WO2017114424A1 - 一种激光退火装置及其退火方法 - Google Patents

一种激光退火装置及其退火方法 Download PDF

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Publication number
WO2017114424A1
WO2017114424A1 PCT/CN2016/112662 CN2016112662W WO2017114424A1 WO 2017114424 A1 WO2017114424 A1 WO 2017114424A1 CN 2016112662 W CN2016112662 W CN 2016112662W WO 2017114424 A1 WO2017114424 A1 WO 2017114424A1
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Prior art keywords
laser
silicon wafer
annealing
control system
temperature
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PCT/CN2016/112662
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English (en)
French (fr)
Chinese (zh)
Inventor
崔国栋
兰艳平
马明英
宋春峰
孙刚
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Shanghai Micro Electronics Equipment Co Ltd
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Shanghai Micro Electronics Equipment Co Ltd
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Priority to US16/067,353 priority Critical patent/US20190015929A1/en
Priority to JP2018534060A priority patent/JP6831383B2/ja
Priority to KR1020187021712A priority patent/KR102080613B1/ko
Priority to EP16881213.9A priority patent/EP3399543B1/en
Publication of WO2017114424A1 publication Critical patent/WO2017114424A1/zh
Anticipated expiration legal-status Critical
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/034—Observing the temperature of the workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Definitions

  • the invention relates to the field of laser annealing technology, and in particular to a laser annealing device and an annealing method thereof.
  • the ion implantation method is easy to damage the crystallinity of the surface of the silicon substrate, and the ion arrangement is disordered.
  • a laser annealing method is generally used for a semiconductor film formed on an insulating substrate such as glass to achieve crystallization or crystallinity, and the result of laser annealing is to convert an amorphous material into polycrystalline or In the single crystal state, when the ions are implanted, the doped impurities are combined with the ordered arrangement of atoms in the crystal, which effectively improves the electrical properties of the material.
  • FIG. 1 it is a schematic structural view of the surface of a silicon wafer after being processed by a specific photolithography process. It can be seen that the surface of the silicon wafer is composed of a series of bare chips 1' shown by black squares. For the formed bare chip 1', a series of specific periodic structures having different spatial dimensions on the surface of the surface and different material compositions are shown on the surface, as shown in FIG. Therefore, the reflectance R(x, y) of the upper surface of the silicon wafer with respect to incident light differs depending on the position.
  • the reflectance R( ⁇ , ⁇ ) is a function of the wavelength ⁇ of the incident light and the incident angle ⁇ .
  • the reflectivity R ⁇ ( ⁇ ) of the surface of the silicon wafer changes with the incident angle, as shown in Figures 3a and 3b, respectively, at a wavelength of 800 nm and wavelength.
  • the reflectance R( ⁇ , ⁇ , x, y) of the incident light and the surface position of the silicon wafer, the wavelength of the laser used, and the incident angle All related.
  • the existing laser annealing technology uses a laser as an energy source to illuminate the surface of the silicon wafer to be processed, so that the surface of the silicon wafer reaches a predetermined annealing temperature T0 to achieve target annealing.
  • the existing laser annealing technology uses only one wavelength of laser for annealing, which inevitably causes the problem of the surface pattern effect of the silicon wafer, which will have an important influence on the consistency of the device performance, thereby reducing the light of the silicon wafer. Engraved effect and stability.
  • the invention provides a laser annealing device and an annealing method thereof to solve the above technical problems.
  • a laser annealing device for performing laser annealing on a silicon wafer on a stage, comprising:
  • a laser light source system comprising at least two lasers, outputting a laser beam, the power of the laser beam being adjustable;
  • a laser adjustment system coupled to the laser light source system, comprising at least two laser regulators corresponding to the lasers, monitoring the power of the corresponding laser beam and the position of the spot on the surface of the silicon wafer, the shape and angle of incidence of the spot Make adjustments;
  • a temperature monitoring system that measures the temperature at the spot location on the surface of the wafer
  • a central control system is respectively connected to the laser light source system, the laser adjustment system, the temperature monitoring system, and the carrier, and receives data information of the laser light source system, the laser adjustment system, the temperature monitoring system, and the carrier, and the laser
  • the light source system, laser conditioning system and slide table are controlled.
