KR102509782B1 - Support glass substrate and laminate using same - Google Patents

Abstract

The technical problem of the present invention is to contribute to high-density mounting of semiconductor packages by inventing a support substrate that is difficult to cause a dimensional change of a processed substrate and a laminate using the same. The present invention is characterized in that the average coefficient of linear thermal expansion in the temperature range of 20 to 200°C is greater than 110×10 ^-7 /°C and not greater than 160×10 ^-7 /°C.

Description

Support glass substrate and laminate using the same {SUPPORT GLASS SUBSTRATE AND LAMINATE USING SAME}

The present invention relates to a supporting glass substrate and a laminate using the same, and more specifically, to a supporting glass substrate used for supporting a processed substrate in a semiconductor package manufacturing process and a laminate using the same.

BACKGROUND ART Miniaturization and weight reduction are required for portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance). In accordance with this, the mounting space of semiconductor chips used in these electronic devices is also severely limited, and high-density mounting of semiconductor chips has become a subject. Therefore, in recent years, high-density mounting of semiconductor packages has been attempted by a three-dimensional mounting technology, namely, by stacking semiconductor chips and connecting the semiconductor chips with wires.

Further, a conventional wafer level package (WLP) is manufactured by forming bumps in a wafer state and then separating them into pieces by dicing. However, in the conventional WLP, in addition to being difficult to increase the number of pins, since the semiconductor chip is mounted in a state where the back surface of the semiconductor chip is exposed, there is a problem that defects or the like of the semiconductor chip are likely to occur.

Therefore, a fan-out type WLP has been proposed as a new WLP. The fan-out type WLP can increase the number of pins and can prevent semiconductor chip defects and the like by protecting the edge of the semiconductor chip.

In the fan-out type WLP, a process substrate is formed by molding a plurality of semiconductor chips with a resin sealing material, and then a process of wiring on one surface of the process substrate, a process of forming solder bumps, and the like are included.

Since these processes involve heat treatment at about 200°C, there is a possibility that the sealing material may deform and the processing substrate may change in size. If the size of the processed substrate changes, it becomes difficult to provide high-density wiring on one surface of the processed substrate, and it also becomes difficult to accurately form solder bumps.

In order to suppress the dimensional change of the processed substrate, it is effective to use a support substrate for supporting the processed substrate. However, even when a support substrate is used, there are cases in which dimensional change of the processed substrate occurs.

The present invention has been made in view of the above circumstances, and its technical problem is to contribute to high-density mounting of semiconductor packages by inventing a support substrate that is difficult to cause a dimensional change of a processed substrate and a laminate using the same.

As a result of repeating various experiments, the present inventors have found that the above technical problem can be solved by adopting a glass substrate as a support substrate and strictly regulating the thermal expansion coefficient of the glass substrate, and proposes as the present invention. will be. That is, the supporting glass substrate of the present invention is characterized in that the average linear thermal expansion coefficient in the temperature range of 20 to 200°C exceeds 110×10 ^-7 /°C and is 160×10 ^-7 /°C or less. Here, "average linear thermal expansion coefficient in the temperature range of 20-200 degreeC" can be measured with a dilatometer.

The glass substrate is easy to smooth the surface and also has rigidity. Therefore, if a glass substrate is used as a support substrate, it becomes possible to firmly and accurately support a processing substrate. Further, the glass substrate easily transmits light such as ultraviolet light and infrared light. Therefore, when a glass substrate is used as the supporting substrate, the processing substrate and the supporting glass substrate can be easily fixed by forming an adhesive layer or the like with an ultraviolet curable adhesive or the like. In addition, the process substrate and the supporting glass substrate can be easily separated by providing a release layer or the like that absorbs infrared rays. Alternatively, the processing substrate and the supporting glass substrate can be easily separated by providing an adhesive layer or the like with an ultraviolet curable tape or the like.

In addition, in the supporting glass substrate of the present invention, the average linear thermal expansion coefficient in the temperature range of 20 to 200°C exceeds 110×10 ^-7 /°C and is regulated to 160×10 ^-7 /°C or less. This makes it easy to match the thermal expansion coefficients of the processing substrate and the supporting glass substrate when the proportion of the semiconductor chips is small and the proportion of the sealing material is high in the processing substrate. In addition, when the coefficients of thermal expansion of both are matched, it becomes easy to suppress dimensional change (in particular, warpage deformation) of the processed substrate during processing. As a result, it becomes possible to provide high-density wiring on one surface of the processing substrate, and also to form solder bumps accurately.

Second, the supporting glass substrate of the present invention is characterized in that the average linear thermal expansion coefficient in the temperature range of 30 to 380°C exceeds 115×10 ^-7 /°C and is 165×10 ^-7 /°C or less. Here, "average linear thermal expansion coefficient in the temperature range of 30-380 degreeC" can be measured with a dilatometer.

Thirdly, the supporting glass substrate of the present invention is preferably used for supporting a processing substrate in a semiconductor package manufacturing process.

Fourthly, it is preferable that the supporting glass substrate of the present invention has a matching surface inside the glass, that is, formed by overflow down-draw method.

Fifthly, the supporting glass substrate of the present invention preferably has a Young's modulus of 65 GPa or more. Here, "Young's modulus" refers to a value measured by the bending resonance method. In addition, 1 GPa corresponds to about 101.9 Kgf/mm 2 .

Sixth, the supporting glass substrate of the present invention contains 50 to 70% of SiO ₂ , 1 to 20% of Al ₂ O ₃ , 0 to 15% of B ₂ O _{3 ,} 0 to 10% of MgO, and CaO 0 in mass % as a glass composition. to 10%, SrO 0 to 7%, BaO 0 to 7%, ZnO 0 to 7%, Na ₂ O 10 to 30%, and K ₂ O 2 to 25%.

