JP2018203544A - Manufacturing method of supporting crystallized glass substrate - Google Patents
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本発明は、支持結晶化ガラス基板の製造方法に関し、具体的には、半導体パッケージの製造工程で加工基板を支持するための支持結晶化ガラス基板の製造方法に関する。 The present invention relates to a method for manufacturing a support crystallized glass substrate, and specifically to a method for manufacturing a support crystallized glass substrate for supporting a processed substrate in a manufacturing process of a semiconductor package.
携帯電話、ノート型パーソナルコンピュータ、ＰＤＡ（Ｐｅｒｓｏｎａｌ Ｄａｔａ Ａｓｓｉｓｔａｎｃｅ）等の携帯型電子機器には、小型化及び軽量化が要求されている。これに伴い、これらの電子機器に用いられる半導体チップの実装スペースも厳しく制限されており、半導体チップの高密度な実装が課題になっている。そこで、近年では、三次元実装技術、すなわち半導体チップ同士を積層し、各半導体チップ間を配線接続することにより、半導体パッケージの高密度実装を図っている。 Mobile electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance) are required to be smaller and lighter. Along with this, the mounting space of semiconductor chips used in these electronic devices is also strictly limited, and high-density mounting of semiconductor chips has become a problem. Therefore, in recent years, high-density mounting of semiconductor packages has been achieved by three-dimensional mounting technology, that is, by stacking semiconductor chips and interconnecting the semiconductor chips.
また、従来のウエハレベルパッケージ（ＷＬＰ）は、バンプをウエハの状態で形成した後、ダイシングで個片化することにより作製されている。しかし、従来のＷＬＰは、ピン数を増加させ難いことに加えて、半導体チップの裏面が露出した状態で実装されるため、半導体チップの欠け等が発生し易いという問題があった。 In addition, a conventional wafer level package (WLP) is manufactured by forming bumps in a wafer state and then dicing them into individual pieces. However, in the conventional WLP, in addition to the difficulty of increasing the number of pins, since the back surface of the semiconductor chip is mounted, the semiconductor chip is likely to be chipped.
そこで、新たなＷＬＰとして、ｆａｎ ｏｕｔ型のＷＬＰが提案されている。ｆａｎ ｏｕｔ型のＷＬＰは、ピン数を増加させることが可能であり、また半導体チップの端部を保護することにより、半導体チップの欠け等を防止することができる。 Therefore, a fan-out type WLP has been proposed as a new WLP. The fan-out type WLP can increase the number of pins, and can prevent chipping of the semiconductor chip by protecting the end portion of the semiconductor chip.
ｆａｎ ｏｕｔ型のＷＬＰでは、複数の半導体チップを樹脂の封止材でモールドして、加工基板を形成した後に、加工基板の一方の表面に配線する工程、半田バンプを形成する工程等を有する。 In the fan-out type WLP, a plurality of semiconductor chips are molded with a resin sealing material to form a processed substrate, and then a step of wiring on one surface of the processed substrate, a step of forming solder bumps, and the like are included.
これらの工程は、約２００℃の熱処理を伴うため、封止材が変形して、加工基板が寸法変化する虞がある。加工基板が寸法変化すると、加工基板の一方の表面に対して、高密度に配線することが困難になり、また半田バンプを正確に形成することも困難になる。 Since these steps involve a heat treatment at about 200 ° C., the sealing material may be deformed and the processed substrate may change in dimensions. When the dimension of the processed substrate changes, it becomes difficult to perform wiring with high density on one surface of the processed substrate, and it becomes difficult to accurately form solder bumps.
このような事情から、加工基板の寸法変化を抑制するために、加工基板を支持するためにガラス基板を用いることが検討されている（特許文献１参照）。 Under such circumstances, in order to suppress the dimensional change of the processed substrate, use of a glass substrate to support the processed substrate has been studied (see Patent Document 1).
ガラス基板は、表面を平滑化し易く、且つ剛性を有する。よって、支持基板としてガラス基板を用いると、加工基板を強固、且つ正確に支持することが可能になる。またガラス基板は、紫外光、赤外光等の光を透過し易い。よって、支持基板としてガラス基板を用い、紫外線硬化型接着剤等により接着層等を設けると、加工基板とガラス基板を容易に固定することができる。更に、赤外線を吸収する剥離層等を設けると、加工基板とガラス基板を容易に分離することもできる。また、別の方式として、紫外線硬化型テープ等により接着層等を設けると、加工基板とガラス基板を容易に固定、分離することができる。 The glass substrate is easy to smooth the surface and has rigidity. Therefore, when a glass substrate is used as the support substrate, the processed substrate can be supported firmly and accurately. In addition, the glass substrate easily transmits light such as ultraviolet light and infrared light. Therefore, when a glass substrate is used as the support substrate and an adhesive layer or the like is provided by an ultraviolet curable adhesive or the like, the processed substrate and the glass substrate can be easily fixed. Furthermore, if a release layer or the like that absorbs infrared rays is provided, the processed substrate and the glass substrate can be easily separated. As another method, when an adhesive layer or the like is provided with an ultraviolet curable tape or the like, the processed substrate and the glass substrate can be easily fixed and separated.
ところで、加工基板とガラス基板の熱膨張係数が不整合であると、加工処理時に加工基板の寸法変化（特に、反り変形）が生じ易くなる。結果として、加工基板の一方の表面に対して、高密度に配線することが困難になり、また半田バンプを正確に形成することも困難になる。よって、加工基板とガラス基板の熱膨張係数を厳密に整合させることが重要になる。 By the way, if the thermal expansion coefficients of the processed substrate and the glass substrate are mismatched, a dimensional change (particularly warp deformation) of the processed substrate is likely to occur during processing. As a result, it is difficult to perform wiring with high density on one surface of the processed substrate, and it is also difficult to accurately form solder bumps. Therefore, it is important to strictly match the thermal expansion coefficients of the processed substrate and the glass substrate.
従来、ガラス基板のガラス組成を調整することにより、ガラス基板の熱膨張係数を加工基板の熱膨張係数に整合させていた。 Conventionally, by adjusting the glass composition of the glass substrate, the thermal expansion coefficient of the glass substrate is matched with the thermal expansion coefficient of the processed substrate.
しかし、熱膨張係数が異なる加工基板が多数ある場合には、その数に応じて、ガラス基板のガラス組成を設計して、熱膨張係数を整合させる必要があり、結果としてガラス基板の製造コストが高騰してしまう。 However, when there are a large number of processed substrates having different thermal expansion coefficients, it is necessary to design the glass composition of the glass substrate according to the number and match the thermal expansion coefficient. As a result, the manufacturing cost of the glass substrate is reduced. Soaring.
また、加工基板内で半導体チップの割合が少なく、封止材の割合が多い場合、加工基板の熱膨張係数が高くなるが、この場合、ガラス基板のガラス組成中にアルカリ金属酸化物を２５質量％程度導入して、ガラス基板の熱膨張係数を上昇させる必要がある。 Moreover, when the ratio of the semiconductor chip is small in the processed substrate and the ratio of the sealing material is large, the thermal expansion coefficient of the processed substrate is increased. In this case, 25 mass of alkali metal oxide is contained in the glass composition of the glass substrate. It is necessary to increase the thermal expansion coefficient of the glass substrate by introducing about%.
しかし、ガラス基板のガラス組成中にアルカリ金属酸化物を過剰に導入すると、ガラス基板からアルカリ溶出量が多くなる。結果として、半導体パッケージの製造工程において、薬液を使用する工程（例えば、支持ガラス基板をリサイクルする際に、支持ガラス基板の表面に付着した樹脂等を薬液除去する工程）を通過させ難くなる。 However, if an excessive amount of alkali metal oxide is introduced into the glass composition of the glass substrate, the amount of alkali elution from the glass substrate increases. As a result, in the manufacturing process of the semiconductor package, it becomes difficult to pass a step of using a chemical solution (for example, a step of removing a chemical solution attached to the surface of the support glass substrate when recycling the support glass substrate).
本発明は、上記事情に鑑みなされたものであり、その技術的課題は、簡便な手法により、成形後の支持基板の熱膨張係数を調整し得ると共に、支持基板のアルカリ溶出量を低減し得る方法を創案することである。 The present invention has been made in view of the above circumstances, and its technical problem is that the thermal expansion coefficient of the support substrate after molding can be adjusted by a simple method and the amount of alkali elution from the support substrate can be reduced. It is to create a method.
本発明者は、種々の実験を繰り返した結果、ガラス基板を熱処理して、ガラスマトリクス中に特定の高膨張結晶を析出させた結晶化ガラス基板を得ることにより、上記技術的課題を解決し得ることを見出し、本発明として、提案するものである。すなわち、本発明の支持結晶化ガラス基板の製造方法は、加工基板を支持するための支持結晶化ガラス基板の製造方法において、溶融ガラスを成形してガラス基板を得る成形工程と、該ガラス基板を熱処理して、二珪酸リチウム、α−クリストバライト、α−クォーツの内、一種又は二種以上が析出した支持結晶化ガラス基板を得る熱処理工程と、を備えることを特徴とする。 As a result of repeating various experiments, the inventor can solve the above technical problem by heat-treating a glass substrate to obtain a crystallized glass substrate in which specific high-expansion crystals are precipitated in a glass matrix. The present invention is discovered and proposed as the present invention. That is, the method for producing a supported crystallized glass substrate according to the present invention is a method for producing a support crystallized glass substrate for supporting a processed substrate. And a heat treatment step of obtaining a supported crystallized glass substrate on which one or more of lithium disilicate, α-cristobalite, and α-quartz are deposited.
本発明の支持結晶化ガラス基板の製造方法は、ガラス基板を熱処理して、支持結晶化ガラス基板を得ることを特徴とする。このようにすれば、熱処理条件の変更により、支持結晶化ガラス基板の析出結晶の種類、量を調整することができる。結果として、支持結晶化ガラス基板の熱膨張係数の調整が容易になるため、加工基板の多品種化に適正に対応することができる。 The method for producing a supported crystallized glass substrate of the present invention is characterized in that a glass substrate is heat-treated to obtain a support crystallized glass substrate. If it does in this way, the kind and quantity of the precipitation crystal | crystallization of a support crystallized glass substrate can be adjusted with the change of heat processing conditions. As a result, the adjustment of the thermal expansion coefficient of the support crystallized glass substrate is facilitated, so that it is possible to appropriately cope with a variety of processed substrates.
