JP6443668B2 - Support glass substrate and laminate using the same - Google Patents

Description

  The present invention relates to a supporting glass substrate and a laminate using the same, and more specifically to a supporting glass substrate used for supporting a processed substrate in a semiconductor package manufacturing process and a laminate using the same.

  Mobile electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance) are required to be smaller and lighter. Along with this, the mounting space of semiconductor chips used in these electronic devices is also strictly limited, and high-density mounting of semiconductor chips has become a problem. Therefore, in recent years, high-density mounting of semiconductor packages has been achieved by three-dimensional mounting technology, that is, by stacking semiconductor chips and interconnecting the semiconductor chips.

  In addition, a conventional wafer level package (WLP) is manufactured by forming bumps in a wafer state and then dicing them into individual pieces. However, in the conventional WLP, in addition to the difficulty of increasing the number of pins, since the back surface of the semiconductor chip is mounted, the semiconductor chip is likely to be chipped.

  Therefore, a fan-out type WLP has been proposed as a new WLP. The fan-out type WLP can increase the number of pins, and can prevent chipping of the semiconductor chip by protecting the end portion of the semiconductor chip.

  In the fan-out type WLP, a plurality of semiconductor chips are molded with a resin sealing material to form a processed substrate, and then a step of wiring on one surface of the processed substrate, a step of forming solder bumps, and the like are included.

  Since these steps involve a heat treatment at about 200 ° C., the sealing material may be deformed and the processed substrate may change in dimensions. When the dimension of the processed substrate changes, it becomes difficult to perform wiring with high density on one surface of the processed substrate, and it becomes difficult to accurately form solder bumps.

  In order to suppress the dimensional change of the processed substrate, it is effective to use a support substrate for supporting the processed substrate. However, even when a support substrate is used, there is a case where a dimensional change of the processed substrate occurs. In particular, when the ratio of the semiconductor chip is large and the ratio of the sealing material is small in the processed substrate, the dimensional change of the processed substrate is likely to occur.

  The present invention has been made in view of the above circumstances, and the technical problem thereof is that it is difficult to cause a dimensional change of the processed substrate when the ratio of the semiconductor chip is large in the processed substrate and the ratio of the sealing material is small. The idea is to contribute to high-density mounting of semiconductor packages by creating a support substrate and a laminate using the same.

As a result of repeating various experiments, the present inventor has found that the above technical problem can be solved by adopting a glass substrate as a support substrate and strictly regulating the thermal expansion coefficient of the glass substrate. The present invention is proposed. That is, the supporting glass substrate of the present invention has an average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C. of more than 28 × 10 ⁻⁷ / ° C. and less than 50 × 10 ⁻⁷ / ° C. To do. Here, the “average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C.” can be measured with a dilatometer.

  The glass substrate is easy to smooth the surface and has rigidity. Therefore, when a glass substrate is used as the support substrate, the processed substrate can be supported firmly and accurately. In addition, the glass substrate easily transmits light such as ultraviolet light. Therefore, when a glass substrate is used as the support substrate, the processed substrate and the support glass substrate can be easily fixed by providing an adhesive layer or the like. Further, by providing a release layer or the like, the processed substrate and the supporting glass substrate can be easily separated.

Moreover, in the support glass substrate of this invention, the average linear thermal expansion coefficient in the temperature range of 20-200 degreeC is more than 28 * 10 < ^-7 > / degreeC, and is regulated below 50 * 10 < ^-7 > / degreeC. If it does in this way, when the ratio of a semiconductor chip is large in a processed substrate and the ratio of a sealing material is small, it will become easy to match | combine the thermal expansion coefficient of a processed substrate and a support glass substrate. When the thermal expansion coefficients of the two match, it becomes easy to suppress a dimensional change (particularly warp deformation) of the processed substrate during processing. As a result, wiring on one surface of the processed substrate can be performed with high density, and solder bumps can be accurately formed.

Second, the support glass substrate of the present invention has an average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. of more than 30 × 10 ⁻⁷ / ° C. and less than 50 × 10 ⁻⁷ / ° C. Features. Here, the “average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C.” can be measured with a dilatometer.

  Third, the supporting glass substrate of the present invention is preferably used for supporting a processed substrate in a semiconductor package manufacturing process.

