CN106660855A - Supporting glass substrate and laminate using same - Google Patents
Supporting glass substrate and laminate using same Download PDFInfo
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- CN106660855A CN106660855A CN201580038593.3A CN201580038593A CN106660855A CN 106660855 A CN106660855 A CN 106660855A CN 201580038593 A CN201580038593 A CN 201580038593A CN 106660855 A CN106660855 A CN 106660855A
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- glass substrate
- support glass
- substrate
- semiconductor package
- substrate processing
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
- C03B17/06—Forming glass sheets
- C03B17/064—Forming glass sheets by the overflow downdraw fusion process; Isopipes therefor
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Glass Compositions (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The technical objective of the present invention is to contribute to high density packaging of a semiconductor package by inventing a supporting substrate, which is not susceptible to causing a dimensional change of a processed substrate, and a laminate that uses this supporting substrate. A supporting glass substrate according to the present invention is characterized by having an average linear thermal expansion coefficient of more than 81 x 10-7/DEG C but 110 x 10-7/DEG C or less for a temperature range of 20-200 DEG C.
Description
Technical field
The present invention relates to support glass substrate and the duplexer using which, in particular in semiconductor package body
It is used for the support glass substrate and the duplexer using which of the supporting of substrate processing in manufacturing process.
Background technology
For mobile phone, subnotebook PC, PDA (Personal Data Assistance, individual digitalization process
Device) etc. portable electronic device, it is desirable to miniaturization and lightweight.It is associated with this, partly leading used in these electronic equipments
The installing space of body chip is also severely limited, and the high-density installation of semiconductor chip becomes problem.Therefore, in recent years, lead to
Cross three-dimensional mounting technique, will semiconductor chip be stacked on one another and seek partly to lead carrying out connecting up connection between each semiconductor chip
The high-density installation of body packaging body.
Additionally, current wafer-class encapsulation (WLP) is to be formed make by cutting singualtion after projection with the state of chip
Make.But, there is the state for being difficult to increase pin number and expose at the back side of semiconductor chip and installed in current WLP,
Therefore the problems such as semiconductor chip easily produces breach.
Accordingly, as new WLP, it is proposed that the WLP of (fan out) type that sheds.The WLP of the type that sheds increases can pin number
Plus, furthermore it is possible to prevent breach of semiconductor chip etc. by protecting the end of semiconductor chip.
The content of the invention
Invention problem to be solved
For the WLP of the type of shedding, have：Multiple semiconductor chips are sealed with resin-sealing material and processing base is formed
After plate, in the operation connected up by a surface of substrate processing；With the operation for forming solder projection；Deng.
These operations are due to the heat treatment with about 200 DEG C, therefore have encapsulant deformation, the chi of substrate processing occurs
The anxiety of very little change.When there is the change in size of substrate processing, carrying out high-density wiring to a surface of substrate processing becomes tired
Difficulty, is also difficult to properly form solder projection in addition.
In order to suppress the change in size of substrate processing, the use of the supporting substrates for supporting substrate processing is effective.But
Be, even with supporting substrates in the case of, there is also occur substrate processing change in size situation.
The present invention is made in view of the foregoing, and its technical task is to be not susceptible to process base by formulating out
The supporting substrates of the change in size of plate and the duplexer using which, so as to contribute to the high-density installation of semiconductor package body.
Means for solving the problems
The present inventor has been repeated various experiments, as a result finds, by when selecting glass substrate to be used as supporting substrates
Closely specify the thermal coefficient of expansion of the glass substrate such that it is able to solve above-mentioned technical task, thus propose the present invention.
That is, support glass substrate of the invention, it is characterised in that the average linear thermal expansion system within the temperature range of 20～200 DEG C
Number is more than 81 × 10- 7/ DEG C and be 110 × 10- 7/ DEG C below.Wherein, " the average linear heat within the temperature range of 20～200 DEG C
The coefficient of expansion " can be determined by dilatometer.
Glass substrate easily carries out smoothing to surface, and have rigidity.Therefore, using glass substrate as supporting substrates
When, can make that substrate processing is firm, and carry out exactly.Additionally, glass substrate readily penetrates through the light such as ultraviolet light, infrared light.Cause
This, is during using glass substrate as supporting substrates, by arranging adhesive linkage etc. with ultraviolet-curing adhesive etc., can be easy
Substrate processing and support glass substrate are fixed by ground.Additionally, ultrared peel ply etc. is absorbed by arranging, can also be easily
Substrate processing is separated with support glass substrate.As another way, by arranging adhesive linkage with ultraviolet hardening adhesive tape etc.
Deng easily substrate processing can be separated by ground with support glass substrate.
In addition specify, the average linear thermal expansion of the support glass substrate within the temperature range of 20～200 DEG C of the present invention
Coefficient is more than 81 × 10- 7/ DEG C and be 110 × 10- 7/ DEG C below.Thus, the ratio of semiconductor chip is few, close in the substrate processing
When the ratio of closure material is more, the thermal coefficient of expansion of substrate processing and support glass substrate becomes easily matching.Also, both
During matched coefficients of thermal expansion, in processed, the change in size (particularly buckling deformation) of substrate processing becomes to be easily controlled.
As a result, it is possible to high-density wiring be carried out to a surface of substrate processing, can additionally accurately form solder projection.
Second, the support glass substrate of the present invention, it is characterised in that the average line within the temperature range of 30～380 DEG C
Linear thermal expansion coefficient is more than 85 × 10- 7/ DEG C and be 115 × 10- 7/ DEG C below.Wherein, " within the temperature range of 30～380 DEG C
Average thermal linear expansion coefficient " can be determined by dilatometer.
3rd, the support glass substrate of the present invention is used for substrate processing preferably in the manufacturing process of semiconductor package body
Supporting.
4th, what support glass substrate of the invention was molded with preferably through overflow downdraw.
5th, the preferred Young's moduluss of support glass substrate of the present invention are more than 65GPa.Wherein, " Young's moduluss " are referred to
The value determined by flexural resonance method.It should be noted that 1GPa is equivalent to about 101.9Kgf/mm2。
6th, the support glass substrate of the present invention preferably contains SiO in terms of quality %250～80%, Al2O31～
20%th, B2O30～20%, MgO 0～10%, CaO 0～10%, SrO0～7%, BaO 0～7%, ZnO 0～7%, Na2O
0～25%, K2O 0～25% is constituted as glass.
