀土元素，包括但不限于钆、钇、镥、钪或其组合。M1优选是钆。M2是铝或硼，M3是镓且M4是共掺质（codopant）并包括铊、铜、银、铅、铋、铟、锡、锑、钽、钨、锶、钡、硼、镁、钙、铈、钇、钪、镧、镥、镨、铽、镱、钐、铕、钬、镝、铒、铥或钕中的一种或多种。
对于M1，一部分镓可被钇、钆、镥、镧、铽、镨、钕、铈、钐、铕、镝、钬、铒、镱中的一种或多种或其组合替代。在一个实施方案中，一些镓可被钇替代。M3优选是铝。
在一个实施方案中，共掺质M4包括Tl+、Cu+、Ag+、Au+、Pb2+、Bi3+、In+、Sn2+、Sb3+、Ce3+、Pr3+、Eu2+、Yb2+、Nb5+、Ta5+、W6+、Sr2+、B3+、Ba2+、Mg2+、Ca2+或其组合。
使用式(1)的组合物通过该方法生长的多晶或单晶的一些实例是(GAGG-钆-铝-镓石榴石)、(GGAG – 钆-镓-铝石榴石)、(GYGAG – 钆-钇-镓-铝石榴石)、(GSGG – 钆-钪-镓石榴石)、(GYAG – 钆-钇-铝石榴石)、(GSAG – 钆-钪-铝石榴石)、(GGG – 钆-镓石榴石)、(GYSAG – 钆-钇-钪-铝石榴石)或(GLAGG – 钆-镥-铝-镓石榴石)。如果需要，上面提及的式所表示的多晶或单晶各自可以被铈或镨共掺杂。
可用于制造纹理化表面的另一组合物包括具有式(2)、(3)或(4)的碘化物
ASr1-xEuxI3 (2)
A3Sr1-xEuxI5； (3)；或
ASr2(1-x)Eu2xI5 (4)
其中A基本由任何碱金属元素，如锂、钠、钾、铷、铯或其组合构成，且其中0≦x≦1，优选0.05≦x≦0.995，且更优选0.1≦x≦0.9。在一些实施方案中，示例性组合物包括CsSr1- xEuxI3、Cs3Sr1-xEuxI5和CsSr2(1-x)Eu2xI5。示例性组合物包括CsSr0.9-0.99Eu0.01-0.10I3 和CsEuI3。
在一些其它实施方案中，可用于制造纹理化表面的另一组合物包括具有式(5)或(6)的溴化物或卤化物
A3M6Br6(1-x)Cl6x、 (5)；或
AM6 2Br7(1-x)Cl7x, (6)
其中0≦x≦1；优选0.05≦x≦0.995，且更优选0.1≦x≦0.9；其中A是Li、Na、K、Rb或其组合；且其中M6是铈、钪、钇、镧、镥、钆、镨、铽、镱、钕或其组合。
在另一些实施方案中，用于制造纹理化表面的组合物是具有式(7)的原硅酸镥(LSO)
M7 2xLu2(1-x)SiO5 (7)
其中M7是铈、钪、钇、镧、镥、钆、镨、铽、镱、钕或其组合，优选铈；其中x是0.001至0.1，优选0.005至0.015。示例性的LSO组合物是Ce:Lu2SiO5。
用于制造闪烁体材料的粉末包含具有2纳米至500微米，优选5纳米至50纳米的平均粒度的粒子。测量粒子的回转半径以确定平均粒度。可以使用光散射或电子显微术来确定粒度。
粉末可以在球磨机、辊磨机（roll mill）或其它粉碎装置中进一步粉碎。如果希望使用特定尺寸的粒子，可随后对该粉碎的粉末施以任选筛分过程。可以使用喷雾火焰热解（Spray Flame Pyrolysis）（FSP）、火焰喷雾辅助热解（FSAP）方法或通过使用各种“湿化学”合成方法（包括基于溶胶-凝胶的合成方法）来制造粉末粒子。
可以将所需粉末布置在模具（也称作模头）中并施以等静压制（也称作液静压制或热等静压制）或单轴压缩。等静压制可以在室温（23℃）或在升高的温度下进行。在等静压制中，可以使用惰性气体，如氩气对模具中含有的粉末施加压力，以使粉末不与该气体或与自身化学反应。任选加热该模具，以使模具内的压力提高。许多系统使用相关的气体泵送实现所需的压力水平。从所有方向对材料施加压力（因此为术语“等静压”）。
在7,350 psi（1 MPa）至45,000 psi（500 MPa），优选10,000 psi（66 MPa）至30,000 psi（195 MPa）的压力下等静压地（也称作流体静力地）施加惰性气体。在一些实施方案中，压制过程中的温度可以为室温。在另一实施方案中，在等静压力或单轴压力的施加过程中可以使用900℉（482℃）至3992℉（2200℃），优选1472℉（800℃）至3962℉（2000℃），且更优选1650℉（900℃）至1750℉（3182℃）的升高的温度。
