CN111033687A - Supporting glass substrate and laminated substrate using same - Google Patents
Supporting glass substrate and laminated substrate using same Download PDFInfo
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- CN111033687A CN111033687A CN201880054592.1A CN201880054592A CN111033687A CN 111033687 A CN111033687 A CN 111033687A CN 201880054592 A CN201880054592 A CN 201880054592A CN 111033687 A CN111033687 A CN 111033687A
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- Surface Treatment Of Glass (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The support glass substrate of the present invention is a support glass substrate for supporting a processed substrate, and is characterized in that an information identification portion having dots as structural units is provided on a surface of the support glass substrate, and an average length of a crack propagating from a dot in a surface direction is 350 [ mu ] m or less.
Description
Technical Field
The present invention relates to a support glass substrate for supporting a processing substrate and a laminated substrate using the same, and more particularly, to a support glass substrate for supporting a processing substrate in a manufacturing process of a semiconductor package (semiconductor device) and a laminated substrate using the same.
Background
Portable electronic devices such as mobile phones, notebook personal computers, and pda (personal Data assistance) are required to be small and light. Accordingly, the mounting space for the semiconductor chips used in these electronic devices is also strictly limited, and high-density mounting of the semiconductor chips is a problem. Therefore, in recent years, high-density mounting of semiconductor packages has been achieved by a three-dimensional mounting technique in which semiconductor chips are stacked on each other and wiring connections are made between the semiconductor chips.
In addition, conventional Wafer Level Packages (WLPs) are manufactured by forming bumps in a wafer state and then dicing the wafer into individual pieces. However, the conventional WLP has a problem that the number of pins is not easily increased and the WLP is mounted in a state where the WLP is exposed to the rear surface of the semiconductor chip, so that the semiconductor chip is easily broken.
Therefore, a diffusion (fan out) type WLP has been proposed as a new WLP. The Fan out WLP can increase the number of pins and protect the end of the semiconductor chip, thereby preventing the semiconductor chip from being broken.
For fan out WLP, there are chip-first and chip-last manufacturing methods. In the chip-first type, for example, there is a step of molding a plurality of semiconductor chips with a sealing material of resin to form a processed substrate, and then wiring the processed substrate on one surface; a step of forming solder bumps, and the like. The post-chip type includes, for example, a step of providing a wiring layer on a support substrate, arranging a plurality of semiconductor chips, molding the semiconductor chips with a resin sealing material to form a processed substrate, and then forming solder bumps.
Further, a semiconductor package called a panel-level package (PLP) is also being studied recently. In PLP, in order to increase the number of semiconductor packages obtained per 1 supporting substrate and to reduce manufacturing cost, a supporting substrate having a rectangular shape and an amorphous sheet shape is used.
In the manufacturing process of these semiconductor packages, the heat treatment at about 200 ℃ may deform the sealing material and warp the processing substrate. When the processed substrate is warped, it becomes difficult to perform high-density wiring on one surface of the processed substrate, and it also becomes difficult to accurately form the solder bump.
In view of these circumstances, in order to suppress warpage of the processed substrate, it has been studied to use a glass substrate for supporting the processed substrate (see patent document 1).
The glass substrate is easy to smooth the surface and has rigidity. Therefore, when a glass substrate is used as the support substrate, the processing substrate can be firmly and accurately supported. In addition, the glass substrate easily transmits light such as ultraviolet light and infrared light. Therefore, when a glass substrate is used as the support substrate, the processed substrate can be easily fixed by providing an adhesive layer such as an ultraviolet-curable adhesive. Further, by providing a release layer or the like which absorbs infrared rays, the processed substrate can be easily separated. In another aspect, the processing substrate can be easily fixed and separated by providing an adhesive layer or the like with an ultraviolet curing tape or the like.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 2015-78113
Patent document 2: international publication No. 2016/136348
Disclosure of Invention
Problems to be solved by the invention
However, when an information identification portion (mark) of a two-dimensional code is formed (marked) on the surface of the support glass substrate, production information and the like of the support glass substrate (for example, the size of the glass substrate, the linear thermal expansion coefficient, the lot, the variation in the overall sheet thickness, the name of a manufacturer, the name of a seller) can be managed and recognized. The information recognizing portion is generally formed in the peripheral edge region of the support glass substrate and recognized by the eyes of a person in the form of characters, symbols, or the like. Further, in some cases, the information recognizing unit for supporting the glass substrate is automatically recognized by an optical element such as a CCD camera, and in this case, it is required that the information recognizing unit can recognize the information accurately even in an automated process.
As a method for forming the information discriminating portion, for example, a method is known in which a supporting glass substrate is irradiated with a laser beam, and a crack (mainly a crack in the thickness direction) is propagated on the supporting glass substrate by thermal shock before and after the irradiation, thereby forming the information discriminating portion (see patent document 2).
However, in this method, when the laminated substrate is heated to cure the resin of the sealing material in the step of manufacturing the fan out type WLP and PLP, the supporting glass substrate is easily broken due to a slight difference in thermal expansion coefficient between the processing substrate and the supporting glass substrate when the laminated substrate is cooled to room temperature after being heated.
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a support glass substrate in which a breakage is not easily generated in a manufacturing process of a fan out type WLP and PLP even when an information discriminating portion is formed on a surface thereof.
Means for solving the problems
The present inventors have conducted various experiments repeatedly, and as a result, have found that the above-described technical problem can be solved by limiting the length of the crack generated from the point constituting the information discriminating portion to a predetermined value or less, and have proposed the present invention. That is, the support glass substrate of the present invention is a support glass substrate for supporting a processing substrate, and is characterized in that an information discriminating portion having dots as a structural unit is provided on a surface of the support glass substrate, and a maximum length of a crack propagating from a dot in a surface direction is 350 μm or less. Here, the "maximum length of the crack propagating from the point in the surface direction" is a length obtained by measuring a length along the shape of the crack when observed by an optical microscope, and is not a length obtained by measuring a distance between two points by connecting a start point and an end point of the crack, nor a length obtained by measuring a length of the crack in the thickness direction. The maximum length of the crack propagating from the point in the surface direction can be controlled by the irradiation conditions (pulse width, irradiation diameter, irradiation speed, and the like) of the pulsed laser.
Further, it is preferable that the maximum length of the crack propagated from the point on the support glass substrate of the present invention in the surface direction is 0.1 μm or more.
