CN102142378B - 具有延伸沟槽的超结半导体器件的制造方法 - Google Patents
具有延伸沟槽的超结半导体器件的制造方法 Download PDFInfo
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CN102142378B true CN102142378B (zh) | 2012-07-11 |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102446956B (zh) * | 2011-09-05 | 2016-02-17 | 万小敏 | 一种半导体大功率器件及其制造方法 |
CN103367157B (zh) * | 2012-04-06 | 2015-12-09 | 北大方正集团有限公司 | 一种超结mosfet的制备方法 |
CN102945799B (zh) * | 2012-08-24 | 2015-04-29 | 电子科技大学 | 纵向功率半导体器件的制造方法 |
CN103022134B (zh) * | 2012-12-06 | 2015-09-09 | 电子科技大学 | 一种超低比导通电阻的soi横向高压功率器件 |
CN103545220A (zh) * | 2013-10-30 | 2014-01-29 | 电子科技大学 | 一种横向功率器件漂移区的制造方法 |
CN104779276B (zh) * | 2014-03-26 | 2020-01-21 | 上海提牛机电设备有限公司 | 一种具有超结结构的igbt及其制备方法 |
CN105633149A (zh) * | 2014-10-31 | 2016-06-01 | 北大方正集团有限公司 | 一种半导体器件及其制作方法 |
CN105070760B (zh) * | 2015-09-06 | 2017-12-19 | 电子科技大学 | 一种功率mos器件 |
CN113327976A (zh) * | 2021-05-08 | 2021-08-31 | 深圳市威兆半导体有限公司 | 超结功率mosfet的制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101477993A (zh) * | 2009-01-15 | 2009-07-08 | 电子科技大学 | 基于自隔离技术的介质场增强soi耐压结构 |
CN101488524A (zh) * | 2009-02-27 | 2009-07-22 | 东南大学 | 高压n型绝缘体上硅的金属氧化物半导体管 |
CN101702409A (zh) * | 2009-11-09 | 2010-05-05 | 苏州博创集成电路设计有限公司 | 绝缘体上硅的横向p型双扩散金属氧化物半导体管 |
CN101916729A (zh) * | 2010-07-22 | 2010-12-15 | 中国科学院上海微系统与信息技术研究所 | 具有多层超结结构的soi ldmos器件制作方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN101477993A (zh) * | 2009-01-15 | 2009-07-08 | 电子科技大学 | 基于自隔离技术的介质场增强soi耐压结构 |
CN101488524A (zh) * | 2009-02-27 | 2009-07-22 | 东南大学 | 高压n型绝缘体上硅的金属氧化物半导体管 |
CN101702409A (zh) * | 2009-11-09 | 2010-05-05 | 苏州博创集成电路设计有限公司 | 绝缘体上硅的横向p型双扩散金属氧化物半导体管 |
CN101916729A (zh) * | 2010-07-22 | 2010-12-15 | 中国科学院上海微系统与信息技术研究所 | 具有多层超结结构的soi ldmos器件制作方法 |
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