CN107074618A - Support glass substrate and use its layered product - Google Patents
Support glass substrate and use its layered product Download PDFInfo
- Publication number
- CN107074618A CN107074618A CN201580057730.8A CN201580057730A CN107074618A CN 107074618 A CN107074618 A CN 107074618A CN 201580057730 A CN201580057730 A CN 201580057730A CN 107074618 A CN107074618 A CN 107074618A
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- China
- Prior art keywords
- glass substrate
- support glass
- substrate
- substrate processing
- semiconductor package
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- 239000000758 substrate Substances 0.000 title claims abstract description 234
- 239000011521 glass Substances 0.000 title claims abstract description 176
- 238000012545 processing Methods 0.000 claims abstract description 91
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims description 73
- 238000004519 manufacturing process Methods 0.000 claims description 41
- 239000000203 mixture Substances 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 35
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims description 24
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 16
- 229910052593 corundum Inorganic materials 0.000 claims description 16
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 16
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 239000003566 sealing material Substances 0.000 claims description 6
- 230000008859 change Effects 0.000 abstract description 15
- 238000009434 installation Methods 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 description 20
- 230000001070 adhesive effect Effects 0.000 description 20
- 239000000463 material Substances 0.000 description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 16
- 238000004031 devitrification Methods 0.000 description 13
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- 238000000227 grinding Methods 0.000 description 9
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 239000002390 adhesive tape Substances 0.000 description 6
- GOLCXWYRSKYTSP-UHFFFAOYSA-N arsenic trioxide Inorganic materials O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 5
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000005352 clarification Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000006025 fining agent Substances 0.000 description 2
- 239000006066 glass batch Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000009774 resonance method Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- 239000004821 Contact adhesive Substances 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 241000219000 Populus Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000002798 spectrophotometry method Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Glass Compositions (AREA)
Abstract
The technical task of the present invention contributes to the high-density installation of semiconductor package body by starting the supporting substrates for the change in size for being difficult to produce substrate processing and using its layered product.The present invention provides a kind of support glass substrate, it is characterised in that the average thermal linear expansion coefficient in 20~200 DEG C of temperature range is more than 110 × 10- 7/ DEG C and for 160 × 10- 7/ DEG C below.
Description
Technical field
The present invention relates to support glass substrate and using its layered product, in particular in semiconductor package body
It is used to support the support glass substrate of substrate processing in manufacturing process and uses its layered product.
Background technology
Set for pocket electronics such as portable phone, notebook computer, PDA (Personal Data Assistance)
It is standby, it is desirable to miniaturization and lightweight.Accompany with this, the installing space of the semiconductor chip used in these electronic equipments also by
To strict limitation, the high-density installation of semiconductor chip turns into problem.Therefore, in recent years, three-dimensional mounting technique, Ji Jiangban are passed through
Conductor chip is stacked on one another, carrying out wiring connection each semiconductor chip, to seek the high-density installation of semiconductor package body.
In addition, existing wafer level packages body (WLP) makes as follows：After the state formation projection of chip, lead to
Cross and cut into slices and singualtion.But, there are the following problems by existing WLP：Not only number of pins is difficult to increase, and due to semiconductor
The state that the back side of chip is exposed is installed, therefore easily produces breach of semiconductor chip etc..
Therefore, as new WLP, it is proposed that the WLP of fan-out types.The WLP of fan-out types can increase number of pins
Plus, and by protecting the end of semiconductor chip, breach so as to prevent semiconductor chip etc..
The content of the invention
The invention problem to be solved
In the WLP of fan-out types, multiple semiconductor chips are sealed with resin-sealing material and processing base is formed
After plate, with the process connected up on a surface of substrate processing, the process for forming solder projection etc..
These processes have encapsulant to deform and make substrate processing due to the heat treatment with about 200 DEG C
The worry of change in size.If change in size occurs for substrate processing, it is difficult to carry out high density cloth to a surface of substrate processing
Line, it is also difficult to properly form solder projection.
The use of the supporting substrates for supporting substrate processing is effective to suppress the change in size of substrate processing.But
It is, even if in the case of using supporting substrates, the change in size of substrate processing can also occur sometimes.
The invention that the present invention is in view of the foregoing and completed, its technical task is to be not susceptible to processing by inventing
The supporting substrates of the change in size of substrate and contribute to the high-density installation of semiconductor package body using its layered product.
Means for solving the problems
Various experiments have been repeated in the present inventor etc., as a result find：By selecting glass substrate to be used as supporting substrates simultaneously
The thermal coefficient of expansion of the strict regulations glass substrate, so as to solve above-mentioned technical task.Thus propose the present invention.That is,
The support glass substrate of the present invention, it is characterised in that the average thermal linear expansion coefficient in 20~200 DEG C of temperature range surpasses
Cross 110 × 10- 7/ DEG C and for 160 × 10- 7/ DEG C below.Here, " in the average linear thermal expansion of 20~200 DEG C of temperature ranges
Coefficient " is measured using thermal dilatometer.
Glass substrate is easily smoothed to surface and with rigidity.Therefore, if being used as supporting base using glass substrate
Plate, then can firmly and correctly support substrate processing.In addition, glass substrate readily penetrates through the light such as ultraviolet light, infrared light.Cause
This, is if using glass substrate as supporting substrates, adhesive linkage etc. can be set using ultraviolet hardening bonding agent etc., so that
Easily substrate processing and support glass substrate are fixed.In addition, absorbing ultrared peel ply etc. by setting, it can also hold
Change places substrate processing and support glass substrate separation.It is used as another way, it is possible to use ultraviolet hardening adhesive tape etc. is set
Adhesive linkage etc., so as to easily separate substrate processing and support glass substrate.
In addition, for the support glass substrate of the present invention, the average linear heat within the temperature range of 20~200 DEG C
The coefficient of expansion is defined as more than 110 × 10- 7/ DEG C more than and 160 × 10- 7/ DEG C below.Thus, when semiconductor chip is in processing
Ratio in substrate is few, encapsulant ratio it is many in the case of, the thermal coefficient of expansion of substrate processing and support glass substrate holds
Easily matching.If moreover, both matched coefficients of thermal expansion, the change in size for easily suppressing substrate processing during working process is (special
It is not buckling deformation).Result is that high-density wiring can be carried out to a surface of substrate processing, and can also correct landform
Into solder projection.
Second, support glass substrate of the invention, it is characterised in that its being averaged in 30~380 DEG C of temperature range
Thermal linear expansion coefficient is more than 115 × 10- 7/ DEG C and for 165 × 10- 7/ DEG C below.Here, " in 30~380 DEG C of temperature range
Average thermal linear expansion coefficient " can be determined using dilatometer.