  • a laser light source control system is connected between the central control system and the laser light source system, and the laser light source control system receives a control command of the central control system for the power of the laser beam output by each laser in the laser light source system. Control is performed and the control results are fed back to the central control system.
  • a laser adjustment control system is connected between the central control system and the laser adjustment system, and the laser adjustment control system receives a control command of the central control system to control each laser regulator in the laser adjustment system, and The control results are fed back to the central control system.
  • a slide control system is arranged between the central control system and the slide table, and the slide control system receives a control command of the central control system to control the movement of the slide table, and feedbacks the control result. To the central control system.
  • the temperature monitoring system is a pyrometer or a reflectivity detector.
  • the laser and the laser regulator are connected by an optical fiber.
  • each of the laser regulators includes a spot detection system, an energy attenuation system, a homogenizing system, a rotation and a displacement device arranged along an optical path, the spot detection system being respectively connected to a laser and a central processing system, the rotation and A displacement device is located above the silicon wafer.
  • the spot detection system includes a power meter, a CCD detector, and an image collector.
  • the homogenizing system employs a microlens array or an optical integrator rod.
  • a beam expander collimation system is further disposed between the energy attenuation system and the light homogenizing system.
  • the rotation and displacement device includes an ammeter lens and a piezoelectric ceramic displacement device.
  • an F- ⁇ lens is further disposed between the rotation and displacement device and the silicon wafer.
  • the laser beam output by the at least two lasers includes at least two different wavelengths
  • the invention also provides an annealing method of a laser annealing device, comprising the following steps:
  • S2 determining a spot position in the silicon wafer by a laser adjuster in the laser adjustment system, and selecting an optimal process parameter group according to the reflectance at the spot position;
  • S3 adjusting the laser light source system and the laser adjustment system, exposing the spot position by using the optimal process parameters, and measuring the temperature data at the spot position through the temperature monitoring system, and transmitting the temperature data to the central control system;
  • the central control system determines whether the temperature meets the set temperature range according to the received temperature data; if not, records the exposure temperature at the position, and exposes the next silicon wafer position having the same reflectivity. Adjusting parameters of the laser light source system and the laser adjustment system such that the exposure temperature is within a set range; if satisfied, controlling the slide table to move the silicon wafer relative to the spot to the next exposure position;
  • selecting the optimal process parameter group includes the following steps:
  • step S24 determining whether the exposure temperature meets the set temperature range; if not, selecting the next set of parameter combinations, jumping to step S23, and if so, determining the group of parameter combinations as the optimal process parameter group, moving The wafer is moved to the next position of the wafer, and the process proceeds to step S23 until all the positions on the silicon wafer 1 are traversed.
  • the invention also provides an annealing method of a laser annealing device, comprising the following steps:
  • S2 selecting at least two lasers according to the above process parameters, generating a laser beam, and adjusting an annealing angle and an annealing power of each laser beam;
  • step S1 the process parameters are selected in a parameter model obtained by pre-measuring the silicon wafer surface shape according to the type of the silicon wafer in the annealing process.
  • step S1 the process parameter is obtained by real-time measurement of the surface profile of the silicon wafer during the annealing process.
  • the process parameters include a surface profile of the surface of the silicon wafer and a reflectivity of the material.
  • step S2 at least two laser beams having different wavelengths are selected according to the reflectance of the material, and the power of the laser beam is adjusted.
  • step S2 according to the surface profile of the surface, the incident angle of the laser beam is adjusted by the corresponding laser adjuster to obtain different annealing angles.
  • step S3 the energy distribution of the annealed spot matches the surface profile of the surface of the silicon wafer and the reflectance of the material.