7th, the support glass substrate of the present invention preferably contains SiO in terms of quality %255～70%, Al2O33～
18%th, B2O30～8%, MgO 0～5%, CaO 0～10%, SrO0～5%, BaO 0～5%, ZnO 0～5%, Na2O 2
～23%, K2O 0～20% is constituted as glass.
8th, the support glass substrate of the present invention is preferred：Thickness of slab is less than 2.0mm, and thickness deviation is less than 30 μm and warpage
Measure as less than 60 μm.Wherein, " amount of warpage " refer to highest site in support glass substrate totality and least square focus face it
Between ultimate range absolute value and the absolute value sum of minimum site and least square focus face, can for example pass through
The Bow/Warp of KOBELCO research institute company systems determines device SBW-331ML/d to determine.
9th, the duplexer of the present invention, it is characterised in which is at least possess substrate processing and for supporting processing base
The duplexer of the support glass substrate of plate, the above-mentioned support glass substrate of support glass substrate.
Tenth, the duplexer of the present invention is preferred：Substrate processing at least possesses the quasiconductor sealed with encapsulant
Chip.
11st, the manufacture method of the semiconductor package body of the present invention, it is characterised in that with following operation：Prepare to
Possesses substrate processing less and for supporting the operation of the duplexer of the support glass substrate of substrate processing, conveying the work of duplexer
Sequence and the operation is processed by substrate processing, and support glass substrate is above-mentioned support glass substrate.Need
Bright, " operation of conveying duplexer " and " operation being processed to substrate processing " need not be carried out respectively, can be
Carry out simultaneously.
12nd, the manufacture method of the semiconductor package body of the present invention is preferred：Processed is included in the one of substrate processing
The operation connected up by individual surface.
13rd, the manufacture method of the semiconductor package body of the present invention is preferred：Processed is included in the one of substrate processing
Individual surface forms the operation of solder projection.
14th, the semiconductor package body of the present invention, it is characterised in which is the system using above-mentioned semiconductor package body
Make method making.
15th, the electronic equipment of the present invention, it is characterised in which is the electronic equipment for possessing semiconductor package body, half
Conductor packaging body is above-mentioned semiconductor package body.
Description of the drawings
Fig. 1 is the perspective synoptic chart of of the duplexer for illustrating the present invention.
Fig. 2 is the section synoptic chart of the manufacturing process of the WLP for illustrating the type of shedding.
Specific embodiment
In the support glass substrate of the present invention, the average thermal linear expansion coefficient within the temperature range of 20～200 DEG C surpasses
Cross 81 × 10- 7/ DEG C and be 110 × 10- 7/ DEG C below, preferably 82 × 10- 7/ DEG C more than and 95 × 10- 7/ DEG C below, especially
It is 83 × 10- 7/ DEG C more than and 91 × 10- 7/ DEG C below.Average thermal linear expansion coefficient within the temperature range of 20～200 DEG C
When outside above range, the thermal coefficient of expansion of substrate processing and support glass substrate becomes to be difficult to match.Also, both is hot swollen
When swollen coefficient becomes to mismatch, the change in size (particularly buckling deformation) of substrate processing during processed, is easily produced.
Average thermal linear expansion coefficient within the temperature range of 30～380 DEG C is more than 85 × 10- 7/ DEG C and 115 × 10- 7/
Below DEG C, preferably 86 × 10- 7/ DEG C more than and 100 × 10- 7/ DEG C below, particularly 87 × 10- 7/ DEG C more than and 95 × 10- 7/ DEG C below.When average thermal linear expansion coefficient within the temperature range of 30～380 DEG C is outside above range, substrate processing
Become to be difficult to match with the thermal coefficient of expansion of support glass substrate.Also, when both thermal coefficient of expansions become to mismatch, processing
The change in size (particularly buckling deformation) of substrate processing is produced during process easily.
The support glass substrate of the present invention preferably contains SiO in terms of quality %250～80%, Al2O31～20%, B2O3 0
～20%, MgO 0～10%, CaO 0～10%, SrO 0～7%, BaO 0～7%, ZnO 0～7%, Na2O 0～25%,
K2O 0～25% is constituted as glass.According to each composition of above-mentioned restriction content the reasons why as shown below.Need explanation
It is that, in the explanation of the content of each composition, the record of % then represents quality % as long as no special declaration.
SiO2It is the main component of the skeleton to form glass.SiO2Content be preferably 50～80%, 55～75%, 58～
70%th, particularly 60～68%.SiO2Content it is very few when, Young's moduluss, acid resistance become to be easily reduced.On the other hand, SiO2
Content it is excessive when, high temperature viscosity is uprised, and meltbility becomes to be easily reduced, and becomes easily to separate out the devitrifications such as christobalite knot
Crystalline substance, liquidus temperature become easily rising.
Al2O3It is the composition for improving Young's moduluss, and is to suppress split-phase, the composition of devitrification.Al2O3Content be preferably 1
～20%, 3～18%, 4～16%, 5～13%, 6～12%, particularly 7～10%.Al2O3Content it is very few when, Young mould
Amount becomes to be easily reduced, and glass becomes easy split-phase, devitrification in addition.On the other hand, Al2O3Content it is excessive when, high temperature viscosity become
Height, meltbility, mouldability become to be easily reduced.
B2O3It is to improve meltbility, the composition of devitrification resistance, is to improve easy scratch resistant, improve the composition of intensity in addition.B2O3
Content be preferably 0～20%, 1～12%, 2～10%, particularly 3～8%.B2O3Content it is very few when, meltbility, resistance to mistake
Permeability becomes to be easily reduced, and in addition the patience of the medicinal liquid of Fluohydric acid. system is become to be easily reduced.On the other hand, B2O3Content mistake
When many, Young's moduluss, acid resistance become to be easily reduced.
From from the viewpoint of improving Young's moduluss, Al2O3- B2O3Preferably more than 0%, more than 1%, more than 3%, 5%
Above, more than 7%, particularly more than 9%.It should be noted that " Al2O3- B2O3" refer to from Al2O3Content deduct B2O3's
The value of content.