Further, the point for supporting the glass substrate of the present invention is preferably formed by an annular groove. In this way, dots are easily formed by laser ablation (evaporation of glass by pulsed laser irradiation). As a result, when a spot is formed by irradiation with a pulsed laser beam, the irradiation conditions are controlled, whereby a spot can be formed without accumulating excessive heat in the glass in the irradiation region.
In the supporting glass substrate of the present invention, it is preferable that the average linear thermal expansion coefficient in the temperature range of 30 to 380 ℃ is 30X 10-7Over/° C and 165X 10-7Below/° c. In this way, when the ratio of the semiconductor chip to the sealing material is changed in the processing substrate, the thermal expansion coefficients of the processing substrate and the supporting glass substrate can be easily and strictly matched. Further, when the thermal expansion coefficients of both match, dimensional change (particularly, warp deformation) of the processing substrate at the time of processing is easily suppressed. As a result, warpage of the supporting glass substrate can be suppressed, and breakage of the supporting glass substrate starting from a crack in the information recognizing portion of the supporting glass substrate can be reduced. Here, the "average linear thermal expansion coefficient in a temperature range of 30 to 380 ℃ can be measured by an dilatometer.
The supporting glass substrate of the present invention preferably has a wafer shape or a substantially disk shape with a diameter of 100 to 500mm, a plate thickness of less than 2.0mm, and a variation in the overall plate thickness of 5 μm or less. Here, the "entire thickness deviation" is a difference between the maximum thickness and the minimum thickness of the entire support glass substrate, and can be measured by, for example, SBW-331ML/d manufactured by KOBELCO scientific research corporation. The "warpage amount" is the sum of the absolute value of the maximum distance between the highest position and the least square focal plane of the entire support glass substrate and the absolute value of the lowest position and the least square focal plane, and can be measured, for example, by the Bow/Warp measuring device SBW-331ML/d manufactured by KOBELCO scientific research.
The supporting glass substrate of the present invention preferably has a quadrangular shape with sides of 300mm or more, a thickness of less than 2.0mm, and a variation in the overall thickness of 10 μm or less.
The laminated substrate of the present invention preferably includes at least a processing substrate and a support glass substrate for supporting the processing substrate, and the support glass substrate is the above-described support glass substrate.
In the laminated substrate of the present invention, the processing substrate preferably includes at least a semiconductor chip molded with a sealing material.
Preferably, the method for manufacturing a semiconductor package of the present invention includes: preparing a laminated substrate including at least a processing substrate and a support glass substrate for supporting the processing substrate; and a step of processing the processing substrate, wherein the support glass substrate is the support glass substrate.
In the method for manufacturing a semiconductor package according to the present invention, the processing preferably includes a step of wiring one surface of the processing substrate.
In the method for manufacturing a semiconductor package according to the present invention, the processing preferably includes a step of forming a solder bump on one surface of the processing substrate.
The glass substrate of the present invention is characterized in that the glass substrate is provided with an information recognition portion having dots as structural units on the surface, and the maximum length of a crack propagating from a dot in the surface direction is 350 [ mu ] m or less.
An embodiment of the present invention will be described below with reference to fig. 1 to 4. Fig. 1 is a plan view of a support glass substrate 1 according to an embodiment of the present invention. The support glass substrate 1 can be used to support a processing substrate. As shown in the figure, the support glass substrate 1 has an information discriminating portion 3 formed on its surface 2. In the present embodiment, the support glass substrate 1 has a substantially disk shape. Further, a notch 4 is provided as a positioning portion in the peripheral edge portion 1a of the support glass substrate 1, and an information discriminating portion 3 is formed in the vicinity of the notch 4.
As shown in fig. 2, the information recognition unit 3 includes a combination of a plurality of characters 5 (the characters 5 referred to herein include ideographic characters such as numerals as shown in fig. 2, for example). As shown in the enlarged view of portion a in fig. 2, each character 5 is formed of a plurality of dots 6. The phase θ (fig. 2) of the circumferential center position C4 of the information identifier 3 is set to 2 ° or more and 10 ° or less with reference to the circumferential center position C3 of the notch 4.
Further, each point 6 will be described. Fig. 4 shows a point 6 shown in the portion B of fig. 3 in an enlarged manner, and as shown in the figure, each point 6 is formed by an annular groove 7. Therefore, each dot 6 constituting the character 5 is recognized as a ring (fig. 3 and 4). In the present embodiment, the groove 7 has an annular shape. The outer peripheral edge and the inner peripheral edge of the groove 7 are circular at the same time. Therefore, in this case, the width dimension of the groove 7 is constant over the entire circumference.
The crack 8 is propagated from the annular groove 7, but the maximum length of the crack 8 in the surface direction is 0.5 to 10 μm.
Drawings
Fig. 1 is a schematic plan view showing an example of the support glass substrate of the present invention.
Fig. 2 is an enlarged view of a main portion of the support glass substrate shown in fig. 1.
Fig. 3 is an enlarged view of a portion a of the support glass substrate shown in fig. 2.
Fig. 4 is an enlarged view of a portion B of the support glass substrate shown in fig. 3.
Fig. 5 is a schematic perspective view showing an example of the laminated substrate of the present invention.
Fig. 6 is a schematic cross-sectional view showing a chip-first manufacturing process of a fan out WLP.
FIG. 7 is a photomicrograph of sample No.2 according to the example.
FIG. 8 is a photomicrograph of sample No.11 according to comparative example.
Detailed Description
The support glass substrate of the present invention includes an information recognizing portion having dots as constituent elements on a surface of the support glass substrate.
The information recognition unit has 1 or more elements selected from characters, symbols, two-dimensional codes, and figures, and the elements are composed of a plurality of dots. Preferably, the information identification unit displays at least 1 piece of information selected from the group consisting of the size of the supporting glass substrate, the linear thermal expansion coefficient, the lot, the thickness variation ratio, the manufacturer name, the seller name, and the material code. The "dimension" referred to herein is defined to include a thickness dimension, an outer diameter dimension, a dimension of the notch portion, and the like of the support glass substrate.
The maximum length of the crack extending from the point on the surface of the support glass substrate is 350 μm or less, preferably 300 μm or less, 250 μm or less, 0.1 to 180 μm, 0.3 to 100 μm, 0.3 to 50 μm, 0.5 to 30 μm, 0.5 to 20 μm, 0.8 to 10 μm, and particularly 1 to 5 μm. If the maximum length of the crack in the surface direction is too large, the support glass substrate is likely to be damaged in the manufacturing process of the fan out WLP and PLP. When the cracks in the surface direction generated from the dots are completely eliminated, the supporting glass substrate is less likely to be broken in the manufacturing process of the fan out type WLP and PLP, but in this case, the dots are less likely to be formed in a short time by laser ablation, and the formation efficiency of the information discriminating portion extremely decreases.
