CN106935491B - 一种激光退火装置及其退火方法 - Google Patents

一种激光退火装置及其退火方法 Download PDF

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Publication number
CN106935491B
CN106935491B CN201511021931.0A CN201511021931A CN106935491B CN 106935491 B CN106935491 B CN 106935491B CN 201511021931 A CN201511021931 A CN 201511021931A CN 106935491 B CN106935491 B CN 106935491B
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laser
annealing
silicon wafer
temperature
control system
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Chinese (zh)
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CN106935491A (zh
Inventor
崔国栋
兰艳平
马明英
宋春峰
孙刚
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Shanghai Xinshang Microelectronics Technology Co ltd
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Shanghai Micro Electronics Equipment Co Ltd
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Priority to CN201511021931.0A priority Critical patent/CN106935491B/zh
Application filed by Shanghai Micro Electronics Equipment Co Ltd filed Critical Shanghai Micro Electronics Equipment Co Ltd
Priority to KR1020187021712A priority patent/KR102080613B1/ko
Priority to US16/067,353 priority patent/US20190015929A1/en
Priority to JP2018534060A priority patent/JP6831383B2/ja
Priority to PCT/CN2016/112662 priority patent/WO2017114424A1/zh
Priority to EP16881213.9A priority patent/EP3399543B1/en
Priority to TW105143862A priority patent/TW201729295A/zh
Publication of CN106935491A publication Critical patent/CN106935491A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/034—Observing the temperature of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Mechanical Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
CN201511021931.0A 2015-12-30 2015-12-30 一种激光退火装置及其退火方法 Active CN106935491B (zh)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CN201511021931.0A CN106935491B (zh) 2015-12-30 2015-12-30 一种激光退火装置及其退火方法
US16/067,353 US20190015929A1 (en) 2015-12-30 2016-12-28 Laser annealing device and annealing method therefor
JP2018534060A JP6831383B2 (ja) 2015-12-30 2016-12-28 レーザーアニーリング装置及びそのためのレーザーアニーリング方法
PCT/CN2016/112662 WO2017114424A1 (zh) 2015-12-30 2016-12-28 一种激光退火装置及其退火方法
KR1020187021712A KR102080613B1 (ko) 2015-12-30 2016-12-28 레이저 어닐링 장치 및 그 어닐링 방법
EP16881213.9A EP3399543B1 (en) 2015-12-30 2016-12-28 Laser annealing device and annealing method therefor
TW105143862A TW201729295A (zh) 2015-12-30 2016-12-29 一種雷射退火裝置及其退火方法

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CN201511021931.0A CN106935491B (zh) 2015-12-30 2015-12-30 一种激光退火装置及其退火方法

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CN106935491B true CN106935491B (zh) 2021-10-12