MgO is to reduce high temperature viscometrics, improve the composition of meltbility, is to significantly improve Young's moduluss in alkaline earth oxide
Composition.The content of MgO is preferably 0～10%, 0～8%, 0～5%, 0～3%, 0～2%, particularly 0～1%.MgO's
When content is excessive, devitrification resistance becomes to be easily reduced.
CaO is to reduce high temperature viscometrics, significantly improve the composition of meltbility.Additionally, in alkaline earth oxide, importing former
Material is less expensive, therefore is the composition for reducing cost of material.The content of CaO preferably 0～10%, 0.5～8%, 1～6%, spy
It is not 2～5%.When the content of CaO is excessive, glass becomes easy devitrification.It should be noted that when the content of CaO is very few, it is difficult to
Enjoy the effect above.
SrO is the composition for suppressing split-phase, is the composition for improving devitrification resistance in addition.The content of SrO is preferably 0～7%, 0
～5%, 0～3%, particularly 0 are less than 1%.When the content of SrO is excessive, glass becomes easy devitrification.
BaO is the composition for improving devitrification resistance.The content of BaO is preferably 0～7%, 0～5%, 0～3%, more than 0 and little
In 1%.When the content of BaO is excessive, glass becomes easy devitrification.
Mass ratio CaO/ (MgO+CaO+SrO+BaO) is preferably more than 0.5, more than 0.6, more than 0.7, more than 0.8, especially
It is preferred that more than 0.9.When mass ratio CaO/ (MgO+CaO+SrO+BaO) is too small, cost of material becomes easily surging.Need explanation
Be, " CaO/ (MgO+CaO+SrO+BaO) " refer to the content of CaO divided by MgO, CaO, SrO and BaO total obtained by value.
ZnO is to reduce high temperature viscometrics, significantly improve the composition of meltbility.The content of ZnO be preferably 0～7%, 0.1～
5%th, particularly 0.5～3%.When the content of ZnO is very few, it is difficult to enjoy the effect above.It should be noted that the content mistake of ZnO
When many, glass becomes easy devitrification.
Na2O is important composition for thermal coefficient of expansion optimization is made, and is to reduce high temperature viscometrics, significantly carry in addition
High meltbility, while contributing to the composition of the initial melt of frit.Na2The content of O is preferably 0～25%, 5～25%, 8
～24%, 11～23%, 13～21%, especially more than 15～19%.Na2When the content of O is very few, meltbility becomes easily drop
It is low, and have the anxiety that thermal coefficient of expansion undeservedly declines.On the other hand, Na2When the content of O is excessive, there is thermal coefficient of expansion improper
Ground becomes big anxiety.
From from the viewpoint of making thermal coefficient of expansion optimization, mass ratio Al2O3/Na2O be preferably 0.20～1.3,0.25～
1.0th, 0.30～0.85,0.35～0.65, particularly 0.40～0.55.
K2O is the composition for adjusting thermal coefficient of expansion, be in addition reduce high temperature viscometrics, improve meltbility, while helping
In the composition of the initial melt of glass raw material.K2The content of O be preferably 0～25%, 0～20%, 0～15%, 0～10%, 0～
6%th, particularly 0～1%.K2When the content of O is excessive, there is thermal coefficient of expansion undeservedly to become big anxiety.
Na2O+K2The content of O is preferably 12～35%, 15～25%, 16～23%, 17～22%, particularly 18～
21%.Thus, become easily the average thermal linear expansion coefficient within the temperature range of 20～200 DEG C is defined as more than 81 ×
10- 7And be 110 × 10- 7/ DEG C below.It should be noted that " Na2O+K2O " is Na2O and K2The total amount of O.
In the case where the raising of meltbility is paid attention to, mass ratio Na2O/(Na2O+K2O) preferably greater than 0.5, more than 0.6,
More than 0.7, more than 0.8, more than 0.9, particularly more than 0.95, in the case where chemical durability is paid attention to, preferably 0.65 with
Under, less than 0.6, less than 0.55, less than 0.5, less than 0.45, particularly less than 0.4.It should be noted that " Na2O/(Na2O+
K2O) " it is Na2The content of O is divided by Na2O and K2It is worth obtained by the total amount of O.
In addition to mentioned component, other compositions can also be imported as any condition.It should be noted that from can be with can
By ground enjoy the present invention effect from the viewpoint of, the content of other compositions beyond mentioned component it is total be preferably 10% with
Under, particularly less than 5%.
Fe2O3The composition that can serve as impurity component or clarifier composition and import.But, Fe2O3Content it is excessive when,
There is the anxiety of ultraviolet ray transmissivity reduction.That is, Fe2O3Content it is excessive when, it is difficult to suitably carry out via adhesive linkage, peel ply plus
The bonding and stripping of work substrate and support glass substrate.Therefore, Fe2O3Content be preferably less than 0.05%, less than 0.03%,
Particularly less than 0.02%.It should be noted that " Fe so-called in the present invention2O3" including divalent ferrum oxide and trivalent oxidation
Ferrum, the ferrum oxide of divalent are converted into Fe2O3And process.Other oxides similarly, are carried out on the basis of described oxide
Process.
As clarifier, As2O3、Sb2O3Can effectively play a role, but from for the viewpoint of environment, preferably subtract as far as possible
Few these compositions.As2O3Content be preferably less than 1%, less than 0.5%, particularly less than 0.1%, expect to be substantially free of.
Wherein, " it is substantially free of As2O3" refer to glass composition in As2O3Content less than 0.05% situation.Additionally, Sb2O3's
Content is preferably less than 1%, less than 0.5%, particularly less than 0.1%, expects to be substantially free of.Wherein, " it is substantially free of
Sb2O3" refer to glass composition in Sb2O3Content less than 0.05% situation.
SnO2It is the composition that there is good clarification in high temperature range, is the composition for declining high temperature viscometrics in addition.
SnO2Content be preferably 0～1%, 0.001～1%, 0.01～0.9%, particularly 0.05～0.7%.SnO2Content it is excessive
When, become easily to separate out SnO2Devitrification crystallization.It should be noted that SnO2Content it is very few when, it is difficult to enjoy the effect above.