In the supporting glass substrate of the present invention, the maximum length of the crack propagating from the point in the thickness direction is preferably 200 μm or less, 100 μm or less, 50 μm or less, 30 μm or less, 20 μm or less, 10 μm or less, and particularly 5 μm or less. If the maximum length of the crack in the thickness direction is too large, the support glass substrate is likely to be damaged in the manufacturing process of the fan out WLP and PLP.
The outer diameter of the dots is preferably 0.05 to 0.20mm, 0.07 to 0.13mm or less, particularly 0.09 to 0.11 mm. When the outer diameter of the dot is too small, the visibility of the information identifying portion is likely to be reduced. On the other hand, when the outer diameter of the dots is too large, the strength of the support glass substrate is easily secured.
The center-to-center distance between mutually adjacent points is preferably 0.06-0.25 mm. When the center-to-center distance between the mutually adjacent points is too small, the strength of the supporting glass substrate is easily ensured. On the other hand, when the center-to-center distance between mutually adjacent dots is too large, the visibility of the information identification portion is easily lowered.
The information discriminating portion may be formed by various methods, and in the present invention, it is preferable to irradiate a pulsed laser beam and ablate glass in the irradiated region to form the information discriminating portion, in other words, to form the information discriminating portion by laser ablation. In this way, ablation can be performed without accumulating excessive heat in the glass in the irradiation region. As a result, not only the length of the crack in the thickness direction but also the length of the crack in the surface direction extending from the point can be reduced.
When the information discriminating portion is formed by laser ablation, the irradiation condition of the laser light is not particularly limited, and for example, the pulse width of the pulsed laser light is set to the picosecond level, preferably the femtosecond level, and more specifically, preferably 10fs or more and 500000fs (500ps) or less. The wavelength of the pulse laser is preferably 200nm to 2500nm, and the repetition frequency thereof is preferably 1Hz to 1G (giga) Hz. The beam diameter of the pulse laser is preferably 1 μm to 100 μm, and the scanning speed is preferably 1mm/s to 800 mm/s. When the pulse width of the pulse laser is too large, thermal strain is likely to occur during laser irradiation.
The information discriminating portion has a dot as a structural unit, and the shape of the dot is preferably an annular groove. In this way, when the dots are formed as the annular grooves, the regions surrounded by the annular grooves (regions inside the grooves) remain without being removed by the laser beam, and thus the strength of the regions where the information recognizing portions are provided can be prevented from being reduced as much as possible. In the case of the annular groove, the visibility is not greatly reduced even if the width of the groove is reduced as long as the outer diameter is not changed. Therefore, if the width is reduced without changing the outer diameter of the groove, the volume of the region inside the groove can be increased accordingly, and thus the required strength can be secured while ensuring visibility.
The depth of the groove for forming the dots is preferably 2 to 30 μm. When the depth dimension of the groove is too small, the visibility of the information identifying portion is easily reduced. On the other hand, if the depth of the groove is too large, the strength of the support glass substrate is easily ensured.
The Young's modulus of the supporting glass substrate is preferably 60GPa or more, 65GPa or more, 70GPa or more, and particularly 75 to 130 GPa. When the proportion of the semiconductor chips in the processed substrate is small and the proportion of the sealing material is large, the rigidity of the entire laminated substrate is reduced, and the processed substrate is likely to warp in the processing step. Therefore, when the young's modulus of the supporting glass substrate is increased, the warpage of the processed substrate is easily reduced, and the breakage of the supporting glass substrate from the crack in the information identification portion of the supporting glass substrate can be reduced.
The thermal expansion coefficient of the support glass substrate is preferably limited so as to match the thermal expansion coefficient of the processing substrate. Specifically, when the proportion of the semiconductor chip in the processing substrate is small and the proportion of the sealing material is large, it is preferable to increase the thermal expansion coefficient of the supporting glass substrate, and conversely, when the proportion of the semiconductor chip in the processing substrate is large and the proportion of the sealing material is small, it is preferable to decrease the thermal expansion coefficient of the supporting glass substrate.
The average linear thermal expansion coefficient of the support glass substrate in the temperature range of 30-380 ℃ is limited to 30 x 10-7over/DEG C and less than 50X 10-7In the case of/° c, the glass composition preferably contains SiO in mass%255％～75％、Al2O315％～30％、Li2O 0.1％～6％、Na2O+K2O(Na2O and K2Total amount of O) 0 to 8%, MgO + CaO + SrO + BaO (total amount of MgO, CaO, SrO and BaO) 0 to 10%, and further preferably SiO255％～75％、Al2O310％～30％、Li2O+Na2O+K2O(Li2O、Na2O and K2Total amount of O) 0 to 0.3%, MgO + CaO + SrO + BaO 5 to 20%, and further preferably SiO255％～68％、Al2O312％～25％、B2O30 to 15%, MgO + CaO + SrO + BaO 5 to 30%, and further preferably SiO is contained in mass%265％～75％、Al2O31％～10％、B2O310％～20％、Li2O0％～3％、Na2O+K2O3-9% and MgO + CaO + SrO + BaO 0-5%. The average linear thermal expansion coefficient of the support glass substrate in the temperature range of 30-380 ℃ is limited to 50 x 10-7over/DEG C and less than 70X 10-7In the case of/° c, the glass composition preferably contains SiO in mass%255％～75％、Al2O33％～15％、B2O35％～20％、MgO0％～5％、CaO 0％～10％、SrO 0％～5％、BaO 0％～5％、ZnO 0％～5％、Na2O 5％～15％、K2O0% to 10%, more preferably SiO264％～71％、Al2O35％～10％、B2O38％～15％、MgO 0％～5％、CaO 0％～6％、SrO 0％～3％、BaO 0％～3％、ZnO 0％～3％、Na2O 5％～15％、K2O0-5%. The average linear thermal expansion coefficient of the