CN115602751A - 一种用于红外雪崩探测芯片的激光退火装置及其检测方法 - Google Patents

一种用于红外雪崩探测芯片的激光退火装置及其检测方法 Download PDF

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CN115602751A
CN115602751A CN202211314394.9A CN202211314394A CN115602751A CN 115602751 A CN115602751 A CN 115602751A CN 202211314394 A CN202211314394 A CN 202211314394A CN 115602751 A CN115602751 A CN 115602751A
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infrared avalanche
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徐鹏飞
王岩
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Jiangsu Huaxing Laser Technology Co ltd
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Abstract

本发明公开了一种用于红外雪崩探测芯片的激光退火装置及其检测方法，涉及半导体技术领域，包括激光光源、连续光衰减片、分光镜、透镜、红外雪崩探测芯片、光功率计、电压电流源和计算机；利用激光进行退火可以选择性的对芯片进行局部退火，不影响电极与材料的欧姆接触，同时激光的波长及能量可以调节，可以对不同的吸收层材料进行有选择性的退火；主要针对探测芯片的吸收层材料进行选择性退火，同时选择的激光波长通过衰减至合适范围，可以对探测芯片的光响应性能进行检测，达到对退火效果的监测。

Description

一种用于红外雪崩探测芯片的激光退火装置及其检测方法
技术领域
本发明涉及半导体技术领域，更具体地说，它涉及一种用于红外雪崩探测芯片的激光退火装置及其检测方法。
背景技术
半导体退火是一种常见的优化半导体材料质量的方法，通常的方法是在材料刚生长完后利用高温条件对材料进行一定时间的退火处理用于提升半导体材料的结晶质量。然而当材料已经做成芯片，高温退火就不太合适，因为芯片端已经做好了各种电极，高温处理会影响欧姆接触。
发明内容
针对现有技术存在的不足，本发明的目的在于提供一种用于红外雪崩探测芯片的激光退火装置及其检测方法，可以选择性的对芯片进行局部退火，不影响电极与材料的欧姆接触，通过调节激光的波长及能量，可以对不同的吸收层材料有选择性的退火，同时将选择的激光波长通过衰减至合适范围，可以对探测芯片的光响应性能进行检测，达到对退火效果的监测。
为实现上述目的，本发明提供了如下技术方案：一种用于红外雪崩探测芯片的激光退火装置，包括激光光源、连续光衰减片、分光镜、透镜、红外雪崩探测芯片、光功率计、电压电流源和计算机；
所述激光光源经过连续光衰减片经透镜聚焦照射在所述红外雪崩探测芯片表面，用于对所述红外雪崩探测芯片的吸收层材料进行退火；
所述光功率计用于对激光光源的强度进行监测；
所述连续光衰减片用于将激光强度衰减至所述红外雪崩探测芯片的线性响应范围；
所述电压电流源用于测量所述红外雪崩探测芯片的电压电流曲线；
所述计算机用于采集电压电流曲线，获得所述红外雪崩探测芯片的光响应信息。
作为本发明进一步的方案：所述激光光源的波长为1310nm或1550nm，光谱半高宽范围为0.01nm－10nm，输出最大光功率＞1mW。
作为本发明进一步的方案：所述连续光衰减片为中性衰减片，衰减波长范围处于为300nm－2000nm，衰减倍数在10-6～1内连续可调。
作为本发明进一步的方案：所述分光镜的反射透射比为1：1，波长范围为300nm－2000nm。
作为本发明进一步的方案：所述红外雪崩探测芯片，其吸收层为In0.47Ga0.43As材料，电荷层与倍增层为In0.48Al0.42As材料。
作为本发明进一步的方案：所述光功率计检测波长范围为300nm－2000nm，功率范围为0.01μW－1W。
作为本发明进一步的方案：所述电压电流源电流检测范围为10-15A～10A。
一种利用红外雪崩探测芯片的激光退火装置的检测方法，其特征在于，包括如下步骤：
步骤一：将激光光源经过连续光衰减片并经透镜聚焦照射在所述红外雪崩探测芯片表面，对所述红外雪崩探测芯片的吸收层材料进行退火；
步骤二：利用光功率计对激光光源的强度进行监测；
步骤三：利用连续光衰减片将激光强度衰减至红外雪崩探测芯片的线性响应范围；
步骤四：利用电压电流源测量所述红外雪崩探测芯片的电压电流曲线，并利用计算机采集电压电流曲线，获得红外雪崩探测芯片的光响应信息；
