CN106876337B - Nldmos集成器件及其制备方法 - Google Patents
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Abstract
本发明属于半导体集成电路技术领域，具体涉及一种NLDMOS集成器件及其制备方法。其括：P型单晶硅衬底，其内部形成有第一N阱区、第二N阱区和P阱区；P型单晶硅衬底上设置有若干NLDMOS集成器件单元，包括NLDMOS单元、NMOS单元和PMOS单元；NLDMOS单元、NMOS单元和PMOS单元均包括设置在衬底上的栅氧化层和场氧化层；NLDMOS单元包括源极、漏极、接地极和栅极，NMOS单元和PMOS单元包括源极、漏极和栅极。上述NLDMOS集成器件，直接在CMOS工艺中集成，其做在CMOS所用的普通P型单晶硅衬底上，不需外延层，大大降低了成本，进一步扩展其应用范围。
Description
技术领域
本发明属于半导体集成电路技术领域，具体涉及一种NLDMOS集成器件及其制备方法。
背景技术
CMOS(Complementary Metal Oxide Semiconductor)即互补金属氧化物半导体，由PMOS管和NMOS管共同构成，其特点是低功耗，采用CMOS技术可以将成对的金属氧化物半导体场效应晶体管(MOSFET)集成在一块硅片上。LDMOS(Laterally Diffused Metal OxideSemiconductor横向扩散金属氧化物半导体)器件具有增益高、耐压高、输出功率大、热稳定性好、效率高、宽带匹配性能好等优点，而且易于和CMOS工艺集成，是一种非常具有竞争力的功率器件，目前在电源管理电路中被广泛采用。
在LDMOS器件中，导通电阻是一个重要的指标。而为了提高击穿电压和减小导通电阻，一般采用在外延层上制作漂移区或是使用其他方式；但制作外延层的成本非常高，而采用其他方式时增加了不少工艺步骤，也会直接提高了制造成本，在一定程度上限制了其应用。
发明内容
本发明的目的克服现有技术的上述不足，提供一种基于CMOS工艺的NLDMOS集成器件及其制备方法，以解决现有NLDMOS器件成本高、使用受限的问题。
为实现上述发明目的，本发明采用的技术方案如下：
本发明一方面提供一种NLDMOS集成器件，所述NLDMOS集成器件基于CMOS工艺形成，包括：
P型单晶硅衬底，所述P型单晶硅衬底内部形成有第一N阱区、第二N阱区和P阱区；
所述P型单晶硅衬底上设置有若干NLDMOS集成器件单元，所述NLDMOS集成器件单元包括NLDMOS单元、NMOS单元和PMOS单元；
所述NLDMOS单元设置在所述第二N阱区和P阱区，所述NMOS单元设置在所述P阱区，所述PMOS单元设置在所述第一N阱区；
所述NLDMOS单元、NMOS单元和PMOS单元均包括设置在所述P型单晶硅衬底上的栅氧化层和场氧化层；
所述NLDMOS单元包括源极、漏极、接地极和栅极，且在所述NLDMOS单元中，所述栅极覆盖所述栅氧化层并延伸到所述场氧化层上，所述NMOS单元和PMOS单元均包括源极、漏极和栅极。
本发明提供的NLDMOS集成器件，直接在CMOS工艺中集成，其做在CMOS所用的普通P型单晶硅衬底上，而第二N阱区为NLDMOS单元的漂移区，P阱区即是NLDMOS单元的体区，同时是NMOS单元的P阱区，整个NLDMOS集成器件不需外延层，大大降低了其成本，进一步扩展其应用范围。
本发明另一方面，提供一种上述NLDMOS集成器件的制备方法。所述方法包括如下步骤：
提供P型单晶硅衬底；
在所述P型单晶硅衬底上依次形成第一N阱区、第二N阱区和P阱区；
形成OD区和P-field区，在所述P型单晶硅衬底上生长场氧化层和栅氧化层，并在所述栅氧化层上形成NMOS栅极、PMOS栅极和NLDMOS栅极，并形成图案化的N+区和P+区；