support glass substrate in the temperature range of 30-380 ℃ is limited to 70 x 10-7over/DEG C and 85X 10-7When the glass composition is not more than/° C, it is preferable that SiO is contained in mass% as the glass composition260％～75％、Al2O35％～15％、B2O35％～20％、MgO 0％～5％、CaO 0％～10％、SrO 0％～5％、BaO 0％～5％、ZnO 0％～5％、Na2O 7％～16％、K2O0% to 8%, more preferably SiO260％～68％、Al2O35％～15％、B2O35％～20％、MgO 0％～5％、CaO 0％～10％、SrO 0％～3％、BaO 0％～3％、ZnO 0％～3％、Na2O 8％～16％、K 20 to 3 percent of O. The average linear thermal expansion coefficient of the support glass substrate in the temperature range of 30-380 ℃ is limited to 70 x 10-7over/DEG C and 85X 10-7When the glass composition is not more than/° C, it is preferable that SiO is contained in mass% as the glass composition 210％～60％、Al2O30％～8％、B2O30％～20％、BaO 10％～40％、TiO2+La2O33 to 30 percent. The average linear thermal expansion coefficient of the support glass substrate in the temperature range of 30-380 ℃ is limited to 50 x 10-7over/DEG C and 85X 10-7When the glass composition is not more than/° C, it is preferable that SiO is contained in mass% as the glass composition245％～65％、Al2O30％～15％、B2O30％～20％、MgO 0％～3％、CaO 1％～20％、SrO 0％～20％、BaO 0％～30％、ZnO 0％～5％、ZrO 20％～10％、TiO 20％～20％、Nb2O50％～20％、La2O30％～30％、Na2O 0％～5％、K2O0% to 10%, more preferably SiO245％～60％、Al2O36％～13％、B2O30 to 5 percent of MgO, 0 to 3 percent of MgO, 1 to 5 percent of CaO, 10 to 20 percent of SrO and 15 to 30 percent of BaO. Further, it preferably contains SiO 220％～60％、B2O30％～20％、CaO 3％～20％、SrO 0％～3％、BaO 5％～20％、ZrO 20％～10％、TiO 20％～20％、Nb2O50％～20％、La2O30％～30％、Na2O 0％～5％、K 20 to 10 percent of O. Limiting the average linear thermal expansion coefficient of the support glass substrate to more than 85 x 10 in the temperature range of 30 to 380 DEG C-7/° C and 120X 10-7When the glass composition is not more than/° C, it is preferable that SiO is contained in mass% as the glass composition255％～70％、Al2O33％～13％、B2O32％～8％、MgO 0％～5％、CaO 0％～10％、SrO 0％～5％、BaO 0％～5％、ZnO 0％～5％、Na2O 10％～21％、K2O0-5%. Limiting the average linear thermal expansion coefficient of the supporting glass substrate to be more than 120 x 10 in the temperature range of 30-380 DEG C-7/° C and 165X 10-7When the glass composition is not more than/° C, SiO is preferably contained in mass% as the glass composition253％～65％、Al2O33％～13％、B2O30％～5％、MgO 0.1％～6％、CaO 0％～10％、SrO 0％～5％、BaO 0％～5％、ZnO 0％～5％、Na2O+K2O 2O％～40％、Na2O 12％～21％、K2O7-21 percent. In this way, the thermal expansion coefficient can be easily controlled within the control target range, and the devitrification resistance is improved, so that the support glass substrate with small variations in the entire thickness can be easily produced.
The liquidus temperature of the support glass substrate is preferably less than 1150 ℃, 1120 ℃ or less, 1100 ℃ or less, 1080 ℃ or less, 1050 ℃ or less, 1010 ℃ or less, 980 ℃ or less, 960 ℃ or less, 950 ℃ or less, particularly 940 ℃ or less. In addition, branch and branchThe liquid phase viscosity of the glass substrate is preferably 104.810 dPas or more5.010 dPas or more5.210 dPas or more5.4dPas or more, particularly 105.6dPas or more. Thus, the sheet can be easily formed into a plate shape by the down-draw method, particularly the overflow down-draw method, and therefore, even if the surface is not polished, the entire thickness variation can be reduced. Alternatively, the overall thickness variation can be reduced to less than 2.0 μm, particularly less than 1.0 μm, by a small amount of grinding. As a result, the manufacturing cost of the support glass substrate can be reduced. The "liquidus temperature" can be calculated as follows: the glass powder which passed through a standard sieve of 30 mesh (500 μm) and remained in 50 mesh (300 μm) was put into a platinum boat, and then kept in a temperature gradient furnace for 24 hours, and the temperature at which crystals were precipitated was measured to calculate the crystal growth rate. The "liquidus viscosity" can be calculated by measuring the viscosity of the glass at the liquidus temperature by the platinum ball pulling method.
The support glass substrate of the present invention preferably has the following shape.
The support glass substrate of the present invention is preferably in a wafer shape or a substantially disk shape, and the diameter thereof is preferably 100mm or more and 500mm or less, particularly 150mm or more and 450mm or less. This makes it easy to apply the method to a manufacturing process of fan out type WLP. The support glass substrate of the present invention is preferably a quadrangular shape (particularly, a rectangular shape), and the length of each side is preferably 300mm to 600mm, 400mm to 550mm, 415mm to 515mm, particularly 450mm to 510 mm. This can be easily applied to the production process of fan out type PLP.
In the supporting glass substrate of the present invention, the thickness is preferably less than 2.0mm, and is 1.8mm or less, 1.6mm or less, 1.5mm or less, 1.2mm or less, 1.1mm or less, 1.0mm or less, and particularly 0.9mm or less. The thinner the plate thickness is, the lighter the weight of the laminated substrate is, and thus the workability is improved. On the other hand, if the thickness is too small, the strength of the support glass substrate itself is reduced, and the function as a support substrate is not easily realized. Therefore, the plate thickness is preferably 0.1mm or more, 0.2mm or more, 0.3mm or more, 0.4mm or more, 0.5mm or more, 0.6mm or more, and particularly more than 0.7 mm.
In the supporting glass substrate of the present invention, the total thickness variation is preferably 10 μm or less, 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, and particularly 0.1 μm or more and less than 1 μm. The arithmetic average roughness Ra is preferably 20nm or less, 10nm or less, 5nm or less, 2nm or less, 1nm or less, particularly 0.5nm or less. The higher the surface accuracy, the easier it is to improve the accuracy of the machining process. In particular, since the wiring accuracy can be improved, high-density wiring can be performed. In addition, the strength of the supporting glass substrate is improved, and the supporting glass substrate and the laminated substrate are not easily damaged. Thereby increasing the number of times the supporting glass substrate is reused. The "arithmetic average roughness Ra" can be measured by a stylus surface roughness meter or an Atomic Force Microscope (AFM).
