JP2018095514A - Glass support substrate and laminate using same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a support glass substrate that prevents cracking during the transportation of a laminate in a production process of a fan out-type WLP.SOLUTION: The glass support substrate according to the present invention is for supporting a substrate to be processed, and is characterized by containing, as a glass composition, in mass%, SiOof 50-75%, AlOof 1 to less than 10.5%, BOof 1 to 15%, NaO of 5 to 25%, KO of 0 to 10%, MgO of 1 to 10%, and ZnO 0 to 6%, and having a crack resistance of 500 gf or more.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a supporting glass substrate for supporting a processed substrate and a laminate using the same, and specifically, a supporting glass substrate used for supporting a processed substrate in a manufacturing process of a semiconductor package (semiconductor device) and the same. It relates to the laminate used.

  Mobile electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance) are required to be smaller and lighter. Along with this, the mounting space of semiconductor chips used in these electronic devices is also strictly limited, and high-density mounting of semiconductor chips has become a problem. Therefore, in recent years, high-density mounting of semiconductor packages has been achieved by three-dimensional mounting technology, that is, by stacking semiconductor chips and interconnecting the semiconductor chips.

  In addition, a conventional wafer level package (WLP) is manufactured by forming bumps in a wafer state and then dicing them into individual pieces. However, in the conventional WLP, in addition to the difficulty of increasing the number of pins, since the back surface of the semiconductor chip is mounted, the semiconductor chip is likely to be chipped.

  Therefore, a fan-out type WLP has been proposed as a new WLP. The fan-out type WLP can increase the number of pins, and can prevent chipping of the semiconductor chip by protecting the end portion of the semiconductor chip.

  In the fan-out type WLP, for example, after arranging a plurality of semiconductor chips on a supporting glass substrate, molding with a resin sealing material to form a processed substrate, wiring to one surface of the processed substrate And a step of forming solder bumps.

  By the way, the laminated body including the processed substrate and the supporting glass substrate is transported in the horizontal direction in a state where the supporting glass substrate side is in contact with the transporting conveyor in the manufacturing process of the fan-out type WLP. Further, the transfer is performed while the edge of the supporting glass substrate is held by a robot arm or the like.

  However, the support glass substrate is easily subjected to a mechanical impact from the transfer conveyor or the robot arm when the stacked body is transferred. When the supporting glass substrate receives a mechanical impact, a crack is generated in the supporting glass substrate, and the supporting glass substrate may be damaged starting from the crack.

  This invention is made | formed in view of the said situation, The technical subject is creating the support glass board | substrate which a crack is hard to produce at the time of conveyance of a laminated body in the manufacturing process of a fanout type | mold WLP.

As a result of repeating various experiments, the inventor adopted alkali aluminosilicate glass as a supporting glass substrate, and strictly controlled the glass composition range of the alkali aluminosilicate glass to increase the crack resistance. It is found that the technical problem can be solved and is proposed as the present invention. That is, the supporting glass substrate of the present invention is a supporting glass substrate for supporting a processed substrate, and has a glass composition of mass%, SiO ₂ 50 to 75%, Al ₂ O ₃ 1 to less than 10.5%. _{, B 2 O 3 1~15%,} Na 2 O 5~25%, K 2 O 0~10%, MgO 1~10%, contains Less than six% ZnO, and that crack resistance is more 500gf It is characterized by. Here, “crack resistance” refers to a load with a crack occurrence rate of 50%. “Crack occurrence rate” refers to a value measured as follows. First, in a constant temperature and humidity chamber maintained at a humidity of 30% and a temperature of 25 ° C., a Vickers indenter set to a predetermined load is driven into the glass surface (optical polishing surface) for 15 seconds, and 15 seconds later, it is generated from the four corners of the indentation. Count the number of cracks (maximum 4 per indentation). Thus, after indenting the indenter 20 times and determining the total number of cracks generated, the total number of cracks generated is calculated by the formula of (total cracks generated / 80) × 100. As a crack resistance measuring apparatus, for example, a Multi-Vickers hardness meter FLC-50VX manufactured by Futuretec Corporation can be used.

Secondly, the supporting glass substrate of the present invention has a glass composition, in _mass%, SiO 2 _{60~70%, Al} less than _{2 O 3 5~10.5%, B 2} O 3 5 super to 15%, Na ₂ O 5-18%, K ₂ O 0-1.9%, MgO 1-5%, ZnO 0.5-3% are contained, and it is preferable that crack resistance is 1000 gf or more.

Third, the support glass substrate of the present invention preferably has an average linear thermal expansion coefficient in the temperature range of 20 to 220 ° C. of 40 × 10 ⁻⁷ / ° C. or more and 120 × 10 ⁻⁷ / ° C. or less. If it does in this way, when the ratio of a semiconductor chip and a sealing material will be changed in a processed substrate, it will become easy to match | combine the thermal expansion coefficient of a processed substrate and a support glass substrate exactly | strictly. When the thermal expansion coefficients of the two match, it becomes easy to suppress a dimensional change (particularly warp deformation) of the processed substrate during processing. As a result, wiring on one surface of the processed substrate can be performed with high density, and solder bumps can be accurately formed. Here, the “average linear thermal expansion coefficient in the temperature range of 20 to 220 ° C.” can be measured with a dilatometer.

Fourth, the support glass substrate of the present invention preferably has an average linear thermal expansion coefficient in the temperature range of 20 to 260 ° C. of 40 × 10 ⁻⁷ / ° C. or more and 120 × 10 ⁻⁷ / ° C. or less. Here, the “average linear thermal expansion coefficient in the temperature range of 20 to 260 ° C.” can be measured with a dilatometer.

Fifth, the support glass substrate of the present invention preferably has an average linear thermal expansion coefficient of 42 × 10 ⁻⁷ / ° C. or more and 125 × 10 ⁻⁷ / ° C. or less in a temperature range of 30 to 380 ° C. Here, the “average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C.” can be measured with a dilatometer.

