CN106887430A - Nand闪存的形成方法 - Google Patents
Nand闪存的形成方法 Download PDFInfo
- Publication number
- CN106887430A CN106887430A CN201510919128.2A CN201510919128A CN106887430A CN 106887430 A CN106887430 A CN 106887430A CN 201510919128 A CN201510919128 A CN 201510919128A CN 106887430 A CN106887430 A CN 106887430A
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- Prior art keywords
- layer
- medium layer
- solid state
- flash memory
- nand flash
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Abstract
一种NAND闪存的形成方法,包括:提供半导体衬底,半导体衬底包括核心区和外围区;在核心区上形成多个相互分立的栅极叠层结构,相邻栅极叠层结构之间为凹槽;在凹槽中填充第一介质层;在第一介质层和栅极叠层结构表面形成可流动介质层;对可流动介质层固化处理,以形成固态介质层;在固态介质层表面上形成停止层;在停止层上和外围区形成第二介质层;进行平坦化处理,直至停止在停止层;回刻蚀剩余停止层、固态介质层和第一介质层,以暴露至少部分栅极叠层结构;在被暴露的栅极叠层结构、第一介质层和固态介质层上沉积金属硅化物。所述形成方法能够降低所形成NAND闪存中,字线间的漏电风险,提高工艺窗口。
Description
技术领域
本发明涉及半导体制造领域,尤其涉及一种NAND闪存的形成方法。
背景技术
NAND闪存是一种比硬盘驱动器更好的存储方案,由于NAND闪存以页为单位读写数据,所以适合于存储连续的数据,如图片、音频或其他文件数据;同时因其成本低、容量大且写入速度快、擦除时间短的优点在移动通讯装置及便携式多媒体装置的存储领域得到广泛的应用。
现有NAND闪存形成方法形成的NAND闪存中,字线之间存在高漏电风险。
发明内容
本发明解决的问题是提供一种NAND闪存的形成方法,以降低所形成NAND闪存中,字线间的漏电风险,并提高工艺窗口。
为解决上述问题,本发明提供一种NAND闪存的形成方法,包括:
提供半导体衬底,所述半导体衬底包括核心区和外围区;
在所述核心区上形成多个相互分立的栅极叠层结构,相邻所述栅极叠层结构之间为凹槽;
在所述凹槽中填充第一介质层;
在所述第一介质层和所述栅极叠层结构表面形成可流动介质层;
对所述可流动介质层固化处理,以形成固态介质层;
在所述固态介质层表面上形成停止层;
在所述停止层上和所述外围区形成第二介质层;
进行平坦化处理,直至停止在所述停止层;
回刻蚀剩余所述停止层、所述固态介质层和所述第一介质层,以暴露至少部分所述栅极叠层结构;
在被暴露的所述栅极叠层结构、所述第一介质层和所述固态介质层上沉积金属硅化物。
可选的,所述可流动介质层的材料为可流动聚合物,所述固态介质层的材料为氧化硅,采用流体化学气相沉积方法形成所述可流动聚合物和所述氧化硅。
可选的,所述流体化学气相沉积法包括:
沉积步骤,利用氧化硅前驱体发生自由基聚合反应,以产生所述可流动聚合物;
转变步骤,采用臭氧蒸汽将所述可流动聚合物氧化成所述氧化硅。
可选的,所述臭氧蒸汽在100℃~200℃的温度条件下对所述可流动聚合物进行氧化。