In the supporting glass substrate of the present invention, the warpage amount is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 to 45 μm, and particularly 5 to 40 μm. The smaller the amount of warpage, the more easily the precision of the processing is improved. In particular, since the wiring accuracy can be improved, high-density wiring can be performed.
In the supporting glass substrate of the present invention, the circularity is preferably 1mm or less, 0.1mm or less, 0.05mm or less, and particularly 0.03mm or less. The smaller the roundness, the easier the application to the production process of fan out type WLP and PLP. The "roundness" is a value obtained by subtracting the minimum value from the maximum value of the outer shape except for the notch portion.
The support glass substrate of the present invention preferably has a notch portion, and the deep portion of the notch portion is more preferably substantially circular or substantially V-groove shaped in plan view. Thus, the positioning member such as a positioning pin is brought into contact with the notch portion of the support glass substrate, and the support glass substrate is easily fixed to a position. As a result, the support glass substrate and the processing substrate can be easily aligned. In particular, the notch portion is formed also in the processing substrate, and when the positioning member is brought into contact with the notch portion, the entire laminated substrate can be easily aligned. The notch portion is in contact with the positioning member, so that cracks are likely to occur, and the supporting glass substrate of the present invention has high crack resistance, and is therefore particularly effective in the case where the notch portion is provided.
When the notch portion of the supporting glass substrate abuts against the positioning member, stress is easily concentrated on the notch portion, and the supporting glass substrate is easily broken with the notch portion as a starting point. In particular, this tendency becomes remarkable when the support glass substrate is bent by an external force. Therefore, in the supporting glass substrate of the present invention, it is preferable that all or a part of an edge region where the surface of the notch portion intersects with the end face is chamfered. This can effectively avoid the breakage of the notch portion as a starting point.
In the present invention, the entire or a part of the edge region where the surface of the notch portion of the supporting glass substrate intersects with the end face is chamfered, preferably 50% or more of the edge region where the surface of the notch portion intersects with the end face is chamfered, more preferably 90% or more of the edge region where the surface of the notch portion intersects with the end face is chamfered, and further preferably the entire edge region where the surface of the notch portion intersects with the end face is chamfered. The larger the chamfered region in the notch portion is, the lower the probability of breakage from the notch portion as a starting point.
The chamfer width in the surface direction of the notch is preferably 50 to 900 μm, 200 to 800 μm, 300 to 700 μm, 400 to 650 μm, and particularly 500 to 600 μm. When the chamfer width in the surface direction of the notch portion is too small, the supporting glass substrate is easily broken with the notch portion as a starting point. On the other hand, if the chamfering width in the surface direction of the notch portion is too large, chamfering efficiency is lowered, and the manufacturing cost of the support glass substrate tends to increase.
The chamfer width in the plate thickness direction of the notch portion is preferably 5% to 80%, 20% to 75%, 30% to 70%, 35% to 65%, particularly 40% to 60% of the plate thickness. When the chamfer width in the plate thickness direction of the notch portion is too small, the supporting glass substrate is easily broken with the notch portion as a starting point. On the other hand, if the chamfer width of the notch portion in the plate thickness direction is too large, external force tends to concentrate on the end face of the notch portion, and the support glass substrate tends to be damaged from the end face of the notch portion as a starting point.
The support glass substrate of the present invention is preferably produced by mixing and mixing glass raw materials to produce a glass batch, charging the glass batch into a glass melting furnace, clarifying and stirring the obtained molten glass, supplying the glass to a forming apparatus, and forming the glass into a sheet.
The support glass substrate of the present invention is preferably formed by a downdraw method, particularly an overflow downdraw method. The overflow downdraw method is a method of forming a plate by overflowing molten glass from both sides of a heat-resistant gutter-shaped structure, joining the overflowing molten glass at the lower tip of the gutter-shaped structure, and extending and forming the molten glass downward. In the overflow downdraw method, the surface to be the surface supporting the glass substrate is formed in a free surface state without contacting the gutter-shaped refractory. Therefore, the overall thickness variation can be reduced to less than 2.0 μm, particularly less than 1.0 μm, by a small amount of polishing. As a result, the manufacturing cost of the support glass substrate can be reduced.
The support glass substrate of the present invention is preferably formed by molding by the overflow downdraw method and then polishing the surface. Thus, the thickness variation of the entire sheet can be easily limited to less than 2.0. mu.m, 1.5 μm or less, 1.0 μm or less, particularly 0.1 μm or more and less than 1.0. mu.m.
The supporting glass substrate of the present invention is preferably not subjected to ion exchange treatment, and preferably has no compressive stress layer on the surface. When the ion exchange treatment is performed, it is difficult to reduce the variation in the thickness of the entire supporting glass substrate, but when the ion exchange treatment is not performed, such a problem can be solved. The support glass substrate of the present invention does not exclude the ion exchange treatment and the formation of the compressive stress layer on the surface. When the ion exchange treatment is performed, a compressive stress layer is preferably formed on the surface of the metal foil, from the viewpoint of improving the mechanical strength.
The laminated substrate of the present invention is characterized by comprising at least a processing substrate and a support glass substrate for supporting the processing substrate, and the support glass substrate is the above-described support glass substrate. The laminated substrate of the present invention preferably has an adhesive layer between the processing substrate and the support glass substrate. The adhesive layer is preferably a resin, and is preferably a thermosetting resin, a photocurable resin (particularly an ultraviolet-curable resin), or the like, for example. Further, it is preferable to have heat resistance that can withstand heat treatment in the manufacturing process of fan out type WLP and PLP. Thus, the adhesive layer is not easily melted in the manufacturing process of the fan out type WLP and PLP, and the precision of the processing can be improved. In order to facilitate fixing of the processing substrate and the supporting glass substrate, an ultraviolet curing tape may be used as the adhesive layer.
The laminated substrate of the present invention preferably further includes a peeling layer between the processing substrate and the supporting glass substrate, more specifically, between the processing substrate and the adhesive layer, or between the supporting glass substrate and the adhesive layer. In this way, after the predetermined processing treatment is performed on the processing substrate, the processing substrate is easily peeled from the support glass substrate. The separation of the processing substrate is preferably performed by irradiating light such as laser light from the viewpoint of productivity. As the laser light source, an infrared laser light source such as YAG laser (wavelength of 1064nm) or semiconductor laser (wavelength of 780 to 1300nm) can be used. In addition, a resin that is decomposed by irradiation with an infrared laser may be used for the release layer. In addition, a substance that efficiently absorbs infrared rays and converts the infrared rays into heat may be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment, or the like may be added to the resin.