Seventh, the supporting glass substrate of the present invention contains 53 to 65% of SiO ₂ , 3 to 13% of Al ₂ O ₃ , 0 to 10% of B ₂ O _{3 ,} 0 to 6% of MgO, and CaO 0 in mass % as a glass composition. ∼10%, SrO 0∼5%, BaO 0∼5%, ZnO 0∼5%, Na ₂ O+K ₂ O 20∼40%, Na ₂ O 12∼21%, K ₂ O 5∼21% It is preferable to contain Here, “Na ₂ O+K ₂ O” is the total amount of Na ₂ O and K ₂ O.

Eighth, it is preferable that the supporting glass substrate of the present invention has a plate thickness of less than 2.0 mm, a plate thickness variation of 30 μm or less, and a warp amount of 60 μm or less. Here, "amount of warp" refers to the sum of the absolute value of the maximum distance between the highest position and the least square focal plane in the entire supporting glass substrate and the absolute value of the lowest position and the least square focal plane. For example, Kobelco Research Institute , can be measured by SBW-331ML/d manufactured by Inc.

Ninth, the laminate of the present invention is a laminate comprising at least a processing substrate and a supporting glass substrate for supporting the processing substrate, wherein the supporting glass substrate is the aforementioned supporting glass substrate.

Tenth, it is preferable that the laminate of the present invention includes a semiconductor chip molded with at least a sealing material on the processing substrate.

Eleventh, the method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate comprising at least a processing substrate and a supporting glass substrate for supporting the processing substrate, and a step of processing the processing substrate. , characterized in that the supporting glass substrate is the above supporting glass substrate.

Twelfth, in the manufacturing method of the semiconductor package of the present invention, it is preferable that the processing treatment includes a step of wiring on one surface of the processing substrate.

Thirteenth, in the semiconductor package manufacturing method of the present invention, it is preferable that the processing treatment includes a step of forming solder bumps on one surface of the processing substrate.

Fourteenth, the method for manufacturing a semiconductor package of the present invention is characterized in that it is produced by the above method for manufacturing a semiconductor package.

Fifteenth, the electronic device of the present invention is an electronic device including a semiconductor package, characterized in that the semiconductor package is the semiconductor package.

Sixteenth, the glass substrate of the present invention contains 50 to 70% of SiO ₂ , 1 to 20% of Al ₂ O ₃ , 0 to 15% of B ₂ O ₃ , 0 to 10% of MgO, and 0 to CaO in mass% as a glass composition. 10%, SrO 0 to 7%, BaO 0 to 7%, ZnO 0 to 7%, Na ₂ O 10 to 30%, K ₂ O 2 to 25%, containing in the temperature range of 20 to 200 ° C. It is characterized in that the average coefficient of linear thermal expansion exceeds 110×10 ^-7 /°C and is 160×10 ^-7 /°C or less.

Seventeenth, the glass substrate of the present invention contains 50 to 70% of SiO ₂ , 1 to 20% of Al ₂ O ₃ , 0 to 15% of B ₂ O ₃ , 0 to 10% of MgO, and 0 to CaO in mass% as a glass composition. 10%, SrO 0 to 7%, BaO 0 to 7%, ZnO 0 to 7%, Na ₂ O 10 to 30%, K ₂ O 2 to 25%, containing in the temperature range of 30 to 380 ° C. It is characterized in that the average coefficient of linear thermal expansion is greater than 115×10 ^-7 /°C and less than or equal to 165×10 ^-7 /°C.

1 is a conceptual perspective view showing an example of a laminate of the present invention.
Fig. 2 is a conceptual sectional view showing a manufacturing process of a fan-out type WLP.

In the supporting glass substrate of the present invention, it is more than 110 × 10 ^-7 /°C and less than or equal to 160 × 10 ^-7 /°C, preferably 115 × 10 ^-7 /°C or more and less than or equal to 155 × 10 ^-7 /°C, particularly It is preferably 120×10 ^-7 /°C or higher and 150×10 ^-7 /°C or lower. When the average linear thermal expansion coefficient in the temperature range of 20 to 200°C is outside the above range, it becomes difficult to match the thermal expansion coefficients of the processing substrate and the supporting glass substrate. And, when the coefficients of thermal expansion of both are mismatched, dimensional change (in particular, warpage deformation) of the processed substrate tends to occur during processing.

The average coefficient of linear thermal expansion in the temperature range of 30 to 380°C is greater than 115×10 ^-7 /°C and is 165×10 ^-7 /°C or less, preferably 120×10 ^-7 /°C or more and 160×10 ^-7 /°C or less, particularly preferably 125 × 10 ^-7 /°C or more and 155 × 10 ^-7 /°C or less. When the average coefficient of linear thermal expansion in the temperature range of 30 to 380°C is out of the above range, it becomes difficult to match the thermal expansion coefficient between the processing substrate and the supporting glass substrate. And, when the coefficients of thermal expansion of both are mismatched, dimensional change (particularly, warpage deformation) of the processed substrate tends to occur during processing.

The supporting glass substrate of the present invention contains 50 to 70% SiO ₂ , 1 to 20% Al ₂ O ₃ , 0 to 15% B ₂ O ₃ , 0 to 10% MgO, 0 to 10% CaO, It is preferable to contain 0-7% of SrO, 0-7% of BaO, 0-7% of ZnO, 10-30% of Na ₂ O, and 2-25% of K ₂ O. As described above, the reason for limiting the content of each component is shown below. In addition, in the explanation of the content of each component, the % display shows the mass % unless otherwise specified.