可选的,采用干法刻蚀方法进行所述回刻蚀,并且所述回刻蚀暴露至少部分所述控制栅极的侧面。
可选的,所述金属硅化物为镍金属硅化物、钨金属硅化物、钼金属硅化物、钛金属硅化物、钴金属硅化物或者铊金属硅化物。
可选的,所述回刻蚀采用的反应气体包括氟化碳。
可选的,采用高深宽比化学气相沉积方法或者高密度等离子体化学气相沉积方法形成所述第一介质层,所述凹槽的深宽比在10:1以上。
可选的,在形成所述停止层前,还包括在所述栅极叠层结构上形成掩膜层;在回刻蚀所述剩余所述停止层和所述第一介质层时,同时回刻蚀所述掩膜层。
可选的,所述可流动介质层为氧化石墨烯或者氧化石墨。
与现有技术相比,本发明的技术方案具有以下优点:
本发明的技术方案中,在形成位于栅极叠层结构之间的第一介质层后,在第一介质层上形成可流动介质层,从而使可流动介质层填充第一介质层表面打开的小孔和缝隙,然后对可流动介质层进行固化处理,从而使可流动介质层固化为固态介质层。此时,在后续的回刻蚀步骤中,不会出现第一介质层表面具有小孔和缝隙的现象,从而避免在形成金属硅化物的过程中,部分金属硅化物残留在第一介质层中的现象,从而提高第一介质层的介电作用,降低字线之间的漏电风险。
并且,由于能够防止字线之间的介质层具有金属硅化物,因此,回刻蚀步骤时不必严格控制刻蚀量,因而,所述方法还能够提高回刻蚀步骤的工艺窗口,从而提高整个工艺的工艺窗口。
附图说明
图1至图5为现有NAND闪存的形成方法各步骤对应结构示意图;
图6至图11为本发明实施例提供的NAND闪存的形成方法各步骤对应结构示意图。
具体实施方式
正如背景技术所述,现有方法形成的NAND闪存中,字线之间存在高漏电风险。经分析,上述高漏电风险的原因可以从图1至图4所示的形成过程得到解释。
请参考图1,提供半导体衬底100,半导体衬底100包括核心区(未标注)和外围区(未标注)。需要说明的是,图1至图5中显示的是所述核心区的其中一部分,而所述外围区未示出。
请继续参考图1,在所述核心区上形成多个相互分立的栅极叠层结构(未标注),所述栅极叠层结构可以包括隧穿氧化层101、浮栅层103、栅介质层105和控制栅层107。同时,在所述栅极叠层结构上还形成有掩膜层109。相邻所述栅极叠层结构之间为凹槽102,并在所述栅极叠层结构的侧壁形成侧墙111,侧墙111覆盖所述凹槽102的底部和侧壁。
然后,请参考图2,在凹槽102中填充第一介质层113。并在第一介质层113和掩膜层109表面形成停止层115(事实上停止层115同时形成在侧墙111顶部表面)。
此后,在停止层115上和图中未显示的所述外围区形成第二介质层(所述第二介质层图中同样未显示,所述第二介质层主要是为了形成在所述外围区中,因此后续需要去除位于核心区的所述第二介质层),然后进行平坦化,以去除位于停止层115上的所述第二介质层,所述平坦化步骤停止在停止层115,这个过程去除了位于所述核心区的所述第二介质层。
请参考图3,回刻蚀剩余停止层115、掩膜层109和第一介质层113,以暴露至少部分所述栅极叠层结构,图2显示被暴露的所述栅极叠层结构为控制栅层107,控制栅层107的顶部和部分侧面在回刻蚀后被暴露出来。
请结合参考图4和图5,形成金属硅化物117覆盖被暴露出来的控制栅层107的顶部和部分侧面,并覆盖第一介质层113。然后,去除图4中位于第一介质层113上的金属硅化物117,而仅保留位于控制栅层107上的金属硅化物117,这部分金属硅化物117作为字线119,如图5所示。