在所述N+区和P+区挖孔形成接触通孔，在所述接触通孔内溅镀金属层，形成引线和打线窗口。
本发明提供的NLDMOS集成器件制备方法，直接将NLDMOS做在CMOS所用的普通P型单晶硅衬底上，不需外延层；除了增加必需的N型漂移区所需的相关工艺步骤外，NLDMOS器件所需的其他部分(如栅极，源极，漏极等等)都是在形成CMOS器件和电路的所需相关步骤中同时完成，没再增加其他工艺步骤，直接节省了生产成本。
附图说明
图1是本发明实施例提供的NLDMOS器件的完整结构图；
图2是本发明实施例提供的NLDMOS器件结构形成阶段示意图-至NW，NW-2，PW的形成；
图3是本发明实施例提供的NLDMOS器件的制备方法工艺流程图；
图中附图说明如下：
P-SUB：即P型单晶硅衬底；
NW：即第一N阱区，为PMOS的N阱区；
NW-2：即第二N阱区，为NLDMOS的漂移区；
PW：即P阱区，为NLDMOS的体区，同时为NMOS的P阱区；
P-field：即P-field区，P场；
P+：位于PW上的P+是NLDMOS接地极；位于NW上的P+是PMOS源极区和PMOS漏极；
N+：与PW上的P+相邻的N+是NLDMOS源极，位于与NW相邻的PW上的P+是NMOS源极和NMOS漏极；位于NW-2上的N+是NLDMOS漏极；
FOX：场氧化层；
Poly：栅极，从左至右依次为NLDMOS栅极、NMOS栅极和PMOS栅极。
具体实施方式
为了使本发明要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合附图和实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
本发明实施例中，提供一种NLDMOS集成器件。该NLDMOS集成器件基于CMOS工艺形成，如图1所示，具体包括如下：
P型单晶硅衬底(P-SUB)，其内部形成有第一N阱区(NW)、第二N阱区(NW-2)和P阱区(PW)；
P型单晶硅衬底(P-SUB)上设置有若干NLDMOS集成器件单元，该NLDMOS集成器件单元包括NLDMOS单元、NMOS单元和PMOS单元；
NLDMOS单元设置在第二N阱区(NW-2)和P阱区(PW)，NMOS单元设置在P阱区(PW)，PMOS单元设置在第一N阱区(NW)；
NLDMOS单元、NMOS单元和PMOS单元均包括设置在P型单晶硅衬底上(P-SUB)的栅氧化层(GOX，图未示)和场氧化层(FOX)；NLDMOS单元包括源极、漏极、接地极和栅极，且在NLDMOS单元中栅极覆盖栅氧化层并延伸到相邻的所述场氧化层上，NMOS单元和PMOS单元包括源极、漏极和栅极。
上述NLDMOS集成器件，直接在CMOS工艺中集成，其做在CMOS所用的普通P型单晶硅衬底上，不需外延层，大大降低了成本，进一步扩展其应用范围。
具体地，本发明实施例提供的NLDMOS集成器件中P型单晶硅衬底(P-SUB)的电阻率为：5～50欧姆·厘米。在该优选的电阻率材料条件下，可使该NLDMOS集成器件的性能达到最优。
具体地，本发明实施例提供的NLDMOS集成器件中第二N阱区(NW-2)掺杂注入剂量：2E12～5E12的磷P31。因漂移区的离子浓度直接影响到击穿电压，离子浓度越淡，击穿电压会越高，但同时开态电阻Rdson会越大，所以需要根据实际需求选择合适注入剂量；在本发明实施例中优选注入剂量范围内，可将击穿电压做到100V以上。
具体地，本发明实施例提供的NLDMOS集成器件中NLDMOS单元的沟道长度为：5～10μm。沟道长度即指P阱区(PW)上方NLDMOS栅极覆盖栅氧化层的长度。因一部分NLDMOS栅极跨在场氧化层(FOX)上方形成导电场板，该导电场板将大大减弱漏区附近的电场强度，提高了击穿电压。在本发明实施例中优选沟道长度范围内，击穿电压提高性能达到最优。
另一方面，本发明实施例还提供一种上述NLDMOS集成器件的制备方法。如图3所示，该制备方法包括如下步骤：