Further, respectively less than 3% or so F, Cl, SO can as long as not damaging glass performance, then be imported3, C or Al,
The metal dust of Si etc. is used as clarifier.Additionally, CeO2Etc. can also import below 3% or so, but it is saturating to need to pay attention to ultraviolet
Cross the decline of rate.
Cl is the composition of the melting for promoting glass.If having imported Cl in glass composition, then can seek melt temperature
Reduction, the promotion of clarification, as a result, becoming easily to realize reduction, the long lifetime of glass manufacture kiln of melting cost.But
It is, when the content of Cl is excessive, the anxiety of the hardware having around etching glass manufacture kiln.Therefore, the content of Cl be preferably 3% with
Under, less than 1%, less than 0.5%, particularly less than 0.1%.
P2O5It is the composition of the precipitation that can suppress devitrification crystallization.But, import the P of volume2O5When, glass becomes easily to divide
Phase.Therefore, P2O5Content be preferably 0～2.5%, 0～1.5%, 0～0.5%, particularly 0～0.3%.
TiO2It is to reduce high temperature viscometrics, improve the composition of meltbility, and is the composition for suppressing reversal effect.But, lead
Enter the TiO of volume2When, glass becomes easily coloring, transmitance to be reduced.Therefore, TiO2Content be preferably 0～5%, 0～3%,
0～1%, particularly 0～0.02%.
ZrO2It is the composition for improving resistance to chemical reagents, Young's moduluss.But, import the ZrO of volume2When, glass becomes easily mistake
Thoroughly, additionally due to it is infusibility to import raw material, therefore the crystallinity foreign body not melted is mixed into the anxiety of product substrate.Therefore,
ZrO2Content be preferably 0～5%, 0～3%, 0～1%, particularly 0～0.5%.
Y2O3、Nb2O5、La2O3It is improved the effect of strain point, Young's moduluss etc..But, the content difference of these compositions is more
When 5%, particularly 1%, the anxiety for having cost of material, goods cost surging.
The support glass substrate of the present invention preferably has following characteristic.
The present invention support glass substrate Young's moduluss be preferably more than 65GPa, more than 67GPa, more than 68GPa,
More than 69GPa, more than 70GPa, more than 71GPa, particularly more than 72GPa, more than 73GPa.When Young's moduluss are too low, become difficult
To maintain the rigidity of duplexer, become to be susceptible to the deformation of substrate processing, warpage, breakage.
Liquidus temperature be preferably less than 1150 DEG C, less than 1120 DEG C, less than 1100 DEG C, less than 1080 DEG C, less than 1050 DEG C,
Less than 1010 DEG C, less than 980 DEG C, less than 960 DEG C, less than 950 DEG C, particularly less than 940 DEG C.Thus, become easily by under
Traction therapy, particularly overflow downdraw are by glass substrate forming, therefore become easily to make the little glass substrate of thickness of slab, even and if
Surface not being ground can also reduce thickness deviation.Or lead to too small amount of grinding, overall thickness deviation can be reduced
To less than 2.0 μm, especially less than 1.0 μm.As a result, the manufacturing cost of glass substrate can also be reduced.Further, in glass base
In the manufacturing process of plate, become easily to prevent devitrification crystallization, the situation of the productivity ratio of reduction glass substrate.Wherein, " liquid phase
Temperature " can be calculated as follows：By the standard screen by 30 mesh (500 μm) and remain in 50 mesh (300 μm) standard screen glass
After powder is put into platinum boat, kept for 24 hours in temperature gradient furnace, determine the temperature for separating out crystallization, such that it is able to calculate.
Viscosity during liquidus temperature is preferably 104.6More than dPas, 105.0More than dPas, 105.2More than dPas,
105.4More than dPas, 105.6More than dPas, particularly 105.8More than dPas.Thus, become easily by glass tube down-drawing, spy
It is not that overflow downdraw carries out molding to glass substrate, even if such that it is able to easily make the little glass substrate of thickness of slab and not right
Surface is ground.Or, leading to too small amount of grinding can decrease below overall thickness deviation
2.0 μm, especially less than 1.0 μm.As a result, it is possible to reduce the manufacturing cost of glass substrate.Further, in the manufacture of glass substrate
In operation, become easily to prevent devitrification crystallization, the situation of the productivity ratio of reduction glass substrate.Wherein, " in liquidus temperature
Viscosity " can be determined by traction therapy on platinum ball.It should be noted that viscosity during liquidus temperature is the index of mouldability, liquid phase
Viscosity during temperature is more high, and mouldability is more improved.
102.5Temperature during dPas be preferably less than 1580 DEG C, less than 1500 DEG C, less than 1450 DEG C, less than 1400 DEG C,
Less than 1350 DEG C, particularly 1200～1300 DEG C.102.5When temperature during dPas is improved, meltbility is reduced, glass substrate
Manufacturing cost is surging.Wherein, " 102.5Temperature during dPas " can be determined by traction therapy on platinum ball.It should be noted that
102.5, equivalent to melt temperature, the temperature is more low, and meltbility is more improved for temperature during dPas.
The support glass substrate of the present invention is preferably through glass tube down-drawing, be molded with especially by overflow downdraw.
Overflow downdraw is that the both sides of the groove-like structure thing from thermostability are overflowed melten glass and the melten glass of spilling is tied in channel-shaped
The lower top of structure thing converges, while drawing and forming and the method that manufactures glass substrate downwards.In overflow downdraw, glass should be become
The face on the surface of glass substrate does not contact channel-shaped refractory material, is formed with the state of Free Surface.Therefore, easily make plate
Thick little glass substrate, even and if not being ground to surface and can also reduce thickness deviation.Or, lead to too small amount of grinding
Overall thickness deviation can be made to decrease below 2.0 μm, especially less than 1.0 μm.As a result, it is possible to reduce the system of glass substrate
Cause this.
As the forming method of glass substrate, in addition to overflow downdraw, it is also an option that drawing method, weight under such as discharge orifice
Draw method, float glass process etc. under new.
The glass substrate of the present invention is preferably substantially discoideus or wafer-like, and its diameter is preferably more than 100mm and 500mm
Below, more than 150mm and below 450mm are particularly.Thus, become to be suitable for the manufacturing process of semiconductor package body.According to
Needs can also be processed into the shapes such as the shape beyond which, such as rectangle.