The release layer is made of a material that causes "intra-layer peeling" or "interfacial peeling" by irradiation with light such as laser light. In other words, it is composed of: the material is a material in which bonding force between atoms or molecules is lost or reduced, ablation (ablation) occurs, and the like, and peeling occurs when light of a certain intensity is irradiated. In addition, there are a case where a component contained in the separation layer is released as a gas by irradiation with light and a case where the separation layer absorbs light and releases a vapor thereof to separate.
In the laminated substrate of the present invention, the supporting glass substrate is preferably larger than the processing substrate. Thus, when the processing substrate and the supporting glass substrate are supported, even if the center positions of the processing substrate and the supporting glass substrate are slightly shifted, the edge portion of the processing substrate is less likely to protrude from the supporting glass substrate.
The method for manufacturing a semiconductor package according to the present invention includes: preparing a laminated substrate including at least a processing substrate and a support glass substrate for supporting the processing substrate; and a step of processing the processing substrate, wherein the support glass substrate is the support glass substrate.
The method for manufacturing a semiconductor package of the present invention preferably further includes a step of transferring the laminated substrate. This improves the processing efficiency of the processing. The "step of conveying the laminated substrate" and the "step of processing the processed substrate" may be performed simultaneously without being separately performed.
In the method for manufacturing a semiconductor package according to the present invention, the processing is preferably a process of performing wiring on one surface of the processing substrate or a process of forming a solder bump on one surface of the processing substrate. In the method for manufacturing a semiconductor package according to the present invention, since the processing substrate is less likely to undergo dimensional change during these processes, these processes can be appropriately performed.
As the processing treatment, in addition to the above, any of the following treatments may be used: the treatment includes a treatment of mechanically polishing one surface of the processed substrate (usually, the surface on the opposite side to the supporting glass substrate), a treatment of dry-etching one surface of the processed substrate (usually, the surface on the opposite side to the supporting glass substrate), and a treatment of wet-etching one surface of the processed substrate (usually, the surface on the opposite side to the supporting glass substrate). In the method for manufacturing a semiconductor package according to the present invention, warpage is less likely to occur in the processing substrate, and the rigidity of the laminated substrate can be maintained. As a result, the above-described processing can be appropriately performed.
The invention is further described with reference to the accompanying drawings. Fig. 5 is a schematic perspective view showing an example of the laminated substrate 9 of the present invention. In fig. 5, the laminated substrate 9 includes: supporting the glass substrate 10 and the processing substrate 11. In order to prevent the dimensional change of the processing substrate 11, the support glass substrate 10 is bonded to the processing substrate 11. A release layer 12 and an adhesive layer 13 are disposed between the support glass substrate 10 and the processing substrate 11. The release layer 12 is in contact with the support glass substrate 10, and the adhesive layer 13 is in contact with the processing substrate 11.
As can be seen from fig. 5, the laminated substrate 9 is formed by laminating a support glass substrate 10, a release layer 12, an adhesive layer 13, and a processing substrate 11 in this order. The shape of the support glass substrate 10 is determined according to the processing substrate 11, and in fig. 1, the shapes of the support glass substrate 10 and the processing substrate 11 are both substantially circular disk shapes. For the release layer 12, for example, a resin decomposed by irradiation with laser light can be used. In addition, a substance that efficiently absorbs laser light and converts the laser light into heat may be added to the resin. Such as carbon black, graphite powder, fine metal powder, dyes, pigments, and the like. The peeling layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like. The adhesive layer 13 is made of a resin, and is formed by applying, for example, various printing methods, an ink-jet method, a spin coating method, a roll coating method, or the like. In addition, an ultraviolet curing type tape may also be used. After the supporting glass substrate 10 is peeled from the processing substrate 11 by the peeling layer 12, the adhesive layer 13 is dissolved and removed by a solvent or the like. The ultraviolet-curable adhesive tape can be removed by a peeling tape after irradiation with ultraviolet rays.
Fig. 6 is a schematic cross-sectional view showing a chip-first manufacturing process of a fan out WLP. Fig. 6(a) shows a state where an adhesive layer 21 is formed on one surface of the support member 20. If necessary, a release layer may be formed between the support member 20 and the adhesive layer 21. Next, as shown in fig. 6(b), a plurality of semiconductor chips 22 are bonded to the adhesive layer 21. At this time, the active surface of the semiconductor chip 22 is brought into contact with the adhesive layer 21. Next, as shown in fig. 6(c), the semiconductor chip 22 is molded with a resin sealing material 23. The sealing material 23 is a material which is less susceptible to dimensional change after compression molding and dimensional change during wiring molding. Next, as shown in fig. 6(d) and (e), the processing substrate 24 on which the semiconductor chip 22 is molded is separated from the support member 20, and then is fixed to the support glass substrate 26 via the adhesive layer 25. At this time, of the surfaces of the processing substrate 24, the surface opposite to the surface where the semiconductor chip 22 is embedded is disposed on the supporting glass substrate 26 side. Thus, the laminated substrate 27 is obtained. If necessary, a release layer may be formed between the adhesive layer 25 and the support glass substrate 26. After the obtained laminated substrate 27 is transferred, as shown in fig. 6(f), the wiring 28 is formed on the surface of the processing substrate 24 on the side where the semiconductor chip 22 is embedded, and then a plurality of solder bumps 29 are formed. Finally, after separating the processed substrate 24 from the supporting glass substrate 26, the processed substrate 24 is cut into the semiconductor chips 22 and then supplied to the subsequent packaging step (fig. 6 g).
The glass substrate of the present invention is characterized in that the glass substrate is provided with an information recognition portion having dots as structural units on the surface, and the maximum length of a crack propagating from a dot in the surface direction is 350 [ mu ] m or less. The technical features of the glass substrate of the present invention are described in the description of the supporting glass substrate of the present invention, and a detailed description thereof is omitted here.
Examples
The present invention will be described below based on examples. The following examples are merely illustrative. The present invention is not limited to the following examples.
Table 1 shows examples (sample Nos. 1 to 10) and comparative example (sample No.11) of the present invention.