S01：提供P型单晶硅衬底；
S02：在上述P型单晶硅衬底上依次形成第一N阱区、第二N阱区和P阱区；
S03：形成OD区和P-field区，在P型单晶硅衬底上生长场氧化层和栅氧化层，并在栅氧化层上形成NMOS栅极、PMOS栅极和NLDMOS栅极，并形成图案化的N+区和P+区；
S04：在N+区和P+区挖孔形成接触通孔，在接触通孔内溅镀金属层，形成引线和打线窗口。
本发明提供的NLDMOS集成器件制备方法，直接将NLDMOS做在CMOS所用的普通P型单晶硅衬底上，不需外延层；除了增加必需的N型漂移区所需的相关工艺步骤外，NLDMOS集成器件所需的其他部分(如栅极，源极，漏极等等)都是在形成CMOS器件和电路的所需相关步骤中同时完成，没再增加其他工艺步骤，直接节省了生产成本。
具体地，在上述步骤S02中，第一N阱区形成过程为：在P型单晶硅衬底上沉积垫氧化层和氮化硅层，利用光刻、蚀刻技术定义第一N阱区作为PMOS的N阱区，并对该N阱区进行离子注入掺杂。通过该过程，可形成PMOS的N阱区。
具体地，在上述步骤S02中，第二N阱区形成过程为：去除定义第一N阱区时的光阻，利用光刻、蚀刻技术定义出第二N阱区作为NLDMOS的漂移区，并对该漂移区离子注入掺杂。通过该过程，可形成NLDMOS的N型漂移区。
具体地，在上述步骤S02中，P阱区形成过程为：将形成的第一N阱区和第二N阱区退火处理，并去除氮化硅层；整面做P阱区的离子注入掺杂。通过该过程，可形成NMOS和NLDMOS的P阱区。
具体地，在上述步骤S03和S04之间，场氧化层生长完成后，先生长一层牺牲氧化层，然后去掉牺牲氧化层(Sacrifice oxide，定义为SAC oxide)，再生长栅氧化层；此过程保证了栅氧化层的质量，消除掉硅底材表面的缺陷。
具体地，本发明实施例提供的上述NLDMOS器件的制备方法，其除所述第二N阱区形成之外，其他所有步骤与CMOS工艺同时进行。NLDMOS器件所需的其他部分(如栅极，源极，漏极等等)都是在形成CMOS器件和电路的所需相关步骤中同时完成，没再增加其他工艺步骤，直接节省了生产成本。
实施例
如图1所示，一种NLDMOS集成器件。该NLDMOS集成器件基于CMOS工艺形成，具体包括：P型单晶硅衬底(P-SUB)，其内部形成有第一N阱区(NW)、第二N阱区(NW-2)和P阱区(PW)；P型单晶硅衬底(P-SUB)上设置有若干NLDMOS集成器件单元，该NLDMOS集成器件单元包括NLDMOS单元、NMOS单元和PMOS单元；NLDMOS单元设置在第二N阱区(NW-2)和P阱区(PW)，NMOS单元设置在P阱区(PW)，PMOS单元设置在第一N阱区(NW)；NLDMOS单元、NMOS单元和PMOS单元均包括设置在P型单晶硅衬底上(P-SUB)的栅氧化层(GOX，图未示)和场氧化层(FOX)；NLDMOS单元包括源极、漏极、接地极和栅极，且在NLDMOS单元中栅极覆盖栅氧化层并延伸到场氧化层上，NMOS单元和PMOS单元包括源极、漏极和栅极。
上述NLDMOS集成器件的制备方法如下：
S11：提供P型单晶硅衬底(P-SUB)。使用常规CMOS工艺生产的晶圆，其电阻率为5～50欧姆·厘米。
S12：在上述P型单晶硅衬底(P-SUB)上依次形成第一N阱区(NW)、第二N阱区(NW-2)和P阱区(PW)，如图2所示。
第一N阱区(NW)形成过程：在上述P型单晶硅衬底(P-SUB)沉积垫氧化层和氮化硅层，利用光刻、蚀刻技术定义出NW区；离子注入NW区所需的掺杂，形成PMOS的NW；
第二N阱区(NW-2)形成过程：去除上步定义NW图形时所用光阻，再利用光刻、蚀刻技术定义出NW-2区，形成NLDMOS的N型漂移区，离子注入NW-2区所需的掺杂，掺杂的具体条件(如注入剂量等)可根据实际需求来确定，本实施例注入2E12～5E12的磷P31。