本発明の支持結晶化ガラス基板の製造方法は、熱処理工程により、高膨張結晶、つまり二珪酸リチウム、α−クリストバライト、α−クォーツの内、一種又は二種以上を析出させた支持結晶化ガラス基板を得ることを特徴とする。ガラスマトリクス中にこれらの結晶を析出させると、熱膨張係数を高めるために、組成中にアルカリ金属酸化物を過剰に導入する必要がなくなる。その結果、支持結晶化ガラス基板のアルカリ溶出量を低減することが可能になる。更に、これらの結晶を析出させると、結晶化前の結晶性ガラスの時に比べて、ヤング率が向上する。なお、結晶化ガラス基板は、ガラス基板と同様にして、表面を平滑化し易く、光透過性を付与することが可能である。 The method for producing a supported crystallized glass substrate according to the present invention comprises a support crystallized glass substrate in which one or more of high expansion crystals, that is, lithium disilicate, α-cristobalite, α-quartz are precipitated by a heat treatment step. It is characterized by obtaining. When these crystals are deposited in the glass matrix, it is not necessary to introduce an excessive amount of alkali metal oxide into the composition in order to increase the thermal expansion coefficient. As a result, it becomes possible to reduce the alkali elution amount of the support crystallized glass substrate. Further, when these crystals are precipitated, the Young's modulus is improved as compared with the case of crystalline glass before crystallization. Note that the crystallized glass substrate can be easily smoothed in the same manner as the glass substrate, and can impart light permeability.
また、本発明の支持結晶化ガラス基板の製造方法は、結晶化ガラス基板の主結晶（析出量が最も多い結晶）が二珪酸リチウムであることが好ましい。 In the method for producing a supported crystallized glass substrate of the present invention, it is preferable that the main crystal of the crystallized glass substrate (a crystal having the largest amount of precipitation) is lithium disilicate.
また、本発明の支持結晶化ガラス基板の製造方法は、加工基板の熱膨張係数に整合するように、ガラス基板を熱処理して、支持結晶化ガラス基板の結晶化度を変化させることが好ましい。ここで、「結晶化度」は、粉末法によりＸ線回折装置（リガク製ＲＩＮＴ−２１００）で評価することができる。具体的には、非晶質の質量に相当するハローの面積と、結晶の質量に相当するピークの面積とをそれぞれ算出した後、［ピークの面積］×１００／［ピークの面積＋ハローの面積］（％）の式により求めることができる。 Moreover, it is preferable that the manufacturing method of the support crystallized glass substrate of this invention changes the crystallinity degree of a support crystallized glass substrate by heat-processing a glass substrate so that the thermal expansion coefficient of a process substrate may be matched. Here, the “crystallinity” can be evaluated by an X-ray diffractometer (RINT-2100 manufactured by Rigaku) by a powder method. Specifically, after calculating the area of the halo corresponding to the amorphous mass and the area of the peak corresponding to the mass of the crystal, [peak area] × 100 / [peak area + halo area] ] (%).
また、本発明の支持結晶化ガラス基板の製造方法は、加工基板の熱膨張係数に整合するように、ガラス基板を熱処理して、支持結晶化ガラス基板中のα−クリストバライト及び／又はα−クォーツの析出割合を変化させることが好ましい。 In addition, the method for producing a supported crystallized glass substrate according to the present invention includes heat-treating the glass substrate so as to match the thermal expansion coefficient of the processed substrate, so that α-cristobalite and / or α-quartz in the support crystallized glass substrate is obtained. It is preferable to change the precipitation ratio of.
また、本発明の支持結晶化ガラス基板の製造方法は、支持結晶化ガラス基板の３０〜３８０℃の温度範囲における平均線熱膨張係数が６ｐｐｍ／℃超であり、且つ１９．５ｐｐｍ／℃以下であることが好ましい。このようにすれば、加工基板内で半導体チップの割合が少なく、封止材の割合が多い場合に、加工基板と支持結晶化ガラス基板の熱膨張係数が整合し易くなる。そして、両者の熱膨張係数が整合すると、加工処理時に加工基板の寸法変化（特に、反り）を抑制し易くなる。結果として、加工基板の一方の表面に対して、高密度に配線することが可能になり、また半田バンプを正確に形成することも可能になる。ここで、「３０〜３８０℃の温度範囲における平均線熱膨張係数」は、ディラトメーターで測定可能である。 Moreover, the manufacturing method of the support crystallized glass substrate of the present invention has an average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. of the support crystallized glass substrate of more than 6 ppm / ° C. and 19.5 ppm / ° C. or less. Preferably there is. In this way, when the ratio of the semiconductor chip is small and the ratio of the sealing material is large in the processed substrate, the thermal expansion coefficients of the processed substrate and the supporting crystallized glass substrate are easily matched. When the thermal expansion coefficients of the two match, it becomes easy to suppress dimensional changes (particularly warpage) of the processed substrate during processing. As a result, wiring on one surface of the processed substrate can be performed with high density, and solder bumps can be accurately formed. Here, the “average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C.” can be measured with a dilatometer.
また、本発明の支持結晶化ガラス基板の製造方法は、支持結晶化ガラス基板が、組成として、質量％で、ＳｉＯ２ ５０〜８５％、Ａｌ２Ｏ３ ０．１〜１５％、Ｂ２Ｏ３ ０〜１０％、Ｐ２Ｏ５ ０〜１５％、Ｌｉ２Ｏ ２〜２０％、Ｎａ２Ｏ ０〜１０％、Ｋ２Ｏ ０〜７％、ＭｇＯ ０〜１０％、ＣａＯ ０〜５％、ＳｒＯ ０〜５％、ＢａＯ ０〜５％、ＺｎＯ ０〜５％、ＺｒＯ２ ０〜１０％を含有することが好ましい。 A method of manufacturing a supporting crystallized glass substrate of the present invention, the supporting crystallized glass substrate, a composition, in mass%, SiO 2 50~85%, Al 2 O 3 0.1~15%, B 2 O 3 0~10%, P 2 O 5 0~15%, Li 2 O 2~20%, Na 2 O 0~10%, K 2 O 0~7%, 0~10% MgO, CaO 0~5% SrO 0 to 5%, BaO 0 to 5%, ZnO 0 to 5%, ZrO 2 0 to 10% are preferably contained.
また、本発明の支持結晶化ガラス基板の製造方法は、ガラス基板の板厚が０．４ｍ以上、且つ２ｍｍ未満になるように、溶融ガラスを成形することが好ましい。 Moreover, it is preferable that the manufacturing method of the support crystallized glass substrate of this invention shape | molds molten glass so that the plate | board thickness of a glass substrate may be 0.4 m or more and less than 2 mm.
また、本発明の支持結晶化ガラス基板の製造方法は、熱処理工程後に、支持結晶化ガラス基板の表面を研磨して、全体板厚偏差を５μｍ以下に低減する研磨工程を備えることが好ましい。ここで、「全体板厚偏差」は、支持結晶化ガラス基板全体の最大板厚と最小板厚の差であり、例えばコベルコ科研社製のＳＢＷ−３３１ＭＬ／ｄにより測定可能である。 Moreover, it is preferable that the manufacturing method of the support crystallized glass substrate of this invention is equipped with the grinding | polishing process of grind | polishing the surface of a support crystallized glass substrate after a heat treatment process, and reducing a total board thickness deviation to 5 micrometers or less. Here, the “overall plate thickness deviation” is a difference between the maximum plate thickness and the minimum plate thickness of the entire support crystallized glass substrate, and can be measured by, for example, SBW-331ML / d manufactured by Kobelco Research Institute.
また、本発明の支持結晶化ガラス基板の製造方法は、加工基板が、少なくとも封止材でモールドされた半導体チップを備えることが好ましい。 Moreover, it is preferable that the manufacturing method of the support crystallized glass substrate of this invention is provided with the semiconductor chip by which the process board | substrate was molded with the sealing material at least.
また、本発明の半導体パッケージの製造方法は、少なくとも加工基板と加工基板を支持するための支持結晶化ガラス基板とを備える積層体を作製する積層工程と、積層体中の加工基板に対して、加工処理を行う加工処理工程と、を備えると共に、支持結晶化ガラス基板が、上記の支持結晶化ガラス基板の製造方法により作製されていることが好ましい。 Moreover, the manufacturing method of the semiconductor package of the present invention includes a laminating process for producing a laminate including at least a processed substrate and a support crystallized glass substrate for supporting the processed substrate, and a processed substrate in the laminate, It is preferable that the supporting crystallized glass substrate is produced by the manufacturing method of the above-mentioned supporting crystallized glass substrate.
また、本発明の半導体パッケージの製造方法は、加工処理が、加工基板の一方の表面に配線する処理を含むことが好ましい。 In the method for manufacturing a semiconductor package of the present invention, it is preferable that the processing includes a process of wiring on one surface of the processed substrate.
また、本発明の半導体パッケージの製造方法は、加工処理が、加工基板の一方の表面に半田バンプを形成する処理を含むことが好ましい。 In the semiconductor package manufacturing method of the present invention, it is preferable that the processing process includes a process of forming a solder bump on one surface of the processed substrate.
本発明の支持結晶化ガラス基板の製造方法は、加工基板を支持するための支持結晶化ガラス基板の製造方法において、溶融ガラスを成形してガラス基板を得る成形工程と、加工基板の熱膨張係数に整合するように、該ガラス基板を熱処理して、支持結晶化ガラス基板の結晶化度を変化させる熱処理工程と、を備えることを特徴とする。 The method for producing a supported crystallized glass substrate according to the present invention is a method for producing a supported crystallized glass substrate for supporting a processed substrate. In the method for producing a supported crystallized glass substrate, a forming step of forming a glass substrate by forming molten glass, and a thermal expansion coefficient of the processed substrate And a heat treatment step of changing the crystallinity of the supporting crystallized glass substrate by heat-treating the glass substrate so as to match the above.
本発明の支持結晶化ガラス基板の製造方法は、加工基板を支持するための支持結晶化ガラス基板の製造方法において、溶融ガラスを成形してガラス基板を得る成形工程と、加工基板の熱膨張係数に整合するように、該ガラス基板を熱処理して、支持結晶化ガラス基板の析出結晶の割合を変化させる熱処理工程と、を備えることを特徴とする。 The method for producing a supported crystallized glass substrate according to the present invention is a method for producing a supported crystallized glass substrate for supporting a processed substrate. In the method for producing a supported crystallized glass substrate, a forming step of forming a glass substrate by forming molten glass, and a thermal expansion coefficient of the processed substrate And a heat treatment step of changing the ratio of the precipitated crystals of the supporting crystallized glass substrate by heat-treating the glass substrate so as to match the above.
本発明の支持結晶化ガラス基板の製造方法は、溶融ガラスを成形してガラス基板を得る成形工程を有する。成形方法として、種々の方法を採択することができる。例えば、スロットダウン法、ロールアウト法、リドロー法、フロート法、インゴット成型法等を採択することができる。 The manufacturing method of the support crystallized glass substrate of this invention has a shaping | molding process which shape | molds molten glass and obtains a glass substrate. Various methods can be adopted as the forming method. For example, a slot down method, a rollout method, a redraw method, a float method, an ingot molding method, etc. can be adopted.