3rd, support glass substrate of the invention is used to support processing base preferably in the manufacturing process of semiconductor package body
Plate.
4th, support glass substrate of the invention preferably inside glass have composition surface, i.e. using overflow downdraw into
Shape is formed.
5th, the Young's modulus of support glass substrate of the invention is preferably more than 65GPa.Here, " Young's modulus " is
Refer to the value determined by flexural resonance method.It is explained, 1Gpa is equivalent to about 101.9Kgf/mm2。
6th, support glass substrate of the invention preferably contains SiO in terms of quality %250~70%, Al2O31~
20%th, B2O30~15%, MgO 0~10%, CaO 0~10%, SrO 0~7%, BaO 0~7%, ZnO 0~7%,
Na2O 10~30%, K2O 2~25% is constituted as glass.
7th, support glass substrate of the invention preferably contains SiO in terms of quality %253~65%, Al2O33~
13%th, B2O30~10%, MgO 0~6%, CaO 0~10%, SrO 0~5%, BaO 0~5%, ZnO 0~5%, Na2O
+K2O 20~40%, Na2O 12~21%, K2O 5~21% is constituted as preferred glass.Here, " Na2O+K2O " is Na2O with
K2O total amount.
8th, the preferred thickness of slab of support glass substrate of the invention is less than 30 μm and amount of warpage less than 2.0mm, thickness deviation
For less than 60 μm.Here, " amount of warpage " refers between the highest site in support glass substrate entirety and least square focus face
Ultimate range absolute value and minimum site and the absolute value sum of least square focus face, can be for example, by refreshing steel
(Kobelco) SBW-331ML/d of scientific research company system is determined.
9th, layered product of the invention, it is characterised in that it is that at least possess substrate processing and for supporting substrate processing
Support glass substrate layered product, wherein, support glass substrate be above-mentioned support glass substrate.
Tenth, layered product of the invention preferably makes substrate processing at least possess the semiconductor core being sealed to form by sealing material
Piece.
11st, the manufacture method of semiconductor package body of the invention, it is characterised in that including preparing at least possess processing
Substrate and for the support glass substrate that supports substrate processing layered product process and substrate processing is processed
Process, and support glass substrate is above-mentioned support glass substrate.
12nd, the manufacture method of semiconductor package body of the invention preferably makes working process be included in the one of substrate processing
The process connected up on individual surface.
13rd, the manufacture method of semiconductor package body of the invention preferably makes working process be included in the one of substrate processing
The process that solder projection is formed on individual surface.
14th, the manufacture method of semiconductor package body of the invention, it is characterised in that it utilizes above-mentioned semiconductor package
The manufacture method of body is filled to make.
15th, electronic equipment of the invention, it is characterised in that it is the electronic equipment for possessing semiconductor package body, its
In, semiconductor packages is above-mentioned semiconductor packages.
16th, glass substrate of the invention, it is characterised in that contain SiO in terms of quality %250~70%, Al2O3 1
~20%, B2O30~15%, MgO 0~10%, CaO 0~10%, SrO 0~7%, BaO 0~7%, ZnO 0~7%,
Na2O 10~30%, K2O 2~25% is constituted as glass, the glass substrate being averaged in 20~200 DEG C of temperature range
Thermal linear expansion coefficient is more than 110 × 10- 7/ DEG C and for 160 × 10- 7/ DEG C below.
17th, glass substrate of the invention, it is characterised in that contain SiO in terms of quality %250~70%, Al2O3 1
~20%, B2O30~15%, MgO 0~10%, CaO 0~10%, SrO 0~7%, BaO 0~7%, ZnO 0~7%,
Na2O 10~30%, K2O 2~25% is constituted as glass, the glass substrate being averaged in 30~380 DEG C of temperature range
Thermal linear expansion coefficient is more than 115 × 10- 7/ DEG C and for 165 × 10- 7/ DEG C below.
Brief description of the drawings
Fig. 1 is the schematic perspective view of one for representing the layered product of the present invention.
Fig. 2 is the schematic cross sectional views of the manufacturing process for the WLP for representing fan out types.
Embodiment
Average thermal linear expansion coefficient of the support glass substrate of the present invention in 20~200 DEG C of temperature range exceedes
110×10- 7/ DEG C and for 160 × 10- 7/ DEG C below, preferably 115 × 10- 7/ DEG C more than and 155 × 10- 7/ DEG C below, especially
Preferably 120 × 10- 7/ DEG C more than and 150 × 10- 7/ DEG C below.If the average linear heat in 20~200 DEG C of temperature range
The coefficient of expansion is that then substrate processing is difficult to match with the thermal coefficient of expansion of support glass substrate outside above range.Both if moreover,
Thermal coefficient of expansion mismatch, then in working process easily occur substrate processing change in size (especially buckling deformation).
Average thermal linear expansion coefficient in 30~380 DEG C of temperature range is more than 115 × 10- 7/ DEG C and for 165 ×
10- 7/ DEG C below, preferably 120 × 10- 7/ DEG C more than and 160 × 10- 7/ DEG C below, particularly preferably 125 × 10- 7/ DEG C with
It is upper and 155 × 10- 7/ DEG C below.If 30~380 DEG C of temperature ranges average thermal linear expansion coefficient for outside above range,
Then substrate processing is difficult to match with the thermal coefficient of expansion of support glass substrate.If moreover, both thermal coefficient of expansion mismatch,
The change in size (especially buckling deformation) of substrate processing easily occurs in working process.
The support glass substrate of the present invention preferably contains SiO in terms of quality %250~70%, Al2O31~20%, B2O3
0~15%, MgO 0~10%, CaO 0~10%, SrO 0~7%, BaO 0~7%, ZnO 0~7%, Na2O 10~
30%th, K2O 2~25% is constituted as glass.The reasons why limiting the content of each composition as described above is as shown below.Give
Illustrate, in the explanation of the content of each composition, % statement represents quality % in addition to the situation for having special instruction.
SiO2For the principal component for the skeleton for forming glass.SiO2Content be preferably 50~70%, 53~67%, 55~
65%th, 56~63%, especially 57~62%.If SiO2Content it is very few, then Young's modulus, acid resistance are easily reduced.It is another
Aspect, if SiO2Content it is excessive, then high temperature viscosity is uprised, and meltbility is easily reduced, and the devitrification crystallization such as christobalite is easy
Separate out and liquidus temperature is easily increased.
Al2O3To improve the composition of Young's modulus, and it is to suppress split-phase, the composition of devitrification.Al2O3Content be preferably 1
~20%, 2~16%, 2.5~14%, 3~12%, 3.5~10%, especially 4~8%.If Al2O3Content it is very few, then poplar
Family name's modulus is easily reduced, and the easy split-phase of glass, devitrification.On the other hand, if Al2O3Content it is excessive, then high temperature viscosity becomes
Height, meltbility, formability are easily reduced.
