JP6963219B2 - Support glass substrate and laminate using this - Google Patents

Description

The present invention relates to a support glass substrate and a laminate using the same, and more specifically, to a support glass substrate used to support a processed substrate in a semiconductor package manufacturing process and a laminate using the same.

Portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance) are required to be smaller and lighter. Along with this, the mounting space for semiconductor chips used in these electronic devices is also severely limited, and high-density mounting of semiconductor chips has become an issue. Therefore, in recent years, a three-dimensional mounting technology, that is, a high-density mounting of a semiconductor package has been achieved by laminating semiconductor chips and connecting each semiconductor chip with wiring.

Further, the conventional wafer level package (WLP) is manufactured by forming bumps in a wafer state and then individualizing them by dicing. However, the conventional WLP has a problem that it is difficult to increase the number of pins and the semiconductor chip is easily chipped because the back surface of the semiconductor chip is exposed.

Therefore, as a new WLP, a fan-out type WLP has been proposed. The fan-out type WLP can increase the number of pins, and by protecting the end portion of the semiconductor chip, it is possible to prevent the semiconductor chip from being chipped or the like.

The fan-out type WLP includes a step of molding a plurality of semiconductor chips with a resin encapsulant to form a processed substrate, and then wiring to one surface of the processed substrate, a step of forming solder bumps, and the like.

Since these steps involve a heat treatment at about 200 ° C., the sealing material may be deformed and the size of the processed substrate may change. When the dimensions of the processed substrate change, it becomes difficult to wire the processed substrate at a high density to one surface of the processed substrate, and it becomes difficult to accurately form solder bumps.

In order to suppress the dimensional change of the processed substrate, it is effective to use a support substrate for supporting the processed substrate. However, even when a support substrate is used, the dimensional change of the processed substrate may occur.

The present invention has been made in view of the above circumstances, and a technical problem thereof is high-density mounting of a semiconductor package by creating a support substrate which is unlikely to cause a dimensional change of a processed substrate and a laminate using the support substrate. Is to contribute to.

As a result of repeating various experiments, the present inventor has found that the above technical problems can be solved by adopting a glass substrate as a support substrate and strictly regulating the coefficient of thermal expansion of this glass substrate. It is proposed as the present invention. That is, the supporting glass substrate of the present invention is characterized in that the average linear thermal expansion coefficient in the temperature range of 20 to 200 ° ^{C. is more than 81 × 10-7} / ° C. and 110 × ^10-7 / ° C. or less. do. Here, the "average coefficient of linear thermal expansion in the temperature range of 20 to 200 ° C." can be measured with a dilatometer.

The glass substrate has a surface that is easy to smooth and has rigidity. Therefore, when a glass substrate is used as the support substrate, the processed substrate can be firmly and accurately supported. Further, the glass substrate easily transmits light such as ultraviolet light and infrared light. Therefore, when a glass substrate is used as the support substrate, the processed substrate and the support glass substrate can be easily fixed by providing an adhesive layer or the like with an ultraviolet curable adhesive or the like. Further, the processed substrate and the supporting glass substrate can be easily separated by providing a release layer or the like that absorbs infrared rays. As another method, the processed substrate and the supporting glass substrate can be easily separated by providing an adhesive layer or the like with an ultraviolet curable tape or the like.

Further, in the supporting glass substrate of the present invention, the average coefficient of linear thermal expansion in the temperature range of 20 to 200 ° ^{C. is more than 81 × 10-7} / ° C. and is ^{regulated to 110 × 10-7} / ° C. or less. By doing so, when the proportion of the semiconductor chip in the processed substrate is small and the proportion of the encapsulant is large, the coefficient of thermal expansion of the processed substrate and the supporting glass substrate can be easily matched. When the thermal expansion coefficients of both are matched, it becomes easy to suppress the dimensional change (particularly, warp deformation) of the processed substrate during the processing. As a result, wiring can be performed at a high density on one surface of the processed substrate, and solder bumps can be accurately formed.

Secondly, the supporting glass substrate of the present invention has an average coefficient of linear thermal expansion of ^{more than 85 × 10-7} / ° C. and 115 × ^10-7 / ° C. or less in the temperature range of 30 to 380 ° C. It is a feature. Here, the "average coefficient of linear thermal expansion in the temperature range of 30 to 380 ° C." can be measured with a dilatometer.

Thirdly, the supporting glass substrate of the present invention is preferably used for supporting a processed substrate in the manufacturing process of a semiconductor package.

Fourth, the supporting glass substrate of the present invention is preferably formed by an overflow down draw method.

Fifth, the supporting glass substrate of the present invention preferably has a Young's modulus of 65 GPa or more. Here, "Young's modulus" refers to a value measured by the bending resonance method. In addition, 1 GPa corresponds to ^{about 101.9 Kgf / mm 2.}

Sixth, the supporting glass substrate of the present invention has a glass composition of SiO ₂ 50 to 80%, Al ₂ O ₃ 1 to 20%, B ₂ O _{30 to} 20%, MgO 0 to 10% in terms of glass composition. , CaO 0~10%, SrO 0~7% , BaO 0~7%, ZnO 0~7%, Na 2 O 0~25%, preferably contains K 2 O 0~25%.