  Sixth, the support glass substrate of the present invention has a wafer shape or a substantially disc shape with a diameter of 100 to 500 mm, a plate thickness of less than 2.0 mm, and an overall plate thickness deviation (TTV) of 5 μm or less. In addition, the amount of warpage is preferably 60 μm or less. Here, the “warp amount” refers to the sum of the absolute value of the maximum distance between the highest point and the least square focal plane in the entire supporting glass substrate and the absolute value of the lowest point and the least square focal plane. For example, it can be measured by a Bow / Warp measuring device SBW-331M / Ld manufactured by Kobelco Kaken.

  Seventh, the laminate of the present invention is a laminate comprising at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and the supporting glass substrate is preferably the supporting glass substrate.

  Eighth, in the laminate of the present invention, it is preferable that the processed substrate includes a semiconductor chip molded with at least a sealing material.

  Ninthly, the method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and a step of performing a processing process on the processed substrate. It is preferable that the supporting glass substrate is the above supporting glass substrate.

  10thly, it is preferable that the manufacturing method of the semiconductor package of this invention includes the process of wiring to one surface of a process board | substrate.

  Eleventhly, in the semiconductor package manufacturing method of the present invention, it is preferable that the processing includes a step of forming solder bumps on one surface of the processed substrate.

  12thly, it is preferable that the semiconductor package of this invention was produced by the manufacturing method of said semiconductor package.

  13thly, the electronic device of this invention is an electronic device provided with a semiconductor package, Comprising: It is preferable that a semiconductor package is said semiconductor package.

Fourteenth, the glass substrate of the present invention has, as a glass composition, mass%, SiO ₂ 50 to 75%, Al ₂ O ₃ 1 to less than 10.5%, B ₂ O ₃ 1 to 15%, Na _2. It contains O 5 to 25%, K ₂ O 0 to 10%, MgO 1 to 10%, ZnO 0 to 6%, and has a crack resistance of 500 gf or more.

Fifteenth, the glass substrate of the present invention has a glass composition, in _mass%, SiO 2 _{60~70%, Al} less than _{2 O 3 5~10.5%, B 2} O 3 5 super to 15%, Na ₂ O 5-18%, K ₂ O 0-1.9%, MgO 1-5%, ZnO 0.5-3% are contained, and it is preferable that crack resistance is 1000 gf or more.

It is a conceptual perspective view which shows an example of the laminated body of this invention. It is a conceptual sectional view showing a manufacturing process of a fan out type WLP. It is an upper conceptual diagram which shows an example of the support glass substrate of this invention. FIG. 4 is a conceptual cross-sectional view in the A-A ′ direction of FIG.

The supporting glass substrate of the present invention has a glass composition of 50% by mass, SiO ₂ 50 to 75%, Al ₂ O ₃ 1 to less than 10.5%, B ₂ O ₃ 1 to 15%, Na ₂ O 5 to 25. _{%, K 2 O 0~10%,} MgO 1~10%, characterized in that it contains Less than six% ZnO. The reason for limiting the content of each component as described above will be described below. In addition, in description of content of each component,% display represents the mass%.

SiO ₂ is a main component that forms a glass skeleton. When the content of SiO ₂ is too small, the Young's modulus, acid resistance tends to decrease. However, if the content of SiO ₂ is too large, the high-temperature viscosity becomes high, and the meltability and moldability are likely to be lowered. In addition, devitrification crystals such as cristobalite are liable to precipitate, and the liquidus temperature is increased. It becomes easy to rise. Therefore, the lower limit range of SiO ₂ is 50% or more, preferably 52% or more, particularly 55% or more, and the upper limit range is 75% or less, preferably 73% or less, 72% or less, particularly 70% or less. When priority is given to meltability, it is 69% or less, 68% or less, particularly 67% or less.

Al ₂ O ₃ is a component that improves weather resistance. It is a component that suppresses phase separation and devitrification. However, when the content of Al ₂ O ₃ is too large, the higher the viscosity at high temperature moldability and meltability tends to decrease. Therefore, the lower limit range of Al ₂ O ₃ is 1% or more, preferably 3% or more, 5% or more, particularly 6% or more, and the upper limit range is less than 10.5%, preferably 10% or less. Or when priority is given to moldability, it is 9.5% or less, particularly 9% or less.

B ₂ O ₃ is a component that enhances meltability and devitrification resistance, and is a component that improves ease of scratching. However, when the content of B ₂ O ₃ is too large, the Young's modulus and acid resistance is likely to decrease. Therefore, the lower limit range of B ₂ O ₃ is 1% or more, preferably 3% or more, more than 5%, 6% or more, 7% or more, particularly 8% or more, and the upper limit range is 15% or less, Preferably they are 14% or less, 13% or less, 12% or less, especially 11% or less.

Na ₂ O is an important component for adjusting the thermal expansion coefficient, and is a component that contributes to the initial melting of the glass raw material. However, when the content of Na 2 _O is too large, there is a concern that the thermal expansion coefficient becomes unduly high. Accordingly, the lower limit range of Na ₂ O is 5% or more, preferably 6% or more, 7% or more, 8% or more, particularly 9% or more, and the upper limit range is 25% or less, preferably 23% or less, 20% or less, particularly 18% or less.

K ₂ O is a component for adjusting the thermal expansion coefficient, and is a component that contributes to the initial melting of the glass raw material. However, if the content of K ₂ O is too large, the thermal expansion coefficient may be unduly high. Therefore, the content of K ₂ O is 0 to 10%, preferably 0 to 6%, 0 to 3%, 0.1 to 1.9%, particularly less than 0.1 to 1%.

  MgO is a component that increases crack resistance. In addition, it is a component that lowers the high-temperature viscosity and increases the meltability, and among the alkaline earth metal oxides, it is a component that significantly increases the Young's modulus. However, when the content of MgO increases, the devitrification resistance tends to decrease. Therefore, the content of MgO is 1 to 10%, preferably 1 to 6%, 1 to 5%, 2 to 4%, particularly less than 3 to 4%.