B2O3It is to improve meltbility, the composition of devitrification resistance, and is the composition for improving easy scratch resistant and improving intensity.
B2O3Content be preferably 0~15%, 0~10%, 0~8%, 0~5%, 0~3%, especially 0~1%.If B2O3Content
Excessively, then Young's modulus, acid resistance are easily reduced.
From the viewpoint of Young's modulus is improved, Al2O3- B2O3Preferably greater than 0%, more than 1%, more than 3%, 5% with
Above, especially more than 7%.It is explained, " Al2O3- B2O3" refer to from Al2O3Content subtract B2O3Content after value.
MgO is the composition for reducing high temperature viscometrics and improving meltbility, and is significantly improved in alkaline earth oxide
The composition of Young's modulus.MgO content is preferably 0~10%, 0~8%, 0~7%, 0.1~6%, 0.5~5%, especially 1
~4%.If MgO content is excessive, devitrification resistance is easily reduced.
CaO is the composition for reducing high temperature viscometrics and significantly improving meltbility.In addition, in alkaline earth oxide, due to
Import the less expensive composition so as to be reduction batch of material cost of raw material.CaO content preferably 0~10%, 0.5~6%, 1~
5%th, especially 2~4%.If CaO content is excessive, the easy devitrification of glass.It is explained, it is difficult if CaO content is very few
To enjoy the effect above.
SrO is the composition for suppressing split-phase, and is the composition for improving devitrification resistance.SrO content is preferably 0~7%, 0
~5%, 0~3%, especially more than 0 and less than 1%.If SrO content is excessive, batch of material cost easily rises.
BaO is the composition for improving devitrification resistance.BaO content is preferably 0~7%, 0~5%, 0~3%, more than 0 and not
Foot 1%.If BaO content is excessive, batch of material cost easily rises.
Mass ratio CaO/ (MgO+CaO+SrO+BaO) is preferably more than 0.5, more than 0.6, more than 0.7, more than 0.8, especially
Preferably more than 0.9.If mass ratio CaO/ (MgO+CaO+SrO+BaO) is too small, cost of material is easily surging.It is explained,
" CaO/ (MgO+CaO+SrO+BaO) " refers to CaO content divided by the value obtained by MgO, CaO, SrO and BaO total amount.
ZnO is the composition for reducing high temperature viscometrics and significantly improving meltbility.ZnO content is preferably 0~7%, 0~5%,
0~3%, more than 0.1 and less than 1%.If ZnO content is very few, it is difficult to enjoy the effect above.It is explained, if ZnO's contains
Amount is excessive, then the easy devitrification of glass.
Na2O and K2O is exceeded for the average thermal linear expansion coefficient in 20~200 DEG C of temperature range to be limited in
110×10- 7/ DEG C and for 160 × 10- 7/ DEG C below important component, and be improve high temperature viscometrics and significantly improve meltbility,
And the composition for contributing to melt the initial stage of frit.Na2O+K2O content is preferably 20~40%, 23~38%, 25~
36%th, 26~34%, especially 27~33%.If Na2O+K2O content is very few, then meltbility is easily reduced, and there is heat
The risk of the coefficient of expansion inadequately step-down.On the other hand, if Na2O+K2O content is excessive, then there is thermal coefficient of expansion uncomfortable
The risk that locality is improved.
Na2O is for the average thermal linear expansion coefficient in 20~200 DEG C of temperature range to be limited in more than 110
×10- 7/ DEG C and for 160 × 10- 7/ DEG C below important component, and be improve high temperature viscometrics and significantly improve meltbility and
Contribute to the composition that the initial stage of frit melts.Na2O content is preferably 10~30%, 12~25%, 13~22%, 14
~21%, especially 15~20%.If Na2O content is very few, then meltbility is easily reduced, and there is thermal coefficient of expansion not
The suitably risk of step-down.On the other hand, if Na2O content is excessive, then there is the wind that thermal coefficient of expansion is inadequately uprised
Danger.
K2O be for the average thermal linear expansion coefficient in 20~200 DEG C of temperature range to be limited in more than 110~
160×10- 7/ DEG C important component, and be reduction high temperature viscometrics and significantly improve meltbility and contribute to frit
The composition of melting at initial stage.K2O content is preferably 2~25%, 5~25%, 7~22%, 8~20%, 9~19%, especially
10~18%.If K2O content is very few, then meltbility is easily reduced, and there is the wind of thermal coefficient of expansion inadequately step-down
Danger.On the other hand, if K2O content is excessive, then there is the risk that thermal coefficient of expansion is inadequately uprised.
From the average thermal linear expansion coefficient in 20~200 DEG C of temperature range is limited in more than 110~160 ×
10- 7/ DEG C from the viewpoint of, mass ratio Al2O3/(Na2O+K2O it is preferably) 0.05~0.7,0.08~0.6,0.1~0.5,0.12
~0.4, especially 0.14~0.3.It is explained, " Al2O3/(Na2O+K2O Al) " is referred to2O3Content divided by Na2O and K2O's
Value obtained by total amount.
In addition to mentioned component, other compositions are may be incorporated into as any condition.It is explained, from enjoying this hair really
From the viewpoint of obvious results fruit, the contents of the other compositions beyond mentioned component is preferably less than 10% in terms of total amount, particularly preferably
For less than 5%.
Fe2O3It is the composition that can be introduced as impurity component or fining agent composition.But, if Fe2O3Content it is excessive,
Then there is the risk that ultraviolet sets rate reduction thoroughly.That is, if Fe2O3Content it is excessive, then it is appropriate by adhesive linkage, peel ply to be difficult to
Ground is processed the bonding and disengaging of substrate and support glass substrate.Therefore, Fe2O3Content be preferably less than 0.05%,
Less than 0.03%, especially less than 0.02%.It is explained, described " Fe in the present invention2O3" include the iron oxide and trivalent of divalent
Iron oxide, the iron oxide of divalent is scaled Fe2O3To handle.Other oxides are located similarly on the basis of the oxide of record
Reason.
It is used as fining agent, As2O3Can effectively play a role, for the viewpoint of environment, preferably reduce as much as possible this into
Point.As2O3Content be preferably less than 1%, less than 0.5%, especially less than 0.1%, it is generally desirable to contain substantially no.
This, " contains substantially no As2O3" refer to glass composition in As2O3Situation of the content less than 0.05%.