P阱区(PW)形成过程：对NW，NW-2做退火处理，然后去除掉氮化硅层。因其他区域有氮化硅覆盖，二氧化硅生长不出来，NW和NW-2区域会生长出氧化层，作为后续遮挡PW注入的遮挡层。不用光罩定义，整面做PW区的离子注入，因NW和NW-2区域有厚的氧化层阻挡，这两块区域不会有P型离子注入进去，所以此处可以省一次光刻的同时实现PW的自对准离子注入；形成NMOS和NLDMOS的P阱区。
S13：形成OD区和P-field区，在P型单晶硅衬底(P-SUB)上生长场氧化层(FOX)和栅氧化层(GOX，图未示)，并在栅氧化层(GOX)上形成NMOS栅极、PMOS栅极和NLDMOS栅极，并形成图案化的N+区和P+区。
先对NW、NW-2和PW做退火处理，将掺杂推至所需的深度；利用光刻、蚀刻工艺定义出OD区域；利用光刻工艺定义出P-field区域，离子注入P-field区所需的掺杂；同NW-2后面的二氧化硅生长一样，OD区域有氮化硅覆盖，非OD区域生长出FOX；为保证栅氧的质量，先生长一层薄的SAC oxide，以消除掉硅底材表面的一些缺陷，然后去除掉。在衬底材料整面做VT的离子注入，调节阈值电压；并沉积poly(Poly silicon，多晶硅)，利用光刻、蚀刻工艺定义和形成NMOS栅极、PMOS栅极和NLDMOS栅极。
利用光刻技术定义出NLDD，离子注入NLDD区所需的掺杂；沉积一层二氧化硅，因Poly与旁边的区域存在高低差，整面回蚀后会在Poly两侧形成一定宽度的侧墙；再利用光刻工艺定义出N+区域，离子注入N+区所需的掺杂；最后，形成NMOS和NLDMOS的源、漏极；利用光刻工艺定义出P+区域，离子注入P+区所需的掺杂，形成PMOS的源、漏极。
S14：在N+区和P+区挖孔形成接触通孔，在接触通孔内溅镀金属层，形成引线和打线窗口。
沉积介电层，做一次平坦化，利用光刻和蚀刻工艺定义和形成接触通孔，然后再做一次回流，进一步平坦化；溅镀金属，利用光刻和蚀刻工艺定义和形成引线；利用等离子化学气相淀积(PECVD)工艺，在上述金属层上方形成保护膜层，以阻挡外界机械损伤，以及水汽等对器件的影响。利用常规光刻工艺、刻蚀工艺，去除栅极和源极(发射极)区域上方的钝化层，形成封装键合打线的引线孔窗口。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。
Claims (2)
1.一种NLDMOS集成器件的制备方法，其特征在于，包括如下步骤：
提供P型单晶硅衬底；
在所述P型单晶硅衬底上依次形成第一N阱区、第二N阱区和P阱区；其中，所述第一N阱区形成过程为：在所述P型单晶硅衬底上沉积垫氧化层和氮化硅层，利用光刻、蚀刻技术定义所述第一N阱区作为PMOS单元的N阱区，并对所述N阱区进行离子注入掺杂；所述第二N阱区形成过程为：去除定义所述第一N阱区时的光阻，利用光刻、蚀刻技术定义出所述第二N阱区作为NLDMOS单元的漂移区，并对所述漂移区进行离子注入掺杂，掺杂注入剂量为2E12～5E12的磷；所述P阱区形成过程为：将形成的所述第一N阱区和第二N阱区退火处理，并去除所述第一N阱区和第二N阱区上的所述氮化硅层，整面做所述P阱区的离子注入掺杂，且所述第一N阱区和第二N阱区的区域在去除其上形成的所述氮化硅层后，生长有二氧化硅，从而未有P型离子注入进去；
形成OD区和P-field区，在所述P型单晶硅衬底上生长场氧化层和栅氧化层，并在所述栅氧化层上形成NMOS栅极、PMOS栅极和NLDMOS栅极，并形成图案化的N+区和P+区；
在所述N+区和P+区挖孔形成接触通孔，在所述接触通孔内溅镀金属层，形成引线和打线窗口。
2.如权利要求1所述的NLDMOS集成器件的制备方法，其特征在于，所述场氧化层形成后，先生长一层牺牲氧化层，然后去掉所述牺牲氧化层，再生长所述栅氧化层。
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