The mass ratio (B ₂ O ₃ + MgO) / (Na ₂ O + K ₂ O) is preferably 0.7 or more, 0.8 or more, particularly 0.9 or more. If the mass ratio (B ₂ O ₃ + MgO) / (Na ₂ O + K ₂ O) is too small, the crack resistance is reduced or the scratch is easily damaged, and the supporting glass substrate is easily damaged by the crack. “(B ₂ O ₃ + MgO) / (Na ₂ O + K ₂ O)” is a value obtained by dividing the total amount of B ₂ O ₃ and MgO by the total amount of Na ₂ O and K ₂ O.

  ZnO is a component that lowers the high-temperature viscosity and remarkably improves the meltability and moldability, and also increases the weather resistance. However, when there is too much content of ZnO, it will become easy to devitrify glass. Therefore, the content of ZnO is 0 to 5%, preferably 0 to 4%, 0.1 to 3%, particularly 0.3 to 2%.

The mass ratio ZnO / (Na ₂ O + K ₂ O) is preferably 0.05 or more, 0.07 or more, particularly 0.09 or more. When the mass ratio ZnO / (Na ₂ O + K ₂ O) is too small, the weather resistance tends to be lowered. “ZnO / (Na ₂ O + K ₂ O)” is a value obtained by dividing the content of ZnO by the total amount of Na ₂ O and K ₂ O.

  In addition to the above components, other components may be introduced as optional components. In addition, the content of other components other than the above components is 25% or less, 20% or less, 15% or less, 10% or less, particularly 5% or less in total, from the viewpoint of accurately enjoying the effects of the present invention. preferable.

Li ₂ O is a component that lowers the high-temperature viscosity and remarkably increases meltability moldability. It is also a component that increases Young's modulus. However, when the content of Li 2 _O is too large, easily glass devitrified. Therefore, the content of Li ₂ O is preferably 0 to 7%, 0 to 3%, 0 to 1%, 0 to 0.1%, particularly 0 to 0.01%.

  CaO is a component that lowers the high temperature viscosity and increases the meltable formability. Further, among the alkaline earth metal oxides, since the introduced raw material is relatively inexpensive, it is a component that lowers the raw material cost. However, when there is too much content of CaO, it will become easy to devitrify glass. Therefore, the content of CaO is preferably 0 to 10%, 1 to 8%, 3 to 8%, 2 to 6%, particularly 2 to 5%.

  SrO is a component that suppresses phase separation and is a component that improves devitrification resistance. However, when there is too much content of SrO, it will become easy to devitrify glass. Therefore, the content of SrO is preferably 0 to 20%, 0 to 15%, 0 to 9%, 0 to 5%, 0 to 4%, 0 to 3%, 0 to 2%, particularly 0 to 1%. Is less than.

  BaO is a component that increases devitrification resistance. However, when there is too much content of BaO, it will become easy to devitrify glass. Therefore, the content of BaO is preferably 0 to 20%, 0 to 14%, 0 to 9%, 0 to 5%, 0 to 4%, 0 to 3%, 0 to 2%, particularly 0 to 1%. Is less than.

Fe ₂ O ₃ is a component that can be introduced as an impurity component or a fining agent component. However, if the content of Fe ₂ O ₃ is too large, there is a possibility that the ultraviolet transmission is reduced. That is, when the content of Fe ₂ O ₃ is too large, the resin layer, via a release layer, it may be appropriately performed adhesion and detachment of the processing substrate and the supporting glass substrate becomes difficult. Therefore, the content of Fe ₂ O ₃ is preferably 0.05% or less, 0.03% or less, 0.001 to 0.02%, particularly 0.005 to 0.01%. Note that “Fe ₂ O ₃ ” referred to in the present invention includes divalent iron oxide and trivalent iron oxide, and the divalent iron oxide is handled in terms of Fe ₂ O ₃ . Similarly, other oxides are handled based on the indicated oxide.

As ₂ O ₃ acts effectively as a fining agent, but it is preferable to reduce these components as much as possible from an environmental point of view. The content of As ₂ O ₃ is preferably 1% or less, 0.5% or less, particularly 0.1% or less, and it is desirable not to contain it substantially. Here, “substantially does not contain As ₂ O ₃ ” refers to the case where the content of As ₂ O ₃ in the glass composition is less than 0.05%.

Sb ₂ O ₃ is a component having a good clarification action in a low temperature range. The content of Sb ₂ O ₃ is preferably 0 to 1%, 0.001 to 1%, 0.01 to 0.9%, particularly 0.05 to 0.7%. When the content of Sb ₂ O ₃ is too large, the glass tends to color.

SnO ₂ is a component having a good clarification action in a high temperature region and a component that lowers the high temperature viscosity. The content of SnO ₂ is preferably 0 to 1%, 0.001 to 1%, 0.01 to 0.9%, particularly 0.05 to 0.7%. When the content of SnO ₂ is too large, the devitrification crystal SnO ₂ is likely to precipitate. Incidentally, when the content of SnO ₂ is too small, it becomes difficult to enjoy the above-mentioned effects.

SO ₃ is a component having a clarification action. The content of SO ₃ is preferably 0 to 1%, 0.001 to 1%, 0.01 to 0.5%, particularly 0.05 to 0.3%. When the content of SO ₃ is too large, SO ₂ reboyl tends to be generated.

Furthermore, as long as the glass properties are not impaired, metal powders such as F, C, Al, Si, etc. may be introduced up to about 1% as fining agents. CeO ₂ or the like can also be introduced up to about 1%, but it is necessary to pay attention to a decrease in the ultraviolet transmittance.

  Cl is a component that promotes melting of the glass. If Cl is introduced into the glass composition, the melting temperature can be lowered and the clarification action can be promoted. As a result, the melting cost can be lowered and the glass production kiln can be easily extended. However, when there is too much Cl content, there is a possibility of corroding the metal parts around the glass manufacturing kiln. Therefore, the Cl content is preferably 3% or less, 1% or less, 0.5% or less, and particularly 0.1% or less.

P ₂ O ₅ is a component that can suppress the precipitation of devitrified crystals. However, when a large amount of P ₂ O ₅ is introduced, the glass is likely to undergo phase separation. Therefore, the content of P ₂ O ₅ is preferably 0 to 2.5%, 0 to 1.5%, 0 to 0.5%, particularly 0 to 0.3%.

