CN106783620B - 抗emi的超结vdmos器件结构及其制备方法 - Google Patents
抗emi的超结vdmos器件结构及其制备方法 Download PDFInfo
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- CN106783620B CN106783620B CN201611103417.6A CN201611103417A CN106783620B CN 106783620 B CN106783620 B CN 106783620B CN 201611103417 A CN201611103417 A CN 201611103417A CN 106783620 B CN106783620 B CN 106783620B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000002347 injection Methods 0.000 claims abstract description 33
- 239000007924 injection Substances 0.000 claims abstract description 33
- 229910052796 boron Inorganic materials 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 53
- 238000000407 epitaxy Methods 0.000 claims description 20
- 239000011241 protective layer Substances 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000007517 polishing process Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
Abstract
Description
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Priority Applications (1)
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CN201611103417.6A CN106783620B (zh) | 2016-12-05 | 2016-12-05 | 抗emi的超结vdmos器件结构及其制备方法 |
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CN201611103417.6A CN106783620B (zh) | 2016-12-05 | 2016-12-05 | 抗emi的超结vdmos器件结构及其制备方法 |
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CN106783620A CN106783620A (zh) | 2017-05-31 |
CN106783620B true CN106783620B (zh) | 2019-11-15 |
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CN201611103417.6A Active CN106783620B (zh) | 2016-12-05 | 2016-12-05 | 抗emi的超结vdmos器件结构及其制备方法 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107611030A (zh) * | 2017-07-21 | 2018-01-19 | 上海华虹宏力半导体制造有限公司 | 超级结的制造方法 |
CN107482051B (zh) * | 2017-08-22 | 2020-03-17 | 电子科技大学 | 一种变禁带宽度的超结vdmos器件 |
CN108376647B (zh) * | 2018-04-19 | 2021-04-30 | 济南安海半导体有限公司 | 屏蔽栅场效应晶体管及其制造方法 |
CN110429140A (zh) * | 2019-08-06 | 2019-11-08 | 上海朕芯微电子科技有限公司 | 一种超结mosfet结构及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002170955A (ja) * | 2000-09-25 | 2002-06-14 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2010225831A (ja) * | 2009-03-24 | 2010-10-07 | Toshiba Corp | 半導体装置の製造方法 |
CN102129997A (zh) * | 2010-01-18 | 2011-07-20 | 上海华虹Nec电子有限公司 | N型超结vdmos中p型柱的形成方法 |
CN102148163A (zh) * | 2011-03-04 | 2011-08-10 | 电子科技大学 | 超结结构和超结半导体器件的制造方法 |
CN105957896A (zh) * | 2016-06-24 | 2016-09-21 | 上海华虹宏力半导体制造有限公司 | 超结功率器件及其制造方法 |
-
2016
- 2016-12-05 CN CN201611103417.6A patent/CN106783620B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002170955A (ja) * | 2000-09-25 | 2002-06-14 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2010225831A (ja) * | 2009-03-24 | 2010-10-07 | Toshiba Corp | 半導体装置の製造方法 |
CN102129997A (zh) * | 2010-01-18 | 2011-07-20 | 上海华虹Nec电子有限公司 | N型超结vdmos中p型柱的形成方法 |
CN102148163A (zh) * | 2011-03-04 | 2011-08-10 | 电子科技大学 | 超结结构和超结半导体器件的制造方法 |
CN105957896A (zh) * | 2016-06-24 | 2016-09-21 | 上海华虹宏力半导体制造有限公司 | 超结功率器件及其制造方法 |
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Address after: 710021 export processing zone, No. twelve, 1 road, Fengcheng, Shaanxi, Xi'an Patentee after: Longteng Semiconductor Co., Ltd. Address before: 710021 export processing zone, No. twelve, 1 road, Fengcheng, Shaanxi, Xi'an Patentee before: Xi'an Lonten Renewable Energy Technology Inc. |
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Address after: 710021 export processing zone, No. twelve, 1 road, Fengcheng, Shaanxi, Xi'an Patentee after: Longteng Semiconductor Co.,Ltd. Address before: 710021 export processing zone, No. twelve, 1 road, Fengcheng, Shaanxi, Xi'an Patentee before: LONTEN SEMICONDUCTOR Co.,Ltd. |