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US (1) US20190015929A1 (enExample)
EP (1) EP3399543B1 (enExample)
JP (1) JP6831383B2 (enExample)
KR (1) KR102080613B1 (enExample)
CN (1) CN106935491B (enExample)
TW (1) TW201729295A (enExample)
WO (1) WO2017114424A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10270032B2 (en) 2017-09-13 2019-04-23 Int Tech Co., Ltd. Light source and a manufacturing method therewith
US10768532B2 (en) * 2018-05-15 2020-09-08 International Business Machines Corporation Co-optimization of lithographic and etching processes with complementary post exposure bake by laser annealing
KR102546719B1 (ko) * 2018-09-04 2023-06-21 삼성전자주식회사 모니터링 장치 및 모니터링 방법
CN109686686B (zh) * 2019-01-30 2024-06-14 北京华卓精科科技股份有限公司 激光热处理装置及激光热处理方法
CN110181165B (zh) * 2019-05-27 2021-03-26 北京华卓精科科技股份有限公司 激光预热退火系统和方法
WO2021020615A1 (ko) * 2019-07-30 2021-02-04 (주)에이치아이티오토모티브 열처리 장치
CN110918770B (zh) * 2019-12-16 2021-01-15 山东大学 一种多点激光冲击成形装置及成形方法
CN112769025A (zh) * 2020-12-30 2021-05-07 中国科学院微电子研究所 光学整形装置及方法
CN113345806B (zh) * 2021-04-23 2024-03-05 北京华卓精科科技股份有限公司 一种SiC基半导体的激光退火方法
CN113305389A (zh) * 2021-06-08 2021-08-27 武汉虹信科技发展有限责任公司 一种激光焊接装置及激光焊接方法
US12469717B2 (en) * 2021-08-27 2025-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. Systems, methods, and semiconductor devices
CN114932308B (zh) * 2022-04-11 2024-01-30 深圳市韵腾激光科技有限公司 一种动态Mini显示单元修复系统
CN116230509A (zh) * 2022-09-08 2023-06-06 北京华卓精科科技股份有限公司 一种激光退火方法及系统
CN115424961B (zh) * 2022-09-29 2025-09-02 上海集成电路研发中心有限公司 激光退火设备及激光退火控制方法
CN115602751A (zh) * 2022-10-25 2023-01-13 江苏华兴激光科技有限公司（Cn） 一种用于红外雪崩探测芯片的激光退火装置及其检测方法
CN116275509B (zh) * 2023-05-15 2023-09-08 苏州亚太精睿传动科技股份有限公司 一种激光焊接方法
CN116790851A (zh) * 2023-06-20 2023-09-22 京东方科技集团股份有限公司 退火装置、其检测方法、退火设备、以及退火工艺方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101160646A (zh) * 2005-04-13 2008-04-09 应用材料公司 双波长热流激光退火
CN103903967A (zh) * 2012-12-28 2014-07-02 上海微电子装备有限公司 一种激光退火装置及方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663513A (en) * 1985-11-26 1987-05-05 Spectra-Physics, Inc. Method and apparatus for monitoring laser processes
JP3301054B2 (ja) * 1996-02-13 2002-07-15 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
JP4514861B2 (ja) * 1999-11-29 2010-07-28 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法および半導体装置の作製方法
US8217304B2 (en) * 2001-03-29 2012-07-10 Gsi Group Corporation Methods and systems for thermal-based laser processing a multi-material device
TW521310B (en) * 2001-02-08 2003-02-21 Toshiba Corp Laser processing method and apparatus
TW582062B (en) * 2001-09-14 2004-04-01 Sony Corp Laser irradiation apparatus and method of treating semiconductor thin film
JP2003347236A (ja) * 2002-05-28 2003-12-05 Sony Corp レーザ照射装置
AU2003258289A1 (en) * 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York A single-shot semiconductor processing system and method having various irradiation patterns
JP2004119971A (ja) * 2002-09-04 2004-04-15 Sharp Corp レーザ加工方法およびレーザ加工装置
US6747245B2 (en) * 2002-11-06 2004-06-08 Ultratech Stepper, Inc. Laser scanning apparatus and methods for thermal processing
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
KR101041066B1 (ko) * 2004-02-13 2011-06-13 삼성전자주식회사 실리콘 결정화 방법, 이를 이용한 실리콘 결정화 장치,이를 이용한 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 이를 이용한 표시장치
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
JP2007251015A (ja) * 2006-03-17 2007-09-27 Sumitomo Heavy Ind Ltd レーザアニール装置及びレーザアニール方法
US8148663B2 (en) * 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
US20090114630A1 (en) * 2007-11-05 2009-05-07 Hawryluk Andrew M Minimization of surface reflectivity variations
US8674257B2 (en) * 2008-02-11 2014-03-18 Applied Materials, Inc. Automatic focus and emissivity measurements for a substrate system
JP5590925B2 (ja) * 2010-03-10 2014-09-17 住友重機械工業株式会社 半導体装置の製造方法及びレーザアニール装置
CN102062647B (zh) * 2010-11-24 2012-08-08 中国科学院半导体研究所 测量半导体激光器腔面温度的测试系统
US8309474B1 (en) * 2011-06-07 2012-11-13 Ultratech, Inc. Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication
US9302348B2 (en) * 2011-06-07 2016-04-05 Ultratech Inc. Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication
JP6030451B2 (ja) * 2011-06-15 2016-11-24 株式会社日本製鋼所 レーザ処理装置およびレーザ処理方法
US8546805B2 (en) * 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
SG195515A1 (en) * 2012-06-11 2013-12-30 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times
CN103578943B (zh) * 2012-07-25 2017-05-31 上海微电子装备有限公司 一种激光退火装置及激光退火方法
US20140273533A1 (en) * 2013-03-15 2014-09-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor Annealing Method Utilizing a Vacuum Environment
US10226837B2 (en) * 2013-03-15 2019-03-12 Nlight, Inc. Thermal processing with line beams
CN104078339B (zh) * 2013-03-26 2017-08-29 上海微电子装备有限公司 一种激光退火装置和方法
TW201528379A (zh) * 2013-12-20 2015-07-16 Applied Materials Inc 雙波長退火方法與設備
CN106471609B (zh) * 2014-07-02 2019-10-15 应用材料公司 用于使用嵌入光纤光学器件及环氧树脂光学散射器的基板温度控制的装置、系统与方法
US10088365B2 (en) * 2016-11-08 2018-10-02 Sumitomo Heavy Industries, Ltd. Laser annealing apparatus
DE102017100015A1 (de) * 2017-01-02 2018-07-05 Schott Ag Verfahren zum Trennen von Substraten

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101160646A (zh) * 2005-04-13 2008-04-09 应用材料公司 双波长热流激光退火
CN103903967A (zh) * 2012-12-28 2014-07-02 上海微电子装备有限公司 一种激光退火装置及方法

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WO2017114424A1 (zh) 2017-07-06
EP3399543A1 (en) 2018-11-07
JP6831383B2 (ja) 2021-02-17
US20190015929A1 (en) 2019-01-17
EP3399543A4 (en) 2018-12-12
EP3399543B1 (en) 2021-12-22
CN106935491A (zh) 2017-07-07
KR102080613B1 (ko) 2020-02-24
JP2019507493A (ja) 2019-03-14
TW201729295A (zh) 2017-08-16
KR20180098383A (ko) 2018-09-03

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