步骤五：通过对比退火前后的光响应信息，可以达到对激光退火效果的监测。
与现有技术相比，本发明具备以下有益效果：利用激光进行退火可以选择性的对芯片进行局部退火，不影响电极与材料的欧姆接触，同时激光的波长及能量可以调节，可以对不同的吸收层材料进行有选择性的退火；主要针对探测芯片的吸收层材料进行选择性退火，同时选择的激光波长通过衰减至合适范围，可以对探测芯片的光响应性能进行检测，达到对退火效果的监测。
附图说明
为了更清楚的说明本发明实施例的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述的附图仅仅是本发明的一些实施例，对于本领域的普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他附图。
图1为一种用于红外雪崩探测芯片的激光退火装置的结构组成示意图；
图2为红外雪崩探测芯片吸收层材料的结构示意图；
图3为一种用于红外雪崩探测芯片的激光退火装置的检测方法的流程图；
图4为电压电流曲线图；
1、激光光源；2、连续光衰减片；3、分光镜；4、透镜；5、红外雪崩探测芯片；6、光功率计；7、电压电流源；8、计算机；9、P－InP层；10、u－InGaAs层；11、InAlAs电荷层；12、InAlAs倍增层；13、InP缓冲层；14、InP缓冲层；15、InP衬底。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整的描述，显然所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明的描述中，需要理解的是，术语“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
参照图1至图4对本发明一种用于红外雪崩探测芯片的激光退火装置及其检测方法实施例做进一步说明。
一种用于红外雪崩探测芯片的激光退火装置，包括激光光源1、连续光衰减片2、分光镜3、透镜4、红外雪崩探测芯片5、光功率计6、电压电流源7和计算机8；所述激光光源1经过连续光衰减片2经透镜4聚焦照射在所述红外雪崩探测芯片5表面，用于对所述红外雪崩探测芯片5的吸收层材料进行退火；所述光功率计6用于对激光光源1的强度进行监测；所述连续光衰减片2用于将激光强度衰减至所述红外雪崩探测芯片5的线性响应范围；所述电压电流源7用于测量所述红外雪崩探测芯片5的电压电流曲线；所述计算机8用于采集电压电流曲线，获得所述红外雪崩探测芯片5的光响应信息。
所述红外雪崩探测芯片5的吸收层材料包括P－InP层9、u－InGaAs层10、InAlAs电荷层11、InAlAs倍增层12、InAlAs缓冲层13、InP缓冲层14和InP衬底15；
优选的，所述激光光源1的波长为1310nm或1550nm，光谱半高宽范围为0.01nm－10nm，输出最大光功率＞1mW。
优选的，所述连续光衰减片2为中性衰减片，衰减波长范围处于为300nm－2000nm，衰减倍数在10-6～1内连续可调。
优选的，所述分光镜3的反射透射比为1：1，波长范围为300nm－2000nm。
优选的，所述红外雪崩探测芯片5，其吸收层为In0.47Ga0.43As材料，电荷层与倍增层为In0.48Al0.42As材料。
优选的，所述光功率计6检测波长范围为300nm－2000nm，功率范围为0.01μW－1W。
优选的，所述电压电流源7电流检测范围为10-15A～10A。
需要说明的是本发明提出的所述用于红外雪崩探测芯片的激光退火装置中，所述计算机包括数据采集与数据处理分析软件。
一种利用红外雪崩探测芯片的激光退火装置的检测方法，包括如下步骤：
步骤一：将激光光源1经过连续光衰减片2并经透镜4聚焦照射在所述红外雪崩探测芯片5表面，对所述红外雪崩探测芯片5的吸收层材料进行退火；
步骤二：利用光功率计6对激光光源1的强度进行监测；
步骤三：利用连续光衰减片2将激光强度衰减至红外雪崩探测芯片5的线性响应范围；
步骤四：利用电压电流源7测量所述红外雪崩探测芯片5的电压电流曲线，并利用计算机8采集电压电流曲线，获得红外雪崩探测芯片5的光响应信息；
步骤五：通过对比退火前后的光响应信息，可以达到对激光退火效果的监测。
以下为激光退火前和激光退火后的击穿电压、光增益和光响应的对比数据信息：
击穿电压(V) 光增益 光响应(A/W)
激光退火前 43.6 7.9 6.3
激光退火后 43.2 10.7 8.6
以上所述仅是本发明的优选实施方式，本发明的保护范围并不仅局限于上述实施例，凡属于本发明思路下的技术方案均属于本发明的保护范围。应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理前提下的若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (8)