Seventh, the supporting glass substrate of the present invention has a glass composition of SiO ₂ 55 to 70%, Al ₂ O _{3 3 to} 18%, B ₂ O _{30 to} 8%, MgO 0 to 5% in terms of glass composition. , CaO 0~10%, SrO 0~5% , BaO 0~5%, 0~5% ZnO, Na 2 O 2~23%, preferably contains K 2 O 0~20%.

Eighth, the supporting glass substrate of the present invention preferably has a plate thickness of less than 2.0 mm, a plate thickness deviation of 30 μm or less, and a warp amount of 60 μm or less. Here, the "warp amount" refers to the sum of the absolute value of the maximum distance between the highest point and the least squares focal plane in the entire supporting glass substrate and the absolute value of the lowest point and the least squares focal plane. For example, it can be measured by the Bow / Warp measuring device SBW-331ML / d manufactured by Kobelco Research Institute.

Ninth, the laminate of the present invention is a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and the supporting glass substrate is the above-mentioned supporting glass substrate. And.

Tenth, the laminate of the present invention preferably includes a semiconductor chip in which the processed substrate is molded with at least a sealing material.

Eleventh, the method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, a step of transporting the laminate, and a processed substrate. On the other hand, it has a step of performing a processing process, and the support glass substrate is the above-mentioned support glass substrate. It should be noted that the "step of transporting the laminated body" and the "step of performing the processing process on the processed substrate" do not have to be performed separately and may be performed at the same time.

Twelve, it is preferable that the method for manufacturing a semiconductor package of the present invention includes a step of wiring the processing process on one surface of the processed substrate.

Thirteenth, it is preferable that the method for manufacturing a semiconductor package of the present invention includes a step in which the processing process forms solder bumps on one surface of the processed substrate.

Fourteenth, the method for manufacturing a semiconductor package of the present invention is characterized in that it is manufactured by the above-mentioned method for manufacturing a semiconductor package.

Fifteenth, the electronic device of the present invention is an electronic device including a semiconductor package, and the semiconductor package is the above-mentioned semiconductor package.

It is a conceptual perspective view which shows an example of the laminated body of this invention. It is a conceptual cross-sectional view which shows the manufacturing process of a fan-out type WLP.

In the supporting glass substrate of the present invention, the average coefficient of linear thermal expansion in the temperature range of 20 to 200 ° ^{C. is more than 81 × 10-7} / ° C. and 110 × ^10-7 / ° C. or less, preferably 82 × 10 ^-7 / ° C. or higher and 95 × 10 ^-7 / ° C. or lower, particularly 83 × 10 ^-7 / ° C. or higher and 91 × 10 ^-7 / ° C. or lower. If the average coefficient of linear thermal expansion in the temperature range of 20 to 200 ° C. is out of the above range, it becomes difficult for the coefficient of thermal expansion of the processed substrate and the supporting glass substrate to match. If the coefficients of thermal expansion of both are inconsistent, dimensional changes (particularly, warpage deformation) of the processed substrate are likely to occur during the processing.

The average coefficient of linear thermal expansion in the temperature range of 30 to 380 ° ^{C. is more than 85 × 10-7} / ° C. and 115 × ^10-7 / ° C. or less, preferably 86 × ^10-7 / ° C. or more. And 100 × 10 ^-7 / ° C or lower, particularly 87 × 10 ^-7 / ° C or higher, and 95 × 10 ^-7 / ° C or lower. If the average coefficient of linear thermal expansion in the temperature range of 30 to 380 ° C. is out of the above range, it becomes difficult for the coefficient of thermal expansion of the processed substrate and the supporting glass substrate to match. If the coefficients of thermal expansion of both are inconsistent, dimensional changes (particularly, warpage deformation) of the processed substrate are likely to occur during the processing.

The supporting glass substrate of the present invention has a glass composition of SiO ₂ 50 to 80%, Al ₂ O ₃ to 20%, B ₂ O _{30 to} 20%, MgO 0 to 10%, CaO 0 to 0% in terms of glass composition. It preferably contains 10%, SrO 0 to 7%, BaO 0 to 7%, ZnO 0 to 7%, Na ₂ O 0 to 25%, and K ₂ O 0 to 25%. The reasons for limiting the content of each component as described above are shown below. In addition, in the description of the content of each component,% notation represents mass% unless otherwise specified.

SiO ₂ is a main component forming the skeleton of glass. The content of SiO ₂ is preferably 50 to 80%, 55 to 75%, 58 to 70%, and particularly 60 to 68%. If _{the content of SiO 2} is too small, Young's modulus and acid resistance tend to decrease. On the other hand, if _{the content of SiO 2} is too large, the high-temperature viscosity tends to increase and the meltability tends to decrease, and devitrified crystals such as cristobalite tend to precipitate, so that the liquidus temperature tends to rise. Become.

Al ₂ O ₃ is a component that enhances Young's modulus and suppresses phase separation and devitrification. The content of Al ₂ O ₃ is preferably 1 to 20%, 3 to 18%, 4 to 16%, 5 to 13%, 6 to 12%, and particularly 7 to 10%. If _{the content of Al 2} O ₃ is too small, the Young's modulus tends to decrease, and the glass tends to undergo phase separation and devitrification. On the other hand, if _{the content of Al 2} O ₃ is too large, the high-temperature viscosity becomes high, and the meltability and moldability tend to decrease.