[ Table 1]
| No.1 | No.2 | No.3 | No.4 | No.5 | No.6 | No.7 | No.8 | No.9 | No.10 | No.11 | |
| Coefficient of linear thermal expansion (× 10)-1/℃) | 35 | 58 | 75 | 91 | 70 | 48 | 95 | 102 | 112 | 102 | 102 |
| Maximum crack length (mum) | 4 | 9 | 8 | 196 | |
5 | 35 | 97 | 45 | 85 | 352 |
| Procedure (ii)Breakage of | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | × |
The glass substrate of sample No.1 was produced as follows. First, SiO is contained in mass% as a glass composition259.7％、Al2O316.5％、B2O310.3％、MgO 0.3％、CaO 8.0％、SrO 4.5％、BaO0.5％、SnO2Glass raw materials were mixed and mixed to 0.2% to obtain a glass batch, and then the glass batch was supplied to a glass melting furnace to be melted at 1550 ℃. Then, the resulting glass substrate was cut into a rectangular shape.
The glass substrate of sample No.2 was produced as follows. First, SiO is contained in mass% as a glass composition266.1％、Al2O38.5％、B2O312.4％、Na2O 8.4％、CaO 3.3％、ZnO 0.9％、SnO2Glass raw materials were mixed and mixed so as to be 0.4%, and after obtaining a glass batch, the glass batch was supplied to a glass melting furnace and melted at 1500 ℃, and then the obtained molten glass was clarified and stirred, and then supplied to a forming apparatus of an overflow downdraw method, and formed so that the thickness thereof became 1.05 mm. Then, the resulting glass substrate was cut into a rectangular shape.
According to the following manner of the present invention,a glass substrate of sample No.3 was produced. First, SiO is contained in mass% as a glass composition265.8％、Al2O38.0％、B2O38.9％、Na2O 12.8％、CaO 3.2％、ZnO 0.9％、SnO2Glass raw materials were mixed and mixed so as to be 0.4%, and after obtaining a glass batch, the glass batch was supplied to a glass melting furnace and melted at 1500 ℃, and then the obtained molten glass was clarified and stirred, and then supplied to a forming apparatus of an overflow downdraw method, and formed so that the thickness thereof became 1.05 mm. Then, the resulting glass substrate was cut into a rectangular shape.
A glass substrate of sample No.4 was produced as follows. First, SiO is contained in mass% as a glass composition261.6％、Al2O318.0％、B2O30.5％、Na2O 14.5％、K2O 2.0％、MgO 3.0％、SnO2Glass raw materials were mixed and mixed in a 0.4% manner to obtain a glass batch, and then the glass batch was supplied to a glass melting furnace to be melted at 1650 ℃, and then the obtained molten glass was clarified and stirred, and then supplied to a forming apparatus of an overflow down-draw method to be formed so that the thickness thereof became 1.05 mm. Then, the resulting glass substrate was cut into a rectangular shape.
A glass substrate of sample No.5 was produced in the following manner. First, SiO is contained in mass% as a glass composition240.92％、Al2O35.0％、B2O35.0％、CaO 3.0％、SrO 11.2％、BaO 25.2％、ZnO3.0％、TiO24.6％、ZrO22.0％、Sb2O3Glass raw materials were mixed and mixed so as to be 0.08%, and after obtaining a glass batch, the glass batch was supplied to a glass melting furnace and melted at 1250 ℃, and then the obtained molten glass was clarified and stirred, and then supplied to a forming apparatus of an overflow downdraw method, and formed so that the thickness thereof became 1.05 mm. Then, the resulting glass substrate was cut into a rectangular shape.
A glass substrate of sample No.6 was produced as follows. First, according to the glassA glass composition containing SiO in mass%272.75％、Al2O34.3％、B2O315.1％、Na2O 5.7％、K2O 1.8％、CaO 0.2％、SnO2Glass raw materials were mixed and mixed in a 0.15% manner to obtain a glass batch, and then the glass batch was supplied to a glass melting furnace to be melted at 1600 ℃, and then the obtained molten glass was clarified and stirred, and then supplied to a forming apparatus of an overflow downdraw method to be formed so that the thickness thereof became 1.05 mm. Then, the resulting glass substrate was cut into a rectangular shape.
A glass substrate of sample No.7 was produced in the following manner. First, SiO is contained in mass% as a glass composition265.8％、Al2O38.0％、B2O33.7％、Na2O 18.1％、CaO 3.2％、ZnO 0.9％、SnO2Glass raw materials were mixed and mixed to 0.3% to obtain a glass batch, and then the glass batch was supplied to a glass melting furnace to be melted at 1300 ℃. Then, the resulting glass substrate was cut into a rectangular shape.
A glass substrate of sample No.8 was produced in the following manner. First, SiO is contained in mass% as a glass composition265.7％、Al2O38.0％、B2O32.1％、Na2O 19.8％、CaO 3.2％、ZnO 0.9％、SnO2Glass raw materials were mixed and mixed to 0.3% to obtain a glass batch, and then the glass batch was supplied to a glass melting furnace to be melted at 1300 ℃. Then, the resulting glass substrate was cut into a rectangular shape.
A glass substrate of sample No.9 was produced in the following manner. First, SiO is contained in mass% as a glass composition265.3％、Al2O38.0％、Na2O 22.3％、CaO 3.2％、ZnO 0.9％、SnO2Glass raw materials were mixed and mixed to 0.3% to obtain a glass batch, and then the glass batch was supplied to a glass melting furnace to be melted at 1300 ℃. Then, the resulting glass substrate was cut into a rectangular shape.
Glass substrates of samples No.10 and 11 were produced as follows. First, SiO is contained in mass% as a glass composition265.7％、Al2O38.0％、B2O32.1％、Na2O 19.8％、CaO 3.2％、ZnO 0.9％、SnO2Glass raw materials were mixed and mixed in a 0.3% manner to obtain a glass batch, and then the glass batch was supplied to a glass melting furnace to be melted at 1650 ℃, and then the obtained molten glass was clarified and stirred, and then supplied to a forming apparatus of an overflow down-draw method to be formed so that the thickness thereof became 1.05 mm. Then, the resulting glass substrate was cut into a rectangular shape.