SiO ₂ is a main component forming the skeleton of glass. The content of SiO ₂ is preferably 50 to 70%, 53 to 67%, 55 to 65%, 56 to 63%, particularly 57 to 62%. When the content of SiO ₂ is too small, the Young's modulus and the acid resistance tend to decrease. On the other hand, when the content of SiO ₂ is too large, the high temperature viscosity increases and the meltability tends to decrease, and devitrification crystals such as cristobalite tend to precipitate and the liquidus temperature tends to increase.

While Al ₂ O ₃ is a component that increases the Young's modulus, it is a component that suppresses phase separation and devitrification. The content of Al ₂ O ₃ is preferably 1 to 20%, 2 to 16%, 2.5 to 14%, 3 to 12%, 3.5 to 10%, particularly 4 to 8%. When the content of Al ₂ O ₃ is too small, the Young's modulus tends to decrease, and the glass tends to be separated and devitrified. On the other hand, when the content of Al ₂ O ₃ is too large, the high-temperature viscosity increases and the meltability and formability tend to decrease.

B ₂ O ₃ is a component that improves meltability and resistance to devitrification, and also improves the ease of occurrence of scratches and increases strength. The content of B ₂ O ₃ is preferably 0 to 15%, 0 to 10%, 0 to 8%, 0 to 5%, 0 to 3%, particularly 0 to 1%. When the content of B ₂ O ₃ is too large, the Young's modulus and acid resistance tend to decrease.

From the viewpoint of increasing the Young's modulus, Al ₂ O ₃ -B ₂ O ₃ is preferably more than 0%, 1% or more, 3% or more, 5% or more, particularly preferably 7% or more. In addition, “Al ₂ O ₃ -B ₂ O ₃ ” refers to a value obtained by subtracting the content of B ₂ O ₃ from the content of Al ₂ O ₃ .

MgO is a component that lowers high-temperature viscosity and increases meltability, and among alkaline earth metal oxides, it is a component that remarkably improves Young's modulus. The content of MgO is preferably 0 to 10%, 0 to 8%, 0 to 7%, 0.1 to 6%, 0.5 to 5%, particularly 1 to 4%. When there is too much content of MgO, devitrification resistance will fall easily.

CaO is a component that lowers high-temperature viscosity and remarkably improves meltability. In addition, among the alkaline earth metal oxides, since the raw material to be introduced is relatively inexpensive, it is a component that lowers the batch cost. The content of CaO is preferably 0 to 10%, 0.5 to 6%, 1 to 5%, particularly 2 to 4%. When there is too much content of CaO, glass will become easy to devitrify. Moreover, when content of CaO is too small, it will become difficult to enjoy the said effect.

SrO is a component that suppresses phase separation and is also a component that enhances devitrification resistance. The content of SrO is preferably 0 to 7%, 0 to 5%, 0 to 3%, particularly less than 0 to 1%. When there is too much content of SrO, batch cost will become easy to raise.

BaO is a component that enhances devitrification resistance. The content of BaO is preferably 0 to 7%, 0 to 5%, 0 to 3%, and less than 0 to 1%. When the content of BaO is too large, the batch cost tends to increase.

The mass ratio CaO/(MgO+CaO+SrO+BaO) is preferably 0.5 or more, 0.6 or more, 0.7 or more, 0.8 or more, particularly preferably 0.9 or more. When the mass ratio CaO/(MgO+CaO+SrO+BaO) is too small, raw material costs tend to rise rapidly. In addition, "CaO/(MgO+CaO+SrO+BaO)" refers to the value obtained by dividing the content of CaO by the total amount of MgO, CaO, SrO and BaO.

ZnO is a component that significantly improves meltability by lowering high-temperature viscosity. The content of ZnO is preferably 0 to 7%, 0 to 5%, 0 to 3%, and 0.1 to less than 1%. When the content of ZnO is too small, it becomes difficult to obtain the above effects. Moreover, when there is too much content of ZnO, glass will become easy to devitrify.

Na ₂ O and K ₂ O are important components for regulating the average linear thermal expansion coefficient in the temperature range of 20 to 200°C to more than 110 × 10 ^-7 /°C to 160 × 10 ^-7 /°C, and also have high-temperature viscosity. It is a component contributing to the initial melting of glass raw materials while significantly improving the meltability by lowering the. The content of Na ₂ O + K ₂ O is preferably 20 to 40%, 23 to 38%, 25 to 36%, 26 to 34%, particularly 27 to 33%. When the content of Na ₂ O+K ₂ O is too small, there is a possibility that the thermal expansion coefficient is lowered unreasonably in addition to the melting property being easily lowered. On the other hand, if the content of Na ₂ O+K ₂ O is too large, there is a possibility that the thermal expansion coefficient becomes unreasonably high.

Na ₂ O is an important component for regulating the average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C. to more than 110 to 160 × 10 ^-7 / ° C. In addition, it is a component contributing to melting of the initial stage of glass raw materials. The content of Na ₂ O is preferably 10 to 30%, 12 to 25%, 13 to 22%, 14 to 21%, particularly 15 to 20%. When the content of Na ₂ O is too small, in addition to easily lowering the meltability, there is a possibility that the coefficient of thermal expansion is unreasonably low. On the other hand, when the content of Na ₂ O is too large, there is a possibility that the thermal expansion coefficient becomes unreasonably high.

K ₂ O is an important component for regulating the average coefficient of linear thermal expansion in the temperature range of 20 to 200 ° C. to more than 110 to 160 × 10 ^-7 / ° C. In addition, it is a component contributing to melting of the initial stage of glass raw materials. The content of K ₂ O is preferably 2 to 25%, 5 to 25%, 7 to 22%, 8 to 20%, 9 to 19%, particularly 10 to 18%. When the content of K ₂ O is too small, there is a possibility that the thermal expansion coefficient is lowered unreasonably in addition to the melting property being easily lowered. On the other hand, if the content of K ₂ O is too large, there is a possibility that the thermal expansion coefficient becomes unreasonably high.