本発明の支持結晶化ガラス基板の製造方法は、ガラス基板を熱処理して、二珪酸リチウム、α−クリストバライト、α−クォーツの内、一種又は二種以上が析出した支持結晶化ガラス基板を得る熱処理工程を有しており、ガラス基板を熱処理して、主結晶として二珪酸リチウムが析出した支持結晶化ガラス基板を得ることが好ましい。これらの結晶、特に二珪酸リチウムが析出すると、アルカリ溶出量を低減しつつ、支持結晶化ガラス基板のヤング率と熱膨張係数を高めることができる。特に、二珪酸リチウムは、結晶粒子のサイズが微細化し易いため、研磨処理により全体板厚偏差を低減する上で有利であり、また透明性を確保する上でも有利である。一方、本発明の支持結晶化ガラス基板は、β−ユークリプタイト、β−スポジュメン、β−クリストバライト、β−クォーツ及びこれらの固溶体が析出していないことが好ましい。このようにすれば、支持結晶化ガラス基板の熱膨張係数が不当に低下する事態を回避することができる。 The method for producing a supported crystallized glass substrate of the present invention is a heat treatment for heat-treating a glass substrate to obtain a supported crystallized glass substrate in which one or more of lithium disilicate, α-cristobalite and α-quartz are deposited. It is preferable to obtain a support crystallized glass substrate in which lithium disilicate is deposited as a main crystal by heat-treating the glass substrate. When these crystals, particularly lithium disilicate, precipitate, it is possible to increase the Young's modulus and thermal expansion coefficient of the support crystallized glass substrate while reducing the alkali elution amount. In particular, lithium disilicate is advantageous in reducing the overall thickness deviation by the polishing process because the size of the crystal particles is easily miniaturized, and is also advantageous in ensuring transparency. On the other hand, it is preferable that β-eucryptite, β-spodumene, β-cristobalite, β-quartz and solid solutions thereof are not deposited on the support crystallized glass substrate of the present invention. If it does in this way, the situation where the thermal expansion coefficient of a support crystallized glass substrate falls unjustly can be avoided.
本発明の支持結晶化ガラス基板の製造方法は、加工基板の熱膨張係数に整合するように、ガラス基板を熱処理して、支持結晶化ガラス基板の結晶化度を変化させることが好ましい。このようにすれば、結晶化度の制御により、同一ロットのガラス基板から熱膨張係数が異なる支持結晶化ガラス基板を作製し得る、つまり加工基板の熱膨張係数に応じて、支持結晶化ガラス基板の熱膨張係数を調整することができる。結果として、ガラス基板の品種を増加させることなく、支持結晶化ガラス基板の熱膨張係数を種々の加工基板の熱膨張係数に厳密に整合させることができる。 In the method for producing a support crystallized glass substrate according to the present invention, it is preferable to change the crystallinity of the support crystallized glass substrate by heat-treating the glass substrate so as to match the thermal expansion coefficient of the processed substrate. In this way, it is possible to produce a support crystallized glass substrate having a different thermal expansion coefficient from a glass substrate of the same lot by controlling the degree of crystallinity, that is, according to the thermal expansion coefficient of the processed substrate, the support crystallized glass substrate The thermal expansion coefficient of can be adjusted. As a result, the thermal expansion coefficient of the supporting crystallized glass substrate can be strictly matched with the thermal expansion coefficient of various processed substrates without increasing the number of glass substrate types.
本発明の支持結晶化ガラス基板の製造方法は、加工基板の熱膨張係数に整合するように、ガラス基板を熱処理して、支持結晶化ガラス基板中のα−クリストバライト及び／又はα−クォーツの析出割合を変化させることが好ましい。このようにすれば、α−クリストバライト及び／又はα−クォーツの析出割合の制御により、同一ロットのガラス基板から熱膨張係数が異なる支持結晶化ガラス基板を作製し得る、つまり加工基板の熱膨張係数に応じて、支持結晶化ガラス基板の熱膨張係数を調整することができる。結果として、ガラス基板の品種を増加させることなく、支持結晶化ガラス基板の熱膨張係数を種々の加工基板の熱膨張係数に厳密に整合させることができる。 In the method for producing a supported crystallized glass substrate of the present invention, the glass substrate is heat-treated so as to match the thermal expansion coefficient of the processed substrate, and α-cristobalite and / or α-quartz is precipitated in the support crystallized glass substrate. It is preferable to change the ratio. In this way, by controlling the precipitation ratio of α-cristobalite and / or α-quartz, it is possible to produce a support crystallized glass substrate having a different thermal expansion coefficient from a glass substrate of the same lot, that is, the thermal expansion coefficient of the processed substrate. Accordingly, the thermal expansion coefficient of the support crystallized glass substrate can be adjusted. As a result, the thermal expansion coefficient of the supporting crystallized glass substrate can be strictly matched with the thermal expansion coefficient of various processed substrates without increasing the number of glass substrate types.
本発明の支持結晶化ガラス基板の製造方法において、熱処理工程は、ガラスマトリクス中に結晶核を生成し、更に生成した結晶を成長させる工程である。結晶核を形成させるための熱処理温度は５３０〜６２０℃、特に５５０〜６００℃が好ましく、熱処理時間は１０〜１５０分間、特に３０〜９０分間が好ましい。また結晶を成長させるための熱処理温度は７３０〜８２０℃、特に７５０〜８００℃が好ましく、熱処理時間は１０〜１２０分間、特に３０〜９０分間が好ましい。熱処理温度と熱処理時間が上記範囲外になると、支持結晶化ガラス基板の熱膨張係数を制御し難くなる。 In the method for producing a supported crystallized glass substrate of the present invention, the heat treatment step is a step of generating crystal nuclei in the glass matrix and further growing the generated crystal. The heat treatment temperature for forming crystal nuclei is preferably 530 to 620 ° C., particularly 550 to 600 ° C., and the heat treatment time is preferably 10 to 150 minutes, particularly preferably 30 to 90 minutes. The heat treatment temperature for growing the crystal is preferably 730 to 820 ° C., particularly preferably 750 to 800 ° C., and the heat treatment time is preferably 10 to 120 minutes, particularly preferably 30 to 90 minutes. When the heat treatment temperature and the heat treatment time are out of the above ranges, it becomes difficult to control the thermal expansion coefficient of the support crystallized glass substrate.
本発明に係る支持結晶化ガラス基板の３０〜３８０℃の温度範囲における平均線熱膨張係数は、好ましくは６ｐｐｍ／℃超、且つ１９．５ｐｐｍ／℃以下、より好ましくは８ｐｐｍ／℃超、且つ１８ｐｐｍ／℃以下、更に好ましくは１０ｐｐｍ／℃以上、且つ１６ｐｐｍ／℃以下、特に好ましくは１１ｐｐｍ／℃以上、且つ１５ｐｐｍ／℃以下である。３０〜３８０℃の温度範囲における平均線熱膨張係数が上記範囲外になると、加工基板内で半導体チップの割合が少なく、封止材の割合が多い場合に、加工基板と支持結晶化ガラス基板の熱膨張係数が整合し難くなる。そして、両者の熱膨張係数が不整合になると、加工処理時に加工基板の寸法変化（特に、反り）が生じ易くなる。 The average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. of the support crystallized glass substrate according to the present invention is preferably more than 6 ppm / ° C. and not more than 19.5 ppm / ° C., more preferably more than 8 ppm / ° C. and 18 ppm. / ° C. or less, more preferably 10 ppm / ° C. or more and 16 ppm / ° C. or less, and particularly preferably 11 ppm / ° C. or more and 15 ppm / ° C. or less. When the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is out of the above range, when the ratio of the semiconductor chip is small in the processed substrate and the ratio of the sealing material is large, the processed substrate and the supporting crystallized glass substrate It becomes difficult to match the thermal expansion coefficients. If the thermal expansion coefficients of the two are mismatched, a dimensional change (particularly warpage) of the processed substrate is likely to occur during processing.
本発明に係る支持結晶化ガラス基板のヤング率は、好ましくは８０ＧＰａ以上、８５ＧＰａ以上、９０ＧＰａ以上、９５ＧＰａ以上、９８ＧＰａ以上、特に１００〜１５０ＧＰａである。ヤング率が低過ぎると、積層体全体の剛性が低下して、加工基板の変形、反り、破損が発生し易くなる。 The Young's modulus of the support crystallized glass substrate according to the present invention is preferably 80 GPa or more, 85 GPa or more, 90 GPa or more, 95 GPa or more, 98 GPa or more, particularly 100 to 150 GPa. If the Young's modulus is too low, the rigidity of the entire laminate is lowered, and the processed substrate is likely to be deformed, warped, or damaged.
本発明に係る支持結晶化ガラス基板は、組成として、質量％で、ＳｉＯ２ ５０〜８５％、Ａｌ２Ｏ３ ０．１〜１５％、Ｂ２Ｏ３ ０〜１０％、Ｐ２Ｏ５ ０〜１５％、Ｌｉ２Ｏ ２〜２０％、Ｎａ２Ｏ ０〜１０％、Ｋ２Ｏ ０〜７％、ＭｇＯ ０〜１０％、ＣａＯ ０〜５％、ＳｒＯ ０〜５％、ＢａＯ ０〜５％、ＺｎＯ ０〜５％、ＺｒＯ２ ０〜１０％を含有することが好ましい。上記のように各成分の含有量を限定した理由を以下に示す。なお、各成分の含有量の説明において、％表示は、特に断りがある場合を除き、質量％を表す。 Supporting crystallized glass substrate according to the present invention, a composition, in mass%, SiO 2 50~85%, Al 2 O 3 0.1~15%, B 2 O 3 0~10%, P 2 O 5 0 ~15%, Li 2 O 2~20% , Na 2 O 0~10%, K 2 O 0~7%, 0~10% MgO, CaO 0~5%, SrO 0~5%, BaO 0~5 %, ZnO 0 to 5%, ZrO 2 0 to 10% are preferable. The reason for limiting the content of each component as described above will be described below. In addition, in description of content of each component,% display represents the mass% unless there is particular notice.
ＳｉＯ２は、ヤング率と耐候性を高める成分であり、また二珪酸リチウム、α−クリストバライト、α−クォーツ等を析出させるための成分である。しかし、ＳｉＯ２の含有量が多過ぎると、高温粘度が高くなり、溶融性、成形性が低下し易くなる。よって、ＳｉＯ２の含有量は、好ましくは５０〜８５％、６０〜８２％、６５〜８０％、６８〜７９％、特に７０〜７８％である。 SiO 2 is a component that improves Young's modulus and weather resistance, and is a component for precipitating lithium disilicate, α-cristobalite, α-quartz, and the like. However, when the content of SiO 2 is too large, the higher the viscosity at high temperature meltability, moldability tends to decrease. Therefore, the content of SiO 2 is preferably 50 to 85%, 60 to 82%, 65 to 80%, 68 to 79%, particularly 70 to 78%.
Ａｌ２Ｏ３は、ヤング率を高める成分であると共に、分相、失透を抑制する成分である。しかし、Ａｌ２Ｏ３の含有量が多過ぎると、相転移によりβ−スポジュメン等の低膨張結晶が析出し易くなり、また高温粘度が高くなり、溶融性、成形性が低下し易くなる。よって、Ａｌ２Ｏ３の含有量は、好ましくは０．１〜１５％、０．５〜１０％、１〜９％、２〜８％、特に４〜７％である。 Al 2 O 3 is a component that enhances the Young's modulus and a component that suppresses phase separation and devitrification. However, when the content of Al 2 O 3 is too large, low-expansion crystals such as β-spodumene are likely to precipitate due to phase transition, and the high-temperature viscosity is increased, so that the meltability and moldability are liable to be lowered. Therefore, the content of Al 2 O 3 is preferably 0.1 to 15%, 0.5 to 10%, 1 to 9%, 2 to 8%, particularly 4 to 7%.
