CN106830925A - 通过素坯破碎过筛提高ito粉末松装密度和振实密度的方法 - Google Patents

通过素坯破碎过筛提高ito粉末松装密度和振实密度的方法 Download PDF

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CN106830925A
CN106830925A CN201611184944.4A CN201611184944A CN106830925A CN 106830925 A CN106830925 A CN 106830925A CN 201611184944 A CN201611184944 A CN 201611184944A CN 106830925 A CN106830925 A CN 106830925A
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density
ito powder
ito
powder
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CN106830925B (zh
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张红梅
马建保
方煕成
张淑琴
徐军伟
左宁伟
周帆
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Ningxia medium color new materials Co., Ltd.
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XIBEI INST OF RARE METAL MATERIAL
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    • CCHEMISTRY; METALLURGY
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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Abstract

一种通过素坯破碎过筛提高ITO粉末松装密度和振实密度的方法,属于粉末冶金技术领域。将已制成的ITO粉末进行模具压制成素坯后,对素坯破碎过筛混合,以达到快速提高粉末松装密度和振实密度的目的,处理后的ITO粉末完全满足目前制备高密度ITO烧结体之需要。此方法处理得到的ITO粉完全适用并有利于模压和等静压制成素坯,在压制过程中将有效减少ITO素坯断裂、掉边等情况,提高ITO靶材成品率和密度。

Description

通过素坯破碎过筛提高ITO粉末松装密度和振实密度的方法
技术领域
本发明属于粉末冶金技术领域,特别涉及一种通过素坯破碎过筛提高ITO粉末松装密度和振实密度的方法。
背景技术
掺锡氧化铟(IndiumTinOxide),一般简称为ITO, ITO薄膜是一种n型半导体材料,具有高的导电率、高的可见光透过率、高的机械硬度和良好的化学稳定性,因此,它是液晶显示器(LCD)、等离子显示器(PDP)、电致发光显示器(EL/OLED)、触摸屏(TouchPanel)、太阳能电池以及其他电子仪表的透明电极最常用的薄膜材料,ITO靶材是制备ITO导电薄膜的原料,目前ITO靶的生产主要通过烧结法制备。
ITO粉是制备ITO靶材的原料,ITO粉末经过处理、压制或模铸、等静压制成素坯,烧结最终得到ITO靶材。
ITO粉末的松装密度和振实密度直接影响后续的压制工艺,如松装密度过小将导致压制的素坯强度不足,或掉边掉角现象严重,进而影响到最终的靶材质量,在目前已公开的技术中,处理的ITO粉末松装密度和振实密度无法有效提高或存在其它问题,中国专利申请CN104148159A公开了一种利用球磨机精确控制一次粉松装密度的方法,但此方法较为复杂,辅助设备和工序较多,生产成本高,不利于规模化生产。
发明内容
本发明的目的是针对现有的利用球磨机控制一次粉松装密度方法的不足之处,提供一种通过素坯破碎过筛提高ITO粉末松装密度和振实密度的方法。
为实现上述目的,本发明的技术方案为:一种通过素坯破碎过筛提高ITO粉末松装密度和振实密度的方法,将已制成的ITO粉末模具压制成素坯后,对素坯破碎过筛混合,以达到快速提高粉末松装密度和振实密度的目的,处理后的ITO粉末完全满足目前制备高密度ITO烧结体之需要。
该方法的具体步骤如下:
1. 定量称取ITO粉末装入模压机中压制。
2.将压制的素坯放入破碎机中破碎,过筛40目。
3.混合一段时间后,取样测定ITO粉末松装密度和振实密度。
本发明的优点是:
通过此发明制造出的ITO粉末,其松装密度和振实密度均有明显提高,此方法处理得到的ITO粉完全适用并有利于模压和等静压制成素坯,在压制过程中将有效减少ITO素坯断裂、掉边等情况,提高ITO靶材成品率和密度,完全满足目前制备高密度ITO烧结体之需要,且设备和工序简单,易于操作。
具体实施方式
本发明的具体实施方式通过实施例做进一步说明。
实施例1:通过素坯破碎过筛,提高铟锡比例(In2O3 : SnO2) wt%=90:10的ITO粉末的松装密度和振实密度,具体步骤为:
1.原始ITO粉末松装密度为0.8 g/cm3,振实密度为1.2 g/cm3
2.取ITO粉末3kg装入模压机中压制。
3.将压制的素坯放入破碎机中破碎,过筛40目。
4.混合一段时间后,检测ITO粉末松装密度为1.2g/cm3,振实密度1.59g/cm3
实施例2:通过素坯破碎过筛,提高铟锡比例(In2O3 : SnO2) wt%=90:10的ITO粉末的松装密度和振实密度,具体步骤为:
1.原始ITO粉末松装密度为1.5 g/cm3,振实密度为1.75 g/cm3
2.取ITO粉末3kg装入模压机中压制。
3.将压制的素坯放入破碎机中破碎,过筛40目。
4.混合一段时间后,检测ITO粉末松装密度为1.85g/cm3,振实密度2.11 g/cm3