The mass ratio Al ₂ O ₃ /(Na ₂ O + K ₂ O) is preferably from the viewpoint of regulating the average coefficient of linear thermal expansion in the temperature range of 20 to 200 ° C. to more than 110 to 160 × 10 ^-7 / ° C. 0.05 to 0.7, 0.08 to 0.6, 0.1 to 0.5, 0.12 to 0.4, particularly 0.14 to 0.3. In addition, "Al ₂ O ₃ /(Na ₂ O + K ₂ O)" is a value obtained by dividing the content of Al ₂ O ₃ by the total amount of Na ₂ O and K ₂ O.

In addition to the above components, other components may be introduced as optional components. In addition, the content of components other than the above components is preferably 10% or less in total, particularly preferably 5% or less, from the viewpoint of accurately enjoying the effects of the present invention.

Fe ₂ O ₃ is a component that can be introduced as an impurity component or a clarifier component. However, when the content of Fe ₂ O ₃ is too large, there is a possibility that the transmittance of ultraviolet light may decrease. That is, when the content of Fe ₂ O ₃ is too large, it becomes difficult to appropriately attach and detach the processing substrate and the supporting glass substrate through the adhesive layer and the release layer. Therefore, the content of Fe ₂ O ₃ is preferably 0.05% or less, 0.03% or less, particularly 0.02% or less. In the present invention, "Fe ₂ O ₃ " includes divalent iron oxide and trivalent iron oxide, and divalent iron oxide is treated as Fe ₂ O ₃ . Regarding other oxides, they shall be handled in the same way as the oxides of the mark.

Although As ₂ O ₃ acts effectively as a refining agent, from an environmental point of view, it is preferable to reduce this component as much as possible. The content of As ₂ O ₃ is preferably 1% or less, 0.5% or less, particularly 0.1% or less, and it is preferable not to contain it substantially. Here, “substantially not containing As ₂ O ₃ ” refers to a case where the content of As ₂ O ₃ in the glass composition is less than 0.05%.

Sb ₂ O ₃ is a component having a good refining effect in a low temperature region. The content of Sb ₂ O ₃ is preferably 0 to 1%, 0.01 to 0.7%, particularly 0.05 to 0.5%. When the content of Sb ₂ O ₃ is too large, the glass becomes easily colored. In addition, when the content of Sb ₂ O ₃ is too small, it becomes difficult to enjoy the above effects.

SnO ₂ is a component that has a good refining action in a high-temperature region and is also a component that lowers the high-temperature viscosity. The content of SnO ₂ is preferably 0 to 1%, 0.001 to 1%, 0.01 to 0.9%, particularly 0.05 to 0.7%. When the content of SnO ₂ is too large, loss of clarity crystals of SnO ₂ tend to precipitate. Moreover, when content of _SnO2 is too small, it becomes difficult to enjoy the said effect.

In addition, as long as the glass properties are not impaired, metal powders such as F, Cl, SO ₃ , C or Al and Si may be introduced up to about 3% each as a refining agent. In addition, CeO ₂ or the like can be introduced up to about 3%, but it is necessary to pay attention to the decrease in ultraviolet transmittance.

Cl is a component that promotes melting of glass. When Cl is introduced into the glass composition, the melting temperature can be lowered and the refining action can be promoted, and as a result, it becomes easier to achieve a lower melting cost and a longer life of the glass manufacturing kiln. However, when the content of Cl is too large, there is a possibility of corroding metal parts around the glass-making kiln. Therefore, the Cl content is preferably 3% or less, 1% or less, 0.5% or less, particularly 0.1% or less.

P ₂ O ₅ is a component capable of suppressing the precipitation of devitrified crystals. However, when a large amount of P ₂ O ₅ is introduced, phase separation of the glass becomes easy. Therefore, the content of P ₂ O ₅ is preferably 0 to 2.5%, 0 to 1.5%, 0 to 0.5%, particularly 0 to 0.3%.

TiO ₂ is a component that reduces the high-temperature viscosity and enhances the meltability, and suppresses solarization. However, when a large amount of TiO ₂ is introduced, the glass is colored and the transmittance tends to decrease. Therefore, the content of TiO ₂ is preferably 0 to 5%, 0 to 3%, 0 to 1%, particularly 0 to 0.02%.

ZrO ₂ is a component that improves chemical resistance and Young's modulus. However, when a large amount of ZrO ₂ is introduced, the glass tends to devitrify, and since the introduced raw material is sparingly soluble, there is a possibility that undissolved crystalline foreign matter may be mixed into the product substrate. Therefore, the content of ZrO ₂ is preferably 0 to 5%, 0 to 3%, 0 to 1%, particularly 0 to 0.5%.

Y ₂ O ₃ , Nb ₂ O ₅ , and La ₂ O ₃ have functions to increase strain point and Young's modulus. However, when the content of each of these components is 5%, particularly more than 1%, there is a risk that the batch cost and product cost will rise rapidly.

The supporting glass substrate of the present invention preferably has the following characteristics.

The liquidus temperature is preferably less than 1150 ° C, less than 1120 ° C, less than 1100 ° C, less than 1080 ° C, less than 1050 ° C, less than 1010 ° C, less than 980 ° C, less than 960 ° C, less than 940 ° C, less than 920 ° C, less than 900 ° C, In particular, it is 880 degreeC or less. In this way, since it becomes easy to shape a glass substrate by the down-draw method, especially the overflow down-draw method, it becomes easy to produce a glass substrate with a small plate thickness, and the plate thickness is reduced even without polishing the surface or by a small amount of polishing. Variation can be reduced, and as a result, the manufacturing cost of a glass substrate can also be reduced. Moreover, it becomes easy to prevent a situation in which devitrification crystal|crystallization arises and productivity of a glass substrate falls during the manufacturing process of a glass substrate. Here, the "liquid temperature" is the temperature at which crystals are precipitated by placing the glass powder remaining on the 50 mesh (300 µm) after passing through a standard sieve of 30 mesh (500 µm) into a platinum boat and maintaining the temperature gradient furnace for 24 hours. It can be calculated by measuring.