然而,在形成上述第一介质层113时,第一介质层113时中会出现各种小孔(void)1131和缝隙(seam)1132,如图2所示。在图3所示回刻蚀过程中,位于第一介质层113顶部的小孔1131和缝隙1132在刻蚀后暴露出来。当在图3显示的形成金属硅化物117过程中,金属硅化物117在覆盖第一介质层113时,还会同时填充在小孔1131和缝隙1132,并分别在小孔1131和缝隙1132内形成第一金属硅化物1171和第二金属硅化物1172,如图4所示。而在图5所示去除第一介质层113上的金属硅化物117时,这些填充在小孔1131和缝隙1132中的第一金属硅化物1171和第二金属硅化物1172却很难被去除,因此它们会残留在第一介质层113中,导致第一介质层113的绝缘性能下降,造成字线119间具有高漏电风险。
并且,由于第一介质层113上具有小孔1131和缝隙1132,因此,在上述回刻蚀步骤中,如果刻蚀量过多,会打开小孔和缝隙,后续清洗过程中的酸处理会进一步扩大小孔和缝隙,导致更多的金属硅化物进入小孔和缝隙,引起第一介质层113的K值变化,使得介电作用下降;如果刻蚀量过少,则会导致控制栅极暴露量不足,进而导致栅极上的金属硅化物量不足,NAND闪存是通过这些金属硅化物导电的,而金属硅化物量不足会引起其性能下降。因此,现有工艺需要严格地控制回刻蚀的刻蚀量,使得回刻蚀步骤的工艺窗口(process window)较小。
需要特别说明的是,在形成停止层115时,由于停止层115一般是采用氮化物制作,其填充性较差,填不进小孔1131和缝隙1132。而即使小部分填进小孔1131和缝隙1132,由于停止层115的材料K值与第一介质层113的K值差异较大,也会引起第一介质层113电性的劣化。而在金属硅化物117形成前,必须对前面的结构进行清洁,以确保金属硅化物117与控制栅层107充分接触。而这个清洁步骤会把小孔1131和缝隙1132扩大,导致金属硅化物117更加容易填入小孔1131和缝隙1132,并且金属硅化物117形成过程中的退火工艺,也造成金属硅化物117更加容易填入小孔1131和缝隙1132。
为此,本发明提供一种新的NAND闪存的形成方法,所述形成方法在回刻蚀后的所述第一介质层和所述栅极叠层结构表面形成可流动介质层,然后对所述可流动介质层进行固化处理,以形成固态介质层,后续在固态介质层和第一介质层上沉积金属硅化物。通过在回刻蚀后的第一介质层表面形成可流动介质层,能够使可流动介质层填充满第一介质层顶部相应的小孔和缝隙,并且后续对可流动介质层进行固化处理,小孔和缝隙里面具有固态介质层。在一些情况下第一介质层上方仍然具有固态介质层,另一些情况下固态介质层仅填充在第一介质层顶部的小孔和缝隙中。当在固态介质层和第一介质层上形成金属硅化物时,由于小孔和缝隙已经被固态介质层填充,因而不会出现金属硅化物残留在第一介质层的情况。固态介质层由可流动介质层固化而成,因此其内部不会出现小孔和缝隙,因此也不会出现金属硅化物残留在固态介质层中的现象。所述方法提高了字线间介质层(所述介质层包括第一介质层和固态介质层)的介电作用,降低了字线间发生漏电的风险。
为使本发明的上述目的、特征和优点能够更为明显易懂,下面结合附图对本发明的具体实施例做详细的说明。
一种半导体结构的形成方法,请结合参考图6至图10。
请参考图6,提供半导体衬底200,半导体衬底200包括核心区(未标注)和外围区(未标注)。需要说明的是,图6至图10中显示的是所述核心区的其中一部分,而所述外围区未示出。
本实施例中,半导体衬底200可以为硅衬底、锗衬底或者绝缘体上硅衬底等。半导体衬底200还可以是其它半导体材料的衬底,例如砷化镓等Ⅲ-Ⅴ族化合物衬底。其它实施例中,本领域的技术人员可以根据需要选择半导体衬底200类型,因此半导体衬底200类型不应限制本发明的保护范围。