B ₂ O ₃ is a component that enhances meltability and devitrification resistance, and is a component that improves the susceptibility to scratches and enhances strength. The content of B ₂ O ₃ is preferably 0 to 20%, 1 to 12%, 2 to 10%, and particularly 3 to 8%. If _{the content of B 2} O ₃ is too small, the meltability and devitrification resistance tend to decrease, and the resistance to hydrofluoric acid-based chemicals tends to decrease. On the other hand, if _{the content of B 2} O ₃ is too large, Young's modulus and acid resistance tend to decrease.

From the viewpoint of increasing Young's modulus, Al ₂ O _3- B ₂ O ₃ is preferably more than 0%, 1% or more, 3% or more, 5% or more, 7% or more, and particularly preferably 9% or more. In addition, "Al ₂ O _3- B ₂ O ₃ " refers to a value obtained by subtracting the content of _{B 2} O ₃ from the content of _{Al 2} O _3.

MgO is a component that lowers high-temperature viscosity and enhances meltability, and is a component that remarkably increases Young's modulus among alkaline earth metal oxides. The content of MgO is preferably 0 to 10%, 0 to 8%, 0 to 5%, 0 to 3%, 0 to 2%, and particularly 0 to 1%. If the content of MgO is too large, the devitrification resistance tends to decrease.

CaO is a component that lowers high-temperature viscosity and remarkably enhances meltability. Further, among alkaline earth metal oxides, since the introduced raw material is relatively inexpensive, it is a component that reduces the raw material cost. The CaO content is preferably 0-10%, 0.5-8%, 1-6%, particularly 2-5%. If the CaO content is too high, the glass tends to be devitrified. If the CaO content is too small, it becomes difficult to enjoy the above effects.

SrO is a component that suppresses phase separation and is a component that enhances devitrification resistance. The content of SrO is preferably 0 to 7%, 0 to 5%, 0 to 3%, particularly less than 0 to 1%. If the content of SrO is too high, the glass tends to be devitrified.

BaO is a component that enhances devitrification resistance. The content of BaO is preferably 0 to 7%, 0 to 5%, 0 to 3%, and less than 0 to 1%. If the BaO content is too high, the glass tends to be devitrified.

The mass ratio CaO / (MgO + CaO + SrO + BaO) is preferably 0.5 or more, 0.6 or more, 0.7 or more, 0.8 or more, and particularly preferably 0.9 or more. If the mass ratio CaO / (MgO + CaO + SrO + BaO) is too small, the raw material cost tends to rise. In addition, "CaO / (MgO + CaO + SrO + BaO)" refers to a value obtained by dividing the content of CaO by the total amount of MgO, CaO, SrO and BaO.

ZnO is a component that lowers high-temperature viscosity and remarkably enhances meltability. The ZnO content is preferably 0 to 7%, 0.1 to 5%, and particularly 0.5 to 3%. If the ZnO content is too small, it becomes difficult to enjoy the above effects. If the ZnO content is too high, the glass tends to be devitrified.

Na ₂ O is an important component for optimizing the coefficient of thermal expansion, and is a component that lowers the high-temperature viscosity, significantly enhances the meltability, and contributes to the initial melting of the glass raw material. The content of Na ₂ O is preferably 0 to 25%, 5 to 25%, 8 to 24%, 11 to 23%, 13 to 21%, and particularly more than 15 to 19%. If _{the content of Na 2} O is too small, the meltability tends to decrease and the coefficient of thermal expansion may become unreasonably low. On the other hand, if _{the content of Na 2} O is too large, the coefficient of thermal expansion may become unreasonably high.

The mass ratio Al ₂ O ₃ / Na ₂ O is preferably 0.25 to 1.3, 0.25 to 1.0, 0.30 to 0.85, 0. from the viewpoint of optimizing the coefficient of thermal expansion. It is 35 to 0.65, especially 0.40 to 0.55.

K ₂ O is a component for adjusting the coefficient of thermal expansion, and is a component that lowers the high-temperature viscosity, enhances the meltability, and contributes to the initial melting of the glass raw material. The K ₂ O content is preferably 0% to 25%, the 0-20%, 0-15%, 0-10%, 6%, especially 0 to 1%. If _{the content of K 2} O is too large, the coefficient of thermal expansion may become unreasonably high.

The content of Na ₂ O + K ₂ O is preferably 12 to 35%, 15 to 25%, 16 to 23%, 17 to 22%, and particularly 18 to 21%. In this way, the average coefficient of linear thermal expansion in the temperature range of 20 to 200 ° C. can be easily regulated to ^{more than 81 × 10-7 to} 110 × ^{10-7 / ° C.} “Na ₂ O + K ₂ O” is the total amount of _{Na 2} O and K _{2 O.}

The mass ratio of Na ₂ O / (Na ₂ O + K ₂ O) is preferably more than 0.5, 0.6 or more, 0.7 or more, 0.8 or more, 0.9 or more when the improvement of meltability is emphasized. , Especially 0.95 or more, and when chemical durability is emphasized, preferably 0.65 or less, 0.6 or less, 0.55 or less, less than 0.5, 0.45 or less, especially 0.4 or less. Is. In addition, "Na ₂ O / (Na ₂ O + K ₂ O)" is a value obtained by dividing _{the content of Na 2} O by the total amount of Na ₂ O and K _{2 O.}

In addition to the above components, other components may be introduced as optional components. The content of the components other than the above components is preferably 10% or less, particularly 5% or less in total, from the viewpoint of accurately enjoying the effects of the present invention.