The viscosity at liquidus temperature is preferably 10 ^4.3 dPa·s or more, 10 ^4.6 dPa·s or more, 10 ^5.0 dPa·s or ^more , ^{10 5.2 dPa ·} s or more, particularly 10 ^{5.3 dPa} ·s. It is more than s. In this way, since it becomes easy to shape a glass substrate by the down-draw method, especially the overflow down-draw method, it becomes easy to produce a glass substrate with a small plate thickness, and the plate thickness is reduced even without polishing the surface or by a small amount of polishing. Variation can be increased, and as a result, the manufacturing cost of the glass substrate can be reduced. Moreover, it becomes easy to prevent a situation in which devitrification crystal|crystallization arises and productivity of a glass substrate falls during the manufacturing process of a glass substrate. Here, "viscosity at liquidus temperature" can be measured by a platinum ball pulling method. Further, the viscosity at the liquidus temperature is an index of moldability, and the higher the viscosity at the liquidus temperature, the better the moldability.

The temperature at 10 ^2.5 dPa·s is preferably 1480°C or less, 1400°C or less, 1350°C or less, 1300°C or less, particularly 1100 to 1250°C or less ^. When the temperature at 10 ^2.5 dPa·s rises, the meltability decreases ^and the manufacturing cost of the glass substrate soars. Here, "temperature at 10 ^2.5 dPa·s" can be measured by a platinum ball pulling method ^. The temperature at 10 ^{2.5 dPa} ·s corresponds to the melting temperature, and the lower the temperature, the better the melting property.

In the supporting glass substrate of the present invention, the Young's modulus is preferably 65 GPa or more, 67 GPa or more, 68 GPa or more, 69 GPa or more, particularly 70 GPa or more. If the Young's modulus is too low, it becomes difficult to maintain the rigidity of the laminate, and deformation, warping, and breakage of the processed substrate are likely to occur.

The supporting glass substrate of the present invention is preferably formed by a down-draw method, particularly an overflow down-draw method. The overflow down-draw method is a method of producing a glass substrate by causing molten glass to overflow from both sides of a heat-resistant gutter-like structure and stretching and molding downward while bringing the overflowing molten glass together at the lowermost end of the gutter-like structure. In the overflow down-draw method, the surface to be the surface of the glass substrate is molded in the state of a free surface without contacting the refractory in the groove. For this reason, while it becomes easy to produce a glass substrate with a small plate|board thickness, even if it does not grind|polish the surface, plate|board thickness variation can be reduced. Alternatively, the overall sheet thickness variation can be reduced to less than 2.0 µm, particularly less than 1.0 µm, by a small amount of polishing. As a result, the manufacturing cost of a glass substrate can be reduced. In addition, the structure and material of the trough-like structure are not particularly limited as long as desired dimensions and surface accuracy can be realized. In addition, when performing downward stretch molding, the method of applying force is not particularly limited either. For example, a method of rotating and stretching a heat-resistant roll having a sufficiently large width while in contact with the glass may be employed, or a method of stretching a plurality of pairs of heat-resistant rolls by bringing them into contact only near the end face of the glass may be employed. .

As a method of forming the glass substrate, in addition to the overflow down-draw method, for example, a slot down method, a re-draw method, a float method, or the like can also be employed.

The glass substrate of the present invention preferably has a substantially disc shape or wafer shape, and the diameter thereof is preferably 100 mm or more and 500 mm or less, particularly preferably 150 mm or more and 450 mm or less. In this way, it becomes easy to apply to the manufacturing process of a semiconductor package. If necessary, you may process it into a shape other than that, for example, a shape, such as a rectangle.

In the glass substrate of the present invention, the roundness is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, particularly preferably 0.03 mm or less. It becomes easier to apply to the manufacturing process of a semiconductor package, so that roundness is small. Also, the definition of roundness is a value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer.

In the supporting glass substrate of the present invention, the plate thickness is preferably less than 2.0 mm, less than 1.5 mm, less than 1.2 mm, less than 1.1 mm, less than 1.0 mm, and particularly less than 0.9 mm. Since the mass of a laminate becomes light so that plate thickness becomes thin, handling property improves. On the other hand, when the plate thickness is too thin, the strength of the supporting glass substrate itself decreases, making it difficult to achieve the function as a supporting substrate. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, and particularly more than 0.7 mm.

In the supporting glass substrate of the present invention, the plate thickness deviation is preferably 30 μm or less, 20 μm or less, 10 μm or less, 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, particularly 0.1 μm or less less than ~1 μm. Further, the arithmetic mean roughness (Ra) is preferably 100 nm or less, 50 nm or less, 20 nm or less, 10 nm or less, 5 nm or less, 2 nm or less, 1 nm or less, particularly 0.5 nm or less. The higher the surface precision, the easier it is to increase the processing precision. In particular, since the wiring precision can be increased, high-density wiring can be achieved. In addition, the strength of the supporting glass substrate is improved, making it difficult to break the supporting glass substrate and the laminate. Moreover, the number of reuses of the supporting glass substrate can be increased. In addition, "arithmetic mean roughness (Ra)" can be measured by a stylus type surface roughness machine or an atomic force microscope (AFM).

It is preferable that the supporting glass substrate of the present invention is formed by polishing the surface after molding by the overflow down-draw method. In this way, it is easy to control the sheet thickness deviation to 2 μm or less, 1 μm or less, and particularly less than 1 μm.