Sb2O3It is the composition in low-temperature region with good clarification.Sb2O3Content be preferably 0~1%, 0.01
~0.7%, especially 0.05~0.5%.If Sb2O3Content it is excessive, then glass is easily coloured.It is explained, if Sb2O3's
Content is very few, then is difficult to enjoy the effect above.
SnO2It is the composition in high-temperature area with good clarification, and is to reduce the composition of high temperature viscometrics.SnO2
Content be preferably 0~1%, 0.001~1%, 0.01~0.9%, especially 0.05~0.7%.If SnO2Content it is excessive,
Then SnO2Devitrification crystallization easy separate out.It is explained, if SnO2Content it is very few, then be difficult to enjoy the effect above.
And then, less than 3% Zuo You introducing F, Cl, SO can be respectively in the limit for not damaging glass performance3, C or
The metal dusts such as person Al, Si.Alternatively, it is also possible to introduce CeO with less than 3% Zuo You2Deng, but need to pay attention to ultraviolet transmittance
Reduction.
Cl is the composition for promoting glass melting.If introducing Cl in glass composition, the low temperature of melting temperature can be sought
Change, the promotion of clarification, as a result easily realize cheaper, glass manufacture kiln the long lifetime of melting cost.But, if Cl
Content it is excessive, then there is the risk of the metal parts around etching glass manufacture kiln.Therefore, Cl content be preferably 3% with
Under, less than 1%, less than 0.5%, especially less than 0.1%.
P2O5It is the composition for the precipitation that can suppress devitrification crystallization.But, if introducing a large amount of P2O5, then the easy split-phase of glass.Cause
This, P2O5Content be preferably 0~2.5%, 0~1.5%, 0~0.5%, especially 0~0.3%.
TiO2It is the composition for reducing high temperature viscometrics and improving meltbility, and is to suppress solarization (solarization)
Composition.But, if introducing a large amount of TiO2, then glass coloration, transmissivity is easily reduced.Therefore, TiO2Content be preferably 0~
5%th, 0~3%, 0~1%, especially 0~0.02%.
ZrO2It is to improve chemical-resistant, the composition of Young's modulus.But, if introducing a large amount of ZrO2, then glass easily lose
Thoroughly, and due to introducing raw material it is slightly solubility, therefore there is the risk that unfused crystallinity foreign matter is mixed into product substrate.Cause
This, ZrO2Content be preferably 0~5%, 0~3%, 0~1%, especially 0~0.5%.
Y2O3、Nb2O5、La2O3It is improved the effect of strain point, Young's modulus etc..But, if the content difference of these compositions
More than 5%, particularly 1%, then there is the surging risk of batch of material cost, goods cost.
The support glass substrate of the present invention preferably has following characteristic.
Liquidus temperature be preferably less than 1150 DEG C, less than 1120 DEG C, less than 1100 DEG C, less than 1080 DEG C, less than 1050 DEG C,
Less than 1010 DEG C, less than 980 DEG C, less than 960 DEG C, less than 940 DEG C, less than 920 DEG C, below less than 900 DEG C, especially 880 DEG C.
So, easily draw method, especially overflow downdraw under come molding glass substrate, therefore easily make the small glass of thickness of slab
Glass substrate, even and if surface is not ground or leads to too small amount of grinding, thickness deviation just can be reduced, as a result can be with
Make the manufacturing cost of glass substrate cheaper.And then, easily prevented in the manufacturing process of glass substrate because producing devitrification crystallization
And the situation for reducing the productivity ratio of glass substrate.Here, " liquidus temperature " can be calculated as follows：30 mesh (500 μ can be passed through
M) standard screen and the glass powders of (300 μm) sieves of 50 mesh are remained in it is put into after platinum boat, keeps 24 small in temperature gradient furnace
When, the temperature for separating out crystallization is determined, so as to calculate.
Viscosity under liquidus temperature is preferably 104.3More than dPas, 104.6More than dPas, 105.0More than dPas,
105.2More than dPas, especially 105.3More than dPas.So, method, especially overflow downdraw are drawn under easily utilizing
Molding glass substrate, therefore easily make the small glass substrate of thickness of slab, even and if not being ground to surface or by few
The grinding of amount, just can improve thickness deviation, as a result the manufacturing cost of glass substrate can be made cheaper.And then, in glass substrate
Manufacturing process when easily prevent because produce devitrification crystallization reduce the productivity ratio of glass substrate situation.Here, " in liquid phase
At a temperature of viscosity " can using platinum ball czochralski method determine.It is explained, the viscosity under liquidus temperature is the finger of formability
Mark, the viscosity under liquidus temperature is higher, then formability is more improved.
102.5Temperature during dPas is preferably less than 1480 DEG C, less than 1400 DEG C, less than 1350 DEG C, 1300 DEG C with
Under, especially less than 1100~1250 DEG C.If 102.5Temperature during dPas uprises, then meltbility reduction and glass substrate
Manufacturing cost is surging.Here, " 102.5Temperature during dPas " is determined using platinum ball czochralski method.It is explained,
102.5Temperature during dPas is equivalent to melting temperature, and the temperature is lower, then meltbility is more improved.
The present invention support glass substrate in, Young's modulus be preferably more than 65GPa, more than 67GPa, more than 68GPa,
More than 69GPa, especially more than 70GPa.If Young's modulus is too low, it is difficult to the rigidity for maintaining layered product, easily processes
Deformation, warpage, the breakage of substrate.
The support glass substrate of the present invention draws method, especially overflow downdraw shaping under and formed.Overflow down draw
Method is to overflow melten glass from the both sides of the groove-like structure thing of heat resistance, makes the melting of spilling on the lower top of groove-like structure thing
Glass collaborates, while stretch forming downwards is come the method that manufactures glass substrate.In overflow downdraw, glass substrate should be turned into
The face on surface does not contact channel-shaped refractory body, is shaped with the state of Free Surface.Therefore, the small glass substrate of thickness of slab is easily made,
Even and if surface is not ground, it can also reduce thickness deviation.Or lead to too small amount of grinding, just can be inclined by overall thickness of slab
Difference is reduced to less than 2.0 μm, especially less than 1.0 μm.As a result the manufacturing cost of glass substrate can be made cheaper.Said
It is bright, as long as the structure or material of groove-like structure thing can realize required size, surface accuracy, then it is not particularly limited.In addition,
When carrying out stretch forming downwards, the method to applying power is also not particularly limited.Can for example use makes to have enough
The heat resistance roller of big width is in the method with rotating, stretching in the state of glass contact, it would however also be possible to employ make multiple paired
Heat resistance roller only contacts the method that the end face of glass is nearby stretched.
As the manufacturing process of glass substrate, in addition to overflow downdraw, it can also use and draw method, again under such as discharge orifice
Draw method, float glass process etc. under new.
