CN106783714B - 沉积装置及沉积方法 - Google Patents

沉积装置及沉积方法 Download PDF

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Publication number
CN106783714B
CN106783714B CN201610261222.8A CN201610261222A CN106783714B CN 106783714 B CN106783714 B CN 106783714B CN 201610261222 A CN201610261222 A CN 201610261222A CN 106783714 B CN106783714 B CN 106783714B
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substrate
stretching
electrostatic chuck
mask
portions
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CN106783714A (zh
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李炳哲
金盛来
西口昌男
车裕敏
郑成镐
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
CN201610261222.8A 2015-11-25 2016-04-25 沉积装置及沉积方法 Active CN106783714B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2015-0165648 2015-11-25
KR1020150165648A KR102490641B1 (ko) 2015-11-25 2015-11-25 증착 장치 및 증착 방법

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CN106783714A CN106783714A (zh) 2017-05-31
CN106783714B true CN106783714B (zh) 2022-04-05

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Families Citing this family (26)

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KR101952521B1 (ko) * 2017-10-31 2019-02-26 캐논 톡키 가부시키가이샤 성막장치, 성막방법, 및 전자 디바이스 제조방법
KR101944197B1 (ko) * 2017-11-29 2019-01-30 캐논 톡키 가부시키가이샤 성막장치, 성막방법 및 이를 사용한 유기 el 표시 장치의 제조방법
KR101960194B1 (ko) * 2017-11-29 2019-03-19 캐논 톡키 가부시키가이샤 성막장치, 성막방법, 및 유기 el 표시장치의 제조방법
KR102008581B1 (ko) * 2017-11-29 2019-08-07 캐논 톡키 가부시키가이샤 성막장치, 성막방법, 및 유기 el 표시장치의 제조방법
KR101993532B1 (ko) * 2017-11-29 2019-06-26 캐논 톡키 가부시키가이샤 성막장치, 성막방법, 및 전자 디바이스 제조방법
KR101954539B1 (ko) * 2017-11-29 2019-03-05 캐논 톡키 가부시키가이샤 성막장치, 성막방법 및 이를 사용한 유기 el 표시장치의 제조방법
KR101933807B1 (ko) * 2017-11-29 2018-12-28 캐논 톡키 가부시키가이샤 성막장치 및 이를 사용한 유기 el 표시장치의 제조방법
KR102443437B1 (ko) * 2017-12-20 2022-09-16 주식회사 선익시스템 기판 얼라인 장치 및 이를 포함하는 증착장치
KR102010158B1 (ko) * 2017-12-26 2019-08-12 캐논 톡키 가부시키가이샤 성막장치, 성막방법 및 이를 사용한 유기 el 표시 장치의 제조방법
KR101963982B1 (ko) * 2017-12-27 2019-03-29 캐논 톡키 가부시키가이샤 성막 장치, 성막 방법, 및 전자 디바이스의 제조 방법
KR102427823B1 (ko) * 2018-06-11 2022-07-29 캐논 톡키 가부시키가이샤 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
KR102405438B1 (ko) * 2018-06-25 2022-06-03 캐논 톡키 가부시키가이샤 마스크 위치조정장치, 성막장치, 마스크 위치조정방법, 성막방법, 및 전자디바이스의 제조방법
KR102459872B1 (ko) * 2018-07-31 2022-10-26 캐논 톡키 가부시키가이샤 정전척 시스템, 성막 장치, 흡착 방법, 성막 방법 및 전자 디바이스의 제조방법
KR102421610B1 (ko) * 2018-07-31 2022-07-14 캐논 톡키 가부시키가이샤 정전척 시스템, 성막 장치, 흡착 방법, 성막 방법 및 전자 디바이스의 제조방법
CN109023239B (zh) * 2018-09-05 2020-12-29 京东方科技集团股份有限公司 冷却板、镀膜装置
KR102085446B1 (ko) * 2018-09-21 2020-03-05 캐논 톡키 가부시키가이샤 정전척 시스템, 성막 장치, 피흡착체 분리방법, 성막 방법 및 전자 디바이스의 제조방법
KR102085447B1 (ko) * 2018-09-21 2020-03-05 캐논 톡키 가부시키가이샤 정전척 시스템, 성막 장치, 피흡착체 분리방법, 성막 방법 및 전자 디바이스의 제조방법
KR102129435B1 (ko) * 2018-09-21 2020-07-02 캐논 톡키 가부시키가이샤 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
KR102411995B1 (ko) * 2018-09-21 2022-06-21 캐논 톡키 가부시키가이샤 정전척 시스템, 성막장치, 흡착 및 분리방법, 성막방법 및 전자 디바이스의 제조방법
KR102430361B1 (ko) * 2018-09-21 2022-08-05 캐논 톡키 가부시키가이샤 흡착장치, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
KR20200049379A (ko) 2018-10-31 2020-05-08 캐논 톡키 가부시키가이샤 얼라인먼트 장치, 성막장치, 얼라인먼트 방법, 성막방법, 및 전자 디바이스 제조방법
JP7259060B2 (ja) * 2019-02-05 2023-04-17 アプライド マテリアルズ インコーポレイテッド 堆積プロセスのためのマスクのチャッキングのための基板支持体
KR102520050B1 (ko) * 2019-09-07 2023-04-07 캐논 톡키 가부시키가이샤 흡착 장치, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
CN110512184B (zh) * 2019-09-29 2021-10-22 京东方科技集团股份有限公司 基板夹持装置及蒸镀设备
KR20210053761A (ko) * 2019-11-04 2021-05-12 캐논 톡키 가부시키가이샤 성막 장치 및 성막 방법
JP7225275B2 (ja) * 2021-01-26 2023-02-20 キヤノントッキ株式会社 成膜装置

Citations (2)

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CN1965612A (zh) * 2004-03-22 2007-05-16 斗山Dnd股份有限公司 基板沉积方法和有机材料沉积装置
CN101560639A (zh) * 2008-04-14 2009-10-21 爱德牌工程有限公司 有机淀积设备及利用该设备淀积有机物质的方法

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WO2005091683A1 (en) * 2004-03-22 2005-09-29 Doosan Dnd Co., Ltd. Substrate depositing method and organic material depositing apparatus
JP5676175B2 (ja) * 2009-08-24 2015-02-25 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法
KR101438129B1 (ko) * 2010-04-02 2014-09-05 가부시키가이샤 알박 스퍼터링 장치
JP2013534970A (ja) * 2010-06-11 2013-09-09 東京エレクトロン株式会社 化学気相成長を制御するための装置及び方法
US20150114297A1 (en) * 2012-06-08 2015-04-30 Sharp Kabushiki Kaisha Vapor deposition device
KR101926693B1 (ko) * 2012-09-20 2018-12-07 주식회사 원익아이피에스 기판처리장치
KR101473833B1 (ko) * 2013-05-01 2014-12-18 주식회사 에스에프에이 기판 증착 시스템
KR102098741B1 (ko) * 2013-05-27 2020-04-09 삼성디스플레이 주식회사 증착용 기판 이동부, 이를 포함하는 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법

Patent Citations (2)

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CN1965612A (zh) * 2004-03-22 2007-05-16 斗山Dnd股份有限公司 基板沉积方法和有机材料沉积装置
CN101560639A (zh) * 2008-04-14 2009-10-21 爱德牌工程有限公司 有机淀积设备及利用该设备淀积有机物质的方法

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CN106783714A (zh) 2017-05-31
KR20170061230A (ko) 2017-06-05

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