Fourth, the supporting glass substrate of the present invention preferably has a Young's modulus of 75 GPa or more. Here, “Young's modulus” refers to a value measured by a bending resonance method. 1 GPa corresponds to approximately 101.9 kgf / mm ² .

Fifth, the supporting glass substrate of the present invention has a glass composition of 50% by mass of SiO ₂ 50-80%, Al ₂ O ₃ 15-25%, B ₂ O ₃ 0-5%, MgO 0-5%. _{, CaO 0~5%, SrO 0~5%} , BaO 0~5%, 0~5% ZnO, Li 2 O + Na 2 O + K 2 O 1~15%, Li 2 O 0~10%, Na 2 O 0~ 5%, K ₂ O 0 to 5%, TiO ₂ 0 to 7%, ZrO ₂ 0 to 7%, P ₂ O ₅ 0 to 10% are preferably contained. If it does in this way, it will become easy to reduce a thermal expansion coefficient, raising Young's modulus. Here, “Li ₂ O + Na ₂ O + K ₂ O” is the total amount of Li ₂ O, Na ₂ O and K ₂ O.

Sixth, the supporting glass substrate of the present invention has a glass composition, in _{mass%, SiO 2 55~70%, Al} 2 O 3 20~25%, B 2 O 3 0~3%, MgO 0~3% , CaO 0-3%, SrO 0-3%, BaO 0-3%, ZnO 0-3%, Li ₂ O + Na ₂ O + K ₂ O 1-10%, Li ₂ O 0-7%, Na ₂ O 0 _{3%, K 2 O 0~3%} , TiO 2 0~5%, ZrO 2 0~5%, preferably contains _P 2 O 5 _0~5%. If it does in this way, it will become easy to reduce a thermal expansion coefficient, raising Young's modulus further.

  Seventh, the supporting glass substrate of the present invention preferably has a thickness of less than 2.0 mm and a thickness deviation of 2 μm or less.

  Eighth, the laminate of the present invention is a laminate comprising at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and the supporting glass substrate is preferably the above supporting glass substrate.

  Ninthly, the method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and a step of performing a processing process on the processed substrate. It is preferable that the supporting glass substrate is the above supporting glass substrate.

  10thly, it is preferable that the manufacturing method of the semiconductor package of this invention includes the process of wiring to one surface of a process board | substrate.

  Eleventhly, in the semiconductor package manufacturing method of the present invention, it is preferable that the processing includes a step of forming solder bumps on one surface of the processed substrate.

  12thly, it is preferable that the semiconductor package of this invention was produced by the manufacturing method of said semiconductor package.

  13thly, the electronic device of this invention is an electronic device provided with a semiconductor package, Comprising: It is preferable that a semiconductor package is said semiconductor package.

It is a conceptual perspective view which shows an example of the laminated body of this invention. It is a conceptual sectional view showing a manufacturing process of a fan out type WLP.

In the supporting glass substrate of the present invention, the average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C. is more than 28 × 10 ⁻⁷ / ° C. and less than 50 × 10 ⁻⁷ / ° C., preferably 33 × 10 ^−7. / ° C. or more and 49 × 10 ⁻⁷ / ° C. or less, more preferably 35 × 10 ⁻⁷ / ° C. or more and 45 × 10 ⁻⁷ / ° C. or less, particularly preferably 37 × 10 ⁻⁷ / ° C. or more and 43 × 10 ⁻⁷ / ° C. or less. When the average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C. is outside the above range, the thermal expansion coefficients of the processed substrate and the supporting glass substrate are difficult to match. If the thermal expansion coefficients of the two are mismatched, a dimensional change (particularly warp deformation) of the processed substrate is likely to occur during processing.

The average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is more than 30 × 10 ⁻⁷ / ° C. and less than 50 × 10 ⁻⁷ / ° C., preferably 35 × 10 ⁻⁷ / ° C. or more and 49 × 10 ⁻⁷ / ° C. or lower, particularly preferably 38 × 10 ⁻⁷ / ° C. or higher and 45 × 10 ⁻⁷ / ° C. or lower. When the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is out of the above range, it becomes difficult to match the thermal expansion coefficients of the processed substrate and the supporting glass substrate. If the thermal expansion coefficients of the two are mismatched, a dimensional change (particularly warp deformation) of the processed substrate is likely to occur during processing.