In the glass substrate of the present invention, preferred below the 1mm of circularity, below 0.1mm, particularly below 0.05mm, 0.03mm
Below.Circularity is less, is more suitable for the manufacturing process of semiconductor package body.It should be noted that the definition of circularity is：Chip
The maximum of profile deduct value obtained by minima.
In the support glass substrate of the present invention, thickness of slab is preferably less than 2.0mm, below 1.5mm, below 1.2mm, 1.1mm
Below, below 1.0mm, particularly below 0.9mm.Thickness of slab is more thin, and the quality of duplexer becomes lighter, therefore the property disposed more is carried
It is high.On the other hand, when thickness of slab is excessively thin, the intensity decreases of support glass substrate itself, it becomes difficult to play the function of supporting substrates.
Therefore, thickness of slab is preferably more than 0.1mm, more than 0.2mm, more than 0.3mm, more than 0.4mm, more than 0.5mm, more than 0.6mm, spy
It is not more than 0.7mm.
The present invention support glass substrate in, thickness deviation be preferably less than 30 μm, less than 20 μm, less than 10 μm, 5 μm with
Under, less than 4 μm, less than 3 μm, less than 2 μm, less than 1 μm, particularly 0.1 is less than 1 μm.In addition arithmetic average roughness
Ra is preferably below 100nm, below 50nm, below 20nm, below 10nm, below 5nm, below 2nm, below 1nm, particularly
Below 0.5nm.The easier raising of precision of the more high then processed of surface accuracy.Wiring precision can be particularly improved, therefore
Highdensity wiring can be carried out.Additionally, the intensity of support glass substrate is improved, support glass substrate and duplexer become to be difficult
It is damaged.Further, by increasing capacitance it is possible to increase the recycling number of times of support glass substrate.It should be noted that " arithmetic average roughness Ra " can
Determine with by contact pin type surface roughness meter or atomic force microscope (AFM).
The support glass substrate of the present invention is preferably being ground to surface after overflow downdraw molding.Thus, hold
Thickness deviation is defined to into less than 2 μm, less than 1 μm, especially less than 1 μm easily.
In the support glass substrate of the present invention, amount of warpage is preferably less than 60 μm, less than 55 μm, less than 50 μm, 1～45 μ
M, particularly 5～40 μm.Amount of warpage is more little, and the precision of processed is more improved.Wiring precision can be particularly improved, therefore
Highdensity wiring can be carried out.
In the support glass substrate of the present invention, the ultraviolet ray transmissivity of the wavelength 300nm in thickness of slab direction be preferably 40% with
Above, more than 50%, more than 60%, more than 70%, particularly more than 80%.When ultraviolet ray transmissivity is too low, it is difficult to by irradiation
Ultraviolet light utilizes adhesive linkage by substrate processing and supporting substrates bonding.Additionally, arranging viscous by ultraviolet hardening adhesive tape etc.
When connecing layer etc., substrate processing and support glass substrate become to be difficult to be easily separated.It should be noted that " the ripple in thickness of slab direction
The ultraviolet ray transmissivity of long 300nm " for example can be saturating by using the light splitting of double beam type spectrophotometric determination wavelength 300nm
Cross rate to be evaluated.
The support glass substrate of the present invention does not preferably carry out ion-exchange treatment, and preferred surface does not have compressive stress layers.
When carrying out ion-exchange treatment, the manufacturing cost of support glass substrate is surging.Further, when carrying out ion-exchange treatment, it is difficult to drop
The overall thickness deviation of low support glass substrate.It should be noted that the support glass substrate of the present invention be not precluded from carrying out from
Son exchanges and processes and form the form of compressive stress layers on surface.From from the viewpoint of improve mechanical strength, ion is preferably carried out
Exchange process and compressive stress layers are formed on surface.
The duplexer of the present invention, it is characterised in that be at least possess substrate processing and the supporting for supporting substrate processing
The duplexer of glass substrate, wherein, support glass substrate is above-mentioned support glass substrate.Wherein, of the invention duplexer
Technical characteristic (preferred version, effect) is to repeat with the technical characteristic of the support glass substrate of the present invention.Therefore, this specification
In the repeating part omitted record in detail.It should be noted that in order that substrate processing and support glass substrate are easily fixed,
Ultraviolet hardening adhesive tape can also be used as adhesive linkage.
The duplexer of the present invention has adhesive linkage preferably between substrate processing and support glass substrate.Adhesive linkage is preferably
Resin, such as preferred heat-curing resin, light-cured resin (particularly ultraviolet curable resin) etc..Furthermore it is preferred that having
The adhesive linkage of the thermostability of the heat treatment in the manufacturing process of tolerable semiconductor package body.Thus, in semiconductor package body
In manufacturing process, adhesive linkage is difficult fusing, can improve the precision of processed.
The duplexer of the present invention is preferably between substrate processing and support glass substrate, more specifically in substrate processing and glues
Connect.Thus, after the processed specified to substrate processing, easily by substrate processing
Peel off from support glass substrate.From from the viewpoint of productivity ratio, the stripping of substrate processing is entered preferably by irradiation lights such as laser
OK.As LASER Light Source, it is possible to use YAG laser (wavelength 1064nm), semiconductor laser (780～1300nm of wavelength) etc. are infrared
Ray laser light source.Additionally, the resin decomposed by irradiating infrared laser can be used in peel ply.Further, it is also possible to
Addition in resin is efficiently absorbed infrared ray and is changed into the material of heat.For example, it is also possible to add white carbon black, graphite in resin
Powder, particle metal powder, dyestuff, pigment etc..
Peel ply " is peeled off in layer " by being produced by irradiation lights such as laser or the material of " interface peel " is constituted.That is, by
Following material is constituted：Irradiate some strength light when, between the atom in atom or molecule or intermolecular adhesion disappear or
Weaken, ablation (ablation) etc. is produced so as to peeling-off material.It should be noted that there is situations below：By shining
The irradiation of light is penetrated, the composition included in peel ply becomes gas and releases, realize detached situation；Peel ply absorbing light and become
Gas, its steam are released and realize detached situation.