The glass substrate of the present invention is preferably substantially discoideus or wafer-like, preferred more than the 100mm of its diameter and 500mm with
Under, particularly preferred more than 150mm and below 450mm.So, it is readily applied to the manufacturing process of semiconductor package body.Also
Shape, the shape such as rectangle in addition can be processed into as needed.
Preferred below the 1mm of out of roundness of support glass substrate of the present invention, below 0.1mm, below 0.05mm, especially
Below 0.03mm.Out of roundness is smaller, then is more readily applied to the manufacturing process of semiconductor package body.It is explained, out of roundness
It is defined as the value as obtained by the maximum of wafer profile subtracts minimum value.
The present invention support glass substrate in, thickness of slab preferably less than 2.0mm, below 1.5mm, below 1.2mm, 1.1mm with
Under, below 1.0mm, especially below 0.9mm.Thickness of slab is thinner, then the quality of layered product is lighter, therefore treatability is more improved.Separately
On the one hand, if thickness of slab is excessively thin, support glass substrate intensity decreases in itself and be difficult to play the function as supporting substrates.Cause
This, thickness of slab is preferably more than 0.1mm, more than 0.2mm, more than 0.3mm, more than 0.4mm, more than 0.5mm, more than 0.6mm, especially
It is more than 0.7mm.
The thickness deviation of the support glass substrate of the present invention is preferably less than 30 μm, less than 20 μm, less than 10 μm, 5 μm with
Under, less than 4 μm, less than 3 μm, less than 2 μm, less than 1 μm, especially 0.1~less than 1 μm.In addition, arithmetic average roughness Ra is excellent
Elect below 100nm, below 50nm, below 20nm, below 10nm, below 5nm, below 2nm, especially below 1nm, 0.5nm as
Below.Surface accuracy is higher, then the precision of working process is easier improves.Wiring precision can be especially improved, therefore, it is possible to enter
The highdensity wiring of row.In addition, the intensity of support glass substrate improves and makes support glass substrate and layered product not cracky.Enter
And, by increasing capacitance it is possible to increase the recycling number of times of support glass substrate.It is explained, " arithmetic average roughness Ra " is using contact pin type table
Surface roughness meter or AFM (AFM) are determined.
The support glass substrate of the present invention is preferably ground after being shaped by overflow downdraw to surface.Such one
Come, easily by thickness deviation be limited to less than 2 μm, less than 1 μm, especially less than 1 μm.
The amount of warpage of the support glass substrate of the present invention is preferably less than 60 μm, less than 55 μm, less than 50 μm, 1~45 μm,
Especially 5~40 μm.Amount of warpage is smaller, then the easier precision for improving working process.Wiring precision can be especially improved, therefore
Highdensity wiring can be carried out.
Ultraviolet transmittance of the support glass substrate under thickness of slab direction, wavelength 300nm of the present invention be preferably 40% with
It is upper, more than 50%, more than 60%, more than 70%, especially more than 80%.If ultraviolet transmittance is too low, because of ultraviolet light
Irradiate and be difficult by adhesive linkage bond processing substrate and supporting substrates.In addition, being set using ultraviolet hardening adhesive tape etc.
In the case of adhesive linkage etc., substrate processing is easily set to be difficult to separate with support glass substrate.
It is explained, " ultraviolet transmittance under thickness of slab direction, wavelength 300nm " for example can be by using dual-beam
Type spectrophotometric determination wavelength 300nm spectral transmission is evaluated.
From the viewpoint of reduction amount of warpage, support glass substrate of the invention preferably without chemical intensification treatment, from
From the viewpoint of mechanical strength, chemical intensification treatment is preferably carried out.That is, from the viewpoint of reduction amount of warpage, preferably on surface
Without compressive stress layers, from the viewpoint of mechanical strength, preferably there are compressive stress layers on surface.
The layered product of the present invention, it is characterised in that it is that at least possess substrate processing and the branch for supporting substrate processing
The layered product of glass substrate is held, wherein, support glass substrate is above-mentioned support glass substrate.Here, the layered product of the present invention
Technical characteristic (preferred scheme, effect) with the present invention support glass substrate technical characteristic repeat.Therefore, in this specification
In detailed record is omitted to the repeating part.
The layered product of the present invention has adhesive linkage preferably between substrate processing and support glass substrate.Adhesive linkage is preferably
Resin, such as preferred heat-curing resin, light-cured resin (particularly ultraviolet curable resin).Additionally, it is preferred that having
The adhesive linkage of the heat resistance of heat treatment in the manufacturing process of tolerable semiconductor package body.Thus, in semiconductor package body
In manufacturing process, adhesive linkage is difficult fusing, can improve the precision of working process.It is explained, in order to easily by substrate processing
Fixed with support glass substrate, ultraviolet hardening adhesive tape can also be used as adhesive linkage.
The layered product of the present invention is preferably between substrate processing and support glass substrate, more specifically in substrate processing and glues
Connecing between layer further has peel ply or further has peel ply between support glass substrate and adhesive linkage.So
One, after working process as defined in being carried out to substrate processing, easily substrate processing is peeled off from support glass substrate.From production
From the viewpoint of rate, the stripping of substrate processing is preferably carried out by irradiation lights such as laser.As LASER Light Source, it can use
The infrared light LASER Light Sources such as YAG laser (wavelength 1064nm), semiconductor laser (780~1300nm of wavelength).In addition, in peel ply
The resin by irradiating infrared laser and decomposing can be used.Furthermore it is also possible in resin addition efficiently absorb it is infrared
Line and the material for being transformed into heat.Carbon black, graphite powder, particle metal powder, dyestuff, face can also be for example added in resin
Material etc..
Peel ply is constituted by producing " being peeled off in layer " or the material of " interface peel " by irradiation lights such as laser.That is, by
Following material is constituted：If irradiating the light of some strength, between the atom in atom or molecule or intermolecular adhesion disappear or
Weaken, ablation (ablation) etc. is produced, so that peeling-off material.It is explained, exist is made by the irradiation of irradiation light
The composition included in peel ply becomes gas and is released situation and peel ply the absorption light down to separation and becomes gas and general
Situation of the steam release down to separation.
In the layered product of the present invention, support glass substrate is preferably greater than substrate processing.Thus, in supporting substrate processing and branch
When holding glass substrate, even both centers are slightly offset from the case of, the edge part of substrate processing is not easy to from branch
Hold glass substrate protrusion.