  • the invention provides a laser annealing device and an annealing method thereof.
  • a laser annealing device By providing a plurality of independent lasers, providing lasers with different wavelengths, performing joint annealing on the silicon wafer, and annealing the silicon wafer by selecting an optimal process parameter set, Complementing lasers of different wavelengths not only achieves the best annealing temperature, but also suppresses the image effect on the surface of the silicon wafer.
  • the uniformity of annealing is improved by the feedback mechanism of the temperature monitoring system and the adjustment mechanism of the central control system. Controllability reduces thermal budget, reduces thermal diffusion, and improves process adaptability of the annealing unit.
  • FIG. 1 is a schematic structural view of a surface of a prior art silicon wafer
  • FIG. 2 is a schematic view showing the internal structure of a prior art silicon wafer
  • 3a and 3b are graphs showing the reflectance of a laser having a wavelength of 800 nm and a wavelength of 500 nm incident on the four materials A, B, C, and D of FIG. 2 as a function of an incident angle;
  • Figure 4 is a schematic structural view of a laser annealing apparatus of the present invention.
  • Figure 5 is a schematic structural view of a laser regulator of the present invention.
  • Figure 6 is a schematic view of a spot formed by three different lasers incident on the surface of the silicon wafer
  • Figure 7 is a graph showing the temperature difference obtained by annealing different process parameter sets formed by lasers of two wavelengths of 500 nm and 800 nm.
  • Figure 1 shows: 1', bare chip
  • Figure 4-8 shows: 1, silicon wafer; 2, slide table; 3, laser light source system; 31, laser; 4, laser adjustment system; 41, laser regulator; 411, spot detection system; Attenuation system; 413, homogenizing system; 414, rotation and displacement device; 415, beam expanding collimation system; 416, F-theta lens; 5, temperature monitoring system; 6, central control system; 7, optical fiber; Light source control system; 9, laser adjustment control system; 10, slide table control system.
  • the present invention provides a laser annealing apparatus for laser annealing the silicon wafer 1 on the stage 2, comprising:
  • the laser light source system 3 includes at least two lasers 31, and outputs a laser beam, which is annealed on the surface of the silicon wafer 1.
  • the power of the laser beam is adjustable, and the laser wavelength of each laser 31 is different, and each The power of the laser 31 can be independently adjusted.
  • a laser adjusting system 4 connected to the laser light source system 3, and located above the silicon wafer 1, comprising at least two laser adjusters 41 corresponding to the laser 31, that is, the number of the laser adjusters 41 It is the same as the number of the lasers 31.
  • Each of the laser adjusters 41 is for monitoring the power of the laser beam emitted from the corresponding laser 31 and the position of the spot of the laser beam on the surface of the silicon wafer 1, and adjusting the shape and angle of incidence of the spot.
  • the laser conditioning system 4 and the laser light source system 3 are connected by an optical fiber 7 for conducting a laser beam.
  • the temperature monitoring system 5 is located above the silicon wafer 1 to measure the temperature at the spot position on the surface of the silicon wafer in real time; preferably, the temperature monitoring system 5 uses a pyrometer or a reflectivity detector to realize the silicon wafer at the position of the spot. The temperature of the surface is measured in real time, and the temperature data measured in real time is fed back to the central control system 6 as a basis for feedback control.
  • Fig. 4 only the temperature monitoring system 5 is schematically illustrated, mainly for explaining the connection relationship between the temperature monitoring system 5 and other components, such as the central control system 6, and is not used to reflect the temperature monitoring system 5 in the entire device. Actual position, therefore, it should not be construed restrictively that the temperature monitoring system 5 is placed at the position shown in FIG.
  • the central control system 6 is respectively connected to the laser light source system 3, the laser adjustment system 4, the temperature monitoring system 5, and the stage 2, and receives the laser light source system 3, the laser adjustment system 4, the temperature monitoring system 5, and the slide.
  • the data information of the stage 2 is controlled by the laser light source system 3, the laser adjustment system 4, and the stage 2.