In the duplexer of the present invention, preferred support glass substrate is bigger than substrate processing.Thus, supporting substrate processing and propping up
When holding glass substrate, even both center is slightly offset from the case of, the edge part of substrate processing be not easy to from
Hold glass substrate protrusion.
The manufacture method of the semiconductor package body of the present invention, it is characterised in that with following operation：Prepare at least to possess and add
Work substrate and for support the duplexer of the support glass substrate of substrate processing operation, conveying duplexer operation and to plus
The operation that work substrate is processed, also, support glass substrate is above-mentioned support glass substrate.Wherein, it is of the invention
The technical characteristic (preferred version, effect) of the manufacture method of semiconductor package body and support glass substrate of the invention and duplexer
Technical characteristic be repeat.Therefore, in this specification, the repeating part is omitted and is recorded in detail.
In the manufacture method of the semiconductor package body of the present invention, processed is preferably to enter on a surface of substrate processing
The process of row wiring forms the process of solder projection on a surface of substrate processing.The semiconductor package body of the present invention
In manufacture method, when these are processed, substrate processing is not susceptible to change in size, therefore can preferably carry out these operations.
As processed, in addition to the foregoing, can also be to substrate processing surface (typically with supporting glass
The surface of the contrary side of glass substrate) carry out the process of mechanical lapping, to a surface of substrate processing (typically with supporting glass
The surface of the contrary side of glass substrate) carry out dry ecthing process, to a surface of substrate processing (typically and supporting glass
The surface of the contrary side of substrate) carry out in the process of wet etching any one.It should be noted that the semiconductor package of the present invention
In the manufacture method of dress body, substrate processing is not susceptible to warpage, and is able to maintain that the rigidity of duplexer.As a result, it is possible to excellent
Choosing carries out above-mentioned processed.
The semiconductor package body of the present invention, it is characterised in which is the manufacture method using above-mentioned semiconductor package body
Make.Wherein, the technical characteristic (preferred version, effect) of semiconductor package body of the invention and supporting glass base of the invention
The technical characteristic of the manufacture method of plate, duplexer and semiconductor package body is to repeat.Therefore, in this specification, to the repetition
Omit detailed record in part.
The electronic equipment of the present invention, it is characterised in which is the electronic equipment for possessing semiconductor package body, semiconductor packages
Body is above-mentioned semiconductor package body.Wherein, the technical characteristic (preferred version, effect) of electronic equipment of the invention and the present invention
Support glass substrate, duplexer, the manufacture method of semiconductor package body, the technical characteristic of semiconductor package body be to repeat.
Therefore, in this specification, detailed description is omitted to the repeating part.
Referring to the drawings the present invention is further described.
Fig. 1 is the main view synoptic chart of of the duplexer 1 for illustrating the present invention.In Fig. 1, duplexer 1 possesses supporting glass
Substrate 10 and substrate processing 11.Support glass substrate 10 is fitted in substrate processing to prevent the change in size of substrate processing 11
On 11.Peel ply 12 and adhesive linkage 13 are configured between support glass substrate 10 and substrate processing 11.Peel ply 12 and supporting glass
Glass substrate 10 is contacted, and adhesive linkage 13 is contacted with substrate processing 11.
As shown in Figure 1, duplexer 1 is stacked gradually and is configured with support glass substrate 10, peel ply 12, adhesive linkage 13, processing
Substrate 11.The shape of support glass substrate 10 is determined according to substrate processing 11, in Fig. 1, support glass substrate 10 and processing base
The shape of plate 11 is substantially circular plate shape.Peel ply 12 can for example use the resin decomposed by irradiating laser.Additionally,
The material for being efficiently absorbed laser and being converted to heat can also be added in resin.For example, white carbon black, stone can also be added in resin
Powdered ink, particle metal powder, dyestuff, pigment etc..Peel ply 12 can pass through plasma CVD, the rotation based on sol-gel process
Coating etc. and formed.Adhesive linkage 13 is made up of resin, for example can be by various print processes, ink-jet method, method of spin coating, rolling method
Formed Deng coating.Additionally, it is also possible to use ultraviolet hardening adhesive tape.Adhesive linkage 13 is passing through peel ply 12 from substrate processing 11
After peeling off support glass substrate 10, removed by the dissolving such as solvent.Ultraviolet hardening adhesive tape can pass through after irradiation ultraviolet radiation
Stripping is removed with adhesive tape.
Fig. 2 is the section synoptic chart of the manufacturing process of the WLP for illustrating the type of shedding.Fig. 2 (a) is illustrated the one of supporting member 20
The state of adhesive linkage 21 is formed with individual surface.As needed, can be peeled off with being formed between self-supporting part 20 and adhesive linkage 21
Layer.Then, as shown in Fig. 2 (b), multiple semiconductor chips 22 of fitting on adhesive linkage 21.Now, make having for semiconductor chip 22
The face of effect (ア Network テ ィ Block) side is contacted with adhesive linkage 21.Then, as shown in Fig. 2 (c), semiconductor chip 22 is used into resin seal
Material 23 is sealed.Change in size when encapsulant 23 can carry out molding using the change in size after compression forming, wiring is few
Material.Then, such as Fig. 2 (d), shown in (e), make the substrate processing 24 sealed by semiconductor chip 22 from 20 points of supporting member
From being then adhesively fixed with support glass substrate 26 via adhesive linkage 25.Now, in the surface of substrate processing 24, with embedment
The surface of one side surface opposition side of semiconductor chip 22 is configured in 26 side of support glass substrate.So operate, can obtain
Obtain duplexer 27.It should be noted that as needed, stripping can be formed between adhesive linkage 25 and support glass substrate 26
Layer.Further, after obtained duplexer 27 is conveyed, semiconductor chip 22 has been imbedded in substrate processing 24 as shown in Fig. 2 (f)
After the surface of side forms wiring 28, multiple solder projections 29 are formed.Finally, substrate processing 24 is separated from support glass substrate 26
Afterwards, substrate processing 24 is cut into into each semiconductor chip 22, for packaging process (Fig. 2 (g)) hereafter.
Embodiment 1
The present invention is illustrated below based on embodiment.It should be noted that below example is only illustrated.The present invention
Any restriction of below example is not received.