Fe ₂ O ₃ is a component that can be introduced as an impurity component or a clarifying agent component. However, if _{the content of Fe 2} O ₃ is too large, the ultraviolet transmittance may decrease. That is, if _{the content of Fe 2} O ₃ is too large, it becomes difficult to properly bond and detach the processed substrate and the supporting glass substrate via the adhesive layer and the release layer. Therefore, _{the content of Fe 2} O ₃ is preferably 0.05% or less, 0.03% or less, and particularly 0.02% or less. _{The "Fe 2} O ₃ " referred to in the present invention includes divalent iron oxide and trivalent iron oxide, and the divalent iron oxide is treated in terms of _{Fe 2} O _3. Other oxides shall be handled in the same manner based on the indicated oxides.

As a clarifying agent, As ₂ O ₃ and Sb ₂ O ₃ act effectively, but from an environmental point of view, it is preferable to reduce these components as much as possible. The content of As ₂ O ₃ is preferably 1% or less, 0.5% or less, particularly 0.1% or less, and it is desirable that the content is substantially not contained. Here, "substantially free of As ₂ O ₃ " refers to a case where the content _{of As 2} O ₃ in the glass composition is less than 0.05%. The content of Sb ₂ O ₃ is preferably 1% or less, 0.5% or less, particularly 0.1% or less, and it is desirable that the content is not substantially contained. Here, "substantially free of Sb ₂ O ₃ " refers to a case where the content _{of Sb 2} O ₃ in the glass composition is less than 0.05%.

SnO ₂ is a component having a good clarification effect in a high temperature range and a component that lowers high temperature viscosity. The SnO ₂ content is preferably 0 to 1%, 0.001 to 1%, 0.01 to 0.9%, and particularly 0.05 to 0.7%. If the content of _{SnO 2 is too large, devitrified crystals of SnO 2} are likely to precipitate. If _{the content of SnO 2} is too small, it becomes difficult to enjoy the above effect.

Further, as long as the glass properties are not impaired _{, a metal powder such as F, Cl, SO 3} , C, or Al, Si may be introduced as a clarifying agent up to about 3% each. Further, CeO _{2 and the} like can be introduced up to about 3%, but it is necessary to pay attention to the decrease in the ultraviolet transmittance.

Cl is a component that promotes melting of glass. If Cl is introduced into the glass composition, the melting temperature can be lowered and the clarification action can be promoted, and as a result, the melting cost can be reduced and the life of the glass manufacturing kiln can be easily extended. However, if the Cl content is too high, there is a risk of corroding the metal parts around the glass manufacturing kiln. Therefore, the Cl content is preferably 3% or less, 1% or less, 0.5% or less, and particularly 0.1% or less.

P ₂ O ₅ is a component that can suppress the precipitation of devitrified crystals. However, if a _{large amount of P 2} O ₅ is introduced, the glass becomes easy to separate. Therefore, _{the content of P 2} O ₅ is preferably 0 to 2.5%, 0 to 1.5%, 0 to 0.5%, and particularly 0 to 0.3%.

TiO ₂ is a component that lowers high-temperature viscosity and enhances meltability, and is also a component that suppresses solarization. However, _{when a large amount of TiO 2} is introduced, the glass is colored and the transmittance tends to decrease. Therefore, _{the content of TiO 2} is preferably 0 to 5%, 0 to 3%, 0 to 1%, and particularly 0 to 0.02%.

ZrO ₂ is a component that improves chemical resistance and Young's modulus. However, _{when a large amount of ZrO 2} is introduced, the glass is easily devitrified, and since the introduced raw material is poorly meltable, unmelted crystalline foreign matter may be mixed into the product substrate. Therefore, _{the content of ZrO 2} is preferably 0 to 5%, 0 to 3%, 0 to 1%, and particularly 0 to 0.5%.

Y ₂ O ₃ , Nb ₂ O ₅ , and La ₂ O ₃ have a function of increasing the strain point, Young's modulus, and the like. However, if the content of each of these components is more than 5%, particularly 1%, there is a risk that the raw material cost and the product cost will rise.

The supporting glass substrate of the present invention preferably has the following characteristics.

In the supporting glass substrate of the present invention, Young's modulus is preferably 65 GPa or more, 67 GPa or more, 68 GPa or more, 69 GPa or more, 70 GPa or more, 71 GPa or more, 72 GPa or more, particularly 73 GPa or more. If the Young's modulus is too low, it becomes difficult to maintain the rigidity of the laminated body, and the processed substrate is likely to be deformed, warped, or damaged.

The liquidus temperature is preferably less than 1150 ° C., 1120 ° C. or lower, 1100 ° C. or lower, 1080 ° C. or lower, 1050 ° C. or lower, 1010 ° C. or lower, 980 ° C. or lower, 960 ° C. or lower, 950 ° C. or lower, particularly 940 ° C. or lower. By doing so, it becomes easy to form the glass substrate by the down draw method, particularly the overflow down draw method, so that it becomes easy to produce a glass substrate having a small plate thickness, and the plate thickness deviation can be reduced without polishing the surface. It can be reduced. Alternatively, a small amount of polishing can reduce the overall plate thickness deviation to less than 2.0 μm, especially less than 1.0 μm. As a result, the manufacturing cost of the glass substrate can be reduced. Further, it becomes easy to prevent a situation in which devitrified crystals are generated during the manufacturing process of the glass substrate and the productivity of the glass substrate is lowered. Here, the "liquid phase temperature" is determined by passing the standard sieve 30 mesh (500 μm), putting the glass powder remaining in 50 mesh (300 μm) into a platinum boat, and then holding the glass powder in a temperature gradient furnace for 24 hours to crystallize. It can be calculated by measuring the temperature at which is deposited.