1.一种用于红外雪崩探测芯片的激光退火装置，其特征在于，包括激光光源(1)、连续光衰减片(2)、分光镜(3)、透镜(4)、红外雪崩探测芯片(5)、光功率计(6)、电压电流源(7)和计算机(8)；
所述激光光源(1)经过连续光衰减片(2)经透镜(4)聚焦照射在所述红外雪崩探测芯片(5)表面，用于对所述红外雪崩探测芯片(5)的吸收层材料进行退火；
所述光功率计(6)用于对激光光源(1)的强度进行监测；
所述连续光衰减片(2)用于将激光强度衰减至所述红外雪崩探测芯片(5)的线性响应范围；
所述电压电流源(7)用于测量所述红外雪崩探测芯片(5)的电压电流曲线；
所述计算机(8)用于采集电压电流曲线，获得所述红外雪崩探测芯片(5)的光响应信息。
2.根据权利要求1所述的一种用于红外雪崩探测芯片的激光退火装置，其特征在于，所述激光光源(1)的波长为1310nm或1550nm，光谱半高宽范围为0.01nm－10nm，输出最大光功率＞1mW。
3.根据权利要求2所述的一种用于红外雪崩探测芯片的激光退火装置，其特征在于，所述连续光衰减片(2)为中性衰减片，衰减波长范围处于为300nm－2000nm，衰减倍数在10-6～1内连续可调。
4.根据权利要求3所述的一种用于红外雪崩探测芯片的激光退火装置，其特征在于，所述分光镜(3)的反射透射比为1：1，波长范围为300nm－2000nm。
5.根据权利要求4所述的一种用于红外雪崩探测芯片的激光退火装置，其特征在于，所述红外雪崩探测芯片(5)，其吸收层为In0.47Ga0.43As材料，电荷层与倍增层为In0.48Al0.42As材料。
6.根据权利要求5所述的一种用于红外雪崩探测芯片的激光退火装置，其特征在于，所述光功率计(6)检测波长范围为300nm－2000nm，功率范围为0.01μW－1W。
7.根据权利要求6所述的一种用于红外雪崩探测芯片的激光退火装置，其特征在于，所述电压电流源(7)电流检测范围为10-15A～10A。
8.一种利用如权利要求1－7任一项所述的用于红外雪崩探测芯片的激光退火装置的检测方法，其特征在于，包括如下步骤：
步骤一：将激光光源(1)经过连续光衰减片(2)并经透镜(4)聚焦照射在所述红外雪崩探测芯片(5)表面，对所述红外雪崩探测芯片(5)的吸收层材料进行退火；
步骤二：利用光功率计(6)对激光光源(1)的强度进行监测；
步骤三：利用连续光衰减片(2)将激光强度衰减至红外雪崩探测芯片(5)的线性响应范围；
步骤四：利用电压电流源(7)测量所述红外雪崩探测芯片(5)的电压电流曲线，并利用计算机(8)采集电压电流曲线，获得红外雪崩探测芯片(5)的光响应信息；
步骤五：通过对比退火前后的光响应信息，可以达到对激光退火效果的监测。
CN202211314394.9A 2022-10-25 2022-10-25 一种用于红外雪崩探测芯片的激光退火装置及其检测方法 Pending CN115602751A (zh)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060202243A1 (en) * 2005-03-11 2006-09-14 The Boeing Company Metamorphic avalanche photodetector
CN104078339A (zh) * 2013-03-26 2014-10-01 上海微电子装备有限公司 一种激光退火装置和方法
CN106935491A (zh) * 2015-12-30 2017-07-07 上海微电子装备有限公司 一种激光退火装置及其退火方法
CN206422052U (zh) * 2017-02-14 2017-08-18 桂林电子科技大学 红外探测器薄膜激光退火系统
CN107665821A (zh) * 2016-07-29 2018-02-06 上海微电子装备（集团）股份有限公司 一种激光退火装置及方法
CN114614891A (zh) * 2022-03-22 2022-06-10 Nano科技(北京)有限公司 一种雪崩光电探测器光响应度测量系统及测量方法
CN217182204U (zh) * 2022-01-27 2022-08-12 合肥本源量子计算科技有限责任公司 一种用于超导量子芯片的激光退火系统

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060202243A1 (en) * 2005-03-11 2006-09-14 The Boeing Company Metamorphic avalanche photodetector
CN104078339A (zh) * 2013-03-26 2014-10-01 上海微电子装备有限公司 一种激光退火装置和方法
CN106935491A (zh) * 2015-12-30 2017-07-07 上海微电子装备有限公司 一种激光退火装置及其退火方法
CN107665821A (zh) * 2016-07-29 2018-02-06 上海微电子装备（集团）股份有限公司 一种激光退火装置及方法
CN206422052U (zh) * 2017-02-14 2017-08-18 桂林电子科技大学 红外探测器薄膜激光退火系统
CN217182204U (zh) * 2022-01-27 2022-08-12 合肥本源量子计算科技有限责任公司 一种用于超导量子芯片的激光退火系统
CN114614891A (zh) * 2022-03-22 2022-06-10 Nano科技(北京)有限公司 一种雪崩光电探测器光响应度测量系统及测量方法

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