The present invention semiconductor package body manufacture method, it is characterised in that including prepare at least possess substrate processing and
For the process and the process that is processed to substrate processing of the layered product of the support glass substrate that supports substrate processing, and
And support glass substrate is above-mentioned support glass substrate.Here, the technology of the manufacture method of the semiconductor package body of the present invention
Feature (preferred scheme, effect) is repeated with the support glass substrate of the present invention and the technical characteristic of layered product.Therefore, this specification
In detailed record is omitted to the repeating part.
The manufacture method of the semiconductor package body of the present invention, which has, prepares at least possess substrate processing and for supporting processing
The process of the layered product of the support glass substrate of substrate.At least possess substrate processing and the supporting glass for supporting substrate processing
There is the layered product of substrate above-mentioned material to constitute.
The manufacture method of the semiconductor package body of the present invention preferably further has the process for transporting layered product.Thus, may be used
To improve the treatment effeciency of working process.It is explained, " process for transporting layered product " and " substrate processing is processed
Process " not necessarily carry out respectively, can also carry out simultaneously.
In the manufacture method of the semiconductor package body of the present invention, a surface of working process preferred pair substrate processing is entered
Processing or form the processing of solder projection on a surface of substrate processing that row is connected up.In the semiconductor packages of the present invention
In the manufacture method of body, when these are handled, substrate processing is not susceptible to change in size, therefore, it is possible to correctly carry out these works
Sequence.
As working process, in addition to the foregoing, can also be to a surface of substrate processing (usually positioned at branch
Hold the surface of the opposite side of glass substrate) carry out mechanical lapping processing, to a surface of substrate processing (usually positioned at branch
Hold the surface of the opposite side of glass substrate) carry out dry etch process, to a surface of substrate processing (usually positioned at supporting glass
The surface of the opposite side of glass substrate) carry out any of processing of Wet-type etching.It is explained, semiconductor package body of the invention
Manufacture method in, substrate processing is not susceptible to warpage and is able to maintain that the rigidity of layered product.As a result can correctly it carry out
State working process.
The semiconductor package body of the present invention, it is characterised in that it is by the manufacture method of above-mentioned semiconductor package body
Make.Here, the technical characteristic (preferred scheme, effect) of the semiconductor package body of the present invention and the supporting glass base of the present invention
The technical characteristic of the manufacture method of plate, layered product and semiconductor package body is repeated.Therefore, the repeating part is saved in this specification
Slightly detailed record.
The electronic equipment of the present invention, it is characterised in that it is the electronic equipment for possessing semiconductor package body, wherein, partly lead
Body packaging body is above-mentioned semiconductor package body.Here, the technical characteristic (preferred scheme, effect) of the electronic equipment of the present invention and sheet
Support glass substrate, layered product, the manufacture method of semiconductor package body, the technical characteristic of semiconductor package body of invention are repeated.
Therefore, detailed record is omitted in this specification to the repeating part.
The present invention is further described while referring to the drawings.
Fig. 1 is the schematic perspective view of one for representing the layered product 1 of the present invention.In Fig. 1, layered product 1 possesses supporting glass
Glass substrate 10 and substrate processing 11.In order to prevent the change in size of substrate processing 11, support glass substrate 10 is fitted in into processing
Substrate 11.Peel ply 12 and adhesive linkage 13 are configured between support glass substrate 10 and substrate processing 11.Peel ply 12 and branch
Hold glass substrate 10 to contact, adhesive linkage 13 is contacted with substrate processing 11.
As shown in Figure 1, layered product 1 according to support glass substrate 10, peel ply 12, adhesive linkage 13, substrate processing 11 it is suitable
Sequence laminated configuration.The shape of support glass substrate 10 is determined according to substrate processing 11, in Fig. 1, support glass substrate 10 and add
The shape of work substrate 11 is substantially circular plate shape.Peel ply 12 can use the resin for example by irradiating laser and decomposing.
Furthermore it is also possible to which addition efficiently absorbs laser and is transformed into the material of heat in resin.For example can also be in resin
Add carbon black, graphite powder, particle metal powder, dyestuff, pigment etc..Peel ply 12 is by plasma CVD, based on colloidal sol-solidifying
Spin coating of glue method etc. is formed.Adhesive linkage 13 is made up of resin, for example, pass through various print processes, ink-jet method, spin-coating method, rolling method
Formed etc. being coated.Furthermore it is also possible to use ultraviolet hardening adhesive tape.Peeled off by peel ply 12 from substrate processing 11
After support glass substrate 10, adhesive linkage 13 is removed using the dissolving such as solvent.Ultraviolet hardening adhesive tape can be in irradiation ultraviolet radiation
Removed afterwards using stripping with adhesive tape.
Fig. 2 is the signal type sectional view of the manufacturing process for the WLP for representing fan-out types.Fig. 2 a are represented in supporting member 20
A surface on be formed with the state of adhesive linkage 21.Stripping can be formed between supporting member 20 and adhesive linkage 21 as needed
Absciss layer.Then, as shown in Figure 2 b, multiple semiconductor chips 22 are attached on adhesive linkage 21.Now, having for semiconductor chip 22 is made
Imitate the face contact adhesive linkage 21 of side.Then, as shown in Figure 2 c, semiconductor chip 22 is sealed with the sealing material 23 of resin.
Sealing material 23 uses the few material of the change in size when change in size after compression molding, shaping wiring.Then, such as Fig. 2 d and figure
Shown in 2e, it is sealed with from the separation of supporting member 20 after the substrate processing 24 of semiconductor chip 22, across adhesive linkage 25, with supporting glass
Glass substrate 26 is adhesively fixed.Now, it is opposite with the surface of the side of embedded with semi-conductor chip 22 in the surface of substrate processing 24
The surface configuration of side is in the side of support glass substrate 26.Layered product 27 can so be obtained.It is explained, can be as needed viscous
Connect and form peel ply between layer 25 and support glass substrate 26.And then, after the layered product 27 obtained by transport, such as Fig. 2 f institutes
Show, after forming wiring 28 on the surface of the side of the embedded with semi-conductor chip 22 of substrate processing 24, form multiple soldering projections 29.
Finally, separated by support glass substrate 26 after substrate processing 24, substrate processing 24 is cut into each semiconductor chip 22, for it
Packaging process (Fig. 2 g) afterwards.
【Embodiment 1】
Hereinafter, based on embodiment, the present invention will be described.It is explained, following embodiment is only to illustrate.This hair
It is bright and be not limited in any way the following examples restriction.
Table 1~5 shows embodiments of the invention (sample No.1~75).