本实施例中,所述核心区用于形成快闪存储器的核心存储电路,所述外围区用于形成快闪存储器的外围存储电路。
请继续参考图6,在所述核心区上形成多个相互分立的栅极叠层结构(未标注),相邻所述栅极叠层结构之间为凹槽202。
本实施例中,所述栅极叠层结构从下到上可以包括隧穿氧化层201、浮栅(Floating Gate,FG)层203、栅介质层和控制栅(Control Gate,CG)层207。所述栅介质层可以为ONO层205。控制栅层207的材料可以为多晶硅,并且可以使用化学气相沉积方法形成控制栅层207。
本实施例中,凹槽202的深宽比(深度大小和宽度大小的比值)在10:1以上。当凹槽202的深宽比在10:1以上时,无论采用何种现有沉积方法(例如本实施例后续采用的高深宽比HARP化学气相沉积方法和高密度等离子体化学气相沉积方法),都不可避免地会在所填充的介质层中产生小孔和缝隙等缺陷(小孔和缝隙并无太大区别,一般的,小孔的宽度通常大于缝隙,缝隙的深度通长大于小孔)等缺陷,而这些缺陷会进一步导致后续工艺中出现各种不利情况。
请继续参考图6,在所述栅极叠层结构上形成掩膜层209,图6显示了所述栅极叠层结构上所具有的掩膜层209。掩膜层209的材料可以为氮化硅,或者为氧化硅和氮化硅的叠层结构。可以使用化学气相沉积方法形成掩膜层209。在其他实施例中,掩膜层209的材料还可为其他为本领域技术人员所熟知的材料。
本实施中,掩膜层209用于所述核心区中所述栅极叠层结构的形成过程,具体过程可以为:在所述核心区和所述外围区形成掩膜材料层,对所述掩膜材料层进行图形化,图形化后,位于所述核心区的剩余掩膜材料层作为图6中所示的掩膜层209。掩膜层209用于定义所述核心区的所述栅极叠层结构。此外,在图中未显示的外围区也可以具有掩膜层,所述掩模层用于定义外围区的栅极称叠层结构。对不同区的各栅极叠层结构的定义方法可以包括:在所述掩膜材料层上形成光刻胶层(未示出),图形化所述光刻胶层,再以图形化的所述光刻胶层为掩模,刻蚀位于所述核心区的所述掩膜材料层,至暴露控制栅层207,此时实现了对掩膜层209进行图形化的目的,然后去除剩余的所述光刻胶层,再以所述核心区的掩膜层209为掩模,刻蚀控制栅层207、ONO层205、浮栅层203和隧穿氧化层201。从而获得在所述核心区形成隧穿氧化层201,位于隧穿氧化层201上的浮栅层203,位于浮栅层203上的ONO层205,位于ONO层205上的控制栅层207,以及位于控制栅层207上的剩余掩膜层209。
需要说明的是,其它实施例中,也可以不在所述栅极叠层结构上形成掩膜层,而采用其它方法形成相应的栅极叠层结构。
请继续参考图6,在所述栅极叠层结构的侧壁形成侧墙211,侧墙211覆盖凹槽202的底部和侧壁,侧墙211同时覆盖在掩膜层209侧面。
请参考图7,在凹槽202中填充第一介质层213。
本实施例中,第一介质层213的材料可以为氧化硅。第一介质层213可以采用高深宽比化学气相沉积方法(High Aspect Ratio Process-Chemical VaporDeposition,HARP-CVD)或者高密度等离子体化学气相沉积方法(High DensityPlasma-Chemical Vapor Deposition,HDP-CVD)形成第一介质层213。通常,采用HDP-CVD所沉积的介质层会具有压应力,采用HARP-CVD所沉积的介质层会具有张应力。但是,无论采用这两种方法的任何一种,由于凹槽202的深宽比在10:1以上,因此,所形成的第一介质层213会存在小孔或者缝隙等缺陷,如图7显示出第一介质层213中具有小孔2131和缝隙2132。