The viscosity at the liquidus temperature is preferably 10 ^4.6 dPa · s or higher, 10 ^5.0 dPa · s or higher, 10 ^5.2 dPa · s or higher, 10 ^5.4 dPa · s or higher, and 10 ^5.6 dPa. -S or more, especially 10 ^5.8 dPa · s or more. By doing so, it becomes easy to form the glass substrate by the down draw method, particularly the overflow down draw method, so that it becomes easy to produce a glass substrate having a small plate thickness, and the plate thickness deviation can be reduced without polishing the surface. Can be enhanced. Alternatively, a small amount of polishing can reduce the overall plate thickness deviation to less than 2.0 μm, especially less than 1.0 μm. As a result, the manufacturing cost of the glass substrate can be reduced. Further, it becomes easy to prevent a situation in which devitrified crystals are generated during the manufacturing process of the glass substrate and the productivity of the glass substrate is lowered. Here, the "viscosity at the liquid phase temperature" can be measured by the platinum ball pulling method. The viscosity at the liquidus temperature is an index of moldability, and the higher the viscosity at the liquidus temperature, the better the moldability.

The temperature at 10 ^2.5 dPa · s is preferably 1580 ° C. or lower, 1500 ° C. or lower, 1450 ° C. or lower, 1400 ° C. or lower, 1350 ° C. or lower, particularly 1200 to 1300 ° C. When the ^{temperature at 10 2.5} dPa · s becomes high, the meltability decreases and the manufacturing cost of the glass substrate rises. Here, the " ^{temperature at 10 2.5} dPa · s" can be measured by the platinum ball pulling method. The temperature at 10 ^2.5 dPa · s corresponds to the melting temperature, and the lower the temperature, the better the melting property.

The supporting glass substrate of the present invention is preferably formed by a down draw method, particularly an overflow down draw method. In the overflow down draw method, molten glass is overflowed from both sides of a heat-resistant gutter-shaped structure, and the overflowed molten glass is merged at the lower apex of the gutter-shaped structure and stretched downward to manufacture a glass substrate. How to do it. In the overflow down draw method, the surface of the glass substrate, which should be the surface, does not come into contact with the gutter-shaped refractory and is formed in a free surface state. Therefore, it becomes easy to manufacture a glass substrate having a small plate thickness, and the plate thickness deviation can be reduced without polishing the surface. Alternatively, a small amount of polishing can reduce the overall plate thickness deviation to less than 2.0 μm, especially less than 1.0 μm. As a result, the manufacturing cost of the glass substrate can be reduced.

As a method for forming a glass substrate, for example, a slot down method, a redraw method, a float method, or the like can be adopted in addition to the overflow down draw method.

The glass substrate of the present invention preferably has a substantially disk shape or a wafer shape, and its diameter is preferably 100 mm or more and 500 mm or less, and particularly preferably 150 mm or more and 450 mm or less. In this way, it becomes easy to apply to the manufacturing process of the semiconductor package. If necessary, it may be processed into another shape, for example, a shape such as a rectangle.

In the glass substrate of the present invention, the roundness is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, and particularly preferably 0.03 mm or less. The smaller the roundness, the easier it is to apply to the manufacturing process of semiconductor packages. The definition of roundness is a value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer.

In the supporting glass substrate of the present invention, the plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, and particularly 0.9 mm or less. As the plate thickness becomes thinner, the mass of the laminated body becomes lighter, so that the handleability is improved. On the other hand, if the plate thickness is too thin, the strength of the support glass substrate itself decreases, and it becomes difficult to fulfill the function as the support substrate. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, and particularly 0.7 mm or more.

In the supporting glass substrate of the present invention, the plate thickness deviation is preferably 30 μm or less, 20 μm or less, 10 μm or less, 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, and particularly less than 0.1 to 1 μm. The arithmetic average roughness Ra is preferably 100 nm or less, 50 nm or less, 20 nm or less, 10 nm or less, 5 nm or less, 2 nm or less, 1 nm or less, and particularly 0.5 nm or less. The higher the surface accuracy, the easier it is to improve the processing accuracy. In particular, since the wiring accuracy can be improved, high-density wiring becomes possible. Further, the strength of the support glass substrate is improved, and the support glass substrate and the laminate are less likely to be damaged. Furthermore, the number of times the support glass substrate can be reused can be increased. The "arithmetic mean roughness Ra" can be measured by a stylus type surface roughness meter or an atomic force microscope (AFM).

The support glass substrate of the present invention is preferably formed by the overflow down draw method and then the surface is polished. By doing so, it becomes easy to regulate the plate thickness deviation to 2 μm or less, 1 μm or less, particularly less than 1 μm.

In the supporting glass substrate of the present invention, the amount of warpage is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 to 45 μm, and particularly 5 to 40 μm. The smaller the amount of warpage, the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be improved, high-density wiring becomes possible.