Ｂ２Ｏ３は、溶融性、耐失透性を高める成分である。しかし、Ｂ２Ｏ３の含有量が多過ぎると、ヤング率、耐候性が低下し易くなる。よって、Ｂ２Ｏ３の含有量は、好ましくは０〜１０％、０〜７％、０〜５％、０〜３％、特に０〜１％未満である。 B 2 O 3 is a component that enhances meltability and devitrification resistance. However, when the content of B 2 O 3 is too large, the Young's modulus, weather resistance tends to decrease. Therefore, the content of B 2 O 3 is preferably 0 to 10%, 0 to 7%, 0 to 5%, 0 to 3%, particularly less than 0 to 1%.
Ｐ２Ｏ５は、結晶核を生成させるための成分である。しかし、Ｐ２Ｏ５を多量に導入すると、ガラスが分相し易くなる。よって、Ｐ２Ｏ５の含有量は、好ましくは０〜１５％、０．１〜１２％、１〜８％、特に１．５〜４％である。 P 2 O 5 is a component for generating crystal nuclei. However, when a large amount of P 2 O 5 is introduced, the glass is likely to undergo phase separation. Therefore, the content of P 2 O 5 is preferably 0 to 15%, 0.1 to 12%, 1 to 8%, particularly 1.5 to 4%.
Ｌｉ２Ｏは、ヤング率や熱膨張係数を高める成分であり、また高温粘性を下げて、溶融性を顕著に高める成分であり、更に二珪酸リチウム等を析出させるための成分である。しかし、Ｌｉ２Ｏの含有量が多過ぎると、アルカリ溶出量が多くなり易い。よって、Ｌｉ２Ｏの含有量は、好ましくは２〜２０％、４〜１７％、５〜１５％、特に６〜１２％である。 Li 2 O is a component that increases the Young's modulus and the coefficient of thermal expansion, is a component that lowers the high-temperature viscosity and remarkably increases the meltability, and is a component for further precipitating lithium disilicate and the like. However, when the content of Li 2 O is too large, it tends to be much amount of alkali elution. Therefore, the content of Li 2 O is preferably 2 to 20%, 4 to 17%, 5 to 15%, particularly 6 to 12%.
Ｎａ２Ｏは、熱膨張係数を高める成分であり、また高温粘性を下げて、溶融性を顕著に高める成分である。また、ガラス原料の初期の溶融に寄与する成分である。しかし、Ｎａ２Ｏの含有量が多過ぎると、アルカリ溶出量が多くなり易い。よって、Ｎａ２Ｏの含有量は、好ましくは０〜１０％、０〜５％、０〜３％、特に０〜１％未満である。 Na 2 O is a component that increases the thermal expansion coefficient, and is a component that significantly increases the meltability by lowering the high-temperature viscosity. Further, it is a component that contributes to the initial melting of the glass raw material. However, when the content of Na 2 O is too large, it tends to be much amount of alkali elution. Therefore, the content of Na 2 O is preferably 0 to 10%, 0 to 5%, 0 to 3%, particularly 0 to less than 1%.
Ｋ２Ｏは、熱膨張係数を高める成分であり、また高温粘性を下げて、溶融性を顕著に高める共に、析出結晶の粗大化を抑制する成分である。しかし、Ｋ２Ｏの含有量が多過ぎると、アルカリ溶出量が多くなり易い。よって、Ｋ２Ｏの含有量は、好ましくは０〜７％、０〜６％、０．１〜５％、０．５〜３％、特に１〜２％である。なお、析出結晶が粗大化すると、研磨処理により全体板厚偏差を低減し難くなる。 K 2 O is a component that increases the coefficient of thermal expansion, and is a component that lowers the viscosity at high temperature to remarkably increase the meltability and suppress the coarsening of the precipitated crystals. However, when the content of K 2 O is too large, it tends to be much amount of alkali elution. Therefore, the content of K 2 O is preferably 0 to 7%, 0 to 6%, 0.1 to 5%, 0.5 to 3%, particularly 1 to 2%. In addition, when a precipitation crystal becomes coarse, it will become difficult to reduce the whole plate | board thickness deviation by grinding | polishing process.
ＭｇＯは、ヤング率を高めると共に、高温粘性を下げて、溶融性を高める成分である。しかし、ＭｇＯの含有量が多過ぎると、成形時にガラスが失透し易くなる。よって、ＭｇＯの含有量は、好ましくは０〜１０％、０〜７％、０．１〜４％、特に０．３〜２％である。 MgO is a component that increases the Young's modulus and lowers the high-temperature viscosity to increase the meltability. However, when there is too much content of MgO, it will become easy to devitrify glass at the time of shaping | molding. Therefore, the content of MgO is preferably 0 to 10%, 0 to 7%, 0.1 to 4%, particularly 0.3 to 2%.
ＣａＯは、高温粘性を下げて、溶融性を顕著に高める成分である。またアルカリ土類金属酸化物の中では、導入原料が比較的安価であるため、バッチコストを低廉化する成分であるが、その含有量が多過ぎると、成形時にガラスが失透し易くなる。よって、ＣａＯの含有量は、好ましくは０〜５％、０〜３％、０〜１％、特に０〜０．５％である。 CaO is a component that lowers the high-temperature viscosity and significantly increases the meltability. Moreover, among the alkaline earth metal oxides, since the introduced raw material is relatively inexpensive, it is a component that lowers the batch cost. However, if the content is too large, the glass tends to devitrify during molding. Therefore, the content of CaO is preferably 0 to 5%, 0 to 3%, 0 to 1%, particularly 0 to 0.5%.
ＳｒＯは、分相を抑制する成分であり、また析出結晶の粗大化を抑制する成分であるが、その含有量が多過ぎると、熱処理により結晶を析出させることが困難になる。よって、ＳｒＯの含有量は、好ましくは０〜５％、０．１〜４％、０．５〜３％、特に１〜２％である。 SrO is a component that suppresses phase separation and is a component that suppresses the coarsening of precipitated crystals. However, if the content is too large, it becomes difficult to precipitate crystals by heat treatment. Therefore, the content of SrO is preferably 0 to 5%, 0.1 to 4%, 0.5 to 3%, particularly 1 to 2%.
ＢａＯは、析出結晶の粗大化を抑制する成分であるが、その含有量が多過ぎると、熱処理により結晶を析出させることが困難になる。よって、ＢａＯの含有量は、好ましくは０〜５％、０〜４％、０．１〜３％、特に０．５〜２％である。 BaO is a component that suppresses the coarsening of the precipitated crystal, but if its content is too large, it becomes difficult to precipitate the crystal by heat treatment. Therefore, the content of BaO is preferably 0 to 5%, 0 to 4%, 0.1 to 3%, particularly 0.5 to 2%.
ＺｎＯは、高温粘性を下げて、溶融性を顕著に高める成分であると共に、析出結晶の粗大化を抑制する成分である。しかし、ＺｎＯの含有量が多過ぎると、成形時にガラスが失透し易くなる。よって、ＺｎＯの含有量は、好ましくは０〜５％、０〜３％、０．１〜２％、特に０．２〜１％である。 ZnO is a component that lowers the viscosity at high temperature and remarkably increases the meltability, and also suppresses the coarsening of the precipitated crystals. However, if the ZnO content is too large, the glass tends to devitrify during molding. Therefore, the content of ZnO is preferably 0 to 5%, 0 to 3%, 0.1 to 2%, particularly 0.2 to 1%.
ＺｒＯ２は、ヤング率と耐候性を高める成分であり、また結晶核を生成させるための成分である。しかし、ＺｒＯ２を多量に導入すると、ガラスが失透し易くなり、また導入原料が難溶解性であるため、未熔解の異物が結晶化ガラス基板内に混入する虞がある。よって、ＺｒＯ２の含有量は、好ましくは０〜１０％、０．１〜９％、１〜８％、２〜７％、特に３〜６％である。 ZrO 2 is a component that enhances Young's modulus and weather resistance, and is a component for generating crystal nuclei. However, when a large amount of ZrO 2 is introduced, the glass tends to be devitrified, and since the introduced raw material is hardly soluble, there is a possibility that undissolved foreign matter is mixed in the crystallized glass substrate. Therefore, the content of ZrO 2 is preferably 0 to 10%, 0.1 to 9%, 1 to 8%, 2 to 7%, particularly 3 to 6%.
上記成分以外にも、任意成分として、他の成分を導入してもよい。なお、上記成分以外の他の成分の含有量は、本発明の効果を的確に享受する観点から、合量で１０％以下、特に５％以下が好ましい。 In addition to the above components, other components may be introduced as optional components. In addition, the content of other components other than the above components is preferably 10% or less, and particularly preferably 5% or less in total, from the viewpoint of accurately enjoying the effects of the present invention.
ＴｉＯ２は、結晶核を生成させるための成分であり、また耐候性、ヤング率を改善する成分である。しかし、ＴｉＯ２を多量に導入すると、ガラスが着色し、透過率が低下し易くなる。よって、ＴｉＯ２の含有量は、好ましくは０〜５％、０〜３％、特に０〜１％未満である。 TiO 2 is a component for generating crystal nuclei, and is a component for improving weather resistance and Young's modulus. However, when a large amount of TiO 2 is introduced, the glass is colored and the transmittance tends to decrease. Therefore, the content of TiO 2 is preferably 0 to 5%, 0 to 3%, particularly 0 to less than 1%.
Ｙ２Ｏ３は、ガラスのヤング率を高める成分である。しかし、Ｙ２Ｏ３は、結晶成長を抑制する効果も有する。よって、Ｙ２Ｏ３の含有量は、好ましくは０〜５％、０〜３％、特に０〜１％未満である。 Y 2 O 3 is a component that increases the Young's modulus of glass. However, Y 2 O 3 also has an effect of suppressing crystal growth. Therefore, the content of Y 2 O 3 is preferably 0 to 5%, 0 to 3%, particularly 0 to less than 1%.
Ｆｅ２Ｏ３は、不純物として混入する成分、或いは清澄剤成分として導入し得る成分である。しかし、Ｆｅ２Ｏ３の含有量が多過ぎると、紫外線透過率が低下する虞がある。すなわち、Ｆｅ２Ｏ３の含有量が多過ぎると、接着層、剥離層を介して、加工基板と支持結晶化ガラス基板の接着と脱着を適正に行うことが困難になる。よって、Ｆｅ２Ｏ３の含有量は、好ましくは０．０５％以下、０．０３％以下、特に０．０２％以下である。なお、本発明でいう「Ｆｅ２Ｏ３」は、２価の酸化鉄と３価の酸化鉄を含み、２価の酸化鉄は、Ｆｅ２Ｏ３に換算して、取り扱うものとする。他の多価酸化物についても、同様にして、表記の酸化物を基準にして取り扱うものとする。 Fe 2 O 3 is a component mixed as an impurity or a component that can be introduced as a fining agent component. However, if the content of Fe 2 O 3 is too large, there is a possibility that the ultraviolet transmission is reduced. That is, when the content of Fe 2 O 3 is too large, the adhesive layer, through a peeling layer, it is difficult to properly perform the adhesion and detachment of the processing substrate and the supporting crystallized glass substrate. Therefore, the content of Fe 2 O 3 is preferably 0.05% or less, 0.03% or less, and particularly 0.02% or less. Note that “Fe 2 O 3 ” referred to in the present invention includes divalent iron oxide and trivalent iron oxide, and the divalent iron oxide is handled in terms of Fe 2 O 3 . Similarly, other polyvalent oxides are handled on the basis of the indicated oxide.