请参考图8,在第一介质层213和掩膜层209表面形成可流动介质层,所述流动介质层同时形成在侧墙211顶部表面,并对所述可流动介质层进行固化处理,以形成固态介质层215,即固态介质层215为固化处理后的所述可流动介质层。
本实施例中,由于在具有小孔2131和缝隙2132的第一介质层213上形成了所述可流动介质层,因此,所述可流动介质层会流入小孔2131和缝隙2132内,并且在所述固化处理后,注入小孔2131和缝隙2132的所述可流动介质层固化为固态介质2151和固态介质2152,固态介质2151和固态介质2152为固态介质层215的一部分。
其它实施例中,当未形成掩膜层209时,则在第一介质层213和掩膜层209和所述栅极叠层结构表面。
本实施例中,所述可流动介质层的材料为可流动聚合物,固态介质层215的材料可以为氧化硅,并且采用流体化学气相沉积方法形成所述可流动聚合物和所述氧化硅。此时,所述流体化学气相沉积法包括:沉积步骤,利用氧化硅前驱体发生自由基聚合反应,以产生所述可流动聚合物;转变步骤,采用臭氧蒸汽将所述可流动聚合物氧化成所述氧化硅。
在所述沉积步骤中,可以采用例如氧化硅前驱体和氨的等离子体反应,形成所述可流动聚合物,从而填充小孔2131和缝隙2132。所述可流动聚合物的厚度通过相应的工艺时间确定。
在所述转变步骤中,所述臭氧蒸汽在200℃~200℃的温度条件下对所述可流动聚合物进行氧化。在200℃~200℃的温度条件下,臭氧蒸汽对可流动聚合物的氧化均匀稳定。从而使所述可流动聚合物形成固态二氧化硅,即固态介质层215。
本实施例中,固态介质层215的厚度控制在以上,以便固态介质2151和固态介质2152充分填充小孔2131和缝隙2132,并且满足后续工艺要求,特别是后续回刻蚀步骤的工艺要求。
需要特别说明的是,其它实施例中,所述可流动介质层为氧化石墨烯(graphene oxide)或者氧化石墨(graphite oxide),即可以“将氧化石墨烯作为可流动介质层,并填充在小孔2131和缝隙2132”,此时相应的所述固态介质层215为固化处理后的氧化石墨烯或者氧化石墨。
上述“将氧化石墨烯作为可流动介质层,并填充在小孔2131和缝隙2132”的一种具体做法可以为:先在图7所示结构表面(所述表面包括第一介质层213、掩膜层209和侧墙211顶部各方面)进行等离子处理,所述等离子处理可以采用氮气作为等离子体的反应气体源;在所述等离子处理后,在所述结构表面上形成铜层,所述铜层可以采用溅射方法形成,所述铜层填充在小孔2131和缝隙2132;然后,可以采用化学气相沉积法在所述铜层上形成氧化石墨烯层;之后,可以在所述氧化石墨烯层上形成聚甲基丙烯酸甲酯(polymethylmethacrylate,PMMA),PMMA用于保护所述氧化石墨烯层;此后,可以采用湿式刻蚀法去除所述铜层,此时,小孔2131和缝隙2132内的铜被去除,从而重新暴露,并且在去除铜层后,所述氧化石墨烯层会代替原来的铜层而沉积至所述结构表面上,并且所述氧化石墨烯层会填充被重新暴露的小孔2131和缝隙2132,此时可以去除PMMA;最后,可以通过烘烤工艺对所述氧化石墨烯层进行固化处理。
其中,从天然一种从天然石墨制作氧化石墨烯的方法可以包括以下步骤:在80℃的温度条件下,将天然石墨、浓硫酸、K2S2O8和P2O5混合在一起4个小时;上述混合物冷却至室温,用去离子水稀释,并静置12小时;对上述静置混合物进行离心分离,并用去离子水冲洗,得到预氧化石墨;在冰水浴中,采用浓硫酸和KMnO4对上述预氧化石墨进行2小时的再氧化;用去离子水稀释上述再氧化后的混合物,并在冰水浴中放置2小时,然后再次用去离子水稀释,然后在混合物中加入H2O2以进一步进行氧化;对H2O2氧化后的混合物进行离心分离,并且盐酸和去离子水进行冲洗,得到具有水溶性且具有优良可流动性的氧化石墨烯。因此,上述步骤形成的所述氧化石墨烯运可以用于作为所述可流动介质层。