TiO ₂ is a component that lowers the high-temperature viscosity and increases the meltability, and also suppresses solarization. However, when a large amount of TiO ₂ is introduced, the glass is colored and the transmittance tends to decrease. Therefore, the content of TiO ₂ is preferably 0 to 5%, 0 to 3%, 0 to 1%, particularly 0 to 0.02%.

ZrO ₂ is a component that improves chemical resistance and Young's modulus. However, when a large amount of ZrO ₂ is introduced, the glass tends to be devitrified, and since the introduced raw material is hardly meltable, unmelted crystalline foreign matter may be mixed into the product substrate. Therefore, the content of ZrO ₂ is preferably 0 to 10%, 0 to 7%, 0 to 5%, 0.001 to 3%, 0.01 to 1%, particularly 0.1 to 0.5%. is there.

Y ₂ O ₃ , Nb ₂ O ₅ , and La ₂ O ₃ have a function of increasing the strain point, Young's modulus, and the like. However, if the content of these components is 5%, especially more than 1%, the raw material cost and product cost may increase.

  The supporting glass substrate of the present invention preferably has the following characteristics.

  The crack resistance is 500 gf or more, preferably 600 gf or more, 700 gf or more, 800 gf or more, 900 gf or more, and particularly 1000 gf or more. If the crack resistance is low, in the manufacturing process of the fan-out type WLP, a crack is generated in the support glass substrate due to a mechanical impact from the transfer conveyor or the robot arm, and the support glass substrate is easily damaged starting from the crack. Become.

The average thermal expansion coefficient in the temperature range of 20 to 220 ° C. is preferably 40 × 10 ⁻⁷ / ° C. or more and 120 × 10 ⁻⁷ / ° C. or less, more preferably more than 50 × 10 ⁻⁷ / ° C. and 110 ×. 10 ⁻⁷ / ° C. or less, more preferably 60 × 10 ⁻⁷ / ° C. or more, and 100 × 10 ⁻⁷ / ° C. or less, particularly preferably 70 × 10 ⁻⁷ / ° C. or more and 95 × 10 ⁻⁷ / ° C. or less. It is. When the average thermal expansion coefficient in the temperature range of 20 to 220 ° C. is outside the above range, the thermal expansion coefficients of the processed substrate and the supporting glass substrate are difficult to match. If the thermal expansion coefficients of the two are mismatched, a dimensional change (particularly warping deformation) of the processed substrate is likely to occur during processing.

The average thermal expansion coefficient in the temperature range of 20 to 260 ° C. is preferably 40 × 10 ⁻⁷ / ° C. or more and 120 × 10 ⁻⁷ / ° C. or less, more preferably more than 50 × 10 ⁻⁷ / ° C. and 110 ×. 10 ⁻⁷ / ° C. or less, more preferably 60 × 10 ⁻⁷ / ° C. or more, and 100 × 10 ⁻⁷ / ° C. or less, particularly preferably 70 × 10 ⁻⁷ / ° C. or more and 95 × 10 ⁻⁷ / ° C. or less. It is. When the average thermal expansion coefficient in the temperature range of 20 to 260 ° C. is outside the above range, the thermal expansion coefficients of the processed substrate and the supporting glass substrate are difficult to match. If the thermal expansion coefficients of the two are mismatched, a dimensional change (particularly warping deformation) of the processed substrate is likely to occur during processing.

The average thermal expansion coefficient in the temperature range of 30 to 380 ° C. is preferably 42 × 10 ⁻⁷ / ° C. or more and 125 × 10 ⁻⁷ / ° C. or less, more preferably more than 50 × 10 ⁻⁷ / ° C. and 110 ×. 10 ⁻⁷ / ° C. or less, more preferably 60 × 10 ⁻⁷ / ° C. or more, and 100 × 10 ⁻⁷ / ° C. or less, particularly preferably 70 × 10 ⁻⁷ / ° C. or more and 95 × 10 ⁻⁷ / ° C. or less. It is. When the average thermal expansion coefficient in the temperature range of 30 to 380 ° C. is outside the above range, the thermal expansion coefficients of the processed substrate and the supporting glass substrate are difficult to match. If the thermal expansion coefficients of the two are mismatched, a dimensional change (particularly warping deformation) of the processed substrate is likely to occur during processing.

The temperature at 10 ^2.5 dPa · s is preferably 1680 ° C. or lower, 1620 ° C. or lower, 1580 ° C. or lower, 1550 ° C. or lower, 1520 ° C. or lower, particularly 1500 ° C. or lower. When the temperature at 10 ^2.5 dPa · s increases, the meltability decreases and the manufacturing cost of the glass substrate increases. Here, “temperature at 10 ^2.5 dPa · s” can be measured by a platinum ball pulling method. The temperature at 10 ^2.5 dPa · s corresponds to the melting temperature, and the lower the temperature, the better the melting property.

  The liquidus temperature is preferably less than 1200 ° C, 1150 ° C or less, 1100 ° C or less, 1050 ° C or less, 1000 ° C or less, 950 ° C or less, 930 ° C or less, particularly 900 ° C or less. The viscosity at the liquidus temperature is preferably 10000 dPa · s or more, 30000 dPa · s or more, 60000 dPa · s or more, 100000 dPa · s or more, 200000 dPa · s or more, 300000 dPa · s or more, 500000 dPa · s or more, 800000 dPa · s or more, particularly It is 1000000 dPa · s or more. In this way, devitrification crystals are less likely to precipitate during molding, and it becomes easy to mold a glass substrate by the downdraw method, particularly the overflow downdraw method. Here, the “liquid phase temperature” is obtained by passing the standard sieve 30 mesh (500 μm) and putting the glass powder remaining on the 50 mesh (300 μm) in a platinum boat, and holding it in a temperature gradient furnace for 24 hours. It can be calculated by measuring the temperature at which precipitation occurs. The “viscosity at the liquidus temperature” can be measured by a platinum ball pulling method. The viscosity at the liquidus temperature is an index of moldability. The higher the viscosity at the liquidus temperature, the better the moldability.