The supporting glass substrate of the present invention has a glass composition of mass%, SiO ₂ 50-80%, Al ₂ O ₃ 15-25%, B ₂ O ₃ 0-5%, MgO 0-5%, CaO 0 _{5%, SrO 0~5%, BaO} 0~5%, 0~5% ZnO, Li 2 O + Na 2 O + K 2 O 1~15%, Li 2 O 0~10%, Na 2 O 0~5%, K _{2 O 0~5%, TiO 2 0~7} %, ZrO 2 0~7%, preferably contains P 2 O 5 0~10%. The reason for limiting the content of each component as described above will be described below. In addition, in description of content of each component,% display represents the mass% unless there is particular notice.

SiO ₂ is a main component that forms a glass skeleton. The content of SiO ₂ is preferably 50 to 80%, 55 to 75%, 58 to 70%, particularly 60 to 68%. When the content of SiO ₂ is too small, the Young's modulus, acid resistance tends to decrease. On the other hand, if the content of SiO ₂ is too large, the high-temperature viscosity becomes high and the meltability tends to decrease, and devitrification crystals such as cristobalite are likely to precipitate, and the liquidus temperature is likely to rise. Become.

Al ₂ O ₃ is a component that enhances the Young's modulus and a component that suppresses phase separation and devitrification. The content of Al ₂ O ₃ is preferably 15 to 25%, 16 to 25%, 17 to 24%, particularly 18 to 23%. When the content of Al ₂ O ₃ is too small, easily Young's modulus is lowered and also the glass phase separation, easily devitrified. On the other hand, when the content of Al ₂ O ₃ is too large, the higher the viscosity at high temperature meltability, moldability tends to decrease.

B ₂ O ₃ is a component that enhances meltability and devitrification resistance, and is a component that improves the ease of scratching and increases strength, but when its content increases, Young's modulus, acid resistance Tends to decrease. Therefore, the content of B ₂ O ₃ is preferably 0 to 5%, 0 to 4%, 0 to 3%, 0 to 2%, 0 to 1%, particularly 0 to 0.1%.

  MgO is a component that lowers the viscosity at high temperature and increases the meltability. Among alkaline earth metal oxides, MgO is a component that significantly increases the Young's modulus, but when its content increases, devitrification resistance increases. It tends to decrease. Therefore, the content of MgO is preferably 0 to 5%, 0 to 4%, 0 to 3%, 0 to 2%, 0 to 1%, particularly 0 to 0.1%.

  CaO is a component that lowers the viscosity at high temperature and increases the meltability, and among the alkaline earth metal oxides, since the introduced raw material is relatively inexpensive, it is a component that lowers the raw material cost. When the content increases, the devitrification resistance tends to be lowered. Therefore, the content of CaO is preferably 0 to 5%, 0 to 4%, 0 to 3%, 0 to 2%, 0 to 1%, particularly 0 to 0.1%.

  SrO is a component that suppresses phase separation and increases devitrification resistance. However, when its content increases, batch cost and thermal expansion coefficient tend to increase. Therefore, the content of SrO is preferably 0 to 5%, 0 to 4%, 0 to 3%, 0 to 2%, 0 to 1%, particularly 0 to 0.1%.

  BaO is a component that enhances devitrification resistance. However, when its content increases, the batch cost and the coefficient of thermal expansion tend to increase. Therefore, the content of BaO is preferably 0 to 5%, 0 to 4%, 0 to 3%, 0 to 2%, 0 to 1%, particularly 0 to 0.1%.

  ZnO is a component that lowers the high-temperature viscosity and increases the meltability, but when its content increases, the devitrification resistance tends to decrease. Therefore, the content of ZnO is preferably 0 to 5%, 0 to 4%, 0 to 3%, 0 to 2%, 0 to 1%, particularly 0 to 0.1%.

Li ₂ O, Na ₂ O and K ₂ O are components that lower the high-temperature viscosity and increase the meltability and moldability. However, if the total amount thereof increases, the thermal expansion coefficient increases unduly, Devitrification tends to decrease. Therefore, the content of Li ₂ O + Na ₂ O + K ₂ O is preferably 1 to 15%, 1 to 10%, 2 to 9%, 3 to 8%, particularly 4 to 7%.