优选通过对流或传导传热进行退火。在一个实施方案中，可以与对流或传导加热同时或相继进行辐射加热（例如射频加热、微波加热或红外加热）。在一个实施方案中，在样品仍在压机中并在压力下的同时通过传导或传导和对流的组合进行加热。
可以同时或相继进行对组合物的加热和压制。在一个实施方案中，可以同时进行对组合物的加热和压制。热和压力的同时施加通过塑性变形、蠕变、晶界生长和扩散粘结（diffusion bonding）的组合消除了内部空隙和微孔隙。该方法改善组件的抗疲劳性并降低使用过程中的裂化和龟裂。
在单轴压缩中，可以使用上文对等静压缩规定的压力和温度。但是，仅在两个相互反向的方向上施加压缩压力以制备闪烁体材料。在单轴压缩中，可以通过使用与模具壁具有小间隙的相对冲头对模具中含有的粉末施加压力。利用壁间隙防止冲头卡在模具中。壁间隙取决于粉末粒度并可根据粒度而变。粒度越大，壁腔间隙越大。
在一些实施方案中，在压制操作过程中可以与粉末联合使用粘合剂或润滑剂。润滑剂促进冲头在压缩过程中在模具中的易移动性。可以使用粘合剂粘合粒子以防止压制操作过程中的粒子损失。
纹理化可包括将各种不同的几何体布置在闪烁体材料的出射表面上。纹理化可包括向外凸起或向内凸起。向外凸起可包括将几何体布置在闪烁体材料的出射表面上。向内凸起可包括在闪烁体出射表面处从其切割出几何体。向内凸起因此将包括挖空闪烁体材料以提供几何体。也可以使用向内和向外凸起的组合。在一个实施方案中，纹理化可包括为光子晶体的几何体。光子晶体是以与离子晶格影响固体中的电子运动大致相同的方式影响光子运动的周期性光学纳米结构。
几何结构优选是三维几何结构，其中以这样的方式布置几何体的底部以使其接触闪烁体材料的出射表面。所选（几何体的）几何结构应优选是其中光子以小于临界角的角度接触几何体的出射表面的几何结构。所述几何结构包括棱锥体、锥形体、半球体、椭圆体、截棱锥、巴克球（buckyball）（富勒烯）、截头锥形体、截头半球体、截头椭圆体、截头球体、截头富勒烯等或其组合。可以使用形状的组合，如安装在截棱锥上的富勒烯、安装在锥形截面上的球体等。也可以使用分级结构。例如，也可以使用布置在另一半球体上的半球体来形成纹理化。在一个示例性实施方案中，布置在闪烁体材料的出射表面上的几何体是棱锥体。
图3(A)显示布置在闪烁体材料的出射表面上的多个棱锥体104。图3(B)显示布置在闪烁体材料的出射表面上的多个椭圆体105。图3(C)显示布置在闪烁体材料的出射表面上的多个半球体107。图3(D)显示布置在闪烁体材料的出射表面上的多个截棱锥109。尽管图3(D)显示截头表面平行于闪烁体材料的出射表面，但如果需要，其可以不平行。
几何体的侧面与出射表面之间的接触角决定光子提取效率。图4(A)显示在几何体为向外凸起，例如棱锥体104时如何测量该角度。在图4(A)中，使用棱锥体104的侧面与闪烁体材料102的出射表面之间的角度α作为对提取效率的量度。该手段可用于其它几何体，如截棱锥、锥形体、锥形截面等。
在图4(B)中，有两种几何体 – 向外凸起的几何体（椭圆体105）和向内凸起的几何体（楔形体111）。向外凸起的几何体是椭圆体105。使用在椭圆体边缘的接触点处对椭圆体表面的切线与出射表面之间的角度α作为对提取效率的量度。该手段可用于其它几何体，如半球体、富勒烯、截头富勒烯等。
对于图4(B)中的向内凸起的几何体，使用在楔形体111的边缘的接触点处对楔形体111的表面的切线与闪烁体材料的出射表面之间的角度α作为对提取效率的量度。
角度α优选小于闪烁体材料的临界角。在一个实施方案中，对于向外凸起，角度α可以为25至60度，优选30至55度，且更优选35至45度不等。要指出，对于向内凸起，α可以大于90度并可以为25至135度，优选65至130度，且更优选95至125度不等。下表1显示光子的提取效率如何随具有纹理化表面的闪烁体中的角度α而变。表1中所示的值是模拟研究的结果。
表1
| 角度(α) | 提取效率 |
| 0 [平坦平面] | 48% |
| 30 | 65% |
| 40 | 65% |
| 45 | 65% |
| 50 | 64% |
| 60 | 60% |