In the supporting glass substrate of the present invention, the ultraviolet transmittance in the plate thickness direction at a wavelength of 300 nm is preferably 40% or more, 50% or more, 60% or more, 70% or more, and particularly 80% or more. If the ultraviolet transmittance is too low, it becomes difficult to bond the processed substrate and the support substrate by the adhesive layer due to the irradiation with ultraviolet light. Further, when an adhesive layer or the like is provided with an ultraviolet curable tape or the like, it becomes difficult to easily separate the processed substrate and the supporting glass substrate. The "ultraviolet transmittance in the plate thickness direction at a wavelength of 300 nm" can be evaluated by measuring the spectral transmittance at a wavelength of 300 nm using, for example, a double beam spectrophotometer.

The supporting glass substrate of the present invention is preferably not subjected to ion exchange treatment, and preferably does not have a compressive stress layer on its surface. When the ion exchange treatment is performed, the manufacturing cost of the supporting glass substrate rises. Further, when the ion exchange treatment is performed, it becomes difficult to reduce the deviation in the overall thickness of the supporting glass substrate. The supporting glass substrate of the present invention does not exclude the aspect of forming a compressive stress layer on the surface by performing an ion exchange treatment. From the viewpoint of increasing the mechanical strength, it is preferable to perform an ion exchange treatment to form a compressive stress layer on the surface.

The laminate of the present invention is a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and the supporting glass substrate is the above-mentioned supporting glass substrate. Here, the technical features (preferable configuration, effect) of the laminate of the present invention overlap with the technical features of the supporting glass substrate of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted. Since the processed substrate and the supporting glass substrate are easily fixed, an ultraviolet curable tape can also be used as an adhesive layer.

The laminate of the present invention preferably has an adhesive layer between the processed substrate and the supporting glass substrate. The adhesive layer is preferably a resin, and for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like is preferable. Further, those having heat resistance to withstand heat treatment in the manufacturing process of the semiconductor package are preferable. As a result, the adhesive layer is less likely to melt in the manufacturing process of the semiconductor package, and the accuracy of the processing process can be improved.

The laminate of the present invention preferably further has a release layer between the processed substrate and the supporting glass substrate, more specifically between the processed substrate and the adhesive layer. By doing so, it becomes easy to peel off the processed substrate from the supporting glass substrate after performing a predetermined processing treatment on the processed substrate. From the viewpoint of productivity, the processed substrate is preferably peeled off by irradiation light such as laser light. As the laser light source, an infrared light laser light source such as a YAG laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 to 1300 nm) can be used. Further, as the release layer, a resin that decomposes by irradiating an infrared laser can be used. In addition, a substance that efficiently absorbs infrared rays and converts them into heat can be added to the resin. For example, carbon black, graphite powder, fine particle metal powder, dye, pigment and the like can be added to the resin.

The peeling layer is composed of a material in which "intra-layer peeling" or "interfacial peeling" occurs due to irradiation light such as laser light. That is, when irradiated with light of a certain intensity, the intermolecular or intermolecular bonding force in the atom or molecule disappears or decreases, ablation or the like occurs, and the material is composed of a material that causes peeling. In addition, there are cases where the components contained in the peeling layer are released as a gas and lead to separation by irradiation with irradiation light, and cases where the peeling layer absorbs light and becomes a gas and the vapor is released and leads to separation. There is.

In the laminate of the present invention, the supporting glass substrate is preferably larger than the processed substrate. As a result, when the processed substrate and the supporting glass substrate are supported, even if the center positions of the two are slightly separated from each other, the edge portion of the processed substrate is less likely to protrude from the supporting glass substrate.

The method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, a step of transporting the laminate, and processing of the processed substrate. It is characterized by having a step of performing a process and the support glass substrate being the above-mentioned support glass substrate. Here, the technical features (suitable configuration, effect) of the method for manufacturing a semiconductor package of the present invention overlap with the technical features of the supporting glass substrate and the laminate of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

In the method for manufacturing a semiconductor package of the present invention, the processing is preferably a process of wiring on one surface of the processed substrate or a process of forming solder bumps on one surface of the processed substrate. In the method for manufacturing a semiconductor package of the present invention, the dimensions of the processed substrate are unlikely to change during these processes, so that these steps can be performed appropriately.

In addition to the above, as the processing, one surface of the processed substrate (usually the surface opposite to the supporting glass substrate) is mechanically polished, and one surface of the processed substrate (usually, what is the supporting glass substrate)? It may be either a process of dry etching the surface on the opposite side or a process of wet etching one surface of the processed substrate (usually the surface on the opposite side of the supporting glass substrate). In the method for manufacturing a semiconductor package of the present invention, the processed substrate is less likely to warp and the rigidity of the laminated body can be maintained. As a result, the above processing can be performed properly.

The semiconductor package of the present invention is characterized in that it is manufactured by the above-mentioned method for manufacturing a semiconductor package. Here, the technical features (suitable configuration, effect) of the semiconductor package of the present invention overlap with the technical features of the method for manufacturing the supporting glass substrate, the laminate, and the semiconductor package of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

The electronic device of the present invention is an electronic device including a semiconductor package, and the semiconductor package is the above-mentioned semiconductor package. Here, the technical features (suitable configuration, effect) of the electronic device of the present invention overlap with the supporting glass substrate, laminate, manufacturing method of the semiconductor package, and technical features of the semiconductor package of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

The present invention will be further described with reference to the drawings.