  In the supporting glass substrate of the present invention, the Young's modulus is preferably 65 GPa or more, 68 GPa or more, 70 GPa or more, 72 GPa or more, 73 GPa or more, particularly 74 GPa or more. If the Young's modulus is too low, it is difficult to maintain the rigidity of the laminate, and the processed substrate is likely to be deformed, warped, damaged, and the like. Here, “Young's modulus” refers to a value measured by a bending resonance method.

  The supporting glass substrate of the present invention preferably has the following shape.

  The supporting glass substrate of the present invention preferably has a substantially disc shape or wafer shape, and the diameter is preferably 100 mm to 500 mm, particularly 150 mm to 450 mm. This facilitates application to the manufacturing process of the fan-out type WLP. You may process into other shapes, for example, shapes, such as a rectangle, as needed.

  In the supporting glass substrate of the present invention, the roundness is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, particularly 0.03 mm or less. The smaller the roundness, the easier it is to apply to the fan-out type WLP manufacturing process. The “roundness” is a value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer, excluding the notch portion.

  In the supporting glass substrate of the present invention, the plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, particularly 0.9 mm or less. As the plate thickness decreases, the mass of the laminate becomes lighter, and thus handling properties are improved. On the other hand, if the plate thickness is too thin, the strength of the support glass substrate itself is lowered, and it becomes difficult to perform the function as the support substrate. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, particularly more than 0.7 mm.

  In the supporting glass substrate of the present invention, the total thickness deviation (TTV) is preferably 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, particularly less than 0.1 to 1 μm. The arithmetic average roughness Ra is preferably 20 nm or less, 10 nm or less, 5 nm or less, 2 nm or less, 1 nm or less, particularly 0.5 nm or less. The higher the surface accuracy, the easier it is to improve the processing accuracy. In particular, since the wiring accuracy can be increased, high-density wiring is possible. Further, the strength of the supporting glass substrate is improved, and the supporting glass substrate and the laminate are hardly damaged. Furthermore, the number of reuses of the supporting glass substrate can be increased. The “arithmetic average roughness Ra” can be measured by a stylus type surface roughness meter or an atomic force microscope (AFM).

  The support glass substrate of the present invention is preferably formed by polishing the surface after molding by the overflow downdraw method. If it does in this way, it will become easy to regulate a total board thickness deviation (TTV) to less than 2.0 micrometers, 1.5 micrometers or less, 1.0 micrometers or less, especially less than 0.1-1.0 micrometers.

  In the supporting glass substrate of the present invention, the amount of warp is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 to 45 μm, particularly 5 to 40 μm. The smaller the warp amount, the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be increased, high-density wiring is possible.

  The supporting glass substrate of the present invention preferably has a notch portion (notch-shaped alignment portion), and the deep portion of the notch portion is more preferably substantially circular or substantially V-groove in plan view. This makes it easier to fix the position of the support glass substrate by bringing a positioning member such as a positioning pin into contact with the notch portion of the support glass substrate. As a result, alignment of the supporting glass substrate and the processed substrate is facilitated. In particular, when the notch is formed on the processed substrate and the positioning member is brought into contact with the processed substrate, the alignment of the entire laminate is facilitated. In addition, since a positioning member contacts a notch part, a crack is easy to generate | occur | produce, but since the support glass substrate of this invention has high crack resistance, it is especially effective when it has a notch part.

  When the positioning member is brought into contact with the notch portion of the support glass substrate, stress is easily concentrated on the notch portion, and the support glass substrate is easily damaged starting from the notch portion. In particular, when the supporting glass substrate is bent by an external force, the tendency becomes remarkable. Therefore, in the supporting glass substrate of the present invention, it is preferable that all or part of the edge region where the surface of the notch portion and the end surface intersect is chamfered. As a result, it is possible to effectively avoid damage starting from the notch portion.

  In the supporting glass substrate of the present invention, all or part of the edge region where the surface and the end surface of the notch portion intersect is chamfered, and 50% or more of the edge region where the surface and the end surface of the notch portion intersect each other is chamfered. It is preferable that chamfering is performed, 90% or more of the edge region where the surface and the end surface of the notch portion intersect is more preferably chamfered, and the entire edge region where the surface and the end surface of the notch portion intersect each other is more preferable. More preferably, is chamfered. The larger the chamfered area at the notch, the lower the probability of breakage starting from the notch.

  The chamfering width in the surface direction of the notch portion is preferably 50 to 900 μm, 200 to 800 μm, 300 to 700 μm, 400 to 650 μm, particularly 500 to 600 μm. If the chamfering width in the surface direction of the notch portion is too small, the support glass substrate is easily damaged starting from the notch portion. On the other hand, if the chamfering width in the surface direction of the notch portion is too large, the chamfering efficiency is lowered, and the manufacturing cost of the supporting glass substrate is likely to increase.

  The chamfer width in the plate thickness direction of the notch portion is preferably 5 to 80%, 20 to 75%, 30 to 70%, 35 to 65%, particularly 40 to 60% of the plate thickness. If the chamfer width in the plate thickness direction of the notch portion is too small, the support glass substrate is likely to be damaged starting from the notch portion. On the other hand, if the chamfer width in the plate thickness direction of the notch portion is too large, the external force tends to concentrate on the end surface of the notch portion, and the support glass substrate is likely to be damaged starting from the end surface of the notch portion.

  The supporting glass substrate of the present invention is preferably formed by a downdraw method, particularly an overflow downdraw method. In the overflow down draw method, molten glass overflows from both sides of a heat-resistant bowl-shaped structure, and the overflowed molten glass joins at the lower top end of the bowl-shaped structure and is formed downward to produce a glass substrate. It is a method to do. In the overflow down draw method, the surface to be the surface of the glass substrate is not in contact with the bowl-shaped refractory, and is formed in a free surface state. For this reason, with a small amount of polishing, the overall thickness deviation (TTV) can be reduced to less than 2.0 μm, particularly less than 1.0 μm. As a result, the manufacturing cost of the glass substrate can be reduced.

