CN102148163A - 超结结构和超结半导体器件的制造方法 - Google Patents
超结结构和超结半导体器件的制造方法 Download PDFInfo
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102623350A (zh) * | 2012-04-11 | 2012-08-01 | 无锡新洁能功率半导体有限公司 | 具有超结结构的半导体器件的制造方法 |
CN103035707A (zh) * | 2013-01-04 | 2013-04-10 | 电子科技大学 | 一种超结垂直氮化镓基异质结场效应晶体管 |
CN103515202A (zh) * | 2012-06-05 | 2014-01-15 | 英飞凌科技奥地利有限公司 | 半导体器件及半导体器件的制造方法 |
CN105633150A (zh) * | 2014-10-31 | 2016-06-01 | 北大方正集团有限公司 | 一种半导体器件及其制作方法 |
CN106783620A (zh) * | 2016-12-05 | 2017-05-31 | 西安龙腾新能源科技发展有限公司 | 抗emi的超结vdmos器件结构及其制备方法 |
CN107527818A (zh) * | 2017-07-21 | 2017-12-29 | 上海华虹宏力半导体制造有限公司 | 超级结的制造方法 |
CN109004020A (zh) * | 2018-07-26 | 2018-12-14 | 上海汇瑞半导体科技有限公司 | 对称高压的半导体功率器件结构 |
CN109755321A (zh) * | 2013-02-05 | 2019-05-14 | 三菱电机株式会社 | 绝缘栅型碳化硅半导体装置及其制造方法 |
CN111370305A (zh) * | 2020-04-30 | 2020-07-03 | 上海华虹宏力半导体制造有限公司 | 深沟槽型超级结器件及其制作方法 |
CN116666222A (zh) * | 2023-07-28 | 2023-08-29 | 江西萨瑞半导体技术有限公司 | 一种Trench MOS器件及其制备方法 |
CN116682734A (zh) * | 2023-07-28 | 2023-09-01 | 江西萨瑞半导体技术有限公司 | 一种Trench MOS器件及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001244461A (ja) * | 2000-02-28 | 2001-09-07 | Toyota Central Res & Dev Lab Inc | 縦型半導体装置 |
US20050242411A1 (en) * | 2004-04-29 | 2005-11-03 | Hsuan Tso | [superjunction schottky device and fabrication thereof] |
CN101267000A (zh) * | 2008-04-29 | 2008-09-17 | 西安理工大学 | 氧化物填充扩展沟槽栅超结mosfet及其制造方法 |
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2011
- 2011-03-04 CN CN2011100518799A patent/CN102148163B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001244461A (ja) * | 2000-02-28 | 2001-09-07 | Toyota Central Res & Dev Lab Inc | 縦型半導体装置 |
US20050242411A1 (en) * | 2004-04-29 | 2005-11-03 | Hsuan Tso | [superjunction schottky device and fabrication thereof] |
CN101267000A (zh) * | 2008-04-29 | 2008-09-17 | 西安理工大学 | 氧化物填充扩展沟槽栅超结mosfet及其制造方法 |
Non-Patent Citations (2)
Title |
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《IEEE Electron Device Letters》 20080831 S.C.Yuan,Y.M.Liu Two-mask silicides fully self-aligned for trench gate power IGBTs with superjunction structure 931-933 1-10 第29卷, 第8期 * |
《IEEE Electron Device Letters》 20080831 S.C.Yuan,Y.M.Liu Two-mask silicides fully self-aligned for trench gate power IGBTs with superjunction structure 931-933 1-10 第29卷, 第8期 2 * |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102623350A (zh) * | 2012-04-11 | 2012-08-01 | 无锡新洁能功率半导体有限公司 | 具有超结结构的半导体器件的制造方法 |
CN103515202A (zh) * | 2012-06-05 | 2014-01-15 | 英飞凌科技奥地利有限公司 | 半导体器件及半导体器件的制造方法 |
US9525043B2 (en) | 2012-06-05 | 2016-12-20 | Infineon Technologies Austria Ag | Semiconductor device and method of manufacturing a semiconductor device |
CN103515202B (zh) * | 2012-06-05 | 2017-03-01 | 英飞凌科技奥地利有限公司 | 半导体器件及半导体器件的制造方法 |
CN103035707A (zh) * | 2013-01-04 | 2013-04-10 | 电子科技大学 | 一种超结垂直氮化镓基异质结场效应晶体管 |
CN103035707B (zh) * | 2013-01-04 | 2017-05-10 | 电子科技大学 | 一种超结垂直氮化镓基异质结场效应晶体管 |
CN109755321A (zh) * | 2013-02-05 | 2019-05-14 | 三菱电机株式会社 | 绝缘栅型碳化硅半导体装置及其制造方法 |
CN105633150A (zh) * | 2014-10-31 | 2016-06-01 | 北大方正集团有限公司 | 一种半导体器件及其制作方法 |
CN106783620A (zh) * | 2016-12-05 | 2017-05-31 | 西安龙腾新能源科技发展有限公司 | 抗emi的超结vdmos器件结构及其制备方法 |
CN106783620B (zh) * | 2016-12-05 | 2019-11-15 | 西安龙腾新能源科技发展有限公司 | 抗emi的超结vdmos器件结构及其制备方法 |
CN107527818A (zh) * | 2017-07-21 | 2017-12-29 | 上海华虹宏力半导体制造有限公司 | 超级结的制造方法 |
CN107527818B (zh) * | 2017-07-21 | 2020-02-07 | 上海华虹宏力半导体制造有限公司 | 超级结的制造方法 |
CN109004020A (zh) * | 2018-07-26 | 2018-12-14 | 上海汇瑞半导体科技有限公司 | 对称高压的半导体功率器件结构 |
CN109004020B (zh) * | 2018-07-26 | 2021-10-26 | 上海汇瑞半导体科技有限公司 | 对称高压的半导体功率器件结构 |
CN111370305A (zh) * | 2020-04-30 | 2020-07-03 | 上海华虹宏力半导体制造有限公司 | 深沟槽型超级结器件及其制作方法 |
CN116666222A (zh) * | 2023-07-28 | 2023-08-29 | 江西萨瑞半导体技术有限公司 | 一种Trench MOS器件及其制备方法 |
CN116682734A (zh) * | 2023-07-28 | 2023-09-01 | 江西萨瑞半导体技术有限公司 | 一种Trench MOS器件及其制备方法 |
CN116682734B (zh) * | 2023-07-28 | 2023-10-13 | 江西萨瑞半导体技术有限公司 | 一种Trench MOS器件及其制备方法 |
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