  • the central control system 6 processes the temperature data measured by the temperature monitoring system 5, it is fed back to the two control degrees of freedom of the power and incident angle of the laser beam in the laser source system 3 and the laser adjustment system 4 in real time, so that During the annealing process, the temperature of the surface of the silicon wafer at the spot position is kept within the set temperature range.
  • the set temperature range is T 0 ⁇ T, where T 0 is the surface of the silicon wafer at the spot position.
  • the target annealing temperature, ⁇ T is an acceptable temperature difference.
  • each of the laser conditioners 41 includes a spot detection system 411, an energy attenuation system 412, a homogenizing system 413, and a rotation and displacement device 414 arranged along the optical path, the spot detection system 411 and the laser 31, respectively. It is connected to the central processing system 6, including a power meter, a CCD detector, and an image collector for real-time monitoring of the power and spot position of the laser beam and transmitting the data to the central control system 6.
  • the energy attenuation system 412 is composed of a polarization beam splitting prism and an attenuating plate or a wave plate.
  • the energy of the laser beam incident on the surface of the silicon wafer is adjusted by changing the transmittance or polarization direction of the lens; the light homogenizing system 413 is adopted.
  • a microlens array or optical integrator rod for causing a spot incident on the surface of the silicon wafer to have a specific intensity distribution the rotation and displacement device 414 comprising an ammeter lens and a piezoelectric ceramic displacement device, located above the silicon wafer 1, By rotating and translating, the angle of incidence of the laser beam incident on the surface of the wafer is changed and the position of the spot relative to the surface of the wafer is changed.
  • a beam expansion collimation system 415 is further disposed between the energy attenuation system 412 and the homogenization system 413.
  • the single beam or telescope system can be used to collimate the laser beam and irradiate the silicon wafer.
  • the spot shape of the surface is adjusted.
  • the rotation and displacement device 414 and the silicon wafer 1 are further provided with an F-theta lens 416, so that the laser beam forms a spot with a certain energy distribution on the surface of the silicon wafer.
  • FIG. 6 a schematic diagram of a spot formed by injecting three different lasers 31 onto the surface of the silicon wafer.
  • the shape of the spot has a linear distribution, that is, scanning The direction is narrower and longer in the non-scanning direction.
  • the plurality of spots output by the laser adjustment system may be coincident in space or partially coincident.
  • the light intensity energy satisfies a certain distribution in the scanning direction, and the light intensity energy is uniformly distributed in the non-scanning direction.
  • a laser light source control system 8 is connected between the central control system 6 and the laser light source system 3, and receives a control command from the central control system 6 to output laser light to each laser 31 in the laser light source system 3.
  • the power of the beam is controlled to meet specified power requirements and the control results are fed back to the central control system 6, while each laser 31 in the laser source system 3 can pass the wavelength and power of the current laser beam through the laser source control system 8.
  • the information is sent to the central control system 6.
  • a laser adjustment control system 9 is connected between the central control system 6 and the laser adjustment system 4, and a control command of the central control system 6 is received for each laser regulator 41 in the laser adjustment system 4.
  • the control is such that the laser beam output thereof satisfies the requirements of the specified incident angle and shape, and the control result is fed back to the central control system 6.
  • the central control system 6 and the stage 2 are provided with a stage control system 10, which receives the control command of the central control system 6 to control the movement of the stage 2, and feeds back the control result to the center.
  • Control system 6 the stage 2 includes at least a motion table that moves freely in a horizontal plane, and can drive the silicon wafer 1 to move relative to the spot, so that the spot is annealed to each surface of the silicon wafer, and of course, the silicon wafer 1 is required to be laser.
  • the invention also provides an annealing method of a laser annealing device, comprising the following steps:
  • S1 The silicon wafer 1 is placed on the stage 2 to complete the horizontal adjustment of the wafer 1 even if the silicon wafer 1 is in a horizontal state.