  The supporting glass substrate of the present invention is preferably not subjected to ion exchange treatment, and preferably has no compressive stress layer on the surface. When the ion exchange treatment is performed, the manufacturing cost of the supporting glass substrate increases, but when the ion exchange processing is not performed, the manufacturing cost of the supporting glass substrate can be reduced. Further, if the ion exchange process is performed, it becomes difficult to reduce the total thickness deviation (TTV) of the supporting glass substrate, but if the ion exchange process is not performed, such a problem is easily solved. In addition, the support glass substrate of this invention does not exclude the aspect which performs an ion exchange process and forms a compressive-stress layer in the surface. Focusing only on the viewpoint of increasing the mechanical strength, it is preferable to perform ion exchange treatment and form a compressive stress layer on the surface.

  The laminate of the present invention is a laminate comprising at least a processed substrate and a supporting glass substrate for supporting the processed substrate, wherein the supporting glass substrate is the above-described supporting glass substrate. The laminate of the present invention preferably has an adhesive layer between the processed substrate and the supporting glass substrate. The adhesive layer is preferably a resin, for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like. Further, those having heat resistance that can withstand heat treatment in the manufacturing process of the fan-out type WLP are preferable. This makes it difficult for the adhesive layer to melt in the manufacturing process of the fan-out type WLP, thereby improving the accuracy of the processing. In addition, in order to fix a process substrate and a support glass substrate easily, an ultraviolet curable tape can also be used as an adhesive layer.

  The laminate of the present invention further has a release layer between the processed substrate and the supporting glass substrate, more specifically between the processed substrate and the adhesive layer, or between the supporting glass substrate and the adhesive layer. It is preferable to have a layer. If it does in this way, it will become easy to peel a processed substrate from a support glass substrate, after performing predetermined processing processing to a processed substrate. Peeling of the processed substrate is preferably performed with irradiation light such as laser light from the viewpoint of productivity. As the laser light source, an infrared laser light source such as a YAG laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 to 1300 nm) can be used. In addition, a resin that decomposes when irradiated with an infrared laser can be used for the release layer. A substance that efficiently absorbs infrared rays and converts it into heat can also be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment or the like can be added to the resin.

  The peeling layer is made of a material that causes “in-layer peeling” or “interfacial peeling” by irradiation light such as laser light. That is, when light of a certain intensity is irradiated, the bonding force between atoms or molecules in an atom or molecule disappears or decreases, and ablation or the like is caused to cause peeling. In addition, when the component contained in the release layer is released as a gas due to irradiation of irradiation light, the separation layer is released, and when the release layer absorbs light and becomes a gas, and its vapor is released, resulting in separation There is.

  In the laminate of the present invention, the supporting glass substrate is preferably larger than the processed substrate. Thereby, when supporting a process substrate and a support glass substrate, even if the center position of both is slightly separated, the edge part of a process substrate becomes difficult to protrude from a support glass substrate.

  The method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and a step of processing the processed substrate. In addition, the supporting glass substrate is the above supporting glass substrate.

  It is preferable that the manufacturing method of the semiconductor package of this invention has the process of conveying a laminated body further. Thereby, the processing efficiency of a processing process can be improved. Note that the “process for transporting the laminate” and the “process for processing the processed substrate” do not need to be performed separately and may be performed simultaneously.

  In the method for manufacturing a semiconductor package of the present invention, the processing is preferably performed by wiring on one surface of the processed substrate or forming solder bumps on one surface of the processed substrate. In the method for manufacturing a semiconductor package of the present invention, since the processed substrate is difficult to change in dimensions during these processes, these steps can be appropriately performed.

  In addition to the above, as a processing treatment, one surface of a processed substrate (usually the surface opposite to the supporting glass substrate) is mechanically polished, and one surface of the processed substrate (usually a supporting glass substrate) Either a process of dry-etching the surface on the opposite side or a process of wet-etching one surface of the processed substrate (usually the surface opposite to the supporting glass substrate) may be used. In the semiconductor package manufacturing method of the present invention, the processed substrate is unlikely to warp and the rigidity of the stacked body can be maintained. As a result, the above processing can be performed appropriately.

  The present invention will be further described with reference to the drawings.

  FIG. 1 is a conceptual perspective view showing an example of a laminate 1 of the present invention. In FIG. 1, the laminate 1 includes a supporting glass substrate 10 and a processed substrate 11. The supporting glass substrate 10 is attached to the processed substrate 11 in order to prevent a dimensional change of the processed substrate 11. A release layer 12 and an adhesive layer 13 are disposed between the support glass substrate 10 and the processed substrate 11. The peeling layer 12 is in contact with the supporting glass substrate 10, and the adhesive layer 13 is in contact with the processed substrate 11.

  That is, the laminated body 1 is laminated and disposed in the order of the supporting glass substrate 10, the release layer 12, the adhesive layer 13, and the processed substrate 11. Although the shape of the support glass substrate 10 is determined according to the processed substrate 11, in FIG. 1, the shapes of the support glass substrate 10 and the processed substrate 11 are both substantially disk shapes. For the release layer 12, for example, a resin that decomposes when irradiated with a laser can be used. A substance that efficiently absorbs laser light and converts it into heat can also be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment and the like. The release layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like. The adhesive layer 13 is made of a resin, and is applied and formed by, for example, various printing methods, inkjet methods, spin coating methods, roll coating methods, and the like. An ultraviolet curable tape can also be used. The adhesive layer 13 is removed by dissolution with a solvent or the like after the supporting glass substrate 10 is peeled from the processed substrate 11 by the peeling layer 12. The ultraviolet curable tape can be removed with a peeling tape after being irradiated with ultraviolet rays.