Ｎｂ２Ｏ５、Ｌａ２Ｏ３には、歪点、ヤング率等を高める働きがある。しかし、これらの成分の含有量が各々５％、特に１％より多いと、バッチコストが高騰する虞がある。 Nb 2 O 5 and La 2 O 3 have a function of increasing the strain point, Young's modulus, and the like. However, if the content of these components is more than 5%, particularly more than 1%, the batch cost may increase.
清澄剤として、Ａｓ２Ｏ３、Ｓｂ２Ｏ３が有効に作用するが、環境的観点で言えば、この成分を極力低減することが好ましい。Ａｓ２Ｏ３、Ｓｂ２Ｏ３の含有量は、それぞれ１％以下、０．５％以下、特に０．１％以下が好ましく、実質的に含有させないことが望ましい。ここで、「実質的に〜を含有しない」とは、組成中の明示の成分の含有量が０．０５％未満の場合を指す。 As 2 O 3 and Sb 2 O 3 act effectively as fining agents, but it is preferable to reduce this component as much as possible from an environmental point of view. The contents of As 2 O 3 and Sb 2 O 3 are preferably 1% or less, 0.5% or less, particularly preferably 0.1% or less, respectively, and it is desirable not to contain them substantially. Here, “substantially does not contain” refers to the case where the content of the explicit component in the composition is less than 0.05%.
ＳｎＯ２は、高温域で良好な清澄作用を有する成分であり、また高温粘性を低下させる成分である。ＳｎＯ２の含有量は、好ましくは０〜１％、０．０１〜１％、特に０．０５〜０．５％である。ＳｎＯ２の含有量が多過ぎると、Ｓｎ系の異種結晶が析出し易くなる。なお、ＳｎＯ２の含有量が少な過ぎると、上記効果を享受し難くなる。 SnO 2 is a component having a good clarification action in a high temperature region and a component that lowers the high temperature viscosity. The content of SnO 2 is preferably 0 to 1%, 0.01 to 1%, particularly 0.05 to 0.5%. When the content of SnO 2 is too large, Sn-based heterogeneous crystals are likely to precipitate. Incidentally, when the content of SnO 2 is too small, it becomes difficult to enjoy the above-mentioned effects.
清澄剤として、ガラス特性が損なわれない限り、Ｆ、Ｃｌ、ＳＯ３、Ｃ、或いはＡｌ、Ｓｉ等の金属粉末を各々３％程度まで導入してもよい。また、ＣｅＯ２等も２％程度まで導入し得るが、紫外線透過率の低下に留意する必要がある。 As a fining agent, metal powders such as F, Cl, SO 3 , C, Al, Si or the like may be introduced up to about 3% as long as the glass properties are not impaired. Further, CeO 2 or the like can be introduced up to about 2%, but it is necessary to pay attention to a decrease in ultraviolet transmittance.
本発明の支持結晶化ガラス基板の製造方法は、ガラス基板の板厚が０．４ｍ以上、且つ２ｍｍ未満になるように、溶融ガラスを成形することが好ましい。板厚が薄くなる程、積層体の質量が軽くなるため、ハンドリング性が向上する。よって、支持結晶化ガラス基板の板厚は、好ましくは１．５ｍｍ以下、１．２ｍｍ以下、１．１ｍｍ以下、１．０ｍｍ以下、特に０．９ｍｍ以下である。一方、板厚が薄過ぎると、支持結晶化ガラス基板自体の強度が低下して、支持基板としての機能を果たし難くなる。よって、支持結晶化ガラス基板の板厚は、好ましくは０．５ｍｍ以上、０．６ｍｍ以上、特に０．７ｍｍ超である。 In the method for producing a support crystallized glass substrate of the present invention, it is preferable to mold molten glass so that the thickness of the glass substrate is 0.4 m or more and less than 2 mm. As the plate thickness decreases, the mass of the laminate becomes lighter, and thus handling properties are improved. Therefore, the thickness of the support crystallized glass substrate is preferably 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, particularly 0.9 mm or less. On the other hand, if the plate thickness is too thin, the strength of the support crystallized glass substrate itself is lowered, and it becomes difficult to perform the function as the support substrate. Therefore, the plate thickness of the supporting crystallized glass substrate is preferably 0.5 mm or more, 0.6 mm or more, and particularly more than 0.7 mm.
本発明の支持結晶化ガラス基板の製造方法は、支持結晶化ガラス基板の反り量が６０μｍ以下、５５μｍ以下、５０μｍ以下、１〜４５μｍ、特に５〜４０μｍになるように、ガラス基板を熱処理することが好ましく、また反り量を低減するために、複数のガラス基板を積層させて熱処理を行うことが好ましい。反り量が小さい程、加工処理の精度を高め易くなる。特に配線精度を高めることができるため、高密度の配線が可能になる。なお、「反り量」は、支持結晶化ガラス基板全体における最高位点と最小二乗焦点面との間の最大距離の絶対値と、最低位点と最小二乗焦点面との絶対値との合計を指し、例えばコベルコ科研社製のＳＢＷ−３３１ＭＬ／ｄにより測定可能である。 In the method for producing a supported crystallized glass substrate according to the present invention, the glass substrate is heat-treated so that the warp amount of the support crystallized glass substrate is 60 μm or less, 55 μm or less, 50 μm or less, 1 to 45 μm, particularly 5 to 40 μm. In order to reduce the amount of warpage, it is preferable to perform heat treatment by laminating a plurality of glass substrates. The smaller the warp amount, the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be increased, high-density wiring is possible. The "warp amount" is the sum of the absolute value of the maximum distance between the highest point and the least square focal plane in the entire support crystallized glass substrate and the absolute value of the lowest point and the least square focal plane. For example, it can be measured by SBW-331ML / d manufactured by Kobelco Kaken.
本発明の支持結晶化ガラス基板の製造方法は、支持結晶化ガラス基板を略円板状又はウエハ状に切り抜く工程を有するが好ましく、その直径は１００ｍｍ以上５００ｍｍ以下、特に１５０ｍｍ以上４５０ｍｍ以下が好ましく、その真円度（但し、ノッチ部を除く）は１ｍｍ以下、０．１ｍｍ以下、０．０５ｍｍ以下、特に０．０３ｍｍ以下が好ましい。このようにすれば、半導体パッケージの製造工程に適用し易くなる。なお、「真円度」は、ウエハの外形の最大値から最小値を減じた値である。 The method for producing a supported crystallized glass substrate of the present invention preferably includes a step of cutting the support crystallized glass substrate into a substantially disc shape or wafer shape, and the diameter is preferably 100 mm to 500 mm, particularly preferably 150 mm to 450 mm, The roundness (excluding the notch portion) is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, particularly 0.03 mm or less. In this way, it becomes easy to apply to the manufacturing process of a semiconductor package. The “roundness” is a value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer.
本発明の支持結晶化ガラス基板の製造方法は、熱処理工程後に、支持結晶化ガラス基板の表面を研磨して、全体板厚偏差を５μｍ以下、４μｍ以下、３μｍ以下、２μｍ以下、１μｍ以下、特に０．１〜１μｍ未満に低減する研磨工程を備えることが好ましい。全体板厚偏差が小さい程、加工処理の精度を高め易くなる。特に配線精度を高めることができるため、高密度の配線が可能になる。 The method for producing a supported crystallized glass substrate of the present invention comprises polishing the surface of the support crystallized glass substrate after the heat treatment step so that the total thickness deviation is 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, particularly It is preferable to provide a polishing step for reducing the thickness to less than 0.1 to 1 μm. The smaller the overall plate thickness deviation, the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be increased, high-density wiring is possible.
本発明の支持結晶化ガラス基板の製造方法は、熱処理後に、支持結晶化ガラス基板にノッチ部（ノッチ形状の位置合わせ部）を形成する工程を有することが好ましく、ノッチ部の深部は平面視で略円形状又は略Ｖ溝形状であることがより好ましい。これにより、支持結晶化ガラス基板のノッチ部に位置決めピン等の位置決め部材を当接させて、支持結晶化ガラス基板を位置固定し易くなる。結果として、支持結晶化ガラス基板と加工基板の位置合わせが容易になる。特に、加工基板にもノッチ部を形成して、位置決め部材を当接させると、積層体全体の位置合わせが容易になる。 The method for producing a support crystallized glass substrate according to the present invention preferably includes a step of forming a notch portion (notch-shaped alignment portion) in the support crystallized glass substrate after the heat treatment. A substantially circular shape or a substantially V-groove shape is more preferable. This makes it easier to fix the position of the support crystallized glass substrate by bringing a positioning member such as a positioning pin into contact with the notch portion of the support crystallized glass substrate. As a result, alignment of the support crystallized glass substrate and the processed substrate is facilitated. In particular, when the notch is formed on the processed substrate and the positioning member is brought into contact with the processed substrate, the alignment of the entire laminate is facilitated.
支持結晶化ガラス基板のノッチ部に位置決め部材を当接すると、ノッチ部に応力が集中し易くなり、ノッチ部を起点にして、支持結晶化ガラス基板が破損し易くなる。特に、支持結晶化ガラス基板が外力により湾曲した時に、その傾向が顕著になる。よって、本発明の支持結晶化ガラス基板の製造方法は、ノッチ部の表面と端面とが交差する端縁領域の全部又は一部が面取りする工程を有することが好ましい。これにより、ノッチ部を起点にした破損を有効に回避することができる。 When the positioning member is brought into contact with the notch portion of the support crystallized glass substrate, the stress is easily concentrated on the notch portion, and the support crystallized glass substrate is easily damaged starting from the notch portion. In particular, when the support crystallized glass substrate is bent by an external force, the tendency becomes remarkable. Therefore, it is preferable that the manufacturing method of the support crystallized glass substrate of this invention has the process of chamfering all or one part of the edge region where the surface and end surface of a notch part cross | intersect. As a result, it is possible to effectively avoid damage starting from the notch portion.
本発明の支持結晶化ガラス基板の製造方法は、ノッチ部の表面と端面とが交差する端縁領域の全部又は一部を面取りすることが好ましく、ノッチ部の表面と端面とが交差する端縁領域の５０％以上を面取りすることが更に好ましく、ノッチ部の表面と端面とが交差する端縁領域の９０％以上を面取りすることが特に好ましく、ノッチ部の表面と端面とが交差する端縁領域の全部を面取りすることが最も好ましい。ノッチ部において面取りされている領域が大きい程、ノッチ部を起点にした破損の確率を低減することができる。 In the method for producing a support crystallized glass substrate according to the present invention, it is preferable to chamfer all or part of the edge region where the surface and the end surface of the notch portion intersect, and the edge where the surface and the end surface of the notch portion intersect. More preferably, 50% or more of the area is chamfered, more preferably 90% or more of the edge area where the surface and the end face of the notch cross each other, and the edge where the surface and the end face of the notch cross each other. Most preferably, the entire area is chamfered. The larger the chamfered area at the notch, the lower the probability of breakage starting from the notch.