Table 1,2 illustrates embodiments of the invention (sample No.1～34).
[table 1]
[table 2]
[table 3]
First, the glass batch materials for the mode according to the glass composition become in table having been allocated frit are put into platinum earthenware
Crucible, melts 4 hours at 1550 DEG C.When glass batch materials melt, stirred with platinum agitator and homogenized.Then, make melting
To on carbon slab, after being shaped to tabular, the temperature from 20 DEG C higher than annealing point or so is annealed to room temperature with 3 DEG C/min to glass stream.It is right
The each sample for obtaining, evaluates the average thermal linear expansion coefficient α within the temperature range of 20～200 DEG C20～200, at 30～380 DEG C
Within the temperature range of average thermal linear expansion coefficient α30～380, density p, strain point Ps, annealing point Ta, softening point Ts, high temperature glue
Degree 104.0Temperature, high temperature viscosity 10 during dPas3 . 0Temperature, high temperature viscosity 10 during dPas2 . 5Temperature, height during dPas
Warm viscosity 102 . 0Viscosities il, Young's moduluss E and wavelength 300nm during temperature, liquidus temperature TL, liquidus temperature TL during dPas
Ultraviolet ray transmissivity T.
Average thermal linear expansion coefficient α within the temperature range of 20～200 DEG C20～200, in 30～380 DEG C of temperature models
Average thermal linear expansion coefficient α in enclosing30～380It is the value by dilatometer measurement.
Density p is the value determined by known Archimedes method.
Strain point Ps, annealing point Ta, softening point Ts are the values that the method based on ASTM C336 is determined.
High temperature viscosity 104 . 0dPa·s、103.0dPa·s、102.5Temperature during dPas is determined by traction therapy on platinum ball
Value.
Liquidus temperature TL is will to have passed through the standard screen of 30 mesh (500 μm) and residued in the standard screen of 50 mesh (300 μm)
Glass powder loads platinum boat, is separated out by measurement microscope obtained by the temperature of crystallization in temperature gradient furnace after being kept for 24 hours
Value.Viscosities il during liquidus temperature be by platinum ball traction therapy determine liquidus temperature TL when glass viscosity obtained by value.
Young's moduluss E are the values determined by resonance method.
From table 1,2, average thermal linear expansion coefficient of sample No.1～34 within the temperature range of 20～200 DEG C
α30～200For 81.5 × 10- 7/ DEG C～107.8 × 10- 7/ DEG C, the average linear thermal expansion within the temperature range of 30～380 DEG C
Factor alpha30～380For 85.4 × 10- 7/ DEG C～114.0 × 10- 7/℃.Result, it is believed that sample No.1～34 are suitable as partly leading
It is used for the support glass substrate of the supporting of substrate processing in the manufacturing process of body manufacture device.
Embodiment 2
The following each sample for making [embodiment 2].First, according to the glass of sample No.1～34 become described in table 1,2
After the mode of composition allocates frit, glass melting furnace is supplied to, melts at 1500～1600 DEG C, then melten glass is supplied
Overflow down draw shaped device is given to, and the mode for 0.7mm being reached according to thickness of slab carries out molding respectively.Will be the glass substrate for obtaining (total
About 4.0 μm of body thickness deviation) it is processed intoAfter thickness, two surface is ground with lapping device
Mill process.Specifically, two surface clampings of glass substrate are made into glass substrate with a pair of different grinding pads of external diameter
Rotate together with a pair of grinding pads, process is ground to two surfaces of glass substrate.During milled processed, according to once in a while
Make the mode that the part of glass substrate is projected from grinding pad to control.It should be noted that grinding pad is polyurethane, grinding
The mean diameter of the slurry used during process is 2.5 μm, and grinding rate is 15m/ minutes.After each milled processed to acquisition
Glass substrate, determines device SBW-331ML/d using the Bow/Warp of KOBELCO research institute company systems and surveys
Fixed totality thickness deviation and amount of warpage.As a result, overall thickness deviation is respectively smaller than 1.0 μm, amount of warpage be respectively 35 μm with
Under.
The explanation of symbol
1st, 27 duplexer
10th, 26 support glass substrate
11st, 24 substrate processing
12 peel plies
13rd, 21,25 adhesive linkage
20 supporting members
22 semiconductor chips
23 encapsulants
28 wirings
29 solder projections
Claims (15)
1. a kind of support glass substrate, it is characterised in that the average linear thermal expansion system within the temperature range of 20 DEG C～200 DEG C
Number is more than 81 × 10- 7/ DEG C and be 110 × 10- 7/ DEG C below.
2. a kind of support glass substrate, it is characterised in that the average thermal linear expansion coefficient within the temperature range of 30～380 DEG C
More than 85 × 10- 7/ DEG C and be 115 × 10- 7/ DEG C below.
3. support glass substrate according to claim 1 and 2, it is characterised in that its manufacture work in semiconductor package body
It is used for the supporting of substrate processing in sequence.
4. the support glass substrate according to any one of claims 1 to 3, it is characterised in which is by overflow down draw
What method was molded with.
5. the support glass substrate according to any one of Claims 1 to 4, it is characterised in that Young's moduluss be 65GPa with
On.
6. the support glass substrate according to any one of Claims 1 to 5, it is characterised in that contain SiO in terms of quality %2
50%～80%, Al2O31%～20%, B2O30%～20%, MgO 0%～10%, CaO 0%～10%, SrO 0%
～7%, BaO 0%～7%, ZnO 0%～7%, Na2O 0%～25%, K2O 0%～25% is constituted as glass.
7. support glass substrate according to claim 6, it is characterised in that contain SiO in terms of quality %255%～
70%th, Al2O33%～18%, B2O30%～8%, MgO 0%～5%, CaO 0%～10%, SrO 0%～5%, BaO
0%～5%, ZnO 0%～5%, Na2O 2%～23%, K2O 0%～20% is constituted as glass.
8. the support glass substrate according to any one of claim 1～7, it is characterised in that thickness of slab is less than 2.0mm, plate
Thick deviation is less than 30 μm, and amount of warpage is less than 60 μm.
9. a kind of duplexer, it is characterised in which is at least possess substrate processing and the supporting glass for supporting substrate processing
The duplexer of substrate, support glass substrate are the support glass substrate any one of claim 1～8.