Next, the cut glass substrate (sample Nos. 1 to 11: having a total thickness deviation of about 4.0 μm) was dug out to have a diameter of 300mm, and then both surfaces of the glass substrate were polished by a polishing apparatus. Specifically, both surfaces of the glass substrate are sandwiched by a pair of polishing pads having different outer diameters, and both surfaces of the glass substrate are polished while rotating the glass substrate together with the pair of polishing pads. During the polishing process, the control was occasionally performed so that a part of the glass substrate protruded from the polishing pad. The polishing pad was made of polyurethane, and the average particle diameter of the polishing slurry used in the polishing treatment was 2.5 μm, and the polishing rate was 15 m/min. The obtained glass substrates after each polishing treatment were measured for the total thickness deviation and warpage by a Bow/Warp measuring apparatus SBW-331ML/d manufactured by KOBELCO scientific research. As a result, the thickness deviation of the entire sheet was less than 1.0 μm, and the warpage amount was 35 μm or less. The average linear thermal expansion coefficient of each of the obtained polished glass substrates was measured by a dilatometer at a temperature ranging from 30 to 380 ℃. The results are shown in table 1.
The glass substrate after polishing was provided with an information discriminating portion having a plurality of points constituted by annular grooves as a structural unit, using a pulsed femtosecond laser. In samples nos. 1 to 11, the maximum length of the crack propagating from the point was controlled by adjusting the pulse width of the pulsed femtosecond laser. Next, the maximum length of the crack generated from the spot was measured using a digital microscope VHX-600 (manufactured by KEYENCE). The results are shown in table 1, fig. 7, and fig. 8. FIG. 7 is a photomicrograph of sample No. 2. FIG. 8 is a photomicrograph of sample No. 11. The maximum length of the crack was obtained by measuring the length of the crack drawn by the length measuring software.
The glass substrate on which the information discriminating portion was formed was subjected to heat treatment simulating the production process of fan out type WLP and PLP, and the case where the glass substrate was not broken was defined as "○", and the case where the glass substrate was broken due to a crack generated from a spot was defined as "x" for evaluation.
As is clear from table 1, the maximum length of the cracks generated from the point in the surface direction in samples nos. 1 to 10 is small, and therefore, it is considered that breakage is unlikely to occur in the production process of the fan out type WLP and PLP. On the other hand, sample No.11 has a large maximum length of cracks from the point in the surface direction, and therefore, it is considered that breakage is likely to occur in the manufacturing process of fan out type WLP and PLP.
Description of the reference numerals
1. 10, 26 support glass substrates
1a peripheral edge part
2 surface of
2a, 2b dividing the region
3 information recognition unit
4 notch part
5 characters
6 points
7 annular groove
8 cracks
9. 27 laminated body
11. 24 processing substrate
12 peeling layer
13. 21, 25 adhesive layer
20 support member
22 semiconductor chip
23 sealing Material
28 wiring
29 solder bump
Claims (12)
1. A supporting glass substrate for supporting a processing substrate, wherein an information recognizing section having dots as a structural unit is provided on a surface of the supporting glass substrate, and a maximum length of a crack propagating from a dot in a surface direction is 350 [ mu ] m or less.
2. The support glass substrate according to claim 1, wherein the maximum length of the crack propagating from the point in the surface direction is 0.1 μm or more.
3. The support glass substrate according to claim 1 or 2, wherein the dots are formed by annular grooves.
4. The supporting glass substrate according to any one of claims 1 to 3, wherein the average linear thermal expansion coefficient in the temperature range of 30 ℃ to 380 ℃ is 30 x 10-7Over/° C and 165X 10-7Below/° c.
5. The supporting glass substrate according to any one of claims 1 to 4, which has a wafer shape or a substantially disk shape with a diameter of 100mm to 500mm, a plate thickness of less than 2.0mm, and a variation in the overall plate thickness of 5 μm or less.
6. The supporting glass substrate according to any one of claims 1 to 4, which has a quadrangular shape having sides of 300mm or more, a thickness of less than 2.0mm, and a variation in the overall thickness of 10 μm or less.
7. A laminated substrate comprising at least a processing substrate and a supporting glass substrate for supporting the processing substrate, wherein the supporting glass substrate is the supporting glass substrate according to any one of claims 1 to 6.
8. The laminate substrate according to claim 7, wherein the processing substrate includes at least a semiconductor chip molded with a sealing material.
9. A method for manufacturing a semiconductor package, comprising the steps of:
preparing a laminated substrate including at least a processing substrate and a support glass substrate for supporting the processing substrate; and
a step of processing the processing substrate,
the supporting glass substrate according to any one of claims 1 to 6.
10. The method of manufacturing a semiconductor package according to claim 9, wherein the processing treatment includes a step of wiring one surface of the processing substrate.
11. The method of manufacturing a semiconductor package according to claim 9, wherein the processing treatment includes a step of forming a solder bump on one surface of the processing substrate.
12. A glass substrate is characterized in that an information recognition portion with dots as structural units is provided on the surface, and the maximum length of a crack propagating from a dot in the surface direction is 350 [ mu ] m or less.
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| CN202311199194.8A CN117228966A (en) | 2017-08-31 | 2018-06-28 | Support glass substrate and laminated substrate using same |
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| JP2017166517 | 2017-08-31 | ||
| JP2017-166517 | 2017-08-31 | ||
| JP2018061106A JP7276644B2 (en) | 2017-08-31 | 2018-03-28 | SUPPORTING GLASS SUBSTRATE AND LAMINATED SUBSTRATE USING THE SAME |
| JP2018-061106 | 2018-03-28 | ||
| PCT/JP2018/024617 WO2019044148A1 (en) | 2017-08-31 | 2018-06-28 | Support glass substrate and laminated substrate using same |
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| CN202311199194.8A Division CN117228966A (en) | 2017-08-31 | 2018-06-28 | Support glass substrate and laminated substrate using same |
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|---|---|---|---|---|
| CN112234017A (en) * | 2020-10-19 | 2021-01-15 | 绍兴同芯成集成电路有限公司 | Double-sided processing technology for glass carrier plate and wafer |
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| JP7303081B2 (en) * | 2019-09-24 | 2023-07-04 | 日本碍子株式会社 | Temporary fixing substrate, composite substrate, and method for peeling electronic component |
| JP7342785B2 (en) * | 2020-05-14 | 2023-09-12 | 信越化学工業株式会社 | Substrate for transferring microstructures and manufacturing method thereof |
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| TW201913716A (en) | 2019-04-01 |
| CN111033687B (en) | 2023-10-24 |
| JP2019047106A (en) | 2019-03-22 |
| JP7276644B2 (en) | 2023-05-18 |
| TWI835738B (en) | 2024-03-21 |
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