ノッチ部のおもて面方向の面取り幅（裏面方向の面取り幅も同様）は、好ましくは５０〜９００μｍ、２００〜８００μｍ、３００〜７００μｍ、４００〜６５０μｍ、特に５００〜６００μｍである。ノッチ部の表面方向の面取り幅が小さ過ぎると、ノッチ部を起点にして、支持結晶化ガラス基板が破損し易くなる。一方、ノッチ部のおもて面方向の面取り幅が大き過ぎると、面取り効率が低下して、支持結晶化ガラス基板の製造コストが高騰し易くなる。 The chamfering width in the front surface direction of the notch portion (same as the chamfering width in the back surface direction) is preferably 50 to 900 μm, 200 to 800 μm, 300 to 700 μm, 400 to 650 μm, and particularly 500 to 600 μm. If the chamfering width in the surface direction of the notch portion is too small, the supporting crystallized glass substrate tends to be damaged starting from the notch portion. On the other hand, if the chamfering width in the front surface direction of the notch portion is too large, the chamfering efficiency is lowered, and the manufacturing cost of the support crystallized glass substrate is likely to increase.
ノッチ部の板厚方向の面取り幅（おもて面と裏面の面取り幅の合計）は、好ましくは板厚の５〜８０％、２０〜７５％、３０〜７０％、３５〜６５％、特に４０〜６０％である。ノッチ部の板厚方向の面取り幅が小さ過ぎると、ノッチ部を起点にして、支持結晶化ガラス基板が破損し易くなる。一方、ノッチ部の板厚方向の面取り幅が大き過ぎると、外力がノッチ部の端面に集中し易くなり、ノッチ部の端面を起点にして、支持結晶化ガラス基板が破損し易くなる。 The chamfer width in the plate thickness direction of the notch portion (the total chamfer width of the front surface and the back surface) is preferably 5 to 80%, 20 to 75%, 30 to 70%, 35 to 65% of the plate thickness, in particular. 40-60%. If the chamfer width in the plate thickness direction of the notch portion is too small, the supporting crystallized glass substrate is likely to be damaged starting from the notch portion. On the other hand, if the chamfer width in the plate thickness direction of the notch portion is too large, the external force tends to concentrate on the end surface of the notch portion, and the supporting crystallized glass substrate is likely to be damaged starting from the end surface of the notch portion.
本発明の支持結晶化ガラス基板の製造方法は、イオン交換処理工程を設けないことが好ましい。イオン交換処理を行うと、支持結晶化ガラス基板の製造コストが高騰するが、イオン交換処理を行わなければ、支持結晶化ガラス基板の製造コストを低下させることが可能になる。更にイオン交換処理を行うと、支持結晶化ガラス基板の全体板厚偏差を低減し難くなるが、イオン交換処理を行わなければ、そのような不具合を解消することができる。 It is preferable that the manufacturing method of the support crystallized glass substrate of this invention does not provide an ion exchange treatment process. When the ion exchange treatment is performed, the manufacturing cost of the support crystallized glass substrate increases. However, if the ion exchange processing is not performed, the manufacturing cost of the support crystallized glass substrate can be reduced. Further, if ion exchange treatment is performed, it becomes difficult to reduce the overall thickness deviation of the support crystallized glass substrate. However, if the ion exchange treatment is not performed, such a problem can be solved.
また、本発明の支持結晶化ガラス基板の製造方法は、加工基板を支持するための支持結晶化ガラス基板の製造方法において、溶融ガラスを成形してガラス基板を得る成形工程と、加工基板の熱膨張係数に整合するように、該ガラス基板を熱処理して、支持結晶化ガラス基板の結晶化度を変化させる熱処理工程と、を備えることを特徴とするが、この技術的特徴は、既述であるため、詳細な説明を省略する。また、本発明の支持結晶化ガラス基板の製造方法は、加工基板を支持するための支持結晶化ガラス基板の製造方法において、溶融ガラスを成形してガラス基板を得る成形工程と、加工基板の熱膨張係数に整合するように、該ガラス基板を熱処理して、支持結晶化ガラス基板の析出結晶の割合を変化させる熱処理工程と、を備えることを特徴とするが、この技術的特徴は、既述であるため、詳細な説明を省略する。 In addition, the method for producing a supported crystallized glass substrate according to the present invention includes a forming step of forming a molten glass to obtain a glass substrate in the method for producing a supported crystallized glass substrate for supporting a processed substrate, and heat of the processed substrate. A heat treatment step of changing the crystallinity of the supporting crystallized glass substrate by heat-treating the glass substrate so as to match the expansion coefficient. Therefore, detailed description is omitted. In addition, the method for producing a supported crystallized glass substrate according to the present invention includes a forming step of forming a molten glass to obtain a glass substrate in the method for producing a supported crystallized glass substrate for supporting a processed substrate, and heat of the processed substrate. The glass substrate is heat-treated so as to match the expansion coefficient, and the heat treatment step of changing the ratio of the precipitated crystals of the supporting crystallized glass substrate is provided. Therefore, detailed description is omitted.
本発明の半導体パッケージの製造方法は、少なくとも加工基板と加工基板を支持するための支持結晶化ガラス基板とを備える積層体を作製する積層工程と、積層体中の加工基板に対して、加工処理を行う加工処理工程と、を備えると共に、支持結晶化ガラス基板が、上記の支持結晶化ガラス基板の製造方法により作製されていることが好ましい。 The manufacturing method of a semiconductor package of the present invention includes a stacking process for manufacturing a laminate including at least a processed substrate and a supporting crystallized glass substrate for supporting the processed substrate, and processing the processed substrate in the stack. It is preferable that the support crystallized glass substrate is produced by the above-described method for producing a support crystallized glass substrate.
本発明に係る積層体は、加工基板と支持結晶化ガラス基板の間に、接着層を有することが好ましい。接着層は、樹脂であることが好ましく、例えば、熱硬化性樹脂、光硬化性樹脂（特に紫外線硬化樹脂）等が好ましい。また半導体パッケージの製造工程における熱処理に耐える耐熱性を有するものが好ましい。これにより、半導体パッケージの製造工程で接着層が融解し難くなり、加工処理の精度を高めることができる。なお、加工基板と支持結晶化ガラス基板を容易に固定するため、紫外線硬化型テープを接着層として使用することもできる。 The laminate according to the present invention preferably has an adhesive layer between the processed substrate and the support crystallized glass substrate. The adhesive layer is preferably a resin, for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like. Moreover, what has the heat resistance which can endure the heat processing in the manufacturing process of a semiconductor package is preferable. Thereby, it becomes difficult to melt | dissolve an adhesive layer in the manufacturing process of a semiconductor package, and the precision of a process can be improved. In addition, in order to fix a process substrate and a support crystallized glass substrate easily, an ultraviolet curable tape can also be used as an adhesive layer.
本発明に係る積層体は、更に加工基板と支持結晶化ガラス基板の間に、より具体的には加工基板と接着層の間に、剥離層を有すること、或いは支持結晶化ガラス基板と接着層の間に、剥離層を有することが好ましい。このようにすれば、加工基板に対して、所定の加工処理を行った後に、加工基板を支持結晶化ガラス基板から剥離し易くなる。加工基板の剥離は、生産性の観点から、レーザー光等の照射光により行うことが好ましい。レーザー光源として、ＹＡＧレーザー（波長１０６４ｎｍ）、半導体レーザー（波長７８０〜１３００ｎｍ）等の赤外光レーザー光源を用いることができる。また、剥離層には、赤外線レーザーを照射することで分解する樹脂を使用することができる。また、赤外線を効率良く吸収し、熱に変換する物質を樹脂に添加することもできる。例えば、カーボンブラック、グラファイト粉、微粒子金属粉末、染料、顔料等を樹脂に添加することができる。 The laminate according to the present invention further has a release layer between the processed substrate and the support crystallized glass substrate, more specifically, between the processed substrate and the adhesive layer, or the support crystallized glass substrate and the adhesive layer. It is preferable to have a release layer between them. If it does in this way, it will become easy to peel a processed substrate from a support crystallized glass substrate, after performing predetermined processing processing to a processed substrate. Peeling of the processed substrate is preferably performed with irradiation light such as laser light from the viewpoint of productivity. As the laser light source, an infrared laser light source such as a YAG laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 to 1300 nm) can be used. Moreover, resin which decomposes | disassembles by irradiating an infrared laser can be used for a peeling layer. A substance that efficiently absorbs infrared rays and converts it into heat can also be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment, etc. can be added to the resin.
剥離層は、レーザー光等の照射光により「層内剥離」又は「界面剥離」が生じる材料で構成される。つまり一定の強度の光を照射すると、原子又は分子における原子間又は分子間の結合力が消失又は減少して、アブレーション（ａｂｌａｔｉｏｎ）等を生じ、剥離を生じさせる材料で構成される。なお、照射光の照射により、剥離層に含まれる成分が気体となって放出されて分離に至る場合と、剥離層が光を吸収して気体になり、その蒸気が放出されて分離に至る場合とがある。 The peeling layer is made of a material that causes “in-layer peeling” or “interfacial peeling” by irradiation light such as laser light. That is, when light of a certain intensity is irradiated, the bonding force between atoms or molecules in an atom or molecule disappears or decreases, and ablation or the like is caused to cause peeling. In addition, when the component contained in the release layer is released as a gas due to irradiation of irradiation light, the separation layer is released, and when the release layer absorbs light and becomes a gas, and its vapor is released, resulting in separation There is.
本発明に係る積層体において、支持結晶化ガラス基板は、加工基板よりも大きいことが好ましい。これにより、加工基板と支持結晶化ガラス基板を支持する際に、両者の中心位置が僅かに離間した場合でも、支持結晶化ガラス基板から加工基板の縁部が食み出し難くなる。 In the laminate according to the present invention, the support crystallized glass substrate is preferably larger than the processed substrate. As a result, when the processed substrate and the supporting crystallized glass substrate are supported, even if the center positions of both are slightly separated, the edge of the processed substrate is unlikely to protrude from the supporting crystallized glass substrate.
本発明の半導体パッケージの製造方法は、更に積層体を搬送する工程を有することが好ましい。これにより、加工処理の処理効率を高めることができる。なお、「積層体を搬送する工程」と「加工基板に対して、加工処理を行う工程」とは、別途に行う必要はなく、同時であってもよい。 It is preferable that the manufacturing method of the semiconductor package of this invention has the process of conveying a laminated body further. Thereby, the processing efficiency of a processing process can be improved. Note that the “process for transporting the laminate” and the “process for processing the processed substrate” do not need to be performed separately and may be performed simultaneously.