该模拟显示，在不经历多重内反射的情况下可以成功提取明显更大量的接近界面的光子。使用LSO的计算表明与其中α的值为0度的那些表面相比对于α的值为40度而言光产额增加大约17%。由上文的数据可以看出，通过将几何体布置在闪烁体材料的出射表面上，光子提取效率提高了大于5%，优选5至25%，优选8至22%，且更优选10至20%的量。
在一个实施方案中，布置在闪烁体材料的出射表面上的各几何体的尺寸达到光的波长的程度（即它们在微米和纳米尺寸范围内）。在一个实施方案中，几何体的尺寸（如棱锥体的（一个或多个）宽度和高度或球体的半径或椭圆体的小轴和大轴）为50纳米至700纳米，优选100至600纳米，且更优选300至500纳米。几何体之间的周期性（periodicity）可以为50纳米至1000微米，优选400纳米至500微米。
在一个实施方案中，可以使用增材制造（3D打印）来添加纹理，其中在计算机控制下将几何体添加到闪烁体的表面上。在3D制造中，在计算机控制下形成材料的连续层以形成具有所需几何结构的对象。特别地，增材制造包括添加闪烁体材料的连续层以形成几何体。如果需要，可以对整个对象（闪烁体材料及添加的几何体）施以在适当温度下的任选的退火以促进晶粒生长。
本文中公开的用于制造闪烁体材料的方法具有许多优点。可以在闪烁体材料上布置纹理以改进光子提取效率而不造成裂化或龟裂。其通过塑性变形、蠕变和晶界生长减少或消除内部空隙和微孔隙。该方法改善组件的抗疲劳性。本文中制造的闪烁体材料可用于成像制品和装置，例如正电子发射断层扫描、计算机断层扫描或单光子发射计算机断层扫描机。
通过下列非限制性实施例例示本文中公开的闪烁体材料和方法。
实施例
该实施例显示提取效率如何随布置在晶体的出射表面上的多个几何体中的尺寸优化而提高。图5显示了一个实施方案，其中该纹理化包括在闪烁体材料的出射表面上布置多个棱锥体。棱锥体底部的宽度为100至500微米不等。选择棱锥体之间的间距（pitch）（周期性）为500微米。图6是显示当宽度从100至600微米改变时增益光产额提高多至27%的曲线图。
图7显示其中纹理包括截棱锥的表面。图8是显示来自图7的纹理的表面的光产额的曲线图。从图8中可以看出，当棱锥体的宽度为600至1400微米时光产额的增益提高多至20%。
要指出，本文中详述的所有范围包括端点。来自不同范围的数值可组合。
过渡术语“包含/包括”涵盖过渡术语“由...构成”和“基本由...构成”。
术语“和/或”包括“和”以及“或”两者。例如，“A和/或B”被解释为A、B，或A和B。
术语“a”、“an”和“the”不是指量的限制，而被解释为覆盖单数和复数两者，除非本文中另行指明或上下文明显有悖于此。
说明书通篇提到的“一些实施方案”、“一个实施方案”等是指关于该实施方案描述的特定要素包括在本文中描述的至少一个实施方案中，并且可以存在或可以不存在于其它实施方案中。此外，要理解的是，所描述的要素可以在各种实施方案中以任何合适的方式组合。
尽管已经参照一些实施方案描述了本发明，但本领域技术人员会理解，在不背离本发明的范围的情况下可以作出各种变动且其要素可被等同内容替代。此外，在不背离本发明的基本范围的情况下可以作出许多修改以使特定情况或材料适应本发明的教导。因此，本发明无意局限于作为实施本发明所涉及的最佳实施方式而公开的特定实施方案，而是本发明将包括落在所附权利要求书的范围内的所有实施方案。
Claims (27)
1.方法，其包括：
在模具中布置具有用于制造闪烁体材料的组合物的粉末；和
压缩所述粉末以形成闪烁体材料；其中所述闪烁体材料的出射表面具有包含多个凸起的纹理，所述凸起降低出射表面处的全内反射并与没有所述凸起的表面相比增加离开出射表面的光子量大于或等于5%的量。
2.权利要求1的方法，其中所述闪烁体材料具有式(1)的组合物，
M1 aM2 bM3 cM4 dO12 (1)
其中
O代表氧，
M1、M2、M3和M4代表彼此不同的第一、第二、第三和第四金属，
a + b + c+ d的总和为大约8，其中
“a”具有大约2至大约3.5的值，
“b”具有0至大约5的值，
“c”具有0至大约5的值，
“d”具有0至大约1的值，其中“b”和“c”、“b”和“d”或“c”和“d”不能两者同时都等于0，
M1是稀土元素，包括但不限于钆、钇、镥、钪或其组合，
M2是铝或硼，
M3是镓，且
M4是共掺质并包括铊、铜、银、铅、铋、铟、锡、锑、钽、钨、锶、钡、硼、镁、钙、铈、钇、钪、镧、镥、镨、铽、镱、钐、铕、钬、镝、铒、铥或钕中之一。