请继续参考图8,在固态介质层215表面上形成停止层217。
图中虽未显示,但在形成停止层217后,本实施例继续在停止层217上和所述外围区形成第二介质层(所述第二介质层图中同样未显示,所述第二介质层主要是为了形成在所述外围区中,因此后续需要去除位于核心区的所述第二介质层),然后进行平坦化处理,直至以去除位于停止层217上的所述第二介质层,并停止在停止层217,这个过程去除了位于所述核心区的所述第二介质层。
本实施例中,所述平坦化可以采用化学机械研磨(CMP)方法进行。
请参考图9,回刻蚀剩余停止层217、掩膜层209、固态介质层215和第一介质层213,以暴露至少部分所述栅极叠层结构,图9显示被暴露的所述栅极叠层结构为控制栅层207,控制栅层207的顶部和部分侧面在回刻蚀后被暴露出来。
本实施例中,采用干法刻蚀方法进行所述回刻蚀,并且所述回刻蚀暴露至少部分所述控制栅层207的侧面。所述回刻蚀采用的反应气体包括氟化碳。
需要说明的是,在一些情况下第一介质层213上方仍然具有固态介质层215,另一些情况下固态介质层215仅填充在第一介质层213顶部的小孔2131和缝隙2132中,即在图9所示情况下,固态介质层215仅保留固态介质2151和固态介质2152。
需要说明的是,本实施例中,如图9所示,回刻蚀将位于第一介质层213上的固态介质层215全部去除,但保留填充在原来小孔2131和缝隙2132中的固态介质2151和固态介质2152,前面所述固态介质层215厚度选择保证了此回刻蚀步骤的实现。
本实施例中,由于前面形成有掩膜层209,因此在回刻蚀所述剩余停止层217和所述第一介质层213时,同时回刻蚀掩膜层209。其它实施例中,当未形成掩膜层209时,也可以不必刻蚀掩膜层209。
请参考图10,在被暴露的所述栅极叠层结构、所述第一介质层213和固态介质层215上沉积金属硅化物219。
需要说明的是,在形成金属硅化物219之前,通常会对前述步骤形成的结构进行清洁(清洗)。
具体的,形成金属硅化物219覆盖上述回刻蚀步骤后暴露的结构表面,即包括控制栅层207的顶部表面和部分侧面,第一介质层213和固态介质层215各方面。金属硅化物219的形成过程包括快速热退火等步骤,在此不再赘述。
本实施例中,所述金属硅化物219可以为镍金属硅化物、钨金属硅化物、钼金属硅化物、钛金属硅化物、钴金属硅化物或者铊金属硅化物。
请参考图11,去除位于固态介质层215和第一介质层213上的金属硅化物219,而仅保留位于控制栅层207上的金属硅化物219,这部分金属硅化物219作为字线221。
本实施例中,去除固态介质层215和第一介质层213上的金属硅化物219可以采用湿法刻蚀方法进行。由于本实施例前面已经形成固态介质2151和固态介质2152填充相应的小孔2131和缝隙2132,因此,固态介质层215和第一介质层213上的金属硅化物219能够被完全选择性去除,而不会残留在固态介质层215或第一介质层213中。