10. duplexer according to claim 9, it is characterised in that substrate processing at least possesses to be carried out with encapsulant
The semiconductor chip of sealing.
11. a kind of manufacture methods of semiconductor package body, it is characterised in that with following operation：Preparation at least possesses processing base
Plate and for support the duplexer of the support glass substrate of substrate processing operation,
Conveying duplexer operation and
The operation is processed by substrate processing；
Also, support glass substrate is the support glass substrate any one of claim 1～8.
The manufacture method of 12. semiconductor package bodies according to claim 11, it is characterised in that processed is included in and adds
The operation connected up by one surface of work substrate.
The manufacture method of 13. semiconductor package bodies according to claim 11 or 12, it is characterised in that processed includes
The operation of solder projection is formed on a surface of substrate processing.
14. a kind of semiconductor package bodies, it is characterised in which is using the quasiconductor any one of claim 11～13
What the manufacture method of packaging body made.
15. a kind of electronic equipment, it is characterised in which is the electronic equipment for possessing semiconductor package body, semiconductor package body is
Semiconductor package body described in claim 14.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210859949.1A CN115108719A (en) | 2014-09-03 | 2015-08-27 | Supporting glass substrate and laminate using same |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2014-178807 | 2014-09-03 | ||
| JP2014-210437 | 2014-10-15 | ||
| JP2014210437 | 2014-10-15 | ||
| JP2015031495 | 2015-02-20 | ||
| JP2015-031495 | 2015-02-20 | ||
| JP2015-083852 | 2015-04-16 | ||
| JP2015083852 | 2015-04-16 | ||
| PCT/JP2015/074269 WO2016035674A1 (en) | 2014-09-03 | 2015-08-27 | Supporting glass substrate and laminate using same |
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| CN201580038593.3A Pending CN106660855A (en) | 2014-09-03 | 2015-08-27 | Supporting glass substrate and laminate using same |
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|---|---|
| JP (3) | JP6741214B2 (en) |
| KR (1) | KR102402822B1 (en) |
| CN (2) | CN115108719A (en) |
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| CN110831908A (en) * | 2017-07-26 | 2020-02-21 | 日本电气硝子株式会社 | Supporting glass substrate and laminated substrate using same |
| CN110944953A (en) * | 2017-07-26 | 2020-03-31 | Ａｇｃ株式会社 | Supporting glass for semiconductor package |
| CN111056752A (en) * | 2019-12-18 | 2020-04-24 | 东旭集团有限公司 | Glass substrate assembly for display panel and method for manufacturing glass substrate assembly |
| CN111285603A (en) * | 2018-12-07 | 2020-06-16 | 日本电气硝子株式会社 | Glass |
| CN111741933A (en) * | 2018-02-20 | 2020-10-02 | 日本电气硝子株式会社 | Glass |
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| JP7011215B2 (en) * | 2016-12-14 | 2022-02-10 | 日本電気硝子株式会社 | Support glass substrate and laminate using it |
| WO2018110163A1 (en) * | 2016-12-14 | 2018-06-21 | 日本電気硝子株式会社 | Glass support substrate and laminate using same |
| JP7280546B2 (en) * | 2017-11-09 | 2023-05-24 | 日本電気硝子株式会社 | Glass plate and wavelength conversion package using the same |
| CN116940536A (en) * | 2021-02-05 | 2023-10-24 | 日本板硝子株式会社 | Glass composition, glass filler, and method for producing same |
| WO2023032163A1 (en) * | 2021-09-03 | 2023-03-09 | 株式会社レゾナック | Method for producing semiconductor device, provisional fixation material, and application of provisional fixation material for production of semiconductor device |
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| CN115636583A (en) * | 2014-04-07 | 2023-01-24 | 日本电气硝子株式会社 | Supporting glass substrate and laminate using same |
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- 2015-08-27 WO PCT/JP2015/074269 patent/WO2016035674A1/en active Application Filing
- 2015-08-27 KR KR1020177001285A patent/KR102402822B1/en active IP Right Grant
- 2015-08-27 JP JP2016546598A patent/JP6741214B2/en active Active
- 2015-08-27 CN CN201580038593.3A patent/CN106660855A/en active Pending
- 2015-08-28 TW TW104128245A patent/TWI671271B/en active
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- 2020-05-13 JP JP2020084509A patent/JP6892000B2/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110831908A (en) * | 2017-07-26 | 2020-02-21 | 日本电气硝子株式会社 | Supporting glass substrate and laminated substrate using same |
| CN110944953A (en) * | 2017-07-26 | 2020-03-31 | Ａｇｃ株式会社 | Supporting glass for semiconductor package |
| CN111741933A (en) * | 2018-02-20 | 2020-10-02 | 日本电气硝子株式会社 | Glass |
| CN111741933B (en) * | 2018-02-20 | 2023-05-16 | 日本电气硝子株式会社 | Glass |
| CN111285603A (en) * | 2018-12-07 | 2020-06-16 | 日本电气硝子株式会社 | Glass |
| CN111285603B (en) * | 2018-12-07 | 2023-08-22 | 日本电气硝子株式会社 | Glass |
| CN111056752A (en) * | 2019-12-18 | 2020-04-24 | 东旭集团有限公司 | Glass substrate assembly for display panel and method for manufacturing glass substrate assembly |
| CN111056752B (en) * | 2019-12-18 | 2023-12-22 | 东旭集团有限公司 | Glass substrate assembly for display panel and method for manufacturing glass substrate assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201620849A (en) | 2016-06-16 |
| JP6741214B2 (en) | 2020-08-19 |
| JPWO2016035674A1 (en) | 2017-06-15 |
| CN115108719A (en) | 2022-09-27 |
| JP6892000B2 (en) | 2021-06-18 |
| TWI671271B (en) | 2019-09-11 |
| JP6963219B2 (en) | 2021-11-05 |
| KR102402822B1 (en) | 2022-05-27 |
| WO2016035674A1 (en) | 2016-03-10 |
| KR20170048315A (en) | 2017-05-08 |
| JP2020128337A (en) | 2020-08-27 |
| JP2020128338A (en) | 2020-08-27 |
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