FIG. 1 is a conceptual perspective view showing an example of the laminated body 1 of the present invention. In FIG. 1, the laminate 1 includes a support glass substrate 10 and a processed substrate 11. The support glass substrate 10 is attached to the processed substrate 11 in order to prevent the dimensional change of the processed substrate 11. A release layer 12 and an adhesive layer 13 are arranged between the support glass substrate 10 and the processed substrate 11. The release layer 12 is in contact with the support glass substrate 10, and the adhesive layer 13 is in contact with the processed substrate 11.

As can be seen from FIG. 1, the laminate 1 is arranged in the order of the support glass substrate 10, the release layer 12, the adhesive layer 13, and the processed substrate 11. The shape of the support glass substrate 10 is determined according to the processed substrate 11, but in FIG. 1, the shapes of the support glass substrate 10 and the processed substrate 11 are both substantially disk shapes. For the release layer 12, for example, a resin that decomposes by irradiating a laser can be used. In addition, a substance that efficiently absorbs laser light and converts it into heat can be added to the resin. For example, carbon black, graphite powder, fine particle metal powder, dye, pigment and the like can be added to the resin. The release layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like. The adhesive layer 13 is made of a resin, and is formed by coating, for example, by various printing methods, an inkjet method, a spin coating method, a roll coating method, or the like. UV curable tape can also be used. The adhesive layer 13 is dissolved and removed by a solvent or the like after the support glass substrate 10 is peeled from the processed substrate 11 by the peeling layer 12. The ultraviolet curable tape can be removed by a peeling tape after being irradiated with ultraviolet rays.

FIG. 2 is a conceptual cross-sectional view showing a manufacturing process of a fan-out type WLP. FIG. 2A shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. If necessary, a release layer may be formed between the support member 20 and the adhesive layer 21. Next, as shown in FIG. 2B, a plurality of semiconductor chips 22 are attached onto the adhesive layer 21. At that time, the active side surface of the semiconductor chip 22 is brought into contact with the adhesive layer 21. Next, as shown in FIG. 2C, the semiconductor chip 22 is molded with the resin encapsulant 23. As the sealing material 23, a material having little dimensional change after compression molding and dimensional change when molding wiring is used. Subsequently, as shown in FIGS. 2 (d) and 2 (e), the processed substrate 24 on which the semiconductor chip 22 is molded is separated from the support member 20, and then bonded and fixed to the support glass substrate 26 via the adhesive layer 25. Let me. At that time, of the surfaces of the processed substrate 24, the surface opposite to the surface on the side where the semiconductor chip 22 is embedded is arranged on the support glass substrate 26 side. In this way, the laminated body 27 can be obtained. If necessary, a release layer may be formed between the adhesive layer 25 and the support glass substrate 26. Further, after the obtained laminate 27 is conveyed, as shown in FIG. 2 (f), after forming the wiring 28 on the surface of the processed substrate 24 on the side where the semiconductor chip 22 is embedded, a plurality of solder bumps 29 are formed. To form. Finally, after separating the processed substrate 24 from the supporting glass substrate 26, the processed substrate 24 is cut for each semiconductor chip 22 and subjected to a subsequent packaging step (FIG. 2 (g)).

Hereinafter, the present invention will be described based on examples. The following examples are merely examples. The present invention is not limited to the following examples.

Tables 1 and 2 show examples (Sample Nos. 1 to 34) of the present invention.

First, a glass batch prepared with a glass raw material was placed in a platinum crucible so as to have the glass composition shown in the table, and melted at 1550 ° C. for 4 hours. When melting the glass batch, stirring was performed using a platinum stirrer to homogenize the glass batch. Next, the molten glass was poured onto a carbon plate, formed into a plate shape, and then slowly cooled from a temperature about 20 ° C. higher than the slow cooling point to room temperature at 3 ° C./min. For each sample obtained, the average linear thermal expansion coefficient alpha _{20 to 200} in the temperature range of 20 to 200 ° C., an average linear thermal expansion coefficient alpha _{30 to 380} in the temperature range of 30 to 380 ° C., the density [rho, strain point Ps, Slow cooling point Ta, softening point Ts, high temperature viscosity 10 ^4.0 dPa · s temperature, high temperature viscosity 10 ^3.0 dPa · s temperature, high temperature viscosity 10 ^2.5 dPa · s temperature, high temperature viscosity 10 ^{2. The temperature at 0} dPa · s, the liquidus temperature TL, the viscosity η at the liquidus temperature TL, the Young ratio E, and the ultraviolet transmittance T at a wavelength of 300 nm were evaluated.

Average linear thermal expansion coefficient alpha _{20 to 200} in the temperature range of 20 to 200 ° C., the average linear thermal expansion coefficient alpha _{30 to 380} in the temperature range of 30 to 380 ° C., a value measured by the dilatometer.

The density ρ is a value measured by the well-known Archimedes method.

The strain point Ps, the slow cooling point Ta, and the softening point Ts are values measured based on the method of ASTM C336.

The temperature at a high temperature viscosity of 10 ^4.0 dPa · s, 10 ^3.0 dPa · s, and 10 ^2.5 dPa · s is a value measured by the platinum ball pulling method.

The liquidus temperature TL is the temperature at which crystals precipitate after passing through a standard sieve of 30 mesh (500 μm) and placing the glass powder remaining in 50 mesh (300 μm) in a platinum boat and holding it in a temperature gradient furnace for 24 hours. It is a value measured by microscopic observation. The viscosity η at the liquidus temperature is a value obtained by measuring the viscosity of glass at the liquidus temperature TL by the platinum ball pulling method.