In the supporting glass substrate of the present invention, the amount of warp is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 to 45 μm, particularly 5 to 40 μm. The smaller the amount of warp, the easier it is to increase the processing accuracy. In particular, since the wiring precision can be increased, high-density wiring can be achieved.

In the supporting glass substrate of the present invention, the ultraviolet transmittance in the plate thickness direction and wavelength of 300 nm is preferably 40% or more, 50% or more, 60% or more, 70% or more, particularly 80% or more. When the ultraviolet transmittance is too low, it becomes difficult to adhere the processing substrate and the support substrate with the adhesive layer by irradiation with ultraviolet light. In addition, when an adhesive layer or the like is formed with an ultraviolet curable tape or the like, it becomes difficult to easily separate the processing substrate from the supporting glass substrate.

Further, "ultraviolet transmittance in the plate thickness direction and wavelength of 300 nm" can be evaluated by measuring the spectral transmittance at a wavelength of 300 nm using a double beam spectrophotometer, for example.

The supporting glass substrate of the present invention is preferably not chemically strengthened from the viewpoint of reducing the amount of warp, and preferably chemically strengthened from the viewpoint of mechanical strength. That is, it is preferable not to have a compressive stress layer on the surface from the viewpoint of reducing the amount of warp, and it is preferable to have a compressive stress layer on the surface from the viewpoint of mechanical strength.

The laminate of the present invention is characterized in that the laminate includes at least a processing substrate and a supporting glass substrate for supporting the processing substrate, wherein the supporting glass substrate is the supporting glass substrate. Here, the technical characteristics (suitable configuration, effect) of the laminate of the present invention overlap with the technical characteristics of the supporting glass substrate of the present invention. Therefore, in this specification, detailed description about the overlapping part is omitted.

The laminate of the present invention preferably has an adhesive layer between the processing substrate and the supporting glass substrate. The adhesive layer is preferably a resin, for example, a thermosetting resin or a photocurable resin (particularly an ultraviolet curable resin) or the like is preferable. In addition, it is preferable to have heat resistance to withstand heat treatment in the manufacturing process of the semiconductor package. This makes it difficult for the adhesive layer to melt in the manufacturing process of the semiconductor package, thereby increasing the precision of processing. Further, in order to easily fix the processing substrate and the supporting glass substrate, an ultraviolet curable tape may be used as an adhesive layer.

The laminate of the present invention preferably further has a peeling layer between the processing substrate and the supporting glass substrate, more specifically between the processing substrate and the adhesive layer, or further has a peeling layer between the supporting glass substrate and the adhesive layer. In this way, it becomes easy to separate the processed substrate from the supporting glass substrate after the predetermined processing is performed on the processed substrate. It is preferable to perform peeling of a processing board|substrate by irradiation light, such as a laser beam, from a viewpoint of productivity. As a laser light source, an infrared laser light source such as a YAG laser (wavelength: 1064 nm) or a semiconductor laser (wavelength: 780 to 1300 nm) can be used. In addition, a resin that is decomposed by irradiation with an infrared laser can be used for the peeling layer. In addition, a substance that efficiently absorbs infrared rays and converts them into heat may be added to the resin. For example, carbon black, graphite powder, particulate metal powder, dyes, pigments and the like can be added to the resin.

The peeling layer is composed of a material that undergoes "intralayer peeling" or "interfacial peeling" by irradiation light such as a laser beam. That is, when light of a certain intensity is irradiated, the bonding force between atoms or molecules between atoms or molecules is lost or reduced, resulting in ablation or the like, resulting in exfoliation. In addition, there are cases in which components contained in the peeling layer become gas and are released by irradiation with irradiation light, leading to separation, and cases where the release layer absorbs light and becomes gas, and the vapor is released leading to separation.

In the laminate of the present invention, the supporting glass substrate is preferably larger than the processed substrate. This makes it difficult for the edge of the processing substrate to protrude from the supporting glass substrate even when the center positions of the processing substrate and the supporting glass substrate are slightly separated from each other when supporting the processing substrate.

The method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate comprising at least a processing substrate and a supporting glass substrate for supporting the processing substrate, and a step of processing the processing substrate, and the supporting glass substrate This is the supporting glass substrate. Here, the technical features (suitable configuration, effect) of the manufacturing method of the semiconductor package of the present invention overlap with the technical features of the supporting glass substrate and laminate of the present invention. Therefore, in this specification, detailed description about the overlapping part is omitted.

The method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processing substrate and a supporting glass substrate for supporting the processing substrate. A laminate comprising at least a processing substrate and a supporting glass substrate for supporting the processing substrate has the above material configuration.

It is preferable that the manufacturing method of the semiconductor package of this invention further has the process of conveying a laminated body. Thereby, the process efficiency of a processing process can be improved. In addition, the "step of conveying the laminate" and the "step of processing the processed substrate" do not need to be performed separately, and may be performed simultaneously.

In the manufacturing method of the semiconductor package of the present invention, the processing treatment is preferably a processing of wiring on one surface of the processing substrate or a processing of forming solder bumps on one surface of the processing substrate. In the manufacturing method of the semiconductor package of the present invention, since the size of the processing substrate is difficult to change during these treatments, these steps can be appropriately performed.

In addition to the above processing treatment, one surface of the processed substrate (usually, the surface opposite to the supporting glass substrate) is mechanically polished, and one surface of the processed substrate (usually, the surface opposite to the supporting glass substrate) is dried. Any of a process of etching and a process of wet etching one surface of the processed substrate (usually, the surface on the opposite side to the supporting glass substrate) may be used. In addition, in the manufacturing method of the semiconductor package of the present invention, it is possible to maintain the rigidity of the laminated body while making it difficult for warpage to occur in the processing substrate. As a result, the processing treatment can be appropriately performed.