3.权利要求2的方法，其中对于M1，一部分钆可被钇、镥、镧、铽、镨、钕、铈、钐、铕、镝、钬、铒、镱中的一种或多种或其组合替代。
4.权利要求2的方法，其中M1是钆且M2是铝。
5.权利要求2的方法，其中
“a”具有大约2.4至大约3.2的值，
“b”具有大约2至大约3的值，
“c”具有大约1至大约4的值，且
“d”具有大约0.001至大约0.5的值。
6.权利要求1的方法，其中所述凸起包括向外凸起、向内凸起或其组合。
7.权利要求1的方法，其中所述凸起包括具有以30至60度的角度倾斜于出射表面的侧面的几何体。
8.权利要求1的方法，其中所述几何体具有至少一个50至700纳米大小的尺寸。
9.权利要求1的方法，其中所述几何体是棱锥体、锥形体、半球体、椭圆体、截棱锥、富勒烯、截头锥形体、截头半球体、截头椭圆体、截头球体、截头富勒烯或其组合。
10.权利要求1的方法，其中几何体之间的周期性为300纳米至1000微米。
11.权利要求1的方法，其中压缩粉末包括单轴压缩或等静压缩。
12.权利要求1的方法，其进一步包括通过热传导或对流加热所述粉末。
13.权利要求1的方法，其进一步包括通过电磁辐射加热所述粉末。
14.权利要求11的方法，其中所述单轴压缩或等静压缩在1 MPa至500 MPa的压力下进行。
15.权利要求11的方法，其中所述单轴压缩在室温下进行。
16.权利要求12的方法，其中将所述粉末加热到480℃至2200℃的温度。
17.权利要求11的方法，其中在压缩过程中在所述闪烁体材料中发生晶界生长。
18.方法，其包括
通过增材制造在闪烁体材料的出射表面上布置几何体；
其中所述增材制造包括添加闪烁体材料的连续层以形成所述几何体；且
其中所述几何体降低出射表面处的全内反射并与没有所述几何体的表面相比增加离开出射表面的光子量大于或等于5%的量。
19.权利要求18的方法，其进一步包括加热所述闪烁体材料。
20.制品，其包含：
通过方法制造的具有纹理化出射表面的闪烁体材料，所述方法包括：
在模具中布置具有用于制造闪烁体材料的组合物的粉末；和
压缩所述粉末以形成闪烁体材料；其中所述闪烁体材料的出射表面具有包含多个凸起的纹理，所述凸起降低出射表面处的全内反射并与没有所述凸起的表面相比增加离开出射表面的光子量大于或等于5%的量。
21.权利要求20的制品，其中向外凸起包括具有以30至60度的角度倾斜于出射表面的侧面的几何体。
22.权利要求20的方法，其中所述几何体具有至少一个50至700纳米大小的尺寸。
23.权利要求20的方法，其中所述几何体是棱锥体、锥形体、半球体、椭圆体、截棱锥、富勒烯、截头锥形体、截头半球体、截头椭圆体、截头球体、截头富勒烯或其组合。
24.权利要求20的方法，其中几何体之间的周期性为50纳米至1000微米。
25.权利要求20的方法，其中所述几何体包括光子晶体。
26.包括权利要求20的制品的成像装置。
27.权利要求26的成像装置，其中所述成像装置是正电子发射断层扫描、计算机断层扫描或单光子发射计算机断层扫描机。
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| US9650569B1 (en) | 2017-05-16 |
| EP3176144A1 (en) | 2017-06-07 |
| KR20170066234A (ko) | 2017-06-14 |
| JP2017116532A (ja) | 2017-06-29 |
| RU2016146110A3 (zh) | 2018-05-24 |
| US20170145305A1 (en) | 2017-05-25 |
| EP3176144B1 (en) | 2020-12-30 |
| JP6539635B2 (ja) | 2019-07-03 |
| ES2863991T3 (es) | 2021-10-13 |
| KR101903729B1 (ko) | 2018-10-04 |
| RU2016146110A (ru) | 2018-05-24 |
| RU2663737C2 (ru) | 2018-08-09 |
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