CN106783855A - 半导体存储器件及其制作方法 - Google Patents
半导体存储器件及其制作方法 Download PDFInfo
- Publication number
- CN106783855A CN106783855A CN201710198532.4A CN201710198532A CN106783855A CN 106783855 A CN106783855 A CN 106783855A CN 201710198532 A CN201710198532 A CN 201710198532A CN 106783855 A CN106783855 A CN 106783855A
- Authority
- CN
- China
- Prior art keywords
- breach
- insulating barrier
- bit line
- wordline
- storage unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000003860 storage Methods 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims abstract description 85
- 239000004020 conductor Substances 0.000 claims abstract description 37
- 239000003990 capacitor Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 11
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 32
- 238000003491 array Methods 0.000 claims description 12
- 239000013047 polymeric layer Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 239000011810 insulating material Substances 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 6
- 230000005012 migration Effects 0.000 claims description 6
- 238000013508 migration Methods 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 238000000992 sputter etching Methods 0.000 claims description 4
- 238000005253 cladding Methods 0.000 claims description 2
- 238000003701 mechanical milling Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000011799 hole material Substances 0.000 claims 11
- 230000005611 electricity Effects 0.000 claims 1
- 238000012856 packing Methods 0.000 abstract description 9
- 238000001259 photo etching Methods 0.000 abstract description 4
- 238000001020 plasma etching Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710198532.4A CN106783855B (zh) | 2017-03-29 | 2017-03-29 | 半导体存储器件及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710198532.4A CN106783855B (zh) | 2017-03-29 | 2017-03-29 | 半导体存储器件及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106783855A true CN106783855A (zh) | 2017-05-31 |
CN106783855B CN106783855B (zh) | 2018-03-02 |
Family
ID=58967990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710198532.4A Active CN106783855B (zh) | 2017-03-29 | 2017-03-29 | 半导体存储器件及其制作方法 |
Country Status (1)
Country | Link |
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CN (1) | CN106783855B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107994018A (zh) * | 2017-12-27 | 2018-05-04 | 睿力集成电路有限公司 | 半导体存储器件结构及其制作方法 |
CN111508958A (zh) * | 2019-01-25 | 2020-08-07 | 美光科技公司 | 包括数位线触点的半导体装置及相关系统和方法 |
CN113540213A (zh) * | 2020-04-17 | 2021-10-22 | 长鑫存储技术有限公司 | 有源区、有源区阵列及其形成方法 |
CN114188282A (zh) * | 2020-09-14 | 2022-03-15 | 长鑫存储技术有限公司 | 半导体器件及其制备方法 |
WO2023130526A1 (zh) * | 2022-01-07 | 2023-07-13 | 长鑫存储技术有限公司 | 一种半导体结构以及版图 |
WO2024040642A1 (zh) * | 2022-08-23 | 2024-02-29 | 长鑫存储技术有限公司 | 半导体结构及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6163047A (en) * | 1999-07-12 | 2000-12-19 | Vanguard International Semiconductor Corp. | Method of fabricating a self aligned contact for a capacitor over bitline, (COB), memory cell |
US20120217631A1 (en) * | 2009-05-11 | 2012-08-30 | Samsung Electronics Co., Ltd. | Integrated circuit devices including air spacers separating conductive structures and contact plugs and methods of fabricating the same |
US20130292847A1 (en) * | 2012-05-03 | 2013-11-07 | Byoungdeog Choi | Semiconductor Devices and Methods of Manufacturing the Same |
CN104900584A (zh) * | 2014-03-05 | 2015-09-09 | 爱思开海力士有限公司 | 具有线型气隙的半导体器件及其制造方法 |
-
2017
- 2017-03-29 CN CN201710198532.4A patent/CN106783855B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6163047A (en) * | 1999-07-12 | 2000-12-19 | Vanguard International Semiconductor Corp. | Method of fabricating a self aligned contact for a capacitor over bitline, (COB), memory cell |
US20120217631A1 (en) * | 2009-05-11 | 2012-08-30 | Samsung Electronics Co., Ltd. | Integrated circuit devices including air spacers separating conductive structures and contact plugs and methods of fabricating the same |
US20130292847A1 (en) * | 2012-05-03 | 2013-11-07 | Byoungdeog Choi | Semiconductor Devices and Methods of Manufacturing the Same |
CN104900584A (zh) * | 2014-03-05 | 2015-09-09 | 爱思开海力士有限公司 | 具有线型气隙的半导体器件及其制造方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107994018A (zh) * | 2017-12-27 | 2018-05-04 | 睿力集成电路有限公司 | 半导体存储器件结构及其制作方法 |
CN107994018B (zh) * | 2017-12-27 | 2024-03-29 | 长鑫存储技术有限公司 | 半导体存储器件结构及其制作方法 |
CN111508958A (zh) * | 2019-01-25 | 2020-08-07 | 美光科技公司 | 包括数位线触点的半导体装置及相关系统和方法 |
CN111508958B (zh) * | 2019-01-25 | 2023-05-02 | 美光科技公司 | 包括数位线触点的半导体装置及相关系统和方法 |
CN113540213A (zh) * | 2020-04-17 | 2021-10-22 | 长鑫存储技术有限公司 | 有源区、有源区阵列及其形成方法 |
CN114188282A (zh) * | 2020-09-14 | 2022-03-15 | 长鑫存储技术有限公司 | 半导体器件及其制备方法 |
CN114188282B (zh) * | 2020-09-14 | 2022-10-28 | 长鑫存储技术有限公司 | 半导体器件及其制备方法 |
WO2023130526A1 (zh) * | 2022-01-07 | 2023-07-13 | 长鑫存储技术有限公司 | 一种半导体结构以及版图 |
WO2024040642A1 (zh) * | 2022-08-23 | 2024-02-29 | 长鑫存储技术有限公司 | 半导体结构及其制造方法 |
Also Published As
Publication number | Publication date |
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CN106783855B (zh) | 2018-03-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: 230000 Anhui city of Hefei Province Economic and Technological Development Zone Cuiwei Road No. 6 Haiheng building room 526 Applicant after: Ever power integrated circuit Co Ltd Address before: 230000 Anhui city of Hefei province Cuiwei Hefei City Economic and Technological Development Zone No. 6 Haiheng building room 526 Applicant before: Hefei wisdom integrated circuit Co., Ltd. |
|
CB02 | Change of applicant information | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181010 Address after: 230601 room 630, Hai Heng mansion 6, Cui Wei Road, Hefei economic and Technological Development Zone, Anhui Patentee after: Changxin Storage Technology Co., Ltd. Address before: 230000 room 526, Hai Heng mansion 6, Cui Wei Road, Hefei economic and Technological Development Zone, Anhui Patentee before: Ever power integrated circuit Co Ltd |
|
TR01 | Transfer of patent right |