Li ₂ O is a component that significantly increases the meltability and moldability by lowering the high-temperature viscosity, but if its content increases, the thermal expansion coefficient is unduly increased or the devitrification resistance is liable to decrease. Become. Therefore, the content of Li ₂ O is preferably 0 to 10%, 0.1 to 9%, 1 to 8%, 2 to 7%, particularly 3 to 6%.

Na ₂ O is a component that lowers the high-temperature viscosity and increases the meltability. However, when its content is increased, the thermal expansion coefficient is unduly increased or the devitrification resistance is liable to decrease. Therefore, the content of Na ₂ O is preferably 0 to 5%, 0 to 4%, 0 to 3%, 0 to 2%, 0 to 1%, particularly 0 to 0.1%.

K ₂ O is a component that lowers the high-temperature viscosity and increases the meltability. However, when its content is increased, the thermal expansion coefficient is unduly increased or the devitrification resistance is liable to decrease. Therefore, the content of K ₂ O is preferably 0 to 5%, 0 to 4%, 0 to 3%, 0 to 2%, 0 to 1%, particularly 0 to 0.1%.

TiO ₂ is a component that lowers the viscosity at high temperature and increases the meltability, and is a component that suppresses solarization. However, when its content increases, the glass is colored and the transmittance tends to decrease. Therefore, the content of TiO ₂ is preferably 0 to 10%, 0.1 to 7%, 0.5 to 5%, particularly 1 to 3%.

ZrO ₂ is a component that improves chemical resistance and Young's modulus. However, if the content of ZrO ₂ increases, the glass tends to devitrify, and the introduced raw material is difficult to dissolve. May be mixed into the glass substrate. Therefore, the content of ZrO ₂ is preferably 0 to 10%, 0.1 to 7%, 0.5 to 5%, particularly 1 to 3%.

P ₂ O ₅ is a component that can suppress the precipitation of devitrified crystals. However, when the content of P ₂ O ₅ increases, the glass tends to phase-separate. Therefore, the content of P ₂ O ₅ is preferably 0 to 10%, 0.1 to 5%, 0.5 to 3%, particularly 1 to 2%.

  In addition to the above components, other components may be introduced as optional components. In addition, the content of other components other than the above components is preferably 10% or less, and particularly preferably 5% or less in total, from the viewpoint of accurately enjoying the effects of the present invention.

As ₂ O ₃ acts effectively as a fining agent, but from an environmental point of view, it is preferable to reduce this component as much as possible. The content of As ₂ O ₃ is preferably 1% or less, 0.5% or less, particularly 0.1% or less, and it is desirable not to contain it substantially. Here, “substantially does not contain As ₂ O ₃ ” refers to the case where the content of As ₂ O ₃ in the glass composition is less than 0.05%.

Sb ₂ O ₃ is a component having a good clarification action in a low temperature range. The content of Sb ₂ O ₃ is preferably 1% or less, 0.5% or less, particularly 0.1% or less, and it is desirable not to contain it substantially. Here, “substantially does not contain Sb ₂ O ₃ ” refers to a case where the content of Sb ₂ O ₃ in the glass composition is less than 0.05%.

SnO ₂ is a component having a good clarification action in a high temperature region and a component that lowers the high temperature viscosity. The content of SnO ₂ is preferably 0 to 1%, 0.001 to 1%, 0.01 to 0.9%, particularly 0.05 to 0.7%. When the content of SnO ₂ is too large, the devitrification crystal SnO ₂ is likely to precipitate. Incidentally, when the content of SnO ₂ is too small, it becomes difficult to enjoy the above-mentioned effects.

  Cl is a component that promotes melting of the glass. If Cl is introduced into the glass composition, the melting temperature can be lowered and the clarification action can be promoted. As a result, the melting cost can be lowered and the glass production kiln can be easily extended. However, when there is too much Cl content, there is a possibility of corroding the metal parts around the glass manufacturing kiln. Therefore, the Cl content is preferably 1% or less, 0.5% or less, particularly 0.1% or less.

Furthermore, as long as the glass properties are not impaired, metal powders such as F, Cl, SO ₃ , C, Al, Si, etc. may be introduced up to about 1% as fining agents. CeO ₂ or the like can also be introduced up to about 1%, but it is necessary to pay attention to a decrease in the ultraviolet transmittance.