[table 1]
[table 2]
[table 3]
[table 4]
[table 5]
First, in the way of the glass composition in as table, the glass batch materials that allotment has frit are put into platinum earthenware
In crucible, melted 4 hours at 1500 DEG C.When glass batch materials melt, stirred, homogenized using platinum agitator.Then, make to melt
Melt glass to flow out on carbon plate, be configured to after tabular, it is slow with 3 DEG C/min since temperature of 20 DEG C or so higher than annealing point
It is cooled to normal temperature.To each sample of gained, the average thermal linear expansion coefficient within the temperature range of 20~200 DEG C is evaluated
α20~200, average thermal linear expansion coefficient α within the temperature range of 30~380 DEG C30~380, density p, strain point Ps, annealing point
Ta, softening point Ts, high temperature viscosity 104.0Temperature, high temperature viscosity 10 during dPas3.0Temperature, high temperature viscosity during dPas
102.5Temperature, high temperature viscosity 10 during dPas2.0Viscosities il when temperature, liquidus temperature TL during dPas, liquidus temperature TL
And Young's modulus E.
Average thermal linear expansion coefficient α within the temperature range of 20~200 DEG C20~200, in 30~380 DEG C of temperature models
Enclose interior average thermal linear expansion coefficient α30~380It is the value using dilatometer measurement.
Density p is the value determined using known Archimedes method.
Strain point Ps, annealing point Ta, softening point Ts are the values that the method based on ASTM C336 is determined.
High temperature viscosity 104.0dPa·s、103.0dPa·s、102.5Temperature during dPas is determined using platinum ball czochralski method
Value.
Liquidus temperature TL be by by the standard screen of 30 mesh (500 μm) and remain in 50 mesh (300 μm) sieve glass dust
End is put into platinum boat, after being kept for 24 hours in temperature gradient furnace, is determined with micro- sem observation obtained by the temperature that crystallization is separated out
Value.Viscosities il during liquidus temperature TL is value obtained by the viscosity of glass when liquidus temperature TL is determined using platinum ball czochralski method.
Young's modulus E refers to the value determined by resonance method.
By table 1~5 clearly, average thermal linear expansion coefficient of sample No.1~75 within the temperature range of 20~200 DEG C
α20~200For 110 × 10- 7/ DEG C~145 × 10- 7/ DEG C, the average thermal linear expansion coefficient within the temperature range of 30~380 DEG C
α30~380For 116 × 10- 7/ DEG C~157 × 10- 7/℃.It is taken as that sample No.1~75 are suitable as filling in semiconductor manufacturing
It is used for the support glass substrate for supporting substrate processing in the manufacturing process put.
【Embodiment 2】
Each sample of [embodiment 2] is made in such a way.First, according to as sample No.1~75 described in table
The mode of glass composition allocate after frit, be supplied to glass melting furnace, then, will be molten in 1450~1550 DEG C of meltings
Melt glass and be supplied to overflow down draw building mortion, be formed respectively in the way of thickness of slab is 0.7mm.By the glass base of gained
Plate (about 4.0 μm of overall thickness deviation) is processed intoAfterwards, using lapping device to its two surface
It is ground processing.Specifically, two surfaces of glass substrate are clamped with a pair of different grinding pads of external diameter, while making glass
Substrate and a pair of grinding pads rotate together, while being ground processing to two surfaces of glass substrate.During milled processed, according to glass
The mode that a part for glass substrate is protruded from grinding pad once in a while is controlled.It is explained, grinding pad is polyurethane, at grinding
The average grain diameter of the ground slurry used during reason is 2.5 μm, grinding rate is 15m/ minutes.After each milled processed of gained
Glass substrate, overall thickness deviation and amount of warpage are determined using the SBW-331ML/d of KOBELCO scientific research company systems.The result is that
Overall thickness deviation is respectively that, less than 1.0 μm, amount of warpage is respectively less than 35 μm.
Industrial applicability
The support glass substrate of the present invention is used to support substrate processing preferably in the manufacturing process of semiconductor package body,
It can apply in the purposes in addition to the purposes.The advantage of highly expanded can for example be applied flexibly and contour swollen as aluminium alloy base plate
The replacement substrate of swollen metal substrate is applied, alternatively, it is also possible to be used as the high expansion ceramics such as oxidation zirconia substrate, ferrite substrate
The replacement substrate of substrate is applied.
Symbol description
1st, 27 layered product,
10th, 26 support glass substrate
11st, 24 substrate processing
12 peel plies
13rd, 21,25 following layer
20 supporting members
22 semiconductor chips
23 sealing material
28 wirings
29 solder projections
Claims (17)
1. a kind of support glass substrate, it is characterised in that its average linear thermal expansion in 20 DEG C~200 DEG C of temperature range
Coefficient is more than 110 × 10- 7/ DEG C and for 160 × 10- 7/ DEG C below.
2. a kind of support glass substrate, it is characterised in that its average linear thermal expansion in 30 DEG C~380 DEG C of temperature range
Coefficient is more than 115 × 10- 7/ DEG C and for 165 × 10- 7/ DEG C below.
3. support glass substrate according to claim 1 or 2, it is characterised in that its manufacture work in semiconductor package body
It is used to support substrate processing in sequence.
4. according to support glass substrate according to any one of claims 1 to 3, it is characterised in that it has in inside glass
Composition surface.
5. according to support glass substrate according to any one of claims 1 to 4, it is characterised in that its Young's modulus is 65GPa
More than.
6. according to support glass substrate according to any one of claims 1 to 5, it is characterised in that contain SiO in terms of quality %2
50%~70%, Al2O31%~20%, B2O30%~15%, MgO 0%~10%, CaO 0%~10%, SrO 0%
~7%, BaO 0%~7%, ZnO 0%~7%, Na2O 10%~30%, K2O 2%~25% is constituted as glass.
7. support glass substrate according to claim 6, it is characterised in that contain SiO in terms of quality %253%~
65%th, Al2O33%~13%, B2O30%~10%, MgO 0%~6%, CaO 0%~10%, SrO 0%~5%,
BaO 0%~5%, ZnO 0%~5%, Na2O+K2O 20%~40%, Na2O 12%~21%, K2O 5%~21% makees
Constituted for glass.
8. according to support glass substrate according to any one of claims 1 to 7, it is characterised in that its thickness of slab less than 2.0mm,
Thickness deviation is less than 30 μm, and amount of warpage is less than 60 μm.
9. a kind of layered product, it is characterised in that it is that at least possess substrate processing and the supporting glass for supporting substrate processing
The layered product of substrate, wherein, support glass substrate is support glass substrate according to any one of claims 1 to 8.
10. layered product according to claim 9, it is characterised in that substrate processing at least possesses to be sealed to form by sealing material
Semiconductor chip.
11. a kind of manufacture method of semiconductor package body, it is characterised in that including
Prepare the process at least possessing substrate processing and the layered product for the support glass substrate that supports substrate processing, and
The process being processed to substrate processing,
And support glass substrate is support glass substrate according to any one of claims 1 to 8.