  FIG. 2 is a conceptual cross-sectional view showing a manufacturing process of a fan-out type WLP. FIG. 2A shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. A peeling layer may be formed between the support member 20 and the adhesive layer 21 as necessary. Next, as shown in FIG. 2B, a plurality of semiconductor chips 22 are pasted on the adhesive layer 21. At that time, the surface on the active side of the semiconductor chip 22 is brought into contact with the adhesive layer 21. Next, as shown in FIG. 2C, the semiconductor chip 22 is molded with a resin sealing material 23. The sealing material 23 is made of a material having little dimensional change after compression molding and little dimensional change when forming a wiring. Subsequently, as shown in FIGS. 2D and 2E, after separating the processed substrate 24 on which the semiconductor chip 22 is molded from the support member 20, the substrate is bonded and fixed to the support glass substrate 26 through the adhesive layer 25. Let At that time, the surface of the processed substrate 24 opposite to the surface on which the semiconductor chip 22 is embedded is disposed on the supporting glass substrate 26 side. In this way, the laminate 27 can be obtained. In addition, you may form a peeling layer between the contact bonding layer 25 and the support glass substrate 26 as needed. Further, after the obtained laminated body 27 is conveyed, as shown in FIG. 2 (f), a wiring 28 is formed on the surface of the processed substrate 24 where the semiconductor chip 22 is embedded, and then a plurality of solder bumps 29 are formed. Form. Finally, after separating the processed substrate 24 from the supporting glass substrate 26, the processed substrate 24 is cut for each semiconductor chip 22 and used for a subsequent packaging step (FIG. 2G).

  FIG. 3 is an upper conceptual view showing an example of the supporting glass substrate of the present invention. As shown in FIG. 3A, the outer shape of the support glass substrate 31 is a substantially perfect wafer. The outer shape of the support glass substrate 31 includes a notch portion 32 and an outer shape portion 33 that occupies an outer shape region other than the notch portion 32. The notch portion 32 has a notch shape, that is, a shape having a depression. The notch-shaped deep portion 34 has a substantially circular shape that is rounded in plan view, and the boundary between the notch portion 32 and the outer shape portion 33 is also a substantially circular shape that is rounded. As shown in FIG. 3B, the outer shape of the support glass substrate 35 is a substantially circular wafer. Further, the outer shape of the support glass substrate 35 includes a notch portion 36 and an outer shape portion 37 that occupies an outer shape region other than the notch portion 36. The notch portion 36 of the support glass substrate 35 has a notch shape, and the deep portion 38 of the notch shape has a substantially V-groove shape.

  FIG. 4 is a conceptual cross-sectional view in the A-A ′ direction of FIG. As shown in FIG. 4, chamfered surfaces 42 and 43 are provided in an edge region where the surfaces 39 and 40 and the end surface 41 of the supporting glass substrate 31 intersect with each other. The chamfering width X in the surface 39, 40 direction of the supporting glass substrate 31 is 50 to 900 μm, for example, and the chamfering width Y + Y ′ in the plate thickness direction of the supporting glass substrate 31 is 20 to 80% of the plate thickness t, for example. Yes. The end face 41 and the chamfered surfaces 41 and 42 are connected in a continuously rounded state, and the surfaces 39 and 40 and the chamfered surfaces 42 and 43 are connected in a continuously rounded state. doing.

Glass substrates of the present invention has a glass composition, in _mass%, SiO 2 _{50~75%, Al} less than _{2 O 3 1~10.5%, B 2} O 3 1~15%, Na 2 O 5~25% , K ₂ O 0 to 10%, MgO 1 to 10%, ZnO 0 to 6%, and a crack resistance of 500 gf or more. Since the glass substrate of the present invention has the same technical characteristics (preferred glass composition, glass characteristics and shape) as the supporting glass substrate of the present invention, detailed description thereof is omitted in this specification.

  Since the glass substrate of the present invention has high crack resistance, it is suitable for applications other than the supporting glass substrate for supporting the processed substrate, and is particularly suitable for applications where cracks are not allowed to occur. For example, suitable for a cover glass of a semiconductor package containing a laser diode, a cover glass of a semiconductor package containing a solid-state imaging device, a cover glass of a solar cell, and a carrier glass for placing and transporting a glass film having a thickness of less than 200 μm It is.

  Hereinafter, the present invention will be described based on examples. The following examples are merely illustrative. The present invention is not limited to the following examples.

  Table 1 shows examples of the present invention (sample Nos. 1 to 22). Table 2 shows comparative examples (sample Nos. 23 to 37) of the present invention.

First, a glass batch in which glass raw materials were prepared so as to have the glass composition in the table was put in a platinum crucible and melted at 1400 ° C. for 4 hours. In melting the glass batch, the mixture was stirred and homogenized using a platinum stirrer. Next, the molten glass was poured out on a carbon plate, formed into a plate shape, and then gradually cooled from a temperature about 20 ° C. higher than the annealing point to room temperature at 3 ° C./min. About each obtained sample, crack resistance, average thermal expansion coefficient (alpha) _20-200 in the temperature range of 20-200 _degreeC , average thermal expansion coefficient (alpha) _20-220 in the temperature range of _20-220 degreeC, temperature of _20-260 degreeC Average thermal expansion coefficient α _{20 to 260 in} the range, average thermal expansion coefficient α _{30 to 380} in the temperature range of 30 to 380 ° C., density, strain point Ps, annealing point Ta, softening point Ts, high temperature viscosity 10 ^4.0 dPa · Temperature at s, temperature at high temperature viscosity of 10 ^3.0 dPa · s, temperature at high temperature viscosity of 10 ^2.5 dPa · s, liquid phase temperature TL, viscosity η at liquid phase temperature TL, Young's modulus, rigidity and Poisson's ratio Evaluated.

  The crack resistance refers to a load at which the crack occurrence rate is 50%, and the crack occurrence rate was measured as follows. First, in a constant temperature and humidity chamber maintained at a humidity of 30% and a temperature of 25 ° C., a Vickers indenter set to a predetermined load is driven into the glass surface (optical polishing surface) for 15 seconds, and 15 seconds later, it is generated from the four corners of the indentation. Count the number of cracks (maximum 4 per indentation). Thus, after indenting 20 times and calculating | requiring the total number of crack generation, it calculated | required by the formula of (total number of crack generation / 80) x100.

  The average coefficient of thermal expansion in the above temperature range is a value measured with a dilatometer.

  The density is a value measured by a well-known Archimedes method.

  The strain point Ps, the annealing point Ta, and the softening point Ts are values measured based on the method of ASTM C336.