本实施例所提供的形成方法中,在回刻蚀后的所述第一介质层213和所述栅极叠层结构表面形成可流动介质层,然后对所述可流动介质层进行固化处理,以形成固态介质层215,后续在固态介质层215和第一介质层213上沉积金属硅化物219。通过在回刻蚀后的第一介质层213表面形成可流动介质层,能够使可流动介质层填充满第一介质层213顶部相应的小孔2131和缝隙2132,并且后续对可流动介质层进行固化处理,从而使小孔2131和缝隙2132分别被固态介质2151和固态介质2152。当在固态介质层215和第一介质层213上形成金属硅化物219时,由于小孔2131和缝隙2132已经被固态介质层215的剩余部分(即固态介质2151和固态介质2152)填充,因而不会出现金属硅化物219残留在第一介质层213的情况。固态介质层215由可流动介质层固化而成,因此固态介质层215内部不会出现小孔和缝隙,因此也不会出现金属硅化物219残留在固态介质层215中的现象。所述方法提高了字线221之间介质层(所述介质层包括第一介质层213和固态介质层215)的介电作用,降低了字线221之间发生漏电的风险。
此外,本实施例所提供的形成方法中,由于能够防止字线221之间的介质层具有金属硅化物,因此,不必严格地控制回刻蚀的刻蚀量,因此还能够提高本实施例所述回刻蚀步骤的工艺窗口,从而提高整个NAND闪存形成工艺的工艺窗口。
虽然本发明披露如上,但本发明并非限定于此。任何本领域技术人员,在不脱离本发明的精神和范围内,均可作各种更动与修改,因此本发明的保护范围应当以权利要求所限定的范围为准。
Claims (10)
1.一种NAND闪存的形成方法,其特征在于,包括:
提供半导体衬底,所述半导体衬底包括核心区和外围区;
在所述核心区上形成多个相互分立的栅极叠层结构,相邻所述栅极叠层结构之间为凹槽;
在所述凹槽中填充第一介质层;
在所述第一介质层和所述栅极叠层结构表面形成可流动介质层;
对所述可流动介质层固化处理,以形成固态介质层;
在所述固态介质层表面上形成停止层;
在所述停止层上和所述外围区形成第二介质层;
进行平坦化处理,直至停止在所述停止层;
回刻蚀剩余所述停止层、所述固态介质层和所述第一介质层,以暴露至少部分所述栅极叠层结构;
在被暴露的所述栅极叠层结构、所述第一介质层和所述固态介质层上沉积金属硅化物。
2.如权利要求1所述的NAND闪存的形成方法,其特征在于,所述可流动介质层的材料为可流动聚合物,所述固态介质层的材料为氧化硅,采用流体化学气相沉积方法形成所述可流动聚合物和所述氧化硅。
3.如权利要求2所述的NAND闪存的形成方法,其特征在于,所述流体化学气相沉积法包括:
沉积步骤,利用氧化硅前驱体发生自由基聚合反应,以产生所述可流动聚合物;
转变步骤,采用臭氧蒸汽将所述可流动聚合物氧化成所述氧化硅。
4.如权利要求3所述的NAND闪存的形成方法,其特征在于,所述臭氧蒸汽在100℃~200℃的温度条件下对所述可流动聚合物进行氧化。
5.如权利要求1所述的NAND闪存的形成方法,其特征在于,采用干法刻蚀方法进行所述回刻蚀,并且所述回刻蚀暴露至少部分所述控制栅极的侧面。
6.如权利要求1所述的NAND闪存的形成方法,其特征在于,所述回刻蚀采用的反应气体包括氟化碳。
7.如权利要求1所述的NAND闪存的形成方法,其特征在于,所述金属硅化物为镍金属硅化物、钨金属硅化物、钼金属硅化物、钛金属硅化物、钴金属硅化物或者铊金属硅化物。
8.如权利要求1所述的NAND闪存的形成方法,其特征在于,采用高深宽比化学气相沉积方法或者高密度等离子体化学气相沉积方法形成所述第一介质层,所述凹槽的深宽比在10:1以上。
9.如权利要求1所述的NAND闪存的形成方法,其特征在于,在形成所述停止层前,还包括在所述栅极叠层结构上形成掩膜层;在回刻蚀所述剩余所述停止层和所述第一介质层时,同时回刻蚀所述掩膜层。
10.如权利要求1所述的NAND闪存的形成方法,其特征在于,所述可流动介质层为氧化石墨烯或者氧化石墨。
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