The semiconductor package of the present invention is characterized in that it is manufactured by the method for manufacturing a semiconductor package. Here, the technical features (suitable configuration, effect) of the semiconductor package of the present invention overlap with the technical features of the manufacturing method of the supporting glass substrate, laminate, and semiconductor package of the present invention. Therefore, in this specification, detailed description about the overlapping part is omitted.

The electronic device of the present invention is an electronic device having a semiconductor package, characterized in that the semiconductor package is the semiconductor package. Here, the technical characteristics (suitable configuration, effect) of the electronic device of the present invention overlap with the technical characteristics of the supporting glass substrate, the laminate, the manufacturing method of the semiconductor package, and the semiconductor package of the present invention. Therefore, in this specification, detailed description about the overlapping part is omitted.

The present invention will be further described with reference to the drawings.

1 is a conceptual perspective view illustrating an example of a laminate 1 of the present invention. In FIG. 1 , the laminate 1 includes a supporting glass substrate 10 and a processing substrate 11 . The supporting glass substrate 10 is adhered to the processing substrate 11 in order to prevent dimensional change of the processing substrate 11 . A peeling layer 12 and an adhesive layer 13 are disposed between the supporting glass substrate 10 and the processed substrate 11 . The release layer 12 is in contact with the supporting glass substrate 10 and the adhesive layer 13 is in contact with the processing substrate 11 .

As can be seen from FIG. 1 , in the laminate 1, the supporting glass substrate 10, the peeling layer 12, the adhesive layer 13, and the processed substrate 11 are stacked and arranged in this order. The shape of the supporting glass substrate 10 is determined by the processed substrate 11, but in FIG. 1, the shapes of the supporting glass substrate 10 and the processed substrate 11 are both substantially disk-shaped. For the peeling layer 12, a resin that is decomposed by, for example, irradiating a laser can be used. In addition, a substance that efficiently absorbs laser light and converts it into heat may be added to the resin. For example, carbon black, graphite powder, particulate metal powder, dyes, pigments and the like may be added to the resin. The release layer 12 is formed by plasma CVD or spin coating by a sol-gel method. The adhesive layer 13 is made of resin, and is coated and formed by, for example, various printing methods, inkjet methods, spin coating methods, roll coating methods, and the like. In addition, an ultraviolet curable tape can also be used. The adhesive layer 13 is removed by dissolving with a solvent or the like after the supporting glass substrate 10 is separated from the processing substrate 11 by the peeling layer 12 . After the ultraviolet curable tape is irradiated with ultraviolet rays, it can be removed with a tape for peeling.

Fig. 2 is a conceptual sectional view showing a manufacturing process of a fan-out type WLP. Fig. 2(a) shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. If necessary, a peeling layer may be formed between the support member 20 and the adhesive layer 21. good night. Next, as shown in FIG. 2( b ), a plurality of semiconductor chips 22 are attached on the adhesive layer 21 . At that time, the surface of the semiconductor chip 22 on the active side is brought into contact with the adhesive layer 21 . Next, as shown in Fig. 2(c), the semiconductor chip 22 is molded with a resin sealant 23. The sealing material 23 is made of a material that has little dimensional change after compression molding or dimensional change during wiring molding. Subsequently, as shown in FIGS. 2(d) and (e), after separating the processing substrate 24 on which the semiconductor chip 22 is molded from the support member 20, the support glass is passed through the adhesive layer 25. It is adhesively fixed with the substrate 26. At this time, the surface of the processed substrate 24 on the opposite side to the surface on the side where the semiconductor chips 22 are embedded is placed on the supporting glass substrate 26 side. In this way, the laminate 27 can be obtained. Moreover, you may form a peeling layer between the adhesive layer 25 and the support glass substrate 26 as needed. Further, after conveying the obtained laminate 27, as shown in FIG. 2(f), wiring 28 is formed on the surface of the processed substrate 24 on the side where the semiconductor chips 22 are embedded, A plurality of solder bumps 29 are formed. Finally, after separating the processing substrate 24 from the supporting glass substrate 26, the processing substrate 24 is cut for each semiconductor chip 22 and used for a later packaging step (FIG. 2(g)).

Example 1

Hereinafter, the present invention will be described based on examples. Incidentally, the following examples are merely illustrative. The present invention is not limited to the following examples at all.

Tables 1 to 5 show Examples (Sample Nos. 1 to 75) of the present invention.

First, a glass batch in which glass raw materials were prepared so as to have the glass composition in the table was placed in a platinum crucible and melted at 1500°C for 4 hours. In the dissolution of the glass batch, homogenization was performed by stirring using a platinum stirrer. Subsequently, the molten glass was poured onto a carbon plate, formed into a plate shape, and then slowly cooled from a temperature approximately 20°C higher than the annealing point to room temperature at 3°C/min. For each sample obtained, the average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C. (α _{20 to 200} ), the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. (α _{30 to 380} ), density ( ρ), strain point (Ps), annealing point (Ta), softening point (Ts ⁾ , high temperature viscosity 10 ^{4.0 temperature} at dPa s, high temperature viscosity 10 ^3.0 temperature at dPa s, high temperature viscosity Temperature at 10 ^{2.5 dPa} s, high-temperature viscosity 10 ^2.0 Temperature at ⁰ dPa s, liquidus temperature (TL), viscosity (η) at liquidus temperature (TL), and Young's modulus (E) Evaluated.

The average linear thermal expansion coefficient (α _{20 to 200} ) in the temperature range of 20 to 200 ° C. and the average linear thermal expansion coefficient (α _{30 to 380} ) in the temperature range of 30 to 380 ° C. are values measured with a dilatometer. .

Density (ρ) is a value measured by the well-known Archimedes method.