Claims (2)

1.一种通过素坯破碎过筛提高ITO粉末松装密度和振实密度的方法,其特征在于,将已制成的ITO粉末模具压制成素坯后,对素坯破碎过筛混合,以达到快速提高粉末松装密度和振实密度的目的,该方法的具体步骤如下:(1)定量称取ITO粉末装入模压机中压制;(2)将压制的素坯放入破碎机中破碎,过筛40目;(3)混合一段时间后,取样测定ITO粉末松装密度和振实密度。
2.根据权利要求1所述的通过素坯破碎过筛提高ITO粉末松装密度和振实密度的方法,其特征在于所述的通过素坯破碎过筛,提高铟锡比例为(In2O3 : SnO2) wt%=90:10的ITO粉末的松装密度和振实密度具体步骤为:(1)原始ITO粉末松装密度为0.8g/cm3~1.5g/cm3,振实密度为1.2g/cm3~1.75 g/cm3;(2)取一定量ITO粉末装入模压机中压制;(3)将压制的素坯放入破碎机中破碎,过筛40目;(4)混合一段时间后,检测ITO粉末松装密度为1.2g/cm3~1.85g/cm3,振实密度1.59g/cm3~2.11g/cm3
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107443543A (zh) * 2017-08-17 2017-12-08 中国船舶重工集团公司第七二五研究所 一种ito旋转靶的冷等静压成型及制备方法
CN108913927A (zh) * 2018-08-02 2018-11-30 株洲佳邦难熔金属股份有限公司 热沉用钼铜合金的原料混合方法、制备工艺及产品
CN110256049A (zh) * 2019-08-05 2019-09-20 先导薄膜材料有限公司 一种ito粉末的制备方法

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Publication number Priority date Publication date Assignee Title
JP5199023B2 (ja) * 2008-10-24 2013-05-15 三井金属鉱業株式会社 酸化スズ粉末
CN103693646A (zh) * 2013-12-23 2014-04-02 湖南大学 一种使碳化硅微粉球形化和纯化的方法
CN106082993A (zh) * 2016-06-08 2016-11-09 中国船舶重工集团公司第七二五研究所 一种制备高性能ito造粒粉的方法

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JP5199023B2 (ja) * 2008-10-24 2013-05-15 三井金属鉱業株式会社 酸化スズ粉末
CN103693646A (zh) * 2013-12-23 2014-04-02 湖南大学 一种使碳化硅微粉球形化和纯化的方法
CN106082993A (zh) * 2016-06-08 2016-11-09 中国船舶重工集团公司第七二五研究所 一种制备高性能ito造粒粉的方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107443543A (zh) * 2017-08-17 2017-12-08 中国船舶重工集团公司第七二五研究所 一种ito旋转靶的冷等静压成型及制备方法
CN108913927A (zh) * 2018-08-02 2018-11-30 株洲佳邦难熔金属股份有限公司 热沉用钼铜合金的原料混合方法、制备工艺及产品
CN108913927B (zh) * 2018-08-02 2020-06-16 株洲佳邦难熔金属股份有限公司 热沉用钼铜合金的原料混合方法、制备工艺及产品
CN110256049A (zh) * 2019-08-05 2019-09-20 先导薄膜材料有限公司 一种ito粉末的制备方法

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