  • S2 determining the spot position Spot(x, y) in the silicon wafer 1 according to the position of the laser adjuster 41 in the laser adjusting system 4, and selecting the optimum process according to the reflectance R(x, y) at the spot position.
  • Parameter group among them The intensity of the laser light when the laser light 31 corresponding to the Nth wavelength ⁇ N is incident at ⁇ N ; specifically, according to the relative position of the rotation and displacement device 414 and the silicon wafer 1 in the laser adjuster 41, spot illumination can be obtained to the silicon The position of the surface of the sheet.
  • Selecting the optimal process parameter group specifically includes the following steps:
  • the laser light source system 3 and the laser adjustment system 4 are respectively adjusted by the laser light source control system 8 and the laser adjustment control system 9, and the spot position is exposed by using the optimal process parameters, and the temperature at the spot position is measured by the temperature monitoring system 5 Data and send the temperature data to the central control system 6;
  • the central control system 6 determines, according to the received temperature data, whether the temperature satisfies the set temperature range T 0 ⁇ ⁇ T; if not, records the exposure temperature T(x, y) at the position, and has the next one
  • the central control system 6 adjusts the laser light source system 3 by the laser light source control system 8 according to the exposure temperature T(x, y), and adjusts the parameters of the laser adjustment system 4 by the laser adjustment control system 9,
  • the power and angle of incidence of the laser beam are included such that the exposure temperature at the location is within a set range; if satisfied, the central control system 6 controls the stage 2 to move the wafer 1 relative to the spot by the stage control system 10. To the next exposure position;
  • annealing is performed using nearly 4500 sets of process parameters, and the temperature difference ⁇ T obtained with the change of process parameters, the maximum value of temperature difference ⁇ T is reached.
  • the minimum value is 110 ° C, which proves that the annealing method used herein is an effective and feasible method for suppressing the pattern effect.
  • the invention also provides an annealing method of a laser annealing device, comprising the following steps:
  • S1 setting the silicon wafer 1 to the wafer stage 2 to obtain process parameters of the surface of the silicon wafer 1; the process parameters include the surface distribution of the surface of the silicon wafer and the reflectivity of the material.
  • the process parameters may be selected from a parameter model obtained by pre-measuring the silicon wafer surface shape according to the type of the silicon wafer 1 in the annealing process, or may be obtained by the surface of the silicon wafer during the annealing process. Type real-time measurement is obtained.
  • S2 selecting at least two lasers 31 to provide laser beams according to the above process parameters, adjusting different annealing angles by the laser adjusting system 4, and adjusting the laser light source system 3 to provide different annealing powers; specifically, reflecting according to the above materials Rate, select at least 2 laser beams with different wavelengths, and adjust the laser beam power.
  • the angle of incidence of the laser beam is adjusted by the rotation and displacement means 414 in the laser adjuster 41 to obtain different annealing angles.
  • the present invention provides a laser annealing apparatus and an annealing method thereof.
  • a laser annealing apparatus By providing a plurality of independent lasers 31, lasers of different wavelengths are provided, and the silicon wafer 1 is subjected to joint annealing, and the optimum process parameters are selected.
  • the group anneals the silicon wafer 1 and complements the laser beams of different wavelengths, not only achieving the optimum annealing temperature, but also suppressing the pattern effect on the surface of the silicon wafer; the feedback mechanism of the temperature monitoring system 5 and the central control system 6
  • the adjustment mechanism improves the uniformity and controllability of the annealing, reduces the thermal budget, reduces thermal diffusion, and improves the process adaptability of the annealing device.

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KR1020187021712A KR102080613B1 (ko) 2015-12-30 2016-12-28 레이저 어닐링 장치 및 그 어닐링 방법
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EP3399543A4 (en) 2018-12-12
EP3399543B1 (en) 2021-12-22
CN106935491A (zh) 2017-07-07
KR102080613B1 (ko) 2020-02-24
JP2019507493A (ja) 2019-03-14
TW201729295A (zh) 2017-08-16
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