Y ₂ O ₃ , Nb ₂ O ₅ , and La ₂ O ₃ have a function of increasing the strain point, Young's modulus, and the like. However, if the content of these components is 5%, especially more than 1%, the raw material cost and product cost may increase.

  The supporting glass substrate of the present invention preferably has the following characteristics.

  The Young's modulus is preferably 75 GPa or more, 76 GPa or more, 77 GPa or more, and particularly 78 GPa or more. If the Young's modulus is too low, it is difficult to maintain the rigidity of the laminate, and the processed substrate is likely to be deformed, warped, or damaged.

The temperature at 10 ^2.5 dPa · s is preferably 1580 ° C. or lower, 1500 ° C. or lower, 1450 ° C. or lower, 1400 ° C. or lower, 1350 ° C. or lower, particularly 1200 to 1300 ° C. or lower. When the temperature at 10 ^2.5 dPa · s increases, the meltability decreases and the manufacturing cost of the glass substrate increases. Here, “temperature at 10 ^2.5 dPa · s” can be measured by a platinum ball pulling method. The temperature at 10 ^2.5 dPa · s corresponds to the melting temperature, and the lower the temperature, the better the melting property.

  The glass substrate of the present invention preferably has a wafer shape (substantially perfect circle shape), and the diameter is preferably 100 mm or more and 500 mm or less, particularly 150 mm or more and 450 mm or less. In this way, it becomes easy to apply to the manufacturing process of a semiconductor package. You may process into other shapes, for example, shapes, such as a rectangle, as needed.

  In the supporting glass substrate of the present invention, the plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, particularly 0.9 mm or less. As the plate thickness decreases, the mass of the laminate becomes lighter, and thus handling properties are improved. On the other hand, if the plate thickness is too thin, the strength of the support substrate itself is lowered and it becomes difficult to perform the function as the support substrate. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, particularly more than 0.7 mm.

  In the supporting glass substrate of the present invention, the thickness deviation is preferably 2 μm or less, 1 μm or less, and particularly less than 0.1 to 1 μm. The arithmetic average roughness Ra is preferably 100 nm or less, 50 nm or less, 20 nm or less, 10 nm or less, 5 nm or less, 2 nm or less, 1 nm or less, particularly 0.5 nm or less. The higher the surface accuracy, the easier it is to improve the processing accuracy. In particular, since the wiring accuracy can be increased, high-density wiring is possible. Further, the strength of the supporting glass substrate is improved, and the supporting glass substrate and the laminate are hardly damaged. Furthermore, the number of reuses of the supporting glass substrate can be increased. The “arithmetic average roughness Ra” can be measured by a stylus type surface roughness meter or an atomic force microscope (AFM).

  The support glass substrate of the present invention is preferably polished on the surface. If it does in this way, it will become easy to regulate board thickness deviation to 2 micrometers or less, 1 micrometer or less, especially less than 1 micrometer. Various methods can be adopted as a polishing method, and a method of polishing a glass substrate while sandwiching both surfaces of the glass substrate with a pair of polishing pads and rotating the glass substrate and the pair of polishing pads together. Is preferred. Further, the pair of polishing pads preferably have different outer diameters, and it is preferable to perform a polishing process so that a part of the glass substrate protrudes from the polishing pad intermittently during polishing. This makes it easy to reduce the overall plate thickness deviation and to reduce the amount of warpage. In the polishing treatment, the polishing depth is not particularly limited, but the polishing depth is preferably 50 μm or less, 30 μm or less, 20 μm or less, particularly 10 μm or less. As the polishing depth is smaller, the productivity of the glass substrate is improved.

  The supporting glass substrate of the present invention is preferably not subjected to chemical strengthening treatment from the viewpoint of reducing the amount of warpage, and is preferably subjected to chemical strengthening treatment from the viewpoint of mechanical strength. That is, it is preferable not to have a compressive stress layer on the surface from the viewpoint of reducing the amount of warpage, and it is preferable to have a compressive stress layer on the surface from the viewpoint of mechanical strength.

  The laminate of the present invention is a laminate comprising at least a processed substrate and a supporting glass substrate for supporting the processed substrate, wherein the supporting glass substrate is the above-described supporting glass substrate. Here, the technical characteristics (preferable structure and effect) of the laminate of the present invention overlap with the technical characteristics of the support glass substrate of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.