本発明の半導体パッケージの製造方法において、加工処理は、加工基板の一方の表面に配線する処理、或いは加工基板の一方の表面に半田バンプを形成する処理が好ましい。本発明の半導体パッケージの製造方法では、これらの処理時に加工基板が寸法変化し難いため、これらの工程を適正に行うことができる。 In the method for manufacturing a semiconductor package of the present invention, the processing is preferably performed by wiring on one surface of the processed substrate or forming solder bumps on one surface of the processed substrate. In the method for manufacturing a semiconductor package of the present invention, since the processed substrate is difficult to change in dimensions during these processes, these steps can be appropriately performed.
加工処理として、上記以外にも、加工基板の一方の表面（通常、支持結晶化ガラス基板とは反対側の表面）を機械的に研磨する処理、加工基板の一方の表面（通常、支持結晶化ガラス基板とは反対側の表面）をドライエッチングする処理、加工基板の一方の表面（通常、支持結晶化ガラス基板とは反対側の表面）をウェットエッチングする処理の何れかであってもよい。なお、本発明の半導体パッケージの製造方法では、加工基板に寸法変化（特に、反り）が発生し難いと共に、積層体全体の剛性を維持することができる。結果として、上記加工処理を適正に行うことができる。 In addition to the above processing, one surface of the processed substrate (usually the surface opposite to the supporting crystallized glass substrate) is mechanically polished, and one surface of the processed substrate (usually supporting crystallization) Either a process of dry etching the surface opposite to the glass substrate) or a process of wet etching one surface of the processed substrate (usually the surface opposite to the supporting crystallized glass substrate) may be used. In the semiconductor package manufacturing method of the present invention, a dimensional change (particularly, warpage) hardly occurs in the processed substrate, and the rigidity of the entire laminated body can be maintained. As a result, the above processing can be performed appropriately.
図面を参酌しながら、本発明を更に説明する。 The present invention will be further described with reference to the drawings.
図１は、本発明に係る積層体１の一例を示す概念斜視図である。図１では、積層体１は、支持結晶化ガラス基板１０と加工基板１１とを備えている。支持結晶化ガラス基板１０は、加工基板１１の寸法変化を防止するために、加工基板１１に貼着されている。支持結晶化ガラス基板１０と加工基板１１との間には、剥離層１２と接着層１３が配置されている。剥離層１２は、支持結晶化ガラス基板１０と接触しており、接着層１３は、加工基板１１と接触している。 FIG. 1 is a conceptual perspective view showing an example of a laminate 1 according to the present invention. In FIG. 1, the laminate 1 includes a supporting crystallized glass substrate 10 and a processed substrate 11. The support crystallized glass substrate 10 is attached to the processed substrate 11 in order to prevent a dimensional change of the processed substrate 11. A peeling layer 12 and an adhesive layer 13 are disposed between the support crystallized glass substrate 10 and the processed substrate 11. The release layer 12 is in contact with the support crystallized glass substrate 10, and the adhesive layer 13 is in contact with the processed substrate 11.
図１から分かるように、積層体１は、支持結晶化ガラス基板１０、剥離層１２、接着層１３、加工基板１１の順に積層配置されている。支持結晶化ガラス基板１０の形状は、加工基板１１に応じて決定されるが、図１では、支持結晶化ガラス基板１０及び加工基板１１の形状は、何れも略円板形状である。剥離層１２は、例えばレーザーを照射することで分解する樹脂を使用することができる。また、レーザー光を効率良く吸収し、熱に変換する物質を樹脂に添加することもできる。例えば、カーボンブラック、グラファイト粉、微粒子金属粉末、染料、顔料等を樹脂に添加することもできる。剥離層１２は、プラズマＣＶＤや、ゾル−ゲル法によるスピンコート等により形成される。接着層１３は、樹脂で構成されており、例えば、各種印刷法、インクジェット法、スピンコート法、ロールコート法等により塗布形成される。また、紫外線硬化型テープも使用可能である。接着層１３は、剥離層１２により加工基板１１から支持結晶化ガラス基板１０が剥離された後、溶剤等により溶解除去される。紫外線硬化型テープは、紫外線を照射した後、剥離用テープにより除去可能である。 As can be seen from FIG. 1, the laminated body 1 is laminated in the order of a support crystallized glass substrate 10, a release layer 12, an adhesive layer 13, and a processed substrate 11. The shape of the support crystallized glass substrate 10 is determined according to the processed substrate 11. In FIG. 1, the shapes of the support crystallized glass substrate 10 and the processed substrate 11 are both substantially disk shapes. For the release layer 12, for example, a resin that decomposes when irradiated with a laser can be used. A substance that efficiently absorbs laser light and converts it into heat can also be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment or the like can be added to the resin. The release layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like. The adhesive layer 13 is made of a resin, and is applied and formed by, for example, various printing methods, inkjet methods, spin coating methods, roll coating methods, and the like. An ultraviolet curable tape can also be used. After the support crystallized glass substrate 10 is peeled from the processed substrate 11 by the release layer 12, the adhesive layer 13 is dissolved and removed by a solvent or the like. The ultraviolet curable tape can be removed with a peeling tape after being irradiated with ultraviolet rays.
図２は、ｆａｎ ｏｕｔ型のＷＬＰの製造工程を示す概念断面図である。図２（ａ）は、支持部材２０の一方の表面上に接着層２１を形成した状態を示している。必要に応じて、支持部材２０と接着層２１の間に剥離層を形成してもよい。次に、図２（ｂ）に示すように、接着層２１の上に複数の半導体チップ２２を貼付する。その際、半導体チップ２２のアクティブ側の面を接着層２１に接触させる。次に、図２（ｃ）に示すように、半導体チップ２２を樹脂の封止材２３でモールドする。封止材２３は、圧縮成形後の寸法変化、配線を成形する際の寸法変化が少ない材料が使用される。続いて、図２（ｄ）、（ｅ）に示すように、支持部材２０から半導体チップ２２がモールドされた加工基板２４を分離した後、接着層２５を介して、支持結晶化ガラス基板２６と接着固定させる。その際、加工基板２４の表面の内、半導体チップ２２が埋め込まれた側の表面とは反対側の表面が支持結晶化ガラス基板２６側に配置される。このようにして、積層体２７を得ることができる。なお、必要に応じて、接着層２５と支持結晶化ガラス基板２６の間に剥離層を形成してもよい。更に、得られた積層体２７を搬送した後に、図２（ｆ）に示すように、加工基板２４の半導体チップ２２が埋め込まれた側の表面に配線２８を形成した後、複数の半田バンプ２９を形成する。最後に、支持結晶化ガラス基板２６から加工基板２４を分離した後に、加工基板２４を半導体チップ２２毎に切断し、後のパッケージング工程に供される（図２（ｇ））。 FIG. 2 is a conceptual cross-sectional view showing a manufacturing process of a fan-out type WLP. FIG. 2A shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. A peeling layer may be formed between the support member 20 and the adhesive layer 21 as necessary. Next, as shown in FIG. 2B, a plurality of semiconductor chips 22 are pasted on the adhesive layer 21. At that time, the surface on the active side of the semiconductor chip 22 is brought into contact with the adhesive layer 21. Next, as shown in FIG. 2C, the semiconductor chip 22 is molded with a resin sealing material 23. The sealing material 23 is made of a material having little dimensional change after compression molding and little dimensional change when forming a wiring. Subsequently, as shown in FIGS. 2D and 2E, after separating the processed substrate 24 on which the semiconductor chip 22 is molded from the support member 20, the support crystallized glass substrate 26 and the adhesive layer 25 are interposed. Adhere and fix. At that time, the surface of the processed substrate 24 opposite to the surface on which the semiconductor chip 22 is embedded is disposed on the support crystallized glass substrate 26 side. In this way, the laminate 27 can be obtained. In addition, you may form a peeling layer between the contact bonding layer 25 and the support crystallized glass substrate 26 as needed. Further, after the obtained laminated body 27 is conveyed, as shown in FIG. 2 (f), a wiring 28 is formed on the surface of the processed substrate 24 where the semiconductor chip 22 is embedded, and then a plurality of solder bumps 29 are formed. Form. Finally, after separating the processed substrate 24 from the support crystallized glass substrate 26, the processed substrate 24 is cut into semiconductor chips 22 for use in a subsequent packaging process (FIG. 2 (g)).
以下、本発明を実施例に基づいて説明する。なお、以下の実施例は単なる例示である。本発明は、以下の実施例に何ら限定されない。 Hereinafter, the present invention will be described based on examples. The following examples are merely illustrative. The present invention is not limited to the following examples.
表１、２は、試料Ｎｏ．１〜１３を示している。 Tables 1 and 2 show Sample No. 1-13 are shown.
試料Ｎｏ．１のガラス組成が、ＳｉＯ２ ６０．４質量％、Ａｌ２Ｏ３ ８．７質量％、Ｎａ２Ｏ １３．６質量％、Ｋ２Ｏ １２．７質量％、ＭｇＯ １．７質量％、ＣａＯ ２．６質量％、ＳｎＯ２ ０．２質量％になるように，試料Ｎｏ．２〜１３のガラス組成が、ＳｉＯ２ ７５．９質量％、Ａｌ２Ｏ３ ４．０質量％、Ｐ２Ｏ５ ２．１質量％、Ｌｉ２Ｏ ９．０質量％、Ｋ２Ｏ １．３質量％、ＭｇＯ ０．５質量％、ＳｒＯ １．５質量％、ＢａＯ １．０質量％、ＺｎＯ ０．５質量％、ＺｒＯ２ ４．０質量％、ＳｎＯ２ ０．２質量％になるように、ガラス原料を調合したガラスバッチを白金坩堝に入れ、１６００℃で４時間溶融した。ガラスバッチの溶解に際しては、白金スターラーを用いて攪拌し、均質化を行った。次いで、溶融ガラスをカーボン板上に流し出し、板状に成形した後、徐冷点より２０℃程度高い温度から、３℃／分で常温まで徐冷した。得られた結晶性ガラス試料について、電気炉を用いた熱処理により、表中に示す温度で表中に示す時間保持して、結晶核を生成させた後、表中に示す温度で表中に示す時間保持して、ガラスマトリクス中に結晶を成長させた。結晶を成長させた後、１℃／分の降温速度で常温まで冷却した。なお、試料Ｎｏ．１については、結晶を析出させるための熱処理処理を行っていない。得られた各試料について、析出結晶、３０〜３８０℃の温度範囲における平均線熱膨張係数ＣＴＥ３０−３８０℃、３０〜３００℃の温度範囲における平均線熱膨張係数ＣＴＥ３０−３００℃、３０〜２６０℃の温度範囲における平均線熱膨張係数ＣＴＥ３０−２６０℃、３０〜２２０℃の温度範囲における平均線熱膨張係数ＣＴＥ３０−２２０℃、アルカリ溶出を評価した。 Sample No. 1 is composed of SiO 2 60.4% by mass, Al 2 O 3 8.7% by mass, Na 2 O 13.6% by mass, K 2 O 12.7% by mass, MgO 1.7% by mass, CaO. Sample No. 2 was 2.6 mass% and SnO 2 0.2 mass%. Glass composition 2 to 13 are, SiO 2 75.9 wt%, Al 2 O 3 4.0 wt%, P 2 O 5 2.1 wt%, Li 2 O 9.0 wt%, K 2 O 1. 3 mass%, MgO 0.5 mass%, SrO 1.5 mass%, BaO 1.0 mass%, ZnO 0.5 mass%, ZrO 2 4.0 mass%, SnO 2 0.2 mass% Then, a glass batch prepared by mixing glass raw materials was put in a platinum crucible and melted at 1600 ° C. for 4 hours. In melting the glass batch, the mixture was stirred and homogenized using a platinum stirrer. Next, the molten glass was poured out on a carbon plate, formed into a plate shape, and then gradually cooled from a temperature about 20 ° C. higher than the annealing point to room temperature at 3 ° C./min. About the obtained crystalline glass sample, after holding for the time shown in the table at the temperature shown in the table by heat treatment using an electric furnace to generate crystal nuclei, the temperature shown in the table is shown in the table Crystals were grown in the glass matrix by holding for a period of time. After growing the crystal, it was cooled to room temperature at a temperature lowering rate of 1 ° C./min. Sample No. For No. 1, heat treatment for precipitating crystals was not performed. About each obtained sample, precipitation crystal | crystallization, average linear thermal expansion coefficient CTE 30-380 degreeC in the temperature range of 30-380 degreeC , average linear thermal expansion coefficient CTE 30-300 degreeC in the temperature range of 30-300 degreeC , 30- The average linear thermal expansion coefficient CTE 30-260 ° C in the temperature range of 260 ° C, the average linear thermal expansion coefficient CTE 30-220 ° C in the temperature range of 30-220 ° C , and alkali elution were evaluated.