The temperatures at high temperature viscosities of 10 ^4.0 dPa · s, 10 ^3.0 dPa · s and 10 ^2.5 dPa · s are values measured by the platinum ball pulling method.

  The liquid phase temperature TL is the temperature at which crystals pass after passing through a standard sieve 30 mesh (500 μm), putting the glass powder remaining on 50 mesh (300 μm) into a platinum boat and holding it in a temperature gradient furnace for 24 hours. It is the value measured by microscopic observation. The viscosity η at the liquidus temperature TL is a value obtained by measuring the viscosity of the glass at the liquidus temperature TL by a platinum ball pulling method.

  Young's modulus, rigidity, and Poisson's ratio refer to values measured by the resonance method.

  As is clear from Table 1, sample No. Nos. 1 to 22 have a crack resistance of 900 to 1704 gf, so that it is considered that cracks are unlikely to occur during transport of the laminate in the manufacturing process of the fan-out type WLP. On the other hand, sample No. In Nos. 23 to 37, the crack resistance is 494 gf or less, so that it is considered that cracks are likely to occur during the transport of the laminate in the manufacturing process of the fan-out type WLP.

  First, the sample Nos. After preparing a glass raw material so that it may become the glass composition of 1-22, it is supplied to a glass melting furnace and is melted at 1400-1500 ° C., and then the molten glass is supplied to an overflow downdraw molding apparatus, Each was shaped so as to be 0.8 mm. About the obtained glass substrate, both surfaces were mechanically polished to reduce the overall thickness deviation (TTV) to less than 1 μm. After processing the obtained glass substrate to φ300 mm × 0.8 mm thickness, both surfaces thereof were polished by a polishing apparatus. Specifically, both surfaces of the glass substrate were sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass substrate were polished while rotating the glass substrate and the pair of polishing pads together. During the polishing process, control was sometimes performed so that a part of the glass substrate protruded from the polishing pad. The polishing pad was made of urethane, the average particle size of the polishing slurry used in the polishing treatment was 2.5 μm, and the polishing rate was 15 m / min. About each obtained glass substrate after a grinding | polishing process, the whole board thickness deviation (TTV) and curvature amount were measured by Bow / Warp measuring apparatus SBW-331ML / d by Kobelco Kaken. As a result, the total thickness deviation (TTV) was 0.85 μm or less and the warpage amount was 35 μm or less, respectively.

1, 27 Laminate 10, 26, 31, 35 Support glass substrate 11, 24 Processing substrate 12 Release layer 13, 21, 25 Adhesive layer 20 Support member 22 Semiconductor chip 23 Sealing material 28 Wiring 29 Solder bump 32, 36 Notch 33, 37 External portions 34, 38 Notch deep portions 39, 40 Surface of support glass substrate 41 End surfaces 42, 43 of support glass substrate Chamfered surface of support glass substrate

Claims (15)

A supporting glass substrate for supporting a processed substrate,
As a glass composition, in _{mass%, SiO 2 50~75%, Al} 2 O 3 less than _{1~10.5%, B 2 O 3 1~15} %, Na 2 O 5~25%, K 2 O 0~10 %, MgO 1 to 10%, ZnO 0 to 6%, and having a crack resistance of 500 gf or more. As a glass composition, in _mass%, SiO 2 _{60~70%, Al} less than _{2 O 3 5~10.5%, B 2} O 3 5 super _{~15%, Na 2 O 5~18%} , K 2 O 0~ The supporting glass substrate according to claim 1, wherein the supporting glass substrate contains 1.9%, MgO 1 to 5%, ZnO 0.5 to 3%, and has a crack resistance of 1000 gf or more. 3. The support glass substrate according to claim 1, wherein an average linear thermal expansion coefficient in a temperature range of 20 to 220 ° C. is 40 × 10 ⁻⁷ / ° C. or more and 120 × 10 ⁻⁷ / ° C. or less. . The average linear thermal expansion coefficient in a temperature range of 20 to 260 ° C is 40 × 10 ^-7 / ° C or more and 120 × 10 ^-7 / ° C or less. Support glass substrate. 5. The average linear thermal expansion coefficient in a temperature range of 30 to 380 ° C. is 42 × 10 ⁻⁷ / ° C. or more and 125 × 10 ⁻⁷ / ° C. or less. Support glass substrate.   It has a wafer shape or a substantially disk shape with a diameter of 100 to 500 mm, a plate thickness of less than 2.0 mm, a total plate thickness deviation (TTV) of 5 μm or less, and a warpage amount of 60 μm or less. The support glass substrate according to any one of claims 1 to 5.   A laminate comprising at least a processed substrate and a supporting glass substrate for supporting the processed substrate, wherein the supporting glass substrate is the supporting glass substrate according to any one of claims 1 to 6. .   The laminate according to claim 7, wherein the processed substrate includes at least a semiconductor chip molded with a sealing material. Preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate;
A method for manufacturing a semiconductor package, comprising: performing a processing on a processed substrate, wherein the supporting glass substrate is the supporting glass substrate according to any one of claims 1 to 6.   The method for manufacturing a semiconductor package according to claim 9, wherein the processing includes a step of wiring on one surface of the processing substrate.   11. The method of manufacturing a semiconductor package according to claim 9, wherein the processing includes a step of forming solder bumps on one surface of the processed substrate.   A semiconductor package manufactured by the method for manufacturing a semiconductor package according to claim 9. An electronic device including a semiconductor package,
An electronic apparatus, wherein the semiconductor package is the semiconductor package according to claim 12. As a glass composition, in _{mass%, SiO 2 50~75%, Al} 2 O 3 less than _{1~10.5%, B 2 O 3 1~15} %, Na 2 O 5~25%, K 2 O 0~10 %, MgO 1 to 10%, ZnO 0 to 6%, and a crack resistance of 500 gf or more. As a glass composition, in _mass%, SiO 2 _{60~70%, Al} less than _{2 O 3 5~10.5%, B 2} O 3 5 super _{~15%, Na 2 O 5~18%} , K 2 O 0~ The glass substrate according to claim 1, comprising 1.9%, MgO 1 to 5%, ZnO 0.5 to 3%, and having a crack resistance of 1000 gf or more.