Strain point (Ps), annealing point (Ta), and softening point (Ts) are values measured according to the method of ASTM C 336.

The temperatures at the high-temperature viscosities of 10 ^4.0 dPa·s, 10 ^3.0 dPa·s, ^and 10 ^2.5 dPa·s are values measured by the platinum ball pulling method.

The liquidus temperature (TL) is measured by microscopic observation of the temperature at which crystals are precipitated after passing through a standard sieve of 30 mesh (500 μm) and placing the glass powder remaining on the 50 mesh (300 μm) into a platinum boat and holding it for 24 hours in a temperature gradient furnace. is a value measured by The viscosity (η) at the liquidus temperature is a value obtained by measuring the viscosity of the glass at the liquidus temperature (TL) by a platinum ball pulling method.

Young's modulus (E) refers to a value measured by the resonance method.

As is clear from Tables 1 to 5, sample No. 1 to 75 is the average coefficient of linear thermal expansion (α _{20 to 200} ) in the temperature range of 20 to 200 ° C. is 110 × 10 ^-7 / ° C to 145 × 10 ^-7 / ° C, in the temperature range of 30 to 380 ° C. The average coefficient of linear thermal expansion (α _{30 to 380} ) was 116×10 ^-7 /°C to 157×10 ^-7 /°C. Therefore, sample No. It is thought that 1-75 is suitable as a support glass substrate used for support of a processing board in the manufacturing process of a semiconductor manufacturing apparatus.

Example 2

Each sample of [Example 2] was produced as follows. First, the sample No. described in the table. After combining glass raw materials so as to have a glass composition of 1 to 75, they are supplied to a glass melting furnace and melted at 1450 to 1550 ° C. Then, the molten glass is supplied to an overflow down draw forming machine and each is molded to a plate thickness of 0.7 mm. did. After processing the obtained glass substrate (total sheet thickness variation of about 4.0 μm) to a thickness of φ300 mm × 0.7 mm, both surfaces thereof were polished with a polishing machine. Specifically, both surfaces of the glass substrate were sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass substrate were polished while rotating the glass substrate and the pair of polishing pads together. During the polishing process, it was controlled so that a part of the glass substrate was pushed out of the polishing pad from time to time. The polishing pad was made of urethane, and the polishing slurry used in the polishing treatment had an average particle diameter of 2.5 µm and a polishing speed of 15 m/min. For each polished glass substrate obtained, the total sheet thickness variation and the amount of warping were measured by SBW-331ML/d manufactured by Kobelco Research Institute, Inc. As a result, the total plate thickness deviation was less than 1.0 μm, respectively, and the amount of warping was each less than 35 μm.

(industrial availability)

The supporting glass substrate of the present invention is preferably used for supporting a processing substrate in a semiconductor package manufacturing process, but is applicable other than this purpose. For example, taking advantage of high expansion, it can be applied as a substitute for a high-expansion metal substrate such as an aluminum alloy substrate, and can also be applied as a substitute for a high-expansion ceramic substrate such as a zirconia substrate and a ferrite substrate.

1, 27: laminated body 10, 26: support glass substrate
11, 24: processed substrate 12: release layer
13, 21, 25: adhesive layer 20: support member
22: semiconductor chip 23: sealing material
28 wiring 29 solder bump

Claims (17)

A laminate comprising at least a processing substrate and a supporting glass substrate for supporting the processing substrate,
The supporting glass substrate has an average coefficient of linear thermal expansion in the temperature range of 20 to 200°C greater than 110 × 10 ^-7 /°C and less than or equal to 160 × 10 ^-7 /°C, and is used for supporting a processed substrate in a semiconductor package manufacturing process. A supporting glass substrate used,
A laminate characterized in that the processing substrate includes at least a semiconductor chip molded with a sealing material. A laminate comprising at least a processing substrate and a supporting glass substrate for supporting the processing substrate,
The supporting glass substrate has an average coefficient of linear thermal expansion in the temperature range of 30 to 380°C greater than 115 × 10 ^-7 /°C and less than or equal to 165 × 10 ^-7 /°C, and is used for supporting a processed substrate in a semiconductor package manufacturing process. A supporting glass substrate used,
A laminate characterized in that the processing substrate includes at least a semiconductor chip molded with a sealing material. A step of preparing a laminate comprising at least a processing substrate and a supporting glass substrate for supporting the processing substrate;
In addition to having a step of processing the processed substrate, the average linear thermal expansion coefficient of the supporting glass substrate in the temperature range of 20 to 200 ° C. is greater than 110 × 10 ^-7 / ° C. and is 160 × 10 ^-7 / ° C. The manufacturing method of a semiconductor package characterized by the following, which is a supporting glass substrate used for supporting a processing substrate in a manufacturing process of a semiconductor package. A step of preparing a laminate comprising at least a processing substrate and a supporting glass substrate for supporting the processing substrate;
In addition to having a step of processing the processed substrate, the supporting glass substrate has an average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. greater than 115 × 10 ^-7 / ° C. and 165 × 10 ^-7 / ° C. The manufacturing method of a semiconductor package characterized by the following, which is a supporting glass substrate used for supporting a processing substrate in a manufacturing process of a semiconductor package. According to claim 3 or 4,
A method of manufacturing a semiconductor package, characterized in that the processing treatment includes a step of wiring a surface of one of the processed substrates. According to claim 3 or 4,
A method for manufacturing a semiconductor package, characterized in that the processing treatment includes a step of forming solder bumps on one surface of a processing substrate. A semiconductor package produced by the method for manufacturing a semiconductor package according to claim 3 or 4. As an electronic device having a semiconductor package,
An electronic device characterized in that the semiconductor package is the semiconductor package according to claim 7. delete delete delete delete delete delete delete delete delete

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