12. the manufacture method of semiconductor package body according to claim 11, it is characterised in that working process, which is included in, to be added
The process connected up on one surface of work substrate.
13. the manufacture method of the semiconductor package body according to claim 11 or 12, it is characterised in that working process includes
The process that solder projection is formed on a surface of substrate processing.
14. a kind of semiconductor package body, it is characterised in that it utilizes the semiconductor package any one of claim 11~13
The manufacture method of body is filled to make.
15. a kind of electronic equipment, it is characterised in that it is the electronic equipment for possessing semiconductor package body, wherein, semiconductor packages
For the semiconductor package body described in claim 14.
16. a kind of glass substrate, it is characterised in that contain SiO in terms of quality %250%~70%, Al2O31%~20%,
B2O30%~15%, MgO 0%~10%, CaO 0%~10%, SrO 0%~7%, BaO 0%~7%, ZnO 0%~
7%th, Na2O 10%~30%, K2O 2%~25% is constituted as glass,
Average thermal linear expansion coefficient of the glass substrate in 20 DEG C~200 DEG C of temperature range is more than 110 × 10- 7/ DEG C and
For 160 × 10- 7/ DEG C below.
17. a kind of glass substrate, it is characterised in that contain SiO in terms of quality %250%~70%, Al2O31%~20%,
B2O30%~15%, MgO 0%~10%, CaO 0%~10%, SrO 0%~7%, BaO 0%~7%, ZnO 0%~
7%th, Na2O 10%~30%, K2O 2%~25% is constituted as glass,
Average thermal linear expansion coefficient of the glass substrate in 30 DEG C~380 DEG C of temperature range is more than 115 × 10- 7/ DEG C and
For 165 × 10- 7/ DEG C below.
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-253574 | 2014-12-16 | ||
| JP2014253574 | 2014-12-16 | ||
| JP2015-031496 | 2015-02-20 | ||
| JP2015031496 | 2015-02-20 | ||
| JP2015-197313 | 2015-10-05 | ||
| JP2015197313A JP6627388B2 (en) | 2014-12-16 | 2015-10-05 | Supporting glass substrate and laminate using the same |
| PCT/JP2015/081983 WO2016098499A1 (en) | 2014-12-16 | 2015-11-13 | Support glass substrate and laminate using same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107074618A true CN107074618A (en) | 2017-08-18 |
Family
ID=56825123
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580057730.8A Pending CN107074618A (en) | 2014-12-16 | 2015-11-13 | Support glass substrate and use its layered product |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6627388B2 (en) |
| KR (1) | KR102509782B1 (en) |
| CN (1) | CN107074618A (en) |
| TW (1) | TWI673836B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111033687A (en) * | 2017-08-31 | 2020-04-17 | 日本电气硝子株式会社 | Supporting glass substrate and laminated substrate using same |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018095514A (en) * | 2016-12-14 | 2018-06-21 | 日本電気硝子株式会社 | Glass support substrate and laminate using same |
| WO2018110163A1 (en) * | 2016-12-14 | 2018-06-21 | 日本電気硝子株式会社 | Glass support substrate and laminate using same |
| JP7011215B2 (en) * | 2016-12-14 | 2022-02-10 | 日本電気硝子株式会社 | Support glass substrate and laminate using it |
| TWI697077B (en) * | 2017-01-24 | 2020-06-21 | 美商通用電機股份有限公司 | Power electronics package and method of manufacturing thereof |
| WO2020129297A1 (en) * | 2018-12-21 | 2020-06-25 | Ａｇｃ株式会社 | Laminate and method for manufacturing laminate |
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| JP2004067460A (en) * | 2002-08-07 | 2004-03-04 | Central Glass Co Ltd | Glass composition |
| JP2012015216A (en) * | 2010-06-29 | 2012-01-19 | Fujitsu Ltd | Semiconductor device manufacturing method |
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| JP3683123B2 (en) * | 1999-04-30 | 2005-08-17 | セントラル硝子株式会社 | Glass for press molding and substrate glass for information recording medium |
| JP2002025040A (en) * | 2000-06-30 | 2002-01-25 | Hitachi Ltd | Glass substrate for magnetic disk and magnetic disk using the same |
| JP5140014B2 (en) | 2009-02-03 | 2013-02-06 | 富士通株式会社 | Manufacturing method of semiconductor device |
| US9434644B2 (en) * | 2010-09-30 | 2016-09-06 | Avanstrate Inc. | Cover glass and method for producing cover glass |
| JP5896338B2 (en) * | 2011-01-18 | 2016-03-30 | 日本電気硝子株式会社 | Method for producing tempered glass and method for producing tempered glass plate |
| JP2012221591A (en) * | 2011-04-04 | 2012-11-12 | Ohara Inc | Light emitting element and substrate material for light emitting element |
| KR101474399B1 (en) * | 2012-05-15 | 2014-12-22 | 주식회사 엘지화학 | Alkali glass and method for manufacturing the same |
| KR101465170B1 (en) * | 2012-06-21 | 2014-11-25 | 주식회사 엘지화학 | Alkali glass and method for manufacturing the same |
| JP2014024717A (en) * | 2012-07-27 | 2014-02-06 | Asahi Glass Co Ltd | GLASS SUBSTRATE FOR Cu-In-Ga-Se SOLAR CELL, SOLAR CELL USING THE SAME, AND MANUFACTURING METHOD THEREOF |
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2015
- 2015-10-05 JP JP2015197313A patent/JP6627388B2/en active Active
- 2015-11-13 CN CN201580057730.8A patent/CN107074618A/en active Pending
- 2015-11-13 KR KR1020177003666A patent/KR102509782B1/en active IP Right Grant
- 2015-12-01 TW TW104140014A patent/TWI673836B/en active
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| JP2004067460A (en) * | 2002-08-07 | 2004-03-04 | Central Glass Co Ltd | Glass composition |
| JP2012015216A (en) * | 2010-06-29 | 2012-01-19 | Fujitsu Ltd | Semiconductor device manufacturing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111033687A (en) * | 2017-08-31 | 2020-04-17 | 日本电气硝子株式会社 | Supporting glass substrate and laminated substrate using same |
| CN111033687B (en) * | 2017-08-31 | 2023-10-24 | 日本电气硝子株式会社 | Support glass substrate and laminated substrate using same |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI673836B (en) | 2019-10-01 |
| TW201630128A (en) | 2016-08-16 |
| KR102509782B1 (en) | 2023-03-14 |
| JP2016155736A (en) | 2016-09-01 |
| KR20170095798A (en) | 2017-08-23 |
| JP6627388B2 (en) | 2020-01-08 |
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