  The laminate of the present invention preferably has an adhesive layer between the processed substrate and the supporting glass substrate. The adhesive layer is preferably a resin, for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like. Moreover, what has the heat resistance which can endure the heat processing in the manufacturing process of a semiconductor package is preferable. Thereby, it becomes difficult to melt | dissolve an adhesive layer in the manufacturing process of a semiconductor package, and the precision of a process can be improved.

  The laminate of the present invention further has a release layer between the processed substrate and the supporting glass substrate, more specifically between the processed substrate and the adhesive layer, or between the supporting glass substrate and the adhesive layer. It is preferable to have a layer. If it does in this way, it will become easy to peel a processed substrate from a support glass substrate, after performing predetermined processing processing to a processed substrate. Peeling of the processed substrate is preferably performed with irradiation light such as laser light from the viewpoint of productivity.

  The peeling layer is made of a material that causes “in-layer peeling” or “interfacial peeling” by irradiation light such as laser light. That is, when light of a certain intensity is irradiated, the bonding force between atoms or molecules in an atom or molecule disappears or decreases, and ablation or the like is caused to cause peeling. In addition, when the component contained in the release layer is released as a gas due to irradiation of irradiation light, the separation layer is released, and when the release layer absorbs light and becomes a gas, and its vapor is released, resulting in separation There is.

  In the laminate of the present invention, the supporting glass substrate is preferably larger than the processed substrate. Thereby, when supporting a process substrate and a support glass substrate, even if the center position of both is slightly separated, the edge part of a process substrate becomes difficult to protrude from a support glass substrate.

  The method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and a step of processing the processed substrate. In addition, the supporting glass substrate is the above supporting glass substrate. Here, the technical characteristics (preferable structure and effect) of the manufacturing method of the semiconductor package of the present invention overlap with the technical characteristics of the supporting glass substrate and the laminate of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.

  The manufacturing method of the semiconductor package of this invention has the process of preparing the laminated body provided with a support glass substrate for supporting a process substrate and a process substrate at least. A laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate has the material configuration described above. As a glass substrate forming method, an overflow down draw method, a slot down method, a redraw method, a float method, a roll out method, or the like can be adopted.

  It is preferable that the manufacturing method of the semiconductor package of this invention has the process of conveying a laminated body further. Thereby, the processing efficiency of a processing process can be improved. Note that the “process for transporting the laminate” and the “process for processing the processed substrate” do not need to be performed separately and may be performed simultaneously.

  In the method for manufacturing a semiconductor package of the present invention, the processing is preferably performed by wiring on one surface of the processed substrate or forming solder bumps on one surface of the processed substrate. In the method for manufacturing a semiconductor package of the present invention, since the processed substrate is difficult to change in dimensions during these processes, these steps can be appropriately performed.

  In addition to the above, as a processing treatment, one surface of a processed substrate (usually the surface opposite to the supporting glass substrate) is mechanically polished, and one surface of the processed substrate (usually a supporting glass substrate) Either a process of dry-etching the surface on the opposite side or a process of wet-etching one surface of the processed substrate (usually the surface opposite to the supporting glass substrate) may be used. In the semiconductor package manufacturing method of the present invention, the processed substrate is unlikely to warp and the rigidity of the stacked body can be maintained. As a result, the above processing can be performed appropriately.

  A semiconductor package of the present invention is manufactured by the above-described semiconductor package manufacturing method. Here, the technical characteristics (preferable configuration and effect) of the semiconductor package of the present invention overlap with the technical characteristics of the manufacturing method of the supporting glass substrate, the laminate, and the semiconductor package of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.

  The electronic device of the present invention is an electronic device including a semiconductor package, and the semiconductor package is the semiconductor package described above. Here, the technical characteristics (preferable configuration and effect) of the electronic device of the present invention overlap with the technical characteristics of the supporting glass substrate, the laminate, the semiconductor package manufacturing method, and the semiconductor package of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.

  The present invention will be further described with reference to the drawings.

  FIG. 1 is a conceptual perspective view showing an example of a laminate 1 of the present invention. In FIG. 1, the laminate 1 includes a supporting glass substrate 10 and a processed substrate 11. The supporting glass substrate 10 is attached to the processed substrate 11 in order to prevent a dimensional change of the processed substrate 11. A release layer 12 and an adhesive layer 13 are disposed between the support glass substrate 10 and the processed substrate 11. The peeling layer 12 is in contact with the supporting glass substrate 10, and the adhesive layer 13 is in contact with the processed substrate 11.

  As can be seen from FIG. 1, the laminate 1 is laminated in the order of the supporting glass substrate 10, the release layer 12, the adhesive layer 13, and the processed substrate 11. Although the shape of the support glass substrate 10 is determined according to the processed substrate 11, in FIG. 1, the shapes of the support glass substrate 10 and the processed substrate 11 are both substantially disk shapes. In addition to amorphous silicon (a-Si), the release layer 12 is made of silicon oxide, a silicate compound, silicon nitride, aluminum nitride, titanium nitride, or the like. The release layer 12 is formed by plasma CVD, spin coating using a sol-gel method, or the like. The adhesive layer 13 is made of a resin, and is applied and formed by, for example, various printing methods, inkjet methods, spin coating methods, roll coating methods, and the like. The adhesive layer 13 is removed by dissolution with a solvent or the like after the supporting glass substrate 10 is peeled from the processed substrate 11 by the peeling layer 12.

  FIG. 2 is a conceptual cross-sectional view showing a manufacturing process of a fan-out type WLP. FIG. 2A shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. A peeling layer may be formed between the support member 20 and the adhesive layer 21 as necessary. Next, as shown in FIG. 2B, a plurality of semiconductor chips 22 are pasted on the adhesive layer 21. At that time, the surface on the active side of the semiconductor chip 22 is brought into contact with the adhesive layer 21. Next, as shown in FIG. 2C, the semiconductor chip 22 is molded with a resin sealing material 23. The sealing material 23 is made of a material having little dimensional change after compression molding and little dimensional change when forming a wiring. Subsequently, as shown in FIGS. 2D and 2E, after separating the processed substrate 24 on which the semiconductor chip 22 is molded from the support member 20, the substrate is bonded and fixed to the support glass substrate 26 through the adhesive layer 25. Let At that time, the surface of the processed substrate 24 opposite to the surface on which the semiconductor chip 22 is embedded is disposed on the supporting glass substrate 26 side. In this way, the laminate 27 can be obtained. In addition, you may form a peeling layer between the contact bonding layer 25 and the support glass substrate 26 as needed. Further, after the obtained laminated body 27 is conveyed, as shown in FIG. 2 (f), a wiring 28 is formed on the surface of the processed substrate 24 where the semiconductor chip 22 is embedded, and then a plurality of solder bumps 29 are formed. Form. Finally, after separating the processed substrate 24 from the support glass substrate 26, the processed substrate 24 is cut for each semiconductor chip 22 and used for a subsequent packaging process.

  Hereinafter, the present invention will be described based on examples. The following examples are merely illustrative. The present invention is not limited to the following examples.

  Table 1 shows examples of the present invention (sample Nos. 1 and 2).

First, a glass batch in which glass raw materials were prepared so as to have the glass composition in the table was put in a platinum crucible and melted at 1700 ° C. for 4 hours. In melting the glass batch, the mixture was stirred and homogenized using a platinum stirrer. Next, the molten glass was poured out on a carbon plate, formed into a plate shape, and then gradually cooled from a temperature about 20 ° C. higher than the annealing point to room temperature at 3 ° C./min. For each sample obtained, the average linear thermal expansion coefficient alpha _{20 to 200} in the temperature range of 20 to 200 ° C., an average linear thermal expansion coefficient alpha _{30 to 380} in the temperature range of 30 to 380 ° C., the density [rho, strain point Ps, The annealing point Ta, the softening point Ts, and the Young's modulus E were evaluated.

Average linear thermal expansion coefficient alpha _{20 to 200} in the temperature range of 20 to 200 ° C., the average linear thermal expansion coefficient alpha _{30 to 380} in the temperature range of 30 to 380 ° C., a value measured by the dilatometer.

  The density ρ is a value measured by the well-known Archimedes method.

  The strain point Ps, the annealing point Ta, and the softening point Ts are values measured by a fiber elongation method (JIS R3103-2: 2001, ISO 7884-6: 1987).