Young's modulus E refers to a value measured by the resonance method.

As is clear from Tables 1 and 2, the sample No. 1-34, the average linear thermal expansion coefficient alpha _{30 to 200} is 81.5 × ^{10 -7} /℃~107.8×10 ^-7 / ℃ in the temperature range of 20 to 200 ° C., a temperature range of 30 to 380 ° C. average linear thermal expansion coefficient alpha _{30 to 380} in was ^{85.4 × 10 -7 /℃~114.0×10 -7 / ℃} . Therefore, the sample No. 1 to 34 are considered to be suitable as a supporting glass substrate used for supporting a processed substrate in the manufacturing process of a semiconductor manufacturing apparatus.

Each sample of [Example 2] was prepared as follows. First, the sample Nos. After blending the glass raw materials so as to have a glass composition of 1 to 34, the glass raw material is supplied to a glass melting furnace and melted at 1500 to 1600 ° C., and then the molten glass is supplied to an overflow down draw forming apparatus, and the plate thickness is 0. Each was molded to be 0.7 mm. The obtained glass substrate (overall plate thickness deviation of about 4.0 μm) was processed to a thickness of φ300 mm × 0.7 mm, and then both surfaces thereof were polished by a polishing device. Specifically, both surfaces of the glass substrate were sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass substrate were polished while rotating the glass substrate and the pair of polishing pads together. During the polishing process, it was occasionally controlled so that a part of the glass substrate protruded from the polishing pad. The polishing pad was made of urethane, the average particle size of the polishing slurry used in the polishing treatment was 2.5 μm, and the polishing rate was 15 m / min. For each of the obtained polished glass substrates, the total plate thickness deviation and the amount of warpage were measured by the Bow / Warp measuring device SBW-331ML / d manufactured by Kobelco Kaken Co., Ltd. As a result, the total plate thickness deviation was less than 1.0 μm, and the warpage amount was 35 μm or less.

1, 27 Laminates 10, 26 Support glass substrates 11, 24 Processed substrates 12 Release layers 13, 21, 25 Adhesive layers 20 Support members 22 Semiconductor chips 23 Encapsulants 28 Wiring 29 Solder bumps

Claims (9)

The average coefficient of linear thermal expansion in the temperature range of 20 to 200 ° ^{C. is more than 81 × 10-7} / ° C. and 110 × ^10-7 / ° C. or less, and the glass composition is SiO ₂ 50 to 80 in mass%. %, Al ₂ O ₃ 1 to 20%, B ₂ O _{30 to} 20%, MgO 0 to 10%, CaO 0 to 10%, SrO 0 to 7%, BaO 0 to 7%, ZnO 0 to 7%, It _{contains Na 2} O 0 to 25%, K ₂ O 0 to 25%, and Na ₂ O + K ₂ O 12 to 35%, and has a mass ratio of Al ₂ O ₃ / Na ₂ O of 0.30 to 0.85. A support glass substrate characterized in that a semiconductor chip is used to support a processed substrate molded with resin. The average coefficient of linear thermal expansion in the temperature range of 30 to 380 ° ^{C. is more than 85 × 10-7} / ° C. and 115 × ^10-7 / ° C. or less, and the glass composition is SiO ₂ 50 to 80 in mass%. %, Al ₂ O ₃ 1 to 20%, B ₂ O _{30 to} 20%, MgO 0 to 10%, CaO 0 to 10%, SrO 0 to 7%, BaO 0 to 7%, ZnO 0 to 7%, It _{contains Na 2} O 0 to 25%, K ₂ O 0 to 25%, and Na ₂ O + K ₂ O 12 to 35%, and has a mass ratio of Al ₂ O ₃ / Na ₂ O of 0.30 to 0.85. A support glass substrate characterized in that a semiconductor chip is used to support a processed substrate molded with resin. The support glass substrate according to claim 1 or 2, wherein the Young's modulus is 65 GPa or more. As the glass composition, in _{terms of mass%, SiO 2} 55 to 70%, Al ₂ O _{3 3 to} 18%, B ₂ O _{30 to} 8%, MgO 0 to 5%, CaO 0 to 10%, SrO 0 to 5%. _{, BaO 0~5%, 0~5% ZnO} , Na 2 O 2~23%, supporting glass substrate according to any one of claims 1 to 3, characterized in that it contains K 2 O 0 to 20% .. The support glass substrate according to any one of claims 1 to 4 , wherein the plate thickness is less than 2.0 mm, the plate thickness deviation is 30 μm or less, and the warp amount is 60 μm or less. A laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, wherein the supporting glass substrate is the supporting glass substrate according to any one of claims 1 to 5 , and the processed substrate is at least sealed. A laminate characterized by including a semiconductor chip molded with a stop material. A process of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and
The process of transporting the laminate and
It has a process of performing processing on a processed substrate, and also has a process.
A method for manufacturing a semiconductor package, wherein the support glass substrate is the support glass substrate according to any one of claims 1 to 5 , and the processed substrate includes at least a semiconductor chip molded with a sealing material. The method for manufacturing a semiconductor package according to claim 7 , wherein the processing process includes a step of wiring on one surface of the processed substrate. Processing method for forming a semiconductor package according to claim 7 or 8, characterized in that it comprises a step of forming a solder bump on one surface of the processed substrate.

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