３０〜３８０℃の温度範囲における平均線熱膨張係数ＣＴＥ３０−３８０℃、３０〜３００℃の温度範囲における平均線熱膨張係数ＣＴＥ３０−３００℃、３０〜２６０℃の温度範囲における平均線熱膨張係数ＣＴＥ３０−２６０℃、３０〜２２０℃の温度範囲における平均線熱膨張係数ＣＴＥ３０−２２０℃は、ディラトメーターで測定した値である。 Average linear thermal expansion coefficient CTE 30-380 ℃ in the temperature range of 30 to 380 ° C., an average linear thermal expansion coefficient CTE 30-300 ° C. in a temperature range of 30 to 300 ° C., an average linear thermal expansion in the temperature range of thirty to two hundred and sixty ° C. Coefficient CTE 30-260 ° C. The average linear thermal expansion coefficient CTE 30-220 ° C. in the temperature range of 30 to 220 ° C. is a value measured with a dilatometer .
析出結晶とその割合は、Ｘ線回折装置（リガク製ＲＩＮＴ−２１００）で評価したものである。なお、測定範囲を２θ＝１０〜６０°とした。 Precipitated crystals and their proportions are evaluated with an X-ray diffractometer (RINT-2100 manufactured by Rigaku). The measurement range was 2θ = 10 to 60 °.
結晶化度は、粉末法によりＸ線回折装置（リガク製ＲＩＮＴ−２１００）で評価したものである。具体的には、非晶質の質量に相当するハローの面積と、結晶の質量に相当するピークの面積とをそれぞれ算出した後、［ピークの面積］×１００／［ピークの面積＋ハローの面積］（％）の式により求めた値を指す。なお、測定範囲を２θ＝１０〜６０°とした。 The degree of crystallinity is evaluated by an X-ray diffractometer (RINT-2100 manufactured by Rigaku) by a powder method. Specifically, after calculating the area of the halo corresponding to the amorphous mass and the area of the peak corresponding to the mass of the crystal, [peak area] × 100 / [peak area + halo area] ] Indicates the value obtained by the formula (%). The measurement range was 2θ = 10 to 60 °.
アルカリ溶出は、ＪＩＳ Ｒ３５０２に基づいて測定したアルカリ溶出量が０．５ｍｇ未満であった場合を「○」、１．５ｍｇ／ｃｍ２超であった場合を「×」として評価したものである。 The alkali elution is evaluated as “◯” when the alkali elution amount measured based on JIS R3502 is less than 0.5 mg, and “x” when it exceeds 1.5 mg / cm 2 .
表１、２から明らかなように、試料Ｎｏ．２〜１３は、平均線熱膨張係数が高く、アルカリ溶出量が少なく、耐候性が良好であった。よって、試料Ｎｏ．２〜１３は、半導体パッケージの製造工程で加工基板の支持に用いる支持基板として好適であると考えられる。更に、試料Ｎｏ．２〜１３は、組成が同じであるが、熱処理条件が異なるため、結晶化度や析出結晶割合が異なっていた。特に熱処理条件が高温、長時間である程、結晶化度が高くなり、析出結晶中のα−クォーツの割合が高くなっていた。その結果、試料Ｎｏ．２〜１３は、平均線熱膨張係数が異なっていた。この知見を利用すれば、支持結晶化ガラス基板の熱膨張係数を加工基板の熱膨張係数に厳密に整合させることが可能になると考えられる。 As apparent from Tables 1 and 2, Sample No. Nos. 2 to 13 had a high average linear thermal expansion coefficient, a small amount of alkali elution, and good weather resistance. Therefore, sample no. Nos. 2 to 13 are considered to be suitable as the support substrate used for supporting the processed substrate in the manufacturing process of the semiconductor package. Furthermore, sample no. Nos. 2 to 13 have the same composition but different heat treatment conditions, so that the degree of crystallinity and the ratio of precipitated crystals were different. In particular, the higher the temperature and the longer the heat treatment conditions, the higher the crystallinity and the higher the α-quartz ratio in the precipitated crystals. As a result, sample no. 2 to 13 had different average linear thermal expansion coefficients. By utilizing this knowledge, it is considered that the thermal expansion coefficient of the support crystallized glass substrate can be strictly matched with the thermal expansion coefficient of the processed substrate.
一方、試料Ｎｏ．１は、アルカリ溶出量が多く耐候性が不良であり、また熱処理しても結晶が析出しなかった。 On the other hand, sample No. No. 1 had a large alkali elution amount and poor weather resistance, and no crystal was deposited even after heat treatment.
更に、試料Ｎｏ．２〜１３（全体板厚偏差：約５．５μｍ）について、φ３００ｍｍ×０．７ｍｍ厚に加工した後、その両表面を研磨装置により研磨処理した。具体的には、各試料の両表面を外径が相違する一対の研磨パットで挟み込み、各試料と一対の研磨パッドを共に回転させながら、各試料の両表面を研磨処理した。研磨処理の際、時折、結晶化ガラス基板の一部が研磨パッドから食み出すように制御した。なお、研磨パッドはウレタン製、研磨処理の際に使用した研磨スラリーの平均粒径は２．５μｍ、研磨速度は１５ｍ／分であった。得られた研磨処理済みの各各試料について、コベルコ科研社製のＳＢＷ−３３１ＭＬ／ｄにより全体板厚偏差と反り量を測定した。その結果、全体板厚偏差は、それぞれ１．０μｍ未満であり、反り量は、それぞれ３５μｍ以下であった。 Furthermore, sample no. 2 to 13 (overall plate thickness deviation: about 5.5 μm) were processed into φ300 mm × 0.7 mm thickness, and both surfaces thereof were polished by a polishing apparatus. Specifically, both surfaces of each sample were sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of each sample were polished while rotating each sample and the pair of polishing pads together. During the polishing process, control was sometimes performed so that a part of the crystallized glass substrate protruded from the polishing pad. The polishing pad was made of urethane, the average particle size of the polishing slurry used in the polishing treatment was 2.5 μm, and the polishing rate was 15 m / min. For each of the obtained polished samples, the overall plate thickness deviation and the warpage amount were measured by SBW-331ML / d manufactured by Kobelco Kaken. As a result, the overall plate thickness deviations were each less than 1.0 μm, and the warpage amounts were each 35 μm or less.
１、２７ 積層体
１０、２６ 支持結晶化ガラス基板
１１、２４ 加工基板
１２ 剥離層
１３、２１、２５ 接着層
２０ 支持部材
２２ 半導体チップ
２３ 封止材
２８ 配線
２９ 半田バンプ
1, 27 Laminate 10, 26 Support crystallized glass substrate 11, 24 Processed substrate 12 Peeling layer 13, 21, 25 Adhesive layer 20 Support member 22 Semiconductor chip 23 Sealing material 28 Wiring 29 Solder bump
Claims (14)
溶融ガラスを成形してガラス基板を得る成形工程と、該ガラス基板を熱処理して、二珪酸リチウム、α−クリストバライト、α−クォーツの内、一種又は二種以上が析出した支持結晶化ガラス基板を得る熱処理工程と、を備えることを特徴とする支持結晶化ガラス基板の製造方法。 In the manufacturing method of the support crystallized glass substrate for supporting the processed substrate,
A forming step of forming a glass substrate by forming molten glass, and a supporting crystallized glass substrate on which one or more of lithium disilicate, α-cristobalite, and α-quartz is deposited by heat-treating the glass substrate. And a heat treatment step for obtaining a support crystallized glass substrate.
積層体中の加工基板に対して、加工処理を行う加工処理工程と、を備えると共に、
支持結晶化ガラス基板が、請求項１〜９の何れかに記載の支持結晶化ガラス基板の製造方法により作製されていることを特徴とする半導体パッケージの製造方法。 A laminating step of producing a laminate including at least a processed substrate and a support crystallized glass substrate for supporting the processed substrate;
And a processing step for performing processing on the processing substrate in the laminate,
A method for manufacturing a semiconductor package, wherein the support crystallized glass substrate is produced by the method for manufacturing a support crystallized glass substrate according to any one of claims 1 to 9.
溶融ガラスを成形してガラス基板を得る成形工程と、加工基板の熱膨張係数に整合するように、該ガラス基板を熱処理して、支持結晶化ガラス基板の結晶化度を変化させる熱処理工程と、を備えることを特徴とする支持結晶化ガラス基板の製造方法。 In the manufacturing method of the support crystallized glass substrate for supporting the processed substrate,
A molding step of forming a molten glass to obtain a glass substrate, a heat treatment step of changing the crystallinity of the supporting crystallized glass substrate by heat-treating the glass substrate so as to match the thermal expansion coefficient of the processed substrate, A method for producing a supported crystallized glass substrate, comprising:
溶融ガラスを成形してガラス基板を得る成形工程と、加工基板の熱膨張係数に整合するように、該ガラス基板を熱処理して、支持結晶化ガラス基板の析出結晶の割合を変化させる熱処理工程と、を備えることを特徴とする支持結晶化ガラス基板の製造方法。 In the manufacturing method of the support crystallized glass substrate for supporting the processed substrate,
A molding step of forming a molten glass to obtain a glass substrate, and a heat treatment step of heat-treating the glass substrate so as to match a thermal expansion coefficient of the processed substrate to change a ratio of precipitated crystals of the supporting crystallized glass substrate; The manufacturing method of the support crystallized glass substrate characterized by the above-mentioned.
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| JP2016113341A (en) * | 2014-12-17 | 2016-06-23 | 日本電気硝子株式会社 | Support glass substrate and laminate using the same |
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