  Young's modulus E refers to a value measured by a resonance method.

As is clear from Table 1, sample No. 1 and 2 have an average linear thermal expansion coefficient α ₂₀ to ₂₀₀ in the temperature range of 20 to 200 ° C. of 37 × 10 ⁻⁷ / ° C. to 41 × 10 ⁻⁷ / ° C. and an average linear heat in the temperature range of 30 to 380 ° C. The expansion coefficient _α30 to ₃₈₀ was 40 × 10 ⁻⁷ / ° C. to 44 × 10 ⁻⁷ / ° C. Therefore, sample no. 1 and 2 are considered to be suitable as supporting glass substrates used for supporting the processed substrate when the ratio of the semiconductor chip is large and the ratio of the sealing material is small in the processed substrate.

  Each sample of [Example 2] was produced as follows. First, the sample Nos. After preparing glass raw materials so that it may become a glass composition of 1 and 2, it supplies to a glass melting furnace, fuse | melts at 1550-1650 degreeC, Then, a molten glass is supplied to a rollout shaping | molding apparatus, and plate | board thickness is set to 0.1. Each was formed to be 7 mm. About the obtained glass substrate, both surfaces were machine-polished and the plate | board thickness deviation was reduced to less than 1 micrometer.

1, 27 Laminated body 10, 26 Support glass substrate 11, 24 Work substrate 12 Peeling layer 13, 21, 25 Adhesive layer 20 Support member 22 Semiconductor chip 23 Sealing material 28 Wiring 29 Solder bump

Claims (11)

The average linear thermal expansion coefficient in a temperature range of 20 to 200 ° C. is the 28 × ^{10 -7} / ℃ greater, and Ri 50 × ^{10 -7} / ℃ less der, and wherein the thickness deviation is 2μm or less Support glass substrate. The average linear thermal expansion coefficient in a temperature range of 30 to 380 ° C. is 30 × ^{10 -7} / ℃ greater, and Ri 50 × ^{10 -7} / ℃ less der, and wherein the thickness deviation is 2μm or less Support glass substrate. 3. The supporting glass substrate according to claim 1, wherein the supporting glass substrate is used for supporting a processed substrate processed in a manufacturing process of a semiconductor package.   The support glass substrate according to any one of claims 1 to 3, wherein Young's modulus is 75 GPa or more. As a glass composition, in _{mass%, SiO 2 50~80%, Al} 2 O 3 15~25%, B 2 O 3 0~5%, 0~5% MgO, CaO 0~5%, SrO 0~5% _{, BaO 0~5%, 0~5% ZnO} , Li 2 O + Na 2 O + K 2 O 1~15%, Li 2 O 0~10%, Na 2 O 0~5%, K 2 O 0~5%, TiO _{2 0~7%, ZrO 2 0~7%} , supporting glass substrate according to any one of claims 1 to 4, characterized in that it contains P 2 O 5 0~10%. As a glass composition, in _{mass%, SiO 2 55~70%, Al} 2 O 3 20~25%, B 2 O 3 0~3%, 0~3% MgO, CaO 0~3%, SrO 0~3% BaO 0-3%, ZnO 0-3%, Li ₂ O + Na ₂ O + K ₂ O 1-10%, Li ₂ O 0-7%, Na ₂ O 0-3%, K ₂ O 0-3%, TiO The support glass substrate according to claim 5, comprising _{20 to} 5%, ZrO ₂ 0 to 5%, and P ₂ O ₅ 0 to 5%. The support glass substrate according to any one of claims 1 to 6, wherein a plate thickness is less than 2.0 mm, and a plate thickness deviation is 1 µm or less.   A laminate comprising at least a processed substrate and a supporting glass substrate for supporting the processed substrate, wherein the supporting glass substrate is the supporting glass substrate according to any one of claims 1 to 7. . Preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate;
A method for manufacturing a semiconductor package, comprising: a step of performing processing on a processed substrate, wherein the supporting glass substrate is the supporting glass substrate according to claim 1.   The method for manufacturing a semiconductor package according to claim 9, wherein the processing includes a step of wiring on one surface of the processing substrate.   11. The method of manufacturing a semiconductor package according to claim 9, wherein the processing includes a step of forming